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IRG8P50N120KD-EPBF IRG8P50N120KD-EPBF Infineon Technologies IRG8P50N120KD%28-E%29PbF.pdf Description: IGBT 1200V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 35ns/190ns
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 315 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 350 W
Produkt ist nicht verfügbar
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CY14B256LA-SZ25XIT CY14B256LA-SZ25XIT Infineon Technologies Infineon-CY14B256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd9bf63054 Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR9024N AUIRFR9024N Infineon Technologies AUIRF%28R%2CU%299024N.pdf Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY62158EV30LL-45ZSXIT CY62158EV30LL-45ZSXIT Infineon Technologies Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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CY62158EV30LL-45ZSXIT CY62158EV30LL-45ZSXIT Infineon Technologies Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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10+12.30 EUR
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50+11.64 EUR
100+11.36 EUR
250+10.99 EUR
500+10.93 EUR
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SAK-XC2785X-72F80L AA SAK-XC2785X-72F80L AA Infineon Technologies XC2785x.pdf Description: IC MCU 16/32B 576KB FLSH 144LQFP
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AUIRGB4062D1 AUIRGB4062D1 Infineon Technologies AUIRGB%2CS%2CSL4062D1.pdf Description: IGBT TRENCH 600V 59A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/90ns
Switching Energy: 532µJ (on), 311µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 246 W
Produkt ist nicht verfügbar
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MOTIXMOTORBENCHTOBO1 MOTIXMOTORBENCHTOBO1 Infineon Technologies Infineon-MOTIX_MOTOR_BENCH_Users_Manual_100-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184525b05880314 Description: BLDC MOTOR BENCH EVAL
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: DB42S03
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s), Cable(s)
Secondary Attributes: 24V Supply
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S29AL008J70TFN010 S29AL008J70TFN010 Infineon Technologies Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 8MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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10+4.35 EUR
25+4.22 EUR
40+4.16 EUR
96+4.03 EUR
288+3.88 EUR
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CYW4343W1KUBGT Infineon Technologies Infineon-CYW4334WKUBGT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f02f680f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLUETOOTH 74UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 74-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 74-WLBGA (4.87x2.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CY7C1069AV33-10BAC CY7C1069AV33-10BAC Infineon Technologies CY7C1069AV33.pdf Description: IC SRAM 16MBIT PARALLEL 60FBGA
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IPP139N08N3 G IPP139N08N3 G Infineon Technologies IP%28P%2CI%2CB%29136N08N3_G.pdf Description: MOSFET N-CH 80V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
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CY8C22213-24PI CY8C22213-24PI Infineon Technologies CY8C22113%2C%2022213.pdf Description: IC MCU 8BIT 2KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY8C24423-24PI CY8C24423-24PI Infineon Technologies CY8C24123,223,423.pdf Description: IC MCU 8BIT 4KB FLASH 28DIP
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CY8C24223-24PI CY8C24223-24PI Infineon Technologies CY8C24123,223,423.pdf Description: IC MCU 8BIT 4KB FLASH 20DIP
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CY8C22113-24PI CY8C22113-24PI Infineon Technologies CY8C22113,%2022213.pdf Description: IC MCU 8BIT 2KB FLASH 8DIP
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CY8C24123-24PI CY8C24123-24PI Infineon Technologies CY8C24123%2C223%2C423.pdf Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
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CY8C26233-24PI CY8C26233-24PI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 8KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY8C25122-24PI CY8C25122-24PI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
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CY8C26443-24PI CY8C26443-24PI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 16KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
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IPB013N06NF2SATMA1 IPB013N06NF2SATMA1 Infineon Technologies Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
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IPB013N06NF2SATMA1 IPB013N06NF2SATMA1 Infineon Technologies Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
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10+4.77 EUR
100+3.58 EUR
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CY2308ZXI-1H CY2308ZXI-1H Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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TZ400N20KOFHPSA1 TZ400N20KOFHPSA1 Infineon Technologies TZ400N.pdf Description: SCR MODULE 2KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 670 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2 kV
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TLE5555ICMEE6XTMA1 TLE5555ICMEE6XTMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTVA127002EVV1R0XTMA1 Infineon Technologies INFN-S-A0003370683-1.pdf?t.download=true&u=ovmfp3 Description: RF MOSFET LDMOS 50V H-36275-4
Packaging: Bulk
Package / Case: H-36275-4
Current Rating (Amps): 10µA
Frequency: 1.2GHz ~ 1.4GHz
Power - Output: 700W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: H-36275-4
Part Status: Active
Voltage - Rated: 105 V
Voltage - Test: 50 V
Current - Test: 300 mA
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1+1164.96 EUR
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CY8C9520A-24PVXI CY8C9520A-24PVXI Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 28SSOP
Packaging: Tube
Features: EEPROM, POR, PWM, WDT
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 20
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 10mA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
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2+9.73 EUR
10+7.45 EUR
47+6.57 EUR
141+6.14 EUR
282+5.93 EUR
517+5.78 EUR
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S25HL512TDPNHI013 S25HL512TDPNHI013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IPP60R040S7XKSA1 IPP60R040S7XKSA1 Infineon Technologies Infineon-IPP60R040S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7e7124d1017f06f46b39204f Description: HIGH POWER_NEW PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
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IPP60R065S7XKSA1 IPP60R065S7XKSA1 Infineon Technologies Infineon-IPP60R065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7e7124d1017f0716f5d329d7 Description: HIGH POWER_NEW PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
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XMC7100D-F176K4160AA XMC7100D-F176K4160AA Infineon Technologies Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415 Description: IC MCU 32BT 4.063MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 176-TEQFP (24x24)
Part Status: Active
Number of I/O: 148
DigiKey Programmable: Not Verified
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ACCESSORY33235NOSA1 Infineon Technologies Description: ACCESSORY IGBT MODULEE
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IPB016N08NF2SATMA1 IPB016N08NF2SATMA1 Infineon Technologies Infineon-IPB016N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4a92f971afa Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
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IPB016N08NF2SATMA1 IPB016N08NF2SATMA1 Infineon Technologies Infineon-IPB016N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4a92f971afa Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
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BAT1902ELE6327XTMA1 Infineon Technologies Description: BAT19 - RF DIODE
Packaging: Bulk
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ICL8820SXUMA1 ICL8820SXUMA1 Infineon Technologies Description: IC LED DRVR LIGHTING MIXED SIGN
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 130°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8-82
Dimming: No
Voltage - Supply (Min): 8.1V
Voltage - Supply (Max): 23V
Part Status: Active
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S25HL512TDPBHM013 S25HL512TDPBHM013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29JL064J55TFI003 S29JL064J55TFI003 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29JL064J55TFI003 S29JL064J55TFI003 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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CY7C63813-SXC CY7C63813-SXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 18-SOIC
DigiKey Programmable: Not Verified
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IR3846AMTRPBFAUMA1 IR3846AMTRPBFAUMA1 Infineon Technologies Infineon-IR3846AMTRPBF-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7d718a49017da1ed0d381ec8&ack=t Description: IC REG BUCK ADJ 40A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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CYW89373BUBGT Infineon Technologies Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF312KPMC1-G-JNE2 CY9AF312KPMC1-G-JNE2 Infineon Technologies Infineon-CY9A310K_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edef47d63e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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IGLR60R260D1XUMA1 IGLR60R260D1XUMA1 Infineon Technologies Infineon-IGLR60R260D1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c850f4bee01853485a00b3516 Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 690µA
Supplier Device Package: PG-TSON-8-7
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V
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BTS730XUMA1 BTS730XUMA1 Infineon Technologies Infineon-BTS730-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa39112ba0fec Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.9V ~ 16.9V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BTS730XUMA1 BTS730XUMA1 Infineon Technologies Infineon-BTS730-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa39112ba0fec Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.9V ~ 16.9V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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IPA028N08N3G IPA028N08N3G Infineon Technologies INFN-S-A0002296985-1.pdf?t.download=true&u=5oefqw Description: IPA028N08 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
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CYALKIT-E02 CYALKIT-E02 Infineon Technologies Infineon-CYALKIT-E02_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd9c9b1407&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: KIT SOLAR POWER BLE BEACON RDK
Packaging: Bulk
For Use With/Related Products: CYBLE-022001-00, S6AE103A
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: CYBLE-022001-00, S6AE103A
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KPY53-AK Infineon Technologies INFNS03039-1.pdf?t.download=true&u=5oefqw Description: SENSOR 23.21PSIA 0.2" .07V TO8-5
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 70 mV
Operating Pressure: 23.21PSI (160kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 145.04PSI (1000kPa)
Part Status: Active
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KPY55-AK Infineon Technologies INFNS03039-1.pdf?t.download=true&u=5oefqw Description: SENSOR 145.04PSIA 0.2" .13V TO8
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 130 mV
Operating Pressure: 145.04PSI (1000kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 435.11PSI (3000kPa)
Part Status: Active
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FF2MR12W3M1HB11BPSA1 FF2MR12W3M1HB11BPSA1 Infineon Technologies Infineon-FF2MR12W3M1H_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd0180f12586e85406 Description: MOSFET 4N-CH 1200V AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-EASY3B
Part Status: Active
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FD16001200R17KF6CB2NOSA1 Infineon Technologies INFNS19252-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
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T2871N80TS12XOSA1 Infineon Technologies Description: SCR MODULE
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D850N40TXPSA1 D850N40TXPSA1 Infineon Technologies Infineon-D850N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a18c6d04782 Description: DIODE GEN PURP 4KV 850A
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IPTG018N08NM5ATMA1 IPTG018N08NM5ATMA1 Infineon Technologies Infineon-IPTG018N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bd925115f Description: TRENCH 40<-<100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
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IRF7769L2TRPBF IRF7769L2TRPBF Infineon Technologies IRF7769L2PbF.pdf Description: MOSFET N-CH 100V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7769L2TRPBF IRF7769L2TRPBF Infineon Technologies IRF7769L2PbF.pdf Description: MOSFET N-CH 100V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Produkt ist nicht verfügbar
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IPDQ60R022S7XTMA1 IPDQ60R022S7XTMA1 Infineon Technologies Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518 Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
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2+16.61 EUR
10+12.97 EUR
25+12.06 EUR
100+11.06 EUR
250+10.58 EUR
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TLE6361G TLE6361G Infineon Technologies Description: IC REG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IM323S6G2XKMA1 Infineon Technologies IM323-S6G_IM323-S6G2_Ver2.0_12-1-22.pdf Description: CIPOS TINY
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IRG8P50N120KD-EPBF IRG8P50N120KD%28-E%29PbF.pdf
IRG8P50N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 35ns/190ns
Switching Energy: 2.3mJ (on), 1.9mJ (off)
Test Condition: 600V, 35A, 5Ohm, 15V
Gate Charge: 315 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 350 W
Produkt ist nicht verfügbar
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CY14B256LA-SZ25XIT Infineon-CY14B256LA_256-Kbit_(32_K_8)_nvSRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd9bf63054
CY14B256LA-SZ25XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR9024N AUIRF%28R%2CU%299024N.pdf
AUIRFR9024N
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY62158EV30LL-45ZSXIT Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62158EV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
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Anzahl Preis
1000+8.93 EUR
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CY62158EV30LL-45ZSXIT Infineon-CY62158EV30_MOBL_8_MBIT_(1024K_X_8)_STATIC_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebecb9632aa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62158EV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2463 Stücke:
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Anzahl Preis
2+13.24 EUR
10+12.30 EUR
25+11.93 EUR
50+11.64 EUR
100+11.36 EUR
250+10.99 EUR
500+10.93 EUR
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SAK-XC2785X-72F80L AA XC2785x.pdf
SAK-XC2785X-72F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Produkt ist nicht verfügbar
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AUIRGB4062D1 AUIRGB%2CS%2CSL4062D1.pdf
AUIRGB4062D1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 59A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/90ns
Switching Energy: 532µJ (on), 311µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 246 W
Produkt ist nicht verfügbar
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MOTIXMOTORBENCHTOBO1 Infineon-MOTIX_MOTOR_BENCH_Users_Manual_100-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184525b05880314
MOTIXMOTORBENCHTOBO1
Hersteller: Infineon Technologies
Description: BLDC MOTOR BENCH EVAL
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: DB42S03
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s), Cable(s)
Secondary Attributes: 24V Supply
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S29AL008J70TFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFN010
Hersteller: Infineon Technologies
Description: IC FLASH 8MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 362 Stücke:
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Anzahl Preis
4+4.66 EUR
10+4.35 EUR
25+4.22 EUR
40+4.16 EUR
96+4.03 EUR
288+3.88 EUR
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CYW4343W1KUBGT Infineon-CYW4334WKUBGT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f02f680f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 74UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 74-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 74-WLBGA (4.87x2.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4297 Stücke:
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Anzahl Preis
108+8.15 EUR
Mindestbestellmenge: 108
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CY7C1069AV33-10BAC CY7C1069AV33.pdf
CY7C1069AV33-10BAC
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 60FBGA
auf Bestellung 15 Stücke:
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Anzahl Preis
15+42.49 EUR
Mindestbestellmenge: 15
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IPP139N08N3 G IP%28P%2CI%2CB%29136N08N3_G.pdf
IPP139N08N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Produkt ist nicht verfügbar
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CY8C22213-24PI CY8C22113%2C%2022213.pdf
CY8C22213-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 2KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C24423-24PI CY8C24123,223,423.pdf
CY8C24423-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28DIP
Produkt ist nicht verfügbar
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CY8C24223-24PI CY8C24123,223,423.pdf
CY8C24223-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 20DIP
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CY8C22113-24PI CY8C22113,%2022213.pdf
CY8C22113-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 2KB FLASH 8DIP
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CY8C24123-24PI CY8C24123%2C223%2C423.pdf
CY8C24123-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C26233-24PI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26233-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-DIP
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C25122-24PI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C25122-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C26443-24PI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26443-24PI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB013N06NF2SATMA1 Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24
IPB013N06NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
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IPB013N06NF2SATMA1 Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24
IPB013N06NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+4.77 EUR
100+3.58 EUR
Mindestbestellmenge: 3
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CY2308ZXI-1H Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308ZXI-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 116 Stücke:
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Anzahl Preis
1+24.75 EUR
10+19.70 EUR
96+18.12 EUR
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TZ400N20KOFHPSA1 TZ400N.pdf
TZ400N20KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 670 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
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TLE5555ICMEE6XTMA1
TLE5555ICMEE6XTMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTVA127002EVV1R0XTMA1 INFN-S-A0003370683-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 50V H-36275-4
Packaging: Bulk
Package / Case: H-36275-4
Current Rating (Amps): 10µA
Frequency: 1.2GHz ~ 1.4GHz
Power - Output: 700W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: H-36275-4
Part Status: Active
Voltage - Rated: 105 V
Voltage - Test: 50 V
Current - Test: 300 mA
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1164.96 EUR
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CY8C9520A-24PVXI Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9520A-24PVXI
Hersteller: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 28SSOP
Packaging: Tube
Features: EEPROM, POR, PWM, WDT
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 20
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 10mA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.73 EUR
10+7.45 EUR
47+6.57 EUR
141+6.14 EUR
282+5.93 EUR
517+5.78 EUR
Mindestbestellmenge: 2
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S25HL512TDPNHI013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL512TDPNHI013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP60R040S7XKSA1 Infineon-IPP60R040S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7e7124d1017f06f46b39204f
IPP60R040S7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.77 EUR
50+6.33 EUR
100+5.80 EUR
Mindestbestellmenge: 2
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IPP60R065S7XKSA1 Infineon-IPP60R065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7e7124d1017f0716f5d329d7
IPP60R065S7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
50+4.17 EUR
100+3.90 EUR
500+3.19 EUR
Mindestbestellmenge: 3
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XMC7100D-F176K4160AA Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415
XMC7100D-F176K4160AA
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 176-TEQFP (24x24)
Part Status: Active
Number of I/O: 148
DigiKey Programmable: Not Verified
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.72 EUR
10+22.13 EUR
40+20.14 EUR
120+19.25 EUR
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ACCESSORY33235NOSA1
Hersteller: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
Produkt ist nicht verfügbar
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IPB016N08NF2SATMA1 Infineon-IPB016N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4a92f971afa
IPB016N08NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Produkt ist nicht verfügbar
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IPB016N08NF2SATMA1 Infineon-IPB016N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4a92f971afa
IPB016N08NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.11 EUR
10+5.15 EUR
100+3.87 EUR
Mindestbestellmenge: 3
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BAT1902ELE6327XTMA1
Hersteller: Infineon Technologies
Description: BAT19 - RF DIODE
Packaging: Bulk
auf Bestellung 255000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1366+0.34 EUR
Mindestbestellmenge: 1366
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ICL8820SXUMA1
ICL8820SXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIGHTING MIXED SIGN
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 130°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8-82
Dimming: No
Voltage - Supply (Min): 8.1V
Voltage - Supply (Max): 23V
Part Status: Active
Produkt ist nicht verfügbar
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S25HL512TDPBHM013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL512TDPBHM013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29JL064J55TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+10.16 EUR
Mindestbestellmenge: 1000
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S29JL064J55TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J55TFI003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.17 EUR
10+13.04 EUR
25+12.77 EUR
50+12.73 EUR
100+11.42 EUR
250+11.08 EUR
500+10.53 EUR
Mindestbestellmenge: 2
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CY7C63813-SXC download
CY7C63813-SXC
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 18-SOIC
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR3846AMTRPBFAUMA1 Infineon-IR3846AMTRPBF-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7d718a49017da1ed0d381ec8&ack=t
IR3846AMTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 40A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar
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CYW89373BUBGT
Hersteller: Infineon Technologies
Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF312KPMC1-G-JNE2 Infineon-CY9A310K_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edef47d63e4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF312KPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.06 EUR
10+10.10 EUR
25+9.36 EUR
Mindestbestellmenge: 2
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IGLR60R260D1XUMA1 Infineon-IGLR60R260D1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c850f4bee01853485a00b3516
IGLR60R260D1XUMA1
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 690µA
Supplier Device Package: PG-TSON-8-7
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V
Produkt ist nicht verfügbar
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BTS730XUMA1 Infineon-BTS730-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa39112ba0fec
BTS730XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.9V ~ 16.9V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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BTS730XUMA1 Infineon-BTS730-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa39112ba0fec
BTS730XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.9V ~ 16.9V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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IPA028N08N3G INFN-S-A0002296985-1.pdf?t.download=true&u=5oefqw
IPA028N08N3G
Hersteller: Infineon Technologies
Description: IPA028N08 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
74+7.23 EUR
Mindestbestellmenge: 74
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CYALKIT-E02 Infineon-CYALKIT-E02_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd9c9b1407&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYALKIT-E02
Hersteller: Infineon Technologies
Description: KIT SOLAR POWER BLE BEACON RDK
Packaging: Bulk
For Use With/Related Products: CYBLE-022001-00, S6AE103A
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Produkt ist nicht verfügbar
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KPY53-AK INFNS03039-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SENSOR 23.21PSIA 0.2" .07V TO8-5
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 70 mV
Operating Pressure: 23.21PSI (160kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 145.04PSI (1000kPa)
Part Status: Active
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+46.04 EUR
Mindestbestellmenge: 11
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KPY55-AK INFNS03039-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SENSOR 145.04PSIA 0.2" .13V TO8
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 130 mV
Operating Pressure: 145.04PSI (1000kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 435.11PSI (3000kPa)
Part Status: Active
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+48.77 EUR
Mindestbestellmenge: 11
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FF2MR12W3M1HB11BPSA1 Infineon-FF2MR12W3M1H_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c80027ecd0180f12586e85406
FF2MR12W3M1HB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-EASY3B
Part Status: Active
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+914.60 EUR
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FD16001200R17KF6CB2NOSA1 INFNS19252-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2715.26 EUR
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T2871N80TS12XOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE
Produkt ist nicht verfügbar
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D850N40TXPSA1 Infineon-D850N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a18c6d04782
D850N40TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 850A
Produkt ist nicht verfügbar
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IPTG018N08NM5ATMA1 Infineon-IPTG018N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bd925115f
IPTG018N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
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IRF7769L2TRPBF IRF7769L2PbF.pdf
IRF7769L2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
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IRF7769L2TRPBF IRF7769L2PbF.pdf
IRF7769L2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Produkt ist nicht verfügbar
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IPDQ60R022S7XTMA1 Infineon-IPDQ60R022S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017f06a8ffdb1518
IPDQ60R022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
auf Bestellung 733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.61 EUR
10+12.97 EUR
25+12.06 EUR
100+11.06 EUR
250+10.58 EUR
Mindestbestellmenge: 2
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TLE6361G
TLE6361G
Hersteller: Infineon Technologies
Description: IC REG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IM323S6G2XKMA1 IM323-S6G_IM323-S6G2_Ver2.0_12-1-22.pdf
Hersteller: Infineon Technologies
Description: CIPOS TINY
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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