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CYW20730A2KFBGT CYW20730A2KFBGT Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLE 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2400 Stücke:
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3+7.85 EUR
10+6.79 EUR
25+6.43 EUR
100+5.91 EUR
250+5.6 EUR
500+5.39 EUR
1000+5.19 EUR
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KP229L2920XTMA1 KP229L2920XTMA1 Infineon Technologies KP229L2920_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6be7d500b63 Description: SENSOR 37.71PSIA 4.7V
Features: Amplified Output, Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.3 V ~ 4.7 V
Operating Pressure: 8.7PSI ~ 37.71PSI (60kPa ~ 260kPa)
Pressure Type: Absolute
Accuracy: ±1.015PSI (±7kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1500+4.45 EUR
3000+4.32 EUR
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IRL2910STRRPBF IRL2910STRRPBF Infineon Technologies irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d Description: MOSFET N-CH 100V 55A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Not For New Designs
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFP450H6433XTMA1 BFP450H6433XTMA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 24GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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CYBLE-212020-EVAL CYBLE-212020-EVAL Infineon Technologies download Description: MODULE KIT
Utilized IC / Part: CYBLE-212020-01
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-212020-01
Packaging: Bulk
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CYBLE-202007-EVAL CYBLE-202007-EVAL Infineon Technologies Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: EZ-BLE PROC EVALUATION BOARD
Utilized IC / Part: CYBLE-202007-01
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-202007-01
Packaging: Bulk
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CYBLE-222014-EVAL CYBLE-222014-EVAL Infineon Technologies download Description: EVAL BOARD FOR CYBLE-222014
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-222014-01
Packaging: Box
Produkt ist nicht verfügbar
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CYBLE-222014-EVAL CYBLE-222014-EVAL Infineon Technologies download Description: EVAL BOARD FOR CYBLE-222014
Packaging: Box
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-222014-01
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CYBLE-224116-EVAL CYBLE-224116-EVAL Infineon Technologies Infineon-CYBLE-224116-EVAL_EZ-BLE_PSoC_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efeebf81599&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: MODULE KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-224116-01
Packaging: Bulk
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CYBLE-214015-EVAL CYBLE-214015-EVAL Infineon Technologies download Description: MODULE KIT
Utilized IC / Part: CYBLE-214015-01
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-214015-01
Packaging: Bulk
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CYBLE-212006-EVAL CYBLE-212006-EVAL Infineon Technologies Infineon-CYBLE-212006-EVAL_EZ-BLE_PRoC_Evaluation_Board_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efeef6e15a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: EZ-BLE PROC EVALUATION BOARD
Packaging: Bulk
For Use With/Related Products: CYBLE-212006-01
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: CYBLE-212006-01
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IRLR7833PBF IRLR7833PBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Produkt ist nicht verfügbar
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IKW40N65F5FKSA1 IKW40N65F5FKSA1 Infineon Technologies DS_IKP_IKW40N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa60c5395f31 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
auf Bestellung 614 Stücke:
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3+8.69 EUR
30+4.83 EUR
120+3.97 EUR
510+3.34 EUR
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 Infineon Technologies Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 Infineon Technologies Infineon-IKW40N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef20150144a968a5823 Description: IGBT TRENCH 650V 79A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
auf Bestellung 152 Stücke:
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2+11.3 EUR
30+6.33 EUR
120+5.24 EUR
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IKP40N65H5XKSA1 IKP40N65H5XKSA1 Infineon Technologies DS_IKP_IKW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa8ba6fb6078 Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Produkt ist nicht verfügbar
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AIKW40N65DF5XKSA1 AIKW40N65DF5XKSA1 Infineon Technologies Infineon-AIKW40N65DF5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d081302ca7f30 Description: IGBT TRENCH 650V 74A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 350µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 19ns/165ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AIKW40N65DH5XKSA1 AIKW40N65DH5XKSA1 Infineon Technologies Infineon-AIKW40N65DH5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d08130bbf7f32 Description: IGBT TRENCH 650V 74A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 350µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 19ns/165ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFU4615PBF IRFU4615PBF Infineon Technologies irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4 description Description: MOSFET N-CH 150V 33A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 6390 Stücke:
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5+5.09 EUR
75+2.34 EUR
150+2.12 EUR
525+1.8 EUR
1050+1.65 EUR
2025+1.55 EUR
5025+1.52 EUR
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SBCSHIELDTLE9471TOBO1 SBCSHIELDTLE9471TOBO1 Infineon Technologies Infineon-Lite_SBC_Shield-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a2f7ee8aa76de Description: EVAL DCDC SBC SHIELD TLE9471-3ES
Packaging: Bulk
Function: CANbus
Type: Interface
Contents: Board(s)
Utilized IC / Part: MCP2515, TLE9471-3ES
Platform: Arduino
Part Status: Active
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FS100R17N3E4BOSA1 FS100R17N3E4BOSA1 Infineon Technologies Infineon-FS100R17N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043397219b60139768e85c55284 Description: IGBT MOD 1700V 100A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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F475R06W1E3BOMA1 F475R06W1E3BOMA1 Infineon Technologies Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Description: IGBT MOD 600V 100A 275W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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IKW25T120FKSA1 IKW25T120FKSA1 Infineon Technologies IKW25T120_Rev2G_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42899373e31 Description: IGBT NPT FS 1200V 50A TO247-3
Power - Max: 190 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Not For New Designs
Gate Charge: 155 nC
Test Condition: 600V, 25A, 22Ohm, 15V
Switching Energy: 4.2mJ
Td (on/off) @ 25°C: 50ns/560ns
IGBT Type: NPT, Trench Field Stop
Supplier Device Package: PG-TO247-3-1
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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BC850CWH6327XTSA1 BC850CWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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IRS21844MTRPBF IRS21844MTRPBF Infineon Technologies irs21844mpbf.pdf?fileId=5546d462533600a401535676dfb027de Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRS21814MTRPBF IRS21814MTRPBF Infineon Technologies irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tape & Reel (TR)
Number of Drivers: 2
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AUIRS21814STR AUIRS21814STR Infineon Technologies IRSDS19254-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
DigiKey Programmable: Not Verified
Gate Type: IGBT, MOSFET (N-Channel)
Produkt ist nicht verfügbar
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IRS21851SPBF IRS21851SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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SPP24N60C3XKSA1 SPP24N60C3XKSA1 Infineon Technologies SPP24N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e323b4975 Description: MOSFET N-CH 650V 24.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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CYBT-353027-EVAL CYBT-353027-EVAL Infineon Technologies download Description: MODULE KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-353027-02
Packaging: Bulk
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CYBT-213043-EVAL CYBT-213043-EVAL Infineon Technologies download Description: EVAL BLE BR/EDR CYBT-213043-02
Part Status: Active
Supplied Contents: Board(s), Cable(s)
Type: Transceiver; Bluetooth® 5.x
Frequency: 2.4GHz
For Use With/Related Products: CYBT-213043-02, CYW20819
Packaging: Bulk
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CY9BF314RPMC-G-JNE2 CY9BF314RPMC-G-JNE2 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 120LQFP
Number of I/O: 103
Part Status: Active
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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CY9BF464KQN-G-AVE2 CY9BF464KQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 288KB FLASH 48QFN
Data Converters: A/D 8x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 33
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
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CY9BF514NPQC-G-JNE2 CY9BF514NPQC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF512NPMC-G-JNE2 CY9BF512NPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF514NPMC-G-JNE2 CY9BF514NPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF512RPMC-G-JNE2 CY9BF512RPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB4410ZPBF IRFB4410ZPBF Infineon Technologies irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a description Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
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500+1.7 EUR
1000+1.57 EUR
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S29GL01GS11DHV023 S29GL01GS11DHV023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL512S10TFI020 S29GL512S10TFI020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Packaging: Tray
Memory Organization: 32M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
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IPB240N03S4LR8ATMA1 IPB240N03S4LR8ATMA1 Infineon Technologies Infineon-IPB240N03S4L-R8-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3697fda0476 Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Produkt ist nicht verfügbar
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IKP20N65H5XKSA1 IKP20N65H5XKSA1 Infineon Technologies Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4 Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
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IKB20N65EH5ATMA1 Infineon Technologies Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
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IRF1324PBF IRF1324PBF Infineon Technologies irf1324pbf.pdf?fileId=5546d462533600a4015355dac93318a7 Description: MOSFET N-CH 24V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BTS247ZE3062AATMA2 BTS247ZE3062AATMA2 Infineon Technologies Infineon-BTS247Z+E3062A-DS-v01_04-EN.pdf?fileId=5546d46249cd10140149f61898a21f1e&ack=t Description: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
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KITA2GTC3775VTFTTOBO1 KITA2GTC3775VTFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC377 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Board Type: Evaluation Platform
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TFT
Part Status: Active
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TC377TP96F300SAALXUMA1 TC377TP96F300SAALXUMA1 Infineon Technologies infineon-sak-tc37x-datasheet-en.pdf Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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CYBLE-222005-00 CYBLE-222005-00 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-222005-00 CYBLE-222005-00 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL-S25HL512T EVAL-S25HL512T Infineon Technologies Infineon-SEMPER-S25HL512T-memory-module-Quick-start-guide-GettingStarted-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017e71d9d5630088 Description: SEMPER S25HL512T MEMORY MODULE E
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S25HL512T
Platform: Pmod™
Part Status: Active
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IGU04N60TAKMA1 IGU04N60TAKMA1 Infineon Technologies Infineon-IGU04N60T-DS-v02_00-en.pdf?fileId=db3a304341e0aed00141e47349ff51f4 Description: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
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10+2.24 EUR
75+0.96 EUR
150+0.86 EUR
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S70GL02GP11FFIR22 S70GL02GP11FFIR22 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Access Time: 110 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 64-FBGA (11x13)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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S70GL02GP11FAIR12 S70GL02GP11FAIR12 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 8, 128M x 16
Access Time: 110 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 64-FBGA (11x13)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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S70GL02GP11FAIR13 S70GL02GP11FAIR13 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 8, 128M x 16
Access Time: 110 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 64-FBGA (11x13)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Produkt ist nicht verfügbar
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TD104N14K0FHPSA1 Infineon Technologies INFN-S-A0004146847-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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T930S16TFBVT Infineon Technologies INFNS14669-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
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T930S16TFB Infineon Technologies INFNS14669-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PVG612APBF PVG612APBF Infineon Technologies pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2 A
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
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2+16.45 EUR
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250+12.46 EUR
500+12.03 EUR
1000+11.63 EUR
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IDH20G65C5XKSA2 IDH20G65C5XKSA2 Infineon Technologies IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6 Description: DIODE SIL CARB 650V 20A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
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100+7.89 EUR
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CYW20730A2KFBGT CYW20730_RevJ_4-25-17.pdf
CYW20730A2KFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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3+7.85 EUR
10+6.79 EUR
25+6.43 EUR
100+5.91 EUR
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500+5.39 EUR
1000+5.19 EUR
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KP229L2920XTMA1 KP229L2920_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6be7d500b63
KP229L2920XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 37.71PSIA 4.7V
Features: Amplified Output, Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.3 V ~ 4.7 V
Operating Pressure: 8.7PSI ~ 37.71PSI (60kPa ~ 260kPa)
Pressure Type: Absolute
Accuracy: ±1.015PSI (±7kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1500+4.45 EUR
3000+4.32 EUR
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IRL2910STRRPBF irl2910spbf.pdf?fileId=5546d462533600a40153565b9922250d
IRL2910STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 55A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Not For New Designs
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFP450H6433XTMA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP450H6433XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 24GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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CYBLE-212020-EVAL download
CYBLE-212020-EVAL
Hersteller: Infineon Technologies
Description: MODULE KIT
Utilized IC / Part: CYBLE-212020-01
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-212020-01
Packaging: Bulk
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1+45.42 EUR
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CYBLE-202007-EVAL Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CYBLE-202007-EVAL
Hersteller: Infineon Technologies
Description: EZ-BLE PROC EVALUATION BOARD
Utilized IC / Part: CYBLE-202007-01
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-202007-01
Packaging: Bulk
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1+41.23 EUR
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CYBLE-222014-EVAL download
CYBLE-222014-EVAL
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYBLE-222014
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-222014-01
Packaging: Box
Produkt ist nicht verfügbar
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CYBLE-222014-EVAL download
CYBLE-222014-EVAL
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYBLE-222014
Packaging: Box
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-222014-01
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2+16.28 EUR
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CYBLE-224116-EVAL Infineon-CYBLE-224116-EVAL_EZ-BLE_PSoC_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efeebf81599&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-224116-EVAL
Hersteller: Infineon Technologies
Description: MODULE KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-224116-01
Packaging: Bulk
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CYBLE-214015-EVAL download
CYBLE-214015-EVAL
Hersteller: Infineon Technologies
Description: MODULE KIT
Utilized IC / Part: CYBLE-214015-01
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBLE-214015-01
Packaging: Bulk
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CYBLE-212006-EVAL Infineon-CYBLE-212006-EVAL_EZ-BLE_PRoC_Evaluation_Board_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efeef6e15a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
CYBLE-212006-EVAL
Hersteller: Infineon Technologies
Description: EZ-BLE PROC EVALUATION BOARD
Packaging: Bulk
For Use With/Related Products: CYBLE-212006-01
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: CYBLE-212006-01
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1+37.48 EUR
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IRLR7833PBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLR7833PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Produkt ist nicht verfügbar
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IKW40N65F5FKSA1 DS_IKP_IKW40N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa60c5395f31
IKW40N65F5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
auf Bestellung 614 Stücke:
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3+8.69 EUR
30+4.83 EUR
120+3.97 EUR
510+3.34 EUR
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AIGW40N65H5XKSA1 Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c
AIGW40N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 Infineon-IKW40N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef20150144a968a5823
IKW40N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 79A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
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2+11.3 EUR
30+6.33 EUR
120+5.24 EUR
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IKP40N65H5XKSA1 DS_IKP_IKW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa8ba6fb6078
IKP40N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Produkt ist nicht verfügbar
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AIKW40N65DF5XKSA1 Infineon-AIKW40N65DF5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d081302ca7f30
AIKW40N65DF5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 350µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 19ns/165ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AIKW40N65DH5XKSA1 Infineon-AIKW40N65DH5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d08130bbf7f32
AIKW40N65DH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 350µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 19ns/165ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFU4615PBF description irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4
IRFU4615PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 6390 Stücke:
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AnzahlPrivatkunde
5+5.09 EUR
75+2.34 EUR
150+2.12 EUR
525+1.8 EUR
1050+1.65 EUR
2025+1.55 EUR
5025+1.52 EUR
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SBCSHIELDTLE9471TOBO1 Infineon-Lite_SBC_Shield-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a2f7ee8aa76de
SBCSHIELDTLE9471TOBO1
Hersteller: Infineon Technologies
Description: EVAL DCDC SBC SHIELD TLE9471-3ES
Packaging: Bulk
Function: CANbus
Type: Interface
Contents: Board(s)
Utilized IC / Part: MCP2515, TLE9471-3ES
Platform: Arduino
Part Status: Active
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AnzahlPrivatkunde
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FS100R17N3E4BOSA1 Infineon-FS100R17N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043397219b60139768e85c55284
FS100R17N3E4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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AnzahlPrivatkunde
1+190.92 EUR
10+159.51 EUR
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F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
F475R06W1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 100A 275W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
auf Bestellung 170 Stücke:
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1+77.52 EUR
24+52.36 EUR
120+45.49 EUR
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IKW25T120FKSA1 IKW25T120_Rev2G_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42899373e31
IKW25T120FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT FS 1200V 50A TO247-3
Power - Max: 190 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Not For New Designs
Gate Charge: 155 nC
Test Condition: 600V, 25A, 22Ohm, 15V
Switching Energy: 4.2mJ
Td (on/off) @ 25°C: 50ns/560ns
IGBT Type: NPT, Trench Field Stop
Supplier Device Package: PG-TO247-3-1
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC850CWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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IRS21844MTRPBF irs21844mpbf.pdf?fileId=5546d462533600a401535676dfb027de
IRS21844MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21814MTRPBF irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6
IRS21814MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 16-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Packaging: Tape & Reel (TR)
Number of Drivers: 2
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+2.5 EUR
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AUIRS21814STR IRSDS19254-1.pdf?t.download=true&u=5oefqw
AUIRS21814STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
DigiKey Programmable: Not Verified
Gate Type: IGBT, MOSFET (N-Channel)
Produkt ist nicht verfügbar
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IRS21851SPBF fundamentals-of-power-semiconductors
IRS21851SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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SPP24N60C3XKSA1 SPP24N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e323b4975
SPP24N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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AnzahlPrivatkunde
3+10.14 EUR
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CYBT-353027-EVAL download
CYBT-353027-EVAL
Hersteller: Infineon Technologies
Description: MODULE KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-353027-02
Packaging: Bulk
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
1+98.06 EUR
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CYBT-213043-EVAL download
CYBT-213043-EVAL
Hersteller: Infineon Technologies
Description: EVAL BLE BR/EDR CYBT-213043-02
Part Status: Active
Supplied Contents: Board(s), Cable(s)
Type: Transceiver; Bluetooth® 5.x
Frequency: 2.4GHz
For Use With/Related Products: CYBT-213043-02, CYW20819
Packaging: Bulk
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+95.9 EUR
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CY9BF314RPMC-G-JNE2 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF314RPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Number of I/O: 103
Part Status: Active
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.04 EUR
10+14.95 EUR
25+13.92 EUR
84+13.36 EUR
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CY9BF464KQN-G-AVE2 download
CY9BF464KQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48QFN
Data Converters: A/D 8x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 33
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Produkt ist nicht verfügbar
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CY9BF514NPQC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF514NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF512NPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF512NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF514NPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF514NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF512RPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF512RPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB4410ZPBF description irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
IRFB4410ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
auf Bestellung 1480 Stücke:
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AnzahlPrivatkunde
5+4.84 EUR
10+3.11 EUR
100+2.12 EUR
500+1.7 EUR
1000+1.57 EUR
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S29GL01GS11DHV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHV023
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512S10TFI020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL512S10TFI020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Packaging: Tray
Memory Organization: 32M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
auf Bestellung 364 Stücke:
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1+26.16 EUR
10+24.28 EUR
25+23.53 EUR
91+22.48 EUR
182+21.92 EUR
273+21.6 EUR
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IPB240N03S4LR8ATMA1 Infineon-IPB240N03S4L-R8-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3697fda0476
IPB240N03S4LR8ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Produkt ist nicht verfügbar
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IKP20N65H5XKSA1 Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4
IKP20N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
auf Bestellung 381 Stücke:
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4+6.22 EUR
50+3.11 EUR
100+2.81 EUR
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IKB20N65EH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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IRF1324PBF irf1324pbf.pdf?fileId=5546d462533600a4015355dac93318a7
IRF1324PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 918 Stücke:
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4+6.03 EUR
50+3.03 EUR
100+2.74 EUR
500+2.24 EUR
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BTS247ZE3062AATMA2 Infineon-BTS247Z+E3062A-DS-v01_04-EN.pdf?fileId=5546d46249cd10140149f61898a21f1e&ack=t
BTS247ZE3062AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Produkt ist nicht verfügbar
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KITA2GTC3775VTFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3775VTFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC377 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Board Type: Evaluation Platform
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TFT
Part Status: Active
auf Bestellung 26 Stücke:
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1+537.24 EUR
10+536.01 EUR
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TC377TP96F300SAALXUMA1 infineon-sak-tc37x-datasheet-en.pdf
TC377TP96F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 888 Stücke:
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AnzahlPrivatkunde
1+68.32 EUR
10+55.53 EUR
25+52.34 EUR
100+49.98 EUR
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CYBLE-222005-00 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-00
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBLE-222005-00 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-00
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL-S25HL512T Infineon-SEMPER-S25HL512T-memory-module-Quick-start-guide-GettingStarted-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017e71d9d5630088
EVAL-S25HL512T
Hersteller: Infineon Technologies
Description: SEMPER S25HL512T MEMORY MODULE E
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S25HL512T
Platform: Pmod™
Part Status: Active
auf Bestellung 10 Stücke:
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1+53.98 EUR
10+50.77 EUR
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IGU04N60TAKMA1 Infineon-IGU04N60T-DS-v02_00-en.pdf?fileId=db3a304341e0aed00141e47349ff51f4
IGU04N60TAKMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
auf Bestellung 480 Stücke:
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10+2.24 EUR
75+0.96 EUR
150+0.86 EUR
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S70GL02GP11FFIR22 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FFIR22
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Access Time: 110 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 64-FBGA (11x13)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 8, 128M x 16
Produkt ist nicht verfügbar
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S70GL02GP11FAIR12 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR12
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 8, 128M x 16
Access Time: 110 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 64-FBGA (11x13)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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S70GL02GP11FAIR13 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR13
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Memory Organization: 256M x 8, 128M x 16
Access Time: 110 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 64-FBGA (11x13)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Gbit
Produkt ist nicht verfügbar
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TD104N14K0FHPSA1 INFN-S-A0004146847-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
auf Bestellung 5 Stücke:
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3+214.78 EUR
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T930S16TFBVT INFNS14669-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
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2+470.16 EUR
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T930S16TFB INFNS14669-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
PVG612APBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2 A
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 1147 Stücke:
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2+16.45 EUR
10+14.66 EUR
25+13.99 EUR
50+13.52 EUR
100+13.05 EUR
250+12.46 EUR
500+12.03 EUR
1000+11.63 EUR
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IDH20G65C5XKSA2 IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6
IDH20G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
auf Bestellung 413 Stücke:
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2+15.84 EUR
50+8.59 EUR
100+7.89 EUR
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