Produkte > MSC
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|
| MSCSICSP6/REF3 | Microchip Technology | UNRLS, SIC BOARD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSICSP6/REF3 | Microchip / Microsemi | Power Management IC Development Tools UNRLS, SIC BOARD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM027CD3AG | Microchip Technology | Description: SIC 2N-CH 1200V 733A D3 Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: D3 Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM027CD3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM027CT6AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM027CT6AG | Microchip Technology | Description: SIC 2N-CH 1200V 733A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM027D3AG | Microchip Technology | Description: PM-MOSFET-SIC-D3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM027T6AG | Microchip Technology | Description: PM-MOSFET-SIC-SP6C Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 27mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 2.97kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM027T6AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM02CT6LIAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM02CT6LIAG | Microchip Technology | Very Low Stray Inductance Phase Leg SiC MOSFET Power Module | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM02CT6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1200V 947A SP6C LI Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Supplier Device Package: SP6C LI Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM02CT6LIAG | Microchip Technology | Very Low Stray Inductance Phase Leg SiC MOSFET Power Module | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM02T6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1200V 947A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM02T6LIAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6L1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM03CT6LIAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM03CT6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1200V 805A SP6C LI Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.215kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Supplier Device Package: SP6C LI Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM03T6LIAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6L1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM03T6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1200V 805A Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 3.215kW (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM042CD3AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 495A D3 Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2031W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: D3 Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM042CD3AG | Microchip Technology | UNRLS CC7147 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM042CD3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM042CT6AG | Microchip Technology | Description: SIC 2N-CH 1200V 495A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM042CT6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1200V 495A SP6C LI Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2031W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C LI Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM042CT6LIAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM042D3AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 495A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2031W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM042D3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-D3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM042T6AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 495A Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 2031W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM042T6LIAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6L1 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM042T6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1200V 495A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 2031W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM08CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM08CT3AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 337A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1409W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM08CT3AG | Microchip Technology / Atmel | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 2 Stücke: Lieferzeit 311-315 Tag (e) |
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| MSCSM120AM08T3AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 337A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1409W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM08T3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM11CT3AG | Microchip Technology | Description: SIC 2N-CH 1200V 254A SP3F Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1.067kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM11CT3AG | Microchip / Microsemi | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM11T3AG | Microchip Technology | Description: PM-MOSFET-SIC-SP3F Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1.067kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM11T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM16CT1AG | Microchip Technology | Description: SIC 2N-CH 1200V 173A SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM16CT1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM16T1AG | Microchip Technology | Description: SIC 2N-CH 1200V 173A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM16T1AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM31CT1AG | Microchip Technology | Description: SIC 2N-CH 1200V 89A SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP1F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM31CT1AG | Microchip Technology / Atmel | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | auf Bestellung 7 Stücke: Lieferzeit 311-315 Tag (e) |
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| MSCSM120AM31CT1AG | Microchip Technology | Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| MSCSM120AM31CT1AG | Microchip Technology | Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| MSCSM120AM31CT1AG | Microchip Technology | Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM31CT1AG Produktcode: 191184
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| Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||
| MSCSM120AM31CTBL1NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM31T1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM31T1AG | Microchip Technology | Description: SIC 2N-CH 1200V 89A Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM31TBL1NG | Microchip Technology | Description: SIC 2N-CH 1200V 79A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 310W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM50CT1AG | Microchip Technology | Description: SIC 2N-CH 1200V 55A SP1F Packaging: Tube Part Status: Active Supplier Device Package: SP1F Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 245W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120AM50CT1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DAM11CT3AG | Microchip Technology | Description: PM-MOSFET-SIC-SBD~-SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 1 Phase Voltage - Isolation: 4000Vrms Current: 254 A Voltage: 1.2 kV | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DAM11CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DAM31CTBL1NG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-BL1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Power Dissipation (Max): 310W Vgs(th) (Max) @ Id: 2.8V @ 1mA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DAM31CTBL1NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1 | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DDUM16CTBL3NG | Microchip Technology | Description: SIC 4N-CH 1200V 150A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 150A Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 560W Technology: Silicon Carbide (SiC) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 4 N-Channel, Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DDUM16CTBL3NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL3 | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DDUM16TBL3NG | Microchip Technology | Description: SIC 4N-CH 1200V 150A Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 150A Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 560W Technology: Silicon Carbide (SiC) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 4 N-Channel, Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DDUM16TBL3NG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-BL3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DDUM31CTBL2NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2 | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DDUM31TBL2NG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-BL2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DDUM31TBL2NG | Microchip Technology | Description: SIC 4N-CH 1200V 79A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 79A Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 310W Technology: Silicon Carbide (SiC) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 4 N-Channel, Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DHM31CTBL2NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2 | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DUM027AG | Microchip Technology | Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2968W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DUM042AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 495A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 2031W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DUM08T3AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 337A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1409W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DUM08T3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP3F | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DUM11T3AG | Microchip Technology | Description: PM-MOSFET-SIC-SP3F Part Status: Active Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1067W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Package / Case: Module Packaging: Bulk Mounting Type: Chassis Mount | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DUM16T3AG | Microchip Technology | Description: SIC 2N-CH 1200V 173A SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP3F Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DUM31CTBL1NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1 | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DUM31CTBL1NG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-BL1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 310W Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 79A Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DUM31TBL1NG | Microchip Technology | Description: SIC 2N-CH 1200V 79A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 310W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120DUM31TBL1NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-BL1 | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM063AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM063AG | Microchip Technology | Description: MOSFET 4N-CH 1200V 333A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 873W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM063CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM063CAG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM083AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM083AG | Microchip Technology | Description: MOSFET 4N-CH 1200V 251A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1.042kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM083CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM083CAG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16CT3AG | Microchip Technology | Description: MOSFET 4N-CH 1200V 173A SP3F Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 745W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16CTBL3NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL3 | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM16CTBL3NG | Microchip Technology | Description: SIC 4N-CH 1200V 150A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 150A Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 560W Technology: Silicon Carbide (SiC) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 4 N-Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16T3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16T3AG | Microchip Technology | Description: SIC 4N-CH 1200V 173A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 745W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16TBL3NG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-BL3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM16TBL3NG | Microchip Technology | Description: SIC 6N-CH 1200V 150A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 560W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM31CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM31CT3AG | Microchip Technology | Description: SIC 4N-CH 1200V 89A SP3F Part Status: Active Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM31CT3AG | Microchip Technology / Atmel | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM31CTBL2NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM31T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM31T3AG | Microchip Technology | Description: SIC 4N-CH 1200V 89A Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||
| MSCSM120HM31TBL2NG | Microchip Technology | Description: SIC 4N-CH 1200V 79A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 310W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |