Produkte > RQ3

MOSFET Pch -20V -30A Si MOSFET

auf Bestellung 3548 Stücke:

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18+	2.91 EUR
20+	2.63 EUR
100+	2.03 EUR
500+	1.68 EUR
1000+	1.32 EUR
3000+	1.24 EUR
6000+	1.2 EUR

Mindestbestellmenge: 18

RQ3C150BCTB

Description: MOSFET P-CHANNEL 20V 30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V

auf Bestellung 9458 Stücke:

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10+	2.76 EUR
12+	2.25 EUR
100+	1.75 EUR
500+	1.48 EUR
1000+	1.21 EUR

Mindestbestellmenge: 10

RQ3C150BCTB

RQ3C150BCTB SMD P channel transistors

Produkt ist nicht verfügbar

RQ3C150BCTB

Description: MOSFET P-CHANNEL 20V 30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.14 EUR
6000+	1.08 EUR

Mindestbestellmenge: 3000

RQ3E070BNTB

Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V

auf Bestellung 4367 Stücke:

Lieferzeit 21-28 Tag (e)

24+	1.09 EUR
31+	0.86 EUR
100+	0.52 EUR
500+	0.48 EUR
1000+	0.33 EUR

Mindestbestellmenge: 24

RQ3E070BNTB

RQ3E070BNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E070BNTB

Description: MOSFET N-CH 30V 7A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.3 EUR

Mindestbestellmenge: 3000

RQ3E070BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 10820 Stücke:

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RQ3E070BNTB1

MOSFET MOSFET

auf Bestellung 5979 Stücke:

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24+	2.18 EUR
27+	1.93 EUR
100+	1.51 EUR
500+	1.25 EUR
1000+	1.07 EUR
3000+	0.91 EUR
9000+	0.84 EUR

Mindestbestellmenge: 24

RQ3E075ATTB

MOSFET Pch -30V -18A Si MOSFET

auf Bestellung 2463 Stücke:

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21+	2.57 EUR
100+	2.01 EUR
500+	1.66 EUR
1000+	1.31 EUR
3000+	1.22 EUR
6000+	1.16 EUR

Mindestbestellmenge: 19

RQ3E075ATTB

Description: MOSFET P-CHANNEL 30V 18A 8HSMT

Produkt ist nicht verfügbar

RQ3E075ATTB

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -30A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

RQ3E075ATTB

Produkt ist nicht verfügbar

RQ3E075ATTB

Description: MOSFET P-CHANNEL 30V 18A 8HSMT

auf Bestellung 1181 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E080BN

MOSFET

Produkt ist nicht verfügbar

RQ3E080BNTB

Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V

auf Bestellung 36000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.39 EUR

Mindestbestellmenge: 3000

RQ3E080BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 14503 Stücke:

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44+	1.21 EUR
60+	0.87 EUR
104+	0.5 EUR
1000+	0.36 EUR
3000+	0.31 EUR
9000+	0.28 EUR

Mindestbestellmenge: 44

RQ3E080BNTB

Description: ROHM - RQ3E080BNTB - Leistungs-MOSFET, n-Kanal, 30 V, 15 A, 0.011 ohm, HSMT, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 14W
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 14W
Bauform - Transistor: HSMT
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.011ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2913 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3E080BNTB

RQ3E080BNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E080BNTB

Trans MOSFET N-CH 30V 8A 8-Pin HSMT EP T/R

auf Bestellung 5578 Stücke:

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488+	0.32 EUR
491+	0.31 EUR
561+	0.26 EUR
1000+	0.24 EUR
3000+	0.22 EUR

Mindestbestellmenge: 488

RQ3E080BNTB

Description: MOSFET N-CH 30V 8A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V

auf Bestellung 41389 Stücke:

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20+	1.35 EUR
24+	1.1 EUR
100+	0.75 EUR
500+	0.56 EUR
1000+	0.42 EUR

Mindestbestellmenge: 20

RQ3E080BNTB

auf Bestellung 2913 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3E080BNTB

Trans MOSFET N-CH 30V 8A 8-Pin HSMT EP T/R

auf Bestellung 3000 Stücke:

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438+	0.37 EUR
500+	0.31 EUR
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RQ3E080GNTB

Description: MOSFET N-CH 30V 8A 8HSMT

auf Bestellung 1048 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E080GNTB

Description: MOSFET N-CH 30V 8A 8HSMT

Produkt ist nicht verfügbar

RQ3E080GNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 423 Stücke:

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41+	1.27 EUR
51+	1.02 EUR
100+	0.7 EUR
500+	0.53 EUR

Mindestbestellmenge: 41

RQ3E080GNTB

RQ3E080GNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E100ATTB

MOSFET RQ3E100AT is the high reliability transistor, suitable for switching applications.

auf Bestellung 2569 Stücke:

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26+	2.01 EUR
32+	1.66 EUR
100+	1.29 EUR
500+	1.09 EUR
1000+	0.89 EUR
3000+	0.84 EUR
6000+	0.8 EUR

Mindestbestellmenge: 26

RQ3E100ATTB

Description: MOSFET P-CH 30V 10A/31A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V

auf Bestellung 7342 Stücke:

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13+	2.03 EUR
16+	1.65 EUR
100+	1.28 EUR
500+	1.09 EUR
1000+	0.89 EUR

Mindestbestellmenge: 13

RQ3E100ATTB

Description: MOSFET P-CH 30V 10A/31A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.83 EUR
6000+	0.79 EUR

Mindestbestellmenge: 3000

RQ3E100BN

MOSFET

Produkt ist nicht verfügbar

RQ3E100BNTB

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

RQ3E100BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 119483 Stücke:

Lieferzeit 14-28 Tag (e)

57+	0.92 EUR
67+	0.78 EUR
100+	0.58 EUR
500+	0.46 EUR
1000+	0.37 EUR
3000+	0.31 EUR
9000+	0.29 EUR

Mindestbestellmenge: 57

RQ3E100BNTB

Description: MOSFET N-CH 30V 10A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V

auf Bestellung 75000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.33 EUR
6000+	0.31 EUR
9000+	0.29 EUR
30000+	0.28 EUR

Mindestbestellmenge: 3000

RQ3E100BNTB

Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

415+	0.38 EUR
500+	0.35 EUR
1000+	0.33 EUR
2500+	0.3 EUR

Mindestbestellmenge: 415

RQ3E100BNTB

Produkt ist nicht verfügbar

RQ3E100BNTB

Description: ROHM - RQ3E100BNTB - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.0077 ohm, HSMT, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 10
Qualifikation: -
Verlustleistung Pd: 2
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung: 2
Bauform - Transistor: HSMT
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0077
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0077
SVHC: No SVHC (10-Jun-2022)

Produkt ist nicht verfügbar

RQ3E100BNTB

Description: MOSFET N-CH 30V 10A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V

auf Bestellung 83110 Stücke:

Lieferzeit 21-28 Tag (e)

27+	0.99 EUR
32+	0.83 EUR
100+	0.58 EUR
500+	0.45 EUR
1000+	0.37 EUR

Mindestbestellmenge: 27

RQ3E100BNTB

Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

464+	0.34 EUR

Mindestbestellmenge: 464

RQ3E100BNTB1

MOSFET MOSFET

auf Bestellung 3333 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.76 EUR
21+	2.48 EUR
100+	1.93 EUR
500+	1.6 EUR

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RQ3E100BNTB1

Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.04 EUR
6000+	1 EUR

Mindestbestellmenge: 3000

RQ3E100BNTB1

Description: NCH 30V 21A POWER MOSFET: RQ3E10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V

auf Bestellung 8642 Stücke:

Lieferzeit 21-28 Tag (e)

11+	2.52 EUR
13+	2.07 EUR
100+	1.61 EUR
500+	1.36 EUR
1000+	1.11 EUR

Mindestbestellmenge: 11

RQ3E100GNTB

Description: ROHM - RQ3E100GNTB - Leistungs-MOSFET, n-Kanal, 30 V, 21 A, 0.0089 ohm, HSMT, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 21
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 15
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung: 15
Bauform - Transistor: HSMT
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0089
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0089
SVHC: No SVHC (10-Jun-2022)

Produkt ist nicht verfügbar

RQ3E100GNTB

Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R

auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)

511+	0.31 EUR
530+	0.28 EUR
1000+	0.27 EUR
2500+	0.25 EUR

Mindestbestellmenge: 511

RQ3E100GNTB

Description: MOSFET N-CH 30V 10A 8HSMT

Produkt ist nicht verfügbar

RQ3E100GNTB

Description: ROHM - RQ3E100GNTB - Leistungs-MOSFET, n-Kanal, 30 V, 21 A, 0.0089 ohm, HSMT, Oberflächenmontage
Verlustleistung: 15
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.0089
Qualifikation: -
SVHC: No SVHC (10-Jun-2022)

Produkt ist nicht verfügbar

RQ3E100GNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 199 Stücke:

Lieferzeit 14-28 Tag (e)

44+	1.2 EUR
50+	1.04 EUR
100+	0.78 EUR
500+	0.61 EUR

Mindestbestellmenge: 44

RQ3E100GNTB

Description: MOSFET N-CH 30V 10A 8HSMT

Produkt ist nicht verfügbar

RQ3E100MNTB1

Description: MOSFET N-CH 30V 10A HSMT8

auf Bestellung 5261 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.73 EUR
11+	2.44 EUR
100+	1.9 EUR
500+	1.57 EUR
1000+	1.24 EUR

Mindestbestellmenge: 10

RQ3E100MNTB1

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 2532 Stücke:

Lieferzeit 14-28 Tag (e)

19+	2.78 EUR
23+	2.28 EUR
100+	1.77 EUR
500+	1.5 EUR
1000+	1.22 EUR
3000+	1.13 EUR
6000+	1.08 EUR

Mindestbestellmenge: 19

RQ3E100MNTB1

Description: MOSFET N-CH 30V 10A HSMT8

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.16 EUR

Mindestbestellmenge: 3000

RQ3E100MNTB1

Description: MOSFET N-CH 30V 10A HSMT8

Produkt ist nicht verfügbar

RQ3E110AJTB

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 44A; 15W; HSMT8
Case: HSMT8
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 44A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

RQ3E110AJTB

Description: MOSFET N-CH 30V 11A/24A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.67 EUR
6000+	0.64 EUR
9000+	0.59 EUR

Mindestbestellmenge: 3000

RQ3E110AJTB

Produkt ist nicht verfügbar

RQ3E110AJTB

Description: MOSFET N-CH 30V 11A/24A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V

auf Bestellung 13868 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.74 EUR
18+	1.53 EUR
100+	1.06 EUR
500+	0.88 EUR
1000+	0.75 EUR

Mindestbestellmenge: 15

RQ3E110AJTB

MOSFET RQ3E110AJ is low on-resistance and Small Surface Mount Package MOSFET for switching application.

auf Bestellung 2954 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.77 EUR
34+	1.54 EUR
100+	1.07 EUR
500+	0.89 EUR
1000+	0.76 EUR
3000+	0.67 EUR
6000+	0.64 EUR

Mindestbestellmenge: 30

RQ3E120ATTB

Description: MOSFET P-CH 30V 12A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.67 EUR
6000+	0.63 EUR
9000+	0.59 EUR

Mindestbestellmenge: 3000

RQ3E120ATTB

Description: MOSFET P-CH 30V 12A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V

auf Bestellung 21539 Stücke:

Lieferzeit 21-28 Tag (e)

15+	1.77 EUR
18+	1.52 EUR
100+	1.05 EUR
500+	0.88 EUR
1000+	0.75 EUR

Mindestbestellmenge: 15

RQ3E120ATTB

MOSFET -30V P-CHANNEL -12A

auf Bestellung 81757 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.79 EUR
35+	1.5 EUR
100+	1.07 EUR
500+	0.9 EUR
1000+	0.76 EUR
3000+	0.68 EUR
6000+	0.64 EUR

Mindestbestellmenge: 30

RQ3E120ATTB

RQ3E120ATTB SMD P channel transistors

Produkt ist nicht verfügbar

RQ3E120BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 1831 Stücke:

Lieferzeit 14-28 Tag (e)

RQ3E120BNTB

Description: MOSFET N-CH 30V 12A HSMT8

Produkt ist nicht verfügbar

RQ3E120BNTB

Description: MOSFET N-CH 30V 12A HSMT8

auf Bestellung 2 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E120BNTB

Description: ROHM - RQ3E120BNTB - Leistungs-MOSFET, n-Kanal, 30 V, 12 A, 0.0066 ohm, HSMT, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 12
Qualifikation: -
Verlustleistung Pd: 2
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung: 2
Bauform - Transistor: HSMT
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0066
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0066
SVHC: No SVHC (10-Jun-2022)

Produkt ist nicht verfügbar

RQ3E120GNTB

Description: MOSFET N-CH 30V 12A 8-HSMT

auf Bestellung 2621 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E120GNTB

RQ3E120GNTB SMD N channel transistors

auf Bestellung 2988 Stücke:

Lieferzeit 7-14 Tag (e)

188+	0.38 EUR
266+	0.27 EUR
281+	0.25 EUR

Mindestbestellmenge: 188

RQ3E120GNTB

Description: MOSFET N-CH 30V 12A 8-HSMT

auf Bestellung 2621 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E120GNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 11564 Stücke:

Lieferzeit 14-28 Tag (e)

RQ3E120GNTB

Description: MOSFET N-CH 30V 12A 8-HSMT

Produkt ist nicht verfügbar

RQ3E130BNTB

Description: MOSFET N-CH 30V 13A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E130BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 2976 Stücke:

Lieferzeit 14-28 Tag (e)

39+	1.35 EUR
49+	1.06 EUR
100+	0.8 EUR
500+	0.63 EUR
1000+	0.51 EUR
3000+	0.43 EUR
9000+	0.4 EUR

Mindestbestellmenge: 39

RQ3E130BNTB

Description: MOSFET N-CH 30V 13A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V

auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)

19+	1.38 EUR
23+	1.17 EUR
100+	0.82 EUR
500+	0.64 EUR
1000+	0.52 EUR

Mindestbestellmenge: 19

RQ3E130BNTB

RQ3E130BNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E130MNTB1

Description: MOSFET N-CH 30V 13A HSMT8

Produkt ist nicht verfügbar

RQ3E130MNTB1

Description: MOSFET N-CH 30V 13A 8HSMT

auf Bestellung 2969 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E130MNTB1

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 1499 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.25 EUR
18+	2.91 EUR
100+	2.27 EUR
500+	1.87 EUR

Mindestbestellmenge: 16

RQ3E150BNTB

Description: MOSFET N-CH 30V 15A 8HSMT

auf Bestellung 26 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E150BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 956 Stücke:

Lieferzeit 14-28 Tag (e)

RQ3E150BNTB

RQ3E150BNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E150BNTB

Description: MOSFET N-CH 30V 15A 8HSMT

Produkt ist nicht verfügbar

RQ3E150GNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 599 Stücke:

Lieferzeit 14-28 Tag (e)

40+	1.33 EUR
49+	1.07 EUR
100+	0.67 EUR
1000+	0.53 EUR

Mindestbestellmenge: 40

RQ3E150GNTB

RQ3E150GNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E150GNTB

Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.48 EUR
6000+	0.45 EUR
9000+	0.42 EUR

Mindestbestellmenge: 3000

RQ3E150GNTB

Description: MOSFET N-CH 30V 15A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 15 V

auf Bestellung 19165 Stücke:

Lieferzeit 21-28 Tag (e)

19+	1.43 EUR
22+	1.21 EUR
100+	0.84 EUR
500+	0.66 EUR
1000+	0.54 EUR

Mindestbestellmenge: 19

RQ3E150MNTB1

Description: MOSFET N-CH 30V 15A 8HSMT

auf Bestellung 2355 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E150MNTB1

Description: MOSFET N-CH 30V 15A 8HSMT

Produkt ist nicht verfügbar

RQ3E150MNTB1

MOSFET

Produkt ist nicht verfügbar

RQ3E160ADTB

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8
Case: HSMT8
Mounting: SMD
On-state resistance: 7mΩ
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 64A
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±20V

Produkt ist nicht verfügbar

RQ3E160ADTB

Description: MOSFET N-CH 30V 16A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V

Produkt ist nicht verfügbar

RQ3E160ADTB

MOSFET Nch 30V 16A Middle Power MOSFET

auf Bestellung 2393 Stücke:

Lieferzeit 14-28 Tag (e)

30+	1.77 EUR
36+	1.46 EUR
100+	1.07 EUR
500+	0.89 EUR
1000+	0.76 EUR
3000+	0.68 EUR
6000+	0.64 EUR

Mindestbestellmenge: 30

RQ3E160ADTB

Description: ROHM - RQ3E160ADTB - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 0.0035 ohm, HSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: HSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0035ohm

auf Bestellung 2122 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3E160ADTB

Description: MOSFET N-CH 30V 16A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V

auf Bestellung 4 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3E160ADTB

Produkt ist nicht verfügbar

RQ3E160ADTB

auf Bestellung 2712 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3E160ADTB1

Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

7+	4.11 EUR
10+	3.67 EUR
100+	2.86 EUR
500+	2.37 EUR
1000+	1.87 EUR

Mindestbestellmenge: 7

RQ3E160ADTB1

Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.74 EUR

Mindestbestellmenge: 3000

RQ3E160ADTB1

MOSFET MOSFET

auf Bestellung 6990 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.67 EUR
18+	3.02 EUR
100+	2.34 EUR
500+	1.98 EUR
1000+	1.81 EUR
3000+	1.54 EUR
9000+	1.43 EUR

Mindestbestellmenge: 15

RQ3E180AJTB

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Produkt ist nicht verfügbar

RQ3E180AJTB

MOSFET Nch 30V 18A Middle Power MOSFET

auf Bestellung 6171 Stücke:

Lieferzeit 14-28 Tag (e)

20+	2.68 EUR
24+	2.2 EUR
100+	1.71 EUR
500+	1.45 EUR
1000+	1.18 EUR
3000+	1.11 EUR
6000+	1.06 EUR

Mindestbestellmenge: 20

RQ3E180AJTB

Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.1 EUR
6000+	1.04 EUR
9000+	0.99 EUR

Mindestbestellmenge: 3000

RQ3E180AJTB

Produkt ist nicht verfügbar

RQ3E180AJTB

ROHM - Japan

MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN RQ3E180AJTB TRQ3e180ajtb
Anzahl je Verpackung: 10 Stücke

auf Bestellung 50 Stücke:

Lieferzeit 7-14 Tag (e)

30+	1.26 EUR

Mindestbestellmenge: 30

RQ3E180AJTB

Description: MOSFET N-CH 30V 18A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V

auf Bestellung 16589 Stücke:

Lieferzeit 21-28 Tag (e)

10+	2.65 EUR
13+	2.17 EUR
100+	1.68 EUR
500+	1.43 EUR
1000+	1.16 EUR

Mindestbestellmenge: 10

RQ3E180AJTB1

MOSFET MOSFET

auf Bestellung 2458 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.56 EUR
18+	2.94 EUR
100+	2.27 EUR
500+	1.92 EUR
1000+	1.76 EUR
3000+	1.49 EUR
9000+	1.39 EUR

Mindestbestellmenge: 15

RQ3E180AJTB1

Description: NCH 30V 18A MIDDLE POWER MOSFET:

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.6 EUR

Mindestbestellmenge: 3000

RQ3E180AJTB1

Description: NCH 30V 18A MIDDLE POWER MOSFET:

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.76 EUR
10+	3 EUR
100+	2.22 EUR
500+	2.04 EUR
1000+	1.68 EUR

Mindestbestellmenge: 6

RQ3E180BNTB

Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V

auf Bestellung 5274 Stücke:

Lieferzeit 21-28 Tag (e)

17+	1.61 EUR
19+	1.4 EUR
100+	0.97 EUR
500+	0.81 EUR
1000+	0.69 EUR

Mindestbestellmenge: 17

RQ3E180BNTB

RQ3E180BNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E180BNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 2001 Stücke:

Lieferzeit 14-28 Tag (e)

33+	1.58 EUR
38+	1.39 EUR
100+	1.07 EUR
500+	0.84 EUR

Mindestbestellmenge: 33

RQ3E180BNTB

Description: MOSFET N-CHANNEL 30V 39A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.61 EUR

Mindestbestellmenge: 3000

RQ3E180BNTB1

Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V

auf Bestellung 2820 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.73 EUR
10+	2.99 EUR
100+	2.21 EUR
500+	2.03 EUR
1000+	1.67 EUR

Mindestbestellmenge: 6

RQ3E180BNTB1

MOSFET MOSFET

auf Bestellung 5885 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4 EUR
16+	3.28 EUR
100+	2.56 EUR
500+	2.17 EUR
1000+	1.98 EUR
3000+	1.68 EUR
9000+	1.57 EUR

Mindestbestellmenge: 13

RQ3E180BNTB1

Description: NCH 30V 39A MIDDLE POWER MOSFET:
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V

Produkt ist nicht verfügbar

RQ3E180GNTB

RQ3E180GNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3E180GNTB

Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V

auf Bestellung 4770 Stücke:

Lieferzeit 21-28 Tag (e)

16+	1.64 EUR
19+	1.41 EUR
100+	0.98 EUR
500+	0.82 EUR
1000+	0.7 EUR

Mindestbestellmenge: 16

RQ3E180GNTB

Description: MOSFET N-CH 30V 18A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V

auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.62 EUR

Mindestbestellmenge: 3000

RQ3E180GNTB

MOSFET 4.5V Drive Nch MOSFET

auf Bestellung 3 Stücke:

Lieferzeit 14-28 Tag (e)

31+	1.69 EUR
36+	1.48 EUR
100+	1.14 EUR
500+	0.9 EUR

Mindestbestellmenge: 31

RQ3G100GNTB

MOSFET Nch 40V 10A Power MOSFET

auf Bestellung 18354 Stücke:

Lieferzeit 14-28 Tag (e)

43+	1.23 EUR
49+	1.08 EUR
100+	0.75 EUR
500+	0.58 EUR
1000+	0.48 EUR
3000+	0.4 EUR
9000+	0.37 EUR

Mindestbestellmenge: 43

RQ3G100GNTB

Description: ROHM - RQ3G100GNTB - Leistungs-MOSFET, n-Kanal, 40 V, 10 A, 0.011 ohm, HSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: HSMT
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 6248 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3G100GNTB

Description: MOSFET N-CH 40V 10A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 20 V

auf Bestellung 116812 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	0.44 EUR
6000+	0.41 EUR
15000+	0.39 EUR
30000+	0.37 EUR

Mindestbestellmenge: 3000

RQ3G100GNTB

RQ3G100GNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3G100GNTB

Description: MOSFET N-CH 40V 10A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 20 V

auf Bestellung 122311 Stücke:

Lieferzeit 21-28 Tag (e)

21+	1.25 EUR
25+	1.07 EUR
100+	0.8 EUR
500+	0.63 EUR
1000+	0.49 EUR

Mindestbestellmenge: 21

RQ3G110ATTB

MOSFET Pch -40V -35A, HSMT8, Power MOSFET

auf Bestellung 7200 Stücke:

Lieferzeit 14-28 Tag (e)

14+	3.72 EUR
17+	3.09 EUR
100+	2.47 EUR
250+	2.4 EUR
500+	2.06 EUR
1000+	1.77 EUR
3000+	1.67 EUR

Mindestbestellmenge: 14

RQ3G110ATTB

Description: PCH -40V -35A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.65 EUR
6000+	1.59 EUR

Mindestbestellmenge: 3000

RQ3G110ATTB

Description: PCH -40V -35A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 20 V

auf Bestellung 8639 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.67 EUR
10+	3.04 EUR
100+	2.42 EUR
500+	2.05 EUR
1000+	1.74 EUR

Mindestbestellmenge: 8

RQ3G150GNTB

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ

Produkt ist nicht verfügbar

RQ3G150GNTB

Description: MOSFET N-CHANNEL 40V 39A 8HSMT

Produkt ist nicht verfügbar

RQ3G150GNTB

Produkt ist nicht verfügbar

RQ3G150GNTB

MOSFET Nch 40V 30Aw Si MOSFET

auf Bestellung 3708 Stücke:

Lieferzeit 14-28 Tag (e)

18+	3.04 EUR
20+	2.73 EUR
100+	2.11 EUR
500+	1.74 EUR
1000+	1.38 EUR
3000+	1.29 EUR
6000+	1.22 EUR

Mindestbestellmenge: 18

RQ3G150GNTB

Description: MOSFET N-CHANNEL 40V 39A 8HSMT

auf Bestellung 1402 Stücke:

Lieferzeit 21-28 Tag (e)

RQ3L050GNTB

MOSFET Nch 60V 12A Si MOSFET

auf Bestellung 15000 Stücke:

Lieferzeit 14-28 Tag (e)

RQ3L050GNTB

RQ3L050GNTB SMD N channel transistors

Produkt ist nicht verfügbar

RQ3L070ATTB

Description: PCH -60V -25A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V

auf Bestellung 6716 Stücke:

Lieferzeit 21-28 Tag (e)

8+	3.41 EUR
10+	2.79 EUR
100+	2.17 EUR
500+	1.84 EUR
1000+	1.5 EUR

Mindestbestellmenge: 8

RQ3L070ATTB

Description: ROHM - RQ3L070ATTB - Leistungs-MOSFET, p-Kanal, 60 V, 25 A, 0.022 ohm, HSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: HSMT
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.022ohm

auf Bestellung 2028 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3L070ATTB

Description: PCH -60V -25A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.41 EUR
6000+	1.34 EUR

Mindestbestellmenge: 3000

RQ3L070ATTB

RQ3L070ATTB SMD P channel transistors

Produkt ist nicht verfügbar

RQ3L070ATTB

Description: ROHM - RQ3L070ATTB - Leistungs-MOSFET, p-Kanal, 60 V, 25 A, 0.022 ohm, HSMT, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 2W
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: HSMT
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.022ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.022ohm

auf Bestellung 2028 Stücke:

Lieferzeit 14-21 Tag (e)

RQ3L070ATTB

MOSFET Pch -60V -25A, HSMT8, Power MOSFET

auf Bestellung 10467 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.43 EUR
19+	2.83 EUR
100+	2.19 EUR
500+	1.85 EUR
1000+	1.51 EUR
3000+	1.42 EUR
6000+	1.35 EUR

Mindestbestellmenge: 16

RQ3L070BGTB1

MOSFET NCH 60V 20A, HSMT8G

auf Bestellung 5770 Stücke:

Lieferzeit 14-28 Tag (e)

24+	2.23 EUR
29+	1.83 EUR
100+	1.42 EUR
500+	1.2 EUR
1000+	1.1 EUR
3000+	0.94 EUR
6000+	0.89 EUR

Mindestbestellmenge: 24

RQ3L090GNTB

MOSFET Nch 60V 30A Middle Power MOSFET

auf Bestellung 5750 Stücke:

Lieferzeit 14-28 Tag (e)

16+	3.43 EUR
19+	2.83 EUR
100+	2.18 EUR
500+	1.85 EUR
1000+	1.51 EUR
3000+	1.42 EUR
6000+	1.35 EUR

Mindestbestellmenge: 16

RQ3L090GNTB

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke

Produkt ist nicht verfügbar

RQ3L090GNTB

Description: MOSFET N-CH 60V 9A/30A 8HSMT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 300µA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V

auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)

7+	3.85 EUR
10+	3.43 EUR
100+	2.67 EUR
500+	2.21 EUR
1000+	1.74 EUR

Mindestbestellmenge: 7

RQ3L090GNTB

Description: MOSFET N-CH 60V 9A/30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 300µA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 30 V

auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	1.63 EUR
6000+	1.55 EUR
15000+	1.49 EUR

Mindestbestellmenge: 3000

RQ3L090GNTB

Produkt ist nicht verfügbar

RQ3P045ATTB1

MOSFET Pch -100V -14.5A Power MOSFET: RQ3P045AT is a low on-resistance MOSFET suitable for switching and load switches.

auf Bestellung 2910 Stücke:

Lieferzeit 14-28 Tag (e)

15+	3.69 EUR
17+	3.07 EUR
100+	2.46 EUR
250+	2.25 EUR
500+	2.04 EUR
1000+	1.85 EUR
3000+	1.61 EUR

Mindestbestellmenge: 15

RQ3P300BETB1

Description: MOSFET N-CH 100V 10A/36A 8HSMT

Produkt ist nicht verfügbar

RQ3P300BETB1

Description: MOSFET N-CH 100V 10A/36A 8HSMT

Produkt ist nicht verfügbar

RQ3P300BHTB1

Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V

auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)

3000+	2.59 EUR
6000+	2.49 EUR
9000+	2.41 EUR

Mindestbestellmenge: 3000

RQ3P300BHTB1

MOSFET Nch 100V 39A, HSMT8, Power MOSFET.

auf Bestellung 3000 Stücke:

Lieferzeit 14-28 Tag (e)

RQ3P300BHTB1

Description: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V

auf Bestellung 14405 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.75 EUR
10+	4.76 EUR
100+	3.79 EUR
500+	3.21 EUR
1000+	2.72 EUR

Mindestbestellmenge: 5

RQ3P300BHTB1