Suchergebnisse für "QFET" : 101

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FQPF13N50CF FQPF13N50CF onsemi / Fairchild FQPF13N50CF_D-2313882.pdf MOSFET HIGH VOLTAGE
auf Bestellung 92 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.07 EUR
50+ 5.64 EUR
100+ 4.84 EUR
500+ 4.26 EUR
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Mindestbestellmenge: 8
FQPF19N20C FQPF19N20C onsemi / Fairchild FQPF19N20C_D-2313996.pdf MOSFET 200V N-Channel Advance Q-FET
auf Bestellung 5428 Stücke:
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FQPF27P06 FQPF27P06 onsemi / Fairchild FQPF27P06_D-2314163.pdf MOSFET 60V P-Channel QFET
auf Bestellung 20891 Stücke:
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FQPF2N80 FQPF2N80 onsemi / Fairchild FQPF2N80_D-2313682.pdf MOSFET 800V N-Channel QFET
auf Bestellung 1113 Stücke:
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13+4.08 EUR
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Mindestbestellmenge: 13
FQPF3N80C FQPF3N80C onsemi / Fairchild FQPF3N80C_D-2313713.pdf MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 629 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.95 EUR
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500+ 2.51 EUR
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Mindestbestellmenge: 14
FQPF47P06 FQPF47P06 onsemi / Fairchild FQPF47P06_D-2313778.pdf MOSFET 60V P-Channel QFET
auf Bestellung 23429 Stücke:
Lieferzeit 217-231 Tag (e)
7+7.59 EUR
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FQPF7P20 FQPF7P20 onsemi / Fairchild FQPF7P20_D-2314165.pdf MOSFET 200V P-Channel QFET
auf Bestellung 7819 Stücke:
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13+4.26 EUR
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100+ 2.81 EUR
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Mindestbestellmenge: 13
FQPF8N60CFT ONS fqpf8n60cf-d.pdf MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
1+22.32 EUR
FQT1N60CTF-WS FQT1N60CTF-WS onsemi / Fairchild FQT1N60CTF_WS_D-3150219.pdf MOSFET 600V 0.2A 11.5Ohm N-Channel
auf Bestellung 11893 Stücke:
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30+1.77 EUR
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Mindestbestellmenge: 30
FQT4N20LTF FQT4N20LTF onsemi / Fairchild FQT4N20L_D-2314063.pdf MOSFET 200V Single
auf Bestellung 64821 Stücke:
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2000+ 0.72 EUR
4000+ 0.65 EUR
Mindestbestellmenge: 28
FQT5P10TF FQT5P10TF onsemi / Fairchild FQT5P10_D-2313917.pdf MOSFET -100V Single
auf Bestellung 151341 Stücke:
Lieferzeit 343-357 Tag (e)
29+1.81 EUR
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Mindestbestellmenge: 29
FQT7N10LTF FQT7N10LTF onsemi / Fairchild FQT7N10LTF_D-2313819.pdf MOSFET 100V Single
auf Bestellung 533 Stücke:
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31+1.72 EUR
35+ 1.49 EUR
100+ 1.03 EUR
500+ 0.86 EUR
1000+ 0.74 EUR
2000+ 0.68 EUR
4000+ 0.63 EUR
Mindestbestellmenge: 31
FQAF16N50 FQAF16N50 ONSEMI FQAF16N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB12P20TM FQB12P20TM ONSEMI FQB12P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB19N20CTM FQB19N20CTM ONSEMI FQB19N20C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Pulsed drain current: 76A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB19N20TM FQB19N20TM ONSEMI FQB19N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.3A
Pulsed drain current: 78A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB22P10TM FQB22P10TM ONSEMI FQB22P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB27P06TM FQB27P06TM ONSEMI FQB27P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB33N10TM FQB33N10TM ONSEMI FQB33N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB34N20LTM FQB34N20LTM ONSEMI FQB34N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB34P10TM FQB34P10TM ONSEMI FQB34P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB44N10TM ONSEMI FAIR-S-A0000097551-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI FQB47P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB4N80TM ONSEMI fqi4n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB50N06TM FQB50N06TM ONSEMI FAIRS45719-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB5N50CTM FQB5N50CTM ONSEMI FQB5N50C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 73W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB7P20TM FQB7P20TM ONSEMI FAIR-S-A0000011863-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB8N60CTM FQB8N60CTM ONSEMI fqi8n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB8N90CTM FQB8N90CTM ONSEMI fqb8n90ctm-d.pdf ONSM-S-A0003590779-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD10N20CTM FQD10N20CTM ONSEMI FQD10N20C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
FQD12N20TM FQD12N20TM ONSEMI fqu12n20-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD13N10LTM FQD13N10LTM ONSEMI FQD13N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD13N10TM FQD13N10TM ONSEMI FQD13N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD17N08LTM FQD17N08LTM ONSEMI fqd17n08l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD18N20V2TM FQD18N20V2TM ONSEMI FQD18N20V2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD19N10TM FQD19N10TM ONSEMI fqd19n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD5N15TM ONSEMI fqd5n15-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.72A; Idm: 17.2A; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.72A
Pulsed drain current: 17.2A
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD5P20TM FQD5P20TM ONSEMI FQD5P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PCFQ50N06LW ON Semiconductor N-Channel QFET MOSFET 60V, 52.4A, 21mOhm
Produkt ist nicht verfügbar
FQPF13N50CF FQPF13N50CF_D-2313882.pdf
FQPF13N50CF
Hersteller: onsemi / Fairchild
MOSFET HIGH VOLTAGE
auf Bestellung 92 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.07 EUR
50+ 5.64 EUR
100+ 4.84 EUR
500+ 4.26 EUR
1000+ 3.46 EUR
Mindestbestellmenge: 8
FQPF19N20C FQPF19N20C_D-2313996.pdf
FQPF19N20C
Hersteller: onsemi / Fairchild
MOSFET 200V N-Channel Advance Q-FET
auf Bestellung 5428 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.98 EUR
16+ 3.28 EUR
100+ 2.54 EUR
500+ 2.16 EUR
1000+ 1.71 EUR
Mindestbestellmenge: 14
FQPF27P06 FQPF27P06_D-2314163.pdf
FQPF27P06
Hersteller: onsemi / Fairchild
MOSFET 60V P-Channel QFET
auf Bestellung 20891 Stücke:
Lieferzeit 217-231 Tag (e)
Anzahl Preis ohne MwSt
11+4.91 EUR
14+ 3.95 EUR
100+ 3.28 EUR
500+ 2.76 EUR
1000+ 2.35 EUR
Mindestbestellmenge: 11
FQPF2N80 FQPF2N80_D-2313682.pdf
FQPF2N80
Hersteller: onsemi / Fairchild
MOSFET 800V N-Channel QFET
auf Bestellung 1113 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.08 EUR
16+ 3.41 EUR
100+ 2.68 EUR
250+ 2.59 EUR
500+ 2.27 EUR
1000+ 1.88 EUR
3000+ 1.85 EUR
Mindestbestellmenge: 13
FQPF3N80C FQPF3N80C_D-2313713.pdf
FQPF3N80C
Hersteller: onsemi / Fairchild
MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 629 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.95 EUR
16+ 3.33 EUR
100+ 2.96 EUR
500+ 2.51 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 14
FQPF47P06 FQPF47P06_D-2313778.pdf
FQPF47P06
Hersteller: onsemi / Fairchild
MOSFET 60V P-Channel QFET
auf Bestellung 23429 Stücke:
Lieferzeit 217-231 Tag (e)
Anzahl Preis ohne MwSt
7+7.59 EUR
50+ 6.06 EUR
100+ 5.17 EUR
500+ 4.6 EUR
1000+ 4.06 EUR
Mindestbestellmenge: 7
FQPF7P20 FQPF7P20_D-2314165.pdf
FQPF7P20
Hersteller: onsemi / Fairchild
MOSFET 200V P-Channel QFET
auf Bestellung 7819 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.26 EUR
16+ 3.43 EUR
100+ 2.81 EUR
250+ 2.65 EUR
500+ 2.37 EUR
1000+ 1.86 EUR
Mindestbestellmenge: 13
FQPF8N60CFT fqpf8n60cf-d.pdf
Hersteller: ONS
MOSFET 800V N-Ch Q-FET advance C-Series
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+22.32 EUR
FQT1N60CTF-WS FQT1N60CTF_WS_D-3150219.pdf
FQT1N60CTF-WS
Hersteller: onsemi / Fairchild
MOSFET 600V 0.2A 11.5Ohm N-Channel
auf Bestellung 11893 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
30+1.77 EUR
35+ 1.53 EUR
100+ 1.06 EUR
500+ 0.88 EUR
1000+ 0.75 EUR
2000+ 0.67 EUR
Mindestbestellmenge: 30
FQT4N20LTF FQT4N20L_D-2314063.pdf
FQT4N20LTF
Hersteller: onsemi / Fairchild
MOSFET 200V Single
auf Bestellung 64821 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
28+1.88 EUR
35+ 1.5 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.81 EUR
2000+ 0.72 EUR
4000+ 0.65 EUR
Mindestbestellmenge: 28
FQT5P10TF FQT5P10_D-2313917.pdf
FQT5P10TF
Hersteller: onsemi / Fairchild
MOSFET -100V Single
auf Bestellung 151341 Stücke:
Lieferzeit 343-357 Tag (e)
Anzahl Preis ohne MwSt
29+1.81 EUR
34+ 1.57 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.77 EUR
2000+ 0.69 EUR
Mindestbestellmenge: 29
FQT7N10LTF FQT7N10LTF_D-2313819.pdf
FQT7N10LTF
Hersteller: onsemi / Fairchild
MOSFET 100V Single
auf Bestellung 533 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.72 EUR
35+ 1.49 EUR
100+ 1.03 EUR
500+ 0.86 EUR
1000+ 0.74 EUR
2000+ 0.68 EUR
4000+ 0.63 EUR
Mindestbestellmenge: 31
FQAF16N50 FQAF16N50.pdf
FQAF16N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB12P20TM FQB12P20.pdf
FQB12P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB19N20CTM FQB19N20C.pdf
FQB19N20CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Pulsed drain current: 76A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB19N20TM FQB19N20.pdf
FQB19N20TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.3A
Pulsed drain current: 78A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB22P10TM FQB22P10.pdf
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB27P06TM FQB27P06.pdf
FQB27P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB33N10TM FQB33N10.pdf
FQB33N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB34N20LTM FQB34N20L.pdf
FQB34N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB34P10TM FQB34P10.pdf
FQB34P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB44N10TM FAIR-S-A0000097551-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB47P06TM-AM002 FQB47P06.pdf
FQB47P06TM-AM002
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB4N80TM fqi4n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB50N06TM FAIRS45719-1.pdf?t.download=true&u=5oefqw
FQB50N06TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB5N50CTM FQB5N50C.pdf
FQB5N50CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 73W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB7P20TM FAIR-S-A0000011863-1.pdf?t.download=true&u=5oefqw
FQB7P20TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB8N60CTM fqi8n60c-d.pdf
FQB8N60CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB8N90CTM fqb8n90ctm-d.pdf ONSM-S-A0003590779-1.pdf?t.download=true&u=5oefqw
FQB8N90CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD10N20CTM FQD10N20C.pdf
FQD10N20CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
FQD12N20TM fqu12n20-d.pdf
FQD12N20TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD13N10LTM FQD13N10L.pdf
FQD13N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD13N10TM FQD13N10.pdf
FQD13N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD17N08LTM fqd17n08l-d.pdf
FQD17N08LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD18N20V2TM FQD18N20V2.pdf
FQD18N20V2TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD19N10TM fqd19n10-d.pdf
FQD19N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD5N15TM fqd5n15-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.72A; Idm: 17.2A; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.72A
Pulsed drain current: 17.2A
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD5P20TM FQD5P20.pdf
FQD5P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PCFQ50N06LW
Hersteller: ON Semiconductor
N-Channel QFET MOSFET 60V, 52.4A, 21mOhm
Produkt ist nicht verfügbar
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