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IRLR8256TRPBF IRLR8256TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2228106FCAB3DF1A303005056AB0C4F&compId=irlr8256pbf.pdf?ci_sign=4c2cc703f2abc3f8398209309a4ead7e3bfd184a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
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IRLR8726TRPBF IRLR8726TRPBF INFINEON TECHNOLOGIES irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Pulsed drain current: 340A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 681 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
168+0.43 EUR
191+0.38 EUR
242+0.3 EUR
256+0.28 EUR
2000+0.27 EUR
Mindestbestellmenge: 143
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IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
2000+1.04 EUR
Mindestbestellmenge: 2000
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
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IRLS3034TRLPBF INFINEON TECHNOLOGIES irls3034pbf.pdf?fileId=5546d462533600a401535671b7472707 IRLS3034TRLPBF SMD N channel transistors
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 479 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.53 EUR
23+3.12 EUR
25+2.89 EUR
Mindestbestellmenge: 21
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IRLS3036TRLPBF INFINEON TECHNOLOGIES irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d IRLS3036TRLPBF SMD N channel transistors
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IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Kind of package: reel
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 1.95mΩ
Drain current: 156A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 195W
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRLS4030TRLPBF INFINEON TECHNOLOGIES irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715 IRLS4030TRLPBF SMD N channel transistors
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IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2766 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
157+0.46 EUR
221+0.32 EUR
256+0.28 EUR
486+0.15 EUR
511+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 117
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 613 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
163+0.44 EUR
193+0.37 EUR
222+0.32 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 125
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IRLU024NPBF IRLU024NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 707 Stücke:
Lieferzeit 7-14 Tag (e)
79+0.92 EUR
96+0.75 EUR
122+0.59 EUR
166+0.43 EUR
178+0.4 EUR
525+0.39 EUR
Mindestbestellmenge: 79
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IRLU120NPBF IRLU120NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
63+1.14 EUR
98+0.73 EUR
101+0.72 EUR
10050+0.42 EUR
Mindestbestellmenge: 63
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IRLU3110ZPBF IRLU3110ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 104 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
300+1.17 EUR
3000+1.14 EUR
Mindestbestellmenge: 29
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IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
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IRLU7843PBF INFINEON TECHNOLOGIES irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 IRSDS09616-1.pdf?t.download=true&u=5oefqw IRLU7843PBF THT N channel transistors
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IRLU8743PBF IRLU8743PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506C3BF1A6F5005056AB5A8F&compId=irlr8743pbf.pdf?ci_sign=ec1c3384cca0d2986348f4dc5fc8865732992d42 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.57 EUR
54+1.33 EUR
59+1.23 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 28
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IRLZ24NPBF INFINEON TECHNOLOGIES irlz24npbf.pdf?fileId=5546d462533600a401535671ff87271e IRLZ24NPBF THT N channel transistors
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IRLZ24NSTRLPBF INFINEON TECHNOLOGIES irlz24nspbf.pdf IRLZ24NSTRLPBF SMD N channel transistors
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IRLZ34NPBF IRLZ34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E266EF1A6F5005056AB5A8F&compId=irlz34n.pdf?ci_sign=baf8308bc900f23bfeaeda660831721df1f0c79c description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Gate charge: 16.7nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
65+1.1 EUR
75+0.96 EUR
154+0.46 EUR
Mindestbestellmenge: 52
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IRLZ34NSTRLPBF INFINEON TECHNOLOGIES irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Anzahl je Verpackung: 800 Stücke
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IRLZ44NPBF IRLZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E267CF1A6F5005056AB5A8F&compId=irlz44n.pdf?ci_sign=29c4c6da092dd5917ede6f2c8e0f88e0cbd6dda1 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRLZ44NSTRLPBF IRLZ44NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222829258BE4CF1A303005056AB0C4F&compId=irlz44nspbf.pdf?ci_sign=54f1cf0a982b6a0bce7784544748b957c0758101 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLZ44ZSTRLPBF IRLZ44ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282B0EE823FF1A303005056AB0C4F&compId=irlz44zpbf.pdf?ci_sign=df99f847f67bd5c950d2033f908855d7b1e7f3f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRMCK099M INFINEON TECHNOLOGIES Infineon-IRMCK099M-DS-v01_00-EN.pdf?fileId=5546d462533600a4015356728c57274b IRMCK099M Motor and PWM drivers
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IRS10752LTRPBF INFINEON TECHNOLOGIES irs10752lpbf.pdf?fileId=5546d462533600a40153567308ca276d IRS10752LTRPBF MOSFET/IGBT drivers
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IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Anzahl je Verpackung: 2500 Stücke
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 150ns
Turn-on time: 160ns
Anzahl je Verpackung: 2500 Stücke
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IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991DE094AADB658BF&compId=IRS2007SPBF.pdf?ci_sign=23f41c499e549f21ad84d82168dfac72ba4d0a9a Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 150ns
Turn-on time: 160ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE989A63D80180FB8BF&compId=IRS2008S.pdf?ci_sign=519175befe37f294a90d6c6f0b0c696fd6b6a464 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Anzahl je Verpackung: 3800 Stücke
Produkt ist nicht verfügbar
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IRS2011PBF IRS2011PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26C2F1A6F5005056AB5A8F&compId=irs2011pbf.pdf?ci_sign=8b98cbb48fac23b5d243658ba2d04bebde43ddae description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Power: 1W
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 75ns
Turn-on time: 85ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCEF05BD07A745&compId=IRS20752ltrpbf.pdf?ci_sign=ef2d046c3868bd8f5a439bd44dd071464cf6744b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Kind of package: reel; tape
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Operating temperature: -40...125°C
Output current: -240...160mA
Turn-off time: 255ns
Turn-on time: 225ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2660 Stücke:
Lieferzeit 7-14 Tag (e)
79+0.92 EUR
88+0.82 EUR
94+0.76 EUR
114+0.63 EUR
121+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
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IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991B35094D5D3F8BF&compId=IRS2092.pdf?ci_sign=d30561b8f2167b835e01440d97d321cfe7659908 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1437 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.53 EUR
28+2.56 EUR
30+2.42 EUR
50+2.33 EUR
Mindestbestellmenge: 21
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IRS2093MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DAA4BA9F0B553D7&compId=IRS2093MTRPBF.pdf?ci_sign=e52fc9498b4cbd2fd8fae90e4df59b8441159497 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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IRS20957STRPBF IRS20957STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1355 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.49 EUR
27+2.72 EUR
28+2.6 EUR
29+2.55 EUR
50+2.5 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.3 EUR
95+1.29 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.26 EUR
20+3.6 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRS2106PBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw IRS2106PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108SPBF IRS2108SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.45 EUR
31+2.33 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094PBF IRS21094PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2117SPBF IRS2117SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Anzahl je Verpackung: 95 Stücke
Produkt ist nicht verfügbar
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2122 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.44 EUR
73+0.99 EUR
75+0.96 EUR
77+0.93 EUR
79+0.92 EUR
81+0.89 EUR
100+0.87 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DPBF IRS2153DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 1W
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.92 EUR
27+2.73 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSPBF IRS2153DSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.12 EUR
35+2.04 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 11.5...16.6V DC
Topology: MOSFET half-bridge
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Power: 1.4W
Voltage class: 600V
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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IRS21814SPBF IRS21814SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D3FF1A6F5005056AB5A8F&compId=irs2181.pdf?ci_sign=6993d3a766a3465e140bc82188cb2503d6b7f53b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2481 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.76 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184PBF IRS2184PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184SPBF IRS2184SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
48+1.5 EUR
51+1.42 EUR
53+1.36 EUR
54+1.34 EUR
56+1.29 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8256TRPBF pVersion=0046&contRep=ZT&docId=E2228106FCAB3DF1A303005056AB0C4F&compId=irlr8256pbf.pdf?ci_sign=4c2cc703f2abc3f8398209309a4ead7e3bfd184a
IRLR8256TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8726TRPBF irlr8726pbf.pdf?fileId=5546d462533600a40153567181dd26f7
IRLR8726TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 75W
Pulsed drain current: 340A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 681 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
143+0.5 EUR
168+0.43 EUR
191+0.38 EUR
242+0.3 EUR
256+0.28 EUR
2000+0.27 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF pVersion=0046&contRep=ZT&docId=E2228120F8A1E7F1A303005056AB0C4F&compId=irlr8743pbf.pdf?ci_sign=13caac950d62003a7670c9a3bc787dc6b4dae60e
IRLR8743TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3034TRLPBF irls3034pbf.pdf?fileId=5546d462533600a401535671b7472707
Hersteller: INFINEON TECHNOLOGIES
IRLS3034TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.53 EUR
23+3.12 EUR
25+2.89 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3036TRLPBF irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d
Hersteller: INFINEON TECHNOLOGIES
IRLS3036TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS3813TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b
IRLS3813TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Kind of package: reel
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 1.95mΩ
Drain current: 156A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 195W
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLS4030TRLPBF irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715
Hersteller: INFINEON TECHNOLOGIES
IRLS4030TRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLTS2242TRPBF pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de
IRLTS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -20V
Drain current: -6.9A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2766 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
117+0.61 EUR
157+0.46 EUR
221+0.32 EUR
256+0.28 EUR
486+0.15 EUR
511+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IRLTS6342TRPBF pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84
IRLTS6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 613 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
125+0.57 EUR
163+0.44 EUR
193+0.37 EUR
222+0.32 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
IRLU024NPBF description pVersion=0046&contRep=ZT&docId=E2227DACF5C79FF1A303005056AB0C4F&compId=irlr024npbf.pdf?ci_sign=3af2f11bc76fdb545611693e306e0c4c895c7f1f
IRLU024NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 707 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
79+0.92 EUR
96+0.75 EUR
122+0.59 EUR
166+0.43 EUR
178+0.4 EUR
525+0.39 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
IRLU120NPBF description pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34
IRLU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
63+1.14 EUR
98+0.73 EUR
101+0.72 EUR
10050+0.42 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3110ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f
IRLU3110ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 104 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
300+1.17 EUR
3000+1.14 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3410PBF pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRLU7843PBF irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 IRSDS09616-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
IRLU7843PBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU8743PBF description pVersion=0046&contRep=ZT&docId=E1C04E95506C3BF1A6F5005056AB5A8F&compId=irlr8743pbf.pdf?ci_sign=ec1c3384cca0d2986348f4dc5fc8865732992d42
IRLU8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.57 EUR
54+1.33 EUR
59+1.23 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NPBF irlz24npbf.pdf?fileId=5546d462533600a401535671ff87271e
Hersteller: INFINEON TECHNOLOGIES
IRLZ24NPBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ24NSTRLPBF irlz24nspbf.pdf
Hersteller: INFINEON TECHNOLOGIES
IRLZ24NSTRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E266EF1A6F5005056AB5A8F&compId=irlz34n.pdf?ci_sign=baf8308bc900f23bfeaeda660831721df1f0c79c
IRLZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Gate charge: 16.7nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
52+1.4 EUR
65+1.1 EUR
75+0.96 EUR
154+0.46 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRLZ44NPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E267CF1A6F5005056AB5A8F&compId=irlz44n.pdf?ci_sign=29c4c6da092dd5917ede6f2c8e0f88e0cbd6dda1
IRLZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44NSTRLPBF pVersion=0046&contRep=ZT&docId=E222829258BE4CF1A303005056AB0C4F&compId=irlz44nspbf.pdf?ci_sign=54f1cf0a982b6a0bce7784544748b957c0758101
IRLZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ44ZSTRLPBF pVersion=0046&contRep=ZT&docId=E22282B0EE823FF1A303005056AB0C4F&compId=irlz44zpbf.pdf?ci_sign=df99f847f67bd5c950d2033f908855d7b1e7f3f4
IRLZ44ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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IRMCK099M Infineon-IRMCK099M-DS-v01_00-EN.pdf?fileId=5546d462533600a4015356728c57274b
Hersteller: INFINEON TECHNOLOGIES
IRMCK099M Motor and PWM drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS10752LTRPBF irs10752lpbf.pdf?fileId=5546d462533600a40153567308ca276d
Hersteller: INFINEON TECHNOLOGIES
IRS10752LTRPBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2005STRPBF irs2005s.pdf?fileId=5546d462533600a4015364c4246229e1
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 150ns
Turn-on time: 160ns
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007SPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991DE094AADB658BF&compId=IRS2007SPBF.pdf?ci_sign=23f41c499e549f21ad84d82168dfac72ba4d0a9a
IRS2007SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 150ns
Turn-on time: 160ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2008SPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE989A63D80180FB8BF&compId=IRS2008S.pdf?ci_sign=519175befe37f294a90d6c6f0b0c696fd6b6a464
IRS2008SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Anzahl je Verpackung: 3800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2011PBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26C2F1A6F5005056AB5A8F&compId=irs2011pbf.pdf?ci_sign=8b98cbb48fac23b5d243658ba2d04bebde43ddae
IRS2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Kind of package: tube
Power: 1W
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -1...1A
Turn-off time: 75ns
Turn-on time: 85ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS20752LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE790BCEF05BD07A745&compId=IRS20752ltrpbf.pdf?ci_sign=ef2d046c3868bd8f5a439bd44dd071464cf6744b
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Kind of package: reel; tape
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Operating temperature: -40...125°C
Output current: -240...160mA
Turn-off time: 255ns
Turn-on time: 225ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2660 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
79+0.92 EUR
88+0.82 EUR
94+0.76 EUR
114+0.63 EUR
121+0.59 EUR
1000+0.57 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
IRS2092STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991B35094D5D3F8BF&compId=IRS2092.pdf?ci_sign=d30561b8f2167b835e01440d97d321cfe7659908
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1437 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.53 EUR
28+2.56 EUR
30+2.42 EUR
50+2.33 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRS2093MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DAA4BA9F0B553D7&compId=IRS2093MTRPBF.pdf?ci_sign=e52fc9498b4cbd2fd8fae90e4df59b8441159497
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS20957STRPBF pVersion=0046&contRep=ZT&docId=005056AB82531EE991C5A14E315F78BF&compId=IRS20957S.pdf?ci_sign=22bf15a378893f041d4941ea0b4aa473f9108955
IRS20957STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1355 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.49 EUR
27+2.72 EUR
28+2.6 EUR
29+2.55 EUR
50+2.5 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRS2101SPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2104SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.3 EUR
95+1.29 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.26 EUR
20+3.6 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
IRS2106PBF MOSFET/IGBT drivers
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108PBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2108SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920725F1A6F5005056AB5A8F&compId=irs2108.pdf?ci_sign=e2d1b70ea6bc9920d60f60160b1586e46551e082
IRS2108SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.45 EUR
31+2.33 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094PBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRS21094SPBF pVersion=0046&contRep=ZT&docId=E1C04EA1920748F1A6F5005056AB5A8F&compId=irs2109.pdf?ci_sign=40dc991fd2e25a3d209a2a2992f795b13eace0fd
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2110SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA1920764F1A6F5005056AB5A8F&compId=irs2110.pdf?ci_sign=d7e6b7c7a85603dbb88ebe28cd2f0be131bac1f8
IRS2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2117SPBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118PBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2118SPBF pVersion=0046&contRep=ZT&docId=E1C04EA192079CF1A6F5005056AB5A8F&compId=irs2117pbf.pdf?ci_sign=7ed63ff811be98444618332c7f5c18c4514b046c
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Anzahl je Verpackung: 95 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2122 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.44 EUR
73+0.99 EUR
75+0.96 EUR
77+0.93 EUR
79+0.92 EUR
81+0.89 EUR
100+0.87 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
IRS2153DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 1W
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.92 EUR
27+2.73 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
IRS2153DSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.12 EUR
35+2.04 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSTRPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 11.5...16.6V DC
Topology: MOSFET half-bridge
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Power: 1.4W
Voltage class: 600V
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21814SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D3FF1A6F5005056AB5A8F&compId=irs2181.pdf?ci_sign=6993d3a766a3465e140bc82188cb2503d6b7f53b
IRS21814SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2481 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.76 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184PBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647
IRS2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184SPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647
IRS2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184STRPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
36+2.03 EUR
48+1.5 EUR
51+1.42 EUR
53+1.36 EUR
54+1.34 EUR
56+1.29 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
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