Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152104) > Seite 1306 nach 2536
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IRL1404ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Gate charge: 75nC On-state resistance: 3.1mΩ Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 120A Power dissipation: 230W Pulsed drain current: 790A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 730 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL2203NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 116A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRL2505PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 104A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 394 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL2505STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 360A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRL2910STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRL3103STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRL3705NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB Features of semiconductor devices: logic level Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 65.3nC On-state resistance: 10mΩ Gate-source voltage: ±16V Drain-source voltage: 55V Drain current: 89A Power dissipation: 130W Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2683 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL3705NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRL3705ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 86A Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRL3803PBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRL3803STRLPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRL520NPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 454 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL530NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4007 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 44mΩ Mounting: THT Gate charge: 49.3nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2141 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL540NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 807 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL60B216 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRL60HS118 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRL6342TRPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 415 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL6372TRPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 365 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL7833PBF | INFINEON TECHNOLOGIES |
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auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL7833STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRL80HS120 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRLB3034PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB3036PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 151 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB3813PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB Kind of package: tube Kind of channel: enhancement Mounting: THT Technology: HEXFET® Features of semiconductor devices: logic level Case: TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 57nC On-state resistance: 1.95mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 230W Drain current: 260A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 757 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB4030PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 139 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB4132PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 620A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 794 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB8314PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 664A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 970 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB8721PBF | INFINEON TECHNOLOGIES |
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auf Bestellung 1043 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB8743PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLB8748PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 92A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 165 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLH5030TRPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRLHM620TRPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRLHM630TRPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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IRLHS2242TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.2A Power dissipation: 2.1W Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3890 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLHS6242TRPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Kind of package: reel Polarisation: unipolar Power dissipation: 4.5W Drain current: 12A Drain-source voltage: 20V Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRLHS6342TRPBF | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 1567 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL014NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 2A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1888 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2353 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL024ZTRPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 2391 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL2703TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Technology: HEXFET® Case: SOT223 Type of transistor: N-MOSFET Mounting: SMD On-state resistance: 45mΩ Power dissipation: 1W Drain current: 3.1A Pulsed drain current: 16A Gate-source voltage: ±16V Drain-source voltage: 30V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IRLL2705TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223 Technology: HEXFET® Kind of package: reel Features of semiconductor devices: logic level Case: SOT223 Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.1W Drain current: 3.8A Drain-source voltage: 55V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2334 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML0030TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8683 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML0040TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55762 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML0060TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.7A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6936 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML0100TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5039 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML2030TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8025 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML2060TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2071 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML2244TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10115 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML2246TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23 Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: P-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Power dissipation: 1.3W Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2405 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML2502TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3390 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML2803TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.2A Power dissipation: 0.4W Case: SOT23 On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9847 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML5103TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.61A Power dissipation: 0.54W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3094 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML5203TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4693 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML6244TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Gate charge: 8.9nC Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5450 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML6246TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 46mΩ Mounting: SMD Gate charge: 3.5nC Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4956 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML6302PBF | INFINEON TECHNOLOGIES | IRLML6302PBF SMD P channel transistors |
auf Bestellung 2610 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLML6302TRPBF | INFINEON TECHNOLOGIES |
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auf Bestellung 667 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL1404ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Gate charge: 75nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 230W
Pulsed drain current: 790A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Gate charge: 75nC
On-state resistance: 3.1mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 230W
Pulsed drain current: 790A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 730 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
56+ | 1.29 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
250+ | 1.04 EUR |
IRL2203NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL2505PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 394 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.53 EUR |
35+ | 2.04 EUR |
47+ | 1.53 EUR |
50+ | 1.44 EUR |
2000+ | 1.4 EUR |
IRL2505STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL2910STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3103STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3705NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 65.3nC
On-state resistance: 10mΩ
Gate-source voltage: ±16V
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 65.3nC
On-state resistance: 10mΩ
Gate-source voltage: ±16V
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2683 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
40+ | 1.82 EUR |
90+ | 0.8 EUR |
95+ | 0.76 EUR |
IRL3705NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3705ZSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3803PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRL3803PBF THT N channel transistors
IRL3803PBF THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3803STRLPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRL3803STRLPBF SMD N channel transistors
IRL3803STRLPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL520NPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRL520NPBF THT N channel transistors
IRL520NPBF THT N channel transistors
auf Bestellung 454 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.15 EUR |
132+ | 0.54 EUR |
139+ | 0.52 EUR |
5000+ | 0.51 EUR |
IRL530NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4007 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.7 EUR |
53+ | 1.35 EUR |
124+ | 0.58 EUR |
131+ | 0.55 EUR |
4000+ | 0.53 EUR |
IRL540NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2141 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
44+ | 1.66 EUR |
53+ | 1.35 EUR |
122+ | 0.59 EUR |
130+ | 0.55 EUR |
IRL540NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 807 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.02 EUR |
76+ | 0.94 EUR |
80+ | 0.9 EUR |
1600+ | 0.86 EUR |
IRL60B216 |
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Hersteller: INFINEON TECHNOLOGIES
IRL60B216 THT N channel transistors
IRL60B216 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL60HS118 |
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Hersteller: INFINEON TECHNOLOGIES
IRL60HS118 SMD N channel transistors
IRL60HS118 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL6342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRL6342TRPBF SMD N channel transistors
IRL6342TRPBF SMD N channel transistors
auf Bestellung 415 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.68 EUR |
258+ | 0.28 EUR |
272+ | 0.26 EUR |
IRL6372TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRL6372TRPBF Multi channel transistors
IRL6372TRPBF Multi channel transistors
auf Bestellung 365 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
157+ | 0.46 EUR |
166+ | 0.43 EUR |
IRL7833PBF |
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Hersteller: INFINEON TECHNOLOGIES
IRL7833PBF THT N channel transistors
IRL7833PBF THT N channel transistors
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.32 EUR |
57+ | 1.27 EUR |
60+ | 1.2 EUR |
IRL7833STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL80HS120 |
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Hersteller: INFINEON TECHNOLOGIES
IRL80HS120 SMD N channel transistors
IRL80HS120 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLB3034PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
6+ | 11.91 EUR |
17+ | 4.2 EUR |
200+ | 2.57 EUR |
IRLB3036PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 151 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.36 EUR |
21+ | 3.5 EUR |
23+ | 3.25 EUR |
50+ | 3.19 EUR |
IRLB3813PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Features of semiconductor devices: logic level
Case: TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 230W
Drain current: 260A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Features of semiconductor devices: logic level
Case: TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 230W
Drain current: 260A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 757 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
48+ | 1.52 EUR |
54+ | 1.33 EUR |
IRLB4030PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.96 EUR |
37+ | 1.94 EUR |
39+ | 1.84 EUR |
500+ | 1.79 EUR |
1000+ | 1.77 EUR |
IRLB4132PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 794 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
91+ | 0.79 EUR |
152+ | 0.47 EUR |
160+ | 0.45 EUR |
10000+ | 0.43 EUR |
IRLB8314PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 970 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.59 EUR |
84+ | 0.86 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
2000+ | 0.5 EUR |
IRLB8721PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
IRLB8721PBF THT N channel transistors
IRLB8721PBF THT N channel transistors
auf Bestellung 1043 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.48 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
IRLB8743PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.3 EUR |
35+ | 2.04 EUR |
94+ | 0.76 EUR |
IRLB8748PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
64+ | 1.12 EUR |
74+ | 0.98 EUR |
88+ | 0.82 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
2000+ | 0.46 EUR |
IRLH5030TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLH5030TRPBF SMD N channel transistors
IRLH5030TRPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHM620TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLHM620TRPBF SMD N channel transistors
IRLHM620TRPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHM630TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLHM630TRPBF SMD N channel transistors
IRLHM630TRPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHS2242TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Power dissipation: 2.1W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Power dissipation: 2.1W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3890 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
171+ | 0.42 EUR |
195+ | 0.37 EUR |
274+ | 0.26 EUR |
329+ | 0.22 EUR |
350+ | 0.2 EUR |
IRLHS6242TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLHS6242TRPBF SMD N channel transistors
IRLHS6242TRPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHS6276TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHS6342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLHS6342TRPBF SMD N channel transistors
IRLHS6342TRPBF SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHS6376TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLHS6376TRPBF SMD N channel transistors
IRLHS6376TRPBF SMD N channel transistors
auf Bestellung 1567 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
96+ | 0.75 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
1000+ | 0.25 EUR |
IRLL014NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1888 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
148+ | 0.48 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2353 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
135+ | 0.53 EUR |
150+ | 0.48 EUR |
173+ | 0.41 EUR |
194+ | 0.37 EUR |
277+ | 0.26 EUR |
293+ | 0.24 EUR |
IRLL024ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLL024ZTRPBF SMD N channel transistors
IRLL024ZTRPBF SMD N channel transistors
auf Bestellung 2391 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
133+ | 0.54 EUR |
141+ | 0.51 EUR |
IRLL2703TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Technology: HEXFET®
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Technology: HEXFET®
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLL2705TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Technology: HEXFET®
Kind of package: reel
Features of semiconductor devices: logic level
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.1W
Drain current: 3.8A
Drain-source voltage: 55V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Technology: HEXFET®
Kind of package: reel
Features of semiconductor devices: logic level
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.1W
Drain current: 3.8A
Drain-source voltage: 55V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2334 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
92+ | 0.78 EUR |
159+ | 0.45 EUR |
168+ | 0.43 EUR |
500+ | 0.41 EUR |
IRLML0030TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8683 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
216+ | 0.33 EUR |
265+ | 0.27 EUR |
329+ | 0.22 EUR |
511+ | 0.14 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
IRLML0040TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55762 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
256+ | 0.28 EUR |
382+ | 0.19 EUR |
447+ | 0.16 EUR |
863+ | 0.083 EUR |
910+ | 0.079 EUR |
IRLML0060TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6936 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
196+ | 0.37 EUR |
286+ | 0.25 EUR |
334+ | 0.21 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
IRLML0100TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5039 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
215+ | 0.33 EUR |
293+ | 0.24 EUR |
334+ | 0.21 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
IRLML2030TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8025 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
266+ | 0.27 EUR |
321+ | 0.22 EUR |
415+ | 0.17 EUR |
493+ | 0.15 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
IRLML2060TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2071 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
368+ | 0.19 EUR |
435+ | 0.16 EUR |
472+ | 0.15 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
6000+ | 0.09 EUR |
IRLML2244TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10115 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
226+ | 0.32 EUR |
253+ | 0.28 EUR |
439+ | 0.16 EUR |
820+ | 0.087 EUR |
878+ | 0.082 EUR |
IRLML2246TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2405 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
309+ | 0.23 EUR |
341+ | 0.21 EUR |
425+ | 0.17 EUR |
470+ | 0.15 EUR |
827+ | 0.087 EUR |
875+ | 0.082 EUR |
IRLML2502TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3390 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
252+ | 0.28 EUR |
371+ | 0.19 EUR |
432+ | 0.17 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
2000+ | 0.099 EUR |
IRLML2803TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9847 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
368+ | 0.19 EUR |
414+ | 0.17 EUR |
620+ | 0.12 EUR |
832+ | 0.086 EUR |
881+ | 0.081 EUR |
1000+ | 0.079 EUR |
IRLML5103TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3094 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
277+ | 0.26 EUR |
368+ | 0.19 EUR |
414+ | 0.17 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
6000+ | 0.092 EUR |
IRLML5203TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4693 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
237+ | 0.3 EUR |
342+ | 0.21 EUR |
399+ | 0.18 EUR |
812+ | 0.088 EUR |
860+ | 0.083 EUR |
6000+ | 0.08 EUR |
IRLML6244TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5450 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
221+ | 0.32 EUR |
280+ | 0.26 EUR |
400+ | 0.18 EUR |
516+ | 0.14 EUR |
589+ | 0.12 EUR |
878+ | 0.082 EUR |
IRLML6246TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4956 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
313+ | 0.23 EUR |
453+ | 0.16 EUR |
523+ | 0.14 EUR |
932+ | 0.077 EUR |
987+ | 0.073 EUR |
IRLML6302PBF |
Hersteller: INFINEON TECHNOLOGIES
IRLML6302PBF SMD P channel transistors
IRLML6302PBF SMD P channel transistors
auf Bestellung 2610 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
208+ | 0.34 EUR |
618+ | 0.12 EUR |
658+ | 0.11 EUR |
IRLML6302TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
IRLML6302TRPBF SMD P channel transistors
IRLML6302TRPBF SMD P channel transistors
auf Bestellung 667 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
178+ | 0.4 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |