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IRFH7440TRPBF IRFH7440TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Mounting: SMD
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 92nC
On-state resistance: 2.4mΩ
Power dissipation: 104W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 3271 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
57+1.27 EUR
65+1.1 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF6644TRPBF IRF6644TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D3B6A2145F1A303005056AB0C4F&compId=irf6644pbf.pdf?ci_sign=9a8b55e72d72f093e7b297faca648d6d18f6ad2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7446TRPBF IRFH7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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IRFR7440TRPBF INFINEON TECHNOLOGIES irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 760A
Produkt ist nicht verfügbar
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IRFR7446TRPBF IRFR7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD1497D1E795EA&compId=IRFR7446TRPBF.pdf?ci_sign=24c156d8292f16630f64213370799026e4835bd9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC69180631E11C&compId=BSC360N15NS3G-DTE.pdf?ci_sign=135a0d3070f5fa4bbd05a46b3c050f04f344d55f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 74W
Drain current: 33A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5D9D5AA51C143&compId=IPN50R2K0CE.pdf?ci_sign=12dd091a324c704a415514a39c8e3353844a7a59 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Mounting: SMD
On-state resistance: 2Ω
Drain current: 2.3A
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-SOT223
Polarisation: unipolar
Gate charge: 6nC
Produkt ist nicht verfügbar
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2ED21824S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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2ED2182S06FXUMA1 2ED2182S06FXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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DD180N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9D461C2B0053D1&compId=DD180N22S.pdf?ci_sign=837b437e4395e4382fc19b1f7d2c8f2007c11717 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
1163+0.061 EUR
1244+0.057 EUR
1303+0.055 EUR
1454+0.049 EUR
1480+0.048 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
944+0.076 EUR
1031+0.069 EUR
1083+0.066 EUR
1202+0.059 EUR
Mindestbestellmenge: 834
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BSC010N04LS6ATMA1 BSC010N04LS6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD7A31E17960C4&compId=BSC010N04LS6ATMA1.pdf?ci_sign=c176625c6ac30d6e40377b1953ac9e5b9dcd35f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 67nC
Produkt ist nicht verfügbar
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AF8E3A772C4749&compId=IKQ50N120CT2.pdf?ci_sign=d9110ec64f0b1c60eb595432e40ae4d175375e74 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 2
Gate charge: 235nC
Produkt ist nicht verfügbar
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IRFH7440TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6
IRFH7440TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Mounting: SMD
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 92nC
On-state resistance: 2.4mΩ
Power dissipation: 104W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 3271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
57+1.27 EUR
65+1.1 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF6644TRPBF pVersion=0046&contRep=ZT&docId=E21F6D3B6A2145F1A303005056AB0C4F&compId=irf6644pbf.pdf?ci_sign=9a8b55e72d72f093e7b297faca648d6d18f6ad2d
IRF6644TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a
IRFH7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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IRFR7440TRPBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 760A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD1497D1E795EA&compId=IRFR7446TRPBF.pdf?ci_sign=24c156d8292f16630f64213370799026e4835bd9
IRFR7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7440TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756
IRFS7440TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC360N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC69180631E11C&compId=BSC360N15NS3G-DTE.pdf?ci_sign=135a0d3070f5fa4bbd05a46b3c050f04f344d55f
BSC360N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 74W; PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 74W
Drain current: 33A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IPN50R2K0CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5D9D5AA51C143&compId=IPN50R2K0CE.pdf?ci_sign=12dd091a324c704a415514a39c8e3353844a7a59
IPN50R2K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Mounting: SMD
On-state resistance: 2Ω
Drain current: 2.3A
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-SOT223
Polarisation: unipolar
Gate charge: 6nC
Produkt ist nicht verfügbar
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2ED21824S06JXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2182S06FXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED2182S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD180N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9D461C2B0053D1&compId=DD180N22S.pdf?ci_sign=837b437e4395e4382fc19b1f7d2c8f2007c11717
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT5404WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1163+0.061 EUR
1244+0.057 EUR
1303+0.055 EUR
1454+0.049 EUR
1480+0.048 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BAT5405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
944+0.076 EUR
1031+0.069 EUR
1083+0.066 EUR
1202+0.059 EUR
Mindestbestellmenge: 834
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BSC010N04LS6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD7A31E17960C4&compId=BSC010N04LS6ATMA1.pdf?ci_sign=c176625c6ac30d6e40377b1953ac9e5b9dcd35f7
BSC010N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 67nC
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IKQ50N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AF8E3A772C4749&compId=IKQ50N120CT2.pdf?ci_sign=d9110ec64f0b1c60eb595432e40ae4d175375e74
IKQ50N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 2
Gate charge: 235nC
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