Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149883) > Seite 2497 nach 2499

Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2490 2492 2493 2494 2495 2496 2497 2498 2499  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDD5BE257718BF&compId=IAUS165N08S5N029.pdf?ci_sign=394e5f40f7fae10bc3b56c2d70e20a1e0fc48e70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
On-state resistance: 2.9mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Pulsed drain current: 660A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT180N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA0C043E4A349E0D6&compId=TT180Nxx.pdf?ci_sign=737a9f2e5eeb660832d4ebd183beaf6f3602be07 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 180A; BG-PB34AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 180A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.1kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B41E3C77CFC469&compId=BSS192PH6327FTSA1.pdf?ci_sign=11076b1b245a34fddb3d33c4ae9cc3628d261909 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BSC036NE7NS3GATMA1 BSC036NE7NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2DBD0047D411C&compId=BSC036NE7NS3G-DTE.pdf?ci_sign=85f97271adbedc9e11128dbeeb2783b753cc9e6c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 1.9mΩ
Power dissipation: 69W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R072M1HXKSA1 IMW65R072M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.56 EUR
10+13.73 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R180P7ATMA1 IPB60R180P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681644F8FF333D6&compId=IPB60R180P7.pdf?ci_sign=21f63003e7f8036ec56aad5bc3ee810eecdc5f34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEF0D85140B3D1&compId=IPZA60R180P7.pdf?ci_sign=1b36fb9135650fbca86aa6ded45a1ec43783c213 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAW60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1943 Stücke:
Lieferzeit 14-21 Tag (e)
90+1.12 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N08NS5ATMA1 BSC040N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E5BB2ADA011C&compId=BSC040N08NS5-DTE.pdf?ci_sign=b51bf54e85ec6f47698e8c2b8ec68aa60b2aa641 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
On-state resistance: 11mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
120+0.6 EUR
151+0.47 EUR
500+0.4 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BSO203PHXUMA1 BSO203PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 3.8mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO301SPHXUMA1 BSO301SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO613SPVGXUMA1 BSO613SPVGXUMA1 INFINEON TECHNOLOGIES Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Case: SO8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -13.8A
Drain current: -3.44A
On-state resistance: 0.13Ω
Power dissipation: 2.5W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR112E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ACF8D6088469&compId=BCR112.pdf?ci_sign=0a7e33b74903e99a5cf3aeb00530958f54a4f330 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L1TRPBF IRF7769L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8FAAC43235EA&compId=IRF7769L1TRPBF.pdf?ci_sign=354300e3cb70052189f18b35e93639ebc08ec4b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGD06N60TATMA1 IGD06N60TATMA1 INFINEON TECHNOLOGIES INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKA06N60TXKSA1 IKA06N60TXKSA1 INFINEON TECHNOLOGIES IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB06N60TATMA1 IKB06N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD06N60RATMA1 AIHD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA4DCD10CAB820&compId=AIHD06N60R.pdf?ci_sign=0a279d67df7c76aa1eaddf5e0c72b6693c0e43bf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD06N60RFATMA1 AIHD06N60RFATMA1 INFINEON TECHNOLOGIES Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G65C5XKSA1 IDW20G65C5XKSA1 INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Case: PG-TO247-3
Mounting: THT
Leakage current: 4.1µA
Max. forward voltage: 1.8V
Load current: 20A
Max. forward impulse current: 87A
Semiconductor structure: single diode
Power dissipation: 112W
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G65C5BXKSA2 IDW20G65C5BXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88EFC9B554AADB3D2&compId=IDW20G65C5B.pdf?ci_sign=f8261d3113854477d52594e18efeccc78209be26 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Case: PG-TO247-3
Mounting: THT
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A x2
Max. forward impulse current: 46A
Semiconductor structure: common cathode; double
Power dissipation: 130W
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIDW20S65C5XKSA1 INFINEON TECHNOLOGIES Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 112W
Case: TO247-3
Mounting: THT
Max. forward voltage: 1.7V
Application: automotive industry
Load current: 20A
Max. forward impulse current: 103A
Semiconductor structure: single diode
Power dissipation: 112W
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB200N25N3GATMA1 IPB200N25N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC2399CBB811C&compId=IPB200N25N3G-DTE.pdf?ci_sign=042d34e0ac3192bf276af7882f73c360549158ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4768PBF IRFP4768PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CC80C8AA211C&compId=BFP193WH6327-dte.pdf?ci_sign=898db4222a12e69935131f5ce32c7e5cd5bcd476 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R041CFDFKSA1 IPW65R041CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16SH6727XTSA1 INFINEON TECHNOLOGIES bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 200mA; 4ns; Ufmax: 1.25V; Ifsm: 4.5A
Application: automotive industry
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Max. load current: 0.2A
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP50R380CEXKSA1 INFINEON TECHNOLOGIES IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
66+1.09 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R380CEXKSA2 IPA50R380CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE3A21EC971CC&compId=IPA50R380CE-DTE.pdf?ci_sign=ae539e39bc820f04d252019de81e3c5f64c466e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
70+1.04 EUR
76+0.95 EUR
91+0.79 EUR
100+0.77 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12KT4RB11BOSA1 INFINEON TECHNOLOGIES Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 1kW
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Collector current: 200A
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Technology: EconoPACK™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRLPBF IRFR2405TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC857SH6327XTSA1 INFINEON TECHNOLOGIES bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 100mA; 250mW; SOT363; double
Semiconductor structure: double
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Application: automotive industry
Current gain: 200
Frequency: 250MHz
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.078 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BCM846SH6327XTSA1 INFINEON TECHNOLOGIES bcm846s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d337210244 Category: NPN SMD transistors
Description: BCM846SH6327XTSA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB026N06NATMA1 IPB026N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D919F0C5211C&compId=IPB026N06N-DTE.pdf?ci_sign=9e67f2cfc0142beb0bd4b1ee285c5ae4db6e555a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Max. load current: 0.2A
Capacity: 2E-09mAh
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV46E6327 BCV46E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869759C991ACA469&compId=BCV46E6327.pdf?ci_sign=3c419a20513a2783dcc9a251db9728b5f8276752 Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4069DPBF IRGP4069DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2226EF78696F2F1A303005056AB0C4F&compId=irgp4069dpbf.pdf?ci_sign=3a3598d05527c19bd2319e95435db04ee838682b Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 76A
Power dissipation: 268W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.6 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.81 EUR
13+5.52 EUR
30+5.41 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R299CPFKSA1 IPW60R299CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R180C7XKSA1 IPW60R180C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954AD1DDD011BF&compId=IPW60R180C7-DTE.pdf?ci_sign=0df0715cc8fabb1c958cc792a364ed24eb6bf983 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R280C6FKSA1 IPW60R280C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952581FF26B1BF&compId=IPW60R280C6-DTE.pdf?ci_sign=e60f596b485e85c4b8207311423c3bc90ab9094f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUS165N08S5N029ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDD5BE257718BF&compId=IAUS165N08S5N029.pdf?ci_sign=394e5f40f7fae10bc3b56c2d70e20a1e0fc48e70
IAUS165N08S5N029ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
On-state resistance: 2.9mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Pulsed drain current: 660A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT180N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA0C043E4A349E0D6&compId=TT180Nxx.pdf?ci_sign=737a9f2e5eeb660832d4ebd183beaf6f3602be07
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 180A; BG-PB34AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 180A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.1kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B41E3C77CFC469&compId=BSS192PH6327FTSA1.pdf?ci_sign=11076b1b245a34fddb3d33c4ae9cc3628d261909
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BSC036NE7NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2DBD0047D411C&compId=BSC036NE7NS3G-DTE.pdf?ci_sign=85f97271adbedc9e11128dbeeb2783b753cc9e6c
BSC036NE7NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59
IPP041N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI041N12N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e
IPI041N12N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC019N03L5SATMA1 Infineon-ISC019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6c201097f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 1.9mΩ
Power dissipation: 69W
Drain current: 100A
Drain-source voltage: 30V
Pulsed drain current: 400A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMW65R072M1HXKSA1 Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482
IMW65R072M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.56 EUR
10+13.73 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R180P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681644F8FF333D6&compId=IPB60R180P7.pdf?ci_sign=21f63003e7f8036ec56aad5bc3ee810eecdc5f34
IPB60R180P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R180P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEF0D85140B3D1&compId=IPZA60R180P7.pdf?ci_sign=1b36fb9135650fbca86aa6ded45a1ec43783c213
IPZA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAW60R180P7SXKSA1 Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1943 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+1.12 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E5BB2ADA011C&compId=BSC040N08NS5-DTE.pdf?ci_sign=b51bf54e85ec6f47698e8c2b8ec68aa60b2aa641
BSC040N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO110N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934
BSO110N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.1A
On-state resistance: 11mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
120+0.6 EUR
151+0.47 EUR
500+0.4 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
BSO203PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9
BSO203PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO033N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9
BSO033N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 3.8mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO301SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205
BSO301SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Case: PG-DSO-8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 8mΩ
Power dissipation: 1.79W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO613SPVGXUMA1 Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c
BSO613SPVGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Case: SO8
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -13.8A
Drain current: -3.44A
On-state resistance: 0.13Ω
Power dissipation: 2.5W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR112E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ACF8D6088469&compId=BCR112.pdf?ci_sign=0a7e33b74903e99a5cf3aeb00530958f54a4f330
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8FAAC43235EA&compId=IRF7769L1TRPBF.pdf?ci_sign=354300e3cb70052189f18b35e93639ebc08ec4b1
IRF7769L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB06N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331
IKB06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA4DCD10CAB820&compId=AIHD06N60R.pdf?ci_sign=0a279d67df7c76aa1eaddf5e0c72b6693c0e43bf
AIHD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD06N60RFATMA1
AIHD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G65C5XKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
IDW20G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO247-3; 112W
Case: PG-TO247-3
Mounting: THT
Leakage current: 4.1µA
Max. forward voltage: 1.8V
Load current: 20A
Max. forward impulse current: 87A
Semiconductor structure: single diode
Power dissipation: 112W
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G65C5BXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88EFC9B554AADB3D2&compId=IDW20G65C5B.pdf?ci_sign=f8261d3113854477d52594e18efeccc78209be26
IDW20G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Case: PG-TO247-3
Mounting: THT
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A x2
Max. forward impulse current: 46A
Semiconductor structure: common cathode; double
Power dissipation: 130W
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIDW20S65C5XKSA1 Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 112W
Case: TO247-3
Mounting: THT
Max. forward voltage: 1.7V
Application: automotive industry
Load current: 20A
Max. forward impulse current: 103A
Semiconductor structure: single diode
Power dissipation: 112W
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB200N25N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC2399CBB811C&compId=IPB200N25N3G-DTE.pdf?ci_sign=042d34e0ac3192bf276af7882f73c360549158ba
IPB200N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4768PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d
IRFP4768PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP193WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CC80C8AA211C&compId=BFP193WH6327-dte.pdf?ci_sign=898db4222a12e69935131f5ce32c7e5cd5bcd476
BFP193WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R041CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95
IPW65R041CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16SH6727XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 200mA; 4ns; Ufmax: 1.25V; Ifsm: 4.5A
Application: automotive industry
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Max. load current: 0.2A
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP50R380CEXKSA1 IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
66+1.09 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R380CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE3A21EC971CC&compId=IPA50R380CE-DTE.pdf?ci_sign=ae539e39bc820f04d252019de81e3c5f64c466e6
IPA50R380CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
70+1.04 EUR
76+0.95 EUR
91+0.79 EUR
100+0.77 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 1kW
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Collector current: 200A
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-4
Technology: EconoPACK™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRLPBF pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2
IRFR2405TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRPBF description pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2
IRFR2405TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC857SH6327XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 100mA; 250mW; SOT363; double
Semiconductor structure: double
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Application: automotive industry
Current gain: 200
Frequency: 250MHz
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.078 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BCM846SH6327XTSA1 bcm846s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d337210244
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: BCM846SH6327XTSA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB026N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D919F0C5211C&compId=IPB026N06N-DTE.pdf?ci_sign=9e67f2cfc0142beb0bd4b1ee285c5ae4db6e555a
IPB026N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Max. load current: 0.2A
Capacity: 2E-09mAh
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV46E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869759C991ACA469&compId=BCV46E6327.pdf?ci_sign=3c419a20513a2783dcc9a251db9728b5f8276752
BCV46E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4069DPBF pVersion=0046&contRep=ZT&docId=E2226EF78696F2F1A303005056AB0C4F&compId=irgp4069dpbf.pdf?ci_sign=3a3598d05527c19bd2319e95435db04ee838682b
IRGP4069DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 76A
Power dissipation: 268W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R041C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443
IPW60R041C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.6 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.81 EUR
13+5.52 EUR
30+5.41 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54
IPW60R070CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R299CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd
IPW60R299CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced
IPW60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462
IPW60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R180C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954AD1DDD011BF&compId=IPW60R180C7-DTE.pdf?ci_sign=0df0715cc8fabb1c958cc792a364ed24eb6bf983
IPW60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R160C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6
IPW60R160C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R280C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952581FF26B1BF&compId=IPW60R280C6-DTE.pdf?ci_sign=e60f596b485e85c4b8207311423c3bc90ab9094f
IPW60R280C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R070P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e
IPW60R070P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037CSFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 249 498 747 996 1245 1494 1743 1992 2241 2490 2492 2493 2494 2495 2496 2497 2498 2499  [ Nächste Seite >> ]