Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152101) > Seite 2497 nach 2536
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF630NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 82W Case: TO220AB Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.3Ω Gate charge: 23.3nC |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRF630NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 82W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SPA17N80C3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 42W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SPB17N80C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 227W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 382 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SPP17N80C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SPW17N80C3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 227W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFR9120NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1653 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRF9540NLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 140W Case: TO262 Mounting: THT Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRF9540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: THT Kind of channel: enhancement Gate charge: 64.7nC Kind of package: tube Technology: HEXFET® |
auf Bestellung 2561 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRF9540NSTRLPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -23A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRLR7843TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 161A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1337 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFP1405PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 310W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFP140NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 27A Power dissipation: 94W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 266 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
KIT_XMC11_BOOT_001 | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0 Type of development kit: ARM Infineon Kind of connector: pin strips; USB B micro Components: XMC1100 Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART Kind of architecture: Cortex M0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
SPD06N80C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.8A Pulsed drain current: 18A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
BSC150N03LDGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 26W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSO150N03MDGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.3A Power dissipation: 1.56W Case: PG-DSO-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BAT62E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW Case: SOT143 Mounting: SMD Type of diode: Schottky rectifying Load current: 20mA Power dissipation: 0.1W Max. off-state voltage: 40V Semiconductor structure: double independent |
auf Bestellung 1167 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BAT6804WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW Power dissipation: 0.15W Case: SOT323 Mounting: SMD Load current: 0.13A Max. off-state voltage: 8V Semiconductor structure: double series Type of diode: Schottky rectifying |
auf Bestellung 2385 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR21271PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 9...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR21271SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR2127PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 12...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR2127SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IGT60R190D1SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A Technology: CoolGaN™ Kind of channel: enhancement Kind of transistor: HEMT Case: PG-HSOF-8-3 Type of transistor: N-JFET Mounting: SMD Polarisation: unipolar Gate-source voltage: -10V Gate charge: 3.2nC Gate current: 7.7mA On-state resistance: 0.19Ω Drain current: 12.5A Pulsed drain current: 23A Power dissipation: 55.5W Drain-source voltage: 600V Kind of package: tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRFP3077PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 200A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 340W Gate charge: 160nC Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IR2117PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Case: DIP8 Type of integrated circuit: driver Mounting: THT Kind of integrated circuit: gate driver; high-side Kind of package: tube Number of channels: 1 Topology: single transistor Operating temperature: -40...125°C Output current: -420...200mA Turn-on time: 125ns Turn-off time: 105ns Power: 1W Supply voltage: 10...20V DC Voltage class: 600V |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR2117SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 125ns Turn-off time: 105ns |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR2111PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 190ns Turn-on time: 830ns Power: 1W |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IR2111SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 190ns Turn-on time: 830ns Power: 625mW |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BC847PNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 250MHz |
auf Bestellung 2015 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Type of transistor: N-MOSFET Case: SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 600V Drain current: 0.12A On-state resistance: 45Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 965 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSD235NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.5W Case: SOT363 Mounting: SMD On-state resistance: 0.35Ω Drain current: 0.95A Gate-source voltage: ±12V Technology: OptiMOS™ 2 Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 554 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSD840NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.5W Case: SOT363 Mounting: SMD On-state resistance: 0.4Ω Drain current: 0.88A Gate-source voltage: ±8V Technology: OptiMOS™ 2 Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 3961 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSS214NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 3366 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL2505PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 104A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: logic level |
auf Bestellung 394 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IRL2505STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 74A Pulsed drain current: 360A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRF7201TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRF7205TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
auf Bestellung 2512 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IPD50N10S3L16ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A Polarisation: unipolar Type of transistor: N-MOSFET Mounting: SMD Drain current: 38A Drain-source voltage: 100V On-state resistance: 15mΩ Gate-source voltage: ±20V Power dissipation: 100W Pulsed drain current: 200A Case: PG-TO252-3-11 Kind of channel: enhancement Technology: OptiMOS® -T |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Power dissipation: 483W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 3 Manufacturer series: H3 |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Power dissipation: 197W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Turn-off time: 440ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ RC Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IKQ40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Power dissipation: 136W Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 331ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 40A Collector-emitter voltage: 1.2kV Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 76ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IKQ40N120CT2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3 Type of transistor: IGBT Power dissipation: 133W Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 379ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 40A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 2 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 285nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 185nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 3 Manufacturer series: H3 |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IKW40N120T2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Power dissipation: 480W Case: TO247-3 Mounting: THT Gate charge: 192nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 165A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Power dissipation: 136W Case: TO247PLUS-4 Mounting: THT Gate charge: 0.19µC Kind of package: tube Turn-off time: 306ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 59ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Power dissipation: 250W Case: TO247PLUS-4 Mounting: THT Gate charge: 285nC Kind of package: tube Turn-off time: 342ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IPD090N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2161 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL2203NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 116A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
PVT422PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω Type of relay: solid state Mounting: THT Case: DIP8 Operating temperature: -40...85°C Switched voltage: 0...400V AC; 0...400V DC Release time: 0.5ms Manufacturer series: PVT422PbF Control current: 2...25mA Contacts configuration: DPST-NO Max. operating current: 350mA On-state resistance: 35Ω Operate time: 2ms Relay variant: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
PVT422SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω Type of relay: solid state Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Switched voltage: 0...400V AC; 0...400V DC Release time: 0.5ms Manufacturer series: PVT422PbF Control current: 2...25mA Contacts configuration: DPST-NO Max. operating current: 350mA On-state resistance: 35Ω Operate time: 2ms Relay variant: MOSFET |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IGB20N65S5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 62.5W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 28A Gate-emitter voltage: ±20V Pulsed collector current: 80A Collector-emitter voltage: 650V Turn-on time: 27ns Gate charge: 48nC Turn-off time: 137ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IHW20N65R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 75W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 97nC Turn-off time: 257ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IKB20N65EH5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 62.5W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 40ns Gate charge: 48nC Turn-off time: 183ns |
auf Bestellung 919 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
SPD50N03S207GBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
auf Bestellung 1413 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSC050N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSC050N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 72A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSZ050N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
BSZ050N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRF630NPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.3Ω
Gate charge: 23.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.3Ω
Gate charge: 23.3nC
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
63+ | 1.15 EUR |
78+ | 0.92 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
IRF630NSTRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
SPA17N80C3 | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.72 EUR |
22+ | 3.3 EUR |
23+ | 3.12 EUR |
SPB17N80C3 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 382 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.72 EUR |
14+ | 5.15 EUR |
15+ | 4.88 EUR |
250+ | 4.69 EUR |
SPP17N80C3 | ![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
42+ | 1.73 EUR |
44+ | 1.64 EUR |
SPW17N80C3 | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.75 EUR |
17+ | 4.33 EUR |
21+ | 3.45 EUR |
22+ | 3.26 EUR |
IRFR9120NTRPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1653 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.5 EUR |
66+ | 1.1 EUR |
130+ | 0.55 EUR |
138+ | 0.52 EUR |
IRF9540NLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO262
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3 EUR |
42+ | 1.72 EUR |
45+ | 1.62 EUR |
IRF9540NPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Kind of package: tube
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Kind of package: tube
Technology: HEXFET®
auf Bestellung 2561 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.87 EUR |
43+ | 1.68 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
500+ | 0.74 EUR |
IRF9540NSTRLPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR7843TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1337 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
81+ | 0.89 EUR |
82+ | 0.87 EUR |
85+ | 0.84 EUR |
IRFP1405PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.63 EUR |
23+ | 3.15 EUR |
24+ | 3.06 EUR |
25+ | 2.9 EUR |
IRFP140NPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
42+ | 1.72 EUR |
64+ | 1.13 EUR |
67+ | 1.07 EUR |
KIT_XMC11_BOOT_001 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Kind of architecture: Cortex M0
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPD06N80C3ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC150N03LDGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSO150N03MDGXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT62E6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 20mA
Power dissipation: 0.1W
Max. off-state voltage: 40V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT143; SMD; 40V; 20mA; 100mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 20mA
Power dissipation: 0.1W
Max. off-state voltage: 40V
Semiconductor structure: double independent
auf Bestellung 1167 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
258+ | 0.28 EUR |
302+ | 0.24 EUR |
363+ | 0.2 EUR |
407+ | 0.18 EUR |
451+ | 0.16 EUR |
BAT6804WH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 8V
Semiconductor structure: double series
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 8V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 8V
Semiconductor structure: double series
Type of diode: Schottky rectifying
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
151+ | 0.47 EUR |
201+ | 0.36 EUR |
213+ | 0.34 EUR |
250+ | 0.33 EUR |
500+ | 0.32 EUR |
IR21271PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
26+ | 2.85 EUR |
27+ | 2.66 EUR |
28+ | 2.6 EUR |
29+ | 2.52 EUR |
30+ | 2.42 EUR |
IR21271SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.92 EUR |
31+ | 2.3 EUR |
IR2127PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.8 EUR |
28+ | 2.56 EUR |
31+ | 2.36 EUR |
IR2127SPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.16 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
IGT60R190D1SATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Technology: CoolGaN™
Kind of channel: enhancement
Kind of transistor: HEMT
Case: PG-HSOF-8-3
Type of transistor: N-JFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10V
Gate charge: 3.2nC
Gate current: 7.7mA
On-state resistance: 0.19Ω
Drain current: 12.5A
Pulsed drain current: 23A
Power dissipation: 55.5W
Drain-source voltage: 600V
Kind of package: tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A
Technology: CoolGaN™
Kind of channel: enhancement
Kind of transistor: HEMT
Case: PG-HSOF-8-3
Type of transistor: N-JFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10V
Gate charge: 3.2nC
Gate current: 7.7mA
On-state resistance: 0.19Ω
Drain current: 12.5A
Pulsed drain current: 23A
Power dissipation: 55.5W
Drain-source voltage: 600V
Kind of package: tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IRFP3077PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 340W
Gate charge: 160nC
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 340W
Gate charge: 160nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2117PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: gate driver; high-side
Kind of package: tube
Number of channels: 1
Topology: single transistor
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-on time: 125ns
Turn-off time: 105ns
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Case: DIP8
Type of integrated circuit: driver
Mounting: THT
Kind of integrated circuit: gate driver; high-side
Kind of package: tube
Number of channels: 1
Topology: single transistor
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-on time: 125ns
Turn-off time: 105ns
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.29 EUR |
25+ | 2.86 EUR |
30+ | 2.39 EUR |
32+ | 2.26 EUR |
250+ | 2.16 EUR |
IR2117SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
50+ | 1.43 EUR |
55+ | 1.3 EUR |
95+ | 1.26 EUR |
IR2111PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 1W
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.22 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
50+ | 2.14 EUR |
IR2111SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 190ns
Turn-on time: 830ns
Power: 625mW
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.42 EUR |
35+ | 2.07 EUR |
37+ | 1.97 EUR |
BC847PNH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
424+ | 0.17 EUR |
544+ | 0.13 EUR |
705+ | 0.1 EUR |
747+ | 0.096 EUR |
1000+ | 0.094 EUR |
BSP125H6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 45Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
99+ | 0.73 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
200+ | 0.43 EUR |
BSD235NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Drain current: 0.95A
Gate-source voltage: ±12V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Drain current: 0.95A
Gate-source voltage: ±12V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
305+ | 0.23 EUR |
371+ | 0.19 EUR |
463+ | 0.15 EUR |
554+ | 0.13 EUR |
BSD840NH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Gate-source voltage: ±8V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.4Ω
Drain current: 0.88A
Gate-source voltage: ±8V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3961 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
231+ | 0.31 EUR |
329+ | 0.22 EUR |
385+ | 0.19 EUR |
794+ | 0.09 EUR |
834+ | 0.086 EUR |
BSS214NWH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3366 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
550+ | 0.13 EUR |
881+ | 0.081 EUR |
1069+ | 0.067 EUR |
1389+ | 0.051 EUR |
1471+ | 0.049 EUR |
3000+ | 0.048 EUR |
IRL2505PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.53 EUR |
35+ | 2.04 EUR |
47+ | 1.53 EUR |
50+ | 1.44 EUR |
IRL2505STRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7201TRPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7205TRPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 2512 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
IPD50N10S3L16ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 38A
Drain-source voltage: 100V
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Case: PG-TO252-3-11
Kind of channel: enhancement
Technology: OptiMOS® -T
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 38A
Drain-source voltage: 100V
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Case: PG-TO252-3-11
Kind of channel: enhancement
Technology: OptiMOS® -T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGW40N120H3FKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.99 EUR |
13+ | 5.51 EUR |
14+ | 5.21 EUR |
30+ | 5.03 EUR |
IHW40N120R5XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.53 EUR |
16+ | 4.75 EUR |
21+ | 3.53 EUR |
22+ | 3.35 EUR |
30+ | 3.22 EUR |
IKQ40N120CH3XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 76ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ40N120CT2XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 75ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 40A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW40N120CS6XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.42 EUR |
16+ | 4.72 EUR |
17+ | 4.46 EUR |
IKW40N120H3FKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.18 EUR |
12+ | 5.99 EUR |
IKW40N120T2FKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 165A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.61 EUR |
10+ | 7.31 EUR |
11+ | 6.91 EUR |
IKY40N120CH3XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 59ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-off time: 306ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 59ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY40N120CS6XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD090N03LGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2161 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
94+ | 0.76 EUR |
101+ | 0.71 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
IRL2203NSTRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PVT422PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Manufacturer series: PVT422PbF
Control current: 2...25mA
Contacts configuration: DPST-NO
Max. operating current: 350mA
On-state resistance: 35Ω
Operate time: 2ms
Relay variant: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Manufacturer series: PVT422PbF
Control current: 2...25mA
Contacts configuration: DPST-NO
Max. operating current: 350mA
On-state resistance: 35Ω
Operate time: 2ms
Relay variant: MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PVT422SPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Manufacturer series: PVT422PbF
Control current: 2...25mA
Contacts configuration: DPST-NO
Max. operating current: 350mA
On-state resistance: 35Ω
Operate time: 2ms
Relay variant: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Manufacturer series: PVT422PbF
Control current: 2...25mA
Contacts configuration: DPST-NO
Max. operating current: 350mA
On-state resistance: 35Ω
Operate time: 2ms
Relay variant: MOSFET
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.9 EUR |
8+ | 9.27 EUR |
9+ | 8.75 EUR |
IGB20N65S5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IHW20N65R5XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKB20N65EH5ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 919 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
25+ | 2.92 EUR |
26+ | 2.76 EUR |
100+ | 2.65 EUR |
SPD50N03S207GBTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1413 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
106+ | 0.67 EUR |
112+ | 0.64 EUR |
116+ | 0.62 EUR |
500+ | 0.6 EUR |
BSC050N03LSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC050N03MSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ050N03LSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ050N03MSGATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH