| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FDP047AN08A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 76 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDP060AN08A0 | ONSEMI |
FDP060AN08A0 THT N channel transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Mounting: THT Type of transistor: N-MOSFET Technology: PowerTrench® Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 0.1µC On-state resistance: 7.5mΩ Gate-source voltage: ±20V Drain current: 92A Drain-source voltage: 150V Power dissipation: 333W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP083N15A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 8.3mΩ Drain current: 83A Gate-source voltage: ±20V Power dissipation: 294W Drain-source voltage: 150V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP18N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 177 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP22N50N | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FDP2532 | ONSEMI |
FDP2532 THT N channel transistors |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDP2614 | ONSEMI |
FDP2614 THT N channel transistors |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDP33N25 | ONSEMI |
FDP33N25 THT N channel transistors |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP3632 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP42AN15A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 24A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDP51N25 | ONSEMI |
FDP51N25 THT N channel transistors |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDP52N20 | ONSEMI |
FDP52N20 THT N channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF12N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Gate-source voltage: ±30V Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 191 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF12N60NZ | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: UniFET™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 167 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF18N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF20N50FT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF20N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 59.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF2D3N10C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 157A Pulsed drain current: 888A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF390N15A | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 10A Pulsed drain current: 60A Power dissipation: 22W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 18.6nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDPF51N25 | ONSEMI |
FDPF51N25 THT N channel transistors |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF55N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.8A Pulsed drain current: 220A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS2572 | ONSEMI |
FDS2572 SMD N channel transistors |
auf Bestellung 2185 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS2582 | ONSEMI |
FDS2582 SMD N channel transistors |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS2734 | ONSEMI |
FDS2734 SMD N channel transistors |
auf Bestellung 2446 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS3590 | ONSEMI |
FDS3590 SMD N channel transistors |
auf Bestellung 470 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS3672 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2456 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4435BZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2131 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4465 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8 Polarisation: unipolar Case: SO8 Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Mounting: SMD Drain current: -13.5A Drain-source voltage: -20V Gate charge: 0.12µC On-state resistance: 10.5mΩ Power dissipation: 2.5W Gate-source voltage: ±8V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS4470 | ONSEMI |
FDS4470 SMD N channel transistors |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4480 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Case: SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2.5W On-state resistance: 21mΩ Drain current: 10.8A Drain-source voltage: 40V Pulsed drain current: 45A Gate charge: 41nC Technology: PowerTrench® Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2328 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4672A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SO8 On-state resistance: 21mΩ Power dissipation: 2.5W Drain current: 11A Gate-source voltage: ±12V Drain-source voltage: 40V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2160 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS4675 | ONSEMI |
FDS4675 SMD P channel transistors |
auf Bestellung 460 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4685 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.2A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Gate charge: 27nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 756 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4935A | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1478 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4935BZ | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4702 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS5351 | ONSEMI |
FDS5351 SMD N channel transistors |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS6375 | ONSEMI |
FDS6375 SMD P channel transistors |
auf Bestellung 1137 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6673BZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2110 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6675BZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 21.8mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6679AZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 14.8mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 272 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6680A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1577 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS6681Z | ONSEMI |
FDS6681Z SMD P channel transistors |
auf Bestellung 1272 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS6690A | ONSEMI |
FDS6690A SMD N channel transistors |
auf Bestellung 2196 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS6898A | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2030 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS6912A | ONSEMI |
FDS6912A Multi channel transistors |
auf Bestellung 1738 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS8447 | ONSEMI |
FDS8447 SMD N channel transistors |
auf Bestellung 1600 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS8880 | ONSEMI |
FDS8880 SMD N channel transistors |
auf Bestellung 297 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS8884 | ONSEMI |
FDS8884 SMD N channel transistors |
auf Bestellung 240 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS89141 | ONSEMI |
FDS89141 Multi channel transistors |
auf Bestellung 1938 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS89161 | ONSEMI |
FDS89161 Multi channel transistors |
auf Bestellung 2192 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS8949 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 600 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9435A | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1256 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9926A | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 739 Stücke: Lieferzeit 7-14 Tag (e) |
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| fds9945 | ONSEMI |
FDS9945 Multi channel transistors |
auf Bestellung 1292 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDS9958 | ONSEMI |
FDS9958 Multi channel transistors |
auf Bestellung 602 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDT1600N10ALZ | ONSEMI |
FDT1600N10ALZ SMD N channel transistors |
auf Bestellung 2577 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDT3612 | ONSEMI |
FDT3612 SMD N channel transistors |
auf Bestellung 2978 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDT458P | ONSEMI |
FDT458P SMD P channel transistors |
auf Bestellung 3074 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDP047AN08A0 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.15 EUR |
| 23+ | 3.15 EUR |
| 50+ | 2.57 EUR |
| FDP060AN08A0 |
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Hersteller: ONSEMI
FDP060AN08A0 THT N channel transistors
FDP060AN08A0 THT N channel transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 19+ | 3.76 EUR |
| 50+ | 2.66 EUR |
| FDP075N15A-F102 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 92A
Drain-source voltage: 150V
Power dissipation: 333W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 92A
Drain-source voltage: 150V
Power dissipation: 333W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.13 EUR |
| 20+ | 3.72 EUR |
| 50+ | 3.29 EUR |
| 100+ | 2.95 EUR |
| 250+ | 2.85 EUR |
| FDP083N15A-F102 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Power dissipation: 294W
Drain-source voltage: 150V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Power dissipation: 294W
Drain-source voltage: 150V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.68 EUR |
| 15+ | 4.78 EUR |
| 18+ | 4.19 EUR |
| 50+ | 3.93 EUR |
| FDP18N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 25+ | 2.86 EUR |
| 31+ | 2.37 EUR |
| FDP22N50N |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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| FDP2532 |
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Hersteller: ONSEMI
FDP2532 THT N channel transistors
FDP2532 THT N channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.89 EUR |
| 23+ | 3.2 EUR |
| 24+ | 3.03 EUR |
| FDP2614 |
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Hersteller: ONSEMI
FDP2614 THT N channel transistors
FDP2614 THT N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.31 EUR |
| 17+ | 4.33 EUR |
| 18+ | 4.09 EUR |
| 250+ | 4.06 EUR |
| FDP33N25 |
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Hersteller: ONSEMI
FDP33N25 THT N channel transistors
FDP33N25 THT N channel transistors
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.5 EUR |
| 44+ | 1.64 EUR |
| 46+ | 1.56 EUR |
| 500+ | 1.52 EUR |
| FDP3632 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.72 EUR |
| 20+ | 3.62 EUR |
| 26+ | 2.77 EUR |
| 50+ | 2.73 EUR |
| FDP42AN15A0 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 28+ | 2.57 EUR |
| 32+ | 2.29 EUR |
| 50+ | 1.84 EUR |
| FDP51N25 |
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Hersteller: ONSEMI
FDP51N25 THT N channel transistors
FDP51N25 THT N channel transistors
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.53 EUR |
| 33+ | 2.22 EUR |
| 35+ | 2.1 EUR |
| FDP52N20 |
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Hersteller: ONSEMI
FDP52N20 THT N channel transistors
FDP52N20 THT N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 37+ | 1.97 EUR |
| 39+ | 1.86 EUR |
| 250+ | 1.79 EUR |
| FDPF12N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.79 EUR |
| 50+ | 1.62 EUR |
| 250+ | 1.52 EUR |
| FDPF12N60NZ |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 40+ | 1.83 EUR |
| 50+ | 1.66 EUR |
| FDPF18N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.19 EUR |
| 27+ | 2.66 EUR |
| FDPF18N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.29 EUR |
| 23+ | 3.19 EUR |
| 27+ | 2.75 EUR |
| 50+ | 2.7 EUR |
| FDPF20N50FT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 23+ | 3.25 EUR |
| 26+ | 2.76 EUR |
| 28+ | 2.59 EUR |
| 50+ | 2.47 EUR |
| FDPF20N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.35 EUR |
| 19+ | 3.96 EUR |
| 21+ | 3.53 EUR |
| 50+ | 2.99 EUR |
| 100+ | 2.83 EUR |
| FDPF2D3N10C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.74 EUR |
| 13+ | 5.51 EUR |
| 14+ | 5.21 EUR |
| 50+ | 5 EUR |
| FDPF390N15A |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 42+ | 1.72 EUR |
| 50+ | 1.46 EUR |
| 53+ | 1.36 EUR |
| FDPF51N25 |
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Hersteller: ONSEMI
FDPF51N25 THT N channel transistors
FDPF51N25 THT N channel transistors
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.29 EUR |
| 41+ | 1.77 EUR |
| 43+ | 1.67 EUR |
| FDPF55N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Pulsed drain current: 220A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Pulsed drain current: 220A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 30+ | 2.39 EUR |
| 50+ | 1.56 EUR |
| 100+ | 1.37 EUR |
| FDS2572 |
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Hersteller: ONSEMI
FDS2572 SMD N channel transistors
FDS2572 SMD N channel transistors
auf Bestellung 2185 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.19 EUR |
| 54+ | 1.33 EUR |
| 57+ | 1.26 EUR |
| 250+ | 1.22 EUR |
| FDS2582 |
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Hersteller: ONSEMI
FDS2582 SMD N channel transistors
FDS2582 SMD N channel transistors
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 79+ | 0.92 EUR |
| 84+ | 0.86 EUR |
| FDS2734 |
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Hersteller: ONSEMI
FDS2734 SMD N channel transistors
FDS2734 SMD N channel transistors
auf Bestellung 2446 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 48+ | 1.52 EUR |
| 50+ | 1.43 EUR |
| 250+ | 1.37 EUR |
| FDS3590 |
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Hersteller: ONSEMI
FDS3590 SMD N channel transistors
FDS3590 SMD N channel transistors
auf Bestellung 470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.55 EUR |
| 108+ | 0.66 EUR |
| 114+ | 0.63 EUR |
| 1000+ | 0.6 EUR |
| FDS3672 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2456 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 56+ | 1.29 EUR |
| 61+ | 1.17 EUR |
| 76+ | 0.94 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.8 EUR |
| FDS4435BZ | ![]() |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2131 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 123+ | 0.58 EUR |
| 153+ | 0.47 EUR |
| 168+ | 0.43 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.36 EUR |
| FDS4465 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -13.5A
Drain-source voltage: -20V
Gate charge: 0.12µC
On-state resistance: 10.5mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -13.5A; 2.5W; SO8
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -13.5A
Drain-source voltage: -20V
Gate charge: 0.12µC
On-state resistance: 10.5mΩ
Power dissipation: 2.5W
Gate-source voltage: ±8V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 10+ | 7.15 EUR |
| 15+ | 4.76 EUR |
| 40+ | 1.79 EUR |
| 100+ | 1.07 EUR |
| FDS4470 | ![]() |
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Hersteller: ONSEMI
FDS4470 SMD N channel transistors
FDS4470 SMD N channel transistors
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 49+ | 1.47 EUR |
| 52+ | 1.39 EUR |
| FDS4480 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2328 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 72+ | 1.01 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.76 EUR |
| FDS4672A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2160 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 74+ | 0.97 EUR |
| 100+ | 0.9 EUR |
| FDS4675 |
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Hersteller: ONSEMI
FDS4675 SMD P channel transistors
FDS4675 SMD P channel transistors
auf Bestellung 460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.92 EUR |
| FDS4685 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 756 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 70+ | 1.03 EUR |
| 85+ | 0.84 EUR |
| 91+ | 0.79 EUR |
| FDS4935A |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1478 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 67+ | 1.08 EUR |
| 89+ | 0.81 EUR |
| 101+ | 0.71 EUR |
| 250+ | 0.65 EUR |
| FDS4935BZ |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4702 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 89+ | 0.81 EUR |
| 106+ | 0.68 EUR |
| 123+ | 0.58 EUR |
| 141+ | 0.51 EUR |
| 250+ | 0.43 EUR |
| FDS5351 |
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Hersteller: ONSEMI
FDS5351 SMD N channel transistors
FDS5351 SMD N channel transistors
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 92+ | 0.77 EUR |
| 1000+ | 0.46 EUR |
| FDS6375 |
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Hersteller: ONSEMI
FDS6375 SMD P channel transistors
FDS6375 SMD P channel transistors
auf Bestellung 1137 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 108+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| FDS6673BZ | ![]() |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2110 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 73+ | 0.99 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.65 EUR |
| FDS6675BZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21.8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 21.8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.72 EUR |
| 123+ | 0.58 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.51 EUR |
| FDS6679AZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 68+ | 1.07 EUR |
| 82+ | 0.88 EUR |
| 95+ | 0.76 EUR |
| 109+ | 0.66 EUR |
| 500+ | 0.61 EUR |
| FDS6680A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1577 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 87+ | 0.82 EUR |
| 99+ | 0.73 EUR |
| 110+ | 0.65 EUR |
| 122+ | 0.59 EUR |
| 250+ | 0.57 EUR |
| FDS6681Z |
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Hersteller: ONSEMI
FDS6681Z SMD P channel transistors
FDS6681Z SMD P channel transistors
auf Bestellung 1272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| 5000+ | 1.12 EUR |
| FDS6690A |
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Hersteller: ONSEMI
FDS6690A SMD N channel transistors
FDS6690A SMD N channel transistors
auf Bestellung 2196 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 0.75 EUR |
| 243+ | 0.29 EUR |
| 258+ | 0.28 EUR |
| FDS6898A |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2030 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 69+ | 1.04 EUR |
| 75+ | 0.95 EUR |
| 93+ | 0.78 EUR |
| 101+ | 0.71 EUR |
| 500+ | 0.69 EUR |
| FDS6912A |
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Hersteller: ONSEMI
FDS6912A Multi channel transistors
FDS6912A Multi channel transistors
auf Bestellung 1738 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.46 EUR |
| 140+ | 0.51 EUR |
| 148+ | 0.48 EUR |
| FDS8447 | ![]() |
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Hersteller: ONSEMI
FDS8447 SMD N channel transistors
FDS8447 SMD N channel transistors
auf Bestellung 1600 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.1 EUR |
| 70+ | 1.03 EUR |
| FDS8880 |
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Hersteller: ONSEMI
FDS8880 SMD N channel transistors
FDS8880 SMD N channel transistors
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
| FDS8884 |
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Hersteller: ONSEMI
FDS8884 SMD N channel transistors
FDS8884 SMD N channel transistors
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.85 EUR |
| 211+ | 0.34 EUR |
| 223+ | 0.32 EUR |
| 2500+ | 0.31 EUR |
| FDS89141 |
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Hersteller: ONSEMI
FDS89141 Multi channel transistors
FDS89141 Multi channel transistors
auf Bestellung 1938 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.85 EUR |
| 29+ | 2.55 EUR |
| 30+ | 2.4 EUR |
| 1000+ | 2.32 EUR |
| FDS89161 |
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Hersteller: ONSEMI
FDS89161 Multi channel transistors
FDS89161 Multi channel transistors
auf Bestellung 2192 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
| 2500+ | 1.2 EUR |
| FDS8949 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 63+ | 1.15 EUR |
| 72+ | 1 EUR |
| 125+ | 0.57 EUR |
| 500+ | 0.47 EUR |
| FDS9435A |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1256 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 99+ | 0.72 EUR |
| 133+ | 0.54 EUR |
| 152+ | 0.47 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.35 EUR |
| FDS9926A |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 739 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 125+ | 0.57 EUR |
| 141+ | 0.51 EUR |
| 184+ | 0.39 EUR |
| 204+ | 0.35 EUR |
| 250+ | 0.31 EUR |
| 500+ | 0.29 EUR |
| fds9945 |
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Hersteller: ONSEMI
FDS9945 Multi channel transistors
FDS9945 Multi channel transistors
auf Bestellung 1292 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| 166+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| FDS9958 |
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Hersteller: ONSEMI
FDS9958 Multi channel transistors
FDS9958 Multi channel transistors
auf Bestellung 602 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.05 EUR |
| 143+ | 0.5 EUR |
| 151+ | 0.48 EUR |
| 1000+ | 0.47 EUR |
| FDT1600N10ALZ |
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Hersteller: ONSEMI
FDT1600N10ALZ SMD N channel transistors
FDT1600N10ALZ SMD N channel transistors
auf Bestellung 2577 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 143+ | 0.5 EUR |
| 152+ | 0.47 EUR |
| 1000+ | 0.45 EUR |
| FDT3612 |
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Hersteller: ONSEMI
FDT3612 SMD N channel transistors
FDT3612 SMD N channel transistors
auf Bestellung 2978 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 174+ | 0.41 EUR |
| 184+ | 0.39 EUR |
| FDT458P |
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Hersteller: ONSEMI
FDT458P SMD P channel transistors
FDT458P SMD P channel transistors
auf Bestellung 3074 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 161+ | 0.45 EUR |
| 170+ | 0.42 EUR |
| 1000+ | 0.41 EUR |










