| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQD13N06LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 28W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2090 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD13N10LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1748 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD17P06TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1988 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD18N20V2TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.75A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD19N10LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.8A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2104 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD3P50TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 760 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD5P20TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1263 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD6N40CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1460 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD7N20LTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.48A Pulsed drain current: 22A Power dissipation: 45W Case: DPAK Gate-source voltage: ±20V On-state resistance: 780mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 9nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2459 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD7P20TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 831 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD8P10TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1218 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP11N40C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP17P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 146 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP27P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -27A Case: TO220AB Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 369 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP34N20 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3 Mounting: THT Gate-source voltage: ±30V Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO220-3 Polarisation: unipolar On-state resistance: 75mΩ Drain current: 20A Power dissipation: 180W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP47P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP4N80 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP6N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 158W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP9N90C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF13N50CF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 52A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF19N20C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF47P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -21.2A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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FQT4N20LTF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Mounting: SMD Gate-source voltage: ±20V Drain-source voltage: 200V Technology: QFET® Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT223 Polarisation: unipolar Gate charge: 5.2nC On-state resistance: 1.4Ω Drain current: 0.68A Power dissipation: 2.2W Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3258 Stücke: Lieferzeit 7-14 Tag (e) |
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FQT7N10LTF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.36A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4705 Stücke: Lieferzeit 7-14 Tag (e) |
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FSA2567MPX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; OUT: 4PDT; 1uA Mounting: SMD Operating temperature: -40...85°C Case: MLP16 Type of integrated circuit: analog switch Quiescent current: 1µA Supply voltage: 1.65...4.3V DC Number of channels: 4 Kind of output: 4PDT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1467 Stücke: Lieferzeit 7-14 Tag (e) |
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| FSA4157AP6X | ONSEMI |
FSA4157AP6X Analog multiplexers and switches |
auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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FSBB30CH60C | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027 Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: SPMEC-027 Output current: 30A Mounting: THT Operating temperature: -40...150°C Number of channels: 6 Power dissipation: 106W Operating voltage: 13.5...16.5/0...400V DC Collector-emitter voltage: 600V Technology: Motion SPM® 3 Topology: IGBT three-phase bridge Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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FSQ0765RSUDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: PWM controller; resonant mode controller Case: TO220-6 Output current: 2.28A Output voltage: 650V Number of channels: 1 Mounting: THT Operating temperature: -25...85°C Operating voltage: 8...19V DC Frequency: 66.7kHz On-state resistance: 1.6Ω Power: 70W Input voltage: 85...265V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 318 Stücke: Lieferzeit 7-14 Tag (e) |
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FSUSB42MUX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Case: MSOP10 Mounting: SMD Operating temperature: -40...85°C Number of channels: 2 Supply voltage: 2.4...4.4V DC Kind of output: DPDT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2078 Stücke: Lieferzeit 7-14 Tag (e) |
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FSV15100V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 100V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 250A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3890 Stücke: Lieferzeit 7-14 Tag (e) |
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FXL4TD245BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 4 Case: DQFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 4 Number of inputs: 4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2035 Stücke: Lieferzeit 7-14 Tag (e) |
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FXL5T244BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Case: DQFN14 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 5 Number of inputs: 5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 71 Stücke: Lieferzeit 7-14 Tag (e) |
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FXMA2102UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Case: UQFN8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 2 Number of inputs: 2 Frequency: 37MHz Integrated circuit features: 5V tolerant on inputs/outputs; open drain output Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1353 Stücke: Lieferzeit 7-14 Tag (e) |
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FXMA2104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Case: MLP12 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Frequency: 26MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3647 Stücke: Lieferzeit 7-14 Tag (e) |
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FXMAR2102UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Case: MLP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 2 Number of inputs: 2 Frequency: 50MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4681 Stücke: Lieferzeit 7-14 Tag (e) |
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| FZT790A | ONSEMI |
FZT790A PNP SMD transistors |
auf Bestellung 2670 Stücke: Lieferzeit 7-14 Tag (e) |
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| GBU6K | ONSEMI |
GBU6K-ONS Flat single phase diode bridge rectif. |
auf Bestellung 797 Stücke: Lieferzeit 7-14 Tag (e) |
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| GBU6M | ONSEMI |
GBU6M-ONS Flat single phase diode bridge rectif. |
auf Bestellung 729 Stücke: Lieferzeit 7-14 Tag (e) |
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| GBU8K | ONSEMI |
GBU8K-ONS Flat single phase diode bridge rectif. |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
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H11A1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: DIP6 CTR@If: 50%@10mA Turn-on time: 2µs Turn-off time: 2µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 656 Stücke: Lieferzeit 7-14 Tag (e) |
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H11AA1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 CTR@If: 20%@10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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H11AA1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: Gull wing 6 CTR@If: 20%@10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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H11AA4SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: PDIP6 Collector-emitter voltage: 100V CTR@If: 100%@10mA Manufacturer series: H11AA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 979 Stücke: Lieferzeit 7-14 Tag (e) |
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H11AV1AM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Turn-off time: 15µs Case: DIP6 Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100-300%@10mA Type of optocoupler: optocoupler Insulation voltage: 4.17kV Mounting: THT Kind of output: transistor Turn-on time: 15µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1667 Stücke: Lieferzeit 7-14 Tag (e) |
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H11AV1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Turn-off time: 15µs Case: DIP6 Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100-300%@10mA Type of optocoupler: optocoupler Insulation voltage: 4.17kV Mounting: THT Kind of output: transistor Turn-on time: 15µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 694 Stücke: Lieferzeit 7-14 Tag (e) |
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| H11B1M | ONSEMI |
H11B1M Optocouplers - analog output |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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H11D1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA Case: DIP6 Turn-on time: 5µs Turn-off time: 5µs Max. off-state voltage: 6V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| H11D1SR2M | ONSEMI |
H11D1SR2M Optocouplers - analog output |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| H11D3M | ONSEMI |
H11D3M Optocouplers - analog output |
auf Bestellung 489 Stücke: Lieferzeit 7-14 Tag (e) |
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| H11F1M | ONSEMI |
H11F1M Optocouplers - analog output |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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H11F3M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM Anzahl je Verpackung: 1 Stücke |
auf Bestellung 821 Stücke: Lieferzeit 7-14 Tag (e) |
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H11G1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV Case: DIP6 Turn-on time: 5µs Collector-emitter voltage: 100V CTR@If: 100%@10mA Turn-off time: 0.1ms Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| H11G2M | ONSEMI |
H11G2M Optocouplers - analog output |
auf Bestellung 338 Stücke: Lieferzeit 7-14 Tag (e) |
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H11L1M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Case: DIP6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2021 Stücke: Lieferzeit 7-14 Tag (e) |
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H11L1SM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 0.85kV; Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 0.85kV Case: Gull wing 6 Manufacturer series: H11LXM Turn-on time: 4µs Turn-off time: 4µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1029 Stücke: Lieferzeit 7-14 Tag (e) |
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H11L1SR2M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 1Mbps; Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Case: Gull wing 6 Transfer rate: 1Mbps Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1540 Stücke: Lieferzeit 7-14 Tag (e) |
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H11L1SR2VM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; 4.17kV; Gull wing 6; H11LXM Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 4.17kV Case: Gull wing 6 Manufacturer series: H11LXM Turn-on time: 4µs Turn-off time: 4µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 927 Stücke: Lieferzeit 7-14 Tag (e) |
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H11L1SVM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Case: PDIP6 Max. off-state voltage: 6V Transfer rate: 1Mbps Manufacturer series: H11L1 Output voltage: 0...16V Turn-on time: 1µs Turn-off time: 1.2µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 604 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQD13N06LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2090 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 97+ | 0.74 EUR |
| 112+ | 0.64 EUR |
| 164+ | 0.44 EUR |
| 173+ | 0.41 EUR |
| 500+ | 0.4 EUR |
| FQD13N10LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1748 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 86+ | 0.84 EUR |
| 96+ | 0.75 EUR |
| 176+ | 0.41 EUR |
| 186+ | 0.38 EUR |
| 1000+ | 0.37 EUR |
| FQD17P06TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1988 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.5 EUR |
| 54+ | 1.33 EUR |
| 59+ | 1.21 EUR |
| 98+ | 0.73 EUR |
| 103+ | 0.69 EUR |
| 500+ | 0.67 EUR |
| FQD18N20V2TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 57+ | 1.26 EUR |
| 79+ | 0.92 EUR |
| 82+ | 0.87 EUR |
| 250+ | 0.84 EUR |
| FQD19N10LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2104 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.53 EUR |
| 58+ | 1.24 EUR |
| 65+ | 1.11 EUR |
| 103+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| FQD3P50TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 760 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.8 EUR |
| 57+ | 1.27 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.92 EUR |
| 250+ | 0.87 EUR |
| FQD5P20TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1263 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| 130+ | 0.55 EUR |
| 138+ | 0.52 EUR |
| 250+ | 0.5 EUR |
| FQD6N40CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 69+ | 1.04 EUR |
| 81+ | 0.89 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.83 EUR |
| 250+ | 0.82 EUR |
| FQD7N20LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.48A
Pulsed drain current: 22A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 780mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.48A
Pulsed drain current: 22A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 780mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.12 EUR |
| 95+ | 0.76 EUR |
| 108+ | 0.67 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| 500+ | 0.45 EUR |
| FQD7P20TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 831 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 73+ | 0.99 EUR |
| 87+ | 0.83 EUR |
| 92+ | 0.78 EUR |
| 250+ | 0.75 EUR |
| FQD8P10TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1218 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 71+ | 1.02 EUR |
| 81+ | 0.89 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| 500+ | 0.45 EUR |
| FQP11N40C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| 30+ | 2.39 EUR |
| 42+ | 1.72 EUR |
| 45+ | 1.62 EUR |
| 500+ | 1.56 EUR |
| FQP17P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 53+ | 1.36 EUR |
| FQP27P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 369 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 44+ | 1.63 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| 50+ | 1.44 EUR |
| FQP34N20 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Mounting: THT
Gate-source voltage: ±30V
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220-3
Polarisation: unipolar
On-state resistance: 75mΩ
Drain current: 20A
Power dissipation: 180W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Mounting: THT
Gate-source voltage: ±30V
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220-3
Polarisation: unipolar
On-state resistance: 75mΩ
Drain current: 20A
Power dissipation: 180W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 8+ | 8.94 EUR |
| 21+ | 3.4 EUR |
| FQP47P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 20+ | 3.7 EUR |
| 21+ | 3.4 EUR |
| 50+ | 2.43 EUR |
| FQP4N80 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 10+ | 7.15 EUR |
| 12+ | 5.96 EUR |
| 33+ | 2.17 EUR |
| 250+ | 1.33 EUR |
| FQP6N80C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.5 EUR |
| 27+ | 2.7 EUR |
| 40+ | 1.82 EUR |
| 42+ | 1.72 EUR |
| 100+ | 1.66 EUR |
| FQP9N90C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.73 EUR |
| 22+ | 3.26 EUR |
| 24+ | 3.09 EUR |
| 100+ | 3 EUR |
| FQPF13N50CF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.89 EUR |
| 22+ | 3.3 EUR |
| 50+ | 2.33 EUR |
| FQPF19N20C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| 40+ | 1.79 EUR |
| 100+ | 1.07 EUR |
| FQPF3N80C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.92 EUR |
| 48+ | 1.52 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| FQPF47P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.79 EUR |
| 22+ | 3.33 EUR |
| 27+ | 2.73 EUR |
| 28+ | 2.59 EUR |
| 100+ | 2.49 EUR |
| FQPF9N90CT |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.06 EUR |
| 19+ | 3.76 EUR |
| 100+ | 3.23 EUR |
| FQT4N20LTF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 200V
Technology: QFET®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT223
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 1.4Ω
Drain current: 0.68A
Power dissipation: 2.2W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 200V
Technology: QFET®
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT223
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 1.4Ω
Drain current: 0.68A
Power dissipation: 2.2W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3258 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 99+ | 0.73 EUR |
| 148+ | 0.48 EUR |
| 157+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| FQT7N10LTF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4705 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 96+ | 0.75 EUR |
| 111+ | 0.65 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| 500+ | 0.41 EUR |
| FSA2567MPX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; OUT: 4PDT; 1uA
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
Type of integrated circuit: analog switch
Quiescent current: 1µA
Supply voltage: 1.65...4.3V DC
Number of channels: 4
Kind of output: 4PDT
Anzahl je Verpackung: 1 Stücke
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; OUT: 4PDT; 1uA
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
Type of integrated circuit: analog switch
Quiescent current: 1µA
Supply voltage: 1.65...4.3V DC
Number of channels: 4
Kind of output: 4PDT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1467 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 100+ | 0.72 EUR |
| 110+ | 0.65 EUR |
| 126+ | 0.57 EUR |
| 132+ | 0.54 EUR |
| FSA4157AP6X |
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Hersteller: ONSEMI
FSA4157AP6X Analog multiplexers and switches
FSA4157AP6X Analog multiplexers and switches
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 309+ | 0.23 EUR |
| 472+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| FSBB30CH60C |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMEC-027
Output current: 30A
Mounting: THT
Operating temperature: -40...150°C
Number of channels: 6
Power dissipation: 106W
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 600V
Technology: Motion SPM® 3
Topology: IGBT three-phase bridge
Anzahl je Verpackung: 1 Stücke
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMEC-027
Output current: 30A
Mounting: THT
Operating temperature: -40...150°C
Number of channels: 6
Power dissipation: 106W
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 600V
Technology: Motion SPM® 3
Topology: IGBT three-phase bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 25.31 EUR |
| 10+ | 25.08 EUR |
| FSQ0765RSUDTU |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Output current: 2.28A
Output voltage: 650V
Number of channels: 1
Mounting: THT
Operating temperature: -25...85°C
Operating voltage: 8...19V DC
Frequency: 66.7kHz
On-state resistance: 1.6Ω
Power: 70W
Input voltage: 85...265V
Anzahl je Verpackung: 1 Stücke
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Output current: 2.28A
Output voltage: 650V
Number of channels: 1
Mounting: THT
Operating temperature: -25...85°C
Operating voltage: 8...19V DC
Frequency: 66.7kHz
On-state resistance: 1.6Ω
Power: 70W
Input voltage: 85...265V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 318 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.77 EUR |
| 29+ | 2.49 EUR |
| 31+ | 2.36 EUR |
| 33+ | 2.2 EUR |
| 100+ | 2.14 EUR |
| FSUSB42MUX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Supply voltage: 2.4...4.4V DC
Kind of output: DPDT
Anzahl je Verpackung: 1 Stücke
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Supply voltage: 2.4...4.4V DC
Kind of output: DPDT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2078 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 154+ | 0.47 EUR |
| 178+ | 0.4 EUR |
| 199+ | 0.36 EUR |
| 309+ | 0.23 EUR |
| 327+ | 0.22 EUR |
| FSV15100V |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3890 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 110+ | 0.65 EUR |
| 131+ | 0.55 EUR |
| 139+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| FXL4TD245BQX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2035 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 59+ | 1.22 EUR |
| 61+ | 1.19 EUR |
| 63+ | 1.14 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.1 EUR |
| FXL5T244BQX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 71 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 71+ | 1 EUR |
| FXMA2102UMX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: UQFN8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 37MHz
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: UQFN8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 37MHz
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1353 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 127+ | 0.56 EUR |
| 148+ | 0.48 EUR |
| 154+ | 0.47 EUR |
| FXMA2104UMX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3647 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 100+ | 0.72 EUR |
| FXMAR2102UMX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4681 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| 82+ | 0.87 EUR |
| 100+ | 0.84 EUR |
| FZT790A |
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Hersteller: ONSEMI
FZT790A PNP SMD transistors
FZT790A PNP SMD transistors
auf Bestellung 2670 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 172+ | 0.42 EUR |
| 182+ | 0.39 EUR |
| GBU6K |
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Hersteller: ONSEMI
GBU6K-ONS Flat single phase diode bridge rectif.
GBU6K-ONS Flat single phase diode bridge rectif.
auf Bestellung 797 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 72+ | 1 EUR |
| 76+ | 0.94 EUR |
| GBU6M |
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Hersteller: ONSEMI
GBU6M-ONS Flat single phase diode bridge rectif.
GBU6M-ONS Flat single phase diode bridge rectif.
auf Bestellung 729 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 69+ | 1.04 EUR |
| 72+ | 1 EUR |
| 500+ | 0.97 EUR |
| GBU8K |
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Hersteller: ONSEMI
GBU8K-ONS Flat single phase diode bridge rectif.
GBU8K-ONS Flat single phase diode bridge rectif.
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.06 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| H11A1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 50%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 50%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 656 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 185+ | 0.39 EUR |
| 209+ | 0.34 EUR |
| 230+ | 0.31 EUR |
| H11AA1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 100+ | 0.72 EUR |
| H11AA1SR2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 73+ | 0.97 EUR |
| H11AA4SR2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Manufacturer series: H11AA
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Manufacturer series: H11AA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 979 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 101+ | 0.71 EUR |
| 119+ | 0.6 EUR |
| 131+ | 0.55 EUR |
| H11AV1AM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1667 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 153+ | 0.47 EUR |
| 170+ | 0.42 EUR |
| 187+ | 0.38 EUR |
| H11AV1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 694 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 112+ | 0.64 EUR |
| 129+ | 0.56 EUR |
| 137+ | 0.52 EUR |
| H11B1M |
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Hersteller: ONSEMI
H11B1M Optocouplers - analog output
H11B1M Optocouplers - analog output
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.88 EUR |
| 203+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| H11D1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.76 EUR |
| 36+ | 1.99 EUR |
| 50+ | 1.43 EUR |
| 97+ | 0.74 EUR |
| 100+ | 0.72 EUR |
| H11D1SR2M |
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Hersteller: ONSEMI
H11D1SR2M Optocouplers - analog output
H11D1SR2M Optocouplers - analog output
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 117+ | 0.61 EUR |
| 123+ | 0.58 EUR |
| 500+ | 0.56 EUR |
| H11D3M |
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Hersteller: ONSEMI
H11D3M Optocouplers - analog output
H11D3M Optocouplers - analog output
auf Bestellung 489 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 113+ | 0.63 EUR |
| 232+ | 0.31 EUR |
| 246+ | 0.29 EUR |
| 500+ | 0.28 EUR |
| H11F1M |
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Hersteller: ONSEMI
H11F1M Optocouplers - analog output
H11F1M Optocouplers - analog output
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.92 EUR |
| 16+ | 4.5 EUR |
| H11F3M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Anzahl je Verpackung: 1 Stücke
auf Bestellung 821 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.96 EUR |
| 23+ | 3.25 EUR |
| 24+ | 3.06 EUR |
| 100+ | 3 EUR |
| 500+ | 2.95 EUR |
| H11G1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Anzahl je Verpackung: 1 Stücke
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| H11G2M |
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Hersteller: ONSEMI
H11G2M Optocouplers - analog output
H11G2M Optocouplers - analog output
auf Bestellung 338 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 135+ | 0.53 EUR |
| 142+ | 0.5 EUR |
| 200+ | 0.48 EUR |
| H11L1M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2021 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 94+ | 0.77 EUR |
| 137+ | 0.52 EUR |
| H11L1SM |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 0.85kV; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 0.85kV
Case: Gull wing 6
Manufacturer series: H11LXM
Turn-on time: 4µs
Turn-off time: 4µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 0.85kV; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 0.85kV
Case: Gull wing 6
Manufacturer series: H11LXM
Turn-on time: 4µs
Turn-off time: 4µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1029 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 141+ | 0.51 EUR |
| 151+ | 0.48 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| 250+ | 0.39 EUR |
| 500+ | 0.38 EUR |
| H11L1SR2M | ![]() |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 1Mbps; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Case: Gull wing 6
Transfer rate: 1Mbps
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 1Mbps; Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Case: Gull wing 6
Transfer rate: 1Mbps
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1540 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 110+ | 0.65 EUR |
| 131+ | 0.55 EUR |
| H11L1SR2VM |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 4.17kV; Gull wing 6; H11LXM
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 4.17kV
Case: Gull wing 6
Manufacturer series: H11LXM
Turn-on time: 4µs
Turn-off time: 4µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 4.17kV; Gull wing 6; H11LXM
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 4.17kV
Case: Gull wing 6
Manufacturer series: H11LXM
Turn-on time: 4µs
Turn-off time: 4µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 927 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 96+ | 0.75 EUR |
| 112+ | 0.64 EUR |
| H11L1SVM |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
Transfer rate: 1Mbps
Manufacturer series: H11L1
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
Transfer rate: 1Mbps
Manufacturer series: H11L1
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 604 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 101+ | 0.71 EUR |
| 113+ | 0.63 EUR |
| 117+ | 0.62 EUR |































