Suchergebnisse für "10N6" : > 60
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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10N65 | LUGUANG ELECTRONIC |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 27.5W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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10N65 | LGE |
Transistor N-Channel MOSFET; Unipolar; 650V; 10A; 0,63Ohm; 27.5W; -55°C ~ 150°C; Substitute: 10N65-LGE; 10N65 T10N65F LGE Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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10N65 | LUGUANG ELECTRONIC |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 27.5W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.63Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 241 Stücke: Lieferzeit 7-14 Tag (e) |
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10N60 |
auf Bestellung 8995 Stücke: Lieferzeit 21-28 Tag (e) |
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AOT10N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 31nC Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT10N60 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AOT10N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 31nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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AOT10N60 | Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) |
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AOT10N65 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhancement Gate charge: 27.7nC |
auf Bestellung 516 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT10N65 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhancement Gate charge: 27.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 516 Stücke: Lieferzeit 7-14 Tag (e) |
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AOT10N65 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AOTF10N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 31.1nC Kind of channel: enhancement |
auf Bestellung 616 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF10N60 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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AOTF10N60 | ALPHA&OMEGA |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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AOTF10N60 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 31.1nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 616 Stücke: Lieferzeit 7-14 Tag (e) |
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AOTF10N65 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhancement Gate charge: 27.7nC |
auf Bestellung 577 Stücke: Lieferzeit 14-21 Tag (e) |
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AOTF10N65 | ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.2A Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhancement Gate charge: 27.7nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 577 Stücke: Lieferzeit 7-14 Tag (e) |
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BXP10N65CF | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A |
auf Bestellung 813 Stücke: Lieferzeit 14-21 Tag (e) |
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BXP10N65CF | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 813 Stücke: Lieferzeit 7-14 Tag (e) |
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F10N60 | WXDH |
Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP F10N60 DONGHAI TDHF10n60 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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FCB110N65F | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB110N65F | onsemi / Fairchild |
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auf Bestellung 5814 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB110N65F | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 2031 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH110N65F-F155 | onsemi / Fairchild |
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auf Bestellung 431 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH110N65F-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 746 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP110N65F | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 791 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0110N60 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS010N6P03 | Amphenol SINE Systems | Standard Circular Connector 6 POS SQUARE FLANGE RECEPT |
auf Bestellung 71 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS010N6P03-PM | Amphenol SINE Systems | Standard Circular Connector 6 POS SQUARE FLANGE RECEPT |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS010N6PHEC03 | Amphenol SINE Systems | Standard Circular Connector 6 POS SQUARE FLANGE RECEPT |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS010N6S03 | Amphenol SINE Systems | Standard Circular Connector 6 POS SQUARE FLANGE RECEPT |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS010N6S03-PM | Amphenol SINE Systems | Standard Circular Connector 6 POS SQUARE FLANGE RECEPT |
auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS010N6SHEC03 | Amphenol SINE Systems | Standard Circular Connector 6 POS SQUARE FLANGE RECEPT |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS610N6PHEC03 | Amphenol SINE Systems | Standard Circular Connector 7 POS PLUG |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS610N6SHEC03 | Amphenol SINE Systems | Standard Circular Connector 7 POS PLUG |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS6BS10N6P03 | Amphenol SINE Systems | Standard Circular Connector 6 POS PLUG |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS6BS10N6S03 | Amphenol SINE Systems | Standard Circular Connector 6 POS PLUG |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS710N6P03 | Amphenol SINE Systems |
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auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS710N6PHEC03 | Amphenol SINE Systems |
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auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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FLS710N6S03 | Amphenol SINE Systems |
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auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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FN2010N-60-24 | Schaffner EMC Inc. |
![]() Packaging: Box Inductance: 1mH Filter Type: Single Phase Mounting Type: Chassis Mount Configuration: Single Stage Operating Temperature: -25°C ~ 100°C Termination Style: Threaded Post (M6) Applications: General Purpose Approval Agency: CE, CSA, ENEC, UR Voltage - Rated DC: 250V Voltage - Rated AC: 250V Frequency - Operating: DC ~ 400Hz Part Status: Active Current: 60 A |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK Type of transistor: IGBT Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 10A |
auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK Type of transistor: IGBT Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 10A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB10N60TATMA1 | Infineon |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 37 Stücke: Lieferzeit 7-14 Tag (e) |
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IGB10N60TATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 110 W |
auf Bestellung 3785 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB10N60TATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 110 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP10N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3 Type of transistor: IGBT Power dissipation: 110W Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 18A |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP10N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3 Type of transistor: IGBT Power dissipation: 110W Case: TO220-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 18A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 297 Stücke: Lieferzeit 7-14 Tag (e) |
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IGP10N60TXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO220-3-1 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 110 W |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA10N65ET6XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Power dissipation: 20W Case: TO220FP Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 27nC Manufacturer series: T6 Gate-emitter voltage: ±20V Collector current: 9A Pulsed collector current: 42.5A |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IKA10N65ET6XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Power dissipation: 20W Case: TO220FP Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 27nC Manufacturer series: T6 Gate-emitter voltage: ±20V Collector current: 9A Pulsed collector current: 42.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK Type of transistor: IGBT Power dissipation: 110W Case: D2PAK Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 18A Pulsed collector current: 30A Turn-on time: 20ns Turn-off time: 253ns |
auf Bestellung 691 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB10N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK Type of transistor: IGBT Power dissipation: 110W Case: D2PAK Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 18A Pulsed collector current: 30A Turn-on time: 20ns Turn-off time: 253ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 691 Stücke: Lieferzeit 7-14 Tag (e) |
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IKD10N60RATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/192ns Switching Energy: 210µJ (on), 380µJ (off) Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
auf Bestellung 2170 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD10N60RATMA1 | Infineon Technologies |
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auf Bestellung 2630 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD10N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 104 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/250ns Switching Energy: 320µJ (on), 170µJ (off) Test Condition: 400V, 10A, 49Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 18.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 79 W |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD10N60RC2ATMA1 | Infineon Technologies |
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auf Bestellung 2032 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD10N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 104 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/250ns Switching Energy: 320µJ (on), 170µJ (off) Test Condition: 400V, 10A, 49Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 18.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 79 W |
auf Bestellung 5824 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD10N60RF | Infineon Technologies |
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auf Bestellung 4989 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD10N60RFATMA1 | Infineon Technologies |
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auf Bestellung 6868 Stücke: Lieferzeit 10-14 Tag (e) |
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10N65 |
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Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 27.5W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 27.5W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
117+ | 0.61 EUR |
131+ | 0.55 EUR |
144+ | 0.50 EUR |
152+ | 0.47 EUR |
10N65 |
Hersteller: LGE
Transistor N-Channel MOSFET; Unipolar; 650V; 10A; 0,63Ohm; 27.5W; -55°C ~ 150°C; Substitute: 10N65-LGE; 10N65 T10N65F LGE
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; Unipolar; 650V; 10A; 0,63Ohm; 27.5W; -55°C ~ 150°C; Substitute: 10N65-LGE; 10N65 T10N65F LGE
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 1.19 EUR |
10N65 |
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Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 27.5W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 27.5W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.63Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 241 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
117+ | 0.61 EUR |
131+ | 0.55 EUR |
144+ | 0.50 EUR |
152+ | 0.47 EUR |
250+ | 0.45 EUR |
AOT10N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
AOT10N60 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 250W; -55°C ~ 150°C; AOT10N60 TAOT10n60
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 250W; -55°C ~ 150°C; AOT10N60 TAOT10n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.82 EUR |
AOT10N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
15+ | 4.76 EUR |
39+ | 1.83 EUR |
AOT10N60 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.92 EUR |
50+ | 1.91 EUR |
100+ | 1.72 EUR |
500+ | 1.37 EUR |
AOT10N65 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
auf Bestellung 516 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.50 EUR |
53+ | 1.36 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
100+ | 1.09 EUR |
500+ | 1.07 EUR |
AOT10N65 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 516 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.50 EUR |
53+ | 1.36 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
100+ | 1.09 EUR |
500+ | 1.07 EUR |
AOT10N65 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 10A; 250W; -55°C ~ 150°C; AOT10N65 TAOT10n65
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 10A; 250W; -55°C ~ 150°C; AOT10N65 TAOT10n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.88 EUR |
AOTF10N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 31.1nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 31.1nC
Kind of channel: enhancement
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.57 EUR |
51+ | 1.42 EUR |
61+ | 1.19 EUR |
64+ | 1.13 EUR |
500+ | 1.09 EUR |
AOTF10N60 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.32 EUR |
AOTF10N60 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 750mOhm; 10A; 50W; -55°C ~ 150°C; AOTF10N60 TAOTF10n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.32 EUR |
AOTF10N60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 31.1nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 31.1nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 616 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.57 EUR |
51+ | 1.42 EUR |
61+ | 1.19 EUR |
64+ | 1.13 EUR |
500+ | 1.09 EUR |
AOTF10N65 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
53+ | 1.36 EUR |
61+ | 1.17 EUR |
65+ | 1.10 EUR |
100+ | 1.09 EUR |
500+ | 1.06 EUR |
AOTF10N65 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.2A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.7nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 577 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
53+ | 1.36 EUR |
61+ | 1.17 EUR |
65+ | 1.10 EUR |
100+ | 1.09 EUR |
500+ | 1.06 EUR |
BXP10N65CF |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
auf Bestellung 813 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
66+ | 1.10 EUR |
74+ | 0.98 EUR |
126+ | 0.57 EUR |
134+ | 0.54 EUR |
BXP10N65CF |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 813 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
66+ | 1.10 EUR |
74+ | 0.98 EUR |
126+ | 0.57 EUR |
134+ | 0.54 EUR |
F10N60 |
Hersteller: WXDH
Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP F10N60 DONGHAI TDHF10n60
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP F10N60 DONGHAI TDHF10n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.07 EUR |
FCB110N65F |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 5.30 EUR |
FCB110N65F |
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Hersteller: onsemi / Fairchild
MOSFETs Power MOSFET, N-Channel, SUPERFE II, FRFET®, 650 V, 35 A, 110 mohm, D2-PAK
MOSFETs Power MOSFET, N-Channel, SUPERFE II, FRFET®, 650 V, 35 A, 110 mohm, D2-PAK
auf Bestellung 5814 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 9.66 EUR |
10+ | 7.18 EUR |
25+ | 6.81 EUR |
100+ | 5.54 EUR |
800+ | 5.47 EUR |
FCB110N65F |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.25 EUR |
10+ | 8.30 EUR |
100+ | 6.07 EUR |
FCH110N65F-F155 |
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Hersteller: onsemi / Fairchild
MOSFETs SuperFET2 650V, 110 mOhm, FRFET
MOSFETs SuperFET2 650V, 110 mOhm, FRFET
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.08 EUR |
10+ | 10.07 EUR |
30+ | 6.81 EUR |
FCH110N65F-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.23 EUR |
30+ | 5.91 EUR |
120+ | 5.38 EUR |
FCP110N65F |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 791 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.64 EUR |
50+ | 5.15 EUR |
FDBL0110N60 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.51 EUR |
10+ | 7.77 EUR |
100+ | 5.65 EUR |
500+ | 4.87 EUR |
FLS010N6P03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 12.21 EUR |
10+ | 10.65 EUR |
100+ | 9.03 EUR |
200+ | 8.64 EUR |
500+ | 8.13 EUR |
1000+ | 7.13 EUR |
2500+ | 6.76 EUR |
FLS010N6P03-PM |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 12.87 EUR |
10+ | 11.11 EUR |
50+ | 10.74 EUR |
100+ | 10.19 EUR |
250+ | 9.12 EUR |
500+ | 8.57 EUR |
1000+ | 7.52 EUR |
FLS010N6PHEC03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.80 EUR |
10+ | 16.65 EUR |
50+ | 15.54 EUR |
100+ | 14.52 EUR |
250+ | 13.24 EUR |
500+ | 12.37 EUR |
1000+ | 11.35 EUR |
FLS010N6S03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 15.31 EUR |
10+ | 13.78 EUR |
50+ | 12.97 EUR |
100+ | 12.32 EUR |
250+ | 10.98 EUR |
500+ | 10.31 EUR |
1000+ | 9.12 EUR |
FLS010N6S03-PM |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 12.11 EUR |
10+ | 10.82 EUR |
50+ | 10.12 EUR |
100+ | 8.85 EUR |
250+ | 8.36 EUR |
500+ | 7.30 EUR |
1000+ | 6.85 EUR |
FLS010N6SHEC03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
Standard Circular Connector 6 POS SQUARE FLANGE RECEPT
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.08 EUR |
10+ | 15.14 EUR |
50+ | 14.94 EUR |
100+ | 14.26 EUR |
250+ | 12.94 EUR |
500+ | 11.60 EUR |
1000+ | 10.84 EUR |
FLS610N6PHEC03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 7 POS PLUG
Standard Circular Connector 7 POS PLUG
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.21 EUR |
10+ | 19.59 EUR |
50+ | 16.63 EUR |
100+ | 13.82 EUR |
200+ | 13.57 EUR |
500+ | 13.41 EUR |
1000+ | 13.22 EUR |
FLS610N6SHEC03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 7 POS PLUG
Standard Circular Connector 7 POS PLUG
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 23.80 EUR |
10+ | 21.95 EUR |
50+ | 18.62 EUR |
100+ | 15.91 EUR |
250+ | 15.42 EUR |
500+ | 15.08 EUR |
1000+ | 14.68 EUR |
FLS6BS10N6P03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS PLUG
Standard Circular Connector 6 POS PLUG
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.19 EUR |
10+ | 17.86 EUR |
50+ | 17.42 EUR |
100+ | 16.47 EUR |
250+ | 15.01 EUR |
500+ | 13.80 EUR |
1000+ | 12.88 EUR |
FLS6BS10N6S03 |
Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS PLUG
Standard Circular Connector 6 POS PLUG
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 24.43 EUR |
10+ | 21.65 EUR |
50+ | 20.22 EUR |
100+ | 18.87 EUR |
250+ | 17.21 EUR |
500+ | 16.10 EUR |
1000+ | 14.78 EUR |
FLS710N6P03 |
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Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS JAM NUT RECEPT
Standard Circular Connector 6 POS JAM NUT RECEPT
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.27 EUR |
10+ | 15.51 EUR |
50+ | 14.82 EUR |
100+ | 13.46 EUR |
250+ | 12.62 EUR |
500+ | 12.09 EUR |
1000+ | 11.11 EUR |
FLS710N6PHEC03 |
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Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS JAM NUT RECEPT
Standard Circular Connector 6 POS JAM NUT RECEPT
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 26.35 EUR |
10+ | 24.34 EUR |
50+ | 20.64 EUR |
100+ | 20.35 EUR |
250+ | 16.77 EUR |
500+ | 16.56 EUR |
1000+ | 16.32 EUR |
FLS710N6S03 |
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Hersteller: Amphenol SINE Systems
Standard Circular Connector 6 POS JAM NUT RECEPT
Standard Circular Connector 6 POS JAM NUT RECEPT
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.76 EUR |
10+ | 17.78 EUR |
50+ | 15.08 EUR |
100+ | 12.04 EUR |
200+ | 11.51 EUR |
500+ | 11.25 EUR |
1000+ | 10.84 EUR |
FN2010N-60-24 |
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Hersteller: Schaffner EMC Inc.
Description: LINE FILTER 250VAC/VDC 60A CHASS
Packaging: Box
Inductance: 1mH
Filter Type: Single Phase
Mounting Type: Chassis Mount
Configuration: Single Stage
Operating Temperature: -25°C ~ 100°C
Termination Style: Threaded Post (M6)
Applications: General Purpose
Approval Agency: CE, CSA, ENEC, UR
Voltage - Rated DC: 250V
Voltage - Rated AC: 250V
Frequency - Operating: DC ~ 400Hz
Part Status: Active
Current: 60 A
Description: LINE FILTER 250VAC/VDC 60A CHASS
Packaging: Box
Inductance: 1mH
Filter Type: Single Phase
Mounting Type: Chassis Mount
Configuration: Single Stage
Operating Temperature: -25°C ~ 100°C
Termination Style: Threaded Post (M6)
Applications: General Purpose
Approval Agency: CE, CSA, ENEC, UR
Voltage - Rated DC: 250V
Voltage - Rated AC: 250V
Frequency - Operating: DC ~ 400Hz
Part Status: Active
Current: 60 A
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 238.52 EUR |
10+ | 194.47 EUR |
25+ | 184.81 EUR |
IGB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
50+ | 1.46 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
250+ | 1.04 EUR |
IGB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
50+ | 1.46 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
250+ | 1.04 EUR |
IGB10N60TATMA1 |
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Hersteller: Infineon
IGBT 600V 20A 110W TO263-3 TrenchStop -40+175°C IGB10N60TATMA1 Infineon Technologies TIGB10n60t
Anzahl je Verpackung: 10 Stücke
IGBT 600V 20A 110W TO263-3 TrenchStop -40+175°C IGB10N60TATMA1 Infineon Technologies TIGB10n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 2.84 EUR |
IGB10N60TATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 3785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.22 EUR |
10+ | 2.05 EUR |
100+ | 1.38 EUR |
500+ | 1.09 EUR |
IGB10N60TATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
Description: IGBT NPT FS 600V 20A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.00 EUR |
2000+ | 0.92 EUR |
3000+ | 0.89 EUR |
IGP10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
46+ | 1.57 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
100+ | 1.26 EUR |
IGP10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.80 EUR |
46+ | 1.57 EUR |
53+ | 1.37 EUR |
55+ | 1.30 EUR |
100+ | 1.26 EUR |
IGP10N60TXKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT FS 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
Description: IGBT NPT FS 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 430µJ
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 110 W
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.48 EUR |
50+ | 1.69 EUR |
100+ | 1.51 EUR |
IKA10N65ET6XKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Manufacturer series: T6
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 42.5A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Manufacturer series: T6
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 42.5A
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
IKA10N65ET6XKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Manufacturer series: T6
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 42.5A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 27nC
Manufacturer series: T6
Gate-emitter voltage: ±20V
Collector current: 9A
Pulsed collector current: 42.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
31+ | 2.30 EUR |
500+ | 1.37 EUR |
IKB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
auf Bestellung 691 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
38+ | 1.89 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
50+ | 1.52 EUR |
IKB10N60TATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
Pulsed collector current: 30A
Turn-on time: 20ns
Turn-off time: 253ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 691 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
38+ | 1.89 EUR |
43+ | 1.67 EUR |
46+ | 1.59 EUR |
50+ | 1.52 EUR |
IKD10N60RATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.20 EUR |
10+ | 2.04 EUR |
100+ | 1.38 EUR |
500+ | 1.09 EUR |
1000+ | 1.00 EUR |
IKD10N60RATMA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 20A
IGBTs IGBT w/ INTG DIODE 600V 20A
auf Bestellung 2630 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 2.89 EUR |
10+ | 1.78 EUR |
100+ | 1.34 EUR |
500+ | 1.05 EUR |
1000+ | 0.97 EUR |
2500+ | 0.91 EUR |
5000+ | 0.85 EUR |
IKD10N60RC2ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.81 EUR |
5000+ | 0.75 EUR |
IKD10N60RC2ATMA1 |
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Hersteller: Infineon Technologies
IGBTs 600 V, 10 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
IGBTs 600 V, 10 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 2032 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 1.12 EUR |
10+ | 1.11 EUR |
100+ | 0.96 EUR |
500+ | 0.85 EUR |
1000+ | 0.80 EUR |
2500+ | 0.75 EUR |
IKD10N60RC2ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
auf Bestellung 5824 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 2.94 EUR |
10+ | 1.86 EUR |
100+ | 1.25 EUR |
500+ | 0.99 EUR |
1000+ | 0.90 EUR |
IKD10N60RF |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop RC
IGBTs IGBT PRODUCTS TrenchStop RC
auf Bestellung 4989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.69 EUR |
10+ | 2.22 EUR |
100+ | 1.72 EUR |
500+ | 1.47 EUR |
1000+ | 1.20 EUR |
2500+ | 1.17 EUR |
5000+ | 1.16 EUR |
IKD10N60RFATMA1 |
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Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 6868 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.73 EUR |
10+ | 2.04 EUR |
100+ | 1.47 EUR |
500+ | 1.18 EUR |
1000+ | 1.10 EUR |
2500+ | 1.06 EUR |
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