Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (127260) > Seite 2117 nach 2121
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FM18W08-SG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC Interface: parallel 8bit Memory: 256kb FRAM Kind of interface: parallel Memory organisation: 32kx8bit Case: SO28 Kind of memory: FRAM Mounting: SMD Supply voltage: 2.7...5.5V DC Access time: 70ns Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FM22L16-55-TG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4MbFRAM; parallel 16bit; 256kx16bit; 2.7÷3.6VDC Interface: parallel 16bit Memory: 4Mb FRAM Kind of interface: parallel Memory organisation: 256kx16bit Case: TSOP44 II Kind of memory: FRAM Mounting: SMD Supply voltage: 2.7...3.6V DC Access time: 55ns Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1350 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLS115D0LDXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Number of channels: 1 Input voltage: 4...45V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| TLS115B0EJXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLS115D0EJXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1EDC60H12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Voltage class: 600/650/1200V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| CY8C4147AZA-S285 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CY8C4147AZA-S285T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CY8C4147AZE-S285T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CY8C4147AZS-S285 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CY8C4147AZS-S285T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CY62167DV30LL-55ZXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating voltage: 2.2...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CY62167DV30LL-55ZXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 55ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IKY75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 256W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Turn-on time: 70ns Turn-off time: 335ns Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IKZA75N120CH7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 1.2kV; 109A; 549W; TO247-4 Type of transistor: IGBT Technology: Field Stop; Trench Collector-emitter voltage: 1.2kV Collector current: 109A Power dissipation: 549W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IPW60R045CPA | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2111STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IKA15N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 14A; 33.3W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 33.3W Case: TO220-3 Mounting: THT Gate charge: 38nC Collector current: 14A Collector-emitter voltage: 650V Pulsed collector current: 45A Turn-off time: 160ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AIGB15N65H5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AIKB15N65DF5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AIKB15N65DH5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPP80R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 11nC Version: ESD |
auf Bestellung 322 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Version: ESD |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP80R280P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.6A Power dissipation: 101W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 36nC Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 17nC Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IPP80R1K4P7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPP80R900P7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 800V; 6A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Drain-source voltage: 800V Drain current: 6A Power dissipation: 45W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 770mΩ Mounting: THT Kind of channel: enhancement Gate charge: 15nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IPP80P03P4L04AKSA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; -30V; -80A; 137W; TO220 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -80A Power dissipation: 137W Case: TO220 Gate-source voltage: -16...5V Kind of channel: enhancement |
auf Bestellung 29740 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPP80P06P H | INFINEON TECHNOLOGIES |
Category: Unclassified Description: SPP80P06P H |
auf Bestellung 573 Stücke: Lieferzeit 14-21 Tag (e) |
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AIGB50N65F5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 305W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 305W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AIGB50N65H5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 305W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 305W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AIKW50N65RF5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 650V; 80A; 250W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 109nC Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IKWH50N65EH7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 650V; 80A; 249W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 249W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 102nC Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4274V50AKSA2 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE42744GV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4274GV10ATMA2 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE42744DV33ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE42744EV50XUMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE42744GV33ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4274DV33ATMA2 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4274GSV25HTMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4274GSV33HTMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| TLE4274GV50ATMA2 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CYT2BL4CAAQ0AZEGST | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CYT2BL4CAAQ0AZSGS | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| ITS5215LCUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IKW30N60T | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Field Stop; 600V; 45A; 187W; TO247-3; Eoff: 0.77mJ Type of transistor: IGBT Case: TO247-3 Mounting: THT Technology: Field Stop; Trench Pulsed collector current: 45A Turn-on time: 23ns Gate-emitter voltage: ±20V Collector current: 45A Turn-off switching energy: 0.77mJ Turn-on switching energy: 0.69mJ Collector-emitter voltage: 600V Power dissipation: 187W Gate charge: 167nC |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW65R070C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 53.5A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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S25FL128LAGMFI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 1208 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAS 70-04W H6327 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching Type of diode: Schottky switching |
auf Bestellung 29680 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138W H6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 280mA; 500mW; SOT323 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 1nC Application: automotive industry |
auf Bestellung 10309 Stücke: Lieferzeit 14-21 Tag (e) |
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| GATELEADL500PB34701XPSA1 | INFINEON TECHNOLOGIES |
Category: Discrete semicon. modules - Unclass.Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IPB042N10N3 G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 778 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS87H6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.26A Power dissipation: 1W Case: SOT89-4 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 736 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRS2334STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFS3006TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel Polarisation: unipolar Technology: HEXFET® Drain current: 293A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Power dissipation: 375W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| CYW89359CUBGT | INFINEON TECHNOLOGIES |
Category: IoT (WiFi/Bluetooth) modules Description: IC: WIFi Network Controller Type of integrated circuit: WIFi Network Controller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IMZA65R007M2HXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IPD350N06L G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 29A Power dissipation: 68W Case: DPAK3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 380W Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement On-state resistance: 1.9mΩ Pulsed drain current: 1kA Gate-source voltage: ±16V |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
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| FM18W08-SG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Interface: parallel 8bit
Memory: 256kb FRAM
Kind of interface: parallel
Memory organisation: 32kx8bit
Case: SO28
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Interface: parallel 8bit
Memory: 256kb FRAM
Kind of interface: parallel
Memory organisation: 32kx8bit
Case: SO28
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM22L16-55-TG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; parallel 16bit; 256kx16bit; 2.7÷3.6VDC
Interface: parallel 16bit
Memory: 4Mb FRAM
Kind of interface: parallel
Memory organisation: 256kx16bit
Case: TSOP44 II
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Access time: 55ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; parallel 16bit; 256kx16bit; 2.7÷3.6VDC
Interface: parallel 16bit
Memory: 4Mb FRAM
Kind of interface: parallel
Memory organisation: 256kx16bit
Case: TSOP44 II
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Access time: 55ns
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1350 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLS115D0LDXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLS115B0EJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLS115D0EJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1EDC60H12AHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZA-S285 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZA-S285T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZE-S285T |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZS-S285 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4147AZS-S285T |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62167DV30LL-55ZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.2÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY62167DV30LL-55ZXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKY75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 335ns
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 335ns
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZA75N120CH7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 109A; 549W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 1.2kV
Collector current: 109A
Power dissipation: 549W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 109A; 549W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 1.2kV
Collector current: 109A
Power dissipation: 549W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R045CPA |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 35.82 EUR |
| 5+ | 35.19 EUR |
| 9+ | 34.08 EUR |
| 20+ | 30 EUR |
| IR2111STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKA15N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 14A; 33.3W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 33.3W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Collector current: 14A
Collector-emitter voltage: 650V
Pulsed collector current: 45A
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 14A; 33.3W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 33.3W
Case: TO220-3
Mounting: THT
Gate charge: 38nC
Collector current: 14A
Collector-emitter voltage: 650V
Pulsed collector current: 45A
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIGB15N65H5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIKB15N65DF5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIKB15N65DH5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP80R1K2P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 11nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 11nC
Version: ESD
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.14 EUR |
| 48+ | 1.78 EUR |
| 50+ | 1.71 EUR |
| 54+ | 1.58 EUR |
| 150+ | 1.54 EUR |
| IPP80R360P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| IPP80R280P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80R750P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80R1K4P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP80R900P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 770mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 15nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 800V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 770mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 15nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP80P03P4L04AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -80A; 137W; TO220
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -80A
Power dissipation: 137W
Case: TO220
Gate-source voltage: -16...5V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -80A; 137W; TO220
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -80A
Power dissipation: 137W
Case: TO220
Gate-source voltage: -16...5V
Kind of channel: enhancement
auf Bestellung 29740 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.99 EUR |
| SPP80P06P H |
auf Bestellung 573 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 5.18 EUR |
| 30+ | 4.51 EUR |
| 50+ | 4.38 EUR |
| 100+ | 4.27 EUR |
| 200+ | 3.81 EUR |
| AIGB50N65F5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIGB50N65H5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 305W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 305W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIKW50N65RF5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 109nC
Technology: Field Stop; Trench
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 109nC
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKWH50N65EH7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 249W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 249W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 102nC
Technology: Field Stop; Trench
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 249W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 249W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 102nC
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274V50AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42744GV50ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274GV10ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42744DV33ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42744EV50XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE42744GV33ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274DV33ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274GSV25HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274GSV33HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274GV50ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYT2BL4CAAQ0AZEGST |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYT2BL4CAAQ0AZSGS |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 1190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ITS5215LCUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKW30N60T |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 45A; 187W; TO247-3; Eoff: 0.77mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Technology: Field Stop; Trench
Pulsed collector current: 45A
Turn-on time: 23ns
Gate-emitter voltage: ±20V
Collector current: 45A
Turn-off switching energy: 0.77mJ
Turn-on switching energy: 0.69mJ
Collector-emitter voltage: 600V
Power dissipation: 187W
Gate charge: 167nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 45A; 187W; TO247-3; Eoff: 0.77mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Technology: Field Stop; Trench
Pulsed collector current: 45A
Turn-on time: 23ns
Gate-emitter voltage: ±20V
Collector current: 45A
Turn-off switching energy: 0.77mJ
Turn-on switching energy: 0.69mJ
Collector-emitter voltage: 600V
Power dissipation: 187W
Gate charge: 167nC
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 6.69 EUR |
| 30+ | 5.85 EUR |
| 50+ | 5.69 EUR |
| 100+ | 5.57 EUR |
| 200+ | 4.95 EUR |
| IPW65R070C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128LAGMFI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1208 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.43 EUR |
| 20+ | 4.47 EUR |
| 25+ | 4.22 EUR |
| 50+ | 4.07 EUR |
| 100+ | 3.95 EUR |
| BAS 70-04W H6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
auf Bestellung 29680 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 425+ | 0.24 EUR |
| 500+ | 0.21 EUR |
| 4000+ | 0.2 EUR |
| BSS138W H6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 280mA; 500mW; SOT323
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 280mA; 500mW; SOT323
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Application: automotive industry
auf Bestellung 10309 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 589+ | 0.14 EUR |
| 658+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 4000+ | 0.11 EUR |
| 10000+ | 0.11 EUR |
| GATELEADL500PB34701XPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB042N10N3 G |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 1.99 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.75 EUR |
| BSS87H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 736 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 160+ | 0.54 EUR |
| 253+ | 0.33 EUR |
| 286+ | 0.3 EUR |
| 296+ | 0.29 EUR |
| 500+ | 0.25 EUR |
| IRS2334STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3006TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 293A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Power dissipation: 375W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 293A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Power dissipation: 375W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYW89359CUBGT |
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: IC: WIFi Network Controller
Type of integrated circuit: WIFi Network Controller
Category: IoT (WiFi/Bluetooth) modules
Description: IC: WIFi Network Controller
Type of integrated circuit: WIFi Network Controller
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMZA65R007M2HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD350N06L G |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 68W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 68W
Case: DPAK3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.98 EUR |
| 300+ | 0.89 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.77 EUR |
| 4000+ | 0.76 EUR |
| IRLS3036TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Pulsed drain current: 1kA
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Pulsed drain current: 1kA
Gate-source voltage: ±16V
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.12 EUR |
| 25+ | 3.4 EUR |















