Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128247) > Seite 2118 nach 2138
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AIGB40N65H5ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIKB40N65DF5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AIKB40N65DH5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKFW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKFW40N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Polarisation: unipolar Technology: CoolMOS™ CE Drain current: 4.8A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.5Ω Pulsed drain current: 24A Power dissipation: 57W Gate charge: 18.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFS3004TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 400A Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IKW30N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 94W Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Pulsed collector current: 90A Turn-on time: 31ns Turn-off time: 209ns Gate-emitter voltage: ±20V Collector current: 35A Manufacturer series: H5 Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N65EL5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 114W Case: TO247-3 Mounting: THT Gate charge: 168nC Kind of package: tube Pulsed collector current: 120A Turn-on time: 44ns Turn-off time: 359ns Gate-emitter voltage: ±20V Collector current: 62A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N65WR5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 75W Case: TO247-3 Mounting: THT Gate charge: 155nC Kind of package: tube Pulsed collector current: 90A Turn-on time: 51ns Turn-off time: 376ns Gate-emitter voltage: ±20V Collector current: 30A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY8C4013SXI-411T | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller Type of integrated circuit: microcontroller |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSP50H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IQE006NE2LM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IQE006NE2LM5CGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IQE006NE2LM5SCATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IKN01N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FM25V20A-DGQ | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Interface: SPI Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: DFN8 Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V20A-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Interface: SPI Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: DFN8 Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: FRAM memory Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V20A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 2Mb FRAM Interface: SPI Memory organisation: 256kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FM25V20A-PG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 795 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FM25V01A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 128kb FRAM Interface: SPI Memory organisation: 16kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FM25V02A-DGQ | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FM25V10-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFB7734PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 183A Power dissipation: 290W Case: TO220AB On-state resistance: 2.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IMT65R022M1HXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPW65R022CFD7AXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPA60R280P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP Type of transistor: N-MOSFET On-state resistance: 214mΩ Mounting: THT Power dissipation: 24W Gate charge: 18nC Polarisation: unipolar Drain current: 12A Kind of channel: enhancement Drain-source voltage: 600V Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP80R450P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.1A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 29A Version: ESD |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IAUC70N08S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Case: PG-TDSON-8 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 280A Power dissipation: 83W Technology: OptiMOS™ 5 On-state resistance: 7.4mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPTC011N08NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPTG011N08NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IDH04SG60CXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA Max. forward impulse current: 18A Max. forward voltage: 2.3V Technology: CoolSiC™; SiC Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Leakage current: 25µA Case: PG-TO220-2 Type of diode: Schottky rectifying Mounting: THT |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFI1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP Polarisation: unipolar Technology: HEXFET® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220FP On-state resistance: 36mΩ Mounting: THT Power dissipation: 45W Gate charge: 80nC |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 250A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB52N15DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB7534PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 186nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Technology: HEXFET® |
auf Bestellung 629 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDP30E120XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube Max. off-state voltage: 1.2kV Load current: 30A Case: TO220-2 Features of semiconductor devices: fast switching Kind of package: tube Semiconductor structure: single diode Type of diode: rectifying Mounting: THT |
auf Bestellung 538 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDP18E120XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 18A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDV15E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube Type of diode: rectifying Case: TO220FP-2 Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 100A Kind of package: tube |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDW15E65D2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube Type of diode: rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 100A Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDP15E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns Mounting: THT Max. forward impulse current: 100A Features of semiconductor devices: fast switching Max. off-state voltage: 650V Load current: 15A Kind of package: tube Semiconductor structure: single diode Case: TO220-2 Type of diode: rectifying Reverse recovery time: 47ns |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDP40E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 250A Kind of package: tube Reverse recovery time: 36ns |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IDV08E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns Type of diode: rectifying Case: TO220FP-2 Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 40ns |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS140WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW Mounting: SMD Max. forward impulse current: 0.2A Max. forward voltage: 1V Power dissipation: 0.25W Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Case: SOD323 Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 4DIR0400HXUMA1 | INFINEON TECHNOLOGIES |
Category: Optocouplers - Unclassified Description: 4DIR0400HXUMA1 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 4DIR0401HXUMA1 | INFINEON TECHNOLOGIES |
Category: Optocouplers - Unclassified Description: 4DIR0401HXUMA1 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPG20N10S4L22AATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPG20N10S4L22ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPB35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPB35N10S3L26ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ISC035N10NM5LF2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BGA614H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TT330N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 10kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TD330N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 12.5kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 330A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| T1330N22TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 2.6kA; 1.33kA; Igt: 250mA Max. off-state voltage: 2.2kV Load current: 1.33kA Case: TO200AC Max. forward impulse current: 26.5kA Gate current: 250mA Mounting: Press-Pack Features of semiconductor devices: phase control thyristor (PCT) Body dimensions: Ø75/Ø50mm Max. load current: 2.6kA Kind of package: in-tray Type of thyristor: hockey-puck |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TD330N16AOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode Type of semiconductor module: diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TD330N16KOFTIMHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 330A; Ufmax: 1.28V; Ifsm: 12.5kA Type of semiconductor module: diode-thyristor Max. off-state voltage: 1.6kV Load current: 330A Max. forward voltage: 1.28V Max. forward impulse current: 12.5kA Gate current: 200mA Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| TD330N18AOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor Type of semiconductor module: thyristor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| S29CD016J0MQFM010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: CFI; parallel burst Operating voltage: 2.5...2.75V Operating frequency: 56MHz Case: PQFP80 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 132 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BCW68FE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AIGB40N65H5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIKB40N65DF5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIKB40N65DH5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKFW40N65DH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKFW40N65ES5XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD50R500CEAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Pulsed drain current: 24A
Power dissipation: 57W
Gate charge: 18.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: CoolMOS™ CE
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Pulsed drain current: 24A
Power dissipation: 57W
Gate charge: 18.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3004TRL7PP |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKW30N65H5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Manufacturer series: H5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Manufacturer series: H5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N65EL5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N65WR5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4013SXI-411T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSP50H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQE006NE2LM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQE006NE2LM5CGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IQE006NE2LM5SCATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKN01N60RC2ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-DGQ |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-DG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Interface: SPI
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 2Mb FRAM
Interface: SPI
Memory organisation: 256kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 2Mb FRAM
Interface: SPI
Memory organisation: 256kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-PG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 795 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25V01A-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 128kb FRAM
Interface: SPI
Memory organisation: 16kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| FM25V02A-DGQ |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V10-DGTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFB7734PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IMT65R022M1HXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW65R022CFD7AXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R280P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 214mΩ
Mounting: THT
Power dissipation: 24W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
On-state resistance: 214mΩ
Mounting: THT
Power dissipation: 24W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 600V
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP80R450P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 29A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 29A
Version: ESD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| IAUC70N08S5N074ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 280A
Power dissipation: 83W
Technology: OptiMOS™ 5
On-state resistance: 7.4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 280A
Power dissipation: 83W
Technology: OptiMOS™ 5
On-state resistance: 7.4mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTC011N08NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPTG011N08NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDH04SG60CXKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA
Max. forward impulse current: 18A
Max. forward voltage: 2.3V
Technology: CoolSiC™; SiC
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Leakage current: 25µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 4A; PG-TO220-2; Ir: 25uA
Max. forward impulse current: 18A
Max. forward voltage: 2.3V
Technology: CoolSiC™; SiC
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Leakage current: 25µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFI1310NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Polarisation: unipolar
Technology: HEXFET®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 36mΩ
Mounting: THT
Power dissipation: 45W
Gate charge: 80nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Polarisation: unipolar
Technology: HEXFET®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 36mΩ
Mounting: THT
Power dissipation: 45W
Gate charge: 80nC
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7437PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB52N15DPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB7534PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP30E120XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220-2
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; TO220-2; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Case: TO220-2
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: THT
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP18E120XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 18A; TO220-2; tube
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
| IDV15E65D2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220FP-2; tube
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| IDW15E65D2FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; Ifsm: 100A; TO247-3; tube
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 100A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP15E65D2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns
Mounting: THT
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: rectifying
Reverse recovery time: 47ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; Ifsm: 100A; TO220-2; tube; 47ns
Mounting: THT
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Max. off-state voltage: 650V
Load current: 15A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220-2
Type of diode: rectifying
Reverse recovery time: 47ns
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
| IDP40E65D2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 36ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; Ifsm: 250A; TO220-2; tube; 36ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 36ns
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| IDV08E65D2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 8A; Ifsm: 60A; TO220FP-2; tube; 40ns
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 40ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS140WE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 4DIR0400HXUMA1 |
|
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| 4DIR0401HXUMA1 |
|
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| IPG20N10S4L22AATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPG20N10S4L22ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB35N10S3L26ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IPB35N10S3L26ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| ISC035N10NM5LF2ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BGA614H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| TT330N16KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| TD330N16KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T1330N22TOFVTXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 2.6kA; 1.33kA; Igt: 250mA
Max. off-state voltage: 2.2kV
Load current: 1.33kA
Case: TO200AC
Max. forward impulse current: 26.5kA
Gate current: 250mA
Mounting: Press-Pack
Features of semiconductor devices: phase control thyristor (PCT)
Body dimensions: Ø75/Ø50mm
Max. load current: 2.6kA
Kind of package: in-tray
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 2.6kA; 1.33kA; Igt: 250mA
Max. off-state voltage: 2.2kV
Load current: 1.33kA
Case: TO200AC
Max. forward impulse current: 26.5kA
Gate current: 250mA
Mounting: Press-Pack
Features of semiconductor devices: phase control thyristor (PCT)
Body dimensions: Ø75/Ø50mm
Max. load current: 2.6kA
Kind of package: in-tray
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TD330N16AOFHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TD330N16KOFTIMHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; Ufmax: 1.28V; Ifsm: 12.5kA
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.6kV
Load current: 330A
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; Ufmax: 1.28V; Ifsm: 12.5kA
Type of semiconductor module: diode-thyristor
Max. off-state voltage: 1.6kV
Load current: 330A
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| TD330N18AOFHPSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor
Type of semiconductor module: thyristor
Category: Thyristor modules
Description: Module: thyristor
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| S29CD016J0MQFM010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 132 Stücke
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Stück im Wert von UAH
| BCW68FE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
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