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IRFB4310ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA BTS5180-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1280 Stücke:
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66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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BSS139IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3805STRLPBF INFINEON TECHNOLOGIES irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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IRF3709ZSTRRPBF INFINEON TECHNOLOGIES irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 87A; 79W; D2PAK; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 17nC
auf Bestellung 800 Stücke:
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800+1 EUR
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IR2010STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 995 Stücke:
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22+3.3 EUR
25+2.95 EUR
26+2.79 EUR
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IR2010SPBF IR2010SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
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IPP60R360P7XKSA1 IPP60R360P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA94E7C0F02143&compId=IPP60R360P7.pdf?ci_sign=0b12d4d4fd5f2cf02bb1bb741529ca54afdbe158 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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KP236-PS2GO-KIT KP236-PS2GO-KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1100; prototype board
Kind of connector: pin strips; USB micro
Kit contents: prototype board
Application: for pressure sensors
Kind of architecture: Cortex M0
Type of development kit: ARM Infineon
Family: XMC1100
Components: XMC1100; XMC4200
Number of add-on connectors: 1
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.09 EUR
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD1B7D4D39B8BF&compId=IPDD60R125G7.pdf?ci_sign=7ebc21da93799da986dcb0eebb06c33188e05b45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-HDSOP-10-1
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Gate charge: 27nC
On-state resistance: 0.125Ω
Pulsed drain current: 54A
Gate-source voltage: ±20V
Power dissipation: 120W
auf Bestellung 47 Stücke:
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16+4.69 EUR
18+4.16 EUR
19+3.93 EUR
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CY8C5888FNI-LP214T INFINEON TECHNOLOGIES Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Category: Unclassified
Description: CY8C5888FNI-LP214T
auf Bestellung 2000 Stücke:
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2000+32.1 EUR
Mindestbestellmenge: 2000
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IRFR2905ZTRPBF IRFR2905ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4FF090C2C8DD820&compId=IRFx2905ZPBF.pdf?ci_sign=3b07f6054abebbd0a9725d152405263260ab9c43 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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AUIRFR2905ZTRL INFINEON TECHNOLOGIES auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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3000+1.6 EUR
Mindestbestellmenge: 3000
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IR2130STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IR2132JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
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500+5.95 EUR
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IRS2001STRPBF INFINEON TECHNOLOGIES irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+0.92 EUR
Mindestbestellmenge: 2500
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IRGP4062DPBF IRGP4062DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7D48F1A6F5005056AB5A8F&compId=irgb4062dpbf.pdf?ci_sign=246cfad20b71e3dfbeb2b9e398a40a394810e95e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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S25FL128SAGMFBR00 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL128SAGMFBR03 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BSZ086P03NS3EGATMA BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9292ADCD3BB1CC&compId=BSZ086P03NS3EGATMA-DTE.pdf?ci_sign=69c493c9f9525a42e6ae68c562c52c19e9d62410 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 69W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E28059699C11C&compId=BSZ088N03MSG-DTE.pdf?ci_sign=11629a90dffdab400bce748e67528423bd3ce995 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
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BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1FC933E9011C&compId=BSZ084N08NS5-DTE.pdf?ci_sign=3fec2ef640d7d5459287142b23f75e308e399b08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 63W
Polarisation: unipolar
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9293DA246CB1CC&compId=BSZ086P03NS3GATMA1-dte.pdf?ci_sign=d98c1dc5ac6383467a461262b29e3d9e0acd7ad7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E269AB1C6011C&compId=BSZ088N03LSG-DTE.pdf?ci_sign=3b3d13f98dd8170a53c03e2f4d12325b92340d2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Kind of package: in-tray
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CY7C1011G30-12ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: in-tray
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CY7C1011G30-12ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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XMC1202Q024X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Interface: GPIO; USIC x2
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
Memory: 16kB SRAM; 32kB FLASH
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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IDK02G65C5XTMA1 IDK02G65C5XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9BD43B3D72FA8&compId=IDK02G65C5-DTE.pdf?ci_sign=54bd06edd48361545afc753e1485c8d06016913e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
131+0.55 EUR
137+0.52 EUR
144+0.5 EUR
Mindestbestellmenge: 125
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TLE6225GXUMA1 INFINEON TECHNOLOGIES TLE6225G.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.29 EUR
Mindestbestellmenge: 1000
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BCV62CE6327 BCV62CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6312 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
248+0.29 EUR
368+0.19 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEDFAB46113D7&compId=IKCM20L60GA.pdf?ci_sign=dd653c89070a6b043f926e264dac78d345231d50 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Case: PG-MDIP24
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -20...20A
Type of integrated circuit: driver
Power dissipation: 29.2W
Produkt ist nicht verfügbar
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CY7C64225-28PVXC INFINEON TECHNOLOGIES CY7C64225.PDF Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
47+3.95 EUR
141+3.55 EUR
Mindestbestellmenge: 47
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BSZ900N20NS3GATMA1 BSZ900N20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC5E42ECBDA11C&compId=BSZ900N20NS3G-DTE.pdf?ci_sign=4939ebdb5f4f264dea8ce9a94d7bf6e403eed9d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 15.2A
Power dissipation: 62.5W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
46+1.59 EUR
55+1.32 EUR
58+1.24 EUR
250+1.23 EUR
500+1.2 EUR
Mindestbestellmenge: 38
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BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3D3610F9C11C&compId=BSZ900N15NS3G-DTE.pdf?ci_sign=9fdf07bf8b46a4af954041b1051c6e9372bea50e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3058 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
65+1.12 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 50
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BCR116E6433HTMA1 INFINEON TECHNOLOGIES bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.049 EUR
Mindestbestellmenge: 10000
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IMZA65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Case: TO247-4
Produkt ist nicht verfügbar
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IR2233SPBF IR2233SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.6W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233PBF IR2233PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.5W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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BSZ0909NSATMA1 BSZ0909NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E2F5FD44F811C&compId=BSZ0909NS-DTE.pdf?ci_sign=2f08ddbecbf859e189004fb9543e95868a6b9f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 32A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 32A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
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IRF7807ZTRPBF IRF7807ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AB4E5872EEF1A303005056AB0C4F&compId=irf7807zpbf.pdf?ci_sign=c1df805b56b2417932bb256a741c2f70a29cea6c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7807VTRPBF IRF7807VTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AB2C875C09F1A303005056AB0C4F&compId=irf7807vpbf.pdf?ci_sign=78f9e59fb9aca18cea2e3a1094d175afcb9560cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP50R140CPXKSA1 IPP50R140CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE58ABB53C51CC&compId=IPP50R140CP-DTE.pdf?ci_sign=4478e3522ad0dd65fa628814d240f33339433943 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ040N04LSGATMA1 BSZ040N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E052B42C0811C&compId=BSZ040N04LSG-DTE.pdf?ci_sign=086584638ccfdd5ed44256d041035edc91b171d2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1947 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
65+1.1 EUR
92+0.78 EUR
98+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 54
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BSP135H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.99 EUR
Mindestbestellmenge: 1000
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BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD599DAD3C5E28&compId=BGT24LTR11.pdf?ci_sign=affc801d3381666d890169462b510c4449fcfc61 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.2...3.4V DC
DC supply current: 45mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 10dB
Produkt ist nicht verfügbar
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ESD24VS2UE6327HTSA1 ESD24VS2UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD9299A9216259&compId=ESD24VS2UE6327.pdf?ci_sign=11ffaf7a1104f12a35260642dc6d98c4cfd7c8ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 230W; 32V; unidirectional; SOT23; reel,tape
Mounting: SMD
Breakdown voltage: 32V
Kind of package: reel; tape
Type of diode: TVS
Case: SOT23
Max. off-state voltage: 24V
Peak pulse power dissipation: 230W
Semiconductor structure: unidirectional
auf Bestellung 1509 Stücke:
Lieferzeit 14-21 Tag (e)
156+0.46 EUR
204+0.35 EUR
257+0.28 EUR
298+0.24 EUR
343+0.21 EUR
491+0.15 EUR
521+0.14 EUR
Mindestbestellmenge: 156
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IPB65R115CFD7AATMA1 INFINEON TECHNOLOGIES Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.36 EUR
Mindestbestellmenge: 1000
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IR21271STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.5A
Number of channels: 1
Supply voltage: 9...20V
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.73 EUR
Mindestbestellmenge: 2500
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IR2127STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 12...20V
Integrated circuit features: MOSFET
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.73 EUR
Mindestbestellmenge: 2500
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IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 IPP030N10N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB0C13A75AE11C&compId=IPP030N10N5-DTE.pdf?ci_sign=1be40706d804a7fcb61d5a9915cdd86de2f44469 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Kind of channel: enhancement
Power dissipation: 250W
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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TLS850D0TAV50ATMA1 TLS850D0TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F0TAV33ATMA1 TLS850F0TAV33ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4960E4EE04259&compId=TLS850F0TAV33.pdf?ci_sign=52cec9691fbcab9bf084b17e499b61cb26c0d750 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F2TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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BAR6304WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
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IPI90R800C3XKSA1 IPI90R800C3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC57FDD6B9C4FA8&compId=IPI90R800C3XKSA1-DTE.pdf?ci_sign=c85ceeb339f596a4d154c0a214d80d7732e29408 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
84+0.86 EUR
87+0.83 EUR
Mindestbestellmenge: 81
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TLD5098ELXUMA1 INFINEON TECHNOLOGIES TLD5098EL-Data-Sheet-11-Infineon.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30432c59a87e012c5e98d2853514&ack=t Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.52 EUR
Mindestbestellmenge: 2500
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IRFB4310ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a
BTS5180-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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BSS139IXTSA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 87A; 79W; D2PAK; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 17nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IR2010STRPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IR2010SPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IPP60R360P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA94E7C0F02143&compId=IPP60R360P7.pdf?ci_sign=0b12d4d4fd5f2cf02bb1bb741529ca54afdbe158
IPP60R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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KP236-PS2GO-KIT
KP236-PS2GO-KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1100; prototype board
Kind of connector: pin strips; USB micro
Kit contents: prototype board
Application: for pressure sensors
Kind of architecture: Cortex M0
Type of development kit: ARM Infineon
Family: XMC1100
Components: XMC1100; XMC4200
Number of add-on connectors: 1
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.09 EUR
Mindestbestellmenge: 2
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IPDD60R125G7XTMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD1B7D4D39B8BF&compId=IPDD60R125G7.pdf?ci_sign=7ebc21da93799da986dcb0eebb06c33188e05b45
IPDD60R125G7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-HDSOP-10-1
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Gate charge: 27nC
On-state resistance: 0.125Ω
Pulsed drain current: 54A
Gate-source voltage: ±20V
Power dissipation: 120W
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
18+4.16 EUR
19+3.93 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5888FNI-LP214T Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C5888FNI-LP214T
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+32.1 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2905ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4FF090C2C8DD820&compId=IRFx2905ZPBF.pdf?ci_sign=3b07f6054abebbd0a9725d152405263260ab9c43
IRFR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR2905ZTRL auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.6 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IR2130STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2132JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+5.95 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRGP4062DPBF pVersion=0046&contRep=ZT&docId=E1C04E895D7D48F1A6F5005056AB5A8F&compId=irgb4062dpbf.pdf?ci_sign=246cfad20b71e3dfbeb2b9e398a40a394810e95e
IRGP4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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S25FL128SAGMFBR00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFBR03
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ086P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9292ADCD3BB1CC&compId=BSZ086P03NS3EGATMA-DTE.pdf?ci_sign=69c493c9f9525a42e6ae68c562c52c19e9d62410
BSZ086P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 69W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ088N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E28059699C11C&compId=BSZ088N03MSG-DTE.pdf?ci_sign=11629a90dffdab400bce748e67528423bd3ce995
BSZ088N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ084N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1FC933E9011C&compId=BSZ084N08NS5-DTE.pdf?ci_sign=3fec2ef640d7d5459287142b23f75e308e399b08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 63W
Polarisation: unipolar
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ086P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9293DA246CB1CC&compId=BSZ086P03NS3GATMA1-dte.pdf?ci_sign=d98c1dc5ac6383467a461262b29e3d9e0acd7ad7
BSZ086P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ088N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E269AB1C6011C&compId=BSZ088N03LSG-DTE.pdf?ci_sign=3b3d13f98dd8170a53c03e2f4d12325b92340d2a
BSZ088N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011DV33-10BVXI Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXE Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXET download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 2Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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XMC1202Q024X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Interface: GPIO; USIC x2
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
Memory: 16kB SRAM; 32kB FLASH
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK02G65C5XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB9BD43B3D72FA8&compId=IDK02G65C5-DTE.pdf?ci_sign=54bd06edd48361545afc753e1485c8d06016913e
IDK02G65C5XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 2A; 36W
Type of diode: Schottky rectifying
Case: PG-TO263-2
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Leakage current: 0.1µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Power dissipation: 36W
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
131+0.55 EUR
137+0.52 EUR
144+0.5 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
TLE6225GXUMA1 TLE6225G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.29 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BCV62CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24
BCV62CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6312 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
248+0.29 EUR
368+0.19 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
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IKCM15L60GDXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEDFAB46113D7&compId=IKCM20L60GA.pdf?ci_sign=dd653c89070a6b043f926e264dac78d345231d50
IKCM20L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Case: PG-MDIP24
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -20...20A
Type of integrated circuit: driver
Power dissipation: 29.2W
Produkt ist nicht verfügbar
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CY7C64225-28PVXC CY7C64225.PDF
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+3.95 EUR
141+3.55 EUR
Mindestbestellmenge: 47
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BSZ900N20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC5E42ECBDA11C&compId=BSZ900N20NS3G-DTE.pdf?ci_sign=4939ebdb5f4f264dea8ce9a94d7bf6e403eed9d1
BSZ900N20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 15.2A
Power dissipation: 62.5W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
46+1.59 EUR
55+1.32 EUR
58+1.24 EUR
250+1.23 EUR
500+1.2 EUR
Mindestbestellmenge: 38
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BSZ900N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3D3610F9C11C&compId=BSZ900N15NS3G-DTE.pdf?ci_sign=9fdf07bf8b46a4af954041b1051c6e9372bea50e
BSZ900N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Power dissipation: 38W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
65+1.12 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 50
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BCR116E6433HTMA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.049 EUR
Mindestbestellmenge: 10000
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IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Case: TO247-4
Produkt ist nicht verfügbar
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IR2233SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.6W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.5W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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BSZ0909NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E2F5FD44F811C&compId=BSZ0909NS-DTE.pdf?ci_sign=2f08ddbecbf859e189004fb9543e95868a6b9f65
BSZ0909NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 32A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 32A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.23 EUR
Mindestbestellmenge: 3000
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IRF7807ZTRPBF pVersion=0046&contRep=ZT&docId=E221AB4E5872EEF1A303005056AB0C4F&compId=irf7807zpbf.pdf?ci_sign=c1df805b56b2417932bb256a741c2f70a29cea6c
IRF7807ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7807VTRPBF pVersion=0046&contRep=ZT&docId=E221AB2C875C09F1A303005056AB0C4F&compId=irf7807vpbf.pdf?ci_sign=78f9e59fb9aca18cea2e3a1094d175afcb9560cf
IRF7807VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP50R140CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE58ABB53C51CC&compId=IPP50R140CP-DTE.pdf?ci_sign=4478e3522ad0dd65fa628814d240f33339433943
IPP50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ040N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E052B42C0811C&compId=BSZ040N04LSG-DTE.pdf?ci_sign=086584638ccfdd5ed44256d041035edc91b171d2
BSZ040N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1947 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
65+1.1 EUR
92+0.78 EUR
98+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 54
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BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.99 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BGT24LTR11N16E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD599DAD3C5E28&compId=BGT24LTR11.pdf?ci_sign=affc801d3381666d890169462b510c4449fcfc61
BGT24LTR11N16E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Case: TSNP16
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.2...3.4V DC
DC supply current: 45mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 10dB
Produkt ist nicht verfügbar
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ESD24VS2UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD9299A9216259&compId=ESD24VS2UE6327.pdf?ci_sign=11ffaf7a1104f12a35260642dc6d98c4cfd7c8ee
ESD24VS2UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 230W; 32V; unidirectional; SOT23; reel,tape
Mounting: SMD
Breakdown voltage: 32V
Kind of package: reel; tape
Type of diode: TVS
Case: SOT23
Max. off-state voltage: 24V
Peak pulse power dissipation: 230W
Semiconductor structure: unidirectional
auf Bestellung 1509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
156+0.46 EUR
204+0.35 EUR
257+0.28 EUR
298+0.24 EUR
343+0.21 EUR
491+0.15 EUR
521+0.14 EUR
Mindestbestellmenge: 156
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IPB65R115CFD7AATMA1 Infineon-IPB65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32146887c81
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.36 EUR
Mindestbestellmenge: 1000
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IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.5A
Number of channels: 1
Supply voltage: 9...20V
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.73 EUR
Mindestbestellmenge: 2500
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IR2127STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 12...20V
Integrated circuit features: MOSFET
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.73 EUR
Mindestbestellmenge: 2500
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IRFP4310ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB0C13A75AE11C&compId=IPP030N10N5-DTE.pdf?ci_sign=1be40706d804a7fcb61d5a9915cdd86de2f44469
IPP030N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Kind of channel: enhancement
Power dissipation: 250W
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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TLS850D0TAV50ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F0TAV33ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4960E4EE04259&compId=TLS850F0TAV33.pdf?ci_sign=52cec9691fbcab9bf084b17e499b61cb26c0d750
TLS850F0TAV33ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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IPI90R800C3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC57FDD6B9C4FA8&compId=IPI90R800C3XKSA1-DTE.pdf?ci_sign=c85ceeb339f596a4d154c0a214d80d7732e29408
IPI90R800C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
84+0.86 EUR
87+0.83 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
TLD5098ELXUMA1 TLD5098EL-Data-Sheet-11-Infineon.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30432c59a87e012c5e98d2853514&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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