Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (150658) > Seite 2506 nach 2511
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1EDI20I12AFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -2...2A Number of channels: 1 Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Technology: EiceDRIVER™ Integrated circuit features: galvanically isolated Voltage class: 1.2kV |
Produkt ist nicht verfügbar |
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1EDI60I12AFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-8 Output current: -6...6A Number of channels: 1 Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Technology: EiceDRIVER™ Integrated circuit features: galvanically isolated Voltage class: 1.2kV |
Produkt ist nicht verfügbar |
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T501N70TOHXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray Case: BG-T7626K-1 Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Max. off-state voltage: 7kV Max. load current: 1kA Load current: 640A Gate current: 350mA Max. forward impulse current: 13.5kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AUIR3314STRL | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5 On-state resistance: 12mΩ Output current: 18A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Application: automotive industry Power dissipation: 2W Kind of package: reel Technology: Classic PROFET Kind of integrated circuit: high-side Mounting: SMD Operating temperature: -40...150°C Case: D2PAK-5 |
Produkt ist nicht verfügbar |
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BBY5302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 6V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF1310NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 73.3nC |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF1310NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 140A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRF100P219AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 316A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IFX1050GVIO | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC Case: PG-DSO-8 Interface: CAN Mounting: SMD Operating temperature: -40...125°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 70mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
6EDL04I06PTXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-28 Output current: -0.375...0.24A Number of channels: 6 Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Supply voltage: 13...17.5V Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP |
Produkt ist nicht verfügbar |
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6EDL04I06NTXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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TC387QP160F300SAEKXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: TC387QP160F300SAEKXUMA2 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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S26KL128SDABHB023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...105°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 100MHz Kind of interface: serial Memory: 128Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL128SDABHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...85°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 128Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL256SDABHB020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...105°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Application: automotive Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL256SDABHB023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...105°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Application: automotive Kind of package: reel; tape Operating frequency: 100MHz Kind of interface: serial Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL256SDABHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...85°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 256Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL512SDABHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...85°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL512SDABHI030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...85°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KL512SDABHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24 Mounting: SMD Operating temperature: -40...105°C Case: FBGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: reel; tape Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KS512SDABHI030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24 Mounting: SMD Operating temperature: -40...85°C Case: FBGA24 Operating voltage: 1.7...1.95V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S26KS512SDABHV030 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24 Mounting: SMD Operating temperature: -40...105°C Case: FBGA24 Operating voltage: 1.7...1.95V Type of integrated circuit: FLASH memory Interface: HyperBus Kind of memory: NOR Flash Kind of package: in-tray Operating frequency: 100MHz Kind of interface: serial Memory: 512Mb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TC367DP64F300SAAKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: TC367DP64F300SAAKXUMA1 |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP410H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ITS4100SSJNXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 57mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhancement Gate-source voltage: -7...23V Pulsed drain current: 150A |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7452TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB107N20NAATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3 Mounting: SMD Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 200V Drain current: 88A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement |
auf Bestellung 820 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Drain-source voltage: 600V Drain current: 0.09A On-state resistance: 45Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Case: SOT89 |
auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Mounting: SMD Drain-source voltage: 100V Drain current: 0.19A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Case: SOT23 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 4609 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN80R4K5P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD Drain current: 1A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 4nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
auf Bestellung 2102 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN80R3K3P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD Drain current: 1.3A On-state resistance: 3.3Ω Type of transistor: N-MOSFET Power dissipation: 6.1W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 6nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPN80R2K4P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD Drain current: 1.7A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Power dissipation: 6.3W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 8nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPN80R600P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD Drain current: 5.5A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Power dissipation: 7.4W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 20nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPN80R750P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 7.2W Polarisation: unipolar Kind of package: reel Version: ESD Gate charge: 17nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Drain-source voltage: 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPI020N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 214W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPG20N06S4L11ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IPG20N06S4L11ATMA2 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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PVU414SPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRGB6B60KDPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
ISC019N03L5SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W Mounting: SMD Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLE42744DV50ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPU60R1K5CEAKMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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S80KS2564GACHI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S80KS2564GACHI043 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF8910TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TD250N16KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Max. load current: 410A Max. forward voltage: 1.5V Load current: 250A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TD210N12KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V Max. load current: 410A Max. forward voltage: 1.65V Load current: 210A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TD250N18KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw Max. load current: 410A Max. forward voltage: 1.5V Load current: 250A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 8kA Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100Q024F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 8 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...85°C Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100Q024F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 8 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T016F0008ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 8kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100Q024F0008ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 8 Memory: 8kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-VQFN-24 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100Q040F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100 Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 12 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T016F0016ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T016F0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC1100T016F0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Family: XMC1100 Kind of architecture: Cortex M0 Number of A/D channels: 6 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-TSSOP-16 Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
1EDI20I12AFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1EDI60I12AFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T501N70TOHXPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 7kV
Max. load current: 1kA
Load current: 640A
Gate current: 350mA
Max. forward impulse current: 13.5kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 7kV
Max. load current: 1kA
Load current: 640A
Gate current: 350mA
Max. forward impulse current: 13.5kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIR3314STRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Kind of package: reel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: D2PAK-5
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Kind of package: reel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Operating temperature: -40...150°C
Case: D2PAK-5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BBY5302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 6V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
41+ | 1.77 EUR |
83+ | 0.87 EUR |
88+ | 0.82 EUR |
150+ | 0.8 EUR |
IRF1310NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF100P219AKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IFX1050GVIO |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
6EDL04I06PTXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 13...17.5V
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
6EDL04I06NTXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.89 EUR |
TC387QP160F300SAEKXUMA2 |
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auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 60.35 EUR |
S26KL128SDABHB023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL128SDABHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 128Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL256SDABHB020 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL256SDABHB023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL256SDABHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL512SDABHI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL512SDABHI030 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KL512SDABHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KS512SDABHI030 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S26KS512SDABHV030 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: FBGA24
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: HyperBus
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 100MHz
Kind of interface: serial
Memory: 512Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TC367DP64F300SAAKXUMA1 |
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auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 33.96 EUR |
BFP410H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |
ITS4100SSJNXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.12 EUR |
IMZ120R030M1HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -7...23V
Pulsed drain current: 150A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 28 EUR |
10+ | 27.86 EUR |
IRF7452TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB107N20NAATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
auf Bestellung 820 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.95 EUR |
9+ | 7.97 EUR |
10+ | 7.52 EUR |
250+ | 7.46 EUR |
BSS225H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT89
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.88 EUR |
116+ | 0.62 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
500+ | 0.32 EUR |
BSS119NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.19A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Mounting: SMD
Drain-source voltage: 100V
Drain current: 0.19A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Case: SOT23
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4609 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
205+ | 0.35 EUR |
313+ | 0.23 EUR |
459+ | 0.16 EUR |
532+ | 0.13 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
1000+ | 0.09 EUR |
IPN80R4K5P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Drain current: 1A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 4nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Drain current: 1A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 4nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
auf Bestellung 2102 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
96+ | 0.75 EUR |
113+ | 0.63 EUR |
123+ | 0.58 EUR |
131+ | 0.55 EUR |
135+ | 0.53 EUR |
IPN80R3K3P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPN80R2K4P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPN80R600P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPN80R750P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI020N06NAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPG20N06S4L11ATMA2 |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 1.07 EUR |
PVU414SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 8.72 EUR |
IRGB6B60KDPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISC019N03L5SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 69W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE42744DV50ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPU60R1K5CEAKMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
300+ | 0.25 EUR |
S80KS2564GACHI040 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S80KS2564GACHI043 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF8910TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TD250N16KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.6kV
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TD215N22KOFHPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
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TD210N12KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
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TD250N18KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; BG-PB50-1; Ufmax: 1.5V; screw
Max. load current: 410A
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.8kV
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XMC1100T038X0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
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XMC1100Q024F0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T038F0016ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T038F0032ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100Q024F0016ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0008ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100Q024F0008ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 8
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-VQFN-24
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
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XMC1100Q040F0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 12
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0016ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
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XMC1100T016F0032ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
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XMC1100T016F0064ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Family: XMC1100
Kind of architecture: Cortex M0
Number of A/D channels: 6
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-TSSOP-16
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
Im Einkaufswagen
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