Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151636) > Seite 2506 nach 2528
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IKCM15F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V Type of integrated circuit: driver Kind of integrated circuit: half-bridge Case: DIP24 Output current: 15A Mounting: THT Operating temperature: -40...125°C Maximum output current: 15A Supply voltage: 14.5...18.5V |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84PH7894XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23 Type of transistor: P-MOSFET Kind of channel: enhancement Polarisation: P Case: SOT23 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 60V Drain current: 0.17A Gate charge: 1nC Power dissipation: 0.36W Gate-source voltage: 20V Application: automotive industry |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Pulsed collector current: 100A Application: Inverter Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-ECONO3-3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
F475R12KS4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Pulsed collector current: 150A Power dissipation: 500W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 2 Topology: IGBT half-bridge x2; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONO2-6 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 300A Power dissipation: 750W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FS100R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Module: IGBT; single diode; Ic: 140A; screw; 480W Type of semiconductor module: IGBT Semiconductor structure: single diode Collector current: 140A Electrical mounting: screw Gate-emitter voltage: ±20V Power dissipation: 480W |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2004STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817K40E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Current gain: 250 Mounting: SMD Frequency: 170MHz Application: automotive industry |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817K40WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SC70; SOT323 Current gain: 250 Mounting: SMD Frequency: 170MHz Application: automotive industry |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5316H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry Polarisation: bipolar Type of transistor: PNP Case: TO261-4 Mounting: SMD Power dissipation: 2W Collector current: 1A Collector-emitter voltage: 80V Application: automotive industry Frequency: 125MHz |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420 Mounting: SMD Frequency: 250MHz Application: automotive industry |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS244ZE3043AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5 Type of integrated circuit: power switch Kind of integrated circuit: low-side Number of channels: 1 Mounting: THT Case: PG-TO220-5 Kind of output: N-Channel Output current: 19A Power dissipation: 170W Integrated circuit features: internal temperature sensor Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C On-state resistance: 13mΩ Output voltage: 55V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SPP15N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 15A Power dissipation: 156W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD65R380C6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPD65R380E6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPD65R380E6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPA50R380CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4A Power dissipation: 29.2W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 477 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4468PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC Kind of package: tube Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Drain current: 290A Drain-source voltage: 100V Case: TO247AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFP4568PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 171A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BTS436L2GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 9.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: D2PAK On-state resistance: 35mΩ Supply voltage: 4.7...41V Technology: SIPMOS™ Power dissipation: 75W Active logical level: high Integrated circuit features: thermal protection Operating temperature: -40...150°C Application: automotive industry |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PVG612APBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 2A Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV |
auf Bestellung 338 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4668PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 130A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IPA030N10NF2SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CYPD3177-24LQXQ | INFINEON TECHNOLOGIES |
![]() Description: IC: interface Type of integrated circuit: interface |
auf Bestellung 3890 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4020PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FP40R12KE3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Case: AG-ECONO2-5 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 80A Application: Inverter Power dissipation: 200W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 2 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
FP40R12KE3BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7103TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IKCM10H60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Power dissipation: 23.1W |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7311TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF7341GTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3190 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7341TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.7A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
AUIRFN8405TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3007STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK Type of transistor: N-MOSFET Case: D2PAK Kind of channel: enhancement Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: 62A Drain-source voltage: 75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRFR6215TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 13A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY8CMBR3106S-LQXI | INFINEON TECHNOLOGIES |
![]() Description: CY8CMBR3106S-LQXI |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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CY8CMBR3102-SX1IT | INFINEON TECHNOLOGIES |
![]() Description: CY8CMBR3102-SX1IT |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB034N06N3GATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: TO263-7 Gate-source voltage: 20V Mounting: SMD Gate charge: 130nC Kind of channel: enhancement Technology: MOSFET Electrical mounting: SMT |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7465TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.9A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IPD020N03LF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPD020N03LF2SATMA1 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7324TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SPD08N50C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: SPD08N50C3ATMA1 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT422S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state; 25mA; SMT; SMD8; -40÷85°C; Leads: Gull Wing; 4kV Type of relay: solid state Control current max.: 25mA Mounting: SMT Case: SMD8 Operating temperature: -40...85°C Leads: Gull Wing Insulation voltage: 4kV |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2181STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.8A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Supply voltage: 10...20V Voltage class: 600V |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA11N80C3XKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT Type of transistor: N-MOSFET Drain-source voltage: 800V Drain current: 11A Case: TO220-3 Gate-source voltage: 20V On-state resistance: 0.45Ω Mounting: THT Kind of channel: enhancement Gate charge: 85nC Power dissipation: 34W Technology: MOSFET Electrical mounting: SMT |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS169IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4110PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R180C7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R180C7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPW60R180P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPP60R180P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 53A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IPAN60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6302LE6327XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: BAR6302LE6327XTMA1 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6305WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW Semiconductor structure: common cathode Case: SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Max. load current: 100mA Power dissipation: 0.25W Max. forward voltage: 1.2V Application: automotive industry Max. off-state voltage: 50V |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6306WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW Semiconductor structure: common cathode Case: SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Max. load current: 100mA Power dissipation: 0.25W Max. forward voltage: 1.2V Application: automotive industry Max. off-state voltage: 50V |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW Semiconductor structure: single diode Case: SC70; SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Max. load current: 100mA Power dissipation: 0.25W Max. forward voltage: 1.1V Application: automotive industry Max. off-state voltage: 150V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6406E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW Semiconductor structure: common anode Case: SC59 Mounting: SMD Type of diode: switching Load current: 0.1A Max. load current: 100mA Power dissipation: 0.25W Application: automotive industry Max. off-state voltage: 150V |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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ICE3AR10080JZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V Type of integrated circuit: PMIC Frequency: 0.1MHz Case: DIP8 Mounting: THT Operating temperature: -40...150°C Topology: flyback Input voltage: 85...265V AC Breakdown voltage: 800V Supply voltage: 10.5...27V |
auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
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IKCM15F60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 13.18 EUR |
42+ | 11.87 EUR |
BSS84PH7894XTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: P
Case: SOT23
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.17A
Gate charge: 1nC
Power dissipation: 0.36W
Gate-source voltage: 20V
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Kind of channel: enhancement
Polarisation: P
Case: SOT23
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.17A
Gate charge: 1nC
Power dissipation: 0.36W
Gate-source voltage: 20V
Application: automotive industry
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.048 EUR |
FP50R12KT3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
F475R12KS4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS150R12KT4BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS200R12KT4RB11BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS100R12KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single diode; Ic: 140A; screw; 480W
Type of semiconductor module: IGBT
Semiconductor structure: single diode
Collector current: 140A
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 480W
Category: IGBT modules
Description: Module: IGBT; single diode; Ic: 140A; screw; 480W
Type of semiconductor module: IGBT
Semiconductor structure: single diode
Collector current: 140A
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 480W
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 169.1 EUR |
IRS2004STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.92 EUR |
BC817K40E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.047 EUR |
BC817K40WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.056 EUR |
BCP5316H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: TO261-4
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: TO261-4
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 125MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.17 EUR |
BC850CWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.049 EUR |
IRFB4227PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.85 EUR |
31+ | 2.36 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
BTS244ZE3043AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Mounting: THT
Case: PG-TO220-5
Kind of output: N-Channel
Output current: 19A
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
On-state resistance: 13mΩ
Output voltage: 55V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Number of channels: 1
Mounting: THT
Case: PG-TO220-5
Kind of output: N-Channel
Output current: 19A
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
On-state resistance: 13mΩ
Output voltage: 55V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP15N60C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.73 EUR |
IPD65R380C6BTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R380E6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R380E6BTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA50R380CEXKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
64+ | 1.12 EUR |
70+ | 1.04 EUR |
85+ | 0.85 EUR |
90+ | 0.8 EUR |
250+ | 0.77 EUR |
IRFP4468PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 290A
Drain-source voltage: 100V
Case: TO247AC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 290A
Drain-source voltage: 100V
Case: TO247AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP4568PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS436L2GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V
Technology: SIPMOS™
Power dissipation: 75W
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V
Technology: SIPMOS™
Power dissipation: 75W
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.72 EUR |
PVG612APBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 12.66 EUR |
IRFP4668PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA030N10NF2SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CYPD3177-24LQXQ |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
490+ | 1.59 EUR |
IRFB4020PBFXKMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP40R12KE3 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Application: Inverter
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Application: Inverter
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP40R12KE3BPSA1 |
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auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 119.1 EUR |
IRF7103TRPBFXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKCM10H60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
IRF7311TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF7341GTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.5 EUR |
39+ | 1.84 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
1000+ | 0.96 EUR |
2000+ | 0.93 EUR |
IRF7341TRPBFXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFN8405TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 1.82 EUR |
IRF3007STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 62A
Drain-source voltage: 75V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 62A
Drain-source voltage: 75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR6215TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8CMBR3106S-LQXI |
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auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
490+ | 2.23 EUR |
CY8CMBR3102-SX1IT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8CMBR3102-SX1IT
Category: Integrated circuits - Unclassified
Description: CY8CMBR3102-SX1IT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.69 EUR |
IPB034N06N3GATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.78 EUR |
IRF7465TRPBFXTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD020N03LF2SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD020N03LF2SATMA1
Category: Transistors - Unclassified
Description: IPD020N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.68 EUR |
IRF7324TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPD08N50C3ATMA1 |
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auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.79 EUR |
PVT422S-TPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; 25mA; SMT; SMD8; -40÷85°C; Leads: Gull Wing; 4kV
Type of relay: solid state
Control current max.: 25mA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
Category: One Phase Solid State Relays
Description: Relay: solid state; 25mA; SMT; SMD8; -40÷85°C; Leads: Gull Wing; 4kV
Type of relay: solid state
Control current max.: 25mA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
750+ | 8.71 EUR |
IR2181STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
Voltage class: 600V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.87 EUR |
SPA11N80C3XKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Power dissipation: 34W
Technology: MOSFET
Electrical mounting: SMT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Power dissipation: 34W
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.84 EUR |
BSS169IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.073 EUR |
IRFP4110PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.55 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
IPP60R180C7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.39 EUR |
19+ | 3.89 EUR |
22+ | 3.4 EUR |
23+ | 3.22 EUR |
IPW60R180C7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R180P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R180P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPAN60R180P7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.1 EUR |
BAR6302LE6327XTMA1 |
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auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.086 EUR |
BAR6305WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.094 EUR |
BAR6306WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.094 EUR |
BAR6404WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW
Semiconductor structure: single diode
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 150V
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW
Semiconductor structure: single diode
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.14 EUR |
BAR6406E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common anode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common anode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.067 EUR |
ICE3AR10080JZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 800V
Supply voltage: 10.5...27V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 800V
Supply voltage: 10.5...27V
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.59 EUR |