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BTS428L2 BTS428L2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697BC696E816469&compId=BTS428L2.pdf?ci_sign=7cc3270de69e551af4d4ebf76921c7f4173e8300 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Technology: Classic PROFET; SIPMOS™
Output voltage: 4.75...41V
auf Bestellung 2326 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.16 EUR
26+2.83 EUR
27+2.67 EUR
1000+2.59 EUR
Mindestbestellmenge: 12
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BTS4300SGA BTS4300SGA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EBCBF94D4469&compId=BTS4300SGA.pdf?ci_sign=e49e04d0c15b1f902ef4a0f745ff132452f09ec6 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
39+1.86 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 25
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BTS441TG BTS441TG INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C33B22E7E469&compId=BTS441TG.pdf?ci_sign=9e857110a35ffa7d63a6a20043dd527b680290cc Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.69 EUR
19+3.92 EUR
20+3.7 EUR
100+3.62 EUR
250+3.56 EUR
Mindestbestellmenge: 13
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BTS4880R BTS4880R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697F28E666E4469&compId=BTS4880R.pdf?ci_sign=60127cda9a86104980dbd3b093f21379556676f9 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFB3207ZGPBF IRFB3207ZGPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B2F0373A9EF1A303005056AB0C4F&compId=irfb3207zgpbf.pdf?ci_sign=0f418ffa88abe060375491d71bbeed16a4ddf772 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3207ZPBF IRFB3207ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6C6F1A6F5005056AB5A8F&compId=irfs3207zpbf.pdf?ci_sign=d9a881f5e50cc8dfcd68d3e1192d7da63798c2e4 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
30+2.39 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 21
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IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B705F1A6F5005056AB5A8F&compId=irfb4019pbf.pdf?ci_sign=35a3c85c464dacc468771d93b7f858d4900a1526 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 95mΩ
Drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 80W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
40+1.82 EUR
46+1.56 EUR
Mindestbestellmenge: 36
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BSS138WH6327XTSA1 BSS138WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7BF62918B510B&compId=BSS138WH6327XTSA1.pdf?ci_sign=bbc28ba1f364f7544f7ce1d57a8ff74804399786 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.28A
Power dissipation: 0.5W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 2273 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
556+0.13 EUR
642+0.11 EUR
851+0.084 EUR
946+0.076 EUR
1244+0.057 EUR
1316+0.054 EUR
Mindestbestellmenge: 385
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BSS138WH6433XTMA1 BSS138WH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.22A
Power dissipation: 0.5W
Pulsed drain current: 1.12A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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IRFB4020PBF IRFB4020PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B70CF1A6F5005056AB5A8F&compId=irfb4020pbf.pdf?ci_sign=da17b13cfdcfe4ba2c35db0a367f16527501b197 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
49+1.47 EUR
65+1.1 EUR
66+1.09 EUR
69+1.04 EUR
71+1.02 EUR
Mindestbestellmenge: 40
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IRFS7530TRL7PP IRFS7530TRL7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6B3468D04A1EC&compId=irfs7530-7ppbf.pdf?ci_sign=efcd65c1b71b20dce22caa7810184cdbec219b05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
Gate charge: 236nC
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.9 EUR
32+2.3 EUR
33+2.17 EUR
500+2.09 EUR
Mindestbestellmenge: 19
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IRS2184PBF IRS2184PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
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AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB1C37C3CAD820&compId=AIKW75N60CT.pdf?ci_sign=30f321bc96abbc3e7898d3a39c8acc9ee7412c40 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Produkt ist nicht verfügbar
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IRFB4510PBF IRFB4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA418D2E1B5EA&compId=IRFB4510PBF.pdf?ci_sign=9339082daf1e6b0bfcc37dddedca7d1124a64194 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Gate charge: 58nC
On-state resistance: 13.5mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
70+1.03 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 63
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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70 description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
88+0.82 EUR
98+0.73 EUR
114+0.63 EUR
121+0.59 EUR
150+0.57 EUR
Mindestbestellmenge: 77
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IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAF57F0C315EA&compId=IRFB7540PBF.pdf?ci_sign=3d11ad0f52ae3cf89f9ccc7efd218a58eb0629b9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 5.1mΩ
Power dissipation: 160W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.46 EUR
Mindestbestellmenge: 29
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IRFS7540TRLPBF IRFS7540TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A66E02D68081EC&compId=irfs7540pbf.pdf?ci_sign=5d45debb0a3032e3043d97dfa50cf863af6bf176 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7EACE1252E469&compId=SMBT3904SH6327.pdf?ci_sign=39e11e11fa1113240b9d0d9e56f39865a1ba42b0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
Mindestbestellmenge: 88
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IAUC120N06S5L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 757A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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AIKW20N60CTXKSA1 AIKW20N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA837B61DA3820&compId=AIKW20N60CT.pdf?ci_sign=bc5c3a55a4b42dfdc8268e530996ecdd9600c065 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IRLR8103VTRPBF IRLR8103VTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22280CD565EB1F1A303005056AB0C4F&compId=irlr8103vpbf.pdf?ci_sign=492ac37580de93cbbb628a22be73f48fd48cb98a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFB4615PBF IRFB4615PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A76F1A6F5005056AB5A8F&compId=irfb4615pbf.pdf?ci_sign=b017e04afb02e0c37365c5a851437e30722be4bc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 144W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
56+1.29 EUR
63+1.14 EUR
80+0.9 EUR
82+0.87 EUR
Mindestbestellmenge: 53
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IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BE17A30519F1A303005056AB0C4F&compId=irfml8244pbf.pdf?ci_sign=af2734a37e55aa8f941c567ed413359dae2c08ef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 6608 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
239+0.3 EUR
319+0.22 EUR
368+0.19 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 193
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BCR185WH6327 BCR185WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
Collector current: 0.1A
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
769+0.093 EUR
Mindestbestellmenge: 769
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SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E343ED03F1CC&compId=SPP80P06PHXKSA1-DTE.pdf?ci_sign=0fdc7be718405dc45ca2e85200515e93fcb1a285 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Kind of channel: enhancement
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Power dissipation: 340W
Gate-source voltage: ±20V
auf Bestellung 44 Stücke:
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16+4.53 EUR
25+2.95 EUR
26+2.79 EUR
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IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1399 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
38+1.92 EUR
46+1.57 EUR
49+1.49 EUR
1000+1.43 EUR
Mindestbestellmenge: 31
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AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA34A695793820&compId=AIGW50N65H5.pdf?ci_sign=0e6086f8da3182059009f2b599abcebf9a2c3ea7 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 33ns
Turn-off time: 184ns
Produkt ist nicht verfügbar
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AIKP20N60CTAKSA1 AIKP20N60CTAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA723D61621820&compId=AIKP20N60CT.pdf?ci_sign=a20e22016a11737bd2ad4bbce2aae54270007856 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
16+4.68 EUR
18+4.05 EUR
19+3.83 EUR
250+3.69 EUR
Mindestbestellmenge: 14
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AIKB20N60CTATMA1 AIKB20N60CTATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA6C82BE757820&compId=AIKB20N60CT.pdf?ci_sign=729fcae0a93b4fbd0516dd7ddb9a5e54922e5b26 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IKQ120N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC636C224DA33D7&compId=IKQ120N60T.pdf?ci_sign=b38a8c3161654d1e1da3919298b71c00ef65edd6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC61D783DC6F3D7&compId=IKQ120N60TA.pdf?ci_sign=1c156fe05a0361b5601e9e8ff2b0d1bd8ddd8421 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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TT122N22KOFHPSA2 TT122N22KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE30ABE97A0469&compId=TT122N22KOF.pdf?ci_sign=f2d3a1a41575001d0d829df324176bb20fd556d8 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCED13265235EA&compId=IRFR15N20DTRPBF.pdf?ci_sign=f4fbed7f90d41b3074d6e145e3b9867c8706beca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA30C702DB42143&compId=IPB073N15N5.pdf?ci_sign=af20e0604e1889601409b069b73fbbca7c50096a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 7.3mΩ
Drain current: 81A
Gate-source voltage: ±20V
Power dissipation: 214W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Interface: GPIO
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Memory: 16kB SRAM; 32kB FLASH
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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XMC1202T028X0064ABXUMA1 XMC1202T028X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-28
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
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AIHD10N60RATMA1 AIHD10N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA56A2D5665820&compId=AIHD10N60R.pdf?ci_sign=02febf6bcc61b28ffaa6a2d1975f89a5e580013b Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A6FF1A6F5005056AB5A8F&compId=irfs4610.pdf?ci_sign=f82b81a9499178560620d52f14838fe735b30f24 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
27+2.72 EUR
30+2.45 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 26
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IRFB4620PBF IRFB4620PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A7DF1A6F5005056AB5A8F&compId=irfb4620pbf.pdf?ci_sign=42d0628fba08e7dbecd4a027551ca7bbbb81baaf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
28+2.6 EUR
30+2.43 EUR
33+2.22 EUR
Mindestbestellmenge: 25
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BFP183WH6327XTSA1 BFP183WH6327XTSA1 INFINEON TECHNOLOGIES bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 65mA
auf Bestellung 2319 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
343+0.21 EUR
388+0.18 EUR
451+0.16 EUR
496+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 278
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BFP196WH6327 BFP196WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D83F728EC11C&compId=BFP196WH6327-dte.pdf?ci_sign=6513198cf786f3ecf728a401abed3d957006453c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 5GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 0.15A
auf Bestellung 5698 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
197+0.36 EUR
317+0.23 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 152
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BFR181WH6327XTSA1 BFR181WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC244ACA589D3D7&compId=BFR181WH6327.pdf?ci_sign=73bcb88578474fc2ccb23c7942861156c0acb869 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 20mA
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
368+0.19 EUR
530+0.13 EUR
613+0.12 EUR
712+0.1 EUR
932+0.077 EUR
995+0.072 EUR
Mindestbestellmenge: 239
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SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74363D64915EA&compId=SPP04N80C3.pdf?ci_sign=634f55a9ae6c6b2461f8c0a2174b7a09f2113185 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
37+1.96 EUR
43+1.69 EUR
45+1.6 EUR
250+1.54 EUR
Mindestbestellmenge: 33
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IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.62 EUR
21+3.42 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 20
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IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A684F93A41EC&compId=irfp7530pbf.pdf?ci_sign=9ac261215de2ad423fa2591b6c80df9d839c61a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.82 EUR
21+3.42 EUR
23+3.23 EUR
25+3.12 EUR
Mindestbestellmenge: 15
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BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CEBF30B5457E749&compId=BSS209PW.pdf?ci_sign=e9489374d989629f4c132f9c875b4428e0978917 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3699 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
397+0.18 EUR
549+0.13 EUR
633+0.11 EUR
1071+0.067 EUR
1132+0.063 EUR
2500+0.062 EUR
3000+0.061 EUR
Mindestbestellmenge: 295
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BSP171PH6327XTSA1 BSP171PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9213BC79B0F1CC&compId=BSP171PH6327XTSA1-dte.pdf?ci_sign=274099176c997552a32d0a5e51cc2bc110b71f8f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1933 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
95+0.76 EUR
110+0.65 EUR
197+0.36 EUR
208+0.34 EUR
Mindestbestellmenge: 75
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCABFEDCCB15EA&compId=IRFB7440PBF.pdf?ci_sign=e1a8189860eb004e5ec1a517ed03455a0c961fb8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
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IRFR4104TRPBF IRFR4104TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD0D220F9975EA&compId=IRFR4104TRPBF.pdf?ci_sign=830393c4e09abe5762fb941f8c9c6d4ae5a4c9c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
76+0.94 EUR
79+0.92 EUR
Mindestbestellmenge: 50
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BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 13598 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
281+0.25 EUR
325+0.22 EUR
512+0.14 EUR
847+0.085 EUR
895+0.08 EUR
6000+0.077 EUR
Mindestbestellmenge: 186
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TLE4906KHTSA1 TLE4906KHTSA1 INFINEON TECHNOLOGIES Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Kind of sensor: unipolar
auf Bestellung 987 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
83+0.87 EUR
87+0.83 EUR
133+0.54 EUR
141+0.51 EUR
Mindestbestellmenge: 75
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TLE4935L TLE4935L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769 Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: latch
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 45
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BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A842AAD03C310B&compId=BSS816NWH6327XTSA1.pdf?ci_sign=0330cb7ff020b4a0a3d4eb05d602d7866cbabb9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
410+0.17 EUR
554+0.13 EUR
626+0.11 EUR
731+0.098 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 278
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Power: 625mW
Supply voltage: 6...20V DC
Turn-on time: 50ns
Turn-off time: 50ns
Output current: -3.3...2.3A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Produkt ist nicht verfügbar
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BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
142+0.5 EUR
Mindestbestellmenge: 122
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRFS4229TRLPBF IRFS4229TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C86ABB5A59F1A303005056AB0C4F&compId=irfs4229pbf.pdf?ci_sign=610a1310601004a142c32c1e433d2c89212cbf1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4321TRLPBF IRFS4321TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF51891A1A95EA&compId=IRFS4321TRLPBF.pdf?ci_sign=a2765fa9ff0e7e96465d26ae8fb10a38c345d12f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 20
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BTS428L2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697BC696E816469&compId=BTS428L2.pdf?ci_sign=7cc3270de69e551af4d4ebf76921c7f4173e8300
BTS428L2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Technology: Classic PROFET; SIPMOS™
Output voltage: 4.75...41V
auf Bestellung 2326 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.16 EUR
26+2.83 EUR
27+2.67 EUR
1000+2.59 EUR
Mindestbestellmenge: 12
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BTS4300SGA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EBCBF94D4469&compId=BTS4300SGA.pdf?ci_sign=e49e04d0c15b1f902ef4a0f745ff132452f09ec6
BTS4300SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
39+1.86 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 25
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BTS441TG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C33B22E7E469&compId=BTS441TG.pdf?ci_sign=9e857110a35ffa7d63a6a20043dd527b680290cc
BTS441TG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.69 EUR
19+3.92 EUR
20+3.7 EUR
100+3.62 EUR
250+3.56 EUR
Mindestbestellmenge: 13
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BTS4880R pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697F28E666E4469&compId=BTS4880R.pdf?ci_sign=60127cda9a86104980dbd3b093f21379556676f9
BTS4880R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFB3207ZGPBF pVersion=0046&contRep=ZT&docId=E221B2F0373A9EF1A303005056AB0C4F&compId=irfb3207zgpbf.pdf?ci_sign=0f418ffa88abe060375491d71bbeed16a4ddf772
IRFB3207ZGPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6C6F1A6F5005056AB5A8F&compId=irfs3207zpbf.pdf?ci_sign=d9a881f5e50cc8dfcd68d3e1192d7da63798c2e4
IRFB3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
30+2.39 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 21
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IRFB4019PBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B705F1A6F5005056AB5A8F&compId=irfb4019pbf.pdf?ci_sign=35a3c85c464dacc468771d93b7f858d4900a1526
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 95mΩ
Drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 80W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
40+1.82 EUR
46+1.56 EUR
Mindestbestellmenge: 36
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BSS138WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7BF62918B510B&compId=BSS138WH6327XTSA1.pdf?ci_sign=bbc28ba1f364f7544f7ce1d57a8ff74804399786
BSS138WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.28A
Power dissipation: 0.5W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 2273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
556+0.13 EUR
642+0.11 EUR
851+0.084 EUR
946+0.076 EUR
1244+0.057 EUR
1316+0.054 EUR
Mindestbestellmenge: 385
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BSS138WH6433XTMA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.22A
Power dissipation: 0.5W
Pulsed drain current: 1.12A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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IRFB4020PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B70CF1A6F5005056AB5A8F&compId=irfb4020pbf.pdf?ci_sign=da17b13cfdcfe4ba2c35db0a367f16527501b197
IRFB4020PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
49+1.47 EUR
65+1.1 EUR
66+1.09 EUR
69+1.04 EUR
71+1.02 EUR
Mindestbestellmenge: 40
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IRFS7530TRL7PP pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6B3468D04A1EC&compId=irfs7530-7ppbf.pdf?ci_sign=efcd65c1b71b20dce22caa7810184cdbec219b05
IRFS7530TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
Gate charge: 236nC
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
32+2.3 EUR
33+2.17 EUR
500+2.09 EUR
Mindestbestellmenge: 19
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IRS2184PBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D77F1A6F5005056AB5A8F&compId=irs2184.pdf?ci_sign=b2969db394933879a7947637133bf1e850e89647
IRS2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
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AIKW75N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB1C37C3CAD820&compId=AIKW75N60CT.pdf?ci_sign=30f321bc96abbc3e7898d3a39c8acc9ee7412c40
AIKW75N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA418D2E1B5EA&compId=IRFB4510PBF.pdf?ci_sign=9339082daf1e6b0bfcc37dddedca7d1124a64194
IRFB4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Gate charge: 58nC
On-state resistance: 13.5mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
70+1.03 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 63
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IRFU5305PBF description pVersion=0046&contRep=ZT&docId=E221C4BBA30AFBF1A303005056AB0C4F&compId=irfr5305pbf.pdf?ci_sign=7de46f4b9e6f21d503ab5b0e162e5f7e5c9fdf70
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
88+0.82 EUR
98+0.73 EUR
114+0.63 EUR
121+0.59 EUR
150+0.57 EUR
Mindestbestellmenge: 77
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IRFB7540PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAF57F0C315EA&compId=IRFB7540PBF.pdf?ci_sign=3d11ad0f52ae3cf89f9ccc7efd218a58eb0629b9
IRFB7540PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 5.1mΩ
Power dissipation: 160W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7540TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A66E02D68081EC&compId=irfs7540pbf.pdf?ci_sign=5d45debb0a3032e3043d97dfa50cf863af6bf176
IRFS7540TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3904SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7EACE1252E469&compId=SMBT3904SH6327.pdf?ci_sign=39e11e11fa1113240b9d0d9e56f39865a1ba42b0
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 757A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW20N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA837B61DA3820&compId=AIKW20N60CT.pdf?ci_sign=bc5c3a55a4b42dfdc8268e530996ecdd9600c065
AIKW20N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8103VTRPBF pVersion=0046&contRep=ZT&docId=E22280CD565EB1F1A303005056AB0C4F&compId=irlr8103vpbf.pdf?ci_sign=492ac37580de93cbbb628a22be73f48fd48cb98a
IRLR8103VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4615PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A76F1A6F5005056AB5A8F&compId=irfb4615pbf.pdf?ci_sign=b017e04afb02e0c37365c5a851437e30722be4bc
IRFB4615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 144W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
56+1.29 EUR
63+1.14 EUR
80+0.9 EUR
82+0.87 EUR
Mindestbestellmenge: 53
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IRFML8244TRPBF pVersion=0046&contRep=ZT&docId=E221BE17A30519F1A303005056AB0C4F&compId=irfml8244pbf.pdf?ci_sign=af2734a37e55aa8f941c567ed413359dae2c08ef
IRFML8244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 6608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
239+0.3 EUR
319+0.22 EUR
368+0.19 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 193
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BCR185WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C579BD09108469&compId=BCR185.pdf?ci_sign=8b5a427d7e89c96143962f50eb7401ae7f4fadba
BCR185WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
Collector current: 0.1A
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
769+0.093 EUR
Mindestbestellmenge: 769
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SPP80P06PHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E343ED03F1CC&compId=SPP80P06PHXKSA1-DTE.pdf?ci_sign=0fdc7be718405dc45ca2e85200515e93fcb1a285
SPP80P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Kind of channel: enhancement
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Power dissipation: 340W
Gate-source voltage: ±20V
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 16
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IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
38+1.92 EUR
46+1.57 EUR
49+1.49 EUR
1000+1.43 EUR
Mindestbestellmenge: 31
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AIGW50N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA34A695793820&compId=AIGW50N65H5.pdf?ci_sign=0e6086f8da3182059009f2b599abcebf9a2c3ea7
AIGW50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 33ns
Turn-off time: 184ns
Produkt ist nicht verfügbar
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AIKP20N60CTAKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA723D61621820&compId=AIKP20N60CT.pdf?ci_sign=a20e22016a11737bd2ad4bbce2aae54270007856
AIKP20N60CTAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
16+4.68 EUR
18+4.05 EUR
19+3.83 EUR
250+3.69 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AIKB20N60CTATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA6C82BE757820&compId=AIKB20N60CT.pdf?ci_sign=729fcae0a93b4fbd0516dd7ddb9a5e54922e5b26
AIKB20N60CTATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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IKQ120N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC636C224DA33D7&compId=IKQ120N60T.pdf?ci_sign=b38a8c3161654d1e1da3919298b71c00ef65edd6
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ120N60TAXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC61D783DC6F3D7&compId=IKQ120N60TA.pdf?ci_sign=1c156fe05a0361b5601e9e8ff2b0d1bd8ddd8421
IKQ120N60TAXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Produkt ist nicht verfügbar
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TT122N22KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE30ABE97A0469&compId=TT122N22KOF.pdf?ci_sign=f2d3a1a41575001d0d829df324176bb20fd556d8
TT122N22KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCED13265235EA&compId=IRFR15N20DTRPBF.pdf?ci_sign=f4fbed7f90d41b3074d6e145e3b9867c8706beca
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA30C702DB42143&compId=IPB073N15N5.pdf?ci_sign=af20e0604e1889601409b069b73fbbca7c50096a
IPB073N15N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 7.3mΩ
Drain current: 81A
Gate-source voltage: ±20V
Power dissipation: 214W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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XMC1202T028X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T028X0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Interface: GPIO
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Memory: 16kB SRAM; 32kB FLASH
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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XMC1202T028X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1202T028X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-28
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIHD10N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA56A2D5665820&compId=AIHD10N60R.pdf?ci_sign=02febf6bcc61b28ffaa6a2d1975f89a5e580013b
AIHD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRFB4610PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A6FF1A6F5005056AB5A8F&compId=irfs4610.pdf?ci_sign=f82b81a9499178560620d52f14838fe735b30f24
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
27+2.72 EUR
30+2.45 EUR
57+1.27 EUR
60+1.2 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4620PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A7DF1A6F5005056AB5A8F&compId=irfb4620pbf.pdf?ci_sign=42d0628fba08e7dbecd4a027551ca7bbbb81baaf
IRFB4620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.6 EUR
30+2.43 EUR
33+2.22 EUR
Mindestbestellmenge: 25
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BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 65mA
auf Bestellung 2319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
343+0.21 EUR
388+0.18 EUR
451+0.16 EUR
496+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 278
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BFP196WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D83F728EC11C&compId=BFP196WH6327-dte.pdf?ci_sign=6513198cf786f3ecf728a401abed3d957006453c
BFP196WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 5GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 0.15A
auf Bestellung 5698 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
197+0.36 EUR
317+0.23 EUR
658+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 152
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BFR181WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC244ACA589D3D7&compId=BFR181WH6327.pdf?ci_sign=73bcb88578474fc2ccb23c7942861156c0acb869
BFR181WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 20mA
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
368+0.19 EUR
530+0.13 EUR
613+0.12 EUR
712+0.1 EUR
932+0.077 EUR
995+0.072 EUR
Mindestbestellmenge: 239
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP04N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74363D64915EA&compId=SPP04N80C3.pdf?ci_sign=634f55a9ae6c6b2461f8c0a2174b7a09f2113185
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
37+1.96 EUR
43+1.69 EUR
45+1.6 EUR
250+1.54 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7530PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67
IRFB7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.62 EUR
21+3.42 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP7530PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6A684F93A41EC&compId=irfp7530pbf.pdf?ci_sign=9ac261215de2ad423fa2591b6c80df9d839c61a7
IRFP7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
21+3.42 EUR
23+3.23 EUR
25+3.12 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BSS209PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CEBF30B5457E749&compId=BSS209PW.pdf?ci_sign=e9489374d989629f4c132f9c875b4428e0978917
BSS209PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3699 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
397+0.18 EUR
549+0.13 EUR
633+0.11 EUR
1071+0.067 EUR
1132+0.063 EUR
2500+0.062 EUR
3000+0.061 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BSP171PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9213BC79B0F1CC&compId=BSP171PH6327XTSA1-dte.pdf?ci_sign=274099176c997552a32d0a5e51cc2bc110b71f8f
BSP171PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 1933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
95+0.76 EUR
110+0.65 EUR
197+0.36 EUR
208+0.34 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7440PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCABFEDCCB15EA&compId=IRFB7440PBF.pdf?ci_sign=e1a8189860eb004e5ec1a517ed03455a0c961fb8
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD0D220F9975EA&compId=IRFR4104TRPBF.pdf?ci_sign=830393c4e09abe5762fb941f8c9c6d4ae5a4c9c8
IRFR4104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
76+0.94 EUR
79+0.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BAT6402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
auf Bestellung 13598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
325+0.22 EUR
512+0.14 EUR
847+0.085 EUR
895+0.08 EUR
6000+0.077 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Kind of sensor: unipolar
auf Bestellung 987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
83+0.87 EUR
87+0.83 EUR
133+0.54 EUR
141+0.51 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
TLE4935L pVersion=0046&contRep=ZT&docId=E235614E8CC399F1A303005056AB0C4F&compId=TLE49x5L.PDF?ci_sign=5944ef1bb79c45f45003bec140a25aecf3323769
TLE4935L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: latch
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
BSS816NWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A842AAD03C310B&compId=BSS816NWH6327XTSA1.pdf?ci_sign=0330cb7ff020b4a0a3d4eb05d602d7866cbabb9a
BSS816NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
410+0.17 EUR
554+0.13 EUR
626+0.11 EUR
731+0.098 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 278
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Power: 625mW
Supply voltage: 6...20V DC
Turn-on time: 50ns
Turn-off time: 50ns
Output current: -3.3...2.3A
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Produkt ist nicht verfügbar
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BAT1704WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1704WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
142+0.5 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
BFP405H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4229TRLPBF pVersion=0046&contRep=ZT&docId=E221C86ABB5A59F1A303005056AB0C4F&compId=irfs4229pbf.pdf?ci_sign=610a1310601004a142c32c1e433d2c89212cbf1e
IRFS4229TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4321TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF51891A1A95EA&compId=IRFS4321TRLPBF.pdf?ci_sign=a2765fa9ff0e7e96465d26ae8fb10a38c345d12f
IRFS4321TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
40+1.82 EUR
42+1.72 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
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