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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
48+1.5 EUR
50+1.43 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 35
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IPA50R280CEXKSA2 IPA50R280CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDED9A02745B1CC&compId=IPA50R280CE-DTE.pdf?ci_sign=a066060a8e4fa79cb0804ec9d84befd498ce3cdc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 30.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
66+1.1 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 35
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IPA50R950CEXKSA2 IPA50R950CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDC265D9431CC&compId=IPA50R950CE-DTE.pdf?ci_sign=2024861169eaf55680772217cf6cf99de93e0ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Power dissipation: 25.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
113+0.63 EUR
Mindestbestellmenge: 95
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IPA50R250CPXKSA1 IPA50R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE91C89A0F71CC&compId=IPA50R250CP-DTE.pdf?ci_sign=0316e1852350f0edf6d6295d7a00b4c2acf40bde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
32+2.27 EUR
34+2.16 EUR
Mindestbestellmenge: 22
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IPA50R190CEXKSA2 IPA50R190CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDF08C2E171CC&compId=IPA50R190CE-DTE.pdf?ci_sign=e005fb1f8201a70c20ce97ed35abebd84cf20329 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R199CPXKSA1 IPA50R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE94F4F51651CC&compId=IPA50R199CP-DTE.pdf?ci_sign=454170940fbb00506e16056806a3aff41185a47b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R500CEXKSA2 IPA50R500CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDA485961D1CC&compId=IPA50R500CE-DTE.pdf?ci_sign=bebb744a20f727ec0b8f0c747fb2266d676ae43c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R399CPXKSA1 IPA50R399CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE8B1E4535F1CC&compId=IPA50R399CP-DTE.pdf?ci_sign=42760d96673f7b515b2b7d8fe7e964159cb01c2e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Power dissipation: 8.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R520CPXKSA1 IPA50R520CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE900DBF53D1CC&compId=IPA50R520CP-DTE.pdf?ci_sign=48b324500d98190fb60fd8261ca2a53504008c15 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R800CEXKSA2 IPA50R800CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE17E8DD7F1CC&compId=IPA50R800CE-DTE.pdf?ci_sign=e60562202a376529f147e9141e1e4c6bd962109d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB110N20N3LF IPB110N20N3LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8F45FEA3211C&compId=IPP110N20NA-DTE.pdf?ci_sign=70b94064ff7df98367394afbee4bceb42f627658 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSS126IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.067 EUR
Mindestbestellmenge: 3000
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IPB019N06L3GATMA1 IPB019N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
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IPB019N08N3G
+1
 		IPB019N08N3G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAB6DE35C77DE27&compId=IPB019N08N3G-DTE.pdf?ci_sign=07ce8f1173d501dc930f45ad7fa2fde175466987 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB019N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.99 EUR
Mindestbestellmenge: 1000
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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
65+1.11 EUR
98+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 54
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IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA531EA7A68A143&compId=IPD80R900P7.pdf?ci_sign=af71fb00aaf71f68f1b9472ad9adb4d9ef96b672 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
56+1.28 EUR
93+0.78 EUR
98+0.74 EUR
100+0.73 EUR
1000+0.72 EUR
2500+0.71 EUR
Mindestbestellmenge: 47
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE698C6F5A53D1&compId=IPN80R900P7.pdf?ci_sign=1cb3ac008409bbbe434f89ad91f7ebd4ca924304 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
41+1.74 EUR
52+1.39 EUR
55+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 37
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BFP640FH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
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2ED300C17SROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Case: AG-EICE
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Application: for medium and high power application
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™; SiC
Topology: IGBT half-bridge
Voltage class: 1.7kV
Type of semiconductor module: gate driver board
Mounting: PCB
Operating temperature: -25...85°C
Produkt ist nicht verfügbar
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2ED300C17STROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Produkt ist nicht verfügbar
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IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 INFINEON TECHNOLOGIES Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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IPLU300N04S4R8XTMA1 INFINEON TECHNOLOGIES IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+4.28 EUR
Mindestbestellmenge: 2000
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698F4A16FDCE11C&compId=IPD025N06N-DTE.pdf?ci_sign=4dbecac78d95e03a4f1e5519dd4a358c3fbeeacd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1666 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
1115+0.064 EUR
1260+0.057 EUR
1455+0.049 EUR
1540+0.046 EUR
Mindestbestellmenge: 725
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IAUC60N04S6L030HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L045HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N031HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N044ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N050HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BCV62BE6327HTSA1 INFINEON TECHNOLOGIES bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230 Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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F475R06W1E3BOMA1 INFINEON TECHNOLOGIES Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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BSC011N03LSATMA1 BSC011N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.1mΩ
Mounting: SMD
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSC011N03LSIATMA1 BSC011N03LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.1mΩ
Mounting: SMD
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
84+0.86 EUR
98+0.74 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.39 EUR
Mindestbestellmenge: 65
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BAS12507WH6327XTSA1 BAS12507WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
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TLE9250XSJXUMA1 TLE9250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F0D2A09A53D6&compId=TLE9250X.pdf?ci_sign=6fe83aa8e5c15628008a3e39793af6518485ff06 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B7D453D3C213D6&compId=TLE9250.pdf?ci_sign=27ba1db29d95de7cb919defc054a8b5952db1824 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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IRFHM9331TRPBF IRFHM9331TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BBF9CE5E22F1A303005056AB0C4F&compId=irfhm9331pbf.pdf?ci_sign=8cc3c5ff5376bc1ed9debc3ee244e7b25088f040 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Power dissipation: 2.8W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
107+0.67 EUR
203+0.35 EUR
215+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 95
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IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BAE9CF58A4F1A303005056AB0C4F&compId=irfh9310pbf.pdf?ci_sign=48812bd2ff057ffc8ba4f95f0f18c126be688947 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
48+1.52 EUR
61+1.19 EUR
65+1.12 EUR
250+1.07 EUR
Mindestbestellmenge: 40
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R1K0CEATMA1 IPN70R1K0CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
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S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRF7241TRPBF IRF7241TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 41mΩ
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
84+0.85 EUR
93+0.77 EUR
109+0.66 EUR
120+0.6 EUR
Mindestbestellmenge: 73
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IRF7853TRPBF IRF7853TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ACADC1744FF1A303005056AB0C4F&compId=irf7853pbf.pdf?ci_sign=762e5bbe579c52533e9d1ea151045720ed42c301 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
69+1.04 EUR
111+0.65 EUR
117+0.61 EUR
2000+0.6 EUR
Mindestbestellmenge: 50
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IRF8714TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7534PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
48+1.5 EUR
50+1.43 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 35
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IPA50R280CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDED9A02745B1CC&compId=IPA50R280CE-DTE.pdf?ci_sign=a066060a8e4fa79cb0804ec9d84befd498ce3cdc
IPA50R280CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 30.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
66+1.1 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R950CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDC265D9431CC&compId=IPA50R950CE-DTE.pdf?ci_sign=2024861169eaf55680772217cf6cf99de93e0ce2
IPA50R950CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Power dissipation: 25.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
113+0.63 EUR
Mindestbestellmenge: 95
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IPA50R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE91C89A0F71CC&compId=IPA50R250CP-DTE.pdf?ci_sign=0316e1852350f0edf6d6295d7a00b4c2acf40bde
IPA50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
32+2.27 EUR
34+2.16 EUR
Mindestbestellmenge: 22
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IPA50R190CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDF08C2E171CC&compId=IPA50R190CE-DTE.pdf?ci_sign=e005fb1f8201a70c20ce97ed35abebd84cf20329
IPA50R190CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE94F4F51651CC&compId=IPA50R199CP-DTE.pdf?ci_sign=454170940fbb00506e16056806a3aff41185a47b
IPA50R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R500CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDA485961D1CC&compId=IPA50R500CE-DTE.pdf?ci_sign=bebb744a20f727ec0b8f0c747fb2266d676ae43c
IPA50R500CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R399CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE8B1E4535F1CC&compId=IPA50R399CP-DTE.pdf?ci_sign=42760d96673f7b515b2b7d8fe7e964159cb01c2e
IPA50R399CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Power dissipation: 8.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R520CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE900DBF53D1CC&compId=IPA50R520CP-DTE.pdf?ci_sign=48b324500d98190fb60fd8261ca2a53504008c15
IPA50R520CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R800CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE17E8DD7F1CC&compId=IPA50R800CE-DTE.pdf?ci_sign=e60562202a376529f147e9141e1e4c6bd962109d
IPA50R800CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB110N20N3LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9
IPB110N20N3LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP110N20NAAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8F45FEA3211C&compId=IPP110N20NA-DTE.pdf?ci_sign=70b94064ff7df98367394afbee4bceb42f627658
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead
IPB019N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N08N3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAB6DE35C77DE27&compId=IPB019N08N3G-DTE.pdf?ci_sign=07ce8f1173d501dc930f45ad7fa2fde175466987
IPB019N08N3G
+1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N08N5ATMA1 Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.99 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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IPU80R900P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9
IPU80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
65+1.11 EUR
98+0.74 EUR
103+0.7 EUR
Mindestbestellmenge: 54
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IPD80R900P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA531EA7A68A143&compId=IPD80R900P7.pdf?ci_sign=af71fb00aaf71f68f1b9472ad9adb4d9ef96b672
IPD80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
56+1.28 EUR
93+0.78 EUR
98+0.74 EUR
100+0.73 EUR
1000+0.72 EUR
2500+0.71 EUR
Mindestbestellmenge: 47
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IPN80R900P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE698C6F5A53D1&compId=IPN80R900P7.pdf?ci_sign=1cb3ac008409bbbe434f89ad91f7ebd4ca924304
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 7W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI05I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI05I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -0.5...0.5A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
41+1.74 EUR
52+1.39 EUR
55+1.32 EUR
250+1.27 EUR
Mindestbestellmenge: 37
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BFP640FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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2ED300C17SROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Case: AG-EICE
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Application: for medium and high power application
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™; SiC
Topology: IGBT half-bridge
Voltage class: 1.7kV
Type of semiconductor module: gate driver board
Mounting: PCB
Operating temperature: -25...85°C
Produkt ist nicht verfügbar
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2ED300C17STROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Produkt ist nicht verfügbar
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IRFH5250DTRPBF pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8
IRFH5250DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250TRPBF pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369
IRFH5250TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R8XTMA1 IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+4.28 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IPD025N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698F4A16FDCE11C&compId=IPD025N06N-DTE.pdf?ci_sign=4dbecac78d95e03a4f1e5519dd4a358c3fbeeacd
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1666 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BC858BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
725+0.099 EUR
1115+0.064 EUR
1260+0.057 EUR
1455+0.049 EUR
1540+0.046 EUR
Mindestbestellmenge: 725
Im Einkaufswagen  Stück im Wert von  UAH
BC858CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
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IPB031N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB031NE7N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV62BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24
BCV62BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV62BE6327HTSA1 bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC011N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520
BSC011N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.1mΩ
Mounting: SMD
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC011N03LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d
BSC011N03LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.1mΩ
Mounting: SMD
Power dissipation: 96W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
84+0.86 EUR
98+0.74 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.39 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BAS12507WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00
BAS12507WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F0D2A09A53D6&compId=TLE9250X.pdf?ci_sign=6fe83aa8e5c15628008a3e39793af6518485ff06
TLE9250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B7D453D3C213D6&compId=TLE9250.pdf?ci_sign=27ba1db29d95de7cb919defc054a8b5952db1824
TLE9250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361
TLE9250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM9331TRPBF pVersion=0046&contRep=ZT&docId=E221BBF9CE5E22F1A303005056AB0C4F&compId=irfhm9331pbf.pdf?ci_sign=8cc3c5ff5376bc1ed9debc3ee244e7b25088f040
IRFHM9331TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Power dissipation: 2.8W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
107+0.67 EUR
203+0.35 EUR
215+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
IRFH9310TRPBF pVersion=0046&contRep=ZT&docId=E221BAE9CF58A4F1A303005056AB0C4F&compId=irfh9310pbf.pdf?ci_sign=48812bd2ff057ffc8ba4f95f0f18c126be688947
IRFH9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
48+1.52 EUR
61+1.19 EUR
65+1.12 EUR
250+1.07 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R1K0CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea
IPN70R1K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
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S25FS064SAGNFB033
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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IPD70R900P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b
IPD70R900P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRF7241TRPBF description pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f
IRF7241TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 41mΩ
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
84+0.85 EUR
93+0.77 EUR
109+0.66 EUR
120+0.6 EUR
Mindestbestellmenge: 73
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IRF7853TRPBF pVersion=0046&contRep=ZT&docId=E221ACADC1744FF1A303005056AB0C4F&compId=irf7853pbf.pdf?ci_sign=762e5bbe579c52533e9d1ea151045720ed42c301
IRF7853TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
69+1.04 EUR
111+0.65 EUR
117+0.61 EUR
2000+0.6 EUR
Mindestbestellmenge: 50
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IRF8714TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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