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IPB014N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Gate-source voltage: 20V
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.06 EUR
Mindestbestellmenge: 800
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IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D8C91B1A2E143&compId=IAUT300N08S5N012.pdf?ci_sign=a7ed1dfb1242275fc40ac963e384fc5474eb3a2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5C4837FC78BF&compId=IAUT200N08S5N023.pdf?ci_sign=e5ceb0a849d4b34f35c5dfe8cc4826d69c46c355 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Power dissipation: 200W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT240N08S5N019ATMA1 IAUT240N08S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5F158E68B8BF&compId=IAUT240N08S5N019.pdf?ci_sign=489748605735eacfc3f8b132fe907392a2a67dbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA3F7795BC38BF&compId=IAUT300N10S5N015.pdf?ci_sign=e3a82d26f35a79f1a1297b5f8c8713126b20d22b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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CYW20706UA2KFFB4GT INFINEON TECHNOLOGIES download Category: IoT (WiFi/Bluetooth) modules
Description: Module: WiFi
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+5.41 EUR
Mindestbestellmenge: 2500
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BCR198E6327HTSA1 INFINEON TECHNOLOGIES bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.048 EUR
Mindestbestellmenge: 3000
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BCR198WH6327XTSA1 INFINEON TECHNOLOGIES bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Mounting: SMD
Case: SC70; SOT323
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 70
Application: automotive industry
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 190MHz
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.054 EUR
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IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
auf Bestellung 1000 Stücke:
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1000+4.05 EUR
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ISC080N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.16 EUR
Mindestbestellmenge: 5000
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IFX1050G IFX1050G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC30C27BD2AEA14&compId=IFX1050G.pdf?ci_sign=3b19f6f23684a12e8a704a9094175cf74ba83fe2 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC4A423E6C873D7&compId=AUIRGx4062D1.pdf?ci_sign=af7171373d8d0f811877b4635ab8c5c885c6ede0 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Case: TO262
Technology: Trench
auf Bestellung 5 Stücke:
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5+14.3 EUR
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22271D69DD6D2F1A303005056AB0C4F&compId=irgs4062dpbf.pdf?ci_sign=f1806f5a728b86898d073ed3e7f80a224519b756 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Produkt ist nicht verfügbar
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T501N70TOHXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB4847A69CF6160C7&compId=T501N70TOHXPSA1.pdf?ci_sign=32f065570e51f46bdba34fdd7f20fb2249109b1d Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Gate current: 350mA
Load current: 640A
Max. load current: 1kA
Max. off-state voltage: 7kV
Max. forward impulse current: 13.5kA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
459+0.16 EUR
601+0.12 EUR
Mindestbestellmenge: 358
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5695EBD4E4143&compId=IPD90N04S304.pdf?ci_sign=744e6d18ceef1d2e8f817da583e63cd71a15d851 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
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IPB024N08N5ATMA1 IPB024N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSC024NE2LSATMA1 BSC024NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
On-state resistance: 2.4mΩ
Power dissipation: 48W
Gate-source voltage: ±20V
Case: PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IR2130JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+5.93 EUR
Mindestbestellmenge: 500
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IRF7493TRPBF IRF7493TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A5F4DDE2DCF1A303005056AB0C4F&compId=irf7493pbf.pdf?ci_sign=c0b1b5129242a232c27549a49cf8e89a1f378ec3 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E70C51032B3D1&compId=TD330N16KOF.pdf?ci_sign=cf0811a4f9d14c4abaff1a75e1d02469aca9fb02 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
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TT330N16KOF TT330N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D35FD476572745&compId=TT330N16KOF.pdf?ci_sign=8482230765bc41badec92cc3d5f0c1ef031b3b33 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
Technology: MOSFET
auf Bestellung 7956 Stücke:
Lieferzeit 14-21 Tag (e)
30+5.69 EUR
90+5.12 EUR
Mindestbestellmenge: 30
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ISS55EP06LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISS55EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730fdf473a0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 180mA; 400mW; SOT23
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 5.5Ω
Mounting: SMD
Gate charge: 590pC
Kind of channel: enhancement
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.036 EUR
Mindestbestellmenge: 3000
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IRS2127STRPBF INFINEON TECHNOLOGIES irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+0.77 EUR
Mindestbestellmenge: 2500
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.99 EUR
Mindestbestellmenge: 3000
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BSZ065N03LSATMA1 BSZ065N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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ISZ065N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.3 EUR
Mindestbestellmenge: 5000
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IPU50R1K4CEBKMA1 IPU50R1K4CEBKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE519BBDCDF1CC&compId=IPU50R1K4CE-DTE.pdf?ci_sign=75cba2a3bf7b157346c62f49d7e4ba3c18a3920c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Kind of package: tube
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Case: IPAK
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
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IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C33D8F8C211C&compId=IPB011N04LG-DTE.pdf?ci_sign=886231efb9054af0d16648b0abff6e958593f7ba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C55CF5FE411C&compId=IPB011N04NG-dte.pdf?ci_sign=afef0bed750b02c09e3dc1ba463cc912cc3f0be4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.89 EUR
Mindestbestellmenge: 50
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BDP949H6327XTSA1 INFINEON TECHNOLOGIES bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 5W
Case: SOT223-4; TO261-4
Mounting: SMD
Frequency: 100MHz
Application: automotive industry
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.44 EUR
Mindestbestellmenge: 1000
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BSS169IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.073 EUR
Mindestbestellmenge: 3000
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IRL2910STRLPBF IRL2910STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22273AA1BBA60F1A303005056AB0C4F&compId=irl2910spbf.pdf?ci_sign=e0e455514ca6d17f7b1f43e807163325c855281b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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CY14B256PA-SFXI INFINEON TECHNOLOGIES Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Frequency: 40MHz
Case: SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY62136EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136FV30LL-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV18LL-55BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV30LL-55ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...125°C
Access time: 55ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62138EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=45534 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZAXAT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZAXIT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Gate-source voltage: 20V
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.06 EUR
Mindestbestellmenge: 800
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IAUT300N08S5N012ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D8C91B1A2E143&compId=IAUT300N08S5N012.pdf?ci_sign=a7ed1dfb1242275fc40ac963e384fc5474eb3a2f
IAUT300N08S5N012ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT200N08S5N023ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5C4837FC78BF&compId=IAUT200N08S5N023.pdf?ci_sign=e5ceb0a849d4b34f35c5dfe8cc4826d69c46c355
IAUT200N08S5N023ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Power dissipation: 200W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT240N08S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5F158E68B8BF&compId=IAUT240N08S5N019.pdf?ci_sign=489748605735eacfc3f8b132fe907392a2a67dbe
IAUT240N08S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA3F7795BC38BF&compId=IAUT300N10S5N015.pdf?ci_sign=e3a82d26f35a79f1a1297b5f8c8713126b20d22b
IAUT300N10S5N015ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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CYW20706UA2KFFB4GT download
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: WiFi
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+5.41 EUR
Mindestbestellmenge: 2500
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BCR198E6327HTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.048 EUR
Mindestbestellmenge: 3000
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BCR198WH6327XTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Mounting: SMD
Case: SC70; SOT323
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 70
Application: automotive industry
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 190MHz
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.054 EUR
Mindestbestellmenge: 3000
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.05 EUR
Mindestbestellmenge: 1000
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ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
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IFX1050G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC30C27BD2AEA14&compId=IFX1050G.pdf?ci_sign=3b19f6f23684a12e8a704a9094175cf74ba83fe2
IFX1050G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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AUIRGSL4062D1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC4A423E6C873D7&compId=AUIRGx4062D1.pdf?ci_sign=af7171373d8d0f811877b4635ab8c5c885c6ede0
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Case: TO262
Technology: Trench
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IRGSL4062DPBF pVersion=0046&contRep=ZT&docId=E22271D69DD6D2F1A303005056AB0C4F&compId=irgs4062dpbf.pdf?ci_sign=f1806f5a728b86898d073ed3e7f80a224519b756
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Produkt ist nicht verfügbar
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T501N70TOHXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB4847A69CF6160C7&compId=T501N70TOHXPSA1.pdf?ci_sign=32f065570e51f46bdba34fdd7f20fb2249109b1d
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Gate current: 350mA
Load current: 640A
Max. load current: 1kA
Max. off-state voltage: 7kV
Max. forward impulse current: 13.5kA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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BC847BE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
459+0.16 EUR
601+0.12 EUR
Mindestbestellmenge: 358
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IPD90N04S304ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5695EBD4E4143&compId=IPD90N04S304.pdf?ci_sign=744e6d18ceef1d2e8f817da583e63cd71a15d851
IPD90N04S304ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB024N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1
IPB024N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSC024NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181
BSC024NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
On-state resistance: 2.4mΩ
Power dissipation: 48W
Gate-source voltage: ±20V
Case: PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IR2130JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+5.93 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IRF7493TRPBF description pVersion=0046&contRep=ZT&docId=E221A5F4DDE2DCF1A303005056AB0C4F&compId=irf7493pbf.pdf?ci_sign=c0b1b5129242a232c27549a49cf8e89a1f378ec3
IRF7493TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TD330N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9E70C51032B3D1&compId=TD330N16KOF.pdf?ci_sign=cf0811a4f9d14c4abaff1a75e1d02469aca9fb02
TD330N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
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TT330N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE787D35FD476572745&compId=TT330N16KOF.pdf?ci_sign=8482230765bc41badec92cc3d5f0c1ef031b3b33
TT330N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
Technology: MOSFET
auf Bestellung 7956 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+5.69 EUR
90+5.12 EUR
Mindestbestellmenge: 30
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ISS55EP06LMXTSA1 Infineon-ISS55EP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730fdf473a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 180mA; 400mW; SOT23
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 5.5Ω
Mounting: SMD
Gate charge: 590pC
Kind of channel: enhancement
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.036 EUR
Mindestbestellmenge: 3000
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IRS2127STRPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.99 EUR
Mindestbestellmenge: 3000
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BSZ065N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870
BSZ065N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
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IPU50R1K4CEBKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE519BBDCDF1CC&compId=IPU50R1K4CE-DTE.pdf?ci_sign=75cba2a3bf7b157346c62f49d7e4ba3c18a3920c
IPU50R1K4CEBKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Kind of package: tube
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Case: IPAK
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
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IPB011N04LGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C33D8F8C211C&compId=IPB011N04LG-DTE.pdf?ci_sign=886231efb9054af0d16648b0abff6e958593f7ba
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5C55CF5FE411C&compId=IPB011N04NG-dte.pdf?ci_sign=afef0bed750b02c09e3dc1ba463cc912cc3f0be4
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.89 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BDP949H6327XTSA1 bdp947_bdp949_bdp953.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156147b63b1f55
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 5W
Case: SOT223-4; TO261-4
Mounting: SMD
Frequency: 100MHz
Application: automotive industry
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.44 EUR
Mindestbestellmenge: 1000
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BSS169IXTSA1 Infineon-BSS169I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a42ad9911d52
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.073 EUR
Mindestbestellmenge: 3000
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IRL2910STRLPBF pVersion=0046&contRep=ZT&docId=E22273AA1BBA60F1A303005056AB0C4F&compId=irl2910spbf.pdf?ci_sign=e0e455514ca6d17f7b1f43e807163325c855281b
IRL2910STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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CY14B256PA-SFXI Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Frequency: 40MHz
Case: SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136FV30LL-45BVXIT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137EV30LL-45ZSXIT Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV18LL-55BVXIT Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV30LL-45ZSXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV30LL-55ZSXET download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...125°C
Access time: 55ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62138EV30LL-45BVXIT ?docID=45534
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZAXAT ?docID=49121
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZAXIT ?docID=49121
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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