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CY62136EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62136EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62136FV30LL-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62136FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62137FV18LL-55BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62137FV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62137FV30LL-55ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...125°C
Access time: 55ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62138EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=45534 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZAXAT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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CY62138FV30LL-45ZAXIT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
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BFP410H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Current gain: 60
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.31 EUR
Mindestbestellmenge: 3000
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BCR402UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR402-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524e8f40619 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
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IRFP7537PBF IRFP7537PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6AB4B9801A1EC&compId=irfp7537pbf.pdf?ci_sign=6b3b92d1b2a36c829c9ffd0c2c2c93b01573c55c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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IPP023N04NGXKSA1 IPP023N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96896E26C211C&compId=IPP023N04NG-DTE.pdf?ci_sign=123ca1164b118b381a0221555f5c278b376013f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Drain-source voltage: 40V
Drain current: 90A
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 167W
Produkt ist nicht verfügbar
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IRF1018ESTRLPBF IRF1018ESTRLPBF INFINEON TECHNOLOGIES irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 56A
Power dissipation: 110W
Pulsed drain current: 315A
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
48+1.52 EUR
53+1.37 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 40
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BCR521E6327HTSA1 BCR521E6327HTSA1 INFINEON TECHNOLOGIES bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
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BTS70082EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7008-2EPA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590212356876b1 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7.5A; Ch: 2; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 7.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 9mΩ
Active logical level: high
Operating temperature: -40...150°C
Supply voltage: 4.1...28V
Integrated circuit features: thermal protection
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.76 EUR
Mindestbestellmenge: 3000
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE76C04CE7E469&compId=TT250N18KOF.pdf?ci_sign=a51bfa528b7ada5ee438c08be9b69cdbf4b92422 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+250.25 EUR
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
On-state resistance: 4.7mΩ
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.39 EUR
Mindestbestellmenge: 2000
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BFR181E6327HTSA1 BFR181E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
231+0.31 EUR
298+0.24 EUR
447+0.16 EUR
575+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 167
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CY9BF324MPMC-G-MNE2 INFINEON TECHNOLOGIES Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
119+7.08 EUR
Mindestbestellmenge: 119
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IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA7EA488D59D3D7&compId=IRS2302SPBF.pdf?ci_sign=3c1e65303fb8c7d19a0206b3213cfa65210e5079 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 650ns
Power: 625mW
Supply voltage: 5...20V DC
Number of channels: 2
Voltage class: 600V
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
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BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 8869 Stücke:
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186+0.39 EUR
272+0.26 EUR
343+0.21 EUR
410+0.17 EUR
486+0.15 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 186
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IPP50R250CPXKSA1 IPP50R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE5D07AAE3D1CC&compId=IPP50R250CP-DTE.pdf?ci_sign=841f118439f8bb76751cdb2c4c940e074179930b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 500V
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
30+2.39 EUR
32+2.26 EUR
50+2.23 EUR
Mindestbestellmenge: 28
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IPB50R250CPATMA1 IPB50R250CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE18A4AE4D71CC&compId=IPB50R250CP-DTE.pdf?ci_sign=b3cb3c08e907a1bd70e009ec0d68109bdbd7b8b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 500V
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPB60R250CPATMA1 IPB60R250CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B593F6A6CDA791BF&compId=IPB60R250CP-DTE.pdf?ci_sign=a0f6952ff533d51f967a86c9b5511cde6e7eda11 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Case: PG-TO263-3-2
Produkt ist nicht verfügbar
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IPI50R250CPXKSA1 IPI50R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE49E9B172F1CC&compId=IPI50R250CP-DTE.pdf?ci_sign=b00048622b8be3c336ffe1d55a7b001c27655213 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 500V
Case: PG-TO262-3
Produkt ist nicht verfügbar
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IPI60R250CPAKSA1 IPI60R250CPAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594293782B171BF&compId=IPI60R250CP-DTE.pdf?ci_sign=80b33f6c9537f9e385eb1a8734bae5eb6131a853 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Mounting: THT
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Case: PG-TO262-3
Produkt ist nicht verfügbar
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IPP60R250CPXKSA1 IPP60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Mounting: THT
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Case: PG-TO220-3
Kind of package: tube
Produkt ist nicht verfügbar
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IHW20N140R5LXKSA1 IHW20N140R5LXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD095B57C4A3FC3A0E1&compId=IHW20N140R5L.pdf?ci_sign=36f08a8a9526d22d32d2220dcbfe250436833e42 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.4kV; 38A; 106W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.4kV
Collector current: 38A
Power dissipation: 106W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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BSZ031NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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BSC146N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
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1EDC05I12AHXUMA1 1EDC05I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Mounting: SMD
Case: PG-DSO-8
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Kind of package: reel; tape
Topology: single transistor
Output current: -0.5...0.5A
Produkt ist nicht verfügbar
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CY14B104NA-BA45XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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CY14B104NA-BA45XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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IKB06N60TATMA1 IKB06N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
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IGD06N60TATMA1 IGD06N60TATMA1 INFINEON TECHNOLOGIES INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
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IKA06N60TXKSA1 IKA06N60TXKSA1 INFINEON TECHNOLOGIES IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
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IKD06N60RFATMA1 IKD06N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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AIHD06N60RATMA1 AIHD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA4DCD10CAB820&compId=AIHD06N60R.pdf?ci_sign=0a279d67df7c76aa1eaddf5e0c72b6693c0e43bf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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AIHD06N60RFATMA1 AIHD06N60RFATMA1 INFINEON TECHNOLOGIES Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IDP40E65D2XKSA1 IDP40E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA27167AEA5C469&compId=IDP40E65D2XKSA1.pdf?ci_sign=f8e8a4580ec72b41b61a42a3684ed93e1979a88d Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
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36+1.99 EUR
40+1.8 EUR
Mindestbestellmenge: 30
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T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99B59F310C17A0D3&compId=T3160N.pdf?ci_sign=5314bc8cdf0befb303b0dd5696c72eb466fefc36 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Case: BG-T11126K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 63kA
Features of semiconductor devices: phase controlled thyristor (PCT)
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T3160N16TOFVTXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99B59F310C17A0D3&compId=T3160N.pdf?ci_sign=5314bc8cdf0befb303b0dd5696c72eb466fefc36 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Case: BG-T11126K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 63kA
Features of semiconductor devices: phase controlled thyristor (PCT)
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T1590N28TOFVTXPSA1 INFINEON TECHNOLOGIES Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Case: BG-T10026K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 32kA
Features of semiconductor devices: phase controlled thyristor (PCT)
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T1190N16TOFVTXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB1CF2E5AFBF600D6&compId=T1190N_ser.pdf?ci_sign=19de6d3fb5dd8fc4b9694ce138ba6151a8e11d21 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 22.5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4361A78EA11C&compId=BSZ16DN25NS3G-DTE.pdf?ci_sign=1725697285a132145f60b7ce4ef14c6e8c925a67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC5D8650BC411C&compId=BSZ42DN25NS3G-DTE.pdf?ci_sign=d9b9070310c5f75946aca5576d4f831b39aa87a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 5A
On-state resistance: 0.425Ω
Power dissipation: 33.8W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
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BFP196WNH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
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3000+0.11 EUR
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PVG612AS-TPBF INFINEON TECHNOLOGIES pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
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750+12.64 EUR
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BTS500851TMBAKSA1 INFINEON TECHNOLOGIES Infineon-BTS50085-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa435af031147 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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IRFR7446TRPBF IRFR7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD1497D1E795EA&compId=IRFR7446TRPBF.pdf?ci_sign=24c156d8292f16630f64213370799026e4835bd9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Produkt ist nicht verfügbar
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GS66502BMRXUSA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 100V
Power dissipation: 260W
Case: TO220AB
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57+1.27 EUR
72+1 EUR
76+0.94 EUR
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IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
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CY62136FV30LL-45BVXIT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
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CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62137EV30LL-45ZSXIT Infineon-CY62137EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8fb93241&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV18LL-55BVXIT Infineon-CY62137FV18_MoBL(R)_2-Mbit_(128_K_x_16)_Static_RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe93e13249
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV30LL-45BVXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV30LL-45ZSXIT Infineon-CY62137FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9762324f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62137FV30LL-55ZSXET download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 55ns; TSOP44 II; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...125°C
Access time: 55ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138EV30LL-45BVXIT ?docID=45534
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FV30LL-45ZAXAT ?docID=49121
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FV30LL-45ZAXIT ?docID=49121
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Kind of package: reel; tape
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: STSOP32
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP410H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Current gain: 60
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BCR402UE6327HTSA1 Infineon-BCR402-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524e8f40619
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP7537PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6AB4B9801A1EC&compId=irfp7537pbf.pdf?ci_sign=6b3b92d1b2a36c829c9ffd0c2c2c93b01573c55c
IRFP7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPP023N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96896E26C211C&compId=IPP023N04NG-DTE.pdf?ci_sign=123ca1164b118b381a0221555f5c278b376013f2
IPP023N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Drain-source voltage: 40V
Drain current: 90A
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 167W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1018ESTRLPBF irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
IRF1018ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 56A
Power dissipation: 110W
Pulsed drain current: 315A
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
48+1.52 EUR
53+1.37 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BCR521E6327HTSA1 bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308
BCR521E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS70082EPAXUMA1 Infineon-BTS7008-2EPA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590212356876b1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7.5A; Ch: 2; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 7.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 9mΩ
Active logical level: high
Operating temperature: -40...150°C
Supply voltage: 4.1...28V
Integrated circuit features: thermal protection
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.76 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TT250N18KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE76C04CE7E469&compId=TT250N18KOF.pdf?ci_sign=a51bfa528b7ada5ee438c08be9b69cdbf4b92422
TT250N18KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Case: BG-PB50-1
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+250.25 EUR
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IPD047N03LF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
On-state resistance: 4.7mΩ
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.39 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
BFR181E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310
BFR181E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
231+0.31 EUR
298+0.24 EUR
447+0.16 EUR
575+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 167
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CY9BF324MPMC-G-MNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
119+7.08 EUR
Mindestbestellmenge: 119
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IRS2302SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA7EA488D59D3D7&compId=IRS2302SPBF.pdf?ci_sign=3c1e65303fb8c7d19a0206b3213cfa65210e5079
IRS2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 200ns
Turn-on time: 650ns
Power: 625mW
Supply voltage: 5...20V DC
Number of channels: 2
Voltage class: 600V
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS83PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928D6EDF37B1CC&compId=BSS83PH6327XTSA1-dte.pdf?ci_sign=af6b6a3bc6b9093bad4b1410edb90e4f35d69241
BSS83PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 8869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
272+0.26 EUR
343+0.21 EUR
410+0.17 EUR
486+0.15 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 186
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IPP50R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE5D07AAE3D1CC&compId=IPP50R250CP-DTE.pdf?ci_sign=841f118439f8bb76751cdb2c4c940e074179930b
IPP50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 500V
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
30+2.39 EUR
32+2.26 EUR
50+2.23 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IPB50R250CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE18A4AE4D71CC&compId=IPB50R250CP-DTE.pdf?ci_sign=b3cb3c08e907a1bd70e009ec0d68109bdbd7b8b1
IPB50R250CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 500V
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPB60R250CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B593F6A6CDA791BF&compId=IPB60R250CP-DTE.pdf?ci_sign=a0f6952ff533d51f967a86c9b5511cde6e7eda11
IPB60R250CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Case: PG-TO263-3-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI50R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE49E9B172F1CC&compId=IPI50R250CP-DTE.pdf?ci_sign=b00048622b8be3c336ffe1d55a7b001c27655213
IPI50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 500V
Case: PG-TO262-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R250CPAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594293782B171BF&compId=IPI60R250CP-DTE.pdf?ci_sign=80b33f6c9537f9e385eb1a8734bae5eb6131a853
IPI60R250CPAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Mounting: THT
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Case: PG-TO262-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0
IPP60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Mounting: THT
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Case: PG-TO220-3
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N140R5LXKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD095B57C4A3FC3A0E1&compId=IHW20N140R5L.pdf?ci_sign=36f08a8a9526d22d32d2220dcbfe250436833e42
IHW20N140R5LXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.4kV; 38A; 106W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.4kV
Collector current: 38A
Power dissipation: 106W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
39+1.84 EUR
41+1.74 EUR
Mindestbestellmenge: 27
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BSZ031NE2LS5ATMA1 Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.48 EUR
Mindestbestellmenge: 5000
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BSC146N10LS5ATMA1 Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.69 EUR
Mindestbestellmenge: 5000
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1EDC05I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC05I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Mounting: SMD
Case: PG-DSO-8
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Kind of package: reel; tape
Topology: single transistor
Output current: -0.5...0.5A
Produkt ist nicht verfügbar
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CY14B104NA-BA45XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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CY14B104NA-BA45XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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IKB06N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD343675457820&compId=IKB06N60T.pdf?ci_sign=dc014062b346c713605c9ed411198b67f0f4b331
IKB06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKD06N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD9D4B1E49820&compId=IKD06N60RF.pdf?ci_sign=96e97126e13c6c0e3ebae3677a35248be6cea775
IKD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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AIHD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA4DCD10CAB820&compId=AIHD06N60R.pdf?ci_sign=0a279d67df7c76aa1eaddf5e0c72b6693c0e43bf
AIHD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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AIHD06N60RFATMA1
AIHD06N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IDP40E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA27167AEA5C469&compId=IDP40E65D2XKSA1.pdf?ci_sign=f8e8a4580ec72b41b61a42a3684ed93e1979a88d
IDP40E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
36+1.99 EUR
40+1.8 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
T3160N18TOFVTXPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99B59F310C17A0D3&compId=T3160N.pdf?ci_sign=5314bc8cdf0befb303b0dd5696c72eb466fefc36
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Case: BG-T11126K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 63kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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T3160N16TOFVTXPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD99B59F310C17A0D3&compId=T3160N.pdf?ci_sign=5314bc8cdf0befb303b0dd5696c72eb466fefc36
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Case: BG-T11126K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 63kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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T1590N28TOFVTXPSA1 Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Case: BG-T10026K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 32kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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T1190N16TOFVTXPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB1CF2E5AFBF600D6&compId=T1190N_ser.pdf?ci_sign=19de6d3fb5dd8fc4b9694ce138ba6151a8e11d21
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 22.5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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BSZ16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4361A78EA11C&compId=BSZ16DN25NS3G-DTE.pdf?ci_sign=1725697285a132145f60b7ce4ef14c6e8c925a67
BSZ16DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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BSZ42DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC5D8650BC411C&compId=BSZ42DN25NS3G-DTE.pdf?ci_sign=d9b9070310c5f75946aca5576d4f831b39aa87a8
BSZ42DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 5A
On-state resistance: 0.425Ω
Power dissipation: 33.8W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
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BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BFP196WNH6327XTSA1 Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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PVG612AS-TPBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+12.64 EUR
Mindestbestellmenge: 750
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BTS500851TMBAKSA1 Infineon-BTS50085-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa435af031147
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.09 EUR
Mindestbestellmenge: 50
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IRFR7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD1497D1E795EA&compId=IRFR7446TRPBF.pdf?ci_sign=24c156d8292f16630f64213370799026e4835bd9
IRFR7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 98W
Produkt ist nicht verfügbar
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GS66502BMRXUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+10.95 EUR
Mindestbestellmenge: 250
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IRF8010PBF description pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 100V
Power dissipation: 260W
Case: TO220AB
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
57+1.27 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 46
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IRFR2405TRPBF description pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2
IRFR2405TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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