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CY14B104M-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B104M-ZSP25XIT INFINEON TECHNOLOGIES ?docID=44757 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B104NA-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B104NA-ZSP25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B108M-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B108M-ZSP25XIT INFINEON TECHNOLOGIES ?docID=50894 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B108N-ZSP25XI INFINEON TECHNOLOGIES Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B116N-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B116N-ZSP25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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BFR183E6327HTSA1 INFINEON TECHNOLOGIES bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
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IPB030N08N3GATMA1 IPB030N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAFE16A04211C&compId=IPB030N08N3G-DTE.pdf?ci_sign=908c3cc80a30d3cf651dff5baa321b44d762a716 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A1DE2482E11C&compId=BSC030N08NS5-DTE.pdf?ci_sign=e2923a653bbc49ae9f0a658a51ab2dbc6a80e934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB010N06NATMA1 IPB010N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5BF97F99DC11C&compId=IPB010N06N-DTE.pdf?ci_sign=5a04d1893556f28f62233ea5d6be7ff09e050118 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Mounting: SMD
Case: PG-TO263-7
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain current: 180A
Produkt ist nicht verfügbar
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BSZ240N12NS3GATMA1 BSZ240N12NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4064592BE11C&compId=BSZ240N12NS3G-DTE.pdf?ci_sign=8bc4c4584b83edfdf3c81c1c22139f55c4acf4d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
On-state resistance: 24mΩ
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC054N04NSGATMA1 BSC054N04NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C30364D1F0C11C&compId=BSC054N04NSG-DTE.pdf?ci_sign=02f4a91d4cdbcf956c2d10d5c13def34fb97916e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
On-state resistance: 5.4mΩ
Power dissipation: 57W
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSZ034N04LSATMA1 BSZ034N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DFBAB1A7CC11C&compId=BSZ034N04LS-DTE.pdf?ci_sign=f949cc7fd22e98717d29d2031c01c57f8fe57307 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
On-state resistance: 3.4mΩ
Power dissipation: 52W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 40V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FF40A8D2011C&compId=BSB014N04LX3G-DTE.pdf?ci_sign=6832f0b7ea205274644da112008db3155abffb0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
On-state resistance: 1.4mΩ
Power dissipation: 89W
Gate-source voltage: ±20V
Drain current: 180A
Drain-source voltage: 40V
Case: CanPAK™ MX; MG-WDSON-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
On-state resistance: 1.4mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
On-state resistance: 1.4mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Gate-source voltage: 20V
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.06 EUR
Mindestbestellmenge: 800
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CY14B104M-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B104M-ZSP25XIT ?docID=44757
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B104NA-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B104NA-ZSP25XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B108M-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B108M-ZSP25XIT ?docID=50894
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B108N-ZSP25XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B116N-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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CY14B116N-ZSP25XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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BFR183E6327HTSA1 bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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IPB030N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAFE16A04211C&compId=IPB030N08N3G-DTE.pdf?ci_sign=908c3cc80a30d3cf651dff5baa321b44d762a716
IPB030N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC030N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A1DE2482E11C&compId=BSC030N08NS5-DTE.pdf?ci_sign=e2923a653bbc49ae9f0a658a51ab2dbc6a80e934
BSC030N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB010N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5BF97F99DC11C&compId=IPB010N06N-DTE.pdf?ci_sign=5a04d1893556f28f62233ea5d6be7ff09e050118
IPB010N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Mounting: SMD
Case: PG-TO263-7
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain current: 180A
Produkt ist nicht verfügbar
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BSZ240N12NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4064592BE11C&compId=BSZ240N12NS3G-DTE.pdf?ci_sign=8bc4c4584b83edfdf3c81c1c22139f55c4acf4d1
BSZ240N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
On-state resistance: 24mΩ
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC054N04NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C30364D1F0C11C&compId=BSC054N04NSG-DTE.pdf?ci_sign=02f4a91d4cdbcf956c2d10d5c13def34fb97916e
BSC054N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
On-state resistance: 5.4mΩ
Power dissipation: 57W
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSZ034N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DFBAB1A7CC11C&compId=BSZ034N04LS-DTE.pdf?ci_sign=f949cc7fd22e98717d29d2031c01c57f8fe57307
BSZ034N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
On-state resistance: 3.4mΩ
Power dissipation: 52W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 40V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSB014N04LX3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FF40A8D2011C&compId=BSB014N04LX3G-DTE.pdf?ci_sign=6832f0b7ea205274644da112008db3155abffb0c
BSB014N04LX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
On-state resistance: 1.4mΩ
Power dissipation: 89W
Gate-source voltage: ±20V
Drain current: 180A
Drain-source voltage: 40V
Case: CanPAK™ MX; MG-WDSON-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25A9939DDA11C&compId=BSC014N04LS-DTE.pdf?ci_sign=702ca4986b6c1f5e5d8f755d7d5c4d74798c8fd0
BSC014N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
On-state resistance: 1.4mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSC014N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25D852524411C&compId=BSC014N04LSI-DTE.pdf?ci_sign=53868b51fbb5ec3ed88489a6d0c056d375046e73
BSC014N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
On-state resistance: 1.4mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB014N04NF2SATMA1 Infineon-IPB014N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12b8ec6af7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Gate-source voltage: 20V
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.06 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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