Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152098) > Seite 2529 nach 2535
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CY7C1470BV25-250AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470BV33-167AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470BV33-167BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470V25-200AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470V25-200BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470V25-200BZXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470V33-167AXC | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470V33-167AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY7C1470V33-167BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BCX5310H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX5316H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Current gain: 25 Mounting: SMD Frequency: 125MHz Application: automotive industry |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FM25VN10-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Memory organisation: 128kx8bit Clock frequency: 40MHz Type of integrated circuit: FRAM memory Kind of memory: FRAM Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: -16...5V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPP120P04P4L03AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: IPP120P04P4L03AKSA2 |
auf Bestellung 10633 Stücke: Lieferzeit 14-21 Tag (e) |
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CY8C5467LTI-LP003 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR Type of integrated circuit: ARM microcontroller Case: QFN68; QFN Mounting: SMD Number of inputs/outputs: 38 Kind of architecture: Cortex M3 Operating temperature: -40...85°C Number of 16bit timers: 4 Clock frequency: 67MHz Integrated circuit features: DMA; PoR Number of PWM channels: 1 Number of output compare channels: 2 Number of input capture channels: 2 |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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BFS481H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 20mA Power dissipation: 0.175W Case: SOT363 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
ISA220280C03LMDSXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: ISA220280C03LMDSXTMA1 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BB639E7904HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Leakage current: 0.2µA Load current: 20mA Capacitance: 2.4...40pF Type of diode: varicap Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Max. off-state voltage: 30V Case: SOD323 |
auf Bestellung 2938 Stücke: Lieferzeit 14-21 Tag (e) |
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BB535E7904HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF Leakage current: 0.2µA Load current: 20mA Capacitance: 2...20pF Type of diode: varicap Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Max. off-state voltage: 30V Case: SOD323 |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS670S2LH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Case: SOT23 Mounting: SMD Power dissipation: 0.36W Drain current: 0.54A On-state resistance: 0.65Ω Gate-source voltage: ±20V Drain-source voltage: 55V Polarisation: unipolar |
auf Bestellung 2838 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar On-state resistance: 82mΩ Power dissipation: 0.5W Drain current: 2.3A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of channel: enhancement Case: SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 |
auf Bestellung 7301 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar On-state resistance: 82mΩ Power dissipation: 0.5W Drain current: 2.3A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of channel: enhancement Case: SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 |
auf Bestellung 5899 Stücke: Lieferzeit 14-21 Tag (e) |
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TT142N14KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 142A Case: BG-PB34-1 Max. forward voltage: 1.56V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPP040N06NXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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ISC015N04NM5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N03S4L02ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC090N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPP030N10N5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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BC850BWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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XC8866FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XC8868FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Case: PG-TQFP-48 Mounting: SMD Interface: SPI; UART x2 Integrated circuit features: watchdog Operating temperature: -40...85°C Number of output compare channels: 1 Number of input capture channels: 1 Supply voltage: 3...5V DC Number of 16bit timers: 4 Number of PWM channels: 4 Number of 10bit A/D converters: 8 Memory: 1.75kB SRAM; 32kB FLASH Clock frequency: 24MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XC886C6FFI3V3ACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: CAN x2; SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XC886C6FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: CAN x2; SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XC886C8FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: CAN x2; SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XC886LM6FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XC886LM8FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
ISA170170N04LMDSXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ISA170230C04LMDSXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: ISA170230C04LMDSXTMA1 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP014N06NF2SAKMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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CY62158EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62158EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CY62158EV30LL-45BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IPB055N08NF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP055N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3 Type of transistor: N-MOSFET Drain-source voltage: 80V Drain current: 99A Power dissipation: 107W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 36nC Kind of channel: enhancement Technology: MOSFET |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR22PNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363 Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC88; SOT363 Current gain: 50 Mounting: SMD Frequency: 130MHz Semiconductor structure: double Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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CYBLE-212006-01 | INFINEON TECHNOLOGIES |
![]() Description: Module: Bluetooth Low Energy; 7.5dBm; Bluetooth; SMD; 1Mbps Type of communications module: Bluetooth Low Energy Transmitter output power: 7.5dBm Communictions protocol: Bluetooth Mounting: SMD Data transfer rate: 1Mbps Communications modules features: antenna Operating temperature: -40...85°C Receiver sensitivity: -93dBm |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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PVI5013RSPBF | INFINEON TECHNOLOGIES |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Mounting: SMD Turn-on time: 5ms Turn-off time: 25µs Number of channels: 2 Case: Gull wing 8 Insulation voltage: 3.75kV Type of optocoupler: optocoupler Kind of output: photodiode Manufacturer series: PVI5013RPbF |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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PVI5013RS-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 5ms Turn-off time: 0.25ms Manufacturer series: PVI5013RPbF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
GS-EVB-HB-0650603B-HD | INFINEON TECHNOLOGIES |
Category: Integrated circuits - Unclassified Description: GS-EVB-HB-0650603B-HD |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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TC299TX128F300SBCKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: TC299TX128F300SBCKXUMA1 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R400CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.3A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R400CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.3A Power dissipation: 112W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IPD65R400CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 9.5A Power dissipation: 118W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPS65R400CEAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.5A Power dissipation: 118W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 39nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IPA65R400CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 15.1A Power dissipation: 31W Case: TO220FP Gate-source voltage: 20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 39nC Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF200B211 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 23nC On-state resistance: 0.17Ω Drain current: 9A Gate-source voltage: ±20V Pulsed drain current: 34A Drain-source voltage: 200V Power dissipation: 80W Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRF60B217 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; N; 60V; 60A; 83W; TO220AB Case: TO220AB Mounting: THT Polarisation: N Type of transistor: N-MOSFET Gate charge: 44nC On-state resistance: 7.3mΩ Drain current: 60A Gate-source voltage: 20V Drain-source voltage: 60V Power dissipation: 83W Kind of channel: enhancement Technology: MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SGP15N120XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT Type of transistor: IGBT |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CE6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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CY7C1470BV25-250AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470BV33-167AXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470BV33-167BZI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V25-200AXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V25-200BZI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V25-200BZXC |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V33-167AXC |
![]() ![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V33-167AXI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1470V33-167BZI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCX5310H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.17 EUR |
BCX5316H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.17 EUR |
FM25VN10-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD50P04P4L11ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP120P04P4L03AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP120P04P4L03AKSA2
Category: Transistors - Unclassified
Description: IPP120P04P4L03AKSA2
auf Bestellung 10633 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 3.16 EUR |
200+ | 2.85 EUR |
CY8C5467LTI-LP003 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR
Type of integrated circuit: ARM microcontroller
Case: QFN68; QFN
Mounting: SMD
Number of inputs/outputs: 38
Kind of architecture: Cortex M3
Operating temperature: -40...85°C
Number of 16bit timers: 4
Clock frequency: 67MHz
Integrated circuit features: DMA; PoR
Number of PWM channels: 1
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR
Type of integrated circuit: ARM microcontroller
Case: QFN68; QFN
Mounting: SMD
Number of inputs/outputs: 38
Kind of architecture: Cortex M3
Operating temperature: -40...85°C
Number of 16bit timers: 4
Clock frequency: 67MHz
Integrated circuit features: DMA; PoR
Number of PWM channels: 1
Number of output compare channels: 2
Number of input capture channels: 2
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
260+ | 14.6 EUR |
BFS481H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISA220280C03LMDSXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.27 EUR |
BB639E7904HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2.4...40pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2.4...40pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
auf Bestellung 2938 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
376+ | 0.19 EUR |
497+ | 0.14 EUR |
937+ | 0.076 EUR |
991+ | 0.072 EUR |
BB535E7904HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.8 EUR |
BSS670S2LH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT23
Mounting: SMD
Power dissipation: 0.36W
Drain current: 0.54A
On-state resistance: 0.65Ω
Gate-source voltage: ±20V
Drain-source voltage: 55V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT23
Mounting: SMD
Power dissipation: 0.36W
Drain current: 0.54A
On-state resistance: 0.65Ω
Gate-source voltage: ±20V
Drain-source voltage: 55V
Polarisation: unipolar
auf Bestellung 2838 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
400+ | 0.18 EUR |
578+ | 0.12 EUR |
673+ | 0.11 EUR |
1053+ | 0.068 EUR |
1114+ | 0.064 EUR |
BSS806NEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 7301 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
236+ | 0.3 EUR |
278+ | 0.26 EUR |
408+ | 0.18 EUR |
479+ | 0.15 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
BSS806NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
414+ | 0.17 EUR |
675+ | 0.11 EUR |
1174+ | 0.061 EUR |
1241+ | 0.058 EUR |
TT142N14KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP040N06NXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.13 EUR |
ISC015N04NM5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.76 EUR |
IPD90N03S4L02ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC090N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP030N10N5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 4.08 EUR |
150+ | 3.66 EUR |
BC850BWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.049 EUR |
XC8866FFI5VACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC8868FFI5VACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Case: PG-TQFP-48
Mounting: SMD
Interface: SPI; UART x2
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of output compare channels: 1
Number of input capture channels: 1
Supply voltage: 3...5V DC
Number of 16bit timers: 4
Number of PWM channels: 4
Number of 10bit A/D converters: 8
Memory: 1.75kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Case: PG-TQFP-48
Mounting: SMD
Interface: SPI; UART x2
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of output compare channels: 1
Number of input capture channels: 1
Supply voltage: 3...5V DC
Number of 16bit timers: 4
Number of PWM channels: 4
Number of 10bit A/D converters: 8
Memory: 1.75kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC886C6FFI3V3ACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC886C6FFI5VACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC886C8FFI5VACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC886LM6FFI5VACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XC886LM8FFI5VACFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISA170170N04LMDSXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.31 EUR |
ISA170230C04LMDSXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.58 EUR |
IPP014N06NF2SAKMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 2.56 EUR |
200+ | 2.32 EUR |
CY62158EV30LL-45BVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62158EV30LL-45ZSXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62158EV30LL-45BVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB055N08NF2SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 1 EUR |
IPP055N08NF2SAKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.24 EUR |
BCR22PNH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 50
Mounting: SMD
Frequency: 130MHz
Semiconductor structure: double
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 50
Mounting: SMD
Frequency: 130MHz
Semiconductor structure: double
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.087 EUR |
CYBLE-212006-01 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 7.5dBm; Bluetooth; SMD; 1Mbps
Type of communications module: Bluetooth Low Energy
Transmitter output power: 7.5dBm
Communictions protocol: Bluetooth
Mounting: SMD
Data transfer rate: 1Mbps
Communications modules features: antenna
Operating temperature: -40...85°C
Receiver sensitivity: -93dBm
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 7.5dBm; Bluetooth; SMD; 1Mbps
Type of communications module: Bluetooth Low Energy
Transmitter output power: 7.5dBm
Communictions protocol: Bluetooth
Mounting: SMD
Data transfer rate: 1Mbps
Communications modules features: antenna
Operating temperature: -40...85°C
Receiver sensitivity: -93dBm
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 8.59 EUR |
PVI5013RSPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Case: Gull wing 8
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Case: Gull wing 8
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
PVI5013RS-TPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
Im Einkaufswagen
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GS-EVB-HB-0650603B-HD |
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 303.55 EUR |
2+ | 273.2 EUR |
TC299TX128F300SBCKXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TC299TX128F300SBCKXUMA1
Category: Integrated circuits - Unclassified
Description: TC299TX128F300SBCKXUMA1
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 81.92 EUR |
IPA60R400CEXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
46+ | 1.57 EUR |
49+ | 1.47 EUR |
IPD60R400CEAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPD65R400CEAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
Power dissipation: 118W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
Power dissipation: 118W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPS65R400CEAKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA65R400CEXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.97 EUR |
IRF200B211 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 23nC
On-state resistance: 0.17Ω
Drain current: 9A
Gate-source voltage: ±20V
Pulsed drain current: 34A
Drain-source voltage: 200V
Power dissipation: 80W
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 23nC
On-state resistance: 0.17Ω
Drain current: 9A
Gate-source voltage: ±20V
Pulsed drain current: 34A
Drain-source voltage: 200V
Power dissipation: 80W
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRF60B217 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 60A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: N
Type of transistor: N-MOSFET
Gate charge: 44nC
On-state resistance: 7.3mΩ
Drain current: 60A
Gate-source voltage: 20V
Drain-source voltage: 60V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 60A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: N
Type of transistor: N-MOSFET
Gate charge: 44nC
On-state resistance: 7.3mΩ
Drain current: 60A
Gate-source voltage: 20V
Drain-source voltage: 60V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.93 EUR |
SGP15N120XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 4.82 EUR |
150+ | 4.33 EUR |
BC857CE6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.044 EUR |
BC857CWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.051 EUR |