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BAS4004E6433HTMA1 INFINEON TECHNOLOGIES INFNS19700-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 200000 Stücke:
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10000+0.062 EUR
Mindestbestellmenge: 10000
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TLE42754DATMA1 TLE42754DATMA1 INFINEON TECHNOLOGIES Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
auf Bestellung 2464 Stücke:
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38+1.89 EUR
53+1.37 EUR
54+1.33 EUR
57+1.26 EUR
59+1.22 EUR
Mindestbestellmenge: 38
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CY7C199D-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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IAUC90N10S5N062ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC90N10S5N062-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6291c10dd2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB330P10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
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1000+2.79 EUR
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IPP041N04NGXKSA1 IPP041N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96C690B2E211C&compId=IPP041N04NG-DTE.pdf?ci_sign=a7d418e7844ec4329454d1b9295f50f67a9a029a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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40+1.8 EUR
70+1.03 EUR
79+0.92 EUR
111+0.65 EUR
117+0.61 EUR
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IRFB7546PBF IRFB7546PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB173E751F5EA&compId=IRFB7546PBF.pdf?ci_sign=63e6fed0b5b3c3fdc502b4567725b6b30e939ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1293 Stücke:
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47+1.53 EUR
70+1.03 EUR
82+0.87 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 47
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BAR6702VH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749 Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 33000 Stücke:
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3000+0.13 EUR
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IPB026N06NATMA1 IPB026N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D919F0C5211C&compId=IPB026N06N-DTE.pdf?ci_sign=9e67f2cfc0142beb0bd4b1ee285c5ae4db6e555a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC066N06NSATMA1 BSC066N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3870DFCDF18411C&compId=BSC066N06NS-DTE.pdf?ci_sign=441f0f372dac3b7efa4853e9f29fde4aaa80c83d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38725BC2E96811C&compId=BSC076N06NS3G-DTE.pdf?ci_sign=360dd0f290089c5f67d6f09e520aad476ca8d393 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPF016N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
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800+1.62 EUR
Mindestbestellmenge: 800
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IPD26N06S2L35ATMA2 IPD26N06S2L35ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA42B2206632143&compId=IPD26N06S2L35.pdf?ci_sign=136ef879288429b5d3d02173ab4367d056d8d3d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB016N06L3GATMA1 IPB016N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5CEC4B1B9C11C&compId=IPB016N06L3G-DTE.pdf?ci_sign=771cd50308087000a64d845feff9bfa9f27c355d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D584FDDFF1CC&compId=SPD18P06PGBTMA1-DTE.PDF?ci_sign=da6a29aaaa090540fd1b2071f208587cdcd3da3a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2428 Stücke:
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52+1.4 EUR
56+1.29 EUR
73+0.99 EUR
77+0.93 EUR
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SPD08P06PGBTMA1 SPD08P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C66FF52E31CC&compId=SPD08P06PGBTMA1-DTE.pdf?ci_sign=7b711489853b2c9a41ef3b64f3dc1316c5bde3a3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPB18P06PGATMA1 SPB18P06PGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92BC797642F1CC&compId=SPB18P06PGATMA1-dte.pdf?ci_sign=93db9e7468102cc11ceb895a3979f36dd489956b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1470BV25-167BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-200BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-200BZXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-250AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1470BV25-250AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470BV33-167BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470V25-200BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470V25-200BZXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1470V33-167AXC INFINEON TECHNOLOGIES ?docID=46217 Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470V33-167AXI INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1470V33-167BZI INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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BCX5310H6327XTSA1 INFINEON TECHNOLOGIES bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.17 EUR
Mindestbestellmenge: 1000
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BCX5316H6327XTSA1 INFINEON TECHNOLOGIES bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 1000 Stücke:
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1000+0.17 EUR
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FM25VN10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: SPI
Produkt ist nicht verfügbar
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IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
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IPP120P04P4L03AKSA2 INFINEON TECHNOLOGIES Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Category: Transistors - Unclassified
Description: IPP120P04P4L03AKSA2
auf Bestellung 10633 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.16 EUR
200+2.85 EUR
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CY8C5467LTI-LP003 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR
Type of integrated circuit: ARM microcontroller
Case: QFN68; QFN
Mounting: SMD
Number of inputs/outputs: 38
Kind of architecture: Cortex M3
Operating temperature: -40...85°C
Number of 16bit timers: 4
Clock frequency: 67MHz
Integrated circuit features: DMA; PoR
Number of PWM channels: 1
Number of output compare channels: 2
Number of input capture channels: 2
auf Bestellung 875 Stücke:
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BFS481H6327XTSA1 BFS481H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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ISA220280C03LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369 Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.27 EUR
Mindestbestellmenge: 4000
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BB639E7904HTSA1 BB639E7904HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79ADA519FC402A749&compId=BB639_659.pdf?ci_sign=dacf10db0e924434f744aab9cea5835f8741907f Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2.4...40pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
auf Bestellung 3038 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
376+0.19 EUR
497+0.14 EUR
935+0.077 EUR
937+0.076 EUR
991+0.072 EUR
Mindestbestellmenge: 264
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BB535E7904HTSA1 BB535E7904HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B05181EEDE27&compId=BB535-DTE.pdf?ci_sign=a4fb6cf5ef18ed8b38aab6c8baa5d1a7cb263a48 Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
auf Bestellung 390 Stücke:
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218+0.33 EUR
295+0.24 EUR
382+0.19 EUR
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A82953A1E7110B&compId=BSS670S2LH6327XTSA.pdf?ci_sign=2c6f1d2f4b0a50a6adc3480e956cf1183118c3f9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2838 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
400+0.18 EUR
578+0.12 EUR
673+0.11 EUR
1053+0.068 EUR
1114+0.064 EUR
Mindestbestellmenge: 278
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 7301 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
236+0.3 EUR
278+0.26 EUR
408+0.18 EUR
479+0.15 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
414+0.17 EUR
675+0.11 EUR
1174+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 239
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TT142N14KOF TT142N14KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE39CABA2EA469&compId=TT142N14KOF.pdf?ci_sign=7dea778ac886801f67df21df1d560643e41fafd3 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP040N06NXKSA1 INFINEON TECHNOLOGIES Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.13 EUR
Mindestbestellmenge: 100
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ISC015N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.75 EUR
Mindestbestellmenge: 5000
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IPD90N03S4L02ATMA1 IPD90N03S4L02ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA554F49B58E143&compId=IPD90N03S4L02.pdf?ci_sign=acd316fd8741a95f752806ce832d01a4fa19919a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BSC090N03LSGATMA1 BSC090N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875FD67236411C&compId=BSC090N03LSG-DTE.pdf?ci_sign=ea99c605e8422443863bc8a357a12a0d7e06b5ce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP030N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.08 EUR
150+3.66 EUR
Mindestbestellmenge: 50
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BC850BWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.049 EUR
Mindestbestellmenge: 3000
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XC8866FFI5VACFXUMA1 XC8866FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC8868FFI5VACFXUMA1 XC8868FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC886C6FFI3V3ACFXUMA1 XC886C6FFI3V3ACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC886C6FFI5VACFXUMA1 XC886C6FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC886C8FFI5VACFXUMA1 XC886C8FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC886LM6FFI5VACFXUMA1 XC886LM6FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886LM8FFI5VACFXUMA1 XC886LM8FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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ISA170170N04LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.31 EUR
Mindestbestellmenge: 4000
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ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.58 EUR
Mindestbestellmenge: 4000
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BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 200000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.062 EUR
Mindestbestellmenge: 10000
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TLE42754DATMA1 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754DATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
53+1.37 EUR
54+1.33 EUR
57+1.26 EUR
59+1.22 EUR
Mindestbestellmenge: 38
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC90N10S5N062ATMA1 Infineon-IAUC90N10S5N062-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6291c10dd2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 66A; Idm: 360A; 115W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 66A
Pulsed drain current: 360A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.79 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E96C690B2E211C&compId=IPP041N04NG-DTE.pdf?ci_sign=a7d418e7844ec4329454d1b9295f50f67a9a029a
IPP041N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.8 EUR
70+1.03 EUR
79+0.92 EUR
111+0.65 EUR
117+0.61 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7546PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB173E751F5EA&compId=IRFB7546PBF.pdf?ci_sign=63e6fed0b5b3c3fdc502b4567725b6b30e939ea6
IRFB7546PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
70+1.03 EUR
82+0.87 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BAR6702VH6327XTSA1 Infineon-BAR67-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcc0e8f30749
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB026N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D919F0C5211C&compId=IPB026N06N-DTE.pdf?ci_sign=9e67f2cfc0142beb0bd4b1ee285c5ae4db6e555a
IPB026N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC066N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3870DFCDF18411C&compId=BSC066N06NS-DTE.pdf?ci_sign=441f0f372dac3b7efa4853e9f29fde4aaa80c83d
BSC066N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC076N06NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38725BC2E96811C&compId=BSC076N06NS3G-DTE.pdf?ci_sign=360dd0f290089c5f67d6f09e520aad476ca8d393
BSC076N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF016N06NF2SATMA1 Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.62 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPD26N06S2L35ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA42B2206632143&compId=IPD26N06S2L35.pdf?ci_sign=136ef879288429b5d3d02173ab4367d056d8d3d7
IPD26N06S2L35ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB016N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5CEC4B1B9C11C&compId=IPB016N06L3G-DTE.pdf?ci_sign=771cd50308087000a64d845feff9bfa9f27c355d
IPB016N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD18P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D584FDDFF1CC&compId=SPD18P06PGBTMA1-DTE.PDF?ci_sign=da6a29aaaa090540fd1b2071f208587cdcd3da3a
SPD18P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
56+1.29 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
SPD08P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C66FF52E31CC&compId=SPD08P06PGBTMA1-DTE.pdf?ci_sign=7b711489853b2c9a41ef3b64f3dc1316c5bde3a3
SPD08P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB18P06PGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92BC797642F1CC&compId=SPB18P06PGATMA1-dte.pdf?ci_sign=93db9e7468102cc11ceb895a3979f36dd489956b
SPB18P06PGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-167BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-200BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV33-200BZXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-250AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV25-250AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV33-167AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470BV33-167BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V25-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V25-200BZI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V25-200BZXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V33-167AXC ?docID=46217 Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V33-167AXI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1470V33-167BZI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX5310H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BCX5316H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: SPI
Produkt ist nicht verfügbar
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IPD50P04P4L11ATMA2 Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58
IPD50P04P4L11ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP120P04P4L03AKSA2 Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP120P04P4L03AKSA2
auf Bestellung 10633 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.16 EUR
200+2.85 EUR
Mindestbestellmenge: 50
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CY8C5467LTI-LP003 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR
Type of integrated circuit: ARM microcontroller
Case: QFN68; QFN
Mounting: SMD
Number of inputs/outputs: 38
Kind of architecture: Cortex M3
Operating temperature: -40...85°C
Number of 16bit timers: 4
Clock frequency: 67MHz
Integrated circuit features: DMA; PoR
Number of PWM channels: 1
Number of output compare channels: 2
Number of input capture channels: 2
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+14.57 EUR
Mindestbestellmenge: 260
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BFS481H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937
BFS481H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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ISA220280C03LMDSXTMA1 Infineon-ISA220280C03LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d35b32f46369
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.27 EUR
Mindestbestellmenge: 4000
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BB639E7904HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79ADA519FC402A749&compId=BB639_659.pdf?ci_sign=dacf10db0e924434f744aab9cea5835f8741907f
BB639E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2.4...40pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
auf Bestellung 3038 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
376+0.19 EUR
497+0.14 EUR
935+0.077 EUR
937+0.076 EUR
991+0.072 EUR
Mindestbestellmenge: 264
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BB535E7904HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B05181EEDE27&compId=BB535-DTE.pdf?ci_sign=a4fb6cf5ef18ed8b38aab6c8baa5d1a7cb263a48
BB535E7904HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
295+0.24 EUR
382+0.19 EUR
Mindestbestellmenge: 218
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BSS670S2LH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A82953A1E7110B&compId=BSS670S2LH6327XTSA.pdf?ci_sign=2c6f1d2f4b0a50a6adc3480e956cf1183118c3f9
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2838 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
400+0.18 EUR
578+0.12 EUR
673+0.11 EUR
1053+0.068 EUR
1114+0.064 EUR
Mindestbestellmenge: 278
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BSS806NEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A835FDBDAD310B&compId=BSS806NEH6327XTSA1.pdf?ci_sign=6c6768b26d5644a3eb003bb38a7a7b5d3fc7db0a
BSS806NEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 7301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
236+0.3 EUR
278+0.26 EUR
408+0.18 EUR
479+0.15 EUR
910+0.079 EUR
962+0.074 EUR
Mindestbestellmenge: 179
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BSS806NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A83CD3DEEF310B&compId=BSS806NH6327XTSA1.pdf?ci_sign=0a43cefa63a012994060e8c30caf4f990ca0f5cc
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Polarisation: unipolar
On-state resistance: 82mΩ
Power dissipation: 0.5W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
414+0.17 EUR
675+0.11 EUR
1174+0.061 EUR
1241+0.058 EUR
Mindestbestellmenge: 239
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TT142N14KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE39CABA2EA469&compId=TT142N14KOF.pdf?ci_sign=7dea778ac886801f67df21df1d560643e41fafd3
TT142N14KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP040N06NXKSA1 Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.13 EUR
Mindestbestellmenge: 100
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ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.75 EUR
Mindestbestellmenge: 5000
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IPD90N03S4L02ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA554F49B58E143&compId=IPD90N03S4L02.pdf?ci_sign=acd316fd8741a95f752806ce832d01a4fa19919a
IPD90N03S4L02ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BSC090N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875FD67236411C&compId=BSC090N03LSG-DTE.pdf?ci_sign=ea99c605e8422443863bc8a357a12a0d7e06b5ce
BSC090N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.08 EUR
150+3.66 EUR
Mindestbestellmenge: 50
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BC850BWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.049 EUR
Mindestbestellmenge: 3000
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XC8866FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC8866FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC8868FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC8868FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
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XC886C6FFI3V3ACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC886C6FFI3V3ACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886C6FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC886C6FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886C8FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC886C8FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886LM6FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC886LM6FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XC886LM8FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC886LM8FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.31 EUR
Mindestbestellmenge: 4000
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.58 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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