Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151638) > Seite 2521 nach 2528
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPD50N06S214ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
IDW40G65C5BXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W Case: PG-TO247-3 Load current: 20A x2 Max. forward voltage: 1.8V Max. off-state voltage: 650V Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Leakage current: 4.1µA Technology: CoolSiC™ 5G; SiC Max. forward impulse current: 87A Semiconductor structure: common cathode; double Power dissipation: 112W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IPP030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IPI030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IAUZ30N10S5L240ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 120A Power dissipation: 45.5W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
BCW60BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 1311 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IPA028N04NM3SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP Drain-source voltage: 40V Drain current: 63A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 356A Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IPA028N08N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 62A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
CY62162G18-55BGXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Access time: 55ns Case: PBGA119 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.65...2.2V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
BSB280N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
BCW68FE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
BCW68GE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
CY8C4745AZI-S413 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
ITS41K0SMENHUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
ITS4140N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4 Output current: 0.2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Industrial PROFET Kind of integrated circuit: high-side Mounting: SMD Case: SOT223-4 Supply voltage: 4.9...60V DC |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IRS23364DJPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -0.35...0.2A Supply voltage: 11.5...20V DC Mounting: SMD Operating temperature: -40...125°C Number of channels: 6 Kind of package: tube Voltage class: 600V Power: 2W Turn-on time: 655ns Turn-off time: 580ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IRS2336DMTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: MLPQ34 Output current: -0.35...0.2A Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Number of channels: 6 Kind of package: reel; tape Voltage class: 600V Power: 2W Turn-on time: 655ns Turn-off time: 580ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRS2336DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
IRF9952TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8 Mounting: SMD Drain-source voltage: 30/-30V Drain current: 3.5/-2.3A On-state resistance: 0.1/0.25Ω Type of transistor: N/P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhancement Gate-source voltage: ±30V Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
S80KS5122GABHA020 | INFINEON TECHNOLOGIES |
![]() Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Mechanical mounting: screw Technology: EconoPACK™ 4 Case: AG-ECONO4-1 Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IPD082N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IPB60R160C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SPD07N60C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
IPP086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
SMBTA06E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IPB90R340C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Case: PG-TO263-3 Drain-source voltage: 900V Drain current: 9.5A On-state resistance: 0.34Ω Mounting: SMD Power dissipation: 208W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IPB90R340C3ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1005 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
DEMO SENSE2GOL | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included Type of development kit: demonstration Kit contents: documentation; prototype board; USB A - USB B micro cable Components: BGT24LTR11 Software: included |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BSC014N06NSTATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 60V; 100A; 156W; PG-TDSON-8 FL; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 FL Gate-source voltage: 20V On-state resistance: 1.45mΩ Mounting: SMD Kind of channel: enhancement Technology: MOSFET Electrical mounting: SMT |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
IRL40T209ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 586A Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IRL40S212ARMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 254A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
DD340N20SHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA Case: BG-PB50SB-1 Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 10kA Type of semiconductor module: diode Semiconductor structure: double series Load current: 330A Max. forward voltage: 1.31V Max. off-state voltage: 2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IDV15E65D2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Case: TO220FP-2 |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IDW15E65D2FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Case: TO247-3 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IRFR2407TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 42A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
BAT6804E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 8V Load current: 0.13A Semiconductor structure: double series Power dissipation: 0.15W |
auf Bestellung 5175 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
BCR401U | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SC74 Mounting: SMD Topology: single transistor Output current: 60mA Operating voltage: 1.4...40V DC Number of channels: 1 |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
BCR08PNH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Case: SOT363 Frequency: 170MHz Polarisation: bipolar Kind of transistor: BRT; complementary pair |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
BCR08PNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP Type of transistor: NPN / PNP |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
IPD85P04P407ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Case: SOT23 Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
TLE75602ESDXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.33A Number of channels: 14 Kind of output: N-Channel Mounting: SMD Case: TSSOP24 On-state resistance: 1Ω Operating temperature: -40...150°C Application: automotive industry |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
IPG20N06S415ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
IPD220N06L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
TLD23313EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 60mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 60mA Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
TLD2314ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Technology: Litix™ Case: PG-SSOP-14-EP Output current: 0.12A Number of channels: 3 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 5.5...40V DC Protection: overheating OTP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
TLD2311ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
![]() |
ITS716G | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20 Kind of integrated circuit: high-side Technology: Industrial PROFET Case: SO20 Mounting: SMD Kind of output: N-Channel On-state resistance: 0.11Ω Output current: 2.3A Number of channels: 4 Supply voltage: 5.5...40V DC Type of integrated circuit: power switch |
auf Bestellung 999 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IRSM836-024MATR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A Type of integrated circuit: driver Topology: MOSFET three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Case: PQFN12X12 Output current: 2A Mounting: SMD Operating temperature: -40...150°C Power dissipation: 16W Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality Protection: anti-overload OPP; undervoltage UVP Technology: iMOTION™ Operating voltage: 11.5...18.5/8.9...200V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.11A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IPB039N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7 Polarisation: unipolar Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TO263-7 On-state resistance: 3.9mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 160A Power dissipation: 214W Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 On-state resistance: 8Ω Mounting: SMD Kind of channel: depletion Technology: SIPMOS™ Gate-source voltage: ±20V |
auf Bestellung 1422 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IMW65R072M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247 Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 69A Power dissipation: 96W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 94mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
CY14V101QS-BK108XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray Supply voltage: 1.71...2V DC; 2.7...3.6V DC Frequency: 108MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
CY14V101QS-BK108XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: reel; tape Supply voltage: 1.71...2V DC; 2.7...3.6V DC Frequency: 108MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FS100R12W2T7B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 100A Pulsed collector current: 200A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-EASY2B-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
![]() |
IRFS52N15DTRLP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
![]() |
IRFS52N15DTRRP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IPD50N06S214ATMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.97 EUR |
IDW40G65C5BXKSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 20A x2
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 4.1µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 87A
Semiconductor structure: common cathode; double
Power dissipation: 112W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 20A x2
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 4.1µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 87A
Semiconductor structure: common cathode; double
Power dissipation: 112W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP030N10N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.62 EUR |
18+ | 4.16 EUR |
19+ | 3.95 EUR |
IPI030N10N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUZ30N10S5L240ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW60BE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1311+ | 0.054 EUR |
IPA028N04NM3SXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA028N08N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 62A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 62A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62162G18-55BGXI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSB280N15NZ3GXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW68FE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
385+ | 0.19 EUR |
581+ | 0.12 EUR |
1025+ | 0.07 EUR |
1083+ | 0.066 EUR |
BCW68GE6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.062 EUR |
CY8C4745AZI-S413 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 6.41 EUR |
ITS41K0SMENHUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.79 EUR |
ITS4140N |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
45+ | 1.62 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
IRS23364DJPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Supply voltage: 11.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 600V
Power: 2W
Turn-on time: 655ns
Turn-off time: 580ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Supply voltage: 11.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 600V
Power: 2W
Turn-on time: 655ns
Turn-off time: 580ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS2336DMTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Power: 2W
Turn-on time: 655ns
Turn-off time: 580ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: reel; tape
Voltage class: 600V
Power: 2W
Turn-on time: 655ns
Turn-off time: 580ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS2336DSTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.97 EUR |
IRF9952TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S80KS5122GABHA020 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS150R17PE4BOSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD082N10N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R160C6ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPD07N60C3ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.86 EUR |
IPP086N10N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBTA06E6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB90R340C3ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 900V
Drain current: 9.5A
On-state resistance: 0.34Ω
Mounting: SMD
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 900V
Drain current: 9.5A
On-state resistance: 0.34Ω
Mounting: SMD
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB90R340C3ATMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.43 EUR |
DEMO SENSE2GOL |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC014N06NSTATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 156W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 156W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 2.75 EUR |
IRL40T209ATMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 586A
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 586A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL40S212ARMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DD340N20SHPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Load current: 330A
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Load current: 330A
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDV15E65D2XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.34 EUR |
IDW15E65D2FKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IRFR2407TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT6804E6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
auf Bestellung 5175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
196+ | 0.37 EUR |
224+ | 0.32 EUR |
232+ | 0.31 EUR |
290+ | 0.25 EUR |
305+ | 0.23 EUR |
BCR401U |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Output current: 60mA
Operating voltage: 1.4...40V DC
Number of channels: 1
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Output current: 60mA
Operating voltage: 1.4...40V DC
Number of channels: 1
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BCR08PNH6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
340+ | 0.21 EUR |
380+ | 0.19 EUR |
430+ | 0.17 EUR |
495+ | 0.15 EUR |
520+ | 0.14 EUR |
BCR08PNH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.084 EUR |
IPD85P04P407ATMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.93 EUR |
SN7002NH6327XTSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE75602ESDXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.86 EUR |
IPG20N06S415ATMA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.84 EUR |
IPD220N06L3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.34 EUR |
TLD23313EPXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 60mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 60mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 60mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 60mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLD2314ELXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLD2311ELXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.73 EUR |
ITS716G |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Case: SO20
Mounting: SMD
Kind of output: N-Channel
On-state resistance: 0.11Ω
Output current: 2.3A
Number of channels: 4
Supply voltage: 5.5...40V DC
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Case: SO20
Mounting: SMD
Kind of output: N-Channel
On-state resistance: 0.11Ω
Output current: 2.3A
Number of channels: 4
Supply voltage: 5.5...40V DC
Type of integrated circuit: power switch
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
22+ | 3.36 EUR |
23+ | 3.17 EUR |
IRSM836-024MATR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB042N10N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR92PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
133+ | 0.54 EUR |
182+ | 0.39 EUR |
338+ | 0.21 EUR |
358+ | 0.2 EUR |
IPB039N10N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS159NH6327XTSA2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
auf Bestellung 1422 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
183+ | 0.39 EUR |
236+ | 0.3 EUR |
291+ | 0.25 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
IMW65R072M1HXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 17.27 EUR |
6+ | 12.87 EUR |
CY14V101QS-BK108XI |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14V101QS-BK108XIT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: reel; tape
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: reel; tape
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS100R12W2T7B11BOMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS52N15DTRLP |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS52N15DTRRP |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH