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IRF8714TRPBF IRF8714TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE10A1A317F1A303005056AB0C4F&compId=irf8714pbf.pdf?ci_sign=da5625da86eff355c7f4b92c8bd3a6e9cc9dad9d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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ISP772T ISP772T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A93C9BF20469&compId=ISP772T.pdf?ci_sign=d3b3add32bc4e12831220585983803a7e969c4f7 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1250 Stücke:
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35+2.1 EUR
38+1.9 EUR
50+1.46 EUR
53+1.37 EUR
1000+1.36 EUR
Mindestbestellmenge: 35
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ISP742RI ISP742RI INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD66FD3A01975EA&compId=ISP742RI.pdf?ci_sign=ba68272d53a12c7b7132945ea35aa7c760bc9660 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1402 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
46+1.57 EUR
50+1.44 EUR
52+1.39 EUR
53+1.37 EUR
100+1.32 EUR
Mindestbestellmenge: 30
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ISC130N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Mounting: SMD
Case: PG-TSON-8
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 242W
Polarisation: unipolar
Kind of package: reel
Gate charge: 39nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 352A
Produkt ist nicht verfügbar
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S29GL01GT10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI023 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI040 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL512T10TFI043 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPD90N08S405ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.34 EUR
Mindestbestellmenge: 2500
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IRFR1010ZTRLPBF IRFR1010ZTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BF78D5E45DF1A303005056AB0C4F&compId=irfr1010zpbf.pdf?ci_sign=5d971f53ac9962762cfd1d09693ca9c20e59aadf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 91A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IRFR1010ZTRPBF IRFR1010ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BF78D5E45DF1A303005056AB0C4F&compId=irfr1010zpbf.pdf?ci_sign=5d971f53ac9962762cfd1d09693ca9c20e59aadf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 91A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IRFR1018ETRPBF IRFR1018ETRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BFFF64F90CF1A303005056AB0C4F&compId=irfr1018epbf.pdf?ci_sign=ce18117bd2e5d82f13a0f6d350000efbb3bd0570 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; DPAK
Case: DPAK
Drain-source voltage: 60V
Drain current: 79A
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IRFP4868PBF IRFP4868PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE900C419F5EA&compId=IRFP4868PBF.pdf?ci_sign=ffb090ca678853ce73ce3547e98b6c3affefd6bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.34 EUR
Mindestbestellmenge: 10
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IRFP4868PBFAKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4768PBFXKMA1 IRFP4768PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.49 EUR
23+3.19 EUR
24+3.02 EUR
100+3 EUR
250+2.9 EUR
Mindestbestellmenge: 14
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IRF7749L1TRPBF IRF7749L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7240TRPBF IRF7240TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7441150C01F1A303005056AB0C4F&compId=irf7240pbf.pdf?ci_sign=a0adc4ef5f3f3b20f965900b0b514c00a7c5c9de Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TC297TX128F300NBCKXUMA1 INFINEON TECHNOLOGIES Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+78.28 EUR
Mindestbestellmenge: 1000
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CY7C1019DV33-10BVXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1019DV33-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1020D-10ZSXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1020D-10ZSXIT INFINEON TECHNOLOGIES ?docID=49324 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1020DV33-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1020DV33_512_K_(32_K_x_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2f5bf37f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1021D-10VXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1021D-10ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1021DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
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CY7C1021DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1021DV33-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1041G-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
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CY7C1041G-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1041G-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1041G18-15BVXI INFINEON TECHNOLOGIES download Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1041G18-15BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1041G30-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
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CY7C1041G30-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1041G30-10ZSXA INFINEON TECHNOLOGIES Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1041G30-10ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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IPA65R380C6XKSA1 IPA65R380C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2D42B08E5D1BF&compId=IPA65R380C6-DTE.pdf?ci_sign=47e2817ed3d474dc4a948fe7cff81ace936c2fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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IPB65R380C6ATMA1 IPB65R380C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF32141A4C0F1BF&compId=IPB65R380C6-DTE.pdf?ci_sign=a7f0f0199dc44a7f3e195f767dd282f7da6f3870 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R380C6XKSA1 IPI65R380C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB90A4F17E251BF&compId=IPI65R380C6-DTE.pdf?ci_sign=f007af3a5f24dfc285ce3d7c33a1efe79db57adb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP50R380CEXKSA1 IPP50R380CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABE0A807B4FD51CC&compId=IPP50R380CE-DTE.pdf?ci_sign=dd0098b3e3b779d20ea0de44e83faea4209ef4ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 101 Stücke:
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45+1.62 EUR
77+0.94 EUR
100+0.72 EUR
Mindestbestellmenge: 45
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IPD50R380CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
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Mindestbestellmenge: 2500
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IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2B00CCB4CF00749&compId=IKQ50N120CH3.pdf?ci_sign=9948a7846a926ba14bfe5fba1a46f2adfd5af9d0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AF8E3A772C4749&compId=IKQ50N120CT2.pdf?ci_sign=d9110ec64f0b1c60eb595432e40ae4d175375e74 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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BTS3046SDLATMA1 INFINEON TECHNOLOGIES Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 60V
Produkt ist nicht verfügbar
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IRF7855TRPBF IRF7855TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ACE545C2EEF1A303005056AB0C4F&compId=irf7855pbf.pdf?ci_sign=b22b7175e73c8569212aaa050adf69f108f47aab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7478TRPBF IRF7478TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A57EAE5FF6F1A303005056AB0C4F&compId=irf7478pbf.pdf?ci_sign=69c24f3bee3cfebac042a9bf9dfebec91fe8a590 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC13DN30NSFDATMA1 INFINEON TECHNOLOGIES Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 300V; 16A; 150W; PG-TDSON-8; SMT
Mounting: SMD
Gate charge: 30nC
On-state resistance: 114mΩ
Drain current: 16A
Gate-source voltage: 20V
Power dissipation: 150W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.53 EUR
Mindestbestellmenge: 5000
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IPA057N06N3GXKSA1 IPA057N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99D203175811C&compId=IPA057N06N3G-DTE.pdf?ci_sign=8120eafd3b66acc9439c1bdc8098043f3d669323 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 79 Stücke:
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21+3.53 EUR
27+2.69 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 21
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IPA057N08N3GXKSA1 IPA057N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4C6A3809C11C&compId=IPA057N08N3G-DTE.pdf?ci_sign=58e0ece08359e4f003949840794f3e64ceaa0a08 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Case: TO220FP
Drain-source voltage: 80V
Drain current: 60A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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BTS142D BTS142D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697BAA6861D4469&compId=BTS142D.pdf?ci_sign=18ccc82bc95d63c9b532c3b881e9cfeaef927a86 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Mounting: SMD
Case: TO252-3
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 59W
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 23mΩ
Output voltage: 42V
Output current: 4.6A
Type of integrated circuit: power switch
auf Bestellung 849 Stücke:
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25+2.97 EUR
38+1.89 EUR
40+1.79 EUR
250+1.72 EUR
Mindestbestellmenge: 25
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S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.7...3.6V
Interface: QUAD SPI
Kind of memory: NOR Flash
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
44+1.63 EUR
Mindestbestellmenge: 41
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFDDC25858D3D7&compId=FB30R06W1E3.pdf?ci_sign=f0ac3378cf97532bc2bdcf462e9cd732b44ce192 Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IRF8714TRPBF pVersion=0046&contRep=ZT&docId=E221AE10A1A317F1A303005056AB0C4F&compId=irf8714pbf.pdf?ci_sign=da5625da86eff355c7f4b92c8bd3a6e9cc9dad9d
IRF8714TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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ISP772T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A93C9BF20469&compId=ISP772T.pdf?ci_sign=d3b3add32bc4e12831220585983803a7e969c4f7
ISP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
38+1.9 EUR
50+1.46 EUR
53+1.37 EUR
1000+1.36 EUR
Mindestbestellmenge: 35
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ISP742RI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD66FD3A01975EA&compId=ISP742RI.pdf?ci_sign=ba68272d53a12c7b7132945ea35aa7c760bc9660
ISP742RI
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
46+1.57 EUR
50+1.44 EUR
52+1.39 EUR
53+1.37 EUR
100+1.32 EUR
Mindestbestellmenge: 30
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ISC130N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF2650300C7C0DF&compId=ISC130N20NM6ATMA1.pdf?ci_sign=d4951248117a20627fae5e84001683ea5ab0346f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 88A; Idm: 352A
Mounting: SMD
Case: PG-TSON-8
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 242W
Polarisation: unipolar
Kind of package: reel
Gate charge: 39nC
Technology: OptiMOS™ 6
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 352A
Produkt ist nicht verfügbar
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S29GL01GT10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GT10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 1Gb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Application: automotive
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI023 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI040 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: in-tray
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI043 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Kind of memory: NOR Flash
Kind of package: reel; tape
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Memory: 512Mb FLASH
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPD90N08S405ATMA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.34 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1010ZTRLPBF pVersion=0046&contRep=ZT&docId=E221BF78D5E45DF1A303005056AB0C4F&compId=irfr1010zpbf.pdf?ci_sign=5d971f53ac9962762cfd1d09693ca9c20e59aadf
IRFR1010ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 91A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1010ZTRPBF pVersion=0046&contRep=ZT&docId=E221BF78D5E45DF1A303005056AB0C4F&compId=irfr1010zpbf.pdf?ci_sign=5d971f53ac9962762cfd1d09693ca9c20e59aadf
IRFR1010ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 91A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1018ETRPBF pVersion=0046&contRep=ZT&docId=E221BFFF64F90CF1A303005056AB0C4F&compId=irfr1018epbf.pdf?ci_sign=ce18117bd2e5d82f13a0f6d350000efbb3bd0570
IRFR1018ETRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; DPAK
Case: DPAK
Drain-source voltage: 60V
Drain current: 79A
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4868PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE900C419F5EA&compId=IRFP4868PBF.pdf?ci_sign=ffb090ca678853ce73ce3547e98b6c3affefd6bd
IRFP4868PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
Mindestbestellmenge: 10
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IRFP4868PBFAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4768PBFXKMA1 Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.49 EUR
23+3.19 EUR
24+3.02 EUR
100+3 EUR
250+2.9 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRF7749L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8D93D3E8D5EA&compId=IRF7749L1TRPBF.pdf?ci_sign=ac4cf3f56b24f673218007a1d83cc26fc9837f08
IRF7749L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7240TRPBF pVersion=0046&contRep=ZT&docId=E21F7441150C01F1A303005056AB0C4F&compId=irf7240pbf.pdf?ci_sign=a0adc4ef5f3f3b20f965900b0b514c00a7c5c9de
IRF7240TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TC297TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+78.28 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1019DV33-10BVXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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CY7C1019DV33-10VXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Case: SOJ32
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1020D-10ZSXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1020D-10ZSXIT ?docID=49324
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1020DV33-10ZSXI Infineon-CY7C1020DV33_512_K_(32_K_x_16)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2f5bf37f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021D-10VXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021D-10ZSXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10VXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10BVXI Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1021DV33-10VXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 1Mb SRAM
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G-10VXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G-10VXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G-10ZSXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G18-15BVXI download Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G18-15BVXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 15ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Case: VFBGA48
Mounting: SMD
Supply voltage: 1.65...2.2V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 15ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G30-10VXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G30-10VXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Case: SOJ44
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G30-10ZSXA Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1041G30-10ZSXE Infineon-CY7C1041G_AUTOMOTIVE_4-MBIT_(256K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed752145879&utm_source=cypress&utm_medium=referral&utm_campaign=202110
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Operating temperature: -40...125°C
Kind of interface: parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R380C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2D42B08E5D1BF&compId=IPA65R380C6-DTE.pdf?ci_sign=47e2817ed3d474dc4a948fe7cff81ace936c2fee
IPA65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R380C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF32141A4C0F1BF&compId=IPB65R380C6-DTE.pdf?ci_sign=a7f0f0199dc44a7f3e195f767dd282f7da6f3870
IPB65R380C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R380C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB90A4F17E251BF&compId=IPI65R380C6-DTE.pdf?ci_sign=f007af3a5f24dfc285ce3d7c33a1efe79db57adb
IPI65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP50R380CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABE0A807B4FD51CC&compId=IPP50R380CE-DTE.pdf?ci_sign=dd0098b3e3b779d20ea0de44e83faea4209ef4ec
IPP50R380CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
77+0.94 EUR
100+0.72 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IKQ50N120CH3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2B00CCB4CF00749&compId=IKQ50N120CH3.pdf?ci_sign=9948a7846a926ba14bfe5fba1a46f2adfd5af9d0
IKQ50N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKQ50N120CT2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2AF8E3A772C4749&compId=IKQ50N120CT2.pdf?ci_sign=d9110ec64f0b1c60eb595432e40ae4d175375e74
IKQ50N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 151W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7855TRPBF pVersion=0046&contRep=ZT&docId=E221ACE545C2EEF1A303005056AB0C4F&compId=irf7855pbf.pdf?ci_sign=b22b7175e73c8569212aaa050adf69f108f47aab
IRF7855TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7478TRPBF description pVersion=0046&contRep=ZT&docId=E221A57EAE5FF6F1A303005056AB0C4F&compId=irf7478pbf.pdf?ci_sign=69c24f3bee3cfebac042a9bf9dfebec91fe8a590
IRF7478TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC13DN30NSFDATMA1 Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 300V; 16A; 150W; PG-TDSON-8; SMT
Mounting: SMD
Gate charge: 30nC
On-state resistance: 114mΩ
Drain current: 16A
Gate-source voltage: 20V
Power dissipation: 150W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.53 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPA057N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99D203175811C&compId=IPA057N06N3G-DTE.pdf?ci_sign=8120eafd3b66acc9439c1bdc8098043f3d669323
IPA057N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
27+2.69 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 21
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IPA057N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4C6A3809C11C&compId=IPA057N08N3G-DTE.pdf?ci_sign=58e0ece08359e4f003949840794f3e64ceaa0a08
IPA057N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Case: TO220FP
Drain-source voltage: 80V
Drain current: 60A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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BTS142D pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697BAA6861D4469&compId=BTS142D.pdf?ci_sign=18ccc82bc95d63c9b532c3b881e9cfeaef927a86
BTS142D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Mounting: SMD
Case: TO252-3
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 59W
Technology: HITFET®
Kind of integrated circuit: low-side
On-state resistance: 23mΩ
Output voltage: 42V
Output current: 4.6A
Type of integrated circuit: power switch
auf Bestellung 849 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
38+1.89 EUR
40+1.79 EUR
250+1.72 EUR
Mindestbestellmenge: 25
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S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating voltage: 2.7...3.6V
Interface: QUAD SPI
Kind of memory: NOR Flash
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
44+1.63 EUR
Mindestbestellmenge: 41
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FB30R06W1E3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFDDC25858D3D7&compId=FB30R06W1E3.pdf?ci_sign=f0ac3378cf97532bc2bdcf462e9cd732b44ce192
FB30R06W1E3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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