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ISC045N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.23 EUR
Mindestbestellmenge: 5000
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IR2108STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 12500 Stücke:
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2500+0.87 EUR
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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 6÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 6...20V
auf Bestellung 2500 Stücke:
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2500+1.16 EUR
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IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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22+3.39 EUR
23+3.2 EUR
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IRFH8324TRPBF IRFH8324TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA57A0ED33F1A303005056AB0C4F&compId=irfh8324pbf.pdf?ci_sign=26d32e2604be70d7c6e34605b726e6dcdfb8b499 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 23A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
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IRFH5020TRPBF IRFH5020TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B53C7E3130F1A303005056AB0C4F&compId=irfh5020pbf.pdf?ci_sign=e3f6da846d9a1b0b329282270b8330e634586bda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5007TRPBF IRFH5007TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B4D3372896F1A303005056AB0C4F&compId=irfh5007pbf.pdf?ci_sign=3fe673522330afbe95ed07a0de695f2cb1c0d729 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8316TRPBF IRFH8316TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC9D730DB15EA&compId=IRFH8316TRPBF.pdf?ci_sign=0c6c58ad69febc9212f942304eab104b62140e16 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFHM8329TRPBF IRFHM8329TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCD1B98B2BF5EA&compId=IRFHM8329TRPBF.pdf?ci_sign=beb2593dcf1d1cccb9082c5760a87532530f3112 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.6W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5025TRPBF IRFH5025TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B55AF29459F1A303005056AB0C4F&compId=irfh5025pbf.pdf?ci_sign=f8c3624dd2c5c91b4633ec75c6e262d12a931b98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5215TRPBF IRFH5215TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B665D24C3DF1A303005056AB0C4F&compId=irfh5215pbf.pdf?ci_sign=700a7ad6fc2e7d49a82f6b799e9ffda69ebdb8f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
Produkt ist nicht verfügbar
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IRFH4210DTRPBF IRFH4210DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08D6AECB1E1EC&compId=irfh4210dpbf.pdf?ci_sign=674e3ff244880f6b4d370c542d09e3bdc285aa38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
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IRFH4251DTRPBF IRFH4251DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F0539B895741EC&compId=irfh4251dpbf.pdf?ci_sign=63d09c69c166cecc2695697a1e2de70eccbb9707 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH5053TRPBF IRFH5053TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B576FB1211F1A303005056AB0C4F&compId=irfh5053pbf.pdf?ci_sign=1773d09d6a2e0b2ee77dc3e70632d16bcd007a3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5210TRPBF IRFH5210TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B649F97DB5F1A303005056AB0C4F&compId=irfh5210pbf.pdf?ci_sign=0763deda32b5a1f8a5ae797c05cb601f0f7fac4d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH6200TRPBF IRFH6200TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B9747C2264F1A303005056AB0C4F&compId=irfh6200pbf.pdf?ci_sign=62fd898ae5f059ad6aae7ce81c47a4d0a9e78a88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7004TRPBF INFINEON TECHNOLOGIES irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
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IRFH7446TRPBF IRFH7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
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IRFH7545TRPBF INFINEON TECHNOLOGIES irfh7545pbf.pdf?fileId=5546d462533600a40153561f1e511ef1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
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IRFH7921TRPBF IRFH7921TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B17F1A6F5005056AB5A8F&compId=irfh7921pbf.pdf?ci_sign=265cab4cc1e9d070052d55d43365b805b7b78dd0 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7934TRPBF IRFH7934TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B9FC0F64AAF1A303005056AB0C4F&compId=irfh7934pbf.pdf?ci_sign=aeb4f9409c7cb3a83f718ce7a2c9661c84405b3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8201TRPBF IRFH8201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC7D71B7C55EA&compId=IRFH8311TRPBF.pdf?ci_sign=c6589ae941f40c6caeca3dd2cb522256801f38f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.4W
Produkt ist nicht verfügbar
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IGCM04F60GAXKMA1 IGCM04F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACB0509D4193D7&compId=IGCM04F60GA.pdf?ci_sign=806d21c01c2492d6102a8d9f29b6a2bea7793a7b Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.53 EUR
7+10.51 EUR
Mindestbestellmenge: 5
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BTF3080EJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF76602B68740C4&compId=BTF3080EJ.pdf?ci_sign=4917fbb88a9b9364cdde55b74718b3188d1ca5f3 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Case: PG-TDSO-8-31
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-on time: 1.35µs
Turn-off time: 2µs
On-state resistance: 71mΩ
Type of integrated circuit: power switch
Number of channels: 1
Power dissipation: 1.44W
Output current: 3A
Supply voltage: 3...5.5V DC
Kind of output: N-Channel
Output voltage: 40V
Kind of integrated circuit: low-side
Technology: HITFET®
Produkt ist nicht verfügbar
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IRFP4768PBF IRFP4768PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.17 EUR
24+3.09 EUR
Mindestbestellmenge: 23
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IPA320N20NM3SXKSA1 IPA320N20NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA320N20NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d1035e86e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Drain-source voltage: 200V
Drain current: 19A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 104A
Produkt ist nicht verfügbar
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC2B3EB5CC011C&compId=IPI320N20N3G-DTE.pdf?ci_sign=e0d429a5c98a4128004ad9b804e367269248b1b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BCR108E6433HTMA1 INFINEON TECHNOLOGIES bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; SC59; R1: 2.2kΩ; R2: 47kΩ
Application: automotive industry
Polarisation: bipolar
Case: SC59
Mounting: SMD
Type of transistor: NPN
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.044 EUR
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IRFB3806PBF IRFB3806PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 188 Stücke:
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60+1.21 EUR
108+0.67 EUR
114+0.63 EUR
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BSP62H6327XTSA1 INFINEON TECHNOLOGIES bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Category: PNP SMD Darlington transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 22000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.21 EUR
Mindestbestellmenge: 1000
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BGA616H6327XTSA1 INFINEON TECHNOLOGIES BGA616_Rev2011.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.92 EUR
Mindestbestellmenge: 3000
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC83BDC316811C&compId=IPP200N15N3G-DTE.pdf?ci_sign=38cb5325374ca3da97dcbd9df290e4f9562e6e8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
auf Bestellung 130 Stücke:
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36+2.02 EUR
46+1.57 EUR
49+1.49 EUR
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SPW20N60CFDFKSA1 INFINEON TECHNOLOGIES SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
auf Bestellung 164 Stücke:
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120+4.09 EUR
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IPP200N25N3GXKSA1 IPP200N25N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8807E583411C&compId=IPP200N25N3G-DTE.pdf?ci_sign=84a757fa8ec3825091407ee834af2c50c992735c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 290mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
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2500+0.81 EUR
Mindestbestellmenge: 2500
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IRS2104STRPBF INFINEON TECHNOLOGIES irs2104.pdf?fileId=5546d462533600a40153567633f727a1 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
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2500+1.46 EUR
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IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 50A; 136W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
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2500+0.97 EUR
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88EFCAE6AA31FD3D2&compId=IDW40G65C5B.pdf?ci_sign=0a626db6ad1624963aee2c716687e0ab59aec5a4 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 20A x2
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 4.1µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 87A
Semiconductor structure: common cathode; double
Power dissipation: 112W
Produkt ist nicht verfügbar
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB09C2A6E7411C&compId=IPP030N10N3G-DTE.pdf?ci_sign=63c7641476ffce0c4aa2c4b5d4a1581de0c6277a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
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16+4.62 EUR
18+4.16 EUR
19+3.95 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCW60BE6327 BCW60BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
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1311+0.054 EUR
Mindestbestellmenge: 1311
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IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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IPA028N08N3GXKSA1 IPA028N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DBBEC73D34143&compId=IPA028N08N3G.pdf?ci_sign=0e611bcbce53c07838c65e230b9d700045a9ae45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 62A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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CY62162G18-55BGXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
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BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB055809EC11C&compId=BSB280N15NZ3G-DTE.pdf?ci_sign=9edfd8e4d09931dafcfcdb3961b4bb1c7e9b77ff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
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BCW68FE6327 BCW68FE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
385+0.19 EUR
581+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 278
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BCW68GE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
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3000+0.062 EUR
Mindestbestellmenge: 3000
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CY8C4745AZI-S413 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
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250+6.41 EUR
Mindestbestellmenge: 250
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ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.79 EUR
Mindestbestellmenge: 4000
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ITS4140N ITS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 88 Stücke:
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40+1.79 EUR
45+1.62 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 11.5...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DMTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DSTRPBF INFINEON TECHNOLOGIES Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Integrated circuit features: MOSFET
Mounting: SMD
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.97 EUR
Mindestbestellmenge: 1000
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IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
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ISC045N03L5SATMA1 Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.23 EUR
Mindestbestellmenge: 5000
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IR2108STRPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.87 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET; 6÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 6...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4229PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
22+3.39 EUR
23+3.2 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8324TRPBF pVersion=0046&contRep=ZT&docId=E221BA57A0ED33F1A303005056AB0C4F&compId=irfh8324pbf.pdf?ci_sign=26d32e2604be70d7c6e34605b726e6dcdfb8b499
IRFH8324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 23A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
Produkt ist nicht verfügbar
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IRFH5020TRPBF pVersion=0046&contRep=ZT&docId=E221B53C7E3130F1A303005056AB0C4F&compId=irfh5020pbf.pdf?ci_sign=e3f6da846d9a1b0b329282270b8330e634586bda
IRFH5020TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5007TRPBF pVersion=0046&contRep=ZT&docId=E221B4D3372896F1A303005056AB0C4F&compId=irfh5007pbf.pdf?ci_sign=3fe673522330afbe95ed07a0de695f2cb1c0d729
IRFH5007TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8316TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC9D730DB15EA&compId=IRFH8316TRPBF.pdf?ci_sign=0c6c58ad69febc9212f942304eab104b62140e16
IRFH8316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFHM8329TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCD1B98B2BF5EA&compId=IRFHM8329TRPBF.pdf?ci_sign=beb2593dcf1d1cccb9082c5760a87532530f3112
IRFHM8329TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.6W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5025TRPBF pVersion=0046&contRep=ZT&docId=E221B55AF29459F1A303005056AB0C4F&compId=irfh5025pbf.pdf?ci_sign=f8c3624dd2c5c91b4633ec75c6e262d12a931b98
IRFH5025TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5215TRPBF pVersion=0046&contRep=ZT&docId=E221B665D24C3DF1A303005056AB0C4F&compId=irfh5215pbf.pdf?ci_sign=700a7ad6fc2e7d49a82f6b799e9ffda69ebdb8f7
IRFH5215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8325TRPBF pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99
IRFH8325TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4210DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08D6AECB1E1EC&compId=irfh4210dpbf.pdf?ci_sign=674e3ff244880f6b4d370c542d09e3bdc285aa38
IRFH4210DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH4251DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F0539B895741EC&compId=irfh4251dpbf.pdf?ci_sign=63d09c69c166cecc2695697a1e2de70eccbb9707
IRFH4251DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH5053TRPBF pVersion=0046&contRep=ZT&docId=E221B576FB1211F1A303005056AB0C4F&compId=irfh5053pbf.pdf?ci_sign=1773d09d6a2e0b2ee77dc3e70632d16bcd007a3c
IRFH5053TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5210TRPBF pVersion=0046&contRep=ZT&docId=E221B649F97DB5F1A303005056AB0C4F&compId=irfh5210pbf.pdf?ci_sign=0763deda32b5a1f8a5ae797c05cb601f0f7fac4d
IRFH5210TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH6200TRPBF pVersion=0046&contRep=ZT&docId=E221B9747C2264F1A303005056AB0C4F&compId=irfh6200pbf.pdf?ci_sign=62fd898ae5f059ad6aae7ce81c47a4d0a9e78a88
IRFH6200TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7004TRPBF irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a
IRFH7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Trade name: StrongIRFET
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Produkt ist nicht verfügbar
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IRFH7545TRPBF irfh7545pbf.pdf?fileId=5546d462533600a40153561f1e511ef1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Produkt ist nicht verfügbar
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IRFH7921TRPBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284B17F1A6F5005056AB5A8F&compId=irfh7921pbf.pdf?ci_sign=265cab4cc1e9d070052d55d43365b805b7b78dd0
IRFH7921TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7934TRPBF pVersion=0046&contRep=ZT&docId=E221B9FC0F64AAF1A303005056AB0C4F&compId=irfh7934pbf.pdf?ci_sign=aeb4f9409c7cb3a83f718ce7a2c9661c84405b3e
IRFH7934TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8201TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09
IRFH8201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8311TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC7D71B7C55EA&compId=IRFH8311TRPBF.pdf?ci_sign=c6589ae941f40c6caeca3dd2cb522256801f38f7
IRFH8311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8321TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae
IRFH8321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.4W
Produkt ist nicht verfügbar
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IGCM04F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACB0509D4193D7&compId=IGCM04F60GA.pdf?ci_sign=806d21c01c2492d6102a8d9f29b6a2bea7793a7b
IGCM04F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.53 EUR
7+10.51 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BTF3080EJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF76602B68740C4&compId=BTF3080EJ.pdf?ci_sign=4917fbb88a9b9364cdde55b74718b3188d1ca5f3
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Case: PG-TDSO-8-31
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-on time: 1.35µs
Turn-off time: 2µs
On-state resistance: 71mΩ
Type of integrated circuit: power switch
Number of channels: 1
Power dissipation: 1.44W
Output current: 3A
Supply voltage: 3...5.5V DC
Kind of output: N-Channel
Output voltage: 40V
Kind of integrated circuit: low-side
Technology: HITFET®
Produkt ist nicht verfügbar
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IRFP4768PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d
IRFP4768PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP320N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379
IPP320N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
24+3.09 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IPA320N20NM3SXKSA1 Infineon-IPA320N20NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d1035e86e3a
IPA320N20NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Drain-source voltage: 200V
Drain current: 19A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 104A
Produkt ist nicht verfügbar
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IPI320N20N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC2B3EB5CC011C&compId=IPI320N20N3G-DTE.pdf?ci_sign=e0d429a5c98a4128004ad9b804e367269248b1b5
IPI320N20N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BCR108E6433HTMA1 bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; SC59; R1: 2.2kΩ; R2: 47kΩ
Application: automotive industry
Polarisation: bipolar
Case: SC59
Mounting: SMD
Type of transistor: NPN
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.044 EUR
Mindestbestellmenge: 10000
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IRFB3806PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811
IRFB3806PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
60+1.21 EUR
108+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 41
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BSP62H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 22000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.21 EUR
Mindestbestellmenge: 1000
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BGA616H6327XTSA1 BGA616_Rev2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.92 EUR
Mindestbestellmenge: 3000
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IPP200N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC83BDC316811C&compId=IPP200N15N3G-DTE.pdf?ci_sign=38cb5325374ca3da97dcbd9df290e4f9562e6e8f
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
36+2.02 EUR
46+1.57 EUR
49+1.49 EUR
Mindestbestellmenge: 32
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.55 EUR
120+4.09 EUR
Mindestbestellmenge: 30
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IPP200N25N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8807E583411C&compId=IPP200N25N3G-DTE.pdf?ci_sign=84a757fa8ec3825091407ee834af2c50c992735c
IPP200N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 290mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.81 EUR
Mindestbestellmenge: 2500
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IRS2104STRPBF irs2104.pdf?fileId=5546d462533600a40153567633f727a1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.46 EUR
Mindestbestellmenge: 2500
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IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 50A; 136W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.97 EUR
Mindestbestellmenge: 2500
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IDW40G65C5BXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88EFCAE6AA31FD3D2&compId=IDW40G65C5B.pdf?ci_sign=0a626db6ad1624963aee2c716687e0ab59aec5a4
IDW40G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 20A x2
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 4.1µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 87A
Semiconductor structure: common cathode; double
Power dissipation: 112W
Produkt ist nicht verfügbar
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IPP030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB09C2A6E7411C&compId=IPP030N10N3G-DTE.pdf?ci_sign=63c7641476ffce0c4aa2c4b5d4a1581de0c6277a
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
18+4.16 EUR
19+3.95 EUR
Mindestbestellmenge: 16
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IPI030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCW60BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49
BCW60BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1311+0.054 EUR
Mindestbestellmenge: 1311
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IPA028N04NM3SXKSA1 Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6
IPA028N04NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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IPA028N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DBBEC73D34143&compId=IPA028N08N3G.pdf?ci_sign=0e611bcbce53c07838c65e230b9d700045a9ae45
IPA028N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 62A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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CY62162G18-55BGXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
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BSB280N15NZ3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB055809EC11C&compId=BSB280N15NZ3G-DTE.pdf?ci_sign=9edfd8e4d09931dafcfcdb3961b4bb1c7e9b77ff
BSB280N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68FE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381
BCW68FE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
385+0.19 EUR
581+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 278
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BCW68GE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
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CY8C4745AZI-S413 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+6.41 EUR
Mindestbestellmenge: 250
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ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.79 EUR
Mindestbestellmenge: 4000
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ITS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
45+1.62 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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IRS23364DJPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 11.5...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DMTRPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DSTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Integrated circuit features: MOSFET
Mounting: SMD
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.97 EUR
Mindestbestellmenge: 1000
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IRF9952TRPBF pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
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