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IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 290mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
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2500+0.81 EUR
Mindestbestellmenge: 2500
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IRS2104STRPBF INFINEON TECHNOLOGIES irs2104.pdf?fileId=5546d462533600a40153567633f727a1 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+0.82 EUR
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
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2500+1.46 EUR
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IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 50A; 136W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
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2500+0.97 EUR
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88EFCAE6AA31FD3D2&compId=IDW40G65C5B.pdf?ci_sign=0a626db6ad1624963aee2c716687e0ab59aec5a4 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 20A x2
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 4.1µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 87A
Semiconductor structure: common cathode; double
Power dissipation: 112W
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB09C2A6E7411C&compId=IPP030N10N3G-DTE.pdf?ci_sign=63c7641476ffce0c4aa2c4b5d4a1581de0c6277a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
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16+4.62 EUR
18+4.16 EUR
19+3.95 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCW60BE6327 BCW60BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
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1311+0.054 EUR
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IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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IPA028N08N3GXKSA1 IPA028N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DBBEC73D34143&compId=IPA028N08N3G.pdf?ci_sign=0e611bcbce53c07838c65e230b9d700045a9ae45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 62A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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CY62162G18-55BGXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
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BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB055809EC11C&compId=BSB280N15NZ3G-DTE.pdf?ci_sign=9edfd8e4d09931dafcfcdb3961b4bb1c7e9b77ff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
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BCW68FE6327 BCW68FE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
385+0.19 EUR
581+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 278
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BCW68GE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
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3000+0.062 EUR
Mindestbestellmenge: 3000
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CY8C4745AZI-S413 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
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250+6.41 EUR
Mindestbestellmenge: 250
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ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.79 EUR
Mindestbestellmenge: 4000
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ITS4140N ITS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 88 Stücke:
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40+1.79 EUR
45+1.62 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 11.5...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
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IRS2336DMTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DSTRPBF INFINEON TECHNOLOGIES Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Integrated circuit features: MOSFET
Mounting: SMD
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 1000 Stücke:
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1000+2.97 EUR
Mindestbestellmenge: 1000
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IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
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S80KS5122GABHA020 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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FS150R17PE4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8CE6744FE893D7&compId=FS150R17PE4.pdf?ci_sign=dc87d2e491ab60f29b466dd3bc0bed102dd44ebf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IPD082N10N3GATMA1 IPD082N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAE120237C411C&compId=IPD082N10N3G-DTE.pdf?ci_sign=1b478a229b725d8d0d4ac482a6f0ab481602057e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R160C6ATMA1 IPB60R160C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59410BDC8D871BF&compId=IPB60R160C6-DTE.pdf?ci_sign=5c5efc056f80271bdab1ef507a9988b8f4533ca1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD07N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.86 EUR
Mindestbestellmenge: 2500
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IPP086N10N3GXKSA1 IPP086N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA0EC7C19C11C&compId=IPP086N10N3G-DTE.pdf?ci_sign=859c588ee952b88cf7e28a5af3d731bc43f02f13 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBTA06E6327 SMBTA06E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FEAF36FDA1C469&compId=SMBTA06E6327.pdf?ci_sign=14f04b1e8abaa7a429cf80f173b2a6a936affcb8 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IPB90R340C3ATMA1 IPB90R340C3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC57757D3BECFA8&compId=IPB90R340C3ATMA1-DTE.pdf?ci_sign=354196e2d6ab4ace41d8c12008f60e0ed4c819b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 900V
Drain current: 9.5A
On-state resistance: 0.34Ω
Mounting: SMD
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB90R340C3ATMA2 INFINEON TECHNOLOGIES Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.43 EUR
Mindestbestellmenge: 1000
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DEMO SENSE2GOL INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
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BSC014N06NSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 156W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.75 EUR
Mindestbestellmenge: 5000
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IRL40T209ATMA2 INFINEON TECHNOLOGIES Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL40S212ARMA1 INFINEON TECHNOLOGIES Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD340N20SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE83D1EF993D1&compId=DD340N20S.pdf?ci_sign=f033c129c6fd04b413304b6a72af59500a21a2e1 Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Load current: 330A
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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IDV15E65D2XKSA1 IDV15E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E70A0430B96469&compId=IDV15E65D2.pdf?ci_sign=09b613e7d84ad062c310e90619f0a43db62b5b22 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.34 EUR
Mindestbestellmenge: 53
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IDW15E65D2FKSA1 IDW15E65D2FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E70E1CE434E469&compId=IDW15E65D2.pdf?ci_sign=0608f17b80cf4a063b1d6502a44ae9ebe922f600 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C1D6AF8FDAF1A303005056AB0C4F&compId=irfr2407pbf.pdf?ci_sign=39f99bd64b949188ae7d518c573599e227ec7fae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6804E6327HTSA1 BAT6804E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
auf Bestellung 5175 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
196+0.37 EUR
224+0.32 EUR
232+0.31 EUR
290+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 162
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BCR401U BCR401U INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C047218843E8F1A6F5005056AB5A8F&compId=bcr401u.pdf?ci_sign=8c4875baf069b50202c526638961a01025db956a Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Output current: 60mA
Operating voltage: 1.4...40V DC
Number of channels: 1
auf Bestellung 41 Stücke:
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BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6AB0B73348469&compId=BCR08PNH6327.pdf?ci_sign=33c762796ef2bb8acd2b0c3413b906d9aa06ed86 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
340+0.21 EUR
380+0.19 EUR
430+0.17 EUR
495+0.15 EUR
520+0.14 EUR
Mindestbestellmenge: 340
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BCR08PNH6327XTSA1 INFINEON TECHNOLOGIES bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.084 EUR
Mindestbestellmenge: 3000
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IPD85P04P407ATMA2 INFINEON TECHNOLOGIES Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.93 EUR
Mindestbestellmenge: 2500
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84ED23234910B&compId=SN7002NH6327XTSA2.pdf?ci_sign=d6285ac03f0bea3b7779feaacb4ca2f8607ef04b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
On-state resistance: 5Ω
Drain current: 0.2A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
371+0.19 EUR
538+0.13 EUR
633+0.11 EUR
1530+0.047 EUR
1613+0.044 EUR
Mindestbestellmenge: 250
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TLE75602ESDXUMA1 INFINEON TECHNOLOGIES Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.86 EUR
Mindestbestellmenge: 3000
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IPG20N06S415ATMA2 INFINEON TECHNOLOGIES Infineon-IPG20N06S4_15-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf657f886c19 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.84 EUR
Mindestbestellmenge: 5000
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IPD220N06L3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.34 EUR
Mindestbestellmenge: 2500
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TLD23313EPXUMA1 TLD23313EPXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE988DE4103AF52D8BF&compId=TLD23313EP.pdf?ci_sign=5cce7fd18c7ca023bdc85ef01e5fd279bef04537 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 60mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 60mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLD2314ELXUMA1 TLD2314ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C109EAFE3378BF&compId=TLD2314EL.pdf?ci_sign=31649890ecb7f7f29014e26236783d28a983588c Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLD2311ELXUMA1 INFINEON TECHNOLOGIES Infineon-TLD2311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53abd53acc Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.73 EUR
Mindestbestellmenge: 2500
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ITS716G ITS716G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698ADC90B0F2469&compId=ITS716G.pdf?ci_sign=5c0b2b70d0440cd80f3dc3ac79724784534b9258 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 0.11Ω
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 11
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IRSM836-024MATR IRSM836-024MATR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF14B6DE88815EA&compId=IRSM836-024MATR.pdf?ci_sign=56c083589115c54c17e0717f86f2e27acf8be7a1 Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BABA01FCD4A11C&compId=IPB042N10N3G-DTE.pdf?ci_sign=03163bd03bda3b852bbe6f9c1de3fb160b935fb0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSR92PH6327XTSA1 BSR92PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFAC3D69326745&compId=BSR92PH6327XTSA1.pdf?ci_sign=cfe038ab9d0326d3e3c745cb156f85fa40ca8969 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
133+0.54 EUR
182+0.39 EUR
338+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 99
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IPB039N10N3GATMA1 IPB039N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB6625D5AA11C&compId=IPB039N10N3G-DTE.pdf?ci_sign=c1734f346b1519c8fdd37045c17c2fdcbb199a8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77ADCA613611C&compId=BSS159NH6327XTSA2.pdf?ci_sign=a1987899b02136e077038fc3e5ada84cd40cf250 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
On-state resistance: 8Ω
Drain current: 0.23A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 1247 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
183+0.39 EUR
236+0.3 EUR
291+0.25 EUR
421+0.17 EUR
439+0.16 EUR
Mindestbestellmenge: 129
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IMW65R072M1HXKSA1 IMW65R072M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.27 EUR
6+12.87 EUR
Mindestbestellmenge: 5
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CY14V101QS-BK108XI INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Produkt ist nicht verfügbar
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CY14V101QS-BK108XIT INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: reel; tape
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Produkt ist nicht verfügbar
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 290mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.29A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.81 EUR
Mindestbestellmenge: 2500
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IRS2104STRPBF irs2104.pdf?fileId=5546d462533600a40153567633f727a1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.46 EUR
Mindestbestellmenge: 2500
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IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 50A; 136W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.97 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IDW40G65C5BXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88EFCAE6AA31FD3D2&compId=IDW40G65C5B.pdf?ci_sign=0a626db6ad1624963aee2c716687e0ab59aec5a4
IDW40G65C5BXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 20A x2
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 4.1µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 87A
Semiconductor structure: common cathode; double
Power dissipation: 112W
Produkt ist nicht verfügbar
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IPP030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB09C2A6E7411C&compId=IPP030N10N3G-DTE.pdf?ci_sign=63c7641476ffce0c4aa2c4b5d4a1581de0c6277a
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
18+4.16 EUR
19+3.95 EUR
Mindestbestellmenge: 16
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IPI030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCW60BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49
BCW60BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1311+0.054 EUR
Mindestbestellmenge: 1311
Im Einkaufswagen  Stück im Wert von  UAH
IPA028N04NM3SXKSA1 Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6
IPA028N04NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
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IPA028N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DBBEC73D34143&compId=IPA028N08N3G.pdf?ci_sign=0e611bcbce53c07838c65e230b9d700045a9ae45
IPA028N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 62A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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CY62162G18-55BGXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB280N15NZ3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB055809EC11C&compId=BSB280N15NZ3G-DTE.pdf?ci_sign=9edfd8e4d09931dafcfcdb3961b4bb1c7e9b77ff
BSB280N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
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BCW68FE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381
BCW68FE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
385+0.19 EUR
581+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 278
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BCW68GE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4745AZI-S413 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+6.41 EUR
Mindestbestellmenge: 250
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ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.79 EUR
Mindestbestellmenge: 4000
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ITS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
45+1.62 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 40
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IRS23364DJPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 11.5...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: tube
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DMTRPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: MLPQ34
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Produkt ist nicht verfügbar
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IRS2336DSTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.2A
Number of channels: 6
Integrated circuit features: MOSFET
Mounting: SMD
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.97 EUR
Mindestbestellmenge: 1000
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IRF9952TRPBF pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Case: SO8
Type of transistor: N/P-MOSFET
Kind of package: reel
Polarisation: unipolar
On-state resistance: 0.1/0.25Ω
Power dissipation: 2W
Drain current: 3.5/-2.3A
Gate-source voltage: ±30V
Drain-source voltage: 30/-30V
Produkt ist nicht verfügbar
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S80KS5122GABHA020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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FS150R17PE4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8CE6744FE893D7&compId=FS150R17PE4.pdf?ci_sign=dc87d2e491ab60f29b466dd3bc0bed102dd44ebf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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IPD082N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAE120237C411C&compId=IPD082N10N3G-DTE.pdf?ci_sign=1b478a229b725d8d0d4ac482a6f0ab481602057e
IPD082N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R160C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59410BDC8D871BF&compId=IPB60R160C6-DTE.pdf?ci_sign=5c5efc056f80271bdab1ef507a9988b8f4533ca1
IPB60R160C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.86 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP086N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA0EC7C19C11C&compId=IPP086N10N3G-DTE.pdf?ci_sign=859c588ee952b88cf7e28a5af3d731bc43f02f13
IPP086N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMBTA06E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587FEAF36FDA1C469&compId=SMBTA06E6327.pdf?ci_sign=14f04b1e8abaa7a429cf80f173b2a6a936affcb8
SMBTA06E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IPB90R340C3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC57757D3BECFA8&compId=IPB90R340C3ATMA1-DTE.pdf?ci_sign=354196e2d6ab4ace41d8c12008f60e0ed4c819b9
IPB90R340C3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Case: PG-TO263-3
Drain-source voltage: 900V
Drain current: 9.5A
On-state resistance: 0.34Ω
Mounting: SMD
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.43 EUR
Mindestbestellmenge: 1000
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DEMO SENSE2GOL
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Produkt ist nicht verfügbar
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BSC014N06NSTATMA1 Infineon-BSC014N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc80160546e79762cbe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 156W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.75 EUR
Mindestbestellmenge: 5000
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IRL40T209ATMA2 Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL40S212ARMA1 Infineon-IRL40S212-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fed0ddc3062d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD340N20SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE83D1EF993D1&compId=DD340N20S.pdf?ci_sign=f033c129c6fd04b413304b6a72af59500a21a2e1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Load current: 330A
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Produkt ist nicht verfügbar
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IDV15E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E70A0430B96469&compId=IDV15E65D2.pdf?ci_sign=09b613e7d84ad062c310e90619f0a43db62b5b22
IDV15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.34 EUR
Mindestbestellmenge: 53
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IDW15E65D2FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E70E1CE434E469&compId=IDW15E65D2.pdf?ci_sign=0608f17b80cf4a063b1d6502a44ae9ebe922f600
IDW15E65D2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IRFR2407TRPBF pVersion=0046&contRep=ZT&docId=E221C1D6AF8FDAF1A303005056AB0C4F&compId=irfr2407pbf.pdf?ci_sign=39f99bd64b949188ae7d518c573599e227ec7fae
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT6804E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT6804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
auf Bestellung 5175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
196+0.37 EUR
224+0.32 EUR
232+0.31 EUR
290+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 162
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BCR401U pVersion=0046&contRep=ZT&docId=E1C047218843E8F1A6F5005056AB5A8F&compId=bcr401u.pdf?ci_sign=8c4875baf069b50202c526638961a01025db956a
BCR401U
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Mounting: SMD
Topology: single transistor
Output current: 60mA
Operating voltage: 1.4...40V DC
Number of channels: 1
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
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BCR08PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6AB0B73348469&compId=BCR08PNH6327.pdf?ci_sign=33c762796ef2bb8acd2b0c3413b906d9aa06ed86
BCR08PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
340+0.21 EUR
380+0.19 EUR
430+0.17 EUR
495+0.15 EUR
520+0.14 EUR
Mindestbestellmenge: 340
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BCR08PNH6327XTSA1 bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.084 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPD85P04P407ATMA2 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.93 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SN7002NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84ED23234910B&compId=SN7002NH6327XTSA2.pdf?ci_sign=d6285ac03f0bea3b7779feaacb4ca2f8607ef04b
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
On-state resistance: 5Ω
Drain current: 0.2A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
371+0.19 EUR
538+0.13 EUR
633+0.11 EUR
1530+0.047 EUR
1613+0.044 EUR
Mindestbestellmenge: 250
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TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.86 EUR
Mindestbestellmenge: 3000
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IPG20N06S415ATMA2 Infineon-IPG20N06S4_15-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf657f886c19
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.84 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLD23313EPXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE988DE4103AF52D8BF&compId=TLD23313EP.pdf?ci_sign=5cce7fd18c7ca023bdc85ef01e5fd279bef04537
TLD23313EPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 60mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 60mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLD2314ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C109EAFE3378BF&compId=TLD2314EL.pdf?ci_sign=31649890ecb7f7f29014e26236783d28a983588c
TLD2314ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLD2311ELXUMA1 Infineon-TLD2311EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e53abd53acc
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.73 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
ITS716G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698ADC90B0F2469&compId=ITS716G.pdf?ci_sign=5c0b2b70d0440cd80f3dc3ac79724784534b9258
ITS716G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 0.11Ω
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 11
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IRSM836-024MATR pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF14B6DE88815EA&compId=IRSM836-024MATR.pdf?ci_sign=56c083589115c54c17e0717f86f2e27acf8be7a1
IRSM836-024MATR
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BABA01FCD4A11C&compId=IPB042N10N3G-DTE.pdf?ci_sign=03163bd03bda3b852bbe6f9c1de3fb160b935fb0
IPB042N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSR92PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFAC3D69326745&compId=BSR92PH6327XTSA1.pdf?ci_sign=cfe038ab9d0326d3e3c745cb156f85fa40ca8969
BSR92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
133+0.54 EUR
182+0.39 EUR
338+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 99
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IPB039N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB6625D5AA11C&compId=IPB039N10N3G-DTE.pdf?ci_sign=c1734f346b1519c8fdd37045c17c2fdcbb199a8b
IPB039N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Polarisation: unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 214W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B77ADCA613611C&compId=BSS159NH6327XTSA2.pdf?ci_sign=a1987899b02136e077038fc3e5ada84cd40cf250
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
On-state resistance: 8Ω
Drain current: 0.23A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 1247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
183+0.39 EUR
236+0.3 EUR
291+0.25 EUR
421+0.17 EUR
439+0.16 EUR
Mindestbestellmenge: 129
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IMW65R072M1HXKSA1 Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482
IMW65R072M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 69A
Power dissipation: 96W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.27 EUR
6+12.87 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-BK108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY14V101QS-BK108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: reel; tape
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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