Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151640) > Seite 2525 nach 2528
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XMC1201Q040F0200ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH Case: PG-VQFN-40 Memory: 16kB SRAM; 200kB FLASH Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 |
Produkt ist nicht verfügbar |
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XMC1202Q040X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-40 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 26 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 |
Produkt ist nicht verfügbar |
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XMC1202T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1200 |
Produkt ist nicht verfügbar |
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IRFS3307ZTRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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S25FL512SDPBHBC10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; BGA24 Mounting: SMD Operating temperature: -40...105°C Case: BGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: QUAD SPI Kind of memory: NOR Flash Application: automotive Kind of package: in-tray Operating frequency: 66MHz Kind of interface: serial Memory: 512Mb FLASH |
Produkt ist nicht verfügbar |
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S70FL01GSAGBHBC10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24 Mounting: SMD Operating temperature: -40...105°C Case: BGA24 Operating voltage: 2.7...3.6V Type of integrated circuit: FLASH memory Interface: CFI; SPI Kind of memory: NOR Flash Application: automotive Kind of package: in-tray Operating frequency: 133MHz Kind of interface: serial Memory: 1Gb FLASH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF8707TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.1A Pulsed drain current: 88A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSP322PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223 Drain-source voltage: -100V Drain current: -1A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 |
auf Bestellung 881 Stücke: Lieferzeit 14-21 Tag (e) |
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TLS202B1MBV50HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 5V Output current: 0.15A Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 2.7...18V Tolerance: ±3% |
Produkt ist nicht verfügbar |
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TLS203B0EJVXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷20V; 0.3A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.75V Output voltage: 1.22...20V Output current: 0.3A Case: PG-DSO-8-EP Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Input voltage: 2.3...20V |
Produkt ist nicht verfügbar |
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IRFR3411TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 130W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF1324PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 353A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF1324STRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 340A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRF1324WL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 382A Power dissipation: 300W Case: TO262WL Gate-source voltage: ±20V On-state resistance: 1.16mΩ Mounting: THT Gate charge: 0.12µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPL60R210P6AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2ED21814S06JXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2ED2181S06FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2ED2182S06FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2ED21834S06JXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2ED2183S06FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2ED21844S06JXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Supply voltage: 10...20V Output current: -2.5...2.5A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFB3307PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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TLF50251EL | INFINEON TECHNOLOGIES |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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TLF50201EL | INFINEON TECHNOLOGIES |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP4066DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 454W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGP4066D1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 90A Power dissipation: 227W Case: TO247AC Mounting: THT Kind of package: tube Technology: Trench Gate-emitter voltage: ±20V Pulsed collector current: 225A Turn-on time: 115ns Turn-off time: 320ns Gate charge: 225nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IMBG120R045M1HXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: IMBG120R045M1HXTMA1 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IMW65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 100A Power dissipation: 125W Case: TO247 Gate-source voltage: -5...23V On-state resistance: 63mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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CY8C3246AXI-131 | INFINEON TECHNOLOGIES |
![]() Description: CY8C3246AXI-131 |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR402WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Case: SOT343 Mounting: SMD Output current: 20...60mA Number of channels: 1 Operating voltage: 1.2...18V DC Integrated circuit features: linear dimming Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver Topology: single transistor |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1837 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA083N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
auf Bestellung 358 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 37.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP083N10N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 100W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4104F64K64ABXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...125°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4104F64F64ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4108F64K64ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...125°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4100F64F128ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 128kB FLASH Operating temperature: -40...85°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4400F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 31 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4400 Memory: 80kB SRAM; 256kB FLASH Operating temperature: -40...85°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4400F64K512ABXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 31 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4400 Memory: 80kB SRAM; 512kB FLASH Operating temperature: -40...125°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4402F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 31 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4400 Memory: 80kB SRAM; 256kB FLASH Operating temperature: -40...85°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4104F64F128ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 128kB FLASH Operating temperature: -40...85°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4104F64K128ABXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 128kB FLASH Operating temperature: -40...125°C Case: PG-LQFP-64 |
Produkt ist nicht verfügbar |
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XMC4104Q48F64ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...85°C Case: PG-VQFN-48 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4104Q48K64ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...125°C Case: PG-VQFN-48 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4108Q48K64ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...125°C Case: PG-VQFN-48 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS6142D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5 Supply voltage: 5.5...38V DC On-state resistance: 10mΩ Output current: 7A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Mounting: SMD Case: TO252-5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7458TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
AIDK12S65C5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 12A; 62W Power dissipation: 62W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Case: PG-TO263-2 Max. off-state voltage: 650V Max. forward voltage: 2.1V Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 14µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
S29JL064J70TFI003 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BTS3134N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS3118N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -10...20V On-state resistance: 59mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -7...20V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IFF450B12ME4PB11BPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Application: for UPS; Inverter; motors; photovoltaics Topology: IGBT half-bridge; NTC thermistor Technology: EconoDUAL™ 3 Type of semiconductor module: IGBT Electrical mounting: Press-Fit; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Max. off-state voltage: 1.2kV Case: AG-ECONOD-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IKCM30F60GDXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 512 Stücke: Lieferzeit 14-21 Tag (e) |
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IGCM20F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: DIP 36x21 (PG-DIP-24) Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IAUC28N08S5L230ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 20A Pulsed drain current: 112A Power dissipation: 38W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
XMC1201Q040F0200ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Produkt ist nicht verfügbar
Im Einkaufswagen
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XMC1202Q040X0032ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC1202T016X0032ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1200
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS3307ZTRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 0.96 EUR |
S25FL512SDPBHBC10 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; BGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 66MHz
Kind of interface: serial
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; BGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 66MHz
Kind of interface: serial
Memory: 512Mb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S70FL01GSAGBHBC10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 133MHz
Kind of interface: serial
Memory: 1Gb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Mounting: SMD
Operating temperature: -40...105°C
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: in-tray
Operating frequency: 133MHz
Kind of interface: serial
Memory: 1Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF8707TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP322PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
109+ | 0.66 EUR |
121+ | 0.59 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
TLS202B1MBV50HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 2.7...18V
Tolerance: ±3%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 5V
Output current: 0.15A
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 2.7...18V
Tolerance: ±3%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLS203B0EJVXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷20V; 0.3A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.75V
Output voltage: 1.22...20V
Output current: 0.3A
Case: PG-DSO-8-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 2.3...20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷20V; 0.3A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.75V
Output voltage: 1.22...20V
Output current: 0.3A
Case: PG-DSO-8-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 2.3...20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR3411TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF1324PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
AUIRF1324STRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF1324WL |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPL60R210P6AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED21814S06JXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED2181S06FXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED2182S06FXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED21834S06JXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED2183S06FXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2ED21844S06JXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FS75R17KE3BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB3307PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
31+ | 2.33 EUR |
38+ | 1.93 EUR |
52+ | 1.4 EUR |
54+ | 1.33 EUR |
TLF50251EL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
TLF50201EL |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRGP4066DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 454W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 454W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRGP4066D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Mounting: THT
Kind of package: tube
Technology: Trench
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Gate charge: 225nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Mounting: THT
Kind of package: tube
Technology: Trench
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Gate charge: 225nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IMBG120R045M1HXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IMBG120R045M1HXTMA1
Category: Transistors - Unclassified
Description: IMBG120R045M1HXTMA1
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 9.64 EUR |
IMW65R048M1HXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3246AXI-131 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C3246AXI-131
Category: Integrated circuits - Unclassified
Description: CY8C3246AXI-131
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 14.1 EUR |
BCR402WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
391+ | 0.18 EUR |
443+ | 0.16 EUR |
511+ | 0.14 EUR |
544+ | 0.13 EUR |
IPD12CN10NGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1837 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.27 EUR |
34+ | 2.13 EUR |
43+ | 1.7 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
100+ | 1.17 EUR |
200+ | 1.16 EUR |
IPA083N10NM5SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.14 EUR |
38+ | 1.93 EUR |
43+ | 1.7 EUR |
47+ | 1.53 EUR |
50+ | 1.44 EUR |
IPA086N10N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
IPI086N10N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
54+ | 1.34 EUR |
75+ | 0.96 EUR |
80+ | 0.9 EUR |
IPP083N10N5AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC4104F64K64ABXQSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
XMC4104F64F64ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
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XMC4108F64K64ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
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XMC4100F64F128ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
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XMC4400F64F256ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
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XMC4400F64K512ABXQSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
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XMC4402F64F256ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 31
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4400
Memory: 80kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
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XMC4104F64F128ABXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
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XMC4104F64K128ABXQSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...125°C
Case: PG-LQFP-64
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XMC4104Q48F64ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Case: PG-VQFN-48
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XMC4104Q48K64ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-VQFN-48
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XMC4108Q48K64ABXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...125°C
Case: PG-VQFN-48
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BTS6142D |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Supply voltage: 5.5...38V DC
On-state resistance: 10mΩ
Output current: 7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: TO252-5
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Supply voltage: 5.5...38V DC
On-state resistance: 10mΩ
Output current: 7A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: TO252-5
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IRF7458TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AIDK12S65C5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 12A; 62W
Power dissipation: 62W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 14µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 12A; 62W
Power dissipation: 62W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 14µA
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S29JL064J70TFI003 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BTS3134N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
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BTS3118N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
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IMW120R045M1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -10...20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -10...20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AIMW120R045M1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IFF450B12ME4PB11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; motors; photovoltaics
Topology: IGBT half-bridge; NTC thermistor
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Case: AG-ECONOD-6
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; motors; photovoltaics
Topology: IGBT half-bridge; NTC thermistor
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Case: AG-ECONOD-6
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IKCM30F60GDXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 21.64 EUR |
28+ | 19.46 EUR |
IGCM20F60GAXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
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IAUC28N08S5L230ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Pulsed drain current: 112A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; Idm: 112A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Pulsed drain current: 112A
Power dissipation: 38W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH