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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
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IRFS52N15DTRLP IRFS52N15DTRLP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEEF50A44F5B5EA&compId=IRFS52N15DTRLP.pdf?ci_sign=e6b4ae92e1807fa44abcf6d34c99a50ce0f0c20e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS52N15DTRRP IRFS52N15DTRRP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4842F86155EA&compId=IRFS52N15DTRRP.pdf?ci_sign=ebc254e558cc0929f63fa9dc13b00da8547b2f4d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE5028CXGAD28HAMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: TLE5028CXGAD28HAMA1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1500+4.08 EUR
Mindestbestellmenge: 1500
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CYBLE-416045-02 INFINEON TECHNOLOGIES download Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 4dBm; Bluetooth; SMD; 2Mbps; 2.4GHz
Type of communications module: Bluetooth Low Energy
Transmitter output power: 4dBm
Communictions protocol: Bluetooth
Mounting: SMD
Data transfer rate: 2Mbps
Band: 2.4GHz
Communications modules features: antenna
Operating temperature: -40...85°C
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+12.41 EUR
Mindestbestellmenge: 500
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BAS5202VH6327XTSA1 BAS5202VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFB4FA9C27A469&compId=BAS5202VH6327XTSA1.pdf?ci_sign=f101896bc62890626f8fe38ee88267a1715a2131 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Type of diode: Schottky rectifying
Case: SC79
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Power dissipation: 0.5W
Mounting: SMD
auf Bestellung 4237 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
202+0.35 EUR
232+0.31 EUR
325+0.22 EUR
376+0.19 EUR
625+0.11 EUR
2500+0.1 EUR
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BAS5202VH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BAS52SERIES-DS-v01_01-en.pdf?fileId=db3a30432d9b3066012dbc006764413f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.094 EUR
Mindestbestellmenge: 10000
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AIDK10S65C5ATMA1 INFINEON TECHNOLOGIES Infineon-AIDK10S65C5-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601701ac3e0ec2f4e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 53W
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 33A
Leakage current: 12µA
Power dissipation: 53W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
Produkt ist nicht verfügbar
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IPD50N04S410ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 37500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.38 EUR
Mindestbestellmenge: 2500
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7758B7BEB910B&compId=BSR202NL6327HTSA1.pdf?ci_sign=55845be12c367b8471e90a3bdc2297c96057b3b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2763 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
138+0.52 EUR
183+0.39 EUR
258+0.28 EUR
274+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 105
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BTS134D BTS134D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697B83D3C892469&compId=BTS134D.pdf?ci_sign=279382de0641561c09d83bf152f00a64c4ac44ed Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Output voltage: 42V
Output current: 3.5A
Type of integrated circuit: power switch
auf Bestellung 629 Stücke:
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19+3.93 EUR
28+2.59 EUR
44+1.66 EUR
46+1.57 EUR
Mindestbestellmenge: 19
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BAT68E6327HTSA1 BAT68E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Power dissipation: 0.15W
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
313+0.23 EUR
358+0.2 EUR
424+0.17 EUR
481+0.15 EUR
527+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 264
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IPB019N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
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800+1.99 EUR
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IPD180N10N3GATMA1 INFINEON TECHNOLOGIES IPD180N10N3_G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 43A; 71W; DPAK; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.63 EUR
Mindestbestellmenge: 2500
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.95 EUR
12+6.26 EUR
15+4.8 EUR
16+4.53 EUR
Mindestbestellmenge: 11
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IPP076N15N5AKSA1 IPP076N15N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA73DF079C4143&compId=IPP076N15N5.pdf?ci_sign=189e62cec18bbd565ab1a68ff404f15246b5feab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Drain-source voltage: 150V
Drain current: 79A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
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IPA083N10N5XKSA1 IPA083N10N5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4E2EDEAF411C&compId=IPA083N10N5-DTE.pdf?ci_sign=817546629e601f5d037ddd3655bcce94dee0b121 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
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IPD80R280P7ATMA1 IPD80R280P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD162D9DC4EE259&compId=IPD80R280P7.pdf?ci_sign=122ee47535102d95f43449c799de570791b34eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD80R360P7ATMA1 IPD80R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA526994279E143&compId=IPD80R360P7.pdf?ci_sign=93dc51bb6b44f44ae02c940893f2016f52cce51d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Kind of package: reel; tape
Case: PG-DSO-16
Type of integrated circuit: driver
Technology: EiceDRIVER™; GaN
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8A273A207160D5&compId=FP30R06KE3.pdf?ci_sign=e0571df97a6a78c1c52fa24db5a6537a3a666fe4 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Case: AG-ECONO2C
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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BTS3800SL BTS3800SL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E30B5066C469&compId=BTS3800SL.pdf?ci_sign=cf2798fc7085ad14eef5f0487446413b0d9150bf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 1; N-Channel; SMD; PG-SCT595
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: SMD
Type of integrated circuit: power switch
Operating temperature: -40...150°C
Turn-off time: 3µs
Turn-on time: 3µs
Output current: 0.35A
On-state resistance: 0.8Ω
Number of channels: 1
Case: PG-SCT595
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
62+1.16 EUR
74+0.98 EUR
136+0.53 EUR
144+0.5 EUR
Mindestbestellmenge: 38
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2EDL05I06PFXUMA1 2EDL05I06PFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 600V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10GHIV20 INFINEON TECHNOLOGIES FASLS03740-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10TFI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10TFIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10TFIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10TFV010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV013 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV023 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHVV20 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHVV23 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11FHIV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11FHIV23 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11TFIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11TFIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11TFV023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; TSOP56
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI013 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33ABC275D4143&compId=IPB100N06S2L05.pdf?ci_sign=ed9a21125ac2c67384789464ad8f62978609982b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 170nC
On-state resistance: 4.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Technology: OptiMOS™
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA32C6912322143&compId=IPB100N06S205.pdf?ci_sign=cd8570fdde39d441592cb3a22ab9f2932d43b8c5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 4.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Technology: OptiMOS™
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP052N06L3GXKSA1 IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98E023A9B411C&compId=IPP052N06L3G-DTE.pdf?ci_sign=8a5b95f3a4bf719a2bed0f802edb055a4b86c61e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
45+1.62 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 30
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TLS850B0TBV33ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 500mA; D2PAK-5; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Protection: overheating OTP
Application: automotive industry
Number of channels: 1
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.74 EUR
Mindestbestellmenge: 1000
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R360P7ATMA1 IPB60R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8968175445EF773D6&compId=IPB60R360P7.pdf?ci_sign=40ccf4ce5ead59d45d23717572646c4e08f7e2b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA49397A1FD2143&compId=IPD60R360P7.pdf?ci_sign=9e7e9500ebd8e602db7a1d94b31f61db7e493546 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPD60R360P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 9A; 41W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
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2500+0.4 EUR
Mindestbestellmenge: 2500
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IRF8113TRPBF IRF8113TRPBF INFINEON TECHNOLOGIES irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29GL01GS10DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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S29GL01GS10DHI023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Output voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
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IRFS52N15DTRLP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEEF50A44F5B5EA&compId=IRFS52N15DTRLP.pdf?ci_sign=e6b4ae92e1807fa44abcf6d34c99a50ce0f0c20e
IRFS52N15DTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS52N15DTRRP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF4842F86155EA&compId=IRFS52N15DTRRP.pdf?ci_sign=ebc254e558cc0929f63fa9dc13b00da8547b2f4d
IRFS52N15DTRRP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE5028CXGAD28HAMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TLE5028CXGAD28HAMA1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+4.08 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
CYBLE-416045-02 download
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 4dBm; Bluetooth; SMD; 2Mbps; 2.4GHz
Type of communications module: Bluetooth Low Energy
Transmitter output power: 4dBm
Communictions protocol: Bluetooth
Mounting: SMD
Data transfer rate: 2Mbps
Band: 2.4GHz
Communications modules features: antenna
Operating temperature: -40...85°C
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+12.41 EUR
Mindestbestellmenge: 500
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BAS5202VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFB4FA9C27A469&compId=BAS5202VH6327XTSA1.pdf?ci_sign=f101896bc62890626f8fe38ee88267a1715a2131
BAS5202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 45V; 0.75A; 500mW
Type of diode: Schottky rectifying
Case: SC79
Max. off-state voltage: 45V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Power dissipation: 0.5W
Mounting: SMD
auf Bestellung 4237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
202+0.35 EUR
232+0.31 EUR
325+0.22 EUR
376+0.19 EUR
625+0.11 EUR
2500+0.1 EUR
Mindestbestellmenge: 157
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BAS5202VH6433XTMA1 Infineon-BAS52SERIES-DS-v01_01-en.pdf?fileId=db3a30432d9b3066012dbc006764413f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.094 EUR
Mindestbestellmenge: 10000
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AIDK10S65C5ATMA1 Infineon-AIDK10S65C5-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601701ac3e0ec2f4e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 53W
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 33A
Leakage current: 12µA
Power dissipation: 53W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
Produkt ist nicht verfügbar
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IPD50N04S410ATMA1 Infineon-IPD50N04S4_10-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c862acb5e4b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 37500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
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BSR202NL6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7758B7BEB910B&compId=BSR202NL6327HTSA1.pdf?ci_sign=55845be12c367b8471e90a3bdc2297c96057b3b9
BSR202NL6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2763 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
138+0.52 EUR
183+0.39 EUR
258+0.28 EUR
274+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 105
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BTS134D pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697B83D3C892469&compId=BTS134D.pdf?ci_sign=279382de0641561c09d83bf152f00a64c4ac44ed
BTS134D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Output voltage: 42V
Output current: 3.5A
Type of integrated circuit: power switch
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.59 EUR
44+1.66 EUR
46+1.57 EUR
Mindestbestellmenge: 19
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BAT68E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E053C1DBDA0469&compId=BAT6804E6327HTSA1.pdf?ci_sign=48c3ec698637286826c432ea3d7330d5dff54f64
BAT68E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 8V; 0.13A; 150mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 8V
Load current: 0.13A
Semiconductor structure: single diode
Power dissipation: 0.15W
auf Bestellung 2733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
313+0.23 EUR
358+0.2 EUR
424+0.17 EUR
481+0.15 EUR
527+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 264
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IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 166A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.99 EUR
Mindestbestellmenge: 800
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IPD180N10N3GATMA1 IPD180N10N3_G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 43A; 71W; DPAK; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.63 EUR
Mindestbestellmenge: 2500
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IPP020N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.95 EUR
12+6.26 EUR
15+4.8 EUR
16+4.53 EUR
Mindestbestellmenge: 11
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IPP076N15N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA73DF079C4143&compId=IPP076N15N5.pdf?ci_sign=189e62cec18bbd565ab1a68ff404f15246b5feab
IPP076N15N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Drain-source voltage: 150V
Drain current: 79A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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IPA083N10N5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4E2EDEAF411C&compId=IPA083N10N5-DTE.pdf?ci_sign=817546629e601f5d037ddd3655bcce94dee0b121
IPA083N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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IPD80R280P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD162D9DC4EE259&compId=IPD80R280P7.pdf?ci_sign=122ee47535102d95f43449c799de570791b34eee
IPD80R280P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD80R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA526994279E143&compId=IPD80R360P7.pdf?ci_sign=93dc51bb6b44f44ae02c940893f2016f52cce51d
IPD80R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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1EDS5663HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Kind of package: reel; tape
Case: PG-DSO-16
Type of integrated circuit: driver
Technology: EiceDRIVER™; GaN
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
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FP30R06KE3BPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8A273A207160D5&compId=FP30R06KE3.pdf?ci_sign=e0571df97a6a78c1c52fa24db5a6537a3a666fe4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Case: AG-ECONO2C
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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BTS3800SL pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E30B5066C469&compId=BTS3800SL.pdf?ci_sign=cf2798fc7085ad14eef5f0487446413b0d9150bf
BTS3800SL
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 1; N-Channel; SMD; PG-SCT595
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: SMD
Type of integrated circuit: power switch
Operating temperature: -40...150°C
Turn-off time: 3µs
Turn-on time: 3µs
Output current: 0.35A
On-state resistance: 0.8Ω
Number of channels: 1
Case: PG-SCT595
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
62+1.16 EUR
74+0.98 EUR
136+0.53 EUR
144+0.5 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
2EDL05I06PFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1
2EDL05I06PFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Voltage class: 600V
Mounting: SMD
Case: PG-DSO-8
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10GHIV20 FASLS03740-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV013 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV020 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFV023 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; TSOP56
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHVV20
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11DHVV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11FHIV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11FHIV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11TFIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S11TFV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 110ns; TSOP56
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S90DHI023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 90ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 90ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S2L05ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA33ABC275D4143&compId=IPB100N06S2L05.pdf?ci_sign=ed9a21125ac2c67384789464ad8f62978609982b
IPB100N06S2L05ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 170nC
On-state resistance: 4.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Technology: OptiMOS™
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E3DAAD43E211C&compId=BSZ100N06LS3G-DTE.pdf?ci_sign=4f5c55c03ed9fd06aee860c65e9b034596f8d145
BSZ100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N06S205ATMA4 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA32C6912322143&compId=IPB100N06S205.pdf?ci_sign=cd8570fdde39d441592cb3a22ab9f2932d43b8c5
IPB100N06S205ATMA4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 4.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Technology: OptiMOS™
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP052N06L3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98E023A9B411C&compId=IPP052N06L3G-DTE.pdf?ci_sign=8a5b95f3a4bf719a2bed0f802edb055a4b86c61e
IPP052N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
45+1.62 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 3.3V; 500mA; D2PAK-5; SMD; -40÷150°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Protection: overheating OTP
Application: automotive industry
Number of channels: 1
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.74 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8968175445EF773D6&compId=IPB60R360P7.pdf?ci_sign=40ccf4ce5ead59d45d23717572646c4e08f7e2b7
IPB60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA49397A1FD2143&compId=IPD60R360P7.pdf?ci_sign=9e7e9500ebd8e602db7a1d94b31f61db7e493546
IPD60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
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IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
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IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
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IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 9A; 41W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.4 EUR
Mindestbestellmenge: 2500
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IRF8113TRPBF description irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50
IRF8113TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
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S29GL01GS10DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Output voltage: 2.7...3.6V DC
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S29GL01GS10DHI023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Output voltage: 2.7...3.6V DC
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