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IPA60R099C7XKSA1 IPA60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 IPA60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B2A4227451BF&compId=IPA60R250CP-DTE.pdf?ci_sign=37e3ab36241b6eff66e7b31ab2248f530ab5031a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 IPA60R380E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C323883031BF&compId=IPA60R380E6-DTE.pdf?ci_sign=37cce844c112f280e477554d4c62eaaefb14c002 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380P6XKSA1 IPA60R380P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D2DE7AD711BF&compId=IPA60R380P6-DTE.pdf?ci_sign=06212babaf68dbac9f2a5e438ed79812f939d6c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R450E6XKSA1 IPA60R450E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C807398C51BF&compId=IPA60R450E6-DTE.pdf?ci_sign=407137540a218c7e3bd8b1c04c24ab9be4d9dc2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600E6XKSA1 IPA60R600E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BFE4172591BF&compId=IPA60R600E6-DTE.pdf?ci_sign=36078ae942325a5e3a97081308696883e76f599c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600P6XKSA1 IPA60R600P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CA61294D11BF&compId=IPA60R600P6-DTE.pdf?ci_sign=467ea7210b33aed1d90941a327fb410e16131601 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
Mindestbestellmenge: 200
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IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Electrical mounting: SMT
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.42 EUR
Mindestbestellmenge: 200
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BCX5216H6327XTSA1 INFINEON TECHNOLOGIES bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.17 EUR
Mindestbestellmenge: 1000
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BSC155N06NDATMA1 INFINEON TECHNOLOGIES Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.61 EUR
Mindestbestellmenge: 5000
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CY8C21323-24PVXI INFINEON TECHNOLOGIES Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: 8-bit PIC family
Description: IC: PIC microcontroller; 4.096kB; 24MHz; SMD; SSOP20; -40÷85°C
Type of integrated circuit: PIC microcontroller
Integrated circuit features: PoR; PWM
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Number of 8bit timers: 1
Number of 16bit timers: 1
Number of capacitive channels: 8
Number of inputs/outputs: 16
Program memory: 4.096kB
Clock frequency: 24MHz
auf Bestellung 3300 Stücke:
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66+4.26 EUR
132+3.85 EUR
Mindestbestellmenge: 66
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CY8C21323-24PVXIT INFINEON TECHNOLOGIES download Category: Integrated circuits - Unclassified
Description: CY8C21323-24PVXIT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+3.85 EUR
Mindestbestellmenge: 2000
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8A6A5609611C&compId=IPP600N25N3G-DTE.pdf?ci_sign=eb7b93c1e4c9d590d6856df6ae36f640cede45f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+3 EUR
25+2.87 EUR
26+2.85 EUR
27+2.73 EUR
Mindestbestellmenge: 21
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IPB600N25N3GATMA1 IPB600N25N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC676E823AC11C&compId=BSC600N25NS3G-DTE.pdf?ci_sign=586e61468ef9e8c313700749d2475982e9c3a33e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA600N25NM3SXKSA1 IPA600N25NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BCR166E6327HTSA1 INFINEON TECHNOLOGIES bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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IPA60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b
IPA60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B2A4227451BF&compId=IPA60R250CP-DTE.pdf?ci_sign=37e3ab36241b6eff66e7b31ab2248f530ab5031a
IPA60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C323883031BF&compId=IPA60R380E6-DTE.pdf?ci_sign=37cce844c112f280e477554d4c62eaaefb14c002
IPA60R380E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D2DE7AD711BF&compId=IPA60R380P6-DTE.pdf?ci_sign=06212babaf68dbac9f2a5e438ed79812f939d6c8
IPA60R380P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R450E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C807398C51BF&compId=IPA60R450E6-DTE.pdf?ci_sign=407137540a218c7e3bd8b1c04c24ab9be4d9dc2d
IPA60R450E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BFE4172591BF&compId=IPA60R600E6-DTE.pdf?ci_sign=36078ae942325a5e3a97081308696883e76f599c
IPA60R600E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CA61294D11BF&compId=IPA60R600P6-DTE.pdf?ci_sign=467ea7210b33aed1d90941a327fb410e16131601
IPA60R600P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.43 EUR
Mindestbestellmenge: 200
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IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Electrical mounting: SMT
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.42 EUR
Mindestbestellmenge: 200
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BCX5216H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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BSC155N06NDATMA1 Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
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CY8C21323-24PVXI description Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: 8-bit PIC family
Description: IC: PIC microcontroller; 4.096kB; 24MHz; SMD; SSOP20; -40÷85°C
Type of integrated circuit: PIC microcontroller
Integrated circuit features: PoR; PWM
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Number of 8bit timers: 1
Number of 16bit timers: 1
Number of capacitive channels: 8
Number of inputs/outputs: 16
Program memory: 4.096kB
Clock frequency: 24MHz
auf Bestellung 3300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+4.26 EUR
132+3.85 EUR
Mindestbestellmenge: 66
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CY8C21323-24PVXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C21323-24PVXIT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+3.85 EUR
Mindestbestellmenge: 2000
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IPP600N25N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8A6A5609611C&compId=IPP600N25N3G-DTE.pdf?ci_sign=eb7b93c1e4c9d590d6856df6ae36f640cede45f5
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3 EUR
25+2.87 EUR
26+2.85 EUR
27+2.73 EUR
Mindestbestellmenge: 21
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IPB600N25N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41
IPB600N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC676E823AC11C&compId=BSC600N25NS3G-DTE.pdf?ci_sign=586e61468ef9e8c313700749d2475982e9c3a33e
BSC600N25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA600N25NM3SXKSA1 Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d
IPA600N25NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BCR166E6327HTSA1 bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
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