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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D0410408F1BF&compId=IPA60R330P6-DTE.pdf?ci_sign=8fe26dec6918ab4a64fbe3d08629bc3f7a6abfc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160P6XKSA1 IPA60R160P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CB573E1511BF&compId=IPA60R160P6-DTE.pdf?ci_sign=00d168e35ae5fbfea8f6315fd81963926b971ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R099C7XKSA1 IPA60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 IPA60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B2A4227451BF&compId=IPA60R250CP-DTE.pdf?ci_sign=37e3ab36241b6eff66e7b31ab2248f530ab5031a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Mounting: THT
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 IPA60R380E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C323883031BF&compId=IPA60R380E6-DTE.pdf?ci_sign=37cce844c112f280e477554d4c62eaaefb14c002 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380P6XKSA1 IPA60R380P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D2DE7AD711BF&compId=IPA60R380P6-DTE.pdf?ci_sign=06212babaf68dbac9f2a5e438ed79812f939d6c8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R450E6XKSA1 IPA60R450E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C807398C51BF&compId=IPA60R450E6-DTE.pdf?ci_sign=407137540a218c7e3bd8b1c04c24ab9be4d9dc2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600E6XKSA1 IPA60R600E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BFE4172591BF&compId=IPA60R600E6-DTE.pdf?ci_sign=36078ae942325a5e3a97081308696883e76f599c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600P6XKSA1 IPA60R600P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CA61294D11BF&compId=IPA60R600P6-DTE.pdf?ci_sign=467ea7210b33aed1d90941a327fb410e16131601 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
Mindestbestellmenge: 200
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IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Electrical mounting: SMT
auf Bestellung 454 Stücke:
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200+0.42 EUR
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BCX5216H6327XTSA1 INFINEON TECHNOLOGIES bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 4000 Stücke:
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1000+0.17 EUR
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BSC155N06NDATMA1 INFINEON TECHNOLOGIES Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
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5000+0.61 EUR
Mindestbestellmenge: 5000
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CY8C21323-24PVXI INFINEON TECHNOLOGIES Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: 8-bit PIC family
Description: IC: PIC microcontroller; 4.096kB; 24MHz; SMD; SSOP20; -40÷85°C
Case: SSOP20
Mounting: SMD
Type of integrated circuit: PIC microcontroller
Integrated circuit features: PoR; PWM
Operating temperature: -40...85°C
Number of 16bit timers: 1
Number of 8bit timers: 1
Number of capacitive channels: 8
Number of inputs/outputs: 16
Program memory: 4.096kB
Clock frequency: 24MHz
auf Bestellung 3300 Stücke:
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66+4.29 EUR
132+3.86 EUR
Mindestbestellmenge: 66
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CY8C21323-24PVXIT INFINEON TECHNOLOGIES download Category: Integrated circuits - Unclassified
Description: CY8C21323-24PVXIT
auf Bestellung 4000 Stücke:
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2000+3.86 EUR
Mindestbestellmenge: 2000
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IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8A6A5609611C&compId=IPP600N25N3G-DTE.pdf?ci_sign=eb7b93c1e4c9d590d6856df6ae36f640cede45f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+3 EUR
25+2.87 EUR
26+2.85 EUR
27+2.73 EUR
Mindestbestellmenge: 21
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IPB600N25N3GATMA1 IPB600N25N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC676E823AC11C&compId=BSC600N25NS3G-DTE.pdf?ci_sign=586e61468ef9e8c313700749d2475982e9c3a33e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA600N25NM3SXKSA1 IPA600N25NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BCR166E6327HTSA1 INFINEON TECHNOLOGIES bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Kind of integrated circuit: gate driver; high-/low-side
auf Bestellung 30 Stücke:
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8+8.94 EUR
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BCX5516H6327XTSA1 INFINEON TECHNOLOGIES bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; SOT89; automotive industry
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Collector current: 1A
Collector-emitter voltage: 60V
Application: automotive industry
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 4000 Stücke:
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1000+0.18 EUR
Mindestbestellmenge: 1000
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BAR6402ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa Category: Unclassified
Description: BAR6402ELE6327XTMA1
auf Bestellung 15000 Stücke:
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15000+0.086 EUR
Mindestbestellmenge: 15000
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PVG612SPBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.74 EUR
Mindestbestellmenge: 50
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PVA1354NPBF INFINEON TECHNOLOGIES pva13n.pdf?fileId=5546d462533600a401535683928a291e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 375mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 740 Stücke:
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50+8.37 EUR
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SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD02N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 2A; 42W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12nC
Electrical mounting: SMT
auf Bestellung 20000 Stücke:
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2500+0.62 EUR
Mindestbestellmenge: 2500
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CY62128ELL-45SXA INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62128ELL-45SXAT INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62128ELL-55SXE INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62128ELL-55SXET INFINEON TECHNOLOGIES Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62138FLL-45SXI INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62138FLL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62148EV30LL-55SXI INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 55ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62148G30-45SXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62128EV30LL-45SXIT INFINEON TECHNOLOGIES Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C301A0AA3A611C&compId=BSC052N08NS5-DTE.pdf?ci_sign=79e01560211bef173b7b8e173045d7dfe6e4168d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Drain current: 95A
Drain-source voltage: 80V
Power dissipation: 83W
Produkt ist nicht verfügbar
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Output current: -1...1A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Topology: single transistor
Number of channels: 1
Supply voltage: 3.1...17V; 13...18V
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
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DDB6U134N16RRBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CCBF8C6A8760D5&compId=DDB6U134N16RR.pdf?ci_sign=f7b900497d4ef2c558d9e3673b4732e883c1cdfa Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 70A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CCB1FCDB4C20D5&compId=DDB6U104N16RR.pdf?ci_sign=0c33e231e0bb5270eb5c52b996ce7e08c74ae4a8 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRF7607TRPBF IRF7607TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A7E4395B88F1A303005056AB0C4F&compId=irf7607pbf.pdf?ci_sign=df1f9251b24cacd7a6a4255ddad2d2f9ec10fde1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7601TRPBF IRF7601TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A77B13BA4BF1A303005056AB0C4F&compId=irf7601pbf.pdf?ci_sign=b64038af7d5f7c3646022a69072534bd2f6da07a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.7A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPDD60R050G7XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD11E7210458BF&compId=IPDD60R050G7.pdf?ci_sign=9a79a6b67256c083d458464cd4f127f2a7a6917a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Mounting: SMD
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 68nC
On-state resistance: 50mΩ
Drain current: 47A
Gate-source voltage: ±20V
Pulsed drain current: 135A
Power dissipation: 278W
Drain-source voltage: 600V
Polarisation: unipolar
Case: PG-HDSOP-10-1
Produkt ist nicht verfügbar
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.9 EUR
Mindestbestellmenge: 1000
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IPB068N20NM6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF1EDDD4CED60DF&compId=IPB068N20NM6ATMA1.pdf?ci_sign=c5c2d43dc60740532496c8f4ae36adfa957dce47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 134A; Idm: 536A
Mounting: SMD
Technology: OptiMOS™ 6
Kind of package: reel
Polarisation: unipolar
Gate charge: 73nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 134A
Pulsed drain current: 536A
Drain-source voltage: 200V
Power dissipation: 300W
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRS2008STRPBF INFINEON TECHNOLOGIES Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+0.62 EUR
Mindestbestellmenge: 2500
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IPD096N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 73A; 100W; DPAK,TO252; SMT
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
On-state resistance: 7.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
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BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871A373A03E11C&compId=BSC070N10NS3G-dte.pdf?ci_sign=5c8c232415a157613259f38f01c15cb9959274fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC072N08NS5ATMA1 BSC072N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38722EF2F23A11C&compId=BSC072N08NS5-DTE.pdf?ci_sign=c26e399b4328c18b246b5e82a3b4ee2831baf95e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC072N04LDATMA1 INFINEON TECHNOLOGIES Infineon-BSC072N04LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905d7c0180c4d Category: Unclassified
Description: BSC072N04LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.82 EUR
Mindestbestellmenge: 5000
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BSC074N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC074N15NS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f8032bc9a7092 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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5000+2.75 EUR
Mindestbestellmenge: 5000
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BSC076N04NDATMA1 INFINEON TECHNOLOGIES Infineon-BSC076N04ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc2e050ce9 Category: Unclassified
Description: BSC076N04NDATMA1
auf Bestellung 10000 Stücke:
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5000+0.69 EUR
Mindestbestellmenge: 5000
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BSC079N10NSGATMA1 INFINEON TECHNOLOGIES BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 13.4A; 156W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.43 EUR
Mindestbestellmenge: 5000
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IRFR3709ZTRPBF IRFR3709ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD03F9598C55EA&compId=IRFR3709ZTRPBF.pdf?ci_sign=81100efa9686ec246f64dec8abf1c711090f7610 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRRPBF IRFR3709ZTRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C3E9C2773DF1A303005056AB0C4F&compId=irfr3709zpbf.pdf?ci_sign=64d82bd91e26be1182992fc1edd4c49fe3fb408a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C21323-24LQXIT INFINEON TECHNOLOGIES Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Integrated circuits - Unclassified
Description: CY8C21323-24LQXIT
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2500+4.33 EUR
Mindestbestellmenge: 2500
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BAT6404E6433HTMA1 INFINEON TECHNOLOGIES INFNS11551-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 250mA; 5ns
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Capacitance: 6pF
Application: automotive industry
Leakage current: 2µA
Max. load current: 0.25A
Max. forward voltage: 0.75V
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.063 EUR
Mindestbestellmenge: 10000
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IPB020N04NGATMA1 IPB020N04NGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D4B3FFC6811C&compId=IPB020N04NG-DTE.pdf?ci_sign=64a12bcd61572fea0991d6044b6ce94671247ea2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Drain-source voltage: 40V
Drain current: 140A
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 167W
Produkt ist nicht verfügbar
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DZ600N18K DZ600N18K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9CE3FC8D72469&compId=DZ600N18K.pdf?ci_sign=2fd24aaa0657958caf6547fe0085077ad61de6e6 Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D0410408F1BF&compId=IPA60R330P6-DTE.pdf?ci_sign=8fe26dec6918ab4a64fbe3d08629bc3f7a6abfc2
IPA60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CB573E1511BF&compId=IPA60R160P6-DTE.pdf?ci_sign=00d168e35ae5fbfea8f6315fd81963926b971ae3
IPA60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b
IPA60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B2A4227451BF&compId=IPA60R250CP-DTE.pdf?ci_sign=37e3ab36241b6eff66e7b31ab2248f530ab5031a
IPA60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Mounting: THT
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C323883031BF&compId=IPA60R380E6-DTE.pdf?ci_sign=37cce844c112f280e477554d4c62eaaefb14c002
IPA60R380E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D2DE7AD711BF&compId=IPA60R380P6-DTE.pdf?ci_sign=06212babaf68dbac9f2a5e438ed79812f939d6c8
IPA60R380P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R450E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C807398C51BF&compId=IPA60R450E6-DTE.pdf?ci_sign=407137540a218c7e3bd8b1c04c24ab9be4d9dc2d
IPA60R450E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BFE4172591BF&compId=IPA60R600E6-DTE.pdf?ci_sign=36078ae942325a5e3a97081308696883e76f599c
IPA60R600E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CA61294D11BF&compId=IPA60R600P6-DTE.pdf?ci_sign=467ea7210b33aed1d90941a327fb410e16131601
IPA60R600P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.43 EUR
Mindestbestellmenge: 200
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IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Electrical mounting: SMT
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.42 EUR
Mindestbestellmenge: 200
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BCX5216H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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BSC155N06NDATMA1 Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC155N06NDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
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CY8C21323-24PVXI description Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: 8-bit PIC family
Description: IC: PIC microcontroller; 4.096kB; 24MHz; SMD; SSOP20; -40÷85°C
Case: SSOP20
Mounting: SMD
Type of integrated circuit: PIC microcontroller
Integrated circuit features: PoR; PWM
Operating temperature: -40...85°C
Number of 16bit timers: 1
Number of 8bit timers: 1
Number of capacitive channels: 8
Number of inputs/outputs: 16
Program memory: 4.096kB
Clock frequency: 24MHz
auf Bestellung 3300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+4.29 EUR
132+3.86 EUR
Mindestbestellmenge: 66
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CY8C21323-24PVXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C21323-24PVXIT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+3.86 EUR
Mindestbestellmenge: 2000
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IPP600N25N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8A6A5609611C&compId=IPP600N25N3G-DTE.pdf?ci_sign=eb7b93c1e4c9d590d6856df6ae36f640cede45f5
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3 EUR
25+2.87 EUR
26+2.85 EUR
27+2.73 EUR
Mindestbestellmenge: 21
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IPB600N25N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41
IPB600N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC600N25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC676E823AC11C&compId=BSC600N25NS3G-DTE.pdf?ci_sign=586e61468ef9e8c313700749d2475982e9c3a33e
BSC600N25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA600N25NM3SXKSA1 Infineon-IPA600N25NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d19624b6e3d
IPA600N25NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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IPD600N25N3GATMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 18A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BCR166E6327HTSA1 bcr166series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114402db36002d0
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
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IR2114SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Topology: IGBT half-bridge
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Kind of integrated circuit: gate driver; high-/low-side
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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BCX5516H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; SOT89; automotive industry
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Collector current: 1A
Collector-emitter voltage: 60V
Application: automotive industry
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.18 EUR
Mindestbestellmenge: 1000
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BAR6402ELE6327XTMA1 Infineon-BAR64-02EL-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f023e4d38fa
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BAR6402ELE6327XTMA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.086 EUR
Mindestbestellmenge: 15000
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PVG612SPBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.74 EUR
Mindestbestellmenge: 50
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PVA1354NPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 375mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.37 EUR
Mindestbestellmenge: 50
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SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD02N80C3ATMA1 Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 2A; 42W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12nC
Electrical mounting: SMT
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.62 EUR
Mindestbestellmenge: 2500
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CY62128ELL-45SXA Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62128ELL-45SXAT Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62128ELL-55SXE Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62128ELL-55SXET Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 55ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62138FLL-45SXI Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62138FLL-45SXIT Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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CY62148EV30LL-55SXI Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 55ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62148G30-45SXIT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 45ns; SO32; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 45ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC052N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C301A0AA3A611C&compId=BSC052N08NS5-DTE.pdf?ci_sign=79e01560211bef173b7b8e173045d7dfe6e4168d
BSC052N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Drain current: 95A
Drain-source voltage: 80V
Power dissipation: 83W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDC10I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC10I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Output current: -1...1A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Topology: single transistor
Number of channels: 1
Supply voltage: 3.1...17V; 13...18V
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U134N16RRBPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CCBF8C6A8760D5&compId=DDB6U134N16RR.pdf?ci_sign=f7b900497d4ef2c558d9e3673b4732e883c1cdfa
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 70A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DDB6U104N16RRBPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CCB1FCDB4C20D5&compId=DDB6U104N16RR.pdf?ci_sign=0c33e231e0bb5270eb5c52b996ce7e08c74ae4a8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-ECONO2B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: EconoBRIDGE™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRF7607TRPBF pVersion=0046&contRep=ZT&docId=E221A7E4395B88F1A303005056AB0C4F&compId=irf7607pbf.pdf?ci_sign=df1f9251b24cacd7a6a4255ddad2d2f9ec10fde1
IRF7607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7601TRPBF pVersion=0046&contRep=ZT&docId=E221A77B13BA4BF1A303005056AB0C4F&compId=irf7601pbf.pdf?ci_sign=b64038af7d5f7c3646022a69072534bd2f6da07a
IRF7601TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.7A
Power dissipation: 1.8W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPDD60R050G7XTMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD11E7210458BF&compId=IPDD60R050G7.pdf?ci_sign=9a79a6b67256c083d458464cd4f127f2a7a6917a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Mounting: SMD
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 68nC
On-state resistance: 50mΩ
Drain current: 47A
Gate-source voltage: ±20V
Pulsed drain current: 135A
Power dissipation: 278W
Drain-source voltage: 600V
Polarisation: unipolar
Case: PG-HDSOP-10-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.9 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB068N20NM6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF1EDDD4CED60DF&compId=IPB068N20NM6ATMA1.pdf?ci_sign=c5c2d43dc60740532496c8f4ae36adfa957dce47
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 134A; Idm: 536A
Mounting: SMD
Technology: OptiMOS™ 6
Kind of package: reel
Polarisation: unipolar
Gate charge: 73nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 134A
Pulsed drain current: 536A
Drain-source voltage: 200V
Power dissipation: 300W
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2008STRPBF Infineon-IRS2008%28S%2CM%29-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3&redirId=115112
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.62 EUR
Mindestbestellmenge: 2500
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IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 73A; 100W; DPAK,TO252; SMT
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
On-state resistance: 7.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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BSC070N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3871A373A03E11C&compId=BSC070N10NS3G-dte.pdf?ci_sign=5c8c232415a157613259f38f01c15cb9959274fa
BSC070N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC072N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38722EF2F23A11C&compId=BSC072N08NS5-DTE.pdf?ci_sign=c26e399b4328c18b246b5e82a3b4ee2831baf95e
BSC072N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC072N04LDATMA1 Infineon-BSC072N04LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905d7c0180c4d
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BSC072N04LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.82 EUR
Mindestbestellmenge: 5000
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BSC074N15NS5ATMA1 Infineon-BSC074N15NS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f8032bc9a7092
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.75 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC076N04NDATMA1 Infineon-BSC076N04ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc2e050ce9
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BSC076N04NDATMA1
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.69 EUR
Mindestbestellmenge: 5000
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BSC079N10NSGATMA1 BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 13.4A; 156W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 13.4A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.43 EUR
Mindestbestellmenge: 5000
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IRFR3709ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD03F9598C55EA&compId=IRFR3709ZTRPBF.pdf?ci_sign=81100efa9686ec246f64dec8abf1c711090f7610
IRFR3709ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3709ZTRRPBF pVersion=0046&contRep=ZT&docId=E221C3E9C2773DF1A303005056AB0C4F&compId=irfr3709zpbf.pdf?ci_sign=64d82bd91e26be1182992fc1edd4c49fe3fb408a
IRFR3709ZTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY8C21323-24LQXIT Infineon-CY8C21123_CY8C21223_CY8C21323_PSoC_Programmable_System-on-Chip-DataSheet-v30_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec69ee13cf9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C21323-24LQXIT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+4.33 EUR
Mindestbestellmenge: 2500
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BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 250mA; 5ns
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Capacitance: 6pF
Application: automotive industry
Leakage current: 2µA
Max. load current: 0.25A
Max. forward voltage: 0.75V
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.063 EUR
Mindestbestellmenge: 10000
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IPB020N04NGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D4B3FFC6811C&compId=IPB020N04NG-DTE.pdf?ci_sign=64a12bcd61572fea0991d6044b6ce94671247ea2
IPB020N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Drain-source voltage: 40V
Drain current: 140A
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 167W
Produkt ist nicht verfügbar
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DZ600N18K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9CE3FC8D72469&compId=DZ600N18K.pdf?ci_sign=2fd24aaa0657958caf6547fe0085077ad61de6e6
DZ600N18K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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