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IPB055N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc1a741b1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1 EUR
Mindestbestellmenge: 800
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IPP055N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1100 Stücke:
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100+1.24 EUR
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BCR22PNH6327XTSA1 INFINEON TECHNOLOGIES bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 50
Mounting: SMD
Frequency: 130MHz
Semiconductor structure: double
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
auf Bestellung 48000 Stücke:
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3000+0.087 EUR
Mindestbestellmenge: 3000
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CYBLE-212006-01 INFINEON TECHNOLOGIES Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 7.5dBm; Bluetooth; SMD; 1Mbps
Type of communications module: Bluetooth Low Energy
Transmitter output power: 7.5dBm
Communictions protocol: Bluetooth
Mounting: SMD
Data transfer rate: 1Mbps
Communications modules features: antenna
Operating temperature: -40...85°C
Receiver sensitivity: -93dBm
auf Bestellung 2000 Stücke:
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500+8.59 EUR
Mindestbestellmenge: 500
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
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PVI5013RS-TPBF PVI5013RS-TPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7BF2C95F37F874A&compId=PVI5013RS-TPBF.pdf?ci_sign=4bcaba8201e56d7d18c9fcb6c68a807317286925 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
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GS-EVB-HB-0650603B-HD INFINEON TECHNOLOGIES Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+302.23 EUR
2+272.01 EUR
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TC299TX128F300SBCKXUMA1 INFINEON TECHNOLOGIES Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Category: Integrated circuits - Unclassified
Description: TC299TX128F300SBCKXUMA1
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
500+81.92 EUR
Mindestbestellmenge: 500
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IPA60R400CEXKSA1 IPA60R400CEXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
46+1.57 EUR
49+1.47 EUR
Mindestbestellmenge: 41
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IPD60R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
Power dissipation: 118W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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IPS65R400CEAKMA1 IPS65R400CEAKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB13753C9BC143&compId=IPS65R400CE.pdf?ci_sign=89d41fbcb329af3efc09b72506724097e03e3ec8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R400CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.97 EUR
Mindestbestellmenge: 100
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IRF200B211 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFC2A5422480D5&compId=IRF200B211.pdf?ci_sign=168dede544fa82a2b1cc94bdb78d3594d2cbb503 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 23nC
On-state resistance: 0.17Ω
Drain current: 9A
Gate-source voltage: ±20V
Pulsed drain current: 34A
Drain-source voltage: 200V
Power dissipation: 80W
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF60B217 INFINEON TECHNOLOGIES irf60b217.pdf?fileId=5546d462533600a4015355e42b3719c8 irf60b217 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 60A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: N
Type of transistor: N-MOSFET
Gate charge: 44nC
On-state resistance: 7.3mΩ
Drain current: 60A
Gate-source voltage: 20V
Drain-source voltage: 60V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.93 EUR
Mindestbestellmenge: 100
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SGP15N120XKSA1 INFINEON TECHNOLOGIES SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.8 EUR
150+4.32 EUR
Mindestbestellmenge: 50
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BC857CE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 110000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.044 EUR
Mindestbestellmenge: 10000
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BC857CWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.051 EUR
Mindestbestellmenge: 3000
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FF900R12IE4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B6DACF73A3B091BF&compId=FF900R12IE4-dte.pdf?ci_sign=b69e55b873654158aa2e23817f95c03452131c3f Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-PRIME2-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Power dissipation: 5.1kW
Technology: PrimePACK™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY7C1471BV25-133AXI INFINEON TECHNOLOGIES ?docID=49452 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA71791143A11C&compId=IPB015N08N5-DTE.pdf?ci_sign=3b3d54fa795afd84f282f91371f0c9b7e9caecb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 155 Stücke:
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30+6.82 EUR
90+6.55 EUR
Mindestbestellmenge: 30
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IPD380P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 35A; 125W; DPAK,TO252
Gate charge: 63nC
On-state resistance: 38mΩ
Gate-source voltage: 20V
Drain current: 35A
Drain-source voltage: 60V
Power dissipation: 125W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.99 EUR
Mindestbestellmenge: 2500
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BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS25411STRPBF IRS25411STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Output current: -700...500mA
Turn-off time: 180ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Voltage class: 600V
Topology: buck
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Type of diode: TVS
Case: TSSLP-2-4
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 20nA
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Version: ESD
auf Bestellung 8267 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
358+0.2 EUR
400+0.18 EUR
463+0.15 EUR
550+0.13 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 278
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ESD101B102ELE6327XTMA1 INFINEON TECHNOLOGIES ESD101_B1_02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.13 EUR
Mindestbestellmenge: 15000
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IPP77N06S212AKSA2 IPP77N06S212AKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBABF36974B8143&compId=IPP77N06S212.pdf?ci_sign=24ff1ea1f6377a34087862481ddde2c624bbbf64 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Kind of package: reel
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 1.95mΩ
Drain current: 156A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 195W
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPL65R165CFDAUMA1 IPL65R165CFDAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91904138191BF&compId=IPL65R165CFD-DTE.pdf?ci_sign=901d28ab02ff3f6e0f1edb6b3fcc7b5ae2b6d7b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Polarisation: unipolar
On-state resistance: 0.165Ω
Drain current: 21.3A
Gate-source voltage: ±20V
Drain-source voltage: 650V
Power dissipation: 195W
Technology: CoolMOS™
Case: PG-VSON-4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFS7537TRLPBF INFINEON TECHNOLOGIES irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PVA3324NPBF INFINEON TECHNOLOGIES IRSDS10619-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Operating temperature: -40...85°C
Manufacturer series: PVA
Case: DIP8
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Body dimensions: 9.4x6.5x4.6mm
Control current max.: 25mA
Max. operating current: 150mA
Control voltage: 1.2V DC
Insulation voltage: 4kV
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.08 EUR
Mindestbestellmenge: 50
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BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD038N06N3GATMA1 IPD038N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP037N06L3GXKSA1 IPP037N06L3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98B88B47F411C&compId=IPP037N06L3G-DTE.pdf?ci_sign=b110c2d2a4ed5ede043f86c78f45386b425e4307 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD048N06L3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; 115W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 115W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.59 EUR
Mindestbestellmenge: 2500
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BTS443P BTS443P INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F78AF1A6F5005056AB5A8F&compId=BTS443P_DS_v10.pdf?ci_sign=0db5963a0c6bf5177e49dfb2e922acd92c0ac2f3 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.7 EUR
Mindestbestellmenge: 2500
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Case: SOT23
Semiconductor structure: double series
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
374+0.19 EUR
407+0.18 EUR
470+0.15 EUR
532+0.13 EUR
606+0.12 EUR
1029+0.069 EUR
1090+0.066 EUR
Mindestbestellmenge: 313
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IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6A3F1A6F5005056AB5A8F&compId=irfs3004pbf.pdf?ci_sign=a529c6af990cdf3405d34e5db519c1ceb8d80a66 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R017C7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 109A; 446W; TO247; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
30+19.29 EUR
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CY8C4248LTI-L485 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
260+12.73 EUR
Mindestbestellmenge: 260
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BSF030NE2LQXUMA1 BSF030NE2LQXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DD43E8B0B611C&compId=BSF030NE2LQ-DTE.pdf?ci_sign=83d617e18df81d97996f9a89515ba09e8545e192 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Power dissipation: 28W
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Produkt ist nicht verfügbar
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1ED020I12B2XUMA1 INFINEON TECHNOLOGIES Infineon-1ED020I12_B2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344bf16f84ca6 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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TLE9850QXXUMA1 INFINEON TECHNOLOGIES Infineon-TLE9850QX-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c71b5849738ba Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48
Type of integrated circuit: driver
Case: VQFN48
Mounting: SMD
Kind of integrated circuit: motor controller
Produkt ist nicht verfügbar
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FF200R12KS4HOSA1 INFINEON TECHNOLOGIES FF200R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 INFINEON TECHNOLOGIES FF400R12KE3.pdf Category: IGBT modules
Description: FF400R12KE3HOSA1
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
10+256.96 EUR
Mindestbestellmenge: 10
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FZ900R12KP4HOSA1 INFINEON TECHNOLOGIES Infineon-FZ900R12KP4-DS-v03_00-EN.pdf?fileId=db3a30431f848401011fb7be4fe55944 Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+198.98 EUR
Mindestbestellmenge: 10
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STT3300N16P76XPSA1 INFINEON TECHNOLOGIES Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Case: BG-PS55-1
Semiconductor structure: opposing
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Produkt ist nicht verfügbar
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STT3300N18P76XPSA1 INFINEON TECHNOLOGIES Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 3.3kA; BG-PS55-1; screw; screw
Case: BG-PS55-1
Semiconductor structure: opposing
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Max. off-state voltage: 1.8kV
Load current: 3.3kA
Produkt ist nicht verfügbar
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IPA60R230P6XKSA1 IPA60R230P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CD74818F51BF&compId=IPA60R230P6-DTE.pdf?ci_sign=4eded1c8a7f006aee967ee72659e80ba3017b516 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.26 EUR
36+2.02 EUR
38+1.92 EUR
250+1.87 EUR
Mindestbestellmenge: 22
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IPA60R099P7 IPA60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1AD96D8E00749&compId=IPA60R099P7.pdf?ci_sign=7eff8bdfbd3710d012680df6a59449a03e6ea114 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R165CPXKSA1 IPA60R165CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B53FF943B1BF&compId=IPA60R165CP-DTE.pdf?ci_sign=985e81116c0f64db57f9bfbef183714745f5854e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R120C7XKSA1 IPA60R120C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80FB45DB9AA0C7&compId=IPA60R120C7.pdf?ci_sign=3083aa4cc297038ef65fd768dad53daafdfb3e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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IPA60R170CFD7XKSA1 IPA60R170CFD7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD81071412BAE0C7&compId=IPA60R170CFD7.pdf?ci_sign=472c564ec0979ccb100660718b6ed72e21d10351 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Pulsed drain current: 51A
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D0410408F1BF&compId=IPA60R330P6-DTE.pdf?ci_sign=8fe26dec6918ab4a64fbe3d08629bc3f7a6abfc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160P6XKSA1 IPA60R160P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CB573E1511BF&compId=IPA60R160P6-DTE.pdf?ci_sign=00d168e35ae5fbfea8f6315fd81963926b971ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R099C7XKSA1 IPA60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 IPA60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B2A4227451BF&compId=IPA60R250CP-DTE.pdf?ci_sign=37e3ab36241b6eff66e7b31ab2248f530ab5031a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 IPA60R380E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C323883031BF&compId=IPA60R380E6-DTE.pdf?ci_sign=37cce844c112f280e477554d4c62eaaefb14c002 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB055N08NF2SATMA1 Infineon-IPB055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc1a741b1e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1 EUR
Mindestbestellmenge: 800
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IPP055N08NF2SAKMA1 Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 99A; 107W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 80V
Drain current: 99A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.24 EUR
Mindestbestellmenge: 100
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BCR22PNH6327XTSA1 bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 50
Mounting: SMD
Frequency: 130MHz
Semiconductor structure: double
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.087 EUR
Mindestbestellmenge: 3000
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CYBLE-212006-01 Infineon-CYBLE-212006-01_CYBLE-202007-01_CYBLE-202013-11_EZ-BLE_Creator_XR_Module-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee303b069f4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: IoT (WiFi/Bluetooth) modules
Description: Module: Bluetooth Low Energy; 7.5dBm; Bluetooth; SMD; 1Mbps
Type of communications module: Bluetooth Low Energy
Transmitter output power: 7.5dBm
Communictions protocol: Bluetooth
Mounting: SMD
Data transfer rate: 1Mbps
Communications modules features: antenna
Operating temperature: -40...85°C
Receiver sensitivity: -93dBm
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+8.59 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
PVI5013RSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82
PVI5013RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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PVI5013RS-TPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A7BF2C95F37F874A&compId=PVI5013RS-TPBF.pdf?ci_sign=4bcaba8201e56d7d18c9fcb6c68a807317286925
PVI5013RS-TPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
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GS-EVB-HB-0650603B-HD
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: GS-EVB-HB-0650603B-HD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+302.23 EUR
2+272.01 EUR
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TC299TX128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TC299TX128F300SBCKXUMA1
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+81.92 EUR
Mindestbestellmenge: 500
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IPA60R400CEXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D5CFAA7B11BF&compId=IPA60R400CE-DTE.pdf?ci_sign=e5e1233d9c0593ec69716be1ffa0f326d68ab466
IPA60R400CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
46+1.57 EUR
49+1.47 EUR
Mindestbestellmenge: 41
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IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
Power dissipation: 118W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS65R400CEAKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB13753C9BC143&compId=IPS65R400CE.pdf?ci_sign=89d41fbcb329af3efc09b72506724097e03e3ec8
IPS65R400CEAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; 118W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 118W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.97 EUR
Mindestbestellmenge: 100
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IRF200B211 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFC2A5422480D5&compId=IRF200B211.pdf?ci_sign=168dede544fa82a2b1cc94bdb78d3594d2cbb503
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 23nC
On-state resistance: 0.17Ω
Drain current: 9A
Gate-source voltage: ±20V
Pulsed drain current: 34A
Drain-source voltage: 200V
Power dissipation: 80W
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF60B217 irf60b217.pdf?fileId=5546d462533600a4015355e42b3719c8 irf60b217
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 60A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Polarisation: N
Type of transistor: N-MOSFET
Gate charge: 44nC
On-state resistance: 7.3mΩ
Drain current: 60A
Gate-source voltage: 20V
Drain-source voltage: 60V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.93 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
SGP15N120XKSA1 SGP_W15N120_Rev2_5[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bc8dd001353b
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+4.8 EUR
150+4.32 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BC857CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 110000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.044 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
BC857CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.051 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FF900R12IE4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B6DACF73A3B091BF&compId=FF900R12IE4-dte.pdf?ci_sign=b69e55b873654158aa2e23817f95c03452131c3f
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-PRIME2-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Power dissipation: 5.1kW
Technology: PrimePACK™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1471BV25-133AXI ?docID=49452
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPB015N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA71791143A11C&compId=IPB015N08N5-DTE.pdf?ci_sign=3b3d54fa795afd84f282f91371f0c9b7e9caecb8
IPB015N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.82 EUR
90+6.55 EUR
Mindestbestellmenge: 30
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IPD380P06NMATMA1 Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 35A; 125W; DPAK,TO252
Gate charge: 63nC
On-state resistance: 38mΩ
Gate-source voltage: 20V
Drain current: 35A
Drain-source voltage: 60V
Power dissipation: 125W
Case: DPAK; TO252
Kind of channel: enhancement
Technology: MOSFET
Polarisation: P
Type of transistor: P-MOSFET
Mounting: SMD
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NS pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E2FB308FA11C&compId=BSC039N06NS-DTE.pdf?ci_sign=e8ff53d8e981086458ea46f47acf12b3c94b9cae
BSC039N06NS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS25411STRPBF pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a
IRS25411STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; SO8; -700÷500mA; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Output current: -700...500mA
Turn-off time: 180ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Voltage class: 600V
Topology: buck
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD101B102ELSE6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402
ESD101B102ELSE6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Type of diode: TVS
Case: TSSLP-2-4
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 20nA
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Version: ESD
auf Bestellung 8267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
358+0.2 EUR
400+0.18 EUR
463+0.15 EUR
550+0.13 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 278
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ESD101B102ELE6327XTMA1 ESD101_B1_02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.13 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
IPP77N06S212AKSA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBABF36974B8143&compId=IPP77N06S212.pdf?ci_sign=24ff1ea1f6377a34087862481ddde2c624bbbf64
IPP77N06S212AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 158W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 158W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLS3813TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b
IRLS3813TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Kind of package: reel
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 1.95mΩ
Drain current: 156A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 195W
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPL65R165CFDAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91904138191BF&compId=IPL65R165CFD-DTE.pdf?ci_sign=901d28ab02ff3f6e0f1edb6b3fcc7b5ae2b6d7b4
IPL65R165CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Polarisation: unipolar
On-state resistance: 0.165Ω
Drain current: 21.3A
Gate-source voltage: ±20V
Drain-source voltage: 650V
Power dissipation: 195W
Technology: CoolMOS™
Case: PG-VSON-4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFS7537TRLPBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PVA3324NPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PVA
Operating temperature: -40...85°C
Manufacturer series: PVA
Case: DIP8
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Body dimensions: 9.4x6.5x4.6mm
Control current max.: 25mA
Max. operating current: 150mA
Control voltage: 1.2V DC
Insulation voltage: 4kV
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.08 EUR
Mindestbestellmenge: 50
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BSB028N06NN3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C21169B999611C&compId=BSB028N06NN3G-DTE.pdf?ci_sign=9f74ee56527681bf6720ac86acff4685671d1a87
BSB028N06NN3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD038N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699276DED30A11C&compId=IPD038N06N3G-DTE.pdf?ci_sign=bd1362c96028dc62407e059fda18143201d9fbe8
IPD038N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP037N06L3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E98B88B47F411C&compId=IPP037N06L3G-DTE.pdf?ci_sign=b110c2d2a4ed5ede043f86c78f45386b425e4307
IPP037N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD048N06L3GATMA1 Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; 115W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 115W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.59 EUR
Mindestbestellmenge: 2500
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BTS443P description pVersion=0046&contRep=ZT&docId=E1C0475774F78AF1A6F5005056AB5A8F&compId=BTS443P_DS_v10.pdf?ci_sign=0db5963a0c6bf5177e49dfb2e922acd92c0ac2f3
BTS443P
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.7 EUR
Mindestbestellmenge: 2500
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BAT5404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Mounting: SMD
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Case: SOT23
Semiconductor structure: double series
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
374+0.19 EUR
407+0.18 EUR
470+0.15 EUR
532+0.13 EUR
606+0.12 EUR
1029+0.069 EUR
1090+0.066 EUR
Mindestbestellmenge: 313
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IRFB3004PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6A3F1A6F5005056AB5A8F&compId=irfs3004pbf.pdf?ci_sign=a529c6af990cdf3405d34e5db519c1ceb8d80a66
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 109A; 446W; TO247; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 109A
Power dissipation: 446W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+19.29 EUR
Mindestbestellmenge: 30
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CY8C4248LTI-L485 Infineon-PSoC_4_PSoC_4200L_Family-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed894aa5a14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+12.73 EUR
Mindestbestellmenge: 260
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BSF030NE2LQXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DD43E8B0B611C&compId=BSF030NE2LQ-DTE.pdf?ci_sign=83d617e18df81d97996f9a89515ba09e8545e192
BSF030NE2LQXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 75A; 28W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 75A
On-state resistance: 3mΩ
Power dissipation: 28W
Gate-source voltage: ±25V
Case: CanPAK™ SQ; MG-WDSON-2
Produkt ist nicht verfügbar
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1ED020I12B2XUMA1 Infineon-1ED020I12_B2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344bf16f84ca6
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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TLE9850QXXUMA1 Infineon-TLE9850QX-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c71b5849738ba
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48
Type of integrated circuit: driver
Case: VQFN48
Mounting: SMD
Kind of integrated circuit: motor controller
Produkt ist nicht verfügbar
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FF200R12KS4HOSA1 FF200R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.4kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF400R12KE3HOSA1 FF400R12KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: FF400R12KE3HOSA1
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+256.96 EUR
Mindestbestellmenge: 10
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FZ900R12KP4HOSA1 Infineon-FZ900R12KP4-DS-v03_00-EN.pdf?fileId=db3a30431f848401011fb7be4fe55944
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+198.98 EUR
Mindestbestellmenge: 10
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STT3300N16P76XPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Case: BG-PS55-1
Semiconductor structure: opposing
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Produkt ist nicht verfügbar
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STT3300N18P76XPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 3.3kA; BG-PS55-1; screw; screw
Case: BG-PS55-1
Semiconductor structure: opposing
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Max. off-state voltage: 1.8kV
Load current: 3.3kA
Produkt ist nicht verfügbar
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IPA60R230P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CD74818F51BF&compId=IPA60R230P6-DTE.pdf?ci_sign=4eded1c8a7f006aee967ee72659e80ba3017b516
IPA60R230P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
36+2.02 EUR
38+1.92 EUR
250+1.87 EUR
Mindestbestellmenge: 22
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IPA60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1AD96D8E00749&compId=IPA60R099P7.pdf?ci_sign=7eff8bdfbd3710d012680df6a59449a03e6ea114
IPA60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R165CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B53FF943B1BF&compId=IPA60R165CP-DTE.pdf?ci_sign=985e81116c0f64db57f9bfbef183714745f5854e
IPA60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R120C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80FB45DB9AA0C7&compId=IPA60R120C7.pdf?ci_sign=3083aa4cc297038ef65fd768dad53daafdfb3e1f
IPA60R120C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 66A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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IPA60R170CFD7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD81071412BAE0C7&compId=IPA60R170CFD7.pdf?ci_sign=472c564ec0979ccb100660718b6ed72e21d10351
IPA60R170CFD7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 28nC
Pulsed drain current: 51A
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D0410408F1BF&compId=IPA60R330P6-DTE.pdf?ci_sign=8fe26dec6918ab4a64fbe3d08629bc3f7a6abfc2
IPA60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CB573E1511BF&compId=IPA60R160P6-DTE.pdf?ci_sign=00d168e35ae5fbfea8f6315fd81963926b971ae3
IPA60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD80EED772EC20C7&compId=IPA60R099C7.pdf?ci_sign=0c95349270cbb480277ccc7e7c7a8b4e2a698a7b
IPA60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B2A4227451BF&compId=IPA60R250CP-DTE.pdf?ci_sign=37e3ab36241b6eff66e7b31ab2248f530ab5031a
IPA60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C323883031BF&compId=IPA60R380E6-DTE.pdf?ci_sign=37cce844c112f280e477554d4c62eaaefb14c002
IPA60R380E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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