Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152101) > Seite 2532 nach 2536
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CY14B101KA-SP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel; tube Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: SSOP48 Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 1Mb SRAM Memory organisation: 128kx8bit Kind of package: tube Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B101LA-SP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel; tube Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: SSOP48 Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 1Mb SRAM Memory organisation: 128kx8bit Kind of package: tube Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B101LA-SP25XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: SSOP48 Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 1Mb SRAM Memory organisation: 128kx8bit Kind of package: reel; tape Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B104M-ZSP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit Kind of package: in-tray Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B104M-ZSP25XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit Kind of package: reel; tape Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B104NA-ZSP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit Kind of package: in-tray Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B104NA-ZSP25XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit Kind of package: reel; tape Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B108M-ZSP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 8Mb SRAM Memory organisation: 512kx16bit Kind of package: in-tray Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B108M-ZSP25XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 8Mb SRAM Memory organisation: 512kx16bit Kind of package: reel; tape Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B108N-ZSP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 8Mb SRAM Memory organisation: 512kx16bit Kind of package: in-tray Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B116N-ZSP25XI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 16Mb SRAM Memory organisation: 1Mx16bit Kind of package: in-tray Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
CY14B116N-ZSP25XIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel Mounting: SMD Kind of interface: parallel Type of integrated circuit: SRAM memory Case: TSOP54 II Operating temperature: -40...85°C Access time: 25ns Supply voltage: 2.7...3.6V DC Memory: 16Mb SRAM Memory organisation: 1Mx16bit Kind of package: reel; tape Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
BFR183E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 65mA Power dissipation: 0.45W Case: SOT23 Current gain: 100 Mounting: SMD Frequency: 8GHz Application: automotive industry |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB030N08N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSC030N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IPB010N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7 Mounting: SMD Case: PG-TO263-7 On-state resistance: 1mΩ Gate-source voltage: ±20V Power dissipation: 300W Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain current: 180A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSZ240N12NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 37A Power dissipation: 66W Case: PG-TSDSON-8 On-state resistance: 24mΩ Mounting: SMD Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSC054N04NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8 On-state resistance: 5.4mΩ Power dissipation: 57W Gate-source voltage: ±20V Drain current: 81A Drain-source voltage: 40V Case: PG-TDSON-8 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 On-state resistance: 3.4mΩ Power dissipation: 52W Gate-source voltage: ±20V Drain current: 40A Drain-source voltage: 40V Case: PG-TSDSON-8 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W On-state resistance: 1.4mΩ Power dissipation: 89W Gate-source voltage: ±20V Drain current: 180A Drain-source voltage: 40V Case: CanPAK™ MX; MG-WDSON-2 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSC014N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSC014N04LSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IPB014N04NF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT Gate charge: 159nC On-state resistance: 1.03mΩ Power dissipation: 188W Gate-source voltage: 20V Drain-source voltage: 40V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Mounting: SMD Electrical mounting: SMT |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUT300N08S5N012ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 200A Power dissipation: 200W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IAUT240N08S5N019ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 240A Power dissipation: 230W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IAUT260N10S5N019ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 260A Power dissipation: 300W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IAUT300N10S5N015ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
CYW20706UA2KFFB4GT | INFINEON TECHNOLOGIES |
![]() Description: Module: WiFi |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR198E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR198WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ Mounting: SMD Case: SC70; SOT323 Type of transistor: PNP Collector current: 0.1A Power dissipation: 0.25W Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 70 Application: automotive industry Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 190MHz |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
IPB180N10S402ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: TO263-7 Gate-source voltage: 20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 156nC Kind of channel: enhancement Electrical mounting: SMT Technology: MOSFET Application: automotive industry |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ISC080N10NM6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IFX1050G | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA Type of integrated circuit: interface Mounting: SMD Kind of integrated circuit: transceiver Operating temperature: -40...150°C DC supply current: 70mA Number of receivers: 1 Number of transmitters: 1 Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Interface: CAN Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262 Mounting: THT Turn-on time: 35ns Gate charge: 77nC Turn-off time: 176ns Gate-emitter voltage: ±20V Collector current: 39A Pulsed collector current: 72A Power dissipation: 123W Collector-emitter voltage: 600V Kind of package: tube Type of transistor: IGBT Case: TO262 Technology: Trench |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IRGSL4062DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 48A; 250W; TO262 Mounting: THT Collector current: 48A Power dissipation: 250W Collector-emitter voltage: 600V Kind of package: tube Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO262 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
T501N70TOHXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray Case: BG-T7626K-1 Mounting: Press-Pack Kind of package: in-tray Gate current: 350mA Load current: 640A Max. load current: 1kA Max. off-state voltage: 7kV Max. forward impulse current: 13.5kA Type of thyristor: hockey-puck Features of semiconductor devices: phase controlled thyristor (PCT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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BC847BE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 609 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N04S304ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IPB024N08N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.4mΩ Power dissipation: 375W Gate-source voltage: ±20V Case: PG-TO263-3 Kind of channel: enhancement Mounting: SMD Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSC024NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 25A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IR2130JTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7493TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 9.2A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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TD330N16KOFHPSA2 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 12.5kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 330A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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TT330N16KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 10kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
SPW32N50C3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 560V Drain current: 32A Power dissipation: 284W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 170nC Kind of channel: enhancement |
auf Bestellung 7956 Stücke: Lieferzeit 14-21 Tag (e) |
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ISS55EP06LMXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; P; 60V; 180mA; 400mW; SOT23 Type of transistor: P-MOSFET Technology: MOSFET Polarisation: P Drain-source voltage: 60V Drain current: 0.18A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: 20V On-state resistance: 5.5Ω Mounting: SMD Gate charge: 590pC Kind of channel: enhancement |
auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2127STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2113MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ065N03LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Drain-source voltage: 30V Drain current: 40A Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Power dissipation: 26W Case: PG-TSDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
ISZ065N03L5SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 30V; 40A; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 30V Drain current: 40A Gate-source voltage: 20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement Electrical mounting: SMT |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU50R1K4CEBKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK Kind of package: tube Polarisation: unipolar On-state resistance: 1.4Ω Drain current: 3.1A Gate-source voltage: ±20V Power dissipation: 25W Drain-source voltage: 500V Technology: CoolMOS™ CE Kind of channel: enhancement Case: IPAK Type of transistor: N-MOSFET Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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IPB011N04NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Drain-source voltage: 40V Drain current: 180A Case: PG-TO263-7 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: SMD Polarisation: unipolar On-state resistance: 1.1mΩ Gate-source voltage: ±20V Power dissipation: 250W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
IPP011N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
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BDP949H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 5W Case: SOT223-4; TO261-4 Mounting: SMD Frequency: 100MHz Application: automotive industry |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS169IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL2910STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
CY14B256PA-SFXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial Type of integrated circuit: SRAM memory Frequency: 40MHz Case: SOIC16 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: tube Supply voltage: 2.7...3.6V DC Memory organisation: 32kx8bit Memory: 256kb SRAM Kind of memory: NV SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
CY14B101KA-SP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel; tube
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: SSOP48
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel; tube
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: SSOP48
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101LA-SP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel; tube
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: SSOP48
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel; tube
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: SSOP48
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Kind of package: tube
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B101LA-SP25XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: SSOP48
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; SSOP48; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: SSOP48
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B104M-ZSP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B104M-ZSP25XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B104NA-ZSP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B104NA-ZSP25XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B108M-ZSP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B108M-ZSP25XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B108N-ZSP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B116N-ZSP25XI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: in-tray
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14B116N-ZSP25XIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 25ns
Supply voltage: 2.7...3.6V DC
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Kind of package: reel; tape
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BFR183E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 450mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.45W
Case: SOT23
Current gain: 100
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.1 EUR |
IPB030N08N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC030N08NS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB010N06NATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Mounting: SMD
Case: PG-TO263-7
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain current: 180A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Mounting: SMD
Case: PG-TO263-7
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain current: 180A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ240N12NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
On-state resistance: 24mΩ
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
On-state resistance: 24mΩ
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC054N04NSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
On-state resistance: 5.4mΩ
Power dissipation: 57W
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
On-state resistance: 5.4mΩ
Power dissipation: 57W
Gate-source voltage: ±20V
Drain current: 81A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ034N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
On-state resistance: 3.4mΩ
Power dissipation: 52W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 40V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
On-state resistance: 3.4mΩ
Power dissipation: 52W
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 40V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSB014N04LX3GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
On-state resistance: 1.4mΩ
Power dissipation: 89W
Gate-source voltage: ±20V
Drain current: 180A
Drain-source voltage: 40V
Case: CanPAK™ MX; MG-WDSON-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
On-state resistance: 1.4mΩ
Power dissipation: 89W
Gate-source voltage: ±20V
Drain current: 180A
Drain-source voltage: 40V
Case: CanPAK™ MX; MG-WDSON-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
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BSC014N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC014N04LSIATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB014N04NF2SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Gate-source voltage: 20V
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; 40V; 188W; D2PAK,TO263; SMT
Gate charge: 159nC
On-state resistance: 1.03mΩ
Power dissipation: 188W
Gate-source voltage: 20V
Drain-source voltage: 40V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.06 EUR |
IAUT300N08S5N012ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUT200N08S5N023ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Power dissipation: 200W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 200A
Power dissipation: 200W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUT240N08S5N019ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 230W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUT260N10S5N019ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IAUT300N10S5N015ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CYW20706UA2KFFB4GT |
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auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 5.42 EUR |
BCR198E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.048 EUR |
BCR198WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Mounting: SMD
Case: SC70; SOT323
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 70
Application: automotive industry
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 190MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 250mW; SC70,SOT323; R1: 47kΩ
Mounting: SMD
Case: SC70; SOT323
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 70
Application: automotive industry
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 190MHz
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.054 EUR |
IAUA180N10S5N029AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB180N10S402ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 4.05 EUR |
ISC080N10NM6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 1.16 EUR |
IFX1050G |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...150°C
DC supply current: 70mA
Number of receivers: 1
Number of transmitters: 1
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Interface: CAN
Case: PG-DSO-8
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...150°C
DC supply current: 70mA
Number of receivers: 1
Number of transmitters: 1
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Interface: CAN
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRGSL4062D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Case: TO262
Technology: Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Case: TO262
Technology: Trench
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.3 EUR |
IRGSL4062DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T501N70TOHXPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Gate current: 350mA
Load current: 640A
Max. load current: 1kA
Max. off-state voltage: 7kV
Max. forward impulse current: 13.5kA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Gate current: 350mA
Load current: 640A
Max. load current: 1kA
Max. off-state voltage: 7kV
Max. forward impulse current: 13.5kA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC847BE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
459+ | 0.16 EUR |
601+ | 0.12 EUR |
IPD90N04S304ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB024N08N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC024NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2130JTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 5.93 EUR |
IRF7493TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TD330N16KOFHPSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT330N16KOF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 560V
Drain current: 32A
Power dissipation: 284W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 170nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 560V
Drain current: 32A
Power dissipation: 284W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 170nC
Kind of channel: enhancement
auf Bestellung 7956 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 5.69 EUR |
90+ | 5.12 EUR |
ISS55EP06LMXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 180mA; 400mW; SOT23
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 5.5Ω
Mounting: SMD
Gate charge: 590pC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 180mA; 400mW; SOT23
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.18A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 5.5Ω
Mounting: SMD
Gate charge: 590pC
Kind of channel: enhancement
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.036 EUR |
IRS2127STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.77 EUR |
IRS2113MTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.97 EUR |
BSZ065N03LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
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ISZ065N03L5SATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.3 EUR |
IPU50R1K4CEBKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Kind of package: tube
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Case: IPAK
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Kind of package: tube
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Case: IPAK
Type of transistor: N-MOSFET
Mounting: THT
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IPB011N04LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Power dissipation: 250W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
Case: PG-TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Power dissipation: 250W
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IPP011N04NF2SAKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.89 EUR |
BDP949H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 5W
Case: SOT223-4; TO261-4
Mounting: SMD
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 5W
Case: SOT223-4; TO261-4
Mounting: SMD
Frequency: 100MHz
Application: automotive industry
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.44 EUR |
BSS169IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.073 EUR |
IRL2910STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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CY14B256PA-SFXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Frequency: 40MHz
Case: SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: NV SRAM
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Frequency: 40MHz
Case: SOIC16
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: tube
Supply voltage: 2.7...3.6V DC
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: NV SRAM
Produkt ist nicht verfügbar
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