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IRF7328TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7328TRPBF IRF7328TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
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CY8C4014SXI-421T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller
Type of integrated circuit: PSoC microcontroller
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.12 EUR
Mindestbestellmenge: 2500
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IPP048N04NGXKSA1 IPP048N04NGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E993296386811C&compId=IPP048N04NG-DTE.pdf?ci_sign=8e6fab273f650bbf26b7fc696887f5f44527a3d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Drain-source voltage: 40V
Drain current: 70A
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Power dissipation: 79W
Produkt ist nicht verfügbar
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IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT022N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPT022N10NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183f00b5b7e4657 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
1800+1.67 EUR
Mindestbestellmenge: 1800
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ISC022N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+3.33 EUR
Mindestbestellmenge: 5000
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IAUC26N10S5L245ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 37.8mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 40W
Pulsed drain current: 104A
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
Produkt ist nicht verfügbar
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IPA126N10NM3SXKSA1 IPA126N10NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA126N10NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d07a0046e37 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 156A; 33W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 12.6mΩ
Drain current: 28A
Gate-source voltage: ±20V
Power dissipation: 33W
Pulsed drain current: 156A
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPP026N10NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66cdf70002 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 184A; 250W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 2.6mΩ
Drain current: 184A
Gate-source voltage: 20V
Power dissipation: 250W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Gate charge: 103nC
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
50+2.72 EUR
200+2.45 EUR
Mindestbestellmenge: 50
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IPB026N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4c3afb01b06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 162A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Mounting: SMD
On-state resistance: 2.65mΩ
Drain current: 162A
Gate-source voltage: 20V
Power dissipation: 250W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 103nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+2.07 EUR
Mindestbestellmenge: 800
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TLE4207GXUMA2 TLE4207GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF2B14155202745&compId=TLE4207G.pdf?ci_sign=fe0125a4b300ae58a3cda1acbb44855e4d17b0aa Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
Mindestbestellmenge: 42
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IAUC24N10S5L300ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 38W
Case: PG-TDSON-8
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 96A
Produkt ist nicht verfügbar
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IRFR24N15DTRPBF IRFR24N15DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEF7D18E015EA&compId=IRFR24N15DTRPBF.pdf?ci_sign=ea45edf9f549a5715b095bc03e8c0b797eaf525c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Drain current: 24A
Power dissipation: 140W
Drain-source voltage: 150V
Technology: HEXFET®
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPF024N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF024N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f45eff876221 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 227A; 250W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 227A
Power dissipation: 250W
Case: D2PAK-7
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhancement
Electrical mounting: SMT
Gate-source voltage: 20V
Technology: MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+2.1 EUR
Mindestbestellmenge: 800
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IPAW60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
90+1.1 EUR
Mindestbestellmenge: 90
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IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1752E50D38749&compId=IPP60R120P7.pdf?ci_sign=db5d6da5af7792cb5fe3e97f682fefdab165ae7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: D2PAK
Produkt ist nicht verfügbar
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IPW60R120P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf045c0225 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
30+3.16 EUR
Mindestbestellmenge: 30
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BTS70302EPAXUMA1 BTS70302EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
Operating temperature: -40...150°C
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
auf Bestellung 2989 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
40+1.8 EUR
45+1.62 EUR
Mindestbestellmenge: 36
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BSC0902NSIATMA1 BSC0902NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38756DA3E34011C&compId=BSC0902NSI-DTE.pdf?ci_sign=63f92bce853f2e97e3e40f57262a8a89d6710ac4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4535 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
73+0.98 EUR
81+0.89 EUR
95+0.76 EUR
104+0.69 EUR
Mindestbestellmenge: 63
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BSC0909NSATMA1 BSC0909NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875CDD9985211C&compId=BSC0909NS-DTE.pdf?ci_sign=3419b4f3de333acd915c15565b124484cd2d6348 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
100+0.72 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 73
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3918 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.43 EUR
32+2.25 EUR
38+1.93 EUR
66+1.09 EUR
71+1.02 EUR
Mindestbestellmenge: 30
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2951 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.47 EUR
38+1.89 EUR
47+1.53 EUR
50+1.44 EUR
250+1.39 EUR
Mindestbestellmenge: 29
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BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DBADED761611C&compId=BSC340N08NS3G-DTE.pdf?ci_sign=aa9b337a0db21dfe8f5ac636b1ed5ff1110c9458 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
93+0.77 EUR
118+0.61 EUR
214+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 76
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BSC093N04LSGATMA1 BSC093N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38795A97469411C&compId=BSC093N04LSG-DTE.pdf?ci_sign=1048a566bfd8c900fb6791183d0b42909927a73e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3750 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
116+0.62 EUR
128+0.56 EUR
136+0.53 EUR
Mindestbestellmenge: 84
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387420481F9A11C&compId=BSC080N03MSG-DTE.pdf?ci_sign=67d4652ce5e7611550106b6c964b5ad6af114d39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
133+0.54 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 100
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BSC0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSC0902NSATMA1 BSC0902NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875541E9DFA11C&compId=BSC0902NS-DTE.pdf?ci_sign=203977e4a66c3f26c2bd7c796245641d42955b1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC097N06NSATMA1 BSC097N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387970BDE37411C&compId=BSC097N06NS-DTE.pdf?ci_sign=c5a024af0890efb681719e6169d21bdfa1fda0cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0901NSIATMA1 BSC0901NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874DAA9396E11C&compId=BSC0901NSI-DTE.pdf?ci_sign=1a6e993ca51164ce3845b282c744d47c054d2816 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 BSC009NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C232ADC6DE811C&compId=BSC009NE2LS-DTE.pdf?ci_sign=474c14cd09ac2b54f5c408db185963e09191a5c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010NE2LSATMA1 BSC010NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD29AC7BFD011C&compId=BSC010NE2LS-DTE.pdf?ci_sign=4037dffe638488c62f3a77b32205acbf9b96de48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD40EAD5E9A11C&compId=BSC010NE2LSI-DTE.pdf?ci_sign=ab0e926d776d7e5a1947b6a42d0ee3b7e575e2bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C261A139DAE11C&compId=BSC014NE2LSI-DTE.pdf?ci_sign=0a69ffadf1ecef5f2deecb3baae5b5493d0cb0ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC019N04LSATMA1 BSC019N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C276C164B8C11C&compId=BSC019N04LS-DTE.pdf?ci_sign=24f98007f7062467d0d86250c8fc347c8ca5891a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC022N04LSATMA1 BSC022N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C27F07B750811C&compId=BSC022N04LS-dte.pdf?ci_sign=125ecfb34873602b4a13f421a132720c70763d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC026N04LSATMA1 BSC026N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050NE2LSATMA1 BSC050NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD915914BBA11C&compId=BSC050NE2LS-dte.pdf?ci_sign=9758965f29efc39e420dce08de5d90c53062993f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0901NSATMA1 BSC0901NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874C74A719211C&compId=BSC0901NS-DTE.pdf?ci_sign=c4ca8f01c906c426307c8d2a8a0a879bd446b155 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0904NSIATMA1 BSC0904NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4913HTSA1 INFINEON TECHNOLOGIES Infineon-TLE4913-DS-v02_03-EN.pdf?fileId=5546d46269e1c019016ac0287fa13265 Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Type of sensor: Hall
Case: SC59
Mounting: SMT
Operating temperature: -40...85°C
Range of detectable magnetic field: -5...5mT
Kind of sensor: omnipolar
Supply voltage: 2.4...5.5V DC
Produkt ist nicht verfügbar
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TLE49SR_EVALBOARD INFINEON TECHNOLOGIES Category: Unclassified
Description: TLE49SR_EVALBOARD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+207.32 EUR
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BFR193E6327 BFR193E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CF209426011C&compId=BFR193E6327-dte.pdf?ci_sign=4c5307a786cc21bca7483237e4b4a15904a55f4d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 2064 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
226+0.32 EUR
350+0.2 EUR
481+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 179
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BFR193FH6327 BFR193FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D0E2A79A611C&compId=BFR193FH6327-dte.pdf?ci_sign=36a79ff6ce9c25acd1f0aac379677a9982028e7d Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 1346 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
360+0.2 EUR
506+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 278
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BFR193L3E6327 BFR193L3E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D61F8F1C611C&compId=BFR193L3E6327-dte.pdf?ci_sign=159eb82f3466f047c6bf832485697538eb140a55 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
325+0.22 EUR
Mindestbestellmenge: 200
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IPP051N15N5AKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP051N15N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.79 EUR
Mindestbestellmenge: 50
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IRFR2405TRLPBF IRFR2405TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS87H6327FTSA1 BSS87H6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84704B7FFF10B&compId=BSS87H6327FTSA1.pdf?ci_sign=f9330c95011fdd909fb6f9e38030ee639046a456 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Case: SOT89-4
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 1W
Kind of channel: enhancement
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
210+0.34 EUR
262+0.27 EUR
286+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 143
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BSP88H6327XTSA1 BSP88H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76899C50F310B&compId=BSP88H6327XTSA1.pdf?ci_sign=7f9ace14eab967c17352ef0016c7b9645cecf49a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Case: SOT223
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 1.8W
Kind of channel: enhancement
auf Bestellung 127 Stücke:
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100+0.72 EUR
127+0.56 EUR
Mindestbestellmenge: 100
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IR2214SSPBF IR2214SSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Kind of integrated circuit: gate driver; high-/low-side
auf Bestellung 22 Stücke:
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10+7.26 EUR
12+6.23 EUR
13+5.66 EUR
Mindestbestellmenge: 10
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BFP405E6327 BFP405E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BSP752TXUMA1 INFINEON TECHNOLOGIES Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BSP752T BSP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BSP295H6327XTSA1 BSP295H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A711EB905DB10B&compId=BSP295H6327XTSA1.pdf?ci_sign=12d54ca60e42968960e2526667870bf482146104 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.8W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
On-state resistance: 0.3Ω
Drain current: 1.8A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
84+0.85 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7328TRPBF pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd
IRF7328TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4014SXI-421T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller
Type of integrated circuit: PSoC microcontroller
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.12 EUR
Mindestbestellmenge: 2500
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IPP048N04NGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E993296386811C&compId=IPP048N04NG-DTE.pdf?ci_sign=8e6fab273f650bbf26b7fc696887f5f44527a3d6
IPP048N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Drain-source voltage: 40V
Drain current: 70A
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Power dissipation: 79W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT022N10NF2SATMA1 Infineon-IPT022N10NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183f00b5b7e4657
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1800+1.67 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
ISC022N10NM6ATMA1 Infineon-ISC022N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017babad55375f91
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+3.33 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUC26N10S5L245ATMA1 Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 37.8mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 40W
Pulsed drain current: 104A
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA126N10NM3SXKSA1 Infineon-IPA126N10NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d07a0046e37
IPA126N10NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 156A; 33W; TO220FP
Case: TO220FP
Mounting: THT
On-state resistance: 12.6mΩ
Drain current: 28A
Gate-source voltage: ±20V
Power dissipation: 33W
Pulsed drain current: 156A
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP026N10NF2SAKMA1 Infineon-IPP026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66cdf70002
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 184A; 250W; TO220-3
Case: TO220-3
Mounting: THT
On-state resistance: 2.6mΩ
Drain current: 184A
Gate-source voltage: 20V
Power dissipation: 250W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Gate charge: 103nC
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.72 EUR
200+2.45 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPB026N10NF2SATMA1 Infineon-IPB026N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4c3afb01b06
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 162A; 250W; D2PAK,TO263; SMT
Case: D2PAK; TO263
Mounting: SMD
On-state resistance: 2.65mΩ
Drain current: 162A
Gate-source voltage: 20V
Power dissipation: 250W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
Gate charge: 103nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+2.07 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
TLE4207GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF2B14155202745&compId=TLE4207G.pdf?ci_sign=fe0125a4b300ae58a3cda1acbb44855e4d17b0aa
TLE4207GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 96A; 38W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 38W
Case: PG-TDSON-8
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 96A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR24N15DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEF7D18E015EA&compId=IRFR24N15DTRPBF.pdf?ci_sign=ea45edf9f549a5715b095bc03e8c0b797eaf525c
IRFR24N15DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Drain current: 24A
Power dissipation: 140W
Drain-source voltage: 150V
Technology: HEXFET®
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF024N10NF2SATMA1 Infineon-IPF024N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f45eff876221
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 227A; 250W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 227A
Power dissipation: 250W
Case: D2PAK-7
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhancement
Electrical mounting: SMT
Gate-source voltage: 20V
Technology: MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+2.1 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPAW60R180P7SXKSA1 Infineon-IPAW60R180P7S-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e659c3d5009
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+1.1 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1752E50D38749&compId=IPP60R120P7.pdf?ci_sign=db5d6da5af7792cb5fe3e97f682fefdab165ae7b
IPP60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R120P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R120P7XKSA1 Infineon-IPW60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf045c0225
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+3.16 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BTS70302EPAXUMA1 Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f
BTS70302EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
Operating temperature: -40...150°C
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
auf Bestellung 2989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.8 EUR
45+1.62 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
BSC0902NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38756DA3E34011C&compId=BSC0902NSI-DTE.pdf?ci_sign=63f92bce853f2e97e3e40f57262a8a89d6710ac4
BSC0902NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
73+0.98 EUR
81+0.89 EUR
95+0.76 EUR
104+0.69 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
BSC0909NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875CDD9985211C&compId=BSC0909NS-DTE.pdf?ci_sign=3419b4f3de333acd915c15565b124484cd2d6348
BSC0909NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
100+0.72 EUR
227+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
BSC030P03NS3GAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA911EA046D911CC&compId=BSC030P03NS3GAUMA1-DTE.pdf?ci_sign=c1254b06c5c76b1ff31ae1664f0828f8ca5ba6e1
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3918 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
32+2.25 EUR
38+1.93 EUR
66+1.09 EUR
71+1.02 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BSC028N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C290BBFAA9011C&compId=BSC028N06NS-DTE.pdf?ci_sign=9bc8eb8beb6cd7c1675a2c5290d0356c5055d7c0
BSC028N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2951 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.47 EUR
38+1.89 EUR
47+1.53 EUR
50+1.44 EUR
250+1.39 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BSC340N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DBADED761611C&compId=BSC340N08NS3G-DTE.pdf?ci_sign=aa9b337a0db21dfe8f5ac636b1ed5ff1110c9458
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
93+0.77 EUR
118+0.61 EUR
214+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
BSC093N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38795A97469411C&compId=BSC093N04LSG-DTE.pdf?ci_sign=1048a566bfd8c900fb6791183d0b42909927a73e
BSC093N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
116+0.62 EUR
128+0.56 EUR
136+0.53 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BSC080N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387420481F9A11C&compId=BSC080N03MSG-DTE.pdf?ci_sign=67d4652ce5e7611550106b6c964b5ad6af114d39
BSC080N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
133+0.54 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0902NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875541E9DFA11C&compId=BSC0902NS-DTE.pdf?ci_sign=203977e4a66c3f26c2bd7c796245641d42955b1d
BSC0902NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC097N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387970BDE37411C&compId=BSC097N06NS-DTE.pdf?ci_sign=c5a024af0890efb681719e6169d21bdfa1fda0cf
BSC097N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46A; 36W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0901NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874DAA9396E11C&compId=BSC0901NSI-DTE.pdf?ci_sign=1a6e993ca51164ce3845b282c744d47c054d2816
BSC0901NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C232ADC6DE811C&compId=BSC009NE2LS-DTE.pdf?ci_sign=474c14cd09ac2b54f5c408db185963e09191a5c0
BSC009NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D674C41301011C&compId=BSC010N04LS-DTE.pdf?ci_sign=d42a193b95255dc1f0aefdcdc81acdbfe54a88bf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010N04LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A1D67EF5A7A1411C&compId=BSC010N04LSI-DTE.pdf?ci_sign=720cdb79dd60710691892f7034e3197c240f61f0
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD29AC7BFD011C&compId=BSC010NE2LS-DTE.pdf?ci_sign=4037dffe638488c62f3a77b32205acbf9b96de48
BSC010NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD40EAD5E9A11C&compId=BSC010NE2LSI-DTE.pdf?ci_sign=ab0e926d776d7e5a1947b6a42d0ee3b7e575e2bc
BSC010NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C261A139DAE11C&compId=BSC014NE2LSI-DTE.pdf?ci_sign=0a69ffadf1ecef5f2deecb3baae5b5493d0cb0ab
BSC014NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C276C164B8C11C&compId=BSC019N04LS-DTE.pdf?ci_sign=24f98007f7062467d0d86250c8fc347c8ca5891a
BSC019N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC022N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C27F07B750811C&compId=BSC022N04LS-dte.pdf?ci_sign=125ecfb34873602b4a13f421a132720c70763d0b
BSC022N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba
BSC026N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC026NE2LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94
BSC026NE2LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC032NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc
BSC032NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD915914BBA11C&compId=BSC050NE2LS-dte.pdf?ci_sign=9758965f29efc39e420dce08de5d90c53062993f
BSC050NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0901NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3874C74A719211C&compId=BSC0901NS-DTE.pdf?ci_sign=c4ca8f01c906c426307c8d2a8a0a879bd446b155
BSC0901NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0904NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92
BSC0904NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4913HTSA1 Infineon-TLE4913-DS-v02_03-EN.pdf?fileId=5546d46269e1c019016ac0287fa13265
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Type of sensor: Hall
Case: SC59
Mounting: SMT
Operating temperature: -40...85°C
Range of detectable magnetic field: -5...5mT
Kind of sensor: omnipolar
Supply voltage: 2.4...5.5V DC
Produkt ist nicht verfügbar
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TLE49SR_EVALBOARD
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TLE49SR_EVALBOARD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+207.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BFR193E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CF209426011C&compId=BFR193E6327-dte.pdf?ci_sign=4c5307a786cc21bca7483237e4b4a15904a55f4d
BFR193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 2064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
226+0.32 EUR
350+0.2 EUR
481+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 179
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BFR193FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D0E2A79A611C&compId=BFR193FH6327-dte.pdf?ci_sign=36a79ff6ce9c25acd1f0aac379677a9982028e7d
BFR193FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 1346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
360+0.2 EUR
506+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BFR193L3E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191D61F8F1C611C&compId=BFR193L3E6327-dte.pdf?ci_sign=159eb82f3466f047c6bf832485697538eb140a55
BFR193L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
325+0.22 EUR
Mindestbestellmenge: 200
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IPP051N15N5AKSA1 Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP051N15N5XKSA1 Infineon-IPP051N15N5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.79 EUR
Mindestbestellmenge: 50
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IRFR2405TRLPBF pVersion=0046&contRep=ZT&docId=E221C187810C1BF1A303005056AB0C4F&compId=irfr2405pbf.pdf?ci_sign=f5da482096c50158e5b20a4fa0a70656b1e3e8e2
IRFR2405TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS87H6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A84704B7FFF10B&compId=BSS87H6327FTSA1.pdf?ci_sign=f9330c95011fdd909fb6f9e38030ee639046a456
BSS87H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Case: SOT89-4
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 1W
Kind of channel: enhancement
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
210+0.34 EUR
262+0.27 EUR
286+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BSP88H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76899C50F310B&compId=BSP88H6327XTSA1.pdf?ci_sign=7f9ace14eab967c17352ef0016c7b9645cecf49a
BSP88H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Case: SOT223
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 1.8W
Kind of channel: enhancement
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
127+0.56 EUR
Mindestbestellmenge: 100
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IR2214SSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA33D55348713D7&compId=IR2114SSPBF.pdf?ci_sign=76268fd6f1521786ea6d8559b91e974700f61597
IR2214SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.5W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
Kind of integrated circuit: gate driver; high-/low-side
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.26 EUR
12+6.23 EUR
13+5.66 EUR
Mindestbestellmenge: 10
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BFP405E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD623B4773655EA&compId=BFP405.pdf?ci_sign=bbd5eba073d89df9b5be3a85a32e193fbe8f17b9
BFP405E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BSP752TXUMA1 Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
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BSP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d
BSP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Output voltage: 52V
Type of integrated circuit: power switch
Technology: Classic PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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BSP295H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A711EB905DB10B&compId=BSP295H6327XTSA1.pdf?ci_sign=12d54ca60e42968960e2526667870bf482146104
BSP295H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.8W
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
On-state resistance: 0.3Ω
Drain current: 1.8A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
84+0.85 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 63
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