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IPB60R180C7ATMA1 IPB60R180C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA36D388DCE6143&compId=IPB60R180C7.pdf?ci_sign=6efc51a6c3abf5b6fbce0ca5738317783afa99b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
36+2 EUR
38+1.89 EUR
250+1.87 EUR
500+1.83 EUR
Mindestbestellmenge: 23
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IPA60R180P7XKSA1 IPA60R180P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8121E29F2620C7&compId=IPA60R180P7.pdf?ci_sign=c50b97310bf5cc30162633128355da9e77326508 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Version: ESD
Pulsed drain current: 53A
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IPB60R180P7ATMA1 IPB60R180P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681644F8FF333D6&compId=IPB60R180P7.pdf?ci_sign=21f63003e7f8036ec56aad5bc3ee810eecdc5f34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
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IPL60R180P6AUMA1 IPL60R180P6AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5943E2926E171BF&compId=IPL60R180P6-DTE.pdf?ci_sign=b02e3d2644dbb3042eedeef7a41556e3d673dce5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEF0D85140B3D1&compId=IPZA60R180P7.pdf?ci_sign=1b36fb9135650fbca86aa6ded45a1ec43783c213 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPD60R180P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPD60R180P7SE8228AUMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.71 EUR
Mindestbestellmenge: 2500
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IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3824202448143&compId=IPB80N06S2L07.pdf?ci_sign=8bcfcd26c285b239e9002caf6ee87aba273bb8d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 893 Stücke:
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24+3.05 EUR
36+2 EUR
38+1.89 EUR
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IPI80N06S407AKSA2 IPI80N06S407AKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA5FF19D30D51A0D3&compId=IPI80N06S407AKSA2.pdf?ci_sign=728a6f37078e3c0f6d73df921d81cf7ae1675834 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
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33+2.23 EUR
36+2.02 EUR
37+1.96 EUR
40+1.79 EUR
Mindestbestellmenge: 33
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IPP80N06S2H5AKSA2 IPP80N06S2H5AKSA2 INFINEON TECHNOLOGIES IPx80N06S2-H5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
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BCR555E6327HTSA1 BCR555E6327HTSA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Case: SOT23
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
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CY62148EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
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CY62148G-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
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CY62148G30-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
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CY7C109D-10ZXI INFINEON TECHNOLOGIES download description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; TSOP32; parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32
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CY7C109D-10ZXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; TSOP32; parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32
Produkt ist nicht verfügbar
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1EDC40I12AHXUMA1 1EDC40I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Produkt ist nicht verfügbar
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IPD053N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.03 EUR
Mindestbestellmenge: 2500
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0B4CC175DA1EC&compId=pvin.pdf?ci_sign=a3aca8335bf6d9d460b8a7a1ccdacbbc0ac5365d Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Manufacturer series: PVI-NPbF
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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PVI1050NSPBFHLLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - Unclassified
Description: PVI1050NSPBFHLLA1
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.89 EUR
Mindestbestellmenge: 50
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ISC045N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.23 EUR
Mindestbestellmenge: 5000
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IR2108STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.35A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.87 EUR
Mindestbestellmenge: 2500
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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.16 EUR
Mindestbestellmenge: 2500
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IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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21+3.53 EUR
22+3.39 EUR
23+3.2 EUR
Mindestbestellmenge: 21
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IRFH8324TRPBF IRFH8324TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA57A0ED33F1A303005056AB0C4F&compId=irfh8324pbf.pdf?ci_sign=26d32e2604be70d7c6e34605b726e6dcdfb8b499 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 23A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
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IRFH5020TRPBF IRFH5020TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B53C7E3130F1A303005056AB0C4F&compId=irfh5020pbf.pdf?ci_sign=e3f6da846d9a1b0b329282270b8330e634586bda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5007TRPBF IRFH5007TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B4D3372896F1A303005056AB0C4F&compId=irfh5007pbf.pdf?ci_sign=3fe673522330afbe95ed07a0de695f2cb1c0d729 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8316TRPBF IRFH8316TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC9D730DB15EA&compId=IRFH8316TRPBF.pdf?ci_sign=0c6c58ad69febc9212f942304eab104b62140e16 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFHM8329TRPBF IRFHM8329TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCD1B98B2BF5EA&compId=IRFHM8329TRPBF.pdf?ci_sign=beb2593dcf1d1cccb9082c5760a87532530f3112 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.6W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5025TRPBF IRFH5025TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B55AF29459F1A303005056AB0C4F&compId=irfh5025pbf.pdf?ci_sign=f8c3624dd2c5c91b4633ec75c6e262d12a931b98 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5215TRPBF IRFH5215TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B665D24C3DF1A303005056AB0C4F&compId=irfh5215pbf.pdf?ci_sign=700a7ad6fc2e7d49a82f6b799e9ffda69ebdb8f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
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IRFH4210DTRPBF IRFH4210DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08D6AECB1E1EC&compId=irfh4210dpbf.pdf?ci_sign=674e3ff244880f6b4d370c542d09e3bdc285aa38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH4251DTRPBF IRFH4251DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F0539B895741EC&compId=irfh4251dpbf.pdf?ci_sign=63d09c69c166cecc2695697a1e2de70eccbb9707 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH5053TRPBF IRFH5053TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B576FB1211F1A303005056AB0C4F&compId=irfh5053pbf.pdf?ci_sign=1773d09d6a2e0b2ee77dc3e70632d16bcd007a3c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5210TRPBF IRFH5210TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B649F97DB5F1A303005056AB0C4F&compId=irfh5210pbf.pdf?ci_sign=0763deda32b5a1f8a5ae797c05cb601f0f7fac4d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH6200TRPBF IRFH6200TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B9747C2264F1A303005056AB0C4F&compId=irfh6200pbf.pdf?ci_sign=62fd898ae5f059ad6aae7ce81c47a4d0a9e78a88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7004TRPBF INFINEON TECHNOLOGIES irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
Produkt ist nicht verfügbar
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IRFH7446TRPBF IRFH7446TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 3.3mΩ
Gate charge: 65nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFH7545TRPBF INFINEON TECHNOLOGIES irfh7545pbf.pdf?fileId=5546d462533600a40153561f1e511ef1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Produkt ist nicht verfügbar
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IRFH7921TRPBF IRFH7921TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284B17F1A6F5005056AB5A8F&compId=irfh7921pbf.pdf?ci_sign=265cab4cc1e9d070052d55d43365b805b7b78dd0 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7934TRPBF IRFH7934TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B9FC0F64AAF1A303005056AB0C4F&compId=irfh7934pbf.pdf?ci_sign=aeb4f9409c7cb3a83f718ce7a2c9661c84405b3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8201TRPBF IRFH8201TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC7D71B7C55EA&compId=IRFH8311TRPBF.pdf?ci_sign=c6589ae941f40c6caeca3dd2cb522256801f38f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.4W
Produkt ist nicht verfügbar
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IGCM04F60GAXKMA1 IGCM04F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACB0509D4193D7&compId=IGCM04F60GA.pdf?ci_sign=806d21c01c2492d6102a8d9f29b6a2bea7793a7b Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 230 Stücke:
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5+14.53 EUR
7+10.51 EUR
Mindestbestellmenge: 5
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BTF3080EJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF76602B68740C4&compId=BTF3080EJ.pdf?ci_sign=4917fbb88a9b9364cdde55b74718b3188d1ca5f3 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Case: PG-TDSO-8-31
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-on time: 1.35µs
Turn-off time: 2µs
On-state resistance: 71mΩ
Type of integrated circuit: power switch
Number of channels: 1
Power dissipation: 1.44W
Output current: 3A
Supply voltage: 3...5.5V DC
Kind of output: N-Channel
Output voltage: 40V
Kind of integrated circuit: low-side
Technology: HITFET®
Produkt ist nicht verfügbar
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IRFP4768PBF IRFP4768PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 34 Stücke:
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17+4.42 EUR
19+3.9 EUR
22+3.37 EUR
23+3.2 EUR
Mindestbestellmenge: 17
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IPA320N20NM3SXKSA1 IPA320N20NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA320N20NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d1035e86e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Drain-source voltage: 200V
Drain current: 19A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 104A
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC2B3EB5CC011C&compId=IPI320N20N3G-DTE.pdf?ci_sign=e0d429a5c98a4128004ad9b804e367269248b1b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BCR108E6433HTMA1 INFINEON TECHNOLOGIES bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; SC59; R1: 2.2kΩ; R2: 47kΩ
Application: automotive industry
Polarisation: bipolar
Case: SC59
Mounting: SMD
Type of transistor: NPN
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 20000 Stücke:
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10000+0.044 EUR
Mindestbestellmenge: 10000
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IRFB3806PBF IRFB3806PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 314 Stücke:
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41+1.77 EUR
60+1.21 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 41
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BSP62H6327XTSA1 INFINEON TECHNOLOGIES bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Category: PNP SMD Darlington transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 22000 Stücke:
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1000+0.21 EUR
Mindestbestellmenge: 1000
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BGA616H6327XTSA1 INFINEON TECHNOLOGIES BGA616_Rev2011.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 9000 Stücke:
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3000+0.92 EUR
Mindestbestellmenge: 3000
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC83BDC316811C&compId=IPP200N15N3G-DTE.pdf?ci_sign=38cb5325374ca3da97dcbd9df290e4f9562e6e8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
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24+3 EUR
27+2.69 EUR
28+2.6 EUR
29+2.55 EUR
30+2.45 EUR
Mindestbestellmenge: 24
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SPW20N60CFDFKSA1 INFINEON TECHNOLOGIES SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
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30+4.53 EUR
120+4.08 EUR
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IPP200N25N3GXKSA1 IPP200N25N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8807E583411C&compId=IPP200N25N3G-DTE.pdf?ci_sign=84a757fa8ec3825091407ee834af2c50c992735c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+0.82 EUR
Mindestbestellmenge: 2500
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IRS2104STRPBF INFINEON TECHNOLOGIES irs2104.pdf?fileId=5546d462533600a40153567633f727a1 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500
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IPB60R180C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA36D388DCE6143&compId=IPB60R180C7.pdf?ci_sign=6efc51a6c3abf5b6fbce0ca5738317783afa99b6
IPB60R180C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
auf Bestellung 945 Stücke:
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Anzahl Preis
23+3.12 EUR
36+2 EUR
38+1.89 EUR
250+1.87 EUR
500+1.83 EUR
Mindestbestellmenge: 23
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IPA60R180P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABD8121E29F2620C7&compId=IPA60R180P7.pdf?ci_sign=c50b97310bf5cc30162633128355da9e77326508
IPA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25nC
Version: ESD
Pulsed drain current: 53A
Produkt ist nicht verfügbar
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IPB60R180P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681644F8FF333D6&compId=IPB60R180P7.pdf?ci_sign=21f63003e7f8036ec56aad5bc3ee810eecdc5f34
IPB60R180P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R180P6AUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5943E2926E171BF&compId=IPL60R180P6-DTE.pdf?ci_sign=b02e3d2644dbb3042eedeef7a41556e3d673dce5
IPL60R180P6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R180P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEF0D85140B3D1&compId=IPZA60R180P7.pdf?ci_sign=1b36fb9135650fbca86aa6ded45a1ec43783c213
IPZA60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.69 EUR
Mindestbestellmenge: 2500
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IPD60R180P7SE8228AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.71 EUR
Mindestbestellmenge: 2500
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IPB80N06S2L07ATMA3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA3824202448143&compId=IPB80N06S2L07.pdf?ci_sign=8bcfcd26c285b239e9002caf6ee87aba273bb8d7
IPB80N06S2L07ATMA3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
36+2 EUR
38+1.89 EUR
Mindestbestellmenge: 24
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IPI80N06S407AKSA2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA5FF19D30D51A0D3&compId=IPI80N06S407AKSA2.pdf?ci_sign=728a6f37078e3c0f6d73df921d81cf7ae1675834
IPI80N06S407AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
36+2.02 EUR
37+1.96 EUR
40+1.79 EUR
Mindestbestellmenge: 33
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IPP80N06S2H5AKSA2 IPx80N06S2-H5.pdf
IPP80N06S2H5AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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BCR555E6327HTSA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Case: SOT23
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Produkt ist nicht verfügbar
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CY62148EV30LL-45ZSXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
Produkt ist nicht verfügbar
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CY62148G-45ZSXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62148G30-45ZSXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 45ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
Produkt ist nicht verfügbar
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CY7C109D-10ZXI description download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; TSOP32; parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32
Produkt ist nicht verfügbar
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CY7C109D-10ZXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 10ns; TSOP32; parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Access time: 10ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 1Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32
Produkt ist nicht verfügbar
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1EDC40I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC40I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Produkt ist nicht verfügbar
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IPD053N08N3GATMA1 Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.03 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PVI1050NSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0B4CC175DA1EC&compId=pvin.pdf?ci_sign=a3aca8335bf6d9d460b8a7a1ccdacbbc0ac5365d
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Manufacturer series: PVI-NPbF
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - Unclassified
Description: PVI1050NSPBFHLLA1
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.89 EUR
Mindestbestellmenge: 50
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ISC045N03L5SATMA1 Infineon-ISC045N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c2360e098e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.23 EUR
Mindestbestellmenge: 5000
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IR2108STRPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.35A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.87 EUR
Mindestbestellmenge: 2500
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IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4229PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
22+3.39 EUR
23+3.2 EUR
Mindestbestellmenge: 21
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IRFH8324TRPBF pVersion=0046&contRep=ZT&docId=E221BA57A0ED33F1A303005056AB0C4F&compId=irfh8324pbf.pdf?ci_sign=26d32e2604be70d7c6e34605b726e6dcdfb8b499
IRFH8324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 23A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
Produkt ist nicht verfügbar
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IRFH5020TRPBF pVersion=0046&contRep=ZT&docId=E221B53C7E3130F1A303005056AB0C4F&compId=irfh5020pbf.pdf?ci_sign=e3f6da846d9a1b0b329282270b8330e634586bda
IRFH5020TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5007TRPBF pVersion=0046&contRep=ZT&docId=E221B4D3372896F1A303005056AB0C4F&compId=irfh5007pbf.pdf?ci_sign=3fe673522330afbe95ed07a0de695f2cb1c0d729
IRFH5007TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8316TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC9D730DB15EA&compId=IRFH8316TRPBF.pdf?ci_sign=0c6c58ad69febc9212f942304eab104b62140e16
IRFH8316TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFHM8329TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCD1B98B2BF5EA&compId=IRFHM8329TRPBF.pdf?ci_sign=beb2593dcf1d1cccb9082c5760a87532530f3112
IRFHM8329TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.6W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5025TRPBF pVersion=0046&contRep=ZT&docId=E221B55AF29459F1A303005056AB0C4F&compId=irfh5025pbf.pdf?ci_sign=f8c3624dd2c5c91b4633ec75c6e262d12a931b98
IRFH5025TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5215TRPBF pVersion=0046&contRep=ZT&docId=E221B665D24C3DF1A303005056AB0C4F&compId=irfh5215pbf.pdf?ci_sign=700a7ad6fc2e7d49a82f6b799e9ffda69ebdb8f7
IRFH5215TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8325TRPBF pVersion=0046&contRep=ZT&docId=E221BA7452A666F1A303005056AB0C4F&compId=irfh8325pbf.pdf?ci_sign=a76385c090eb515f3739add9718f7fb10d861c99
IRFH8325TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.6W
Produkt ist nicht verfügbar
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IRFH4210DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08D6AECB1E1EC&compId=irfh4210dpbf.pdf?ci_sign=674e3ff244880f6b4d370c542d09e3bdc285aa38
IRFH4210DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH4251DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F0539B895741EC&compId=irfh4251dpbf.pdf?ci_sign=63d09c69c166cecc2695697a1e2de70eccbb9707
IRFH4251DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
Produkt ist nicht verfügbar
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IRFH5053TRPBF pVersion=0046&contRep=ZT&docId=E221B576FB1211F1A303005056AB0C4F&compId=irfh5053pbf.pdf?ci_sign=1773d09d6a2e0b2ee77dc3e70632d16bcd007a3c
IRFH5053TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5210TRPBF pVersion=0046&contRep=ZT&docId=E221B649F97DB5F1A303005056AB0C4F&compId=irfh5210pbf.pdf?ci_sign=0763deda32b5a1f8a5ae797c05cb601f0f7fac4d
IRFH5210TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH6200TRPBF pVersion=0046&contRep=ZT&docId=E221B9747C2264F1A303005056AB0C4F&compId=irfh6200pbf.pdf?ci_sign=62fd898ae5f059ad6aae7ce81c47a4d0a9e78a88
IRFH6200TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7004TRPBF irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
Produkt ist nicht verfügbar
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IRFH7446TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBD1BEE22B5EA&compId=IRFH7446TRPBF.pdf?ci_sign=4a86436a2113e98a4301b774eaf05a469c467d4a
IRFH7446TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 3.3mΩ
Gate charge: 65nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFH7545TRPBF irfh7545pbf.pdf?fileId=5546d462533600a40153561f1e511ef1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
Produkt ist nicht verfügbar
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IRFH7921TRPBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284B17F1A6F5005056AB5A8F&compId=irfh7921pbf.pdf?ci_sign=265cab4cc1e9d070052d55d43365b805b7b78dd0
IRFH7921TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH7934TRPBF pVersion=0046&contRep=ZT&docId=E221B9FC0F64AAF1A303005056AB0C4F&compId=irfh7934pbf.pdf?ci_sign=aeb4f9409c7cb3a83f718ce7a2c9661c84405b3e
IRFH7934TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8201TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBF9D0E9E15EA&compId=IRFH8201TRPBF.pdf?ci_sign=0fd357ad7988b3c8101109a2a30ddda219854d09
IRFH8201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8311TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC7D71B7C55EA&compId=IRFH8311TRPBF.pdf?ci_sign=c6589ae941f40c6caeca3dd2cb522256801f38f7
IRFH8311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH8321TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCCBDA836655EA&compId=IRFH8321TRPBF.pdf?ci_sign=8af00b2029e222c13b14e3ae39a6c3a7baa0f4ae
IRFH8321TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Mounting: SMD
Kind of package: reel
Drain current: 21A
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Case: PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Power dissipation: 3.4W
Produkt ist nicht verfügbar
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IGCM04F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACB0509D4193D7&compId=IGCM04F60GA.pdf?ci_sign=806d21c01c2492d6102a8d9f29b6a2bea7793a7b
IGCM04F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.53 EUR
7+10.51 EUR
Mindestbestellmenge: 5
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BTF3080EJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF76602B68740C4&compId=BTF3080EJ.pdf?ci_sign=4917fbb88a9b9364cdde55b74718b3188d1ca5f3
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Case: PG-TDSO-8-31
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-on time: 1.35µs
Turn-off time: 2µs
On-state resistance: 71mΩ
Type of integrated circuit: power switch
Number of channels: 1
Power dissipation: 1.44W
Output current: 3A
Supply voltage: 3...5.5V DC
Kind of output: N-Channel
Output voltage: 40V
Kind of integrated circuit: low-side
Technology: HITFET®
Produkt ist nicht verfügbar
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IRFP4768PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d
IRFP4768PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP320N20N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC84EE95CCE11C&compId=IPP320N20N3G-DTE.pdf?ci_sign=6226e0663d65b677fe140d569ad33b01df4f9379
IPP320N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.42 EUR
19+3.9 EUR
22+3.37 EUR
23+3.2 EUR
Mindestbestellmenge: 17
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IPA320N20NM3SXKSA1 Infineon-IPA320N20NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d1035e86e3a
IPA320N20NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Drain-source voltage: 200V
Drain current: 19A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 104A
Produkt ist nicht verfügbar
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IPI320N20N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC2B3EB5CC011C&compId=IPI320N20N3G-DTE.pdf?ci_sign=e0d429a5c98a4128004ad9b804e367269248b1b5
IPI320N20N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BCR108E6433HTMA1 bcr108series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a27e5a401ce
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; SC59; R1: 2.2kΩ; R2: 47kΩ
Application: automotive industry
Polarisation: bipolar
Case: SC59
Mounting: SMD
Type of transistor: NPN
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.044 EUR
Mindestbestellmenge: 10000
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IRFB3806PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6F7F1A6F5005056AB5A8F&compId=irfs3806pbf.pdf?ci_sign=001141132864e0f86f836b25cf437c6712ebd811
IRFB3806PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
60+1.21 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 41
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BSP62H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 22000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.21 EUR
Mindestbestellmenge: 1000
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BGA616H6327XTSA1 BGA616_Rev2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.92 EUR
Mindestbestellmenge: 3000
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IPP200N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC83BDC316811C&compId=IPP200N15N3G-DTE.pdf?ci_sign=38cb5325374ca3da97dcbd9df290e4f9562e6e8f
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
27+2.69 EUR
28+2.6 EUR
29+2.55 EUR
30+2.45 EUR
Mindestbestellmenge: 24
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.53 EUR
120+4.08 EUR
Mindestbestellmenge: 30
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IPP200N25N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8807E583411C&compId=IPP200N25N3G-DTE.pdf?ci_sign=84a757fa8ec3825091407ee834af2c50c992735c
IPP200N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IRS2104STRPBF irs2104.pdf?fileId=5546d462533600a40153567633f727a1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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