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BBY5302VH6327XTSA1 INFINEON TECHNOLOGIES INFNS15715-1.pdf?t.download=true&u=5oefqw Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Load current: 20mA
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 6V
Case: SC79
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
49+1.47 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 35
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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IFX1050GVIO IFX1050GVIO INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FB39823315A259&compId=IFX1050GVIO.pdf?ci_sign=067fabe4fb859a1aad4c08bb9ad538b4b247d661 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...125°C
DC supply current: 70mA
Number of receivers: 1
Number of transmitters: 1
Supply voltage: 3...5.5V DC
Kind of package: reel; tape
Interface: CAN
Case: PG-DSO-8
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6EDL04I06PTXUMA1 INFINEON TECHNOLOGIES 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Case: PG-DSO-28
Output current: -0.375...0.24A
Supply voltage: 13...17.5V
Mounting: SMD
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Voltage class: 600V
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TC387QP160F300SAEKXUMA2 INFINEON TECHNOLOGIES Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Category: Unclassified
Description: TC387QP160F300SAEKXUMA2
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1000+60.57 EUR
Mindestbestellmenge: 1000
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BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7DD62C61DB10B&compId=BSS225H6327FTSA1.pdf?ci_sign=d1dd1bf6451e98d1f321df5d8a294dd402ce6bc6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 522 Stücke:
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122+0.59 EUR
138+0.52 EUR
145+0.49 EUR
209+0.34 EUR
221+0.32 EUR
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BSS119NH6327XTSA1 BSS119NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A792634BB8910B&compId=BSS119NH6327XTSA1.pdf?ci_sign=a5f53f11c07260c48f5cedd73fc0842250fc0053 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
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218+0.33 EUR
281+0.25 EUR
332+0.22 EUR
506+0.14 EUR
603+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 218
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IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE5BB2BC3FF3D1&compId=IPN80R4K5P7.pdf?ci_sign=181b854c7a65f95ea9d97b62a47f753309e2776a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2097 Stücke:
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82+0.87 EUR
99+0.72 EUR
111+0.65 EUR
123+0.58 EUR
130+0.55 EUR
Mindestbestellmenge: 82
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDA2691FCDB3D1&compId=IPN80R3K3P7.pdf?ci_sign=cb7c353b6e773d711c2d3bf644455832fa1bcb8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDB6243C3F13D1&compId=IPN80R2K4P7.pdf?ci_sign=fc60aaeba15bb57be6f1214d4477212da724015e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDE5E5617E13D1&compId=IPN80R750P7.pdf?ci_sign=9a67d757292591395f7dbeffbc47c891b90039e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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XMC1100T038X0064ABXUMA1 XMC1100T038X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
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XMC1100Q024F0064ABXUMA1 XMC1100Q024F0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T038F0016ABXUMA1 XMC1100T038F0016ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T038F0032ABXUMA1 XMC1100T038F0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100Q024F0016ABXUMA1 XMC1100Q024F0016ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T016F0008ABXUMA1 XMC1100T016F0008ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100Q024F0008ABXUMA1 XMC1100Q024F0008ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Case: PG-VQFN-24
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100Q040F0064ABXUMA1 XMC1100Q040F0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T016F0016ABXUMA1 XMC1100T016F0016ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T016F0032ABXUMA1 XMC1100T016F0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T016F0064ABXUMA1 XMC1100T016F0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
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XMC1100T016X0032ABXUMA1 XMC1100T016X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 XMC1100T016X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Produkt ist nicht verfügbar
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA912F8CFA5C11CC&compId=BSD223PH6327XTSA1-DTE.pdf?ci_sign=7da60d03f8b4e52d7093e7914fc63ed040d189c3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
404+0.18 EUR
477+0.15 EUR
511+0.14 EUR
658+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 179
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913A60E70031CC&compId=BSL307SPH6327XTSA1-DTE.pdf?ci_sign=2d3b12b41a36cdb437bb34b01f41939f35a02b37 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
auf Bestellung 1691 Stücke:
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136+0.53 EUR
178+0.4 EUR
327+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 93
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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95+0.76 EUR
158+0.45 EUR
169+0.42 EUR
180+0.4 EUR
186+0.38 EUR
Mindestbestellmenge: 95
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BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D01CD314510B&compId=BSD214SNH6327XTSA1.pdf?ci_sign=e140dc0bc8f7dd5d6a5e9b2c21760d382e9e0564 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Kind of channel: enhancement
Case: SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PVDZ172NSPBF INFINEON TECHNOLOGIES pvdz172.pdf?fileId=5546d462533600a401535683ba592934 description Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
50+9.14 EUR
Mindestbestellmenge: 50
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 99 Stücke:
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39+1.87 EUR
87+0.83 EUR
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC97987B2DB3D1&compId=IPAN70R360P7S.pdf?ci_sign=446f33d5ce1d514e84e92d4725288808af0d1e4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 346 Stücke:
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36+1.99 EUR
40+1.83 EUR
48+1.52 EUR
71+1.02 EUR
74+0.97 EUR
100+0.93 EUR
Mindestbestellmenge: 36
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA4AC57BCA0143&compId=IPN70R360P7S.pdf?ci_sign=5821d17ce2d7c8fad36de387f6604f90da9e4af3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB41888EDB0143&compId=IPS70R360P7S.pdf?ci_sign=7e11cc65c221ebcf878ecdb01d4217297052c125 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 264A
Mounting: THT
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5433F95CF8BF&compId=IAUT150N10S5N035.pdf?ci_sign=6a528e190c175351cabbebf2a2a8afeaca2b9413 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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BSP171PL6327 BSP171PL6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0474584F02CF1A6F5005056AB5A8F&compId=BSP171PL6327-Infineon.pdf?ci_sign=6587f20be49b313554fe5477ac1761805f46a096 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC857BWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 220
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99F8F72510A631820&compId=BFR360F.pdf?ci_sign=955a698304c55f02743f69b465e23cb5e9380402 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
275+0.26 EUR
397+0.18 EUR
463+0.15 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 167
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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
253+0.28 EUR
285+0.25 EUR
329+0.22 EUR
363+0.2 EUR
394+0.18 EUR
443+0.16 EUR
468+0.15 EUR
Mindestbestellmenge: 200
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A64F3AE83B110B&compId=BSL606SNH6327XTSA1.pdf?ci_sign=ff3e05d9020426993f44e3de18cad12bcdd9a49e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 95mΩ
Drain current: 4.5A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
122+0.59 EUR
136+0.53 EUR
178+0.4 EUR
247+0.29 EUR
261+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 103
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BBY6602VH6327XTSA1 INFINEON TECHNOLOGIES bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400 Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Load current: 50mA
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 12V
Case: SC79
Produkt ist nicht verfügbar
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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IRS21271STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDB7506BDC0DA0DC&compId=IRS212XXSTRPBf.pdf?ci_sign=e616bf26360d656e90e728b62df1e0f3df09dc73 Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.46 EUR
Mindestbestellmenge: 2500
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BSZ070N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.68 EUR
Mindestbestellmenge: 5000
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
589+0.12 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 385
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DF4896A411CC&compId=SPP15P10PLHXKSA1-DTE.pdf?ci_sign=ead7ae3ae2309c3e298e1a2cdb1971d8711f9449 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
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IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3020 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.31 EUR
Mindestbestellmenge: 300
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IPA60R060P7 IPA60R060P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1EDC125262749&compId=IPA60R060P7.pdf?ci_sign=cb246ca29be37a4051586f7d55d95def1bcf574f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BBY5302VH6327XTSA1 INFNS15715-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SC79; single diode; reel,tape
Load current: 20mA
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 6V
Case: SC79
Produkt ist nicht verfügbar
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IRF1310NPBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A8EF1A6F5005056AB5A8F&compId=irf1310n.pdf?ci_sign=f86653c14d07ebcb26335896999b26309cf65da1
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
49+1.47 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 35
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IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IFX1050GVIO pVersion=0046&contRep=ZT&docId=005056AB752F1ED780FB39823315A259&compId=IFX1050GVIO.pdf?ci_sign=067fabe4fb859a1aad4c08bb9ad538b4b247d661
IFX1050GVIO
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...125°C
DC supply current: 70mA
Number of receivers: 1
Number of transmitters: 1
Supply voltage: 3...5.5V DC
Kind of package: reel; tape
Interface: CAN
Case: PG-DSO-8
Produkt ist nicht verfügbar
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6EDL04I06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Case: PG-DSO-28
Output current: -0.375...0.24A
Supply voltage: 13...17.5V
Mounting: SMD
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Voltage class: 600V
Produkt ist nicht verfügbar
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TC387QP160F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: TC387QP160F300SAEKXUMA2
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+60.57 EUR
Mindestbestellmenge: 1000
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BSS225H6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7DD62C61DB10B&compId=BSS225H6327FTSA1.pdf?ci_sign=d1dd1bf6451e98d1f321df5d8a294dd402ce6bc6
BSS225H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
138+0.52 EUR
145+0.49 EUR
209+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 122
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BSS119NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A792634BB8910B&compId=BSS119NH6327XTSA1.pdf?ci_sign=a5f53f11c07260c48f5cedd73fc0842250fc0053
BSS119NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
281+0.25 EUR
332+0.22 EUR
506+0.14 EUR
603+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 218
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IPN80R4K5P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE5BB2BC3FF3D1&compId=IPN80R4K5P7.pdf?ci_sign=181b854c7a65f95ea9d97b62a47f753309e2776a
IPN80R4K5P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2097 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
99+0.72 EUR
111+0.65 EUR
123+0.58 EUR
130+0.55 EUR
Mindestbestellmenge: 82
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IPN80R3K3P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDA2691FCDB3D1&compId=IPN80R3K3P7.pdf?ci_sign=cb7c353b6e773d711c2d3bf644455832fa1bcb8a
IPN80R3K3P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDB6243C3F13D1&compId=IPN80R2K4P7.pdf?ci_sign=fc60aaeba15bb57be6f1214d4477212da724015e
IPN80R2K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R600P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada
IPN80R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDE5E5617E13D1&compId=IPN80R750P7.pdf?ci_sign=9a67d757292591395f7dbeffbc47c891b90039e1
IPN80R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a
IPI020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1100T038X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T038X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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XMC1100Q024F0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100Q024F0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1100
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100T038F0016ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T038F0016ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100T038F0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T038F0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100Q024F0016ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100Q024F0016ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1100
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100T016F0008ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016F0008ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1100
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100Q024F0008ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100Q024F0008ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 8kBFLASH,16kBSRAM; XMC1100
Case: PG-VQFN-24
Memory: 8kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100Q040F0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100Q040F0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1100
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1100T016F0016ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016F0016ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1100T016F0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016F0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1100T016F0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016F0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1100T016X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016X0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1100T016X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1100
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2907ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5
IRF2907ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSD223PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA912F8CFA5C11CC&compId=BSD223PH6327XTSA1-DTE.pdf?ci_sign=7da60d03f8b4e52d7093e7914fc63ed040d189c3
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
404+0.18 EUR
477+0.15 EUR
511+0.14 EUR
658+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BSL307SPH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913A60E70031CC&compId=BSL307SPH6327XTSA1-DTE.pdf?ci_sign=2d3b12b41a36cdb437bb34b01f41939f35a02b37
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
136+0.53 EUR
178+0.4 EUR
327+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
IRFL4105TRPBF pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
158+0.45 EUR
169+0.42 EUR
180+0.4 EUR
186+0.38 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
BSD214SNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D01CD314510B&compId=BSD214SNH6327XTSA1.pdf?ci_sign=e140dc0bc8f7dd5d6a5e9b2c21760d382e9e0564
BSD214SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Kind of channel: enhancement
Case: SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVDZ172NSPBF description pvdz172.pdf?fileId=5546d462533600a401535683ba592934
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+9.14 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
87+0.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC97987B2DB3D1&compId=IPAN70R360P7S.pdf?ci_sign=446f33d5ce1d514e84e92d4725288808af0d1e4f
IPAN70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.83 EUR
48+1.52 EUR
71+1.02 EUR
74+0.97 EUR
100+0.93 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R360P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA4AC57BCA0143&compId=IPN70R360P7S.pdf?ci_sign=5821d17ce2d7c8fad36de387f6604f90da9e4af3
IPN70R360P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS70R360P7SAKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB41888EDB0143&compId=IPS70R360P7S.pdf?ci_sign=7e11cc65c221ebcf878ecdb01d4217297052c125
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 264A
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT150N10S5N035ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5433F95CF8BF&compId=IAUT150N10S5N035.pdf?ci_sign=6a528e190c175351cabbebf2a2a8afeaca2b9413
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS02GTDPBHB053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS02GTDPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP171PL6327 pVersion=0046&contRep=ZT&docId=E1C0474584F02CF1A6F5005056AB5A8F&compId=BSP171PL6327-Infineon.pdf?ci_sign=6587f20be49b313554fe5477ac1761805f46a096
BSP171PL6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC857BWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 220
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BFR360FH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99F8F72510A631820&compId=BFR360F.pdf?ci_sign=955a698304c55f02743f69b465e23cb5e9380402
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Kind of transistor: RF
Case: TSFP-3
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.21W
Collector-emitter voltage: 6V
Frequency: 14GHz
Current gain: 90...160
Polarisation: bipolar
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
275+0.26 EUR
397+0.18 EUR
463+0.15 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
285+0.25 EUR
329+0.22 EUR
363+0.2 EUR
394+0.18 EUR
443+0.16 EUR
468+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A64F3AE83B110B&compId=BSL606SNH6327XTSA1.pdf?ci_sign=ff3e05d9020426993f44e3de18cad12bcdd9a49e
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2W
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 95mΩ
Drain current: 4.5A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
122+0.59 EUR
136+0.53 EUR
178+0.4 EUR
247+0.29 EUR
261+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 103
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BBY6602VH6327XTSA1 bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Load current: 50mA
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 12V
Case: SC79
Produkt ist nicht verfügbar
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IRF7465TRPBF pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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IRS21271STRPBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDB7506BDC0DA0DC&compId=IRS212XXSTRPBf.pdf?ci_sign=e616bf26360d656e90e728b62df1e0f3df09dc73
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.46 EUR
Mindestbestellmenge: 2500
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
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BCR135SH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
589+0.12 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BCR135WH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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SPP15P10PLHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DF4896A411CC&compId=SPP15P10PLHXKSA1-DTE.pdf?ci_sign=ead7ae3ae2309c3e298e1a2cdb1971d8711f9449
SPP15P10PLHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.31 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R060P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1EDC125262749&compId=IPA60R060P7.pdf?ci_sign=cb246ca29be37a4051586f7d55d95def1bcf574f
IPA60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R060P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207
IPZA60R060P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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