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IPB60R190C6ATMA1 IPB60R190C6ATMA1 INFINEON TECHNOLOGIES IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
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IPD11DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
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2500+0.82 EUR
Mindestbestellmenge: 2500
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IPB025N08N3GATMA1 IPB025N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAA59F3947C11C&compId=IPB025N08N3G-DTE.pdf?ci_sign=8fa71a09cbfa56d2c67c569dea1eabef298c8f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 2.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 300W
Drain current: 120A
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IRF6645TRPBF IRF6645TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D4F04E802F1A303005056AB0C4F&compId=irf6645pbf.pdf?ci_sign=b9722bf4f481f3c294902eb315726445e6f9e24d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
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IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
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TLE72762DATMA1 INFINEON TECHNOLOGIES Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08 Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.83 EUR
Mindestbestellmenge: 2500
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IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Drain-source voltage: 150V
Drain current: 28A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
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AUIPS7111STRL INFINEON TECHNOLOGIES auips7111s.pdf?fileId=5546d462533600a4015355a7c94e1326 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Kind of package: reel
Operating temperature: -40...150°C
Kind of integrated circuit: high-side
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2.5W
Technology: Classic PROFET
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D74DA0751DF1A303005056AB0C4F&compId=irg4psh71kdpbf.pdf?ci_sign=807edbea8fc791bb19fa6f5771a90dff64a7fca4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Case: SUPER247
Mounting: THT
Kind of package: tube
Collector current: 78A
Type of transistor: IGBT
Power dissipation: 350W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
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BCR523E6327HTSA1 BCR523E6327HTSA1 INFINEON TECHNOLOGIES bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 50V
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BCR523E6433HTMA1 BCR523E6433HTMA1 INFINEON TECHNOLOGIES bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 50V
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE85CFC84EE469&compId=TT400N26KOF.pdf?ci_sign=7618a9f3e9ecd7b2b2499692417e87ef1ce64cab Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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CY7C1380KV33-167AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1380KV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 209A
Drain-source voltage: 40V
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IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF6613TRPBF IRF6613TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF6646TRPBF IRF6646TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D6F02B060F1A303005056AB0C4F&compId=irf6646pbf.pdf?ci_sign=83a194730ab9f4171c6af53e4a964c5c99aadec6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF6668TRPBF IRF6668TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6E04AA9E5EF1A303005056AB0C4F&compId=irf6668pbf.pdf?ci_sign=3d071b1127b1dfff4ca1aec60de8486f5a4ff2d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF7739L1TRPBF IRF7739L1TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8A397ACBB5EA&compId=IRF7739L1TRPBF.pdf?ci_sign=42f6f850806d5dbb3ce2d0cdd11430ea04a209f9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
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AUIRF7647S2TR AUIRF7647S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D748EF1A6F5005056AB5A8F&compId=auirf7647s2.pdf?ci_sign=a5ade660db264cb9e00cb8ccb2dffd04e4723d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
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AUIRF7648M2TR AUIRF7648M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
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AUIRF7669L2TR AUIRF7669L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74B8F1A6F5005056AB5A8F&compId=auirf7669l2.pdf?ci_sign=dbff2b847d938d04165ecc80e0288b271c038e6f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
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AUIRF7675M2TR AUIRF7675M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74C6F1A6F5005056AB5A8F&compId=auirf7675m2.pdf?ci_sign=6f2fdedd9b7a7dd5fc79b040865f7cc6be687d64 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 45W
Technology: HEXFET®
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AUIRF7736M2TR AUIRF7736M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74D4F1A6F5005056AB5A8F&compId=auirf7736m2.pdf?ci_sign=b40706946f99bbe0e7b0512c740cc99a0530a4b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
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AUIRF7737L2TR AUIRF7737L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74E2F1A6F5005056AB5A8F&compId=auirf7737l2.pdf?ci_sign=988a0605716b6ae68df67a927a25574adeb3e3ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 83W
Technology: HEXFET®
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AUIRF7739L2TR AUIRF7739L2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74FEF1A6F5005056AB5A8F&compId=auirf7739l2.pdf?ci_sign=763f17a5c4d0c90cf8f3a4c554ade81af3e0c685 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
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AUIRL7732S2TR AUIRL7732S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B793EF1A6F5005056AB5A8F&compId=auirl7732s2.pdf?ci_sign=ddf47b1ea64ae3b106eec640a657904cc40ff659 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Features of semiconductor devices: logic level
Technology: HEXFET®
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AUIRL7736M2TR AUIRL7736M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B794CF1A6F5005056AB5A8F&compId=auirl7736m2.pdf?ci_sign=396d2e157a61a6f71b207c711048dbabfc61ef07 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Features of semiconductor devices: logic level
Technology: HEXFET®
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IRF6617TRPBF IRF6617TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68F6F3C254F1A303005056AB0C4F&compId=irf6617pbf.pdf?ci_sign=8194306b9a0254a0290e1c6c85b89e2daced3d6d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
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IRF6623TRPBF IRF6623TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F69BF922773F1A303005056AB0C4F&compId=irf6623pbf.pdf?ci_sign=7e47b28080f5bc09af2f5dfabdcf15cbcfcda1b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
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IRF6674TRPBF IRF6674TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6E21611C47F1A303005056AB0C4F&compId=irf6674pbf.pdf?ci_sign=6f30856429dd849e725522aa6baeff678ecc5240 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF6715MTRPBF IRF6715MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7007E134E9F1A303005056AB0C4F&compId=irf6715mpbf.pdf?ci_sign=62374627c1017a1a9ad461228f8c75cd0c4ca3e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
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IRF6716MTRPBF IRF6716MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7021DF830BF1A303005056AB0C4F&compId=irf6716mpbf.pdf?ci_sign=169aef872d10aacc80aeb938269d641f989a2ef6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6785MTRPBF IRF6785MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F721B77381DF1A303005056AB0C4F&compId=irf6785mpbf.pdf?ci_sign=9ead012a52e6c003d2cb3151b6ca9ff5aeb45017 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 57W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6795MTRPBF IRF6795MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F723885ED80F1A303005056AB0C4F&compId=irf6795mpbf.pdf?ci_sign=9d49a0948566a3df84490265ddb6219a15d0ce6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 75W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6811STRPBF IRF6811STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7282E16378F1A303005056AB0C4F&compId=irf6811spbf.pdf?ci_sign=579b5a75859bdda2e370556044bd3504e41a20aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 32W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6894MTRPBF IRF6894MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72A548A092F1A303005056AB0C4F&compId=irf6894mpbf.pdf?ci_sign=eb0a6907cd34648584abc41f075c9b9488986d39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6898MTRPBF IRF6898MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F72C0D51813F1A303005056AB0C4F&compId=irf6898mpbf.pdf?ci_sign=2cf3ed416c9acdf1e84616972f31edd8f6034727 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L2TRPBF IRF7739L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A96E6489E7F1A303005056AB0C4F&compId=irf7739l2pbf.pdf?ci_sign=296feb793da6921ebca5ab264bdfe2983eb7f134 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7749L2TRPBF IRF7749L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7769L2TRPBF IRF7769L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA53F02E47F1A303005056AB0C4F&compId=irf7769l2pbf.pdf?ci_sign=5cd3eeb2ac76d76da1ad88b7a602e610094c74ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7779L2TRPBF IRF7779L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA743EF966F1A303005056AB0C4F&compId=irf7779l2pbf.pdf?ci_sign=a411caebdb5e453bbb838d0678c14cccf71cf252 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7946TRPBF IRF7946TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC97E68E7355EA&compId=IRF7946TRPBF.pdf?ci_sign=ac36c1ec84c1dbd734ca4b3ef349040e5869064e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6644TRPBF IRF6644TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D3B6A2145F1A303005056AB0C4F&compId=irf6644pbf.pdf?ci_sign=9a8b55e72d72f093e7b297faca648d6d18f6ad2d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7665S2TR AUIRF7665S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D74AAF1A6F5005056AB5A8F&compId=auirf7665s2.pdf?ci_sign=2dfdc926c8068713a22a7ec5c3a3577b51d331dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRL7766M2TR AUIRL7766M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6641TRPBF IRF6641TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6CFED008FEF1A303005056AB0C4F&compId=irf6641pbf.pdf?ci_sign=3e43d1a3b768edd2c9fe2c68790af0399ca0d64e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSS315PH6327XTSA1 BSS315PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928B72959EF1CC&compId=BSS315PH6327XTSA1-dte.pdf?ci_sign=3b9e4079beb04d77d42e57113c3843de47ba2f65 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P2
Kind of channel: enhancement
auf Bestellung 6090 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
188+0.38 EUR
217+0.33 EUR
382+0.19 EUR
770+0.093 EUR
820+0.087 EUR
6000+0.084 EUR
Mindestbestellmenge: 157
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BSR315PH6327XTSA1 BSR315PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB57E0F870745&compId=BSR315PH6327XTSA1.pdf?ci_sign=ae348073efcde58782a96f46a5f058d78900eb40 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
179+0.4 EUR
221+0.32 EUR
341+0.21 EUR
360+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 125
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IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA7C28BC1011C&compId=IPP12CN10LG-DTE.pdf?ci_sign=186f239583b306e8635800d8e91c452777c32313 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 69A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSP742T BSP742T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869766A91DFD2469&compId=BSP742T.pdf?ci_sign=e6e8ebf8ffc3284c7138eee105ccea59d6a3f9de Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Output voltage: 40V
Technology: Classic PROFET
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
35+2.09 EUR
50+1.43 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 23
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IRFU3910PBF IRFU3910PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E7D50556AF1A6F5005056AB5A8F&compId=irfr3910.pdf?ci_sign=32484d6b1a839ea92321d7025cc437922f8ea437 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Case: IPAK
Mounting: THT
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 29.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 103
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IAUA210N10S5N024AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ICE5QR0680AZXKLA1
+2
 		ICE5QR0680AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.8A; 20kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Operating temperature: -40...150°C
Case: DIP7
Power: 74/41W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 800V
Output current: 1.8A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.68 EUR
18+4.2 EUR
23+3.23 EUR
24+3.05 EUR
Mindestbestellmenge: 16
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ICE5QR4770AZXKLA1
+1
 		ICE5QR4770AZXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 140mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating temperature: -40...150°C
Case: DIP7
Power: 27/15W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 700V
Output current: 140mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
50+1.43 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 33
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IM393M6FXKLA1 IM393M6FXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Operating temperature: -40...125°C
Case: SIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 10A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IM393L6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Operating temperature: -40...125°C
Case: DIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 15A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IM393X6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Operating temperature: -40...125°C
Case: DIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 20A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IM393M6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Operating temperature: -40...125°C
Case: DIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 10A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IPB60R190C6ATMA1 IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a
IPB60R190C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD11DP10NMATMA1 Infineon-IPD11DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddc895e91a40
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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IPB025N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAA59F3947C11C&compId=IPB025N08N3G-DTE.pdf?ci_sign=8fa71a09cbfa56d2c67c569dea1eabef298c8f67
IPB025N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 2.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 300W
Drain current: 120A
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IRF6645TRPBF pVersion=0046&contRep=ZT&docId=E21F6D4F04E802F1A303005056AB0C4F&compId=irf6645pbf.pdf?ci_sign=b9722bf4f481f3c294902eb315726445e6f9e24d
IRF6645TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
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IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
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TLE72762DATMA1 Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.83 EUR
Mindestbestellmenge: 2500
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IRF6775MTRPBF pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83
IRF6775MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Drain-source voltage: 150V
Drain current: 28A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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AUIPS7111STRL auips7111s.pdf?fileId=5546d462533600a4015355a7c94e1326
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Kind of package: reel
Operating temperature: -40...150°C
Kind of integrated circuit: high-side
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2.5W
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF pVersion=0046&contRep=ZT&docId=E221D74DA0751DF1A303005056AB0C4F&compId=irg4psh71kdpbf.pdf?ci_sign=807edbea8fc791bb19fa6f5771a90dff64a7fca4
IRG4PSH71KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Case: SUPER247
Mounting: THT
Kind of package: tube
Collector current: 78A
Type of transistor: IGBT
Power dissipation: 350W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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BCR523E6327HTSA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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BCR523E6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523E6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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TT400N26KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE85CFC84EE469&compId=TT400N26KOF.pdf?ci_sign=7618a9f3e9ecd7b2b2499692417e87ef1ce64cab
TT400N26KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY7C1380KV33-167AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1380KV33-167AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 209A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
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IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF6613TRPBF pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04
IRF6613TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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IRF6646TRPBF pVersion=0046&contRep=ZT&docId=E21F6D6F02B060F1A303005056AB0C4F&compId=irf6646pbf.pdf?ci_sign=83a194730ab9f4171c6af53e4a964c5c99aadec6
IRF6646TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6668TRPBF pVersion=0046&contRep=ZT&docId=E21F6E04AA9E5EF1A303005056AB0C4F&compId=irf6668pbf.pdf?ci_sign=3d071b1127b1dfff4ca1aec60de8486f5a4ff2d4
IRF6668TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L1TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC8A397ACBB5EA&compId=IRF7739L1TRPBF.pdf?ci_sign=42f6f850806d5dbb3ce2d0cdd11430ea04a209f9
IRF7739L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7647S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D748EF1A6F5005056AB5A8F&compId=auirf7647s2.pdf?ci_sign=a5ade660db264cb9e00cb8ccb2dffd04e4723d6b
AUIRF7647S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7648M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772
AUIRF7648M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7669L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74B8F1A6F5005056AB5A8F&compId=auirf7669l2.pdf?ci_sign=dbff2b847d938d04165ecc80e0288b271c038e6f
AUIRF7669L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 100W
Technology: HEXFET®
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AUIRF7675M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74C6F1A6F5005056AB5A8F&compId=auirf7675m2.pdf?ci_sign=6f2fdedd9b7a7dd5fc79b040865f7cc6be687d64
AUIRF7675M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 45W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7736M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74D4F1A6F5005056AB5A8F&compId=auirf7736m2.pdf?ci_sign=b40706946f99bbe0e7b0512c740cc99a0530a4b5
AUIRF7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 108A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7737L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74E2F1A6F5005056AB5A8F&compId=auirf7737l2.pdf?ci_sign=988a0605716b6ae68df67a927a25574adeb3e3ad
AUIRF7737L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 83W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7739L2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74FEF1A6F5005056AB5A8F&compId=auirf7739l2.pdf?ci_sign=763f17a5c4d0c90cf8f3a4c554ade81af3e0c685
AUIRF7739L2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRL7732S2TR pVersion=0046&contRep=ZT&docId=E1C045A07B793EF1A6F5005056AB5A8F&compId=auirl7732s2.pdf?ci_sign=ddf47b1ea64ae3b106eec640a657904cc40ff659
AUIRL7732S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 41W
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRL7736M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B794CF1A6F5005056AB5A8F&compId=auirl7736m2.pdf?ci_sign=396d2e157a61a6f71b207c711048dbabfc61ef07
AUIRL7736M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 63W
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6617TRPBF pVersion=0046&contRep=ZT&docId=E21F68F6F3C254F1A303005056AB0C4F&compId=irf6617pbf.pdf?ci_sign=8194306b9a0254a0290e1c6c85b89e2daced3d6d
IRF6617TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6623TRPBF pVersion=0046&contRep=ZT&docId=E21F69BF922773F1A303005056AB0C4F&compId=irf6623pbf.pdf?ci_sign=7e47b28080f5bc09af2f5dfabdcf15cbcfcda1b6
IRF6623TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 42W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6674TRPBF pVersion=0046&contRep=ZT&docId=E21F6E21611C47F1A303005056AB0C4F&compId=irf6674pbf.pdf?ci_sign=6f30856429dd849e725522aa6baeff678ecc5240
IRF6674TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6715MTRPBF pVersion=0046&contRep=ZT&docId=E21F7007E134E9F1A303005056AB0C4F&compId=irf6715mpbf.pdf?ci_sign=62374627c1017a1a9ad461228f8c75cd0c4ca3e2
IRF6715MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6716MTRPBF pVersion=0046&contRep=ZT&docId=E21F7021DF830BF1A303005056AB0C4F&compId=irf6716mpbf.pdf?ci_sign=169aef872d10aacc80aeb938269d641f989a2ef6
IRF6716MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6785MTRPBF pVersion=0046&contRep=ZT&docId=E21F721B77381DF1A303005056AB0C4F&compId=irf6785mpbf.pdf?ci_sign=9ead012a52e6c003d2cb3151b6ca9ff5aeb45017
IRF6785MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 57W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 57W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6795MTRPBF pVersion=0046&contRep=ZT&docId=E21F723885ED80F1A303005056AB0C4F&compId=irf6795mpbf.pdf?ci_sign=9d49a0948566a3df84490265ddb6219a15d0ce6b
IRF6795MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 160A; 75W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 160A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 75W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6811STRPBF pVersion=0046&contRep=ZT&docId=E21F7282E16378F1A303005056AB0C4F&compId=irf6811spbf.pdf?ci_sign=579b5a75859bdda2e370556044bd3504e41a20aa
IRF6811STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 74A; 32W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 74A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 32W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6894MTRPBF pVersion=0046&contRep=ZT&docId=E21F72A548A092F1A303005056AB0C4F&compId=irf6894mpbf.pdf?ci_sign=eb0a6907cd34648584abc41f075c9b9488986d39
IRF6894MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 170A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 54W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6898MTRPBF pVersion=0046&contRep=ZT&docId=E21F72C0D51813F1A303005056AB0C4F&compId=irf6898mpbf.pdf?ci_sign=2cf3ed416c9acdf1e84616972f31edd8f6034727
IRF6898MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 213A; 78W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 213A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 78W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7739L2TRPBF pVersion=0046&contRep=ZT&docId=E221A96E6489E7F1A303005056AB0C4F&compId=irf7739l2pbf.pdf?ci_sign=296feb793da6921ebca5ab264bdfe2983eb7f134
IRF7739L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7749L2TRPBF pVersion=0046&contRep=ZT&docId=E221A98A20BC1FF1A303005056AB0C4F&compId=irf7749l2pbf.pdf?ci_sign=b464ed5cc7d209a4bc1050ee64b1542e1151909c
IRF7749L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7769L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA53F02E47F1A303005056AB0C4F&compId=irf7769l2pbf.pdf?ci_sign=5cd3eeb2ac76d76da1ad88b7a602e610094c74ab
IRF7769L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7779L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA743EF966F1A303005056AB0C4F&compId=irf7779l2pbf.pdf?ci_sign=a411caebdb5e453bbb838d0678c14cccf71cf252
IRF7779L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 67A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7946TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC97E68E7355EA&compId=IRF7946TRPBF.pdf?ci_sign=ac36c1ec84c1dbd734ca4b3ef349040e5869064e
IRF7946TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 198A; 96W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 198A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 96W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6644TRPBF pVersion=0046&contRep=ZT&docId=E21F6D3B6A2145F1A303005056AB0C4F&compId=irf6644pbf.pdf?ci_sign=9a8b55e72d72f093e7b297faca648d6d18f6ad2d
IRF6644TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRF7665S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D74AAF1A6F5005056AB5A8F&compId=auirf7665s2.pdf?ci_sign=2dfdc926c8068713a22a7ec5c3a3577b51d331dc
AUIRF7665S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRL7766M2TR pVersion=0046&contRep=ZT&docId=E1C045A07B795AF1A6F5005056AB5A8F&compId=auirl7766m2.pdf?ci_sign=4c325d859c0e4ada8427c9bfb0a836e4c3900005
AUIRL7766M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 62.5W
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6641TRPBF pVersion=0046&contRep=ZT&docId=E21F6CFED008FEF1A303005056AB0C4F&compId=irf6641pbf.pdf?ci_sign=3e43d1a3b768edd2c9fe2c68790af0399ca0d64e
IRF6641TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.6A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.6A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSS315PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928B72959EF1CC&compId=BSS315PH6327XTSA1-dte.pdf?ci_sign=3b9e4079beb04d77d42e57113c3843de47ba2f65
BSS315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Case: PG-SOT23
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P2
Kind of channel: enhancement
auf Bestellung 6090 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
188+0.38 EUR
217+0.33 EUR
382+0.19 EUR
770+0.093 EUR
820+0.087 EUR
6000+0.084 EUR
Mindestbestellmenge: 157
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BSR315PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB57E0F870745&compId=BSR315PH6327XTSA1.pdf?ci_sign=ae348073efcde58782a96f46a5f058d78900eb40
BSR315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
179+0.4 EUR
221+0.32 EUR
341+0.21 EUR
360+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 125
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IPP12CN10LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA7C28BC1011C&compId=IPP12CN10LG-DTE.pdf?ci_sign=186f239583b306e8635800d8e91c452777c32313
IPP12CN10LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 100V
Drain current: 69A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSP742T pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869766A91DFD2469&compId=BSP742T.pdf?ci_sign=e6e8ebf8ffc3284c7138eee105ccea59d6a3f9de
BSP742T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Output voltage: 40V
Technology: Classic PROFET
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
35+2.09 EUR
50+1.43 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 23
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IRFU3910PBF description pVersion=0046&contRep=ZT&docId=E1C04E7D50556AF1A6F5005056AB5A8F&compId=irfr3910.pdf?ci_sign=32484d6b1a839ea92321d7025cc437922f8ea437
IRFU3910PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Case: IPAK
Mounting: THT
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 29.3nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 103
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IAUA210N10S5N024AUMA1 Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ICE5QR0680AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR0680AZXKLA1
+2
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.8A; 20kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Operating temperature: -40...150°C
Case: DIP7
Power: 74/41W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 800V
Output current: 1.8A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
18+4.2 EUR
23+3.23 EUR
24+3.05 EUR
Mindestbestellmenge: 16
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ICE5QR4770AZXKLA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE99492CD9B7C85D8BF&compId=ICE5QRxxxxAx.pdf?ci_sign=396f75f590acef529cc8d5ba1e6e2424b54e0124
ICE5QR4770AZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 140mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating temperature: -40...150°C
Case: DIP7
Power: 27/15W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 700V
Output current: 140mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
50+1.43 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 33
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IM393M6FXKLA1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
IM393M6FXKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Operating temperature: -40...125°C
Case: SIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 10A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IM393L6EXKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Operating temperature: -40...125°C
Case: DIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 15A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IM393X6EXKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Operating temperature: -40...125°C
Case: DIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 20A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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IM393M6EXKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Operating temperature: -40...125°C
Case: DIP34x15
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Output current: 10A
Type of integrated circuit: driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Produkt ist nicht verfügbar
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