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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+233.66 EUR
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IRF200P222 IRF200P222 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5AA0FD11CAA18&compId=IRF200P222.pdf?ci_sign=d9afdb99cae98fec1b59ed6668faa1e90e91f9fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Mounting: THT
Case: TO247AC
Drain-source voltage: 200V
Drain current: 129A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 556W
Polarisation: unipolar
Kind of package: tube
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.8 EUR
9+8.09 EUR
Mindestbestellmenge: 7
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TT175N16SOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE4C3702B56469&compId=TT175N16SOF.pdf?ci_sign=9092da32edc1e05e534e9c541057fbf4b762559f Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 175A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 175A
Case: BG-PB34SB-1
Max. forward voltage: 1.8V
Max. forward impulse current: 5.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IRFS3004TRL7PP INFINEON TECHNOLOGIES irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH4234TRPBF IRFH4234TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08978C0BD61EC&compId=irfh4234pbf.pdf?ci_sign=95709b25779a1ca2b7065525af8bb5dc0ea0c9db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Trade name: FastIRFET
Drain-source voltage: 25V
Drain current: 22A
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
Mindestbestellmenge: 239
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IRLHM620TRPBF IRLHM620TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Drain-source voltage: 20V
Drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5300TRPBF IRFH5300TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6FA6CAF00F1A303005056AB0C4F&compId=irfh5300pbf.pdf?ci_sign=16877abd46adde0d05dd5636df9b1e140cef2b47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5302DTRPBF IRFH5302DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B7349604E7F1A303005056AB0C4F&compId=irfh5302dpbf.pdf?ci_sign=778d1e41cc6ae612b54c507919fb9ae33e6c8a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5302TRPBF IRFH5302TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B750AF2BF3F1A303005056AB0C4F&compId=irfh5302pbf.pdf?ci_sign=168686822e44708888b38f507989100363ce9544 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5304TRPBF IRFH5304TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B8DB432F7FF1A303005056AB0C4F&compId=irfh5304pbf.pdf?ci_sign=079e791adf6bc18ca27c2f430c26034f8cc54991 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1403Q048X0200AAXUMA1 XMC1403Q048X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Integrated circuit features: EEPROM emulation; RTC; watchdog
Produkt ist nicht verfügbar
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ICE5AR4780BZSXKLA1
+1
 		ICE5AR4780BZSXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F2AF8C00A50A18&compId=ICE5ARxxxxBZS.pdf?ci_sign=a62ab432ead4174929122b170c27ba0a6892bb00 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DA9E7E5A51CC&compId=SPD50P03LGBTMA1-DTE.pdf?ci_sign=a20986a621e71ec1c6f409668776e8d55dea2f8c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
On-state resistance: 7mΩ
Power dissipation: 150W
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
32+2.25 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 26
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IRFB4127PBF IRFB4127PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B721F1A6F5005056AB5A8F&compId=irfb4127pbf.pdf?ci_sign=ddafc47e6f7b0c1ae62e3c82167c1dd582ee261f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 39
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IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A69262455901EC&compId=irfs7537pbf.pdf?ci_sign=5f35c07031438beffb94243d453935f7d2efe081 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.63 EUR
36+1.99 EUR
43+1.69 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 28
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IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA56B08FDB5EA&compId=IRFB7430PBF.pdf?ci_sign=06bb1ab19637c4d745e3676bfe9c624f7cca507e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+3.02 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A99F1A6F5005056AB5A8F&compId=irfb5620pbf.pdf?ci_sign=dba5e26ac2c7961fde53bfdd1882c9038aa6ace9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
39+1.87 EUR
41+1.77 EUR
Mindestbestellmenge: 31
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 20
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
48+1.5 EUR
50+1.43 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 35
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IPA50R280CEXKSA2 IPA50R280CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDED9A02745B1CC&compId=IPA50R280CE-DTE.pdf?ci_sign=a066060a8e4fa79cb0804ec9d84befd498ce3cdc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 30.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
66+1.1 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 35
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IPA50R950CEXKSA2 IPA50R950CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDC265D9431CC&compId=IPA50R950CE-DTE.pdf?ci_sign=2024861169eaf55680772217cf6cf99de93e0ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Power dissipation: 25.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
113+0.63 EUR
Mindestbestellmenge: 95
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IPA50R250CPXKSA1 IPA50R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE91C89A0F71CC&compId=IPA50R250CP-DTE.pdf?ci_sign=0316e1852350f0edf6d6295d7a00b4c2acf40bde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 500V
Case: TO220FP
Kind of package: tube
auf Bestellung 194 Stücke:
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26+2.85 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 26
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IPA50R190CEXKSA2 IPA50R190CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDF08C2E171CC&compId=IPA50R190CE-DTE.pdf?ci_sign=e005fb1f8201a70c20ce97ed35abebd84cf20329 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA50R199CPXKSA1 IPA50R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE94F4F51651CC&compId=IPA50R199CP-DTE.pdf?ci_sign=454170940fbb00506e16056806a3aff41185a47b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R500CEXKSA2 IPA50R500CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDA485961D1CC&compId=IPA50R500CE-DTE.pdf?ci_sign=bebb744a20f727ec0b8f0c747fb2266d676ae43c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R399CPXKSA1 IPA50R399CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE8B1E4535F1CC&compId=IPA50R399CP-DTE.pdf?ci_sign=42760d96673f7b515b2b7d8fe7e964159cb01c2e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Power dissipation: 8.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R520CPXKSA1 IPA50R520CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE900DBF53D1CC&compId=IPA50R520CP-DTE.pdf?ci_sign=48b324500d98190fb60fd8261ca2a53504008c15 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R800CEXKSA2 IPA50R800CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE17E8DD7F1CC&compId=IPA50R800CE-DTE.pdf?ci_sign=e60562202a376529f147e9141e1e4c6bd962109d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB110N20N3LF IPB110N20N3LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8F45FEA3211C&compId=IPP110N20NA-DTE.pdf?ci_sign=70b94064ff7df98367394afbee4bceb42f627658 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB019N06L3GATMA1 IPB019N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
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IPB019N08N3G
+1
 		IPB019N08N3G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAB6DE35C77DE27&compId=IPB019N08N3G-DTE.pdf?ci_sign=07ce8f1173d501dc930f45ad7fa2fde175466987 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPB019N08N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 180A; 224W; TO263-7; SMT
Mounting: SMD
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 224W
Gate charge: 123nC
Case: TO263-7
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.55 EUR
Mindestbestellmenge: 1000
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE698C6F5A53D1&compId=IPN80R900P7.pdf?ci_sign=1cb3ac008409bbbe434f89ad91f7ebd4ca924304 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
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2ED300C17SROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Case: AG-EICE
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Application: for medium and high power application
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™; SiC
Topology: IGBT half-bridge
Voltage class: 1.7kV
Type of semiconductor module: gate driver board
Mounting: PCB
Operating temperature: -25...85°C
Produkt ist nicht verfügbar
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2ED300C17STROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Produkt ist nicht verfügbar
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IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 INFINEON TECHNOLOGIES Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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IPLU300N04S4R8XTMA1 INFINEON TECHNOLOGIES IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+4.28 EUR
Mindestbestellmenge: 2000
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698F4A16FDCE11C&compId=IPD025N06N-DTE.pdf?ci_sign=4dbecac78d95e03a4f1e5519dd4a358c3fbeeacd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1665 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
1115+0.064 EUR
1260+0.057 EUR
1455+0.049 EUR
1540+0.046 EUR
Mindestbestellmenge: 725
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
Mindestbestellmenge: 120
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IAUC60N04S6L030HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L045HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N031HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N044ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N050HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BCV62BE6327HTSA1 INFINEON TECHNOLOGIES bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230 Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
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F475R06W1E3BOMA1 INFINEON TECHNOLOGIES Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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BSC011N03LSATMA1 BSC011N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC011N03LSIATMA1 BSC011N03LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
84+0.86 EUR
98+0.74 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.39 EUR
Mindestbestellmenge: 65
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FF200R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70
FF200R17KE4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+233.66 EUR
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IRF200P222 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5AA0FD11CAA18&compId=IRF200P222.pdf?ci_sign=d9afdb99cae98fec1b59ed6668faa1e90e91f9fe
IRF200P222
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Mounting: THT
Case: TO247AC
Drain-source voltage: 200V
Drain current: 129A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 556W
Polarisation: unipolar
Kind of package: tube
Gate charge: 203nC
Technology: StrongIRFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.8 EUR
9+8.09 EUR
Mindestbestellmenge: 7
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TT175N16SOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE4C3702B56469&compId=TT175N16SOF.pdf?ci_sign=9092da32edc1e05e534e9c541057fbf4b762559f
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 175A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 175A
Case: BG-PB34SB-1
Max. forward voltage: 1.8V
Max. forward impulse current: 5.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFS3004TRL7PP irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH4234TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08978C0BD61EC&compId=irfh4234pbf.pdf?ci_sign=95709b25779a1ca2b7065525af8bb5dc0ea0c9db
IRFH4234TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Trade name: FastIRFET
Drain-source voltage: 25V
Drain current: 22A
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
Mindestbestellmenge: 239
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IRLHM620TRPBF pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02
IRLHM620TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Drain-source voltage: 20V
Drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5300TRPBF pVersion=0046&contRep=ZT&docId=E221B6FA6CAF00F1A303005056AB0C4F&compId=irfh5300pbf.pdf?ci_sign=16877abd46adde0d05dd5636df9b1e140cef2b47
IRFH5300TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5302DTRPBF pVersion=0046&contRep=ZT&docId=E221B7349604E7F1A303005056AB0C4F&compId=irfh5302dpbf.pdf?ci_sign=778d1e41cc6ae612b54c507919fb9ae33e6c8a87
IRFH5302DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5302TRPBF pVersion=0046&contRep=ZT&docId=E221B750AF2BF3F1A303005056AB0C4F&compId=irfh5302pbf.pdf?ci_sign=168686822e44708888b38f507989100363ce9544
IRFH5302TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5304TRPBF pVersion=0046&contRep=ZT&docId=E221B8DB432F7FF1A303005056AB0C4F&compId=irfh5304pbf.pdf?ci_sign=079e791adf6bc18ca27c2f430c26034f8cc54991
IRFH5304TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1403Q048X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q048X0200AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Produkt ist nicht verfügbar
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XMC1403Q048X0064AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q048X0064AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Integrated circuit features: EEPROM emulation; RTC; watchdog
Produkt ist nicht verfügbar
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ICE5AR4780BZSXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F2AF8C00A50A18&compId=ICE5ARxxxxBZS.pdf?ci_sign=a62ab432ead4174929122b170c27ba0a6892bb00
ICE5AR4780BZSXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
Produkt ist nicht verfügbar
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SPD50P03LGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DA9E7E5A51CC&compId=SPD50P03LGBTMA1-DTE.pdf?ci_sign=a20986a621e71ec1c6f409668776e8d55dea2f8c
SPD50P03LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
On-state resistance: 7mΩ
Power dissipation: 150W
auf Bestellung 2485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
32+2.25 EUR
62+1.16 EUR
65+1.1 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4127PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B721F1A6F5005056AB5A8F&compId=irfb4127pbf.pdf?ci_sign=ddafc47e6f7b0c1ae62e3c82167c1dd582ee261f
IRFB4127PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7537PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A69262455901EC&compId=irfs7537pbf.pdf?ci_sign=5f35c07031438beffb94243d453935f7d2efe081
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
36+1.99 EUR
43+1.69 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 28
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IRFB7430PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA56B08FDB5EA&compId=IRFB7430PBF.pdf?ci_sign=06bb1ab19637c4d745e3676bfe9c624f7cca507e
IRFB7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
24+3.02 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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IRFB5620PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A99F1A6F5005056AB5A8F&compId=irfb5620pbf.pdf?ci_sign=dba5e26ac2c7961fde53bfdd1882c9038aa6ace9
IRFB5620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
39+1.87 EUR
41+1.77 EUR
Mindestbestellmenge: 31
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IRFB3207PBF pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 20
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IRFB7534PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
48+1.5 EUR
50+1.43 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 35
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IPA50R280CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDED9A02745B1CC&compId=IPA50R280CE-DTE.pdf?ci_sign=a066060a8e4fa79cb0804ec9d84befd498ce3cdc
IPA50R280CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 30.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
66+1.1 EUR
81+0.89 EUR
86+0.84 EUR
Mindestbestellmenge: 35
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IPA50R950CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDC265D9431CC&compId=IPA50R950CE-DTE.pdf?ci_sign=2024861169eaf55680772217cf6cf99de93e0ce2
IPA50R950CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Power dissipation: 25.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
113+0.63 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE91C89A0F71CC&compId=IPA50R250CP-DTE.pdf?ci_sign=0316e1852350f0edf6d6295d7a00b4c2acf40bde
IPA50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 33W
Drain-source voltage: 500V
Case: TO220FP
Kind of package: tube
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R190CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDF08C2E171CC&compId=IPA50R190CE-DTE.pdf?ci_sign=e005fb1f8201a70c20ce97ed35abebd84cf20329
IPA50R190CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE94F4F51651CC&compId=IPA50R199CP-DTE.pdf?ci_sign=454170940fbb00506e16056806a3aff41185a47b
IPA50R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 139W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R500CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEDA485961D1CC&compId=IPA50R500CE-DTE.pdf?ci_sign=bebb744a20f727ec0b8f0c747fb2266d676ae43c
IPA50R500CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R399CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE8B1E4535F1CC&compId=IPA50R399CP-DTE.pdf?ci_sign=42760d96673f7b515b2b7d8fe7e964159cb01c2e
IPA50R399CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Power dissipation: 8.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R520CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDE900DBF53D1CC&compId=IPA50R520CP-DTE.pdf?ci_sign=48b324500d98190fb60fd8261ca2a53504008c15
IPA50R520CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R800CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE17E8DD7F1CC&compId=IPA50R800CE-DTE.pdf?ci_sign=e60562202a376529f147e9141e1e4c6bd962109d
IPA50R800CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB110N20N3LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9
IPB110N20N3LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20NAAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8F45FEA3211C&compId=IPP110N20NA-DTE.pdf?ci_sign=70b94064ff7df98367394afbee4bceb42f627658
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5D2357E44611C&compId=IPB019N06L3G-DTE.pdf?ci_sign=4b0168ba4c06a8a1305f4cb61675e11cd42afead
IPB019N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
32+2.25 EUR
34+2.12 EUR
200+2.04 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N08N3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAB6DE35C77DE27&compId=IPB019N08N3G-DTE.pdf?ci_sign=07ce8f1173d501dc930f45ad7fa2fde175466987
IPB019N08N3G
+1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N08N5ATMA1 Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 80V; 180A; 224W; TO263-7; SMT
Mounting: SMD
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 224W
Gate charge: 123nC
Case: TO263-7
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.55 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R900P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE698C6F5A53D1&compId=IPN80R900P7.pdf?ci_sign=1cb3ac008409bbbe434f89ad91f7ebd4ca924304
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50mA; 200mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 110
Mounting: SMD
Frequency: 40GHz
Application: automotive industry
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2ED300C17SROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Case: AG-EICE
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Application: for medium and high power application
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™; SiC
Topology: IGBT half-bridge
Voltage class: 1.7kV
Type of semiconductor module: gate driver board
Mounting: PCB
Operating temperature: -25...85°C
Produkt ist nicht verfügbar
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2ED300C17STROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of semiconductor module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5250DTRPBF pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8
IRFH5250DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5250TRPBF pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369
IRFH5250TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPLU300N04S4R8XTMA1 IPLU300N04S4-R8-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01476cd7a7417b72&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+4.28 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IPD025N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698F4A16FDCE11C&compId=IPD025N06N-DTE.pdf?ci_sign=4dbecac78d95e03a4f1e5519dd4a358c3fbeeacd
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BC858BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
725+0.099 EUR
1115+0.064 EUR
1260+0.057 EUR
1455+0.049 EUR
1540+0.046 EUR
Mindestbestellmenge: 725
Im Einkaufswagen  Stück im Wert von  UAH
BC858CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5D86C44C46469&compId=BC858CE6327.pdf?ci_sign=7c27749c1f60ff8d290e078d17a86fc2c435f1a4
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
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IPB031N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB151D4F9211C&compId=IPB031N08N5-DTE.pdf?ci_sign=3159f32d96288cc61656ed143c70a029107448c2
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Power dissipation: 167W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB031NE7N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5DD52B98B211C&compId=IPB031NE7N3G-DTE.pdf?ci_sign=cdda49cb192f2d913b204bf3b9535fc7bc4e1788
IPB031NE7N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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BCV62BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24
BCV62BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
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BCV62BE6327HTSA1 bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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BSC011N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520
BSC011N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC011N03LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d
BSC011N03LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
84+0.86 EUR
98+0.74 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.39 EUR
Mindestbestellmenge: 65
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