Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152097) > Seite 2512 nach 2535
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IRF7380TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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AUIRFB8405 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFB8409 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 195A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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SPP18P06PHXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.7A Power dissipation: 81.1W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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IR38263MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Topology: buck Kind of package: reel; tape Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Case: PQFN5X7 Interface: PMBus; PVID Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C DC supply current: 50mA Output current: 30A Output voltage: 0.5...14V DC Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Frequency: 0.15...1.5MHz |
Produkt ist nicht verfügbar |
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BSC110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8 Mounting: SMD On-state resistance: 11mΩ Drain current: 50A Gate-source voltage: ±20V Power dissipation: 50W Drain-source voltage: 60V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
BSC110N15NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W Mounting: SMD On-state resistance: 11mΩ Drain current: 48A Gate-source voltage: ±20V Power dissipation: 125W Drain-source voltage: 150V Pulsed drain current: 304A Kind of channel: enhancement Technology: OptiMOS™ 5 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
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BSC117N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8 Mounting: SMD On-state resistance: 11.7mΩ Drain current: 49A Gate-source voltage: ±20V Power dissipation: 50W Drain-source voltage: 80V Kind of channel: enhancement Technology: OptiMOS™ 5 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC118N10NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD On-state resistance: 11.8mΩ Drain current: 71A Gate-source voltage: ±20V Power dissipation: 114W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 2 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC123N10LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD On-state resistance: 12.3mΩ Drain current: 71A Gate-source voltage: ±20V Power dissipation: 114W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 2 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC12DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8 Mounting: SMD On-state resistance: 0.125Ω Drain current: 11.3A Gate-source voltage: ±20V Power dissipation: 50W Drain-source voltage: 200V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC16DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Kind of channel: enhancement Drain current: 10.9A On-state resistance: 0.165Ω Power dissipation: 62.5W Gate-source voltage: ±20V Drain-source voltage: 250V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC190N12NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8 Mounting: SMD On-state resistance: 19mΩ Drain current: 44A Gate-source voltage: ±20V Power dissipation: 69W Drain-source voltage: 120V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC196N10NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8 Mounting: SMD On-state resistance: 19.6mΩ Drain current: 45A Gate-source voltage: ±20V Power dissipation: 78W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 2 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-EASY1B-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SPD03N60C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRL3103STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Kind of package: reel Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLS115B0LDXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.25V Output voltage: 2...14V Output current: 0.15A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±0.1% Input voltage: 4...45V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRF6648TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 86A Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 89W Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BTS50080-1TEA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Mounting: SMD Number of channels: 1 Case: PG-TO252-5-11 Supply voltage: 5.5...30V DC On-state resistance: 16mΩ Technology: High Current PROFET Output voltage: 39V Kind of output: N-Channel |
auf Bestellung 715 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Kind of channel: enhancement Case: SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Polarisation: unipolar Drain-source voltage: -100V Drain current: -290mA On-state resistance: 2.2Ω Power dissipation: 0.5W Gate-source voltage: ±20V |
auf Bestellung 1178 Stücke: Lieferzeit 14-21 Tag (e) |
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IDP15E65D2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Features of semiconductor devices: fast switching |
auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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IDP15E65D1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ITS5215L | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Case: BSOP12 Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch On-state resistance: 70mΩ Number of channels: 2 Output current: 3.7A Supply voltage: 5.5...40V DC Technology: Industrial PROFET Kind of integrated circuit: high-side |
auf Bestellung 749 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7420TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -11.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7250VSJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7251VSJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 3...5.5V DC Interface: CAN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7257SJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 3mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 5.5...18V DC Interface: LIN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7268SKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-14 Operating temperature: -40...150°C Kind of package: reel; tape Number of transmitters: 2 Number of receivers: 2 Supply voltage: 5.5...40V DC Interface: LIN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7250SJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7250XSJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLE7258DXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-TSON-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 3mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 5.5...18V DC Interface: LIN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
TLE7268LCXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-TSON-14 Operating temperature: -40...150°C Kind of package: reel; tape Number of transmitters: 2 Number of receivers: 2 Supply voltage: 5.5...40V DC Interface: LIN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
FM24CL16B-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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FM24CL16B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IRFR3910TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IKCM15H60GAXKMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -15...15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Voltage class: 600V Power dissipation: 25.2W |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH8307TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IRFH8303TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 280A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BAS3010A03WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A |
auf Bestellung 2685 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IR2128SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3607TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK Kind of package: reel Case: DPAK Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IDW40G65C5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W Case: PG-TO247-3 Technology: CoolSiC™ 5G; SiC Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 8.2µA Max. forward voltage: 1.8V Power dissipation: 112W Load current: 40A Max. forward impulse current: 153A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
CY7C2245KV18-450BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 450MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPA65R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPI65R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPP65R280E6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPB65R280E6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPI65R280C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BCR602XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Output current: 10mA Case: PG-SOT23-6 Mounting: SMD Number of channels: 1 Integrated circuit features: linear dimming; PWM Operating voltage: 8...60V DC Protection: overheating OTP |
auf Bestellung 1566 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP78 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V |
auf Bestellung 2569 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3230AKSA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Integrated circuit features: internal temperature sensor Kind of integrated circuit: low-side Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 Type of integrated circuit: power switch Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C On-state resistance: 6.5mΩ Output current: 36A Number of channels: 1 Output voltage: 49V Power dissipation: 300W |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5120-2EKA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Output current: 2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 0.22Ω Supply voltage: 8...18V DC Technology: PROFET™+ 12V Kind of integrated circuit: high-side |
auf Bestellung 1846 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS282ZE3180AATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1 Power dissipation: 300W Case: PG-TO263-7-1 On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Technology: TEMPFET® Integrated circuit features: internal temperature sensor Kind of integrated circuit: low-side Kind of output: N-Channel Type of integrated circuit: power switch Operating temperature: -40...175°C Number of channels: 1 Output current: 36A Output voltage: 49V |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP4368PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 350A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T Pulsed drain current: 140A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IPN80R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD Type of transistor: N-MOSFET Case: PG-SOT223 Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 11nC On-state resistance: 1.2Ω Drain current: 3.1A Power dissipation: 6.8W Gate-source voltage: ±20V Drain-source voltage: 800V Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DD100N16S | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw Semiconductor structure: double series Type of semiconductor module: diode Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.6V Load current: 130A Max. off-state voltage: 1.6kV Max. forward impulse current: 2.5kA Case: BG-SB20-1 |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857BE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRF7380TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFB8405 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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12+ | 6.09 EUR |
13+ | 5.51 EUR |
AUIRFB8409 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPP18P06PHXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.37 EUR |
32+ | 2.23 EUR |
IR38263MTRPBFAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Interface: PMBus; PVID
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 50mA
Output current: 30A
Output voltage: 0.5...14V DC
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Interface: PMBus; PVID
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 50mA
Output current: 30A
Output voltage: 0.5...14V DC
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC110N06NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC110N15NS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC117N08NS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC118N10NSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC123N10LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC12DN20NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC16DN25NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC190N12NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC196N10NSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP10R12W1T7B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPD03N60C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL3103STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLS115B0LDXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF6648TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS50080-1TEA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Mounting: SMD
Number of channels: 1
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Technology: High Current PROFET
Output voltage: 39V
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Mounting: SMD
Number of channels: 1
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Technology: High Current PROFET
Output voltage: 39V
Kind of output: N-Channel
auf Bestellung 715 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.98 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
BSR316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Kind of channel: enhancement
Case: SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Kind of channel: enhancement
Case: SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
168+ | 0.43 EUR |
207+ | 0.35 EUR |
261+ | 0.27 EUR |
275+ | 0.26 EUR |
IDP15E65D2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.09 EUR |
46+ | 1.57 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
100+ | 0.92 EUR |
IDP15E65D1XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITS5215L |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Number of channels: 2
Output current: 3.7A
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Number of channels: 2
Output current: 3.7A
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
auf Bestellung 749 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
24+ | 3 EUR |
27+ | 2.73 EUR |
32+ | 2.26 EUR |
34+ | 2.14 EUR |
35+ | 2.06 EUR |
IRF7420TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7250VSJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7251VSJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7257SJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7268SKXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7250SJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7250XSJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7258DXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7268LCXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM24CL16B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FM24CL16B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR3910TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKCM15H60GAXKMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.62 EUR |
8+ | 10.02 EUR |
14+ | 9.84 EUR |
IRFH8307TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH8303TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS3010A03WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
243+ | 0.29 EUR |
309+ | 0.23 EUR |
343+ | 0.21 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
IRFS4310ZTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2128SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
IRFR3607TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
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IDW40G65C5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 8.2µA
Max. forward voltage: 1.8V
Power dissipation: 112W
Load current: 40A
Max. forward impulse current: 153A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 8.2µA
Max. forward voltage: 1.8V
Power dissipation: 112W
Load current: 40A
Max. forward impulse current: 153A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY7C2245KV18-450BZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPA65R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPI65R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP65R280E6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB65R280E6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI65R280C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR602XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 10mA
Case: PG-SOT23-6
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 8...60V DC
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 10mA
Case: PG-SOT23-6
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 8...60V DC
Protection: overheating OTP
auf Bestellung 1566 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
110+ | 0.65 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
250+ | 0.45 EUR |
BSP78 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2569 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
32+ | 2.27 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
1000+ | 1.27 EUR |
2000+ | 1.26 EUR |
BTS282ZE3230AKSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
Type of integrated circuit: power switch
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
On-state resistance: 6.5mΩ
Output current: 36A
Number of channels: 1
Output voltage: 49V
Power dissipation: 300W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
Type of integrated circuit: power switch
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
On-state resistance: 6.5mΩ
Output current: 36A
Number of channels: 1
Output voltage: 49V
Power dissipation: 300W
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.02 EUR |
12+ | 6.22 EUR |
13+ | 5.89 EUR |
BTS5120-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
auf Bestellung 1846 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.46 EUR |
32+ | 2.26 EUR |
52+ | 1.39 EUR |
55+ | 1.32 EUR |
1000+ | 1.27 EUR |
BTS282ZE3180AATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Power dissipation: 300W
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...175°C
Number of channels: 1
Output current: 36A
Output voltage: 49V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Power dissipation: 300W
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...175°C
Number of channels: 1
Output current: 36A
Output voltage: 49V
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.11 EUR |
13+ | 5.59 EUR |
IRFP4368PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.24 EUR |
15+ | 4.82 EUR |
16+ | 4.56 EUR |
IPD35N10S3L26ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPN80R1K2P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 1.2Ω
Drain current: 3.1A
Power dissipation: 6.8W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 1.2Ω
Drain current: 3.1A
Power dissipation: 6.8W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DD100N16S |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
Case: BG-SB20-1
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
Case: BG-SB20-1
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.74 EUR |
BC857BE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH