Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (150666) > Seite 2512 nach 2512
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPA320N20NM3SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP Case: TO220FP Mounting: THT Drain-source voltage: 200V Drain current: 19A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 104A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IPI320N20N3GAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3 Case: PG-TO262-3 Mounting: THT Drain-source voltage: 200V Drain current: 34A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
BCR108E6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3806PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 71W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP62H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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BGA616H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: operational amplifier |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA320N20NM3SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Drain-source voltage: 200V
Drain current: 19A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 104A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Drain-source voltage: 200V
Drain current: 19A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 104A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI320N20N3GAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR108E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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10000+ | 0.044 EUR |
IRFB3806PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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41+ | 1.77 EUR |
60+ | 1.21 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
BSP62H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD Darlington transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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1000+ | 0.21 EUR |
BGA616H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3000+ | 0.93 EUR |