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IPD90P04P405ATMA2 INFINEON TECHNOLOGIES Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.3 EUR
Mindestbestellmenge: 2500
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IRFB4137PBF IRFB4137PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
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17+4.25 EUR
23+3.1 EUR
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IDH02G120C5XKSA1 IDH02G120C5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB83CA5339CAFA8&compId=IDH02G120C5-DTE.pdf?ci_sign=c0376ff0f508097055bda59dd691f57aee3224bb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Case: PG-TO220-2
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
35+2.1 EUR
36+1.99 EUR
250+1.96 EUR
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
auf Bestellung 82 Stücke:
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50+1.63 EUR
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6EDL04N02PR 6EDL04N02PR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79597E2A9163A8747&compId=6EDL04N02PR.pdf?ci_sign=8bd3da517352d4c6ba4d0d0ba3a732ae80bcef92 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Supply voltage: 10...17.5V
Mounting: SMD
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Voltage class: 200V
Produkt ist nicht verfügbar
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9201B98D6931CC&compId=BSO207PHXUMA1-dte.pdf?ci_sign=2811562156a4c4d38b1a34d9d8a1b5a7805321a2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
auf Bestellung 2211 Stücke:
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218+0.33 EUR
224+0.32 EUR
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9204080D26B1CC&compId=BSO211PHXUMA1-dte.pdf?ci_sign=da04bb6283d5de44bff6ec37f2de7d95f13433e2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
auf Bestellung 2320 Stücke:
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173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
224+0.32 EUR
237+0.3 EUR
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BSO201SPHXUMA1 BSO201SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
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BSO203PHXUMA1 BSO203PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Produkt ist nicht verfügbar
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BSO203SPHXUMA1 BSO203SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Produkt ist nicht verfügbar
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BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
Produkt ist nicht verfügbar
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BSO303SPHXUMA1 BSO303SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9209F3CB13F1CC&compId=BSO303SPHXUMA1-dte.pdf?ci_sign=81198fd7aed0081e5b6b98687ef88223814de38a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Produkt ist nicht verfügbar
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BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
Produkt ist nicht verfügbar
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BSO301SPHXUMA1 BSO301SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
Produkt ist nicht verfügbar
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BSO613SPVGXUMA1 BSO613SPVGXUMA1 INFINEON TECHNOLOGIES Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
Produkt ist nicht verfügbar
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IRFR2607ZTRPBF IRFR2607ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCF1A1DF6F75EA&compId=IRFR2607ZTRPBF.pdf?ci_sign=b0073f87bd84f3db9140de5fe9dcde8776a98707 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Drain-source voltage: 75V
Drain current: 45A
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
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XMC750 WATT MOTOR CONTROL KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Application: 3-phase BLDC motors
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IPP410N30NAKSA1 IPP410N30NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Mounting: THT
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
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7+10.74 EUR
10+7.29 EUR
11+6.89 EUR
Mindestbestellmenge: 7
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CY7C1354C-166AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
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CY7C1354C-166AXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
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CY7C1354C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1356C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1360C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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ICE2HS01G ICE2HS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Polarisation: N
auf Bestellung 20000 Stücke:
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BB439E6327HTSA1 BB439E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B38767005E27&compId=BB439-DTE.pdf?ci_sign=360554e1b6e733f8b3fda7fe5ed458dcb6822e7f Category: Diodes - others
Description: Diode: varicap; 28V; 20mA; SOD323; single diode; reel,tape
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 5.1...53pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 28V
Case: SOD323
Produkt ist nicht verfügbar
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ISP762T ISP762T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A76A684FE469&compId=ISP762T.pdf?ci_sign=e0597ca21b92fe458fc569c6684cec42314bdc9c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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IRF7504TRPBF IRF7504TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A68E7FB51CF1A303005056AB0C4F&compId=irf7504pbf.pdf?ci_sign=93ed01114c3194e4bd10e4451c4a0ace3b64b097 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7503TRPBF IRF7503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A66A5A9519F1A303005056AB0C4F&compId=irf7503pbf.pdf?ci_sign=bdb7ae8ebb62044e85cce1427c39fefdef9eba5c Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7506TRPBF IRF7506TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A6AACD631FF1A303005056AB0C4F&compId=irf7506pbf.pdf?ci_sign=5ad3e8aedd62bd3f4fd506ca509f40df342a54ad Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Kind of package: reel
Case: SO8
Drain-source voltage: -30V
Drain current: -1.7A
Type of transistor: P-MOSFET x2
Power dissipation: 1.25W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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TD500N16KOFHPSA1 TD500N16KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 TT500N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF TZ600N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N16KOF TZ500N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFR5410TRRPBF IRFR5410TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 BCR191E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 325 Stücke:
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91E6123DFF1BF&compId=IPL65R1K5C6S-DTE.pdf?ci_sign=969cf8172b02fdcd0df90401c7352a0acdf47886 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Case: PG-VSON-4
Mounting: SMD
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 26.6W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 3A
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6+11.91 EUR
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IPL60R075CFD7 IPL60R075CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA76F5DF84074A&compId=IPL60R075CFD7.pdf?ci_sign=bbf5bff69a5a7dcb91600f1953d938f86b5570fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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S25FL064LABMFA010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL064LABMFA011 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
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S25FL064LABMFA013 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL128LAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL512SAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FL01GSAGMFA010 INFINEON TECHNOLOGIES 002-00466%20Rev%20J.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IR21834STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
Voltage class: 600V
auf Bestellung 2500 Stücke:
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2500+2.09 EUR
Mindestbestellmenge: 2500
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A8BF1A6F5005056AB5A8F&compId=irfs52n15d.pdf?ci_sign=dd3f590212d2c22ca8bc1539635902e7d0156b8c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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4+17.88 EUR
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IGCM04G60HAXKMA1 IGCM04G60HAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACC01A37E9D3D7&compId=IGCM04G60HA.pdf?ci_sign=7d15329436abe701c9bb6bb687929afe58344d0a Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
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8+9.75 EUR
10+7.48 EUR
11+7.06 EUR
Mindestbestellmenge: 8
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PVG612S-TPBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2.4A
Type of relay: solid state
Contacts configuration: SPST
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2.4A
Manufacturer series: PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
750+6.94 EUR
Mindestbestellmenge: 750
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BTS3050EJ BTS3050EJ INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB99598EF12749&compId=BTS3050EJ.pdf?ci_sign=89d5832899019faccad3ed7558afa1e764f18f05 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
49+1.47 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 44
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IPD90P04P405ATMA2 Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.3 EUR
Mindestbestellmenge: 2500
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IRFB4137PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA26580F5B5EA&compId=IRFB4137PBF.pdf?ci_sign=5b0ba6a15b558079509649f4bc5e8ff398f62088
IRFB4137PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
23+3.1 EUR
Mindestbestellmenge: 17
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IDH02G120C5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB83CA5339CAFA8&compId=IDH02G120C5-DTE.pdf?ci_sign=c0376ff0f508097055bda59dd691f57aee3224bb
IDH02G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Case: PG-TO220-2
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
35+2.1 EUR
36+1.99 EUR
250+1.96 EUR
Mindestbestellmenge: 29
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SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.63 EUR
Mindestbestellmenge: 50
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6EDL04N02PR pVersion=0046&contRep=ZT&docId=005056AB752F1EE79597E2A9163A8747&compId=6EDL04N02PR.pdf?ci_sign=8bd3da517352d4c6ba4d0d0ba3a732ae80bcef92
6EDL04N02PR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Supply voltage: 10...17.5V
Mounting: SMD
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Voltage class: 200V
Produkt ist nicht verfügbar
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BSC035N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSO207PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9201B98D6931CC&compId=BSO207PHXUMA1-dte.pdf?ci_sign=2811562156a4c4d38b1a34d9d8a1b5a7805321a2
BSO207PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5A
Drain-source voltage: -20V
On-state resistance: 45mΩ
Power dissipation: 1.6W
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
224+0.32 EUR
Mindestbestellmenge: 218
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BSO211PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9204080D26B1CC&compId=BSO211PHXUMA1-dte.pdf?ci_sign=da04bb6283d5de44bff6ec37f2de7d95f13433e2
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.6A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 1.6W
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
224+0.32 EUR
237+0.3 EUR
Mindestbestellmenge: 173
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BSO201SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784
BSO201SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
Produkt ist nicht verfügbar
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BSO203PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9
BSO203PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
Produkt ist nicht verfügbar
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BSO203SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb
BSO203SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Drain-source voltage: -20V
Drain current: -7A
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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BSO080P03SHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5
BSO080P03SHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Power dissipation: 1.79W
Case: PG-DSO-8
Gate-source voltage: ±25V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Produkt ist nicht verfügbar
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BSO110N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934
BSO110N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
Produkt ist nicht verfügbar
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BSO303SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9209F3CB13F1CC&compId=BSO303SPHXUMA1-dte.pdf?ci_sign=81198fd7aed0081e5b6b98687ef88223814de38a
BSO303SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Produkt ist nicht verfügbar
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BSO033N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9
BSO033N03MSGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
Produkt ist nicht verfügbar
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BSO301SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205
BSO301SPHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
Produkt ist nicht verfügbar
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BSO613SPVGXUMA1 Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c
BSO613SPVGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
Produkt ist nicht verfügbar
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IRFR2607ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCF1A1DF6F75EA&compId=IRFR2607ZTRPBF.pdf?ci_sign=b0073f87bd84f3db9140de5fe9dcde8776a98707
IRFR2607ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Drain-source voltage: 75V
Drain current: 45A
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
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XMC750 WATT MOTOR CONTROL KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Application: 3-phase BLDC motors
Produkt ist nicht verfügbar
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IPB037N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad
IPB037N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP410N30NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703
IPP410N30NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Mounting: THT
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO220-3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.74 EUR
10+7.29 EUR
11+6.89 EUR
Mindestbestellmenge: 7
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CY7C1354C-166AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Kind of package: reel; tape
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1356C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1360C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Kind of package: in-tray
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE2HS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381
ICE2HS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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BSZ180P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a
BSZ180P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ180P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796
BSZ180P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 69W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Gate-source voltage: 20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Polarisation: N
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.62 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BB439E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B38767005E27&compId=BB439-DTE.pdf?ci_sign=360554e1b6e733f8b3fda7fe5ed458dcb6822e7f
BB439E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 28V; 20mA; SOD323; single diode; reel,tape
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 5.1...53pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 28V
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP762T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A76A684FE469&compId=ISP762T.pdf?ci_sign=e0597ca21b92fe458fc569c6684cec42314bdc9c
ISP762T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7504TRPBF pVersion=0046&contRep=ZT&docId=E221A68E7FB51CF1A303005056AB0C4F&compId=irf7504pbf.pdf?ci_sign=93ed01114c3194e4bd10e4451c4a0ace3b64b097
IRF7504TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7503TRPBF pVersion=0046&contRep=ZT&docId=E221A66A5A9519F1A303005056AB0C4F&compId=irf7503pbf.pdf?ci_sign=bdb7ae8ebb62044e85cce1427c39fefdef9eba5c
IRF7503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7506TRPBF pVersion=0046&contRep=ZT&docId=E221A6AACD631FF1A303005056AB0C4F&compId=irf7506pbf.pdf?ci_sign=5ad3e8aedd62bd3f4fd506ca509f40df342a54ad
IRF7506TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Kind of package: reel
Case: SO8
Drain-source voltage: -30V
Drain current: -1.7A
Type of transistor: P-MOSFET x2
Power dissipation: 1.25W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD500N16KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb
TD500N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055
TD500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT570N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657
TT570N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT500N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0
TT500N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ600N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45
TZ600N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT500N14KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35
TZ500N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5410TRRPBF pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831
IRFR5410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f
BCR191E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.21 EUR
Mindestbestellmenge: 325
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R1K5C6SATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91E6123DFF1BF&compId=IPL65R1K5C6S-DTE.pdf?ci_sign=969cf8172b02fdcd0df90401c7352a0acdf47886
IPL65R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Case: PG-VSON-4
Mounting: SMD
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 26.6W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 3A
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R075CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA76F5DF84074A&compId=IPL60R075CFD7.pdf?ci_sign=bbf5bff69a5a7dcb91600f1953d938f86b5570fa
IPL60R075CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF description pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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S25FL064LABMFA010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128LAGMFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S25FL512SAGMFA010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FL01GSAGMFA010 002-00466%20Rev%20J.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
Voltage class: 600V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.09 EUR
Mindestbestellmenge: 2500
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IRFB52N15DPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A8BF1A6F5005056AB5A8F&compId=irfs52n15d.pdf?ci_sign=dd3f590212d2c22ca8bc1539635902e7d0156b8c
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IGCM04G60HAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACC01A37E9D3D7&compId=IGCM04G60HA.pdf?ci_sign=7d15329436abe701c9bb6bb687929afe58344d0a
IGCM04G60HAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.75 EUR
10+7.48 EUR
11+7.06 EUR
Mindestbestellmenge: 8
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PVG612S-TPBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2.4A
Type of relay: solid state
Contacts configuration: SPST
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2.4A
Manufacturer series: PVG612
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+6.94 EUR
Mindestbestellmenge: 750
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BTS3050EJ pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB99598EF12749&compId=BTS3050EJ.pdf?ci_sign=89d5832899019faccad3ed7558afa1e764f18f05
BTS3050EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 44
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