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IKW25T120FKSA1 IKW25T120FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44779C934C469&compId=IKW25T120.pdf?ci_sign=64fd4beb06f11287c2206cd3385a3c737cc94013 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.92 EUR
12+6.33 EUR
15+4.96 EUR
16+4.69 EUR
Mindestbestellmenge: 11
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PVT322PBF PVT322PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0C9ACEC8401EC&compId=pvt322.pdf?ci_sign=b9abbd52b80cec3b819c7a498466d806bbe1483b Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 500mA
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 3ms
Release time: 0.5ms
Produkt ist nicht verfügbar
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 143W
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
42+1.72 EUR
46+1.57 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 28
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IRFHM830TRPBF IRFHM830TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BBBE0D2352F1A303005056AB0C4F&compId=irfhm830pbf.pdf?ci_sign=7760142d87f380f048badd1b91634d932e827dd0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92879E7F2651CC&compId=BSS223PWH6327XTSA1-dte.pdf?ci_sign=abe3df05106a83ed43dc0e080d91b36c045d224a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
379+0.19 EUR
479+0.15 EUR
579+0.12 EUR
693+0.1 EUR
957+0.075 EUR
1053+0.068 EUR
Mindestbestellmenge: 250
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IRFS4310TRLPBF IRFS4310TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C88B246D09F1A303005056AB0C4F&compId=irfs4310pbf.pdf?ci_sign=2ba0ed2c7db4f06ecd950a74a0a6d9e52fd245bf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7437TRLPBF IRFS7437TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
34+2.13 EUR
36+2 EUR
Mindestbestellmenge: 26
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IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA5EB3E6F411C&compId=IPP126N10N3G-DTE.pdf?ci_sign=35a144c2f33ca71b6a8eca3700b3927fd3fd0b32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
On-state resistance: 12.6mΩ
Drain current: 58A
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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BSC252N10NSFGATMA1 BSC252N10NSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222805218164EF1A303005056AB0C4F&compId=irlr6225pbf.pdf?ci_sign=c90e685b7210caa8a81bba363c2cbb3e203cae67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 63W
Drain current: 100A
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
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IRF7410TRPBF IRF7410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB7446PBF IRFB7446PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAD99D30235EA&compId=IRFB7446PBF.pdf?ci_sign=6a49d11612e82c301cf8185b0441112f35f31c0e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
84+0.86 EUR
108+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 75
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IRFH7440TRPBF IRFH7440TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2.4mΩ
Gate charge: 92nC
Gate-source voltage: ±20V
auf Bestellung 3341 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
46+1.59 EUR
53+1.37 EUR
55+1.3 EUR
500+1.29 EUR
1000+1.26 EUR
Mindestbestellmenge: 43
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC806F54F7411C&compId=IPP147N12N3G-DTE.pdf?ci_sign=945ce453b57d201a315496168289cae38b7ff480 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
40+1.79 EUR
Mindestbestellmenge: 35
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IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
70+1.04 EUR
87+0.83 EUR
92+0.78 EUR
250+0.77 EUR
Mindestbestellmenge: 59
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BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B75F8A79EA611C&compId=BSP135H6327XTSA1.pdf?ci_sign=b914401dd26fa7619fb03c1cf6bf9912261be089 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
auf Bestellung 1483 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
71+1.01 EUR
117+0.61 EUR
124+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 52
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Produkt ist nicht verfügbar
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)
653+0.11 EUR
Mindestbestellmenge: 653
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5 Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Case: ATSLP-10-2
Bandwidth: 0.1...6GHz
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
Mindestbestellmenge: 61
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BAT6405WH6327XTSA1 BAT6405WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
379+0.19 EUR
447+0.16 EUR
658+0.11 EUR
770+0.093 EUR
807+0.089 EUR
848+0.084 EUR
Mindestbestellmenge: 313
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.19 EUR
46+1.56 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 33
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
auf Bestellung 1152 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.25 EUR
20+3.75 EUR
21+3.49 EUR
25+3.42 EUR
Mindestbestellmenge: 17
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES 1ED020I12-F_Ver2.3_May2011.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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BFP640H6327XTSA1 BFP640H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5DD820&compId=Infineon-BFP640-DS-v03_00-EN.pdf?ci_sign=8598667148023825c70ff370d5b13105b6eb907b Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
145+0.49 EUR
182+0.39 EUR
243+0.3 EUR
257+0.28 EUR
Mindestbestellmenge: 114
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BFP760H6327XTSA1 BFP760H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90FA0EABC59E80D3&compId=BFP760.pdf?ci_sign=1929f603bc546f8a545134befdd1ff3f3e6f452c Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Mounting: SMD
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2101 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
242+0.3 EUR
262+0.27 EUR
Mindestbestellmenge: 173
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IPP039N04LGXKSA1 IPP039N04LGXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E969F612F1E11C&compId=IPP039N04LG-DTE.pdf?ci_sign=1ab9746543755d577d3301e9081234380060d3de Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
63+1.14 EUR
76+0.94 EUR
78+0.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFR8314TRPBF IRFR8314TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEE6ACC2908143&compId=IRFR8314TRPBF.pdf?ci_sign=62635df23b932e52fbdf293ba7105247b029c798 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Gate charge: 36nC
On-state resistance: 3.1mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 127A
Drain-source voltage: 30V
auf Bestellung 2129 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
49+1.48 EUR
85+0.85 EUR
90+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 33
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Gate charge: 17nC
Power dissipation: 27W
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
52+1.4 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 40
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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.5A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Case: SC79
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
368+0.19 EUR
391+0.18 EUR
477+0.15 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 313
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BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4EECEAA10C259&compId=BTS5030-1EJA.pdf?ci_sign=25f2afe1cf2c7472cefa85b9ca4559e7261c2c31 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 661 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
41+1.77 EUR
43+1.67 EUR
250+1.62 EUR
Mindestbestellmenge: 21
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BTS6133D BTS6133D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987EA20CFB6469&compId=BTS6133D.pdf?ci_sign=2f43acd29dc3b9b6e224e7f86f62b1384a1b7c82 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.92 EUR
30+2.42 EUR
32+2.27 EUR
Mindestbestellmenge: 19
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BTS6143D BTS6143D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B42634788B6469&compId=BTS6143D.pdf?ci_sign=fc01caa9553195a299c036982da51db7e3ca4de4 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.27 EUR
32+2.26 EUR
34+2.14 EUR
500+2.09 EUR
Mindestbestellmenge: 22
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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BA89202VH6127XTSA1 BA89202VH6127XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Case: SC79
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 35V
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1713+0.042 EUR
1812+0.039 EUR
Mindestbestellmenge: 582
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IRF7842TRPBF IRF7842TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
51+1.43 EUR
81+0.88 EUR
86+0.84 EUR
250+0.8 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
Power dissipation: 20.8W
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
122+0.59 EUR
130+0.55 EUR
135+0.53 EUR
148+0.48 EUR
Mindestbestellmenge: 107
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BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
685+0.1 EUR
810+0.088 EUR
1367+0.052 EUR
1446+0.049 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD725C62F8FF8BF&compId=1EDN7550B.pdf?ci_sign=d62005bdf2be1827abf849df53db753bfce48e1c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Case: PG-SOT23-6
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1507 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
75+0.96 EUR
107+0.67 EUR
113+0.64 EUR
Mindestbestellmenge: 66
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IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.33 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 14
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IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 40
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IRFIZ24NPBF IRFIZ24NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACA3AF1A6F5005056AB5A8F&compId=irfiz24n.pdf?ci_sign=ea6efa5688af3fcfb95c043bff4479f4f56c09fc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
53+1.37 EUR
83+0.87 EUR
88+0.82 EUR
100+0.79 EUR
Mindestbestellmenge: 49
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BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 9470 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
348+0.21 EUR
447+0.16 EUR
684+0.1 EUR
916+0.078 EUR
1153+0.062 EUR
1367+0.052 EUR
1690+0.042 EUR
1786+0.04 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8EF625A16D1BF&compId=IPI65R099C6-DTE.pdf?ci_sign=b7ecdbd0817188c32fbc3bd9e75ec036c5cb4a3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB914862BA111BF&compId=IPL65R099C7-DTE.pdf?ci_sign=6b815f4bb7536f080aad6f5d4850b9f64b26de1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB944D4022D91BF&compId=IPP65R099C6-DTE.pdf?ci_sign=59108e7d9ce3a0b6f5caf391c2a545255e688e7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404WH6327XTSA1 BAT6404WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: double series
Type of diode: Schottky rectifying
auf Bestellung 4145 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
404+0.18 EUR
470+0.15 EUR
532+0.13 EUR
599+0.12 EUR
838+0.085 EUR
887+0.081 EUR
1000+0.079 EUR
3000+0.078 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BAT6406WH6327XTSA1 BAT6406WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky rectifying
auf Bestellung 10240 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
782+0.092 EUR
848+0.084 EUR
3000+0.083 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
451+0.16 EUR
685+0.1 EUR
969+0.074 EUR
1025+0.07 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7734TRLPBF IRFS7734TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
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IKW25T120FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44779C934C469&compId=IKW25T120.pdf?ci_sign=64fd4beb06f11287c2206cd3385a3c737cc94013
IKW25T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.92 EUR
12+6.33 EUR
15+4.96 EUR
16+4.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PVT322PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0C9ACEC8401EC&compId=pvt322.pdf?ci_sign=b9abbd52b80cec3b819c7a498466d806bbe1483b
PVT322PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 500mA
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 3ms
Release time: 0.5ms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272
IRFU4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 143W
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
42+1.72 EUR
46+1.57 EUR
66+1.09 EUR
70+1.03 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM830TRPBF pVersion=0046&contRep=ZT&docId=E221BBBE0D2352F1A303005056AB0C4F&compId=irfhm830pbf.pdf?ci_sign=7760142d87f380f048badd1b91634d932e827dd0
IRFHM830TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS223PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92879E7F2651CC&compId=BSS223PWH6327XTSA1-dte.pdf?ci_sign=abe3df05106a83ed43dc0e080d91b36c045d224a
BSS223PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
379+0.19 EUR
479+0.15 EUR
579+0.12 EUR
693+0.1 EUR
957+0.075 EUR
1053+0.068 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4310TRLPBF pVersion=0046&contRep=ZT&docId=E221C88B246D09F1A303005056AB0C4F&compId=irfs4310pbf.pdf?ci_sign=2ba0ed2c7db4f06ecd950a74a0a6d9e52fd245bf
IRFS4310TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7437TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF862685D275EA&compId=IRFS7437TRLPBF.pdf?ci_sign=a3f823d66bb8afd4cb57907e326fc5e790c54ebf
IRFS7437TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
34+2.13 EUR
36+2 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IPP126N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA5EB3E6F411C&compId=IPP126N10N3G-DTE.pdf?ci_sign=35a144c2f33ca71b6a8eca3700b3927fd3fd0b32
IPP126N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
On-state resistance: 12.6mΩ
Drain current: 58A
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC252N10NSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB4E314A0011C&compId=BSC252N10NSFG-DTE.pdf?ci_sign=ec7850502a6223baabd11b26da46ad4a4a538a22
BSC252N10NSFGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR6225TRPBF pVersion=0046&contRep=ZT&docId=E222805218164EF1A303005056AB0C4F&compId=irlr6225pbf.pdf?ci_sign=c90e685b7210caa8a81bba363c2cbb3e203cae67
IRLR6225TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 63W
Drain current: 100A
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IRF7410TRPBF pVersion=0046&contRep=ZT&docId=E221A23D233598F1A303005056AB0C4F&compId=irf7410pbf.pdf?ci_sign=ed56f1efe816eb53c277cc5a0dcc077dfacc8801
IRF7410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7446PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAD99D30235EA&compId=IRFB7446PBF.pdf?ci_sign=6a49d11612e82c301cf8185b0441112f35f31c0e
IRFB7446PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 123A
Power dissipation: 99W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
84+0.86 EUR
108+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7440TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCBBFA706B75EA&compId=IRFH7440TRPBF.pdf?ci_sign=efd1156289203e6b12eeebd10aca763d039ad2e6
IRFH7440TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2.4mΩ
Gate charge: 92nC
Gate-source voltage: ±20V
auf Bestellung 3341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
46+1.59 EUR
53+1.37 EUR
55+1.3 EUR
500+1.29 EUR
1000+1.26 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IPP147N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC806F54F7411C&compId=IPP147N12N3G-DTE.pdf?ci_sign=945ce453b57d201a315496168289cae38b7ff480
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.79 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF7832TRPBF description pVersion=0046&contRep=ZT&docId=E221AC5A4F034FF1A303005056AB0C4F&compId=irf7832pbf.pdf?ci_sign=f6126aa60b44ed174e53d7e45af6de5bc1178cf8
IRF7832TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
70+1.04 EUR
87+0.83 EUR
92+0.78 EUR
250+0.77 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE599B75F8A79EA611C&compId=BSP135H6327XTSA1.pdf?ci_sign=b914401dd26fa7619fb03c1cf6bf9912261be089
BSP135H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
auf Bestellung 1483 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
71+1.01 EUR
117+0.61 EUR
124+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 52
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IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2101SPBF description pVersion=0046&contRep=ZT&docId=E1C04E9B5E26E5F1A6F5005056AB5A8F&compId=irs2101pbf.pdf?ci_sign=0c7d1ed5d887e67d675cd1f685c2f6e8713c1678
IRS2101SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1705WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1705WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 653 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
653+0.11 EUR
Mindestbestellmenge: 653
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS5703TRPBF pVersion=0046&contRep=ZT&docId=E2227D26FA7464F1A303005056AB0C4F&compId=irlms5703pbf.pdf?ci_sign=38add10ed924f0e4045c7b62faae0750f826b459
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX22G2A10E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFFB2A0C02A73D1&compId=BGSX22G2A10.pdf?ci_sign=111a42298677fba8d83d7c2b08f085f6ec5f0ed5
BGSX22G2A10E6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Case: ATSLP-10-2
Bandwidth: 0.1...6GHz
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
379+0.19 EUR
447+0.16 EUR
658+0.11 EUR
770+0.093 EUR
807+0.089 EUR
848+0.084 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IRF4104PBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AF6F1A6F5005056AB5A8F&compId=irf4104.pdf?ci_sign=13dddd15d243d1a7f4c02de7c9114bd8bbce11a4
IRF4104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
46+1.56 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12F2XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD881E853F2259&compId=1ED020I12-F2.pdf?ci_sign=7a0aa10f2c5c9bc192268ae50cfca85594182ebe
1ED020I12F2XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
auf Bestellung 1152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
20+3.75 EUR
21+3.49 EUR
25+3.42 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FXUMA2 1ED020I12-F_Ver2.3_May2011.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP640H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5DD820&compId=Infineon-BFP640-DS-v03_00-EN.pdf?ci_sign=8598667148023825c70ff370d5b13105b6eb907b
BFP640H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
145+0.49 EUR
182+0.39 EUR
243+0.3 EUR
257+0.28 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
BFP760H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD90FA0EABC59E80D3&compId=BFP760.pdf?ci_sign=1929f603bc546f8a545134befdd1ff3f3e6f452c
BFP760H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Mounting: SMD
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
auf Bestellung 2101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
209+0.34 EUR
232+0.31 EUR
242+0.3 EUR
262+0.27 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
IPP039N04LGXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E969F612F1E11C&compId=IPP039N04LG-DTE.pdf?ci_sign=1ab9746543755d577d3301e9081234380060d3de
IPP039N04LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
63+1.14 EUR
76+0.94 EUR
78+0.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFR8314TRPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBEE6ACC2908143&compId=IRFR8314TRPBF.pdf?ci_sign=62635df23b932e52fbdf293ba7105247b029c798
IRFR8314TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Gate charge: 36nC
On-state resistance: 3.1mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 127A
Drain-source voltage: 30V
auf Bestellung 2129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
49+1.48 EUR
85+0.85 EUR
90+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R900P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD451B19C0143&compId=IPA80R900P7.pdf?ci_sign=4099e9ca1d487bf2abc3da68f46df64d1678847d
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Gate charge: 17nC
Power dissipation: 27W
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
52+1.4 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
BAS3005B02VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF44459099C469&compId=BAS3005B02VH6327XT.pdf?ci_sign=78eead26a8a3e3ccae040d2a59e4ef7c2af2aac4
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.5A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Case: SC79
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
368+0.19 EUR
391+0.18 EUR
477+0.15 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BTS5030-1EJA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4EECEAA10C259&compId=BTS5030-1EJA.pdf?ci_sign=25f2afe1cf2c7472cefa85b9ca4559e7261c2c31
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 661 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
41+1.77 EUR
43+1.67 EUR
250+1.62 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BTS6133D pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987EA20CFB6469&compId=BTS6133D.pdf?ci_sign=2f43acd29dc3b9b6e224e7f86f62b1384a1b7c82
BTS6133D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.92 EUR
30+2.42 EUR
32+2.27 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BTS6143D description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B42634788B6469&compId=BTS6143D.pdf?ci_sign=fc01caa9553195a299c036982da51db7e3ca4de4
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
32+2.26 EUR
34+2.14 EUR
500+2.09 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
TT215N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE6233D8518469&compId=TT215N22KOF.pdf?ci_sign=16d94dac587ccb4d664cead3a8217b67fb2e7f68
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BA89202VH6127XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999C375CDE8BE27&compId=BAx92-DTE.pdf?ci_sign=d977ca4460297672ce02944aaf064ebfb979b9e6
BA89202VH6127XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Mounting: SMD
Case: SC79
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 35V
auf Bestellung 2272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
962+0.074 EUR
1260+0.057 EUR
1713+0.042 EUR
1812+0.039 EUR
Mindestbestellmenge: 582
Im Einkaufswagen  Stück im Wert von  UAH
IRF7842TRPBF description pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c
IRF7842TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3047 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
51+1.43 EUR
81+0.88 EUR
86+0.84 EUR
250+0.8 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IRFSL4310ZPBF pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d
IRFSL4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD7E380C25A259&compId=FF200R12KT4.pdf?ci_sign=5e50d6ff781eb9cb0c9d8f539521efc04dd4d0ba
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IPAN70R750P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC73D185F653D1&compId=IPAN70R750P7S.pdf?ci_sign=8dce55abf8132a1c9306f3e6d758a5133e9ded1c
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
Power dissipation: 20.8W
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
122+0.59 EUR
130+0.55 EUR
135+0.53 EUR
148+0.48 EUR
Mindestbestellmenge: 107
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BAS7006WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7006WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
685+0.1 EUR
810+0.088 EUR
1367+0.052 EUR
1446+0.049 EUR
Mindestbestellmenge: 295
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1EDN7550BXTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD725C62F8FF8BF&compId=1EDN7550B.pdf?ci_sign=d62005bdf2be1827abf849df53db753bfce48e1c
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Case: PG-SOT23-6
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1507 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
75+0.96 EUR
107+0.67 EUR
113+0.64 EUR
Mindestbestellmenge: 66
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IRLMS1902TRPBF pVersion=0046&contRep=ZT&docId=E2227CD3BEA965F1A303005056AB0C4F&compId=irlms1902pbf.pdf?ci_sign=e136a626b5a031e6f0ab75cf9615f2ae6f830f66
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF description pVersion=0046&contRep=ZT&docId=E2227CBB1072A5F1A303005056AB0C4F&compId=irlms1503pbf.pdf?ci_sign=6735421fd4c509c3d1d98293129cb2545deb82bc
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFSL4010PBF description pVersion=0046&contRep=ZT&docId=E221C7C5DE110DF1A303005056AB0C4F&compId=irfs4010pbf.pdf?ci_sign=a979ab89e260f0c2fefc1124d2422354bfef6092
IRFSL4010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.33 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 14
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IRS2104SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E2701F1A6F5005056AB5A8F&compId=irs2104.pdf?ci_sign=1d377a7bf2686aea3a386dc39bd6d62ec322f92d
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
42+1.73 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 40
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IRFIZ24NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACA3AF1A6F5005056AB5A8F&compId=irfiz24n.pdf?ci_sign=ea6efa5688af3fcfb95c043bff4479f4f56c09fc
IRFIZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
53+1.37 EUR
83+0.87 EUR
88+0.82 EUR
100+0.79 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 9470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
348+0.21 EUR
447+0.16 EUR
684+0.1 EUR
916+0.078 EUR
1153+0.062 EUR
1367+0.052 EUR
1690+0.042 EUR
1786+0.04 EUR
Mindestbestellmenge: 250
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IPB65R099C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EE217E26F1BF&compId=IPB65R099C6-DTE.pdf?ci_sign=715c1f68c860329bf7686cf793fb138854a750db
IPB65R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPI65R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8EF625A16D1BF&compId=IPI65R099C6-DTE.pdf?ci_sign=b7ecdbd0817188c32fbc3bd9e75ec036c5cb4a3a
IPI65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB914862BA111BF&compId=IPL65R099C7-DTE.pdf?ci_sign=6b815f4bb7536f080aad6f5d4850b9f64b26de1b
IPL65R099C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB944D4022D91BF&compId=IPP65R099C6-DTE.pdf?ci_sign=59108e7d9ce3a0b6f5caf391c2a545255e688e7a
IPP65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6404WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: double series
Type of diode: Schottky rectifying
auf Bestellung 4145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
404+0.18 EUR
470+0.15 EUR
532+0.13 EUR
599+0.12 EUR
838+0.085 EUR
887+0.081 EUR
1000+0.079 EUR
3000+0.078 EUR
Mindestbestellmenge: 295
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BAT6406WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E04FE3CA160469&compId=BAT6402VH6327XTSA1.pdf?ci_sign=5bc3a6a2b874d3973f414412e4bd672e156e0d01
BAT6406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky rectifying
auf Bestellung 10240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
782+0.092 EUR
848+0.084 EUR
3000+0.083 EUR
Mindestbestellmenge: 264
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Produkt ist nicht verfügbar
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BAS7004WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7004WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: Schottky switching
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
451+0.16 EUR
685+0.1 EUR
969+0.074 EUR
1025+0.07 EUR
Mindestbestellmenge: 295
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IRFS7734TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBF008A81DDA143&compId=IRFS7734TRLPBF.pdf?ci_sign=378c073419cbee0051b53b13427597d9b9d84be5
IRFS7734TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
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