Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151638) > Seite 2502 nach 2528
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FF200R12KE4PHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |
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FP100R12KT4B11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W Pulsed collector current: 200A Power dissipation: 515W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EconoPIM™ 3 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Case: AG-ECONO3-3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A |
Produkt ist nicht verfügbar |
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BTS724G | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Mounting: SMD Output current: 3.3...7.3A Case: SO20 Supply voltage: 5.5...40V DC Technology: Classic PROFET Kind of output: N-Channel On-state resistance: 22.5mΩ Number of channels: 4 |
auf Bestellung 797 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 52W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IDW100E60FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Case: TO247-3 |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR141E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Frequency: 130MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 5139 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP048N12N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 120V Drain current: 120A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLTS6342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhancement Drain-source voltage: 30V Drain current: 8.3A |
auf Bestellung 613 Stücke: Lieferzeit 14-21 Tag (e) |
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DDB6U205N16LHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw Case: AG-ISOPACK Electrical mounting: screw Leads: M5 screws Version: module Load current: 205A Max. forward voltage: 1.47V Max. forward impulse current: 1.375kA Max. off-state voltage: 1.6kV Type of bridge rectifier: three-phase |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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ITS4141NHUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.2Ω Kind of package: reel; tape Supply voltage: 12...45V DC Turn-off time: 0.1ms Power dissipation: 1.4W Technology: Industrial PROFET Turn-on time: 150µs Operating temperature: -30...85°C |
auf Bestellung 2423 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS3405G | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET® On-state resistance: 0.35Ω Output voltage: 10V Output current: 0.35A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Technology: HITFET® Kind of integrated circuit: low-side Mounting: SMD Case: PG-DSO-8-25 |
auf Bestellung 2209 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT1704E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: double series Power dissipation: 0.15W |
auf Bestellung 2799 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ105N04NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8 Type of transistor: N-MOSFET Kind of channel: enhancement Technology: OptiMOS™ 3 Mounting: SMD Polarisation: unipolar Gate charge: 13nC On-state resistance: 10.5mΩ Gate-source voltage: ±20V Drain current: 29A Power dissipation: 35W Drain-source voltage: 40V Case: PG-TSDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCR112E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
auf Bestellung 5548 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR148E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 100MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 6865 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR185E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 3040 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL024ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Power dissipation: 2.8W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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CY15B004J-SXA | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Supply voltage: 2.7...3.65V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 1MHz Memory: 4kb FRAM |
Produkt ist nicht verfügbar |
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CY15B004J-SXAT | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Case: SOIC8 Supply voltage: 2.7...3.65V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 1MHz Kind of package: reel; tape Memory: 4kb FRAM |
Produkt ist nicht verfügbar |
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CY15B004J-SXE | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8 Mounting: SMD Operating temperature: -40...125°C Case: SOIC8 Supply voltage: 3...3.6V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 3.4MHz Memory: 4kb FRAM |
Produkt ist nicht verfügbar |
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CY15B004J-SXET | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8 Mounting: SMD Operating temperature: -40...125°C Case: SOIC8 Supply voltage: 3...3.6V DC Type of integrated circuit: FRAM memory Interface: I2C Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 3.4MHz Kind of package: reel; tape Memory: 4kb FRAM |
Produkt ist nicht verfügbar |
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CY15B004Q-SXET | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8 Mounting: SMD Operating temperature: -40...125°C Case: SOIC8 Supply voltage: 3...3.6V DC Type of integrated circuit: FRAM memory Interface: SPI Kind of memory: FRAM Memory organisation: 512x8bit Clock frequency: 16MHz Kind of package: reel; tape Memory: 4kb FRAM |
Produkt ist nicht verfügbar |
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ICE5QR2280AZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80% Operating temperature: -40...150°C Case: DIP7 Power: 41/22W Operating voltage: 10...25.5V DC Frequency: 20kHz Breakdown voltage: 800V Output current: 0.4A Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Input voltage: 80...265V Duty cycle factor: 0...80% Kind of integrated circuit: PWM controller Topology: flyback Mounting: THT |
Produkt ist nicht verfügbar |
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BTS500101TAEATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 40A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO263-7-10 On-state resistance: 1.6mΩ Supply voltage: 8...18V DC Technology: Power PROFET |
Produkt ist nicht verfügbar |
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BTS50085-1TMA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO220-7-4 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS4007WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW Power dissipation: 0.25W Case: SOT343 Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Max. off-state voltage: 40V Semiconductor structure: double independent Type of diode: Schottky switching |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3915TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 61A Power dissipation: 120W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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BA885E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Max. off-state voltage: 50V Load current: 50mA Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.19...0.45pF Leakage current: 20nA |
auf Bestellung 1213 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC109N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8 Mounting: SMD On-state resistance: 10.9mΩ Drain current: 63A Gate-source voltage: ±20V Power dissipation: 78W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BAS7005WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 70mA Max. forward impulse current: 0.1A Max. off-state voltage: 70V Semiconductor structure: common cathode; double Type of diode: Schottky switching |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3805PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 220A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Kind of channel: enhancement Gate charge: 0.19µC Kind of package: tube |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF3805STRL-7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 240A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
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IRF3610STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 0.1µC Kind of package: reel |
Produkt ist nicht verfügbar |
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TLE7258SJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C Kind of package: reel; tape DC supply current: 3mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 5.5...18V DC Interface: LIN |
auf Bestellung 2416 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB035N08N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 3.5mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 |
Produkt ist nicht verfügbar |
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BSC105N10LSFGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8 Mounting: SMD On-state resistance: 10.5mΩ Drain current: 90A Gate-source voltage: ±20V Power dissipation: 156W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 2 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
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IRF40R207 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 64A Power dissipation: 83W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 45nC |
auf Bestellung 1421 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF40B207 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 67A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 45nC |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4104SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 68nC |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF40H233XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W Type of transistor: N-MOSFET x2 Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 32A Pulsed drain current: 140A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIRF4104STRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 68nC Kind of package: reel |
Produkt ist nicht verfügbar |
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IPA029N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP Drain-source voltage: 60V Drain current: 62A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 348A Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
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IPA029N06NXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP Drain-source voltage: 60V Drain current: 84A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
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S29AL016J55BFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
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S29AL016J55FFAR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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S29AL016J55TFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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S29AL016J55TFIR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL016J55TFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CY62138FV30LL-45ZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel Mounting: SMD Supply voltage: 2.2...3.6V DC Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx8bit Access time: 45ns Kind of package: in-tray Kind of interface: parallel Memory: 2Mb SRAM Operating temperature: -40...85°C Case: TSOP32 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IPP60R060P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPW60R190E6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IPDD60R190G7XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A Type of transistor: N-MOSFET Technology: CoolMOS™ G7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 76W Case: PG-HDSOP-10-1 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 18nC Pulsed drain current: 36A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IPP60R022S7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Drain-source voltage: 600V Drain current: 23A On-state resistance: 47mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Technology: CoolMOS™ S7 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 375A Mounting: THT Case: TO220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BBY5502VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA Leakage current: 0.1µA Load current: 20mA Capacitance: 5.5...19.6pF Type of diode: varicap Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Max. off-state voltage: 16V Case: SC79 |
auf Bestellung 2038 Stücke: Lieferzeit 14-21 Tag (e) |
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IPZ40N04S53R1ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 71W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPZ40N04S5-5R4 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 48W Polarisation: unipolar Gate charge: 23nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPZ40N04S5-8R4 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 9.9mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 34W Polarisation: unipolar Gate charge: 13.7nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPZ40N04S5L-2R8 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Case: PG-TSDSON-8 Mounting: SMD Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 71W Polarisation: unipolar Gate charge: 52nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
FF200R12KE4PHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FP100R12KT4B11BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Pulsed collector current: 200A
Power dissipation: 515W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS724G |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Output current: 3.3...7.3A
Case: SO20
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of output: N-Channel
On-state resistance: 22.5mΩ
Number of channels: 4
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Output current: 3.3...7.3A
Case: SO20
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of output: N-Channel
On-state resistance: 22.5mΩ
Number of channels: 4
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.81 EUR |
17+ | 4.26 EUR |
18+ | 4.03 EUR |
50+ | 3.98 EUR |
100+ | 3.88 EUR |
BSZ034N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDW100E60FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.45 EUR |
29+ | 2.46 EUR |
BCR141E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 5139 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
228+ | 0.31 EUR |
371+ | 0.19 EUR |
439+ | 0.16 EUR |
637+ | 0.11 EUR |
1382+ | 0.052 EUR |
1458+ | 0.049 EUR |
IPP048N12N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.82 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
100+ | 2.45 EUR |
IRLTS6342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 30V
Drain current: 8.3A
auf Bestellung 613 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
163+ | 0.44 EUR |
193+ | 0.37 EUR |
222+ | 0.32 EUR |
253+ | 0.28 EUR |
268+ | 0.27 EUR |
274+ | 0.26 EUR |
DDB6U205N16LHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Leads: M5 screws
Version: module
Load current: 205A
Max. forward voltage: 1.47V
Max. forward impulse current: 1.375kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Leads: M5 screws
Version: module
Load current: 205A
Max. forward voltage: 1.47V
Max. forward impulse current: 1.375kA
Max. off-state voltage: 1.6kV
Type of bridge rectifier: three-phase
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 278.85 EUR |
ITS4141NHUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
Turn-on time: 150µs
Operating temperature: -30...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
Turn-on time: 150µs
Operating temperature: -30...85°C
auf Bestellung 2423 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 1.99 EUR |
49+ | 1.47 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
100+ | 1.22 EUR |
BTS3405G |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
On-state resistance: 0.35Ω
Output voltage: 10V
Output current: 0.35A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8-25
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
On-state resistance: 0.35Ω
Output voltage: 10V
Output current: 0.35A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8-25
auf Bestellung 2209 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.92 EUR |
39+ | 1.87 EUR |
47+ | 1.54 EUR |
50+ | 1.46 EUR |
100+ | 1.42 EUR |
BAT1704E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
auf Bestellung 2799 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
338+ | 0.21 EUR |
388+ | 0.18 EUR |
455+ | 0.16 EUR |
550+ | 0.13 EUR |
589+ | 0.12 EUR |
BSS83PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
240+ | 0.3 EUR |
BSZ105N04NSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 10.5mΩ
Gate-source voltage: ±20V
Drain current: 29A
Power dissipation: 35W
Drain-source voltage: 40V
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Kind of channel: enhancement
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 10.5mΩ
Gate-source voltage: ±20V
Drain current: 29A
Power dissipation: 35W
Drain-source voltage: 40V
Case: PG-TSDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR112E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 5548 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
582+ | 0.12 EUR |
695+ | 0.1 EUR |
799+ | 0.09 EUR |
918+ | 0.078 EUR |
1087+ | 0.066 EUR |
1608+ | 0.044 EUR |
1701+ | 0.042 EUR |
BCR148E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 6865 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
731+ | 0.098 EUR |
812+ | 0.088 EUR |
1060+ | 0.067 EUR |
1122+ | 0.064 EUR |
3000+ | 0.063 EUR |
BCR185E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 3040 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1117+ | 0.064 EUR |
1238+ | 0.058 EUR |
1401+ | 0.051 EUR |
1619+ | 0.044 EUR |
IRFL024ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B004J-SXA |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Memory: 4kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B004J-SXAT |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B004J-SXE |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B004J-SXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY15B004Q-SXET |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE5QR2280AZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating temperature: -40...150°C
Case: DIP7
Power: 41/22W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 800V
Output current: 0.4A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating temperature: -40...150°C
Case: DIP7
Power: 41/22W
Operating voltage: 10...25.5V DC
Frequency: 20kHz
Breakdown voltage: 800V
Output current: 0.4A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS500101TAEATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS50085-1TMA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.38 EUR |
11+ | 6.82 EUR |
12+ | 6.45 EUR |
100+ | 6.19 EUR |
BAS4007WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
253+ | 0.28 EUR |
288+ | 0.25 EUR |
458+ | 0.16 EUR |
842+ | 0.085 EUR |
892+ | 0.08 EUR |
IRLR3915TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BA885E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.19...0.45pF
Leakage current: 20nA
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1064+ | 0.067 EUR |
1087+ | 0.066 EUR |
BSC109N10NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH7084TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS7005WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
363+ | 0.2 EUR |
482+ | 0.15 EUR |
554+ | 0.13 EUR |
1250+ | 0.057 EUR |
1323+ | 0.054 EUR |
IRF3805PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.19µC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.19µC
Kind of package: tube
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.13 EUR |
32+ | 2.29 EUR |
34+ | 2.16 EUR |
IRF3805STRL-7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF3610STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.1µC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.1µC
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE7258SJXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
87+ | 0.83 EUR |
95+ | 0.76 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
IPB035N08N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC105N10LSFGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Power dissipation: 156W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Power dissipation: 156W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF40R207 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 1421 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 0.84 EUR |
108+ | 0.67 EUR |
177+ | 0.4 EUR |
187+ | 0.38 EUR |
IRF40B207 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
IRF4104SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IRF40H233XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF4104STRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA029N06NM5SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 348A
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 348A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPA029N06NXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL016J55BFIR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL016J55FFAR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL016J55TFI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL016J55TFIR10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL016J55TFIR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY62138FV30LL-45ZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R060P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R190E6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPDD60R190G7XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 36A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R022S7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 375A
Mounting: THT
Case: TO220
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 375A
Mounting: THT
Case: TO220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BBY5502VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Leakage current: 0.1µA
Load current: 20mA
Capacitance: 5.5...19.6pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 16V
Case: SC79
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Leakage current: 0.1µA
Load current: 20mA
Capacitance: 5.5...19.6pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 16V
Case: SC79
auf Bestellung 2038 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
207+ | 0.35 EUR |
219+ | 0.33 EUR |
234+ | 0.31 EUR |
254+ | 0.28 EUR |
269+ | 0.27 EUR |
IPZ40N04S53R1ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZ40N04S5-5R4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 23nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 48W
Polarisation: unipolar
Gate charge: 23nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZ40N04S5-8R4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 13.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 34W
Polarisation: unipolar
Gate charge: 13.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZ40N04S5L-2R8 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Gate charge: 52nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 71W
Polarisation: unipolar
Gate charge: 52nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH