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IRF7907TRPBF IRF7907TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AD5F7E0845F1A303005056AB0C4F&compId=irf7907pbf.pdf?ci_sign=8c75e043f648f14b9ecbd918ee292e23b6848222 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.1A; 2W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 9.1A
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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ICE2HS01G ICE2HS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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CY7C25652KV18-500BZXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Operating temperature: 0...70°C
Case: FBGA165
Supply voltage: 1.7...1.9V DC
Frequency: 500MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.63 EUR
Mindestbestellmenge: 5000
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BB439E6327HTSA1 BB439E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B38767005E27&compId=BB439-DTE.pdf?ci_sign=360554e1b6e733f8b3fda7fe5ed458dcb6822e7f Category: Diodes - others
Description: Diode: varicap; 28V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 28V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 5.1...53pF
Produkt ist nicht verfügbar
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ETT540N22P60HPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF5BECB9EB618BF&compId=ETD540N22P60_ETT540N22P60.pdf?ci_sign=7dde4d2a75d65a9ef62c31dbf4bd98fe87ec22df Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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ISP762T ISP762T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A76A684FE469&compId=ISP762T.pdf?ci_sign=e0597ca21b92fe458fc569c6684cec42314bdc9c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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XMC1402F064X0200AAXUMA1 XMC1402F064X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
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IPB60R099C7ATMA1 IPB60R099C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA35F472CB8A143&compId=IPB60R099C7.pdf?ci_sign=5b859999261ebe71403a2659df15f5a9bde9af22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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IPB60R099C6 IPB60R099C6 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD662169E3F15EA&compId=IPB60R099C6.pdf?ci_sign=c6af9003cab4e14e02e5a5f3bf2338d2b3d861b2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB60R099C6ATMA1 IPB60R099C6ATMA1 INFINEON TECHNOLOGIES IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB60R099CPATMA1 IPB60R099CPATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5940C9F8767D1BF&compId=IPB60R099CP-DTE.pdf?ci_sign=91df3639930d1c43c70ea91f5cce18895b2c649f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
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IPB60R099P7ATMA1 IPB60R099P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681590A50E853D6&compId=IPB60R099P7.pdf?ci_sign=4f9f109175388cc4f13a7e7bb32b6c0f37f0bb07 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
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IPB60R099CPAATMA1 INFINEON TECHNOLOGIES Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+6.12 EUR
Mindestbestellmenge: 1000
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IRF7504TRPBF IRF7504TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A68E7FB51CF1A303005056AB0C4F&compId=irf7504pbf.pdf?ci_sign=93ed01114c3194e4bd10e4451c4a0ace3b64b097 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7503TRPBF IRF7503TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A66A5A9519F1A303005056AB0C4F&compId=irf7503pbf.pdf?ci_sign=bdb7ae8ebb62044e85cce1427c39fefdef9eba5c Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7506TRPBF IRF7506TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A6AACD631FF1A303005056AB0C4F&compId=irf7506pbf.pdf?ci_sign=5ad3e8aedd62bd3f4fd506ca509f40df342a54ad Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Kind of package: reel
Case: SO8
Drain-source voltage: -30V
Drain current: -1.7A
Type of transistor: P-MOSFET x2
Power dissipation: 1.25W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59457F5CAAA71BF&compId=IPP60R099CP-DTE.pdf?ci_sign=58cf3965cfc8109487e20bd8d33b892067a49653 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.82 EUR
10+7.18 EUR
11+6.79 EUR
Mindestbestellmenge: 9
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TD500N16KOFHPSA1 TD500N16KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF TD500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
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TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N16KOFHPSA2 TT500N16KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ600N16KOF TZ600N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N16KOF TZ500N16KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1666133B1A259&compId=IPD80R1K4P7.pdf?ci_sign=6b2571a0111d4343dd05c0fe97dac72608ab0bed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
79+0.92 EUR
95+0.76 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 68
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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB9CAFC0364143&compId=IPU80R1K4P7.pdf?ci_sign=6ace7a65f867c52cbfecf47f0c7e7e4b71b3378b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1204 Stücke:
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52+1.4 EUR
93+0.78 EUR
132+0.54 EUR
139+0.51 EUR
525+0.49 EUR
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IPA80R1K4P7XKSA1 IPA80R1K4P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 8.9A
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IPD80R1K4CEATMA1 IPD80R1K4CEATMA1 INFINEON TECHNOLOGIES Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
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IPA80R1K4CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
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100+1.07 EUR
Mindestbestellmenge: 100
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IRFR5410TRRPBF IRFR5410TRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BCR191E6327 BCR191E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Case: SOT23
auf Bestellung 325 Stücke:
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IRF8010PBF IRF8010PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 81nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
auf Bestellung 159 Stücke:
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49+1.49 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 35
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IRF8010STRLPBF IRF8010STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AD9BA81268F1A303005056AB0C4F&compId=irf8010spbf.pdf?ci_sign=96016d20f638b230a1eae1ea6fde48bebe5d8df7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R1K5C6SATMA1 IPL65R1K5C6SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91E6123DFF1BF&compId=IPL65R1K5C6S-DTE.pdf?ci_sign=969cf8172b02fdcd0df90401c7352a0acdf47886 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 650V
Drain current: 3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 26.6W
auf Bestellung 6 Stücke:
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IPL60R075CFD7 IPL60R075CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA76F5DF84074A&compId=IPL60R075CFD7.pdf?ci_sign=bbf5bff69a5a7dcb91600f1953d938f86b5570fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IPL60R185CFD7 IPL60R185CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA79288AD9474A&compId=IPL60R185CFD7.pdf?ci_sign=df1f1430705f9786b7e98cac63b1815eb4e8f571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 0.346Ω
Type of transistor: N-MOSFET
Power dissipation: 85W
Produkt ist nicht verfügbar
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IPL60R1K5C6SATMA1 IPL60R1K5C6SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594377B2964B1BF&compId=IPL60R1K5C6S-DTE.pdf?ci_sign=8b7408cd5f723bebcbd583b98198e4134795f77c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 26.6W
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5943BF09687B1BF&compId=IPL60R385CP-DTE.pdf?ci_sign=2482a8efbae735912a57ce4d494599f7ef5a1ea3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 0.385Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Produkt ist nicht verfügbar
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IPL65R165CFDAUMA1 IPL65R165CFDAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91904138191BF&compId=IPL65R165CFD-DTE.pdf?ci_sign=901d28ab02ff3f6e0f1edb6b3fcc7b5ae2b6d7b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 650V
Drain current: 21.3A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Produkt ist nicht verfügbar
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IPL65R195C7AUMA1 IPL65R195C7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91BEE8C4DB1BF&compId=IPL65R195C7-DTE.pdf?ci_sign=d0defed3728ddff30a99901918b4adcfa4edc9f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 75W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.195Ω
Type of transistor: N-MOSFET
Power dissipation: 75W
Produkt ist nicht verfügbar
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IPN50R800CEATMA1 IPN50R800CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5E1D6F7216143&compId=IPN50R800CE.pdf?ci_sign=accad286030e42619725ab62412467d686624c67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhancement
auf Bestellung 2903 Stücke:
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117+0.61 EUR
127+0.57 EUR
Mindestbestellmenge: 93
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IPA90R800C3XKSA1 IPA90R800C3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC576DF2E1ACFA8&compId=IPA90R800C3XKSA1-DTE.pdf?ci_sign=22df4d4f3cd156b1c1ba07996da465bfa95d0489 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW90R800C3FKSA1 IPW90R800C3FKSA1 INFINEON TECHNOLOGIES IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1383KV33-133AXC INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Case: SUPER247
Mounting: THT
Kind of package: tube
Collector current: 99A
Type of transistor: IGBT
Power dissipation: 350W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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S25FL064LABMFA010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S70FL01GSAGMFA010 INFINEON TECHNOLOGIES 002-00466%20Rev%20J.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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BTS3046SDRATMA1 INFINEON TECHNOLOGIES Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
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2500+1.6 EUR
Mindestbestellmenge: 2500
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BTS3028SDRATMA1 INFINEON TECHNOLOGIES Infineon-BTS3028SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad822a204c25 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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2500+2 EUR
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IR21834STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+2.1 EUR
Mindestbestellmenge: 2500
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A8BF1A6F5005056AB5A8F&compId=irfs52n15d.pdf?ci_sign=dd3f590212d2c22ca8bc1539635902e7d0156b8c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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22+3.27 EUR
37+1.97 EUR
39+1.87 EUR
Mindestbestellmenge: 22
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IGCM04G60HAXKMA1 IGCM04G60HAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACC01A37E9D3D7&compId=IGCM04G60HA.pdf?ci_sign=7d15329436abe701c9bb6bb687929afe58344d0a Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.75 EUR
10+7.48 EUR
11+7.06 EUR
Mindestbestellmenge: 8
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IRF7907TRPBF pVersion=0046&contRep=ZT&docId=E221AD5F7E0845F1A303005056AB0C4F&compId=irf7907pbf.pdf?ci_sign=8c75e043f648f14b9ecbd918ee292e23b6848222
IRF7907TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.1A; 2W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 9.1A
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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ICE2HS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381
ICE2HS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 0.03...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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BSZ180P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A7635D7851CC&compId=BSZ180P03NS3EGATMA-DTE.pdf?ci_sign=971d97016924af893a513ca586abb1484fedd47a
BSZ180P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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BSZ180P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92A83237A3D1CC&compId=BSZ180P03NS3GATMA1-DTE.pdf?ci_sign=304a2011c07782bc019c3f0265e7929ef67a4796
BSZ180P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Produkt ist nicht verfügbar
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CY7C25652KV18-500BZXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Operating temperature: 0...70°C
Case: FBGA165
Supply voltage: 1.7...1.9V DC
Frequency: 500MHz
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray
Kind of interface: parallel
Memory: 72Mb SRAM
Mounting: SMD
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.63 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BB439E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999B38767005E27&compId=BB439-DTE.pdf?ci_sign=360554e1b6e733f8b3fda7fe5ed458dcb6822e7f
BB439E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 28V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 28V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 5.1...53pF
Produkt ist nicht verfügbar
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ETT540N22P60HPSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF5BECB9EB618BF&compId=ETD540N22P60_ETT540N22P60.pdf?ci_sign=7dde4d2a75d65a9ef62c31dbf4bd98fe87ec22df
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Produkt ist nicht verfügbar
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ISP762T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A76A684FE469&compId=ISP762T.pdf?ci_sign=e0597ca21b92fe458fc569c6684cec42314bdc9c
ISP762T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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XMC1402F064X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1402F064X0200AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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IPB60R099C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA35F472CB8A143&compId=IPB60R099C7.pdf?ci_sign=5b859999261ebe71403a2659df15f5a9bde9af22
IPB60R099C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R099C6 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD662169E3F15EA&compId=IPB60R099C6.pdf?ci_sign=c6af9003cab4e14e02e5a5f3bf2338d2b3d861b2
IPB60R099C6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R099C6ATMA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPB60R099C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R099CPATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5940C9F8767D1BF&compId=IPB60R099CP-DTE.pdf?ci_sign=91df3639930d1c43c70ea91f5cce18895b2c649f
IPB60R099CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB60R099P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681590A50E853D6&compId=IPB60R099P7.pdf?ci_sign=4f9f109175388cc4f13a7e7bb32b6c0f37f0bb07
IPB60R099P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+6.12 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRF7504TRPBF pVersion=0046&contRep=ZT&docId=E221A68E7FB51CF1A303005056AB0C4F&compId=irf7504pbf.pdf?ci_sign=93ed01114c3194e4bd10e4451c4a0ace3b64b097
IRF7504TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7503TRPBF pVersion=0046&contRep=ZT&docId=E221A66A5A9519F1A303005056AB0C4F&compId=irf7503pbf.pdf?ci_sign=bdb7ae8ebb62044e85cce1427c39fefdef9eba5c
IRF7503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7506TRPBF pVersion=0046&contRep=ZT&docId=E221A6AACD631FF1A303005056AB0C4F&compId=irf7506pbf.pdf?ci_sign=5ad3e8aedd62bd3f4fd506ca509f40df342a54ad
IRF7506TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Kind of package: reel
Case: SO8
Drain-source voltage: -30V
Drain current: -1.7A
Type of transistor: P-MOSFET x2
Power dissipation: 1.25W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59457F5CAAA71BF&compId=IPP60R099CP-DTE.pdf?ci_sign=58cf3965cfc8109487e20bd8d33b892067a49653
IPP60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.82 EUR
10+7.18 EUR
11+6.79 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TD500N16KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F074C00DE6469&compId=TD500N16KOF.pdf?ci_sign=a76074aa4c25a809d85ac6baf5ea26212c9adddb
TD500N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TD500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859F09F7C6E98469&compId=TD500N18KOF.pdf?ci_sign=b5a5084591cd6c5813d9dbba92c7a98591c03055
TD500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 500A; BG-PB60AT-1; Ufmax: 1.45V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 900A
Produkt ist nicht verfügbar
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TT570N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEA028F7668469&compId=TT570N16KOF.pdf?ci_sign=836c3171bb9fd8f725f7e3605bd91df313dc3657
TT570N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ500N18KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEDB421FFB2469&compId=TZ500N18KOF.pdf?ci_sign=f3bce80d1edaa89ee6344fdd3d38926f29f3b8f8
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT500N16KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9BDBDF1BC469&compId=TT500N16KOF.pdf?ci_sign=34f28fc7e78abf45d9c7c865df8bb681c3dbe1e0
TT500N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TZ600N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEE563BB628469&compId=TZ600N16KOF.pdf?ci_sign=771810b9df81adea268ef9a17ac11c2ffb879b45
TZ600N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT500N14KOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE9A079D1DE469&compId=TT500N14KOF.pdf?ci_sign=b0aadc52c9d5d3fdf46bc40fc9a88cd19f84b3f5
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N16KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CED8FCD3EB6469&compId=TZ500N16KOF.pdf?ci_sign=e342fac28e657edb4f639ad89f6a091993a51e35
TZ500N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD80R1K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1666133B1A259&compId=IPD80R1K4P7.pdf?ci_sign=6b2571a0111d4343dd05c0fe97dac72608ab0bed
IPD80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
79+0.92 EUR
95+0.76 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 68
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IPU80R1K4P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB9CAFC0364143&compId=IPU80R1K4P7.pdf?ci_sign=6ace7a65f867c52cbfecf47f0c7e7e4b71b3378b
IPU80R1K4P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
93+0.78 EUR
132+0.54 EUR
139+0.51 EUR
525+0.49 EUR
Mindestbestellmenge: 52
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IPA80R1K4P7XKSA1 Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c
IPA80R1K4P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 8.9A
Produkt ist nicht verfügbar
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IPD80R1K4CEATMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPD80R1K4CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA80R1K4CEXKSA2 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.07 EUR
Mindestbestellmenge: 100
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IRFR5410TRRPBF pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831
IRFR5410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR191E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C577575678A469&compId=BCR191.pdf?ci_sign=95bdeac9f9d591f952a3f1e72481882e571b369f
BCR191E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 22kΩ
Mounting: SMD
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Case: SOT23
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.21 EUR
Mindestbestellmenge: 325
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IRF8010PBF description pVersion=0046&contRep=ZT&docId=E1C04E531D852BF1A6F5005056AB5A8F&compId=irf8010.pdf?ci_sign=d280f417751b4795fda78b32f97b3dbddff52aba
IRF8010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 81nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
49+1.49 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 35
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IRF8010STRLPBF pVersion=0046&contRep=ZT&docId=E221AD9BA81268F1A303005056AB0C4F&compId=irf8010spbf.pdf?ci_sign=96016d20f638b230a1eae1ea6fde48bebe5d8df7
IRF8010STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R1K5C6SATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91E6123DFF1BF&compId=IPL65R1K5C6S-DTE.pdf?ci_sign=969cf8172b02fdcd0df90401c7352a0acdf47886
IPL65R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 26.6W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 650V
Drain current: 3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 26.6W
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IPL60R075CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA76F5DF84074A&compId=IPL60R075CFD7.pdf?ci_sign=bbf5bff69a5a7dcb91600f1953d938f86b5570fa
IPL60R075CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-VSON-4
Produkt ist nicht verfügbar
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IPL60R185CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA79288AD9474A&compId=IPL60R185CFD7.pdf?ci_sign=df1f1430705f9786b7e98cac63b1815eb4e8f571
IPL60R185CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 0.346Ω
Type of transistor: N-MOSFET
Power dissipation: 85W
Produkt ist nicht verfügbar
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IPL60R1K5C6SATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594377B2964B1BF&compId=IPL60R1K5C6S-DTE.pdf?ci_sign=8b7408cd5f723bebcbd583b98198e4134795f77c
IPL60R1K5C6SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 26.6W
Produkt ist nicht verfügbar
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IPL60R385CPAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5943BF09687B1BF&compId=IPL60R385CP-DTE.pdf?ci_sign=2482a8efbae735912a57ce4d494599f7ef5a1ea3
IPL60R385CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 0.385Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Produkt ist nicht verfügbar
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IPL65R165CFDAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91904138191BF&compId=IPL65R165CFD-DTE.pdf?ci_sign=901d28ab02ff3f6e0f1edb6b3fcc7b5ae2b6d7b4
IPL65R165CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 650V
Drain current: 21.3A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Produkt ist nicht verfügbar
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IPL65R195C7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB91BEE8C4DB1BF&compId=IPL65R195C7-DTE.pdf?ci_sign=d0defed3728ddff30a99901918b4adcfa4edc9f4
IPL65R195C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 75W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.195Ω
Type of transistor: N-MOSFET
Power dissipation: 75W
Produkt ist nicht verfügbar
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IPN50R800CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA5E1D6F7216143&compId=IPN50R800CE.pdf?ci_sign=accad286030e42619725ab62412467d686624c67
IPN50R800CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhancement
auf Bestellung 2903 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
117+0.61 EUR
127+0.57 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
IPA90R800C3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC576DF2E1ACFA8&compId=IPA90R800C3XKSA1-DTE.pdf?ci_sign=22df4d4f3cd156b1c1ba07996da465bfa95d0489
IPA90R800C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW90R800C3FKSA1 IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095
IPW90R800C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1383KV33-133AXC Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRG4PSH71UDPBF description pVersion=0046&contRep=ZT&docId=E221D7D64A4F08F1A303005056AB0C4F&compId=irg4psh71udpbf.pdf?ci_sign=289c39444487fc58635bd7d1764bde616b177c4c
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Case: SUPER247
Mounting: THT
Kind of package: tube
Collector current: 99A
Type of transistor: IGBT
Power dissipation: 350W
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABMFA013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S25FL128LAGMFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFA010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FL01GSAGMFA010 002-00466%20Rev%20J.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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BTS3046SDRATMA1 Infineon-BTS3046SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad820ee64c1d
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.6 EUR
Mindestbestellmenge: 2500
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BTS3028SDRATMA1 Infineon-BTS3028SDR-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad822a204c25
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2 EUR
Mindestbestellmenge: 2500
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IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.1 EUR
Mindestbestellmenge: 2500
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IRFB52N15DPBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A8BF1A6F5005056AB5A8F&compId=irfs52n15d.pdf?ci_sign=dd3f590212d2c22ca8bc1539635902e7d0156b8c
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
37+1.97 EUR
39+1.87 EUR
Mindestbestellmenge: 22
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IGCM04G60HAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACC01A37E9D3D7&compId=IGCM04G60HA.pdf?ci_sign=7d15329436abe701c9bb6bb687929afe58344d0a
IGCM04G60HAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Operating temperature: -40...125°C
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge
Voltage class: 600V
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -4...4A
Type of integrated circuit: driver
Power dissipation: 21.8W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.75 EUR
10+7.48 EUR
11+7.06 EUR
Mindestbestellmenge: 8
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