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FM25L04B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Produkt ist nicht verfügbar
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FM25V05-GTR INFINEON TECHNOLOGIES Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Produkt ist nicht verfügbar
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FM25V10-DG INFINEON TECHNOLOGIES Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Produkt ist nicht verfügbar
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S25FL128LAGNFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: WSON8
Produkt ist nicht verfügbar
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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 2208 Stücke:
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167+0.43 EUR
209+0.34 EUR
Mindestbestellmenge: 167
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IRFSL7440PBF IRFSL7440PBF INFINEON TECHNOLOGIES irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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CY62168EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=50111 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62168EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C0C542C2A11C&compId=BFQ19SH6327XTSA1-dte.pdf?ci_sign=308d2c563328e90936001c00c9e93dc4a527b52a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
147+0.49 EUR
161+0.44 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 100
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IRFSL4510PBF IRFSL4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 107W
Case: PG-TO220-3
Mounting: THT
Drain current: 13.3A
On-state resistance: 0.1Ω
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 250V
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.43 EUR
31+2.32 EUR
33+2.19 EUR
Mindestbestellmenge: 30
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TLE4946KHTSA1 INFINEON TECHNOLOGIES TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
Produkt ist nicht verfügbar
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
47+1.54 EUR
50+1.44 EUR
57+1.26 EUR
60+1.2 EUR
75+1.14 EUR
Mindestbestellmenge: 42
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TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE521B282F6469&compId=TT210N12KOF.pdf?ci_sign=f7eaf7806bc8e7ae42f1597e6f4e3ad04450ee9d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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1+108.68 EUR
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IRF6218STRLPBF IRF6218STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F676E2293A6F1A303005056AB0C4F&compId=irf6218spbf.pdf?ci_sign=b2d854f32eaee6ca2234c84bf89ef10ff97de354 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLP3034PBF IRLP3034PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58261FF1A6F5005056AB5A8F&compId=irlp3034pbf.pdf?ci_sign=9128909fc18795a56482a4b00afac011ad104a23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Drain-source voltage: 40V
Drain current: 327A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 341W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 108nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
auf Bestellung 15 Stücke:
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12+6.33 EUR
15+4.76 EUR
Mindestbestellmenge: 12
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IRFP7430PBF IRFP7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEB797742D5EA&compId=IRFP7430PBF.pdf?ci_sign=00881c1d66098117f06e4885f5e79cb15cc02fd0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Kind of package: tube
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Gate charge: 300nC
On-state resistance: 1.3mΩ
Power dissipation: 366W
Drain current: 404A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 46 Stücke:
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25+2.92 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 25
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IR2118PBF IR2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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S29AL008J55BFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55BFIR22 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BAN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFI022 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFM023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70TFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70TFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1076 Stücke:
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35+2.1 EUR
45+1.6 EUR
51+1.42 EUR
66+1.09 EUR
70+1.03 EUR
100+0.99 EUR
Mindestbestellmenge: 35
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BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
auf Bestellung 2570 Stücke:
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200+0.36 EUR
262+0.27 EUR
391+0.18 EUR
633+0.11 EUR
Mindestbestellmenge: 200
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IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
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1+262.12 EUR
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BSC120N03LSGATMA1 BSC120N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSC120N03MSGATMA1 BSC120N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CC80C8AA211C&compId=BFP193WH6327-dte.pdf?ci_sign=898db4222a12e69935131f5ce32c7e5cd5bcd476 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
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IPB80N06S405ATMA2 INFINEON TECHNOLOGIES Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 2132 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
73+0.99 EUR
75+0.96 EUR
77+0.93 EUR
80+0.9 EUR
81+0.89 EUR
100+0.87 EUR
Mindestbestellmenge: 50
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IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373 Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Supply voltage: 1.6...18V DC
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: SOT343
Power: 0.33W
Integrated circuit features: active bias controller
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264+0.27 EUR
334+0.21 EUR
374+0.19 EUR
428+0.17 EUR
468+0.15 EUR
500+0.14 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 264
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IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E95E936085211C&compId=IPP034NE7N3G-DTE.pdf?ci_sign=8d0e6de0bd6b07ddb826b41cbddb3eb2f3531bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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19+3.86 EUR
22+3.4 EUR
24+2.97 EUR
Mindestbestellmenge: 19
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA789EA0C3611C&compId=IPB017N10N5-DTE.pdf?ci_sign=0831c35b1695eacb56b73ab26680094032011dbd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.53 EUR
23+3.12 EUR
25+2.89 EUR
Mindestbestellmenge: 21
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1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Supply voltage: 3...3.5V; 6.5...20V
Produkt ist nicht verfügbar
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™; GaN
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape
Gate charge: 5.8nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Pulsed drain current: 60A
Gate-source voltage: -10V
Mounting: SMD
Case: PG-DSO-20
Gate current: 20mA
Drain-source voltage: 600V
Drain current: 31A
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
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FM25L04B-DGTR Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Produkt ist nicht verfügbar
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FM25V05-GTR Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Produkt ist nicht verfügbar
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FM25V10-DG Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Produkt ist nicht verfügbar
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: WSON8
Produkt ist nicht verfügbar
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
209+0.34 EUR
Mindestbestellmenge: 167
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IRFSL7440PBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFSL7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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CY62168EV30LL-45BVXIT ?docID=50111
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY62168EV30LL-45BVXI Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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BFQ19SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C0C542C2A11C&compId=BFQ19SH6327XTSA1-dte.pdf?ci_sign=308d2c563328e90936001c00c9e93dc4a527b52a
BFQ19SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
147+0.49 EUR
161+0.44 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 100
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IRFSL4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388
IRFSL4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 107W
Case: PG-TO220-3
Mounting: THT
Drain current: 13.3A
On-state resistance: 0.1Ω
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 250V
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.43 EUR
31+2.32 EUR
33+2.19 EUR
Mindestbestellmenge: 30
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TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
Produkt ist nicht verfügbar
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IPU95R750P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3
IPU95R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
47+1.54 EUR
50+1.44 EUR
57+1.26 EUR
60+1.2 EUR
75+1.14 EUR
Mindestbestellmenge: 42
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TT210N12KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE521B282F6469&compId=TT210N12KOF.pdf?ci_sign=f7eaf7806bc8e7ae42f1597e6f4e3ad04450ee9d
TT210N12KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+108.68 EUR
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IRF6218STRLPBF pVersion=0046&contRep=ZT&docId=E21F676E2293A6F1A303005056AB0C4F&compId=irf6218spbf.pdf?ci_sign=b2d854f32eaee6ca2234c84bf89ef10ff97de354
IRF6218STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4332PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d
IRFP4332PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLP3034PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58261FF1A6F5005056AB5A8F&compId=irlp3034pbf.pdf?ci_sign=9128909fc18795a56482a4b00afac011ad104a23
IRLP3034PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Drain-source voltage: 40V
Drain current: 327A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 341W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 108nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO247AC
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.33 EUR
15+4.76 EUR
Mindestbestellmenge: 12
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IRFP7430PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEB797742D5EA&compId=IRFP7430PBF.pdf?ci_sign=00881c1d66098117f06e4885f5e79cb15cc02fd0
IRFP7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Kind of package: tube
Case: TO247AC
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Gate charge: 300nC
On-state resistance: 1.3mΩ
Power dissipation: 366W
Drain current: 404A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 25
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IR2118PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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S29AL008J55BFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
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S29AL008J55BFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55BFIR22 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFNR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J55TFNR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BAN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI022 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFM023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70BFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR Flash
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD30P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0
SPD30P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
45+1.6 EUR
51+1.42 EUR
66+1.09 EUR
70+1.03 EUR
100+0.99 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BAS7007E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7007E6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
262+0.27 EUR
391+0.18 EUR
633+0.11 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF300R12KS4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62
FF300R12KS4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+262.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC120N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e
BSC120N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC120N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3
BSC120N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX41E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5
BCX41E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP193WH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191CC80C8AA211C&compId=BFP193WH6327-dte.pdf?ci_sign=898db4222a12e69935131f5ce32c7e5cd5bcd476
BFP193WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S405ATMA2 Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 2132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
73+0.99 EUR
75+0.96 EUR
77+0.93 EUR
80+0.9 EUR
81+0.89 EUR
100+0.87 EUR
Mindestbestellmenge: 50
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IRFS7530TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A677F07BCF01EC&compId=irfs7530pbf.pdf?ci_sign=85e71ad5005e668b68064aa3ea1b9a48fa5ebf67
IRFS7530TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Trade name: StrongIRFET
On-state resistance: 2mΩ
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB017N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA73AB08EF811C&compId=IPB017N08N5-DTE.pdf?ci_sign=7307f2b75785faf784f6ce903b0ce2fffffbbf9a
IPB017N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR400WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Supply voltage: 1.6...18V DC
Type of integrated circuit: driver
Mounting: SMD
Kind of package: reel; tape
Case: SOT343
Power: 0.33W
Integrated circuit features: active bias controller
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
334+0.21 EUR
374+0.19 EUR
428+0.17 EUR
468+0.15 EUR
500+0.14 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
IPP034NE7N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E95E936085211C&compId=IPP034NE7N3G-DTE.pdf?ci_sign=8d0e6de0bd6b07ddb826b41cbddb3eb2f3531bd6
IPP034NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
22+3.4 EUR
24+2.97 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BSS606NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Drain-source voltage: 60V
Drain current: 3.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
157+0.46 EUR
191+0.37 EUR
319+0.22 EUR
338+0.21 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
IPB017N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA789EA0C3611C&compId=IPB017N10N5-DTE.pdf?ci_sign=0831c35b1695eacb56b73ab26680094032011dbd
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
23+3.12 EUR
25+2.89 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
1EDF5673FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDF5673FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Supply voltage: 3...3.5V; 6.5...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDI20N12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™; GaN
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape
Gate charge: 5.8nC
Technology: CoolGaN™
Kind of transistor: HEMT
Kind of channel: enhancement
Pulsed drain current: 60A
Gate-source voltage: -10V
Mounting: SMD
Case: PG-DSO-20
Gate current: 20mA
Drain-source voltage: 600V
Drain current: 31A
On-state resistance: 70mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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