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IGB50N65S5ATMA1 IGB50N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB81BC395BB820&compId=IGB50N65S5.pdf?ci_sign=0778718709225d6346585e04ae937444174763cc Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 199ns
Produkt ist nicht verfügbar
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IGW50N65F5FKSA1 IGW50N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BAFB0E0EF0AE2A18&compId=IGW50N65F5.pdf?ci_sign=58957c2cf056abb404f562d57cb4dd27fa5e9e23 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IGW50N65H5FKSA1 IGW50N65H5FKSA1 INFINEON TECHNOLOGIES DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
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IGZ50N65H5XKSA1 IGZ50N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6D68D8FA90A18&compId=IGZ50N65H5.pdf?ci_sign=96a64ded9d76f49e106ee56fcc6bd28a53b58942 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 27ns
Turn-off time: 271ns
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IHW50N65R5XKSA1 IHW50N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 15
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IKW50N65EH5XKSA1 IKW50N65EH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF29AD2429DB820&compId=IKW50N65EH5.pdf?ci_sign=543bacaa290afb265262e30a541ac32eec8829b1 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
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IKW50N65ES5XKSA1 IKW50N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2A0C69FC8B820&compId=IKW50N65ES5.pdf?ci_sign=37d8685f6023c7efb5ad42c81aa82f3ae004e6ee Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
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IKW50N65F5FKSA1 IKW50N65F5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C32ED04EF1CC&compId=IKW50N65F5-DTE.pdf?ci_sign=bba1665e443f317af0d8789097c07047bfdea290 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.4 EUR
28+2.63 EUR
29+2.49 EUR
Mindestbestellmenge: 17
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IKW50N65H5FKSA1 IKW50N65H5FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B905150E9D8FA8&compId=IKW50N65H5FKSA1-DTE.pdf?ci_sign=7f10bd8bc8b551f0edda00af4f15d07c1c38118b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.65 EUR
18+4.09 EUR
19+3.86 EUR
30+3.72 EUR
Mindestbestellmenge: 13
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IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2C6F50809D820&compId=IKW50N65WR5.pdf?ci_sign=8c4c9b0d0d9ac5f3cfcced20f163a629fe87121b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.26 EUR
15+4.82 EUR
16+4.56 EUR
Mindestbestellmenge: 14
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IKZ50N65ES5XKSA1 IKZ50N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5B41609FDF3D7&compId=IKZ50N65ES5.pdf?ci_sign=164ad88ab6dd00700ae40f6b09533ca8d88ec35b Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
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IKZ50N65NH5XKSA1 IKZ50N65NH5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C72DD820EC4A18&compId=IKZ50N65NH5.pdf?ci_sign=e634198c5e8edd6d50febfc52496a0b32b6a9135 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
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BTS3410GXUMA1 BTS3410GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8F98EFB4E259&compId=BTS3410G.pdf?ci_sign=ddc0179d6d16bdce0acde891ec45a1db5ab766cf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-DSO-8
Type of integrated circuit: power switch
On-state resistance: 0.2Ω
Output current: 1.3A
Power dissipation: 0.8W
Number of channels: 2
Mounting: SMD
Technology: HITFET®
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
43+1.7 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 32
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IRLR3705ZTRPBF IRLR3705ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF120FD286C55EA&compId=IRLR3705ZTRPBF.pdf?ci_sign=35ad5f87f1b8ef08e2a63ecd16eb41e8ada71222 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1225 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
45+1.62 EUR
58+1.24 EUR
61+1.17 EUR
100+1.14 EUR
250+1.13 EUR
Mindestbestellmenge: 32
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BTS3408GXUMA2 BTS3408GXUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799BFFC16F7AF0749&compId=BTS3408G.pdf?ci_sign=4799b98e7393b94cd3de40caf24b56a0f30f968a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 4.5...60V DC
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Case: PG-DSO-8
Technology: HITFET®
Kind of output: N-Channel
Turn-off time: 2µs
Turn-on time: 2µs
Power dissipation: 0.88W
On-state resistance: 0.48Ω
Output current: 0.55A
Number of channels: 2
Output voltage: 60V
auf Bestellung 2611 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.9 EUR
32+2.26 EUR
33+2.17 EUR
34+2.14 EUR
35+2.1 EUR
Mindestbestellmenge: 25
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IRLR2703TRPBF INFINEON TECHNOLOGIES irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 45mΩ
Drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Power dissipation: 45W
Pulsed drain current: 96A
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRLR2705TRLPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±16V
Drain-source voltage: 55V
Power dissipation: 68W
Pulsed drain current: 110A
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRLR2705TRPBF IRLR2705TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227E605A45B0F1A303005056AB0C4F&compId=irlr2705pbf.pdf?ci_sign=b6baeb06276ab86ae10757cd8e517e59dd6be110 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Drain-source voltage: 55V
Power dissipation: 68W
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
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IRLR3103TRPBF IRLR3103TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227EB606ADACF1A303005056AB0C4F&compId=irlr3103pbf.pdf?ci_sign=3cef654ee8f937478c9dc59895a9dc4f14faaa1c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227ED532A6AAF1A303005056AB0C4F&compId=irlr3105pbf.pdf?ci_sign=27e86e922a975b9332692ad13636276895f80f4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRLR3114ZTRPBF IRLR3114ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IHW30N160R5XKSA1 IHW30N160R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 411ns
Technology: TRENCHSTOP™
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.06 EUR
18+4.13 EUR
19+3.9 EUR
30+3.76 EUR
Mindestbestellmenge: 12
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IR2113PBF IR2113PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3412F1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=247116e3d5b7bad6858a091480152cfde4abe4bd description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.33 EUR
23+3.19 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 22
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IRLML9301TRPBF IRLML9301TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227C86AD25A8F1A303005056AB0C4F&compId=irlml9301pbf.pdf?ci_sign=cff5d3a9e1fb1b7e0e7544975a7831b46000b145 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11350 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
242+0.3 EUR
365+0.2 EUR
435+0.16 EUR
794+0.09 EUR
834+0.086 EUR
6000+0.082 EUR
Mindestbestellmenge: 173
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SMBT2222AE6327HTSA1 SMBT2222AE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7FFBA97A00469&compId=SMBT2222AE6327.pdf?ci_sign=e947f7e7ed39cabf58351392c21760d8d29d3c84 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E7B9E48F611C&compId=BSC040N10NS5-DTE.pdf?ci_sign=1afe5a86553b823be907139a75c36c5eed705e55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA51E41005A11C&compId=BSZ440N10NS3G-DTE.pdf?ci_sign=346209358a53e8d09666903e8b3a2cdcaef96bb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
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IAUZ40N10S5L120ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUZ40N10S5N130ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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PVT412LSPBF PVT412LSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Control current: 3...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
On-state resistance: 35Ω
Relay variant: MOSFET
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.92 EUR
13+5.51 EUR
14+5.21 EUR
15+5 EUR
Mindestbestellmenge: 11
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.78 EUR
12+6.03 EUR
Mindestbestellmenge: 10
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IPB64N25S320ATMA1 INFINEON TECHNOLOGIES Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 46A
Produkt ist nicht verfügbar
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IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IR2136SPBF IR2136SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.17 EUR
10+7.48 EUR
Mindestbestellmenge: 8
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IR2136STRPBF IR2136STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 2N7002H6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5C2CA4584F10B&compId=2N7002H6327XTSA2.pdf?ci_sign=329548fe42e8d9dcb0858f8ddae70fe1ac08d7bb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6072 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
556+0.13 EUR
633+0.11 EUR
854+0.084 EUR
977+0.073 EUR
1348+0.053 EUR
1425+0.05 EUR
3000+0.049 EUR
Mindestbestellmenge: 500
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3 Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
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IRF1405PBF IRF1405PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 170nC
On-state resistance: 5.3mΩ
auf Bestellung 1203 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.83 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 26
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IRF1405STRLPBF IRF1405STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
60+1.2 EUR
64+1.13 EUR
Mindestbestellmenge: 26
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF149F8AD1575EA&compId=IRS44273LTRPBF.pdf?ci_sign=0811e9e8216aae8fdb7f04e8f1b695bc97deadfd Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Topology: single transistor
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
auf Bestellung 1476 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
100+0.72 EUR
102+0.7 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 88
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IRS21814SPBF IRS21814SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D3FF1A6F5005056AB5A8F&compId=irs2181.pdf?ci_sign=6993d3a766a3465e140bc82188cb2503d6b7f53b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.26 EUR
20+3.59 EUR
Mindestbestellmenge: 17
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IRS21064SPBF IRS21064SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRF7456TRPBF IRF7456TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Kind of channel: enhancement
Case: SO8
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 16A
Drain-source voltage: 20V
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 641 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.02 EUR
20+3.7 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 18
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 8082 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
350+0.2 EUR
540+0.13 EUR
937+0.076 EUR
993+0.072 EUR
Mindestbestellmenge: 264
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74E879E8C75EA&compId=SPW47N60C3.pdf?ci_sign=1a73e65522ac6237960a368d454b3746e49500ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.86 EUR
7+10.45 EUR
Mindestbestellmenge: 6
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC092237EC5C143&compId=SPW47N60CFD.pdf?ci_sign=c0df2ab8085e621354099569b122d97599ed0c0d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.06 EUR
6+12.43 EUR
7+11.75 EUR
Mindestbestellmenge: 4
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
59+1.23 EUR
76+0.94 EUR
80+0.9 EUR
Mindestbestellmenge: 53
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BF5C458C24F1A303005056AB0C4F&compId=irfr024npbf.pdf?ci_sign=9b1c86bd4b0622dc63c7904ce4b9483a8f5c26cd description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 8916 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
113+0.63 EUR
130+0.55 EUR
138+0.52 EUR
143+0.5 EUR
Mindestbestellmenge: 91
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AUIRFR024N AUIRFR024N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04594540D61F1A6F5005056AB5A8F&compId=auirfr024n.pdf?ci_sign=ad8d4298fb54861854d9871cb66091ace3859e24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2118SPBF IR2118SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
47+1.54 EUR
52+1.39 EUR
53+1.34 EUR
Mindestbestellmenge: 36
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Integrated circuit features: charge pump; integrated bootstrap functionality
Output current: -0.35...0.2A
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
44+1.66 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF IR2308SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB81BC395BB820&compId=IGB50N65S5.pdf?ci_sign=0778718709225d6346585e04ae937444174763cc
IGB50N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 199ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BAFB0E0EF0AE2A18&compId=IGW50N65F5.pdf?ci_sign=58957c2cf056abb404f562d57cb4dd27fa5e9e23
IGW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N65H5FKSA1 DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25
IGW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGZ50N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6D68D8FA90A18&compId=IGZ50N65H5.pdf?ci_sign=96a64ded9d76f49e106ee56fcc6bd28a53b58942
IGZ50N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 27ns
Turn-off time: 271ns
Produkt ist nicht verfügbar
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IHW50N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCFFAFB3183820&compId=IHW50N65R5.pdf?ci_sign=79609e9ed288e8af523721c936628f411dd72516
IHW50N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
Turn-on time: 50ns
Turn-off time: 218ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65EH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF29AD2429DB820&compId=IKW50N65EH5.pdf?ci_sign=543bacaa290afb265262e30a541ac32eec8829b1
IKW50N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 138W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 54ns
Turn-off time: 207ns
Produkt ist nicht verfügbar
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IKW50N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2A0C69FC8B820&compId=IKW50N65ES5.pdf?ci_sign=37d8685f6023c7efb5ad42c81aa82f3ae004e6ee
IKW50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 47ns
Turn-off time: 161ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65F5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4C32ED04EF1CC&compId=IKW50N65F5-DTE.pdf?ci_sign=bba1665e443f317af0d8789097c07047bfdea290
IKW50N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.4 EUR
28+2.63 EUR
29+2.49 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65H5FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B905150E9D8FA8&compId=IKW50N65H5FKSA1-DTE.pdf?ci_sign=7f10bd8bc8b551f0edda00af4f15d07c1c38118b
IKW50N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.65 EUR
18+4.09 EUR
19+3.86 EUR
30+3.72 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2C6F50809D820&compId=IKW50N65WR5.pdf?ci_sign=8c4c9b0d0d9ac5f3cfcced20f163a629fe87121b
IKW50N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 141W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 141W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 79ns
Turn-off time: 420ns
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
15+4.82 EUR
16+4.56 EUR
Mindestbestellmenge: 14
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IKZ50N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5B41609FDF3D7&compId=IKZ50N65ES5.pdf?ci_sign=164ad88ab6dd00700ae40f6b09533ca8d88ec35b
IKZ50N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60.5A
Power dissipation: 137W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 58ns
Turn-off time: 326ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ50N65NH5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C72DD820EC4A18&compId=IKZ50N65NH5.pdf?ci_sign=e634198c5e8edd6d50febfc52496a0b32b6a9135
IKZ50N65NH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Technology: TRENCHSTOP™ 5
Turn-on time: 30ns
Turn-off time: 275ns
Produkt ist nicht verfügbar
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BTS3410GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD8F98EFB4E259&compId=BTS3410G.pdf?ci_sign=ddc0179d6d16bdce0acde891ec45a1db5ab766cf
BTS3410GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 2; N-Channel; SMD; PG-DSO-8
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-DSO-8
Type of integrated circuit: power switch
On-state resistance: 0.2Ω
Output current: 1.3A
Power dissipation: 0.8W
Number of channels: 2
Mounting: SMD
Technology: HITFET®
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
43+1.7 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3705ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF120FD286C55EA&compId=IRLR3705ZTRPBF.pdf?ci_sign=35ad5f87f1b8ef08e2a63ecd16eb41e8ada71222
IRLR3705ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1225 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
45+1.62 EUR
58+1.24 EUR
61+1.17 EUR
100+1.14 EUR
250+1.13 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BTS3408GXUMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE799BFFC16F7AF0749&compId=BTS3408G.pdf?ci_sign=4799b98e7393b94cd3de40caf24b56a0f30f968a
BTS3408GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 550mA; Ch: 2; N-Channel; SMD; PG-DSO-8
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 4.5...60V DC
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Case: PG-DSO-8
Technology: HITFET®
Kind of output: N-Channel
Turn-off time: 2µs
Turn-on time: 2µs
Power dissipation: 0.88W
On-state resistance: 0.48Ω
Output current: 0.55A
Number of channels: 2
Output voltage: 60V
auf Bestellung 2611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.9 EUR
32+2.26 EUR
33+2.17 EUR
34+2.14 EUR
35+2.1 EUR
Mindestbestellmenge: 25
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IRLR2703TRPBF irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 45mΩ
Drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Power dissipation: 45W
Pulsed drain current: 96A
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRLR2705TRLPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Mounting: SMD
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±16V
Drain-source voltage: 55V
Power dissipation: 68W
Pulsed drain current: 110A
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRPBF pVersion=0046&contRep=ZT&docId=E2227E605A45B0F1A303005056AB0C4F&compId=irlr2705pbf.pdf?ci_sign=b6baeb06276ab86ae10757cd8e517e59dd6be110
IRLR2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Drain-source voltage: 55V
Power dissipation: 68W
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3103TRPBF pVersion=0046&contRep=ZT&docId=E2227EB606ADACF1A303005056AB0C4F&compId=irlr3103pbf.pdf?ci_sign=3cef654ee8f937478c9dc59895a9dc4f14faaa1c
IRLR3103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 69W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 69W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3105TRPBF pVersion=0046&contRep=ZT&docId=E2227ED532A6AAF1A303005056AB0C4F&compId=irlr3105pbf.pdf?ci_sign=27e86e922a975b9332692ad13636276895f80f4c
IRLR3105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRLR3114ZTRPBF pVersion=0046&contRep=ZT&docId=E2227F0A43EA42F1A303005056AB0C4F&compId=irlr3114zpbf.pdf?ci_sign=b67d9f56423182b820e3c12a3af3a3ea7058ed1b
IRLR3114ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IHW30N160R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA46CB7F2218BF&compId=IHW30N160R5.pdf?ci_sign=f142f1feb3d530f98974a0719171f909d530cf4d
IHW30N160R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 411ns
Technology: TRENCHSTOP™
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.06 EUR
18+4.13 EUR
19+3.9 EUR
30+3.76 EUR
Mindestbestellmenge: 12
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IR2113PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3412F1A6F5005056AB5A8F&compId=ir2110_2113.pdf?ci_sign=247116e3d5b7bad6858a091480152cfde4abe4bd
IR2113PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 111ns
Turn-on time: 145ns
Power: 1.6W
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
23+3.19 EUR
29+2.52 EUR
31+2.37 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRLML9301TRPBF pVersion=0046&contRep=ZT&docId=E2227C86AD25A8F1A303005056AB0C4F&compId=irlml9301pbf.pdf?ci_sign=cff5d3a9e1fb1b7e0e7544975a7831b46000b145
IRLML9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 11350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
242+0.3 EUR
365+0.2 EUR
435+0.16 EUR
794+0.09 EUR
834+0.086 EUR
6000+0.082 EUR
Mindestbestellmenge: 173
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SMBT2222AE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7FFBA97A00469&compId=SMBT2222AE6327.pdf?ci_sign=e947f7e7ed39cabf58351392c21760d8d29d3c84
SMBT2222AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E7B9E48F611C&compId=BSC040N10NS5-DTE.pdf?ci_sign=1afe5a86553b823be907139a75c36c5eed705e55
BSC040N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSZ440N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA51E41005A11C&compId=BSZ440N10NS3G-DTE.pdf?ci_sign=346209358a53e8d09666903e8b3a2cdcaef96bb8
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 5899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 160A
Power dissipation: 62W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVT412LSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0D189AB1E21EC&compId=pvt412.pdf?ci_sign=8a606da7add791abdac6d3bf1a684622fceaac0c
PVT412LSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Control current: 3...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
On-state resistance: 35Ω
Relay variant: MOSFET
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.92 EUR
13+5.51 EUR
14+5.21 EUR
15+5 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573
IRF7424TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2132SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD88A67FAC295EA&compId=IR2132JPBF.pdf?ci_sign=0a80f7199067b13ee36070118f53aa88569ddda4
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.78 EUR
12+6.03 EUR
Mindestbestellmenge: 10
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IPB64N25S320ATMA1 Infineon-IPB64N25S3-20-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937af6620149&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: OptiMOS® -T
Case: PG-TO263-3-2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 20mΩ
Drain current: 46A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF pVersion=0046&contRep=ZT&docId=E22281BCD47E0AF1A303005056AB0C4F&compId=irlr9343pbf.pdf?ci_sign=75d97c5ddc279c59419ed2ddad89b8f640b34891
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2136SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.17 EUR
10+7.48 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IR2136STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC212A803B55EA&compId=IR2136STRPBF.pdf?ci_sign=eda5310d7e0d7b6075a828f4bc7bb92bc93e0c97
IR2136STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.4µs
Turn-off time: 380ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002H6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5C2CA4584F10B&compId=2N7002H6327XTSA2.pdf?ci_sign=329548fe42e8d9dcb0858f8ddae70fe1ac08d7bb
2N7002H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6072 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
556+0.13 EUR
633+0.11 EUR
854+0.084 EUR
977+0.073 EUR
1348+0.053 EUR
1425+0.05 EUR
3000+0.049 EUR
Mindestbestellmenge: 500
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AUIRGP35B60PD pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC7325BAA9773D7&compId=AUIRGP35B60PD.pdf?ci_sign=a814561838fdc4c27889b131942746e92013c0b3
AUIRGP35B60PD
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 34A
Power dissipation: 123W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Turn-on time: 34ns
Turn-off time: 142ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405PBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9AB69F1A6F5005056AB5A8F&compId=irf1405.pdf?ci_sign=de55851dabce3431b508ff257378e49731e4e7e9
IRF1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 133A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 133A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 170nC
On-state resistance: 5.3mΩ
auf Bestellung 1203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 26
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IRF1405STRLPBF pVersion=0046&contRep=ZT&docId=E21F5DCEDEDF06F1A303005056AB0C4F&compId=irf1405spbf.pdf?ci_sign=8ffb81f923f936adf8e3205c35e37a3d5a64cf83
IRF1405STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 131A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1405ZPBF pVersion=0046&contRep=ZT&docId=E21F5DE6DA3AF1F1A303005056AB0C4F&compId=irf1405zpbf.pdf?ci_sign=e3a2c165305a26dfb16ddc05272a36952c1eb65f
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
60+1.2 EUR
64+1.13 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRS44273LTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF149F8AD1575EA&compId=IRS44273LTRPBF.pdf?ci_sign=0811e9e8216aae8fdb7f04e8f1b695bc97deadfd
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Topology: single transistor
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
auf Bestellung 1476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
100+0.72 EUR
102+0.7 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 88
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IRS21814SPBF description pVersion=0046&contRep=ZT&docId=E1C04EA78A4D3FF1A6F5005056AB5A8F&compId=irs2181.pdf?ci_sign=6993d3a766a3465e140bc82188cb2503d6b7f53b
IRS21814SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064PBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
20+3.59 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS21064SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS21064SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2106SPBF pVersion=0046&contRep=ZT&docId=E1C04E9B5E270FF1A6F5005056AB5A8F&compId=irs2106.pdf?ci_sign=c7748131628b198807ab630ce275b6b2dc39f5d0
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7456TRPBF pVersion=0046&contRep=ZT&docId=E221A3B5252434F1A303005056AB0C4F&compId=irf7456pbf.pdf?ci_sign=20eed7c0bcf4bf49fd28c8d398cd07cb3486fafc
IRF7456TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Kind of channel: enhancement
Case: SO8
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 16A
Drain-source voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4115PBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDF92803E4748AD20D6&compId=IRFB4115.pdf?ci_sign=a357cd38840e146aca5baa544c6a049cd1055155
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.02 EUR
20+3.7 EUR
26+2.79 EUR
28+2.65 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BCV47E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 8082 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
350+0.2 EUR
540+0.13 EUR
937+0.076 EUR
993+0.072 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74E879E8C75EA&compId=SPW47N60C3.pdf?ci_sign=1a73e65522ac6237960a368d454b3746e49500ae
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.86 EUR
7+10.45 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N60CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC092237EC5C143&compId=SPW47N60CFD.pdf?ci_sign=c0df2ab8085e621354099569b122d97599ed0c0d
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.06 EUR
6+12.43 EUR
7+11.75 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE7259-3GE pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0E450A8D76A14&compId=TLE7259-3.pdf?ci_sign=938ffa7d89771037b59075fcaeb1333d803a8dcf
TLE7259-3GE
Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; -40÷150°C; 5.5÷27VDC
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
59+1.23 EUR
76+0.94 EUR
80+0.9 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRFR024NTRPBF description pVersion=0046&contRep=ZT&docId=E221BF5C458C24F1A303005056AB0C4F&compId=irfr024npbf.pdf?ci_sign=9b1c86bd4b0622dc63c7904ce4b9483a8f5c26cd
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 8916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
113+0.63 EUR
130+0.55 EUR
138+0.52 EUR
143+0.5 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR024N pVersion=0046&contRep=ZT&docId=E1C04594540D61F1A6F5005056AB5A8F&compId=auirfr024n.pdf?ci_sign=ad8d4298fb54861854d9871cb66091ace3859e24
AUIRFR024N
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2118SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
47+1.54 EUR
52+1.39 EUR
53+1.34 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IR2301SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A8A1225C6A08FE27&compId=IR2301-DTE.pdf?ci_sign=c01e57684be53c86afb6cbf1626263184500b01c
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Integrated circuit features: charge pump; integrated bootstrap functionality
Output current: -0.35...0.2A
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
44+1.66 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IR2304SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA49DF8BDAB53D7&compId=ir2304.pdf?ci_sign=7f72118dd22d9864326e5acc4031a73c65be54a0
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
IR2308SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA4CBED651ED3D7&compId=ir2308.pdf?ci_sign=88067d29a6d1af22ccd027f1b1c11127c536abc6
IR2308SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Topology: MOSFET half-bridge
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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