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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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ISP752T ISP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.02 EUR
43+1.7 EUR
45+1.6 EUR
100+1.54 EUR
Mindestbestellmenge: 24
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BSC0504NSIATMA1 BSC0504NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FB14F6AEA11C&compId=BSC0504NSI-DTE.pdf?ci_sign=d63935e40a03d855fe2b4edfdc5a882564f66b04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 64A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
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TD122N22KOF TD122N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
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BSZ025N04LSATMA1 BSZ025N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Power dissipation: 0.5W
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4873 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
603+0.12 EUR
826+0.087 EUR
937+0.076 EUR
1092+0.065 EUR
1475+0.048 EUR
1558+0.046 EUR
Mindestbestellmenge: 455
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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FS75R12W2T4B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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BTS5014SDAAUMA1 BTS5014SDAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
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BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CE7C0F3D91BF&compId=IPA60R280P6-DTE.pdf?ci_sign=08d1d6408669e5a7e598c7bb06f1d1dca39becfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
29+2.52 EUR
36+2 EUR
44+1.66 EUR
46+1.56 EUR
Mindestbestellmenge: 26
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IPA60R199CPXKSA1 IPA60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280P7 IPA60R280P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2BEE6A4BB2749&compId=IPA60R280P7.pdf?ci_sign=c5d76bff142e564d760e07121e703fc630eade93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280E6XKSA1 IPA60R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C3FCF1A931BF&compId=IPA60R280E6-DTE.pdf?ci_sign=ff2c74d461761c5dd4f594410d6756d5d454b154 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
40+1.83 EUR
44+1.66 EUR
46+1.59 EUR
48+1.5 EUR
Mindestbestellmenge: 35
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.88 EUR
11+6.78 EUR
16+4.72 EUR
17+4.46 EUR
Mindestbestellmenge: 10
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.76 EUR
Mindestbestellmenge: 13
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R080P7 IPA60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1CDA5B1716749&compId=IPA60R080P7.pdf?ci_sign=b19a92ace49bddc420c6fddfebd6f5304ce10d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
133+0.54 EUR
176+0.41 EUR
296+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 103
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658 Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+69.78 EUR
Mindestbestellmenge: 2
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.21 EUR
23+3.15 EUR
25+2.97 EUR
Mindestbestellmenge: 12
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BCR555E6327 BCR555E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54BF16BF30469&compId=BCR555.pdf?ci_sign=70476ae6c4aa5d0fa0a3e850633835954210d08b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
496+0.14 EUR
646+0.11 EUR
797+0.09 EUR
Mindestbestellmenge: 496
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6695 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
468+0.15 EUR
554+0.13 EUR
625+0.11 EUR
703+0.1 EUR
946+0.076 EUR
1000+0.072 EUR
3000+0.069 EUR
Mindestbestellmenge: 313
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IDB30E120ATMA1 IDB30E120ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2439FDDAD0469&compId=IDB30E120ATMA1.pdf?ci_sign=5a621dfcb7943456ce2142ca34895c33f860913b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: TO263-3
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
40+1.8 EUR
53+1.37 EUR
55+1.3 EUR
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
205+0.35 EUR
224+0.32 EUR
240+0.3 EUR
252+0.28 EUR
266+0.27 EUR
271+0.26 EUR
Mindestbestellmenge: 179
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Output current: -10...10A
Type of integrated circuit: driver
Power dissipation: 26.1W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
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Lieferzeit 14-21 Tag (e)
6+12.03 EUR
7+10.21 EUR
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227B31DD76B8F1A303005056AB0C4F&compId=irll2705pbf.pdf?ci_sign=b59a3ae6b96ab89ac72517290e013616f2a9d6b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
87+0.83 EUR
159+0.45 EUR
168+0.43 EUR
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F4150R12KS4BOSA1 F4150R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 76A
Pulsed drain current: 400A
Power dissipation: 120W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Active logical level: low
Supply voltage: 4.5...5.5V
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
800+6.62 EUR
Mindestbestellmenge: 800
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IRF1010ZSTRLPBF INFINEON TECHNOLOGIES irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.68 EUR
Mindestbestellmenge: 800
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IPD040N03LF2SATMA1 INFINEON TECHNOLOGIES IPD040N03LF2SATMA1.pdf Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 40A; 37W; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.3 EUR
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BSP125H6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.35 EUR
Mindestbestellmenge: 4000
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ESD130B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.037 EUR
Mindestbestellmenge: 15000
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ESD131B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.026kW; 6V; 3.5A; bidirectional; 0201,0603; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.026kW
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.1µA
Number of channels: 1
Operating temperature: -55...125°C
auf Bestellung 15000 Stücke:
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15000+0.046 EUR
Mindestbestellmenge: 15000
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CY8C5287AXI-LP095 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
90+13.67 EUR
Mindestbestellmenge: 90
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PVT412LPBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.41 EUR
100+4.86 EUR
Mindestbestellmenge: 50
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Manufacturer series: PV
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.75 EUR
Mindestbestellmenge: 50
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; -40÷85°C; 4kV
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 1304 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.75 EUR
Mindestbestellmenge: 50
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PVT412PBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.39 EUR
100+4.86 EUR
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BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Electrical mounting: SMT
Gate charge: 1nC
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: 20V
Drain-source voltage: 60V
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1755000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.65 EUR
Mindestbestellmenge: 2500
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IPD30N06S4L23ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.51 EUR
Mindestbestellmenge: 2500
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 737 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
25+2.86 EUR
27+2.7 EUR
100+2.59 EUR
Mindestbestellmenge: 14
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.26A
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.17 EUR
Mindestbestellmenge: 2500
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BAS2103WE6433HTMA1 INFINEON TECHNOLOGIES bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRLR3636TRLPBF INFINEON TECHNOLOGIES IRSDS10828-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.43 EUR
Mindestbestellmenge: 2500
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IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.58 EUR
Mindestbestellmenge: 200
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PVT312PBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 IRSD-S-A0001048699-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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BTS118D BTS118D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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IRF7328TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR129E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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ISP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff
ISP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
43+1.7 EUR
45+1.6 EUR
100+1.54 EUR
Mindestbestellmenge: 24
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BSC0504NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2FB14F6AEA11C&compId=BSC0504NSI-DTE.pdf?ci_sign=d63935e40a03d855fe2b4edfdc5a882564f66b04
BSC0504NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 64A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD122N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443
TD122N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Case: PG-TSDSO-14
Operating voltage: 4.5...45V DC
Output current: -550...380mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED driver; SMPS controller
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ025N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3
BSZ025N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ028N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471
BSZ028N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS316NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254
BSS316NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Power dissipation: 0.5W
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
603+0.12 EUR
826+0.087 EUR
937+0.076 EUR
1092+0.065 EUR
1475+0.048 EUR
1558+0.046 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
FP06R12W1T4B3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FS75R12W2T4B11BOMA1 Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5014SDAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d
BTS5014SDAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5016SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35
BTS5016SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 16mΩ
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IKCM10L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7
IKCM10L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R280P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CE7C0F3D91BF&compId=IPA60R280P6-DTE.pdf?ci_sign=08d1d6408669e5a7e598c7bb06f1d1dca39becfb
IPA60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
29+2.52 EUR
36+2 EUR
44+1.66 EUR
46+1.56 EUR
Mindestbestellmenge: 26
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IPA60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d
IPA60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R280P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2BEE6A4BB2749&compId=IPA60R280P7.pdf?ci_sign=c5d76bff142e564d760e07121e703fc630eade93
IPA60R280P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C3FCF1A931BF&compId=IPA60R280E6-DTE.pdf?ci_sign=ff2c74d461761c5dd4f594410d6756d5d454b154
IPA60R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.83 EUR
44+1.66 EUR
46+1.59 EUR
48+1.5 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6
IPA60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.88 EUR
11+6.78 EUR
16+4.72 EUR
17+4.46 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f
IPA60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.76 EUR
Mindestbestellmenge: 13
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IPA60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6
IPA60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1CDA5B1716749&compId=IPA60R080P7.pdf?ci_sign=b19a92ace49bddc420c6fddfebd6f5304ce10d00
IPA60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
133+0.54 EUR
176+0.41 EUR
296+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 103
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IPB60R060P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82
IPB60R060P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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EVAL-IMM101T-015TOBO1 (SP004177748) pVersion=0046&contRep=ZT&docId=005056AB90B41EDBADF7A0174CD460C7&compId=EVALIMM101T015TOBO.PDF?ci_sign=1c41203658233780afea79eb8fca0913b805c658
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Application: motors
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-015M
Kind of connector: screw terminal x2
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+69.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
23+3.15 EUR
25+2.97 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BCR555E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54BF16BF30469&compId=BCR555.pdf?ci_sign=70476ae6c4aa5d0fa0a3e850633835954210d08b
BCR555E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
496+0.14 EUR
646+0.11 EUR
797+0.09 EUR
Mindestbestellmenge: 496
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BSS131H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
468+0.15 EUR
554+0.13 EUR
625+0.11 EUR
703+0.1 EUR
946+0.076 EUR
1000+0.072 EUR
3000+0.069 EUR
Mindestbestellmenge: 313
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IDB30E120ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA2439FDDAD0469&compId=IDB30E120ATMA1.pdf?ci_sign=5a621dfcb7943456ce2142ca34895c33f860913b
IDB30E120ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: TO263-3
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
40+1.8 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 31
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BSP296L6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1
BSP296L6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
205+0.35 EUR
224+0.32 EUR
240+0.3 EUR
252+0.28 EUR
266+0.27 EUR
271+0.26 EUR
Mindestbestellmenge: 179
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FP20R06W1E3B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e
FP20R06W1E3B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Frequency: 20kHz
Operating temperature: -40...125°C
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Output current: -10...10A
Type of integrated circuit: driver
Power dissipation: 26.1W
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Mounting: THT
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.03 EUR
7+10.21 EUR
Mindestbestellmenge: 6
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IRLL2705TRPBF pVersion=0046&contRep=ZT&docId=E2227B31DD76B8F1A303005056AB0C4F&compId=irll2705pbf.pdf?ci_sign=b59a3ae6b96ab89ac72517290e013616f2a9d6b3
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
87+0.83 EUR
159+0.45 EUR
168+0.43 EUR
Mindestbestellmenge: 59
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F4150R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81
F4150R12KS4BOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 76A
Pulsed drain current: 400A
Power dissipation: 120W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Active logical level: low
Supply voltage: 4.5...5.5V
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+6.62 EUR
Mindestbestellmenge: 800
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IRF1010ZSTRLPBF irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.68 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 40A; 37W; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.35 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
ESD130B1W0201E6327XTSA1 Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.037 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.026kW; 6V; 3.5A; bidirectional; 0201,0603; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.026kW
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: 0201; 0603
Mounting: SMD
Leakage current: 0.1µA
Number of channels: 1
Operating temperature: -55...125°C
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.046 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
CY8C5287AXI-LP095 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+13.67 EUR
Mindestbestellmenge: 90
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PVT412LPBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.41 EUR
100+4.86 EUR
Mindestbestellmenge: 50
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Manufacturer series: PV
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.75 EUR
Mindestbestellmenge: 50
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; -40÷85°C; 4kV
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 1304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.75 EUR
Mindestbestellmenge: 50
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PVT412PBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.39 EUR
100+4.86 EUR
Mindestbestellmenge: 50
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Electrical mounting: SMT
Gate charge: 1nC
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: 20V
Drain-source voltage: 60V
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1755000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRL40SC228 Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 737 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
25+2.86 EUR
27+2.7 EUR
100+2.59 EUR
Mindestbestellmenge: 14
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IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.26A
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
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BAS2103WE6433HTMA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.43 EUR
Mindestbestellmenge: 2500
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.58 EUR
Mindestbestellmenge: 200
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PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 IRSD-S-A0001048699-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BTS118D pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff
BTS118D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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IRF7328TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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