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IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC92C2BCF2411C&compId=IPP220N25NFD-DTE.pdf?ci_sign=8473d47f003cb3d74123ea2cfe5e1878cb318853 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Produkt ist nicht verfügbar
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IPD320N20N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.12 EUR
Mindestbestellmenge: 2500
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BSC037N08NS5ATMA1 BSC037N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E0B3F440811C&compId=BSC037N08NS5-DTE.pdf?ci_sign=068004eaadd07b73cbe8cb48d01465db41fd351d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N10S5L110ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUS260N10S5N019TATMA1 INFINEON TECHNOLOGIES Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD60N10S4L12ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.8 EUR
Mindestbestellmenge: 2500
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IPD60N10S412ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.9 EUR
Mindestbestellmenge: 2500
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IRF7815TRPBF IRF7815TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 5.1A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Case: SO8
Produkt ist nicht verfügbar
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IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE88A39EAC5820&compId=IKW30N65ES5.pdf?ci_sign=3c20a4d6d2a4a6234dfd9d5cb8e68d9172ce375c Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.66 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 13
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IKW30N65EL5XKSA1 IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5FF825DFA73D7&compId=IKW30N65EL5.pdf?ci_sign=3e84e8081f403beff14a277f197238a0c9aed21a Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IDFW40E65D1E IDFW40E65D1E INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BAB8A3156CF3D1&compId=IDFW40E65D1E.pdf?ci_sign=910f295e6f32641666b6b1f71d97f8f632622956 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 35A; tube; Ifsm: 120A; TO247-3; 57W
Power dissipation: 57W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Max. off-state voltage: 650V
Load current: 35A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Produkt ist nicht verfügbar
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CY8C4013SXI-411T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller
Type of integrated circuit: PSoC microcontroller
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.33 EUR
Mindestbestellmenge: 2500
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IRFB260NPBF IRFB260NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B69CF1A6F5005056AB5A8F&compId=irfb260n.pdf?ci_sign=78a2a1733f619070b086e75b575a83328dc7aeca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Power dissipation: 380W
Polarisation: unipolar
Case: TO220AB
Kind of package: tube
Mounting: THT
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±20V
Drain current: 56A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
37+1.94 EUR
40+1.83 EUR
Mindestbestellmenge: 24
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2765 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
225+0.32 EUR
396+0.18 EUR
863+0.083 EUR
911+0.079 EUR
Mindestbestellmenge: 167
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BCR583E6327HTSA1 BCR583E6327HTSA1 INFINEON TECHNOLOGIES bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
715+0.1 EUR
798+0.09 EUR
999+0.072 EUR
1058+0.068 EUR
Mindestbestellmenge: 455
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BCW67CE6327 BCW67CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52D8FFE996469&compId=BCW67B.pdf?ci_sign=bdbfe8f0672e4b7d88af7d57146c2b876a179314 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
517+0.14 EUR
588+0.12 EUR
658+0.11 EUR
1085+0.066 EUR
1147+0.062 EUR
Mindestbestellmenge: 264
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BCR562E6327 BCR562E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54947CF9D8469&compId=BCR562.pdf?ci_sign=176f9a32ccc0b392519c73836ded721c287ee03c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
590+0.12 EUR
660+0.11 EUR
835+0.086 EUR
880+0.082 EUR
Mindestbestellmenge: 380
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BC817UE6327HTSA1 BC817UE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Frequency: 170MHz
Collector-emitter voltage: 45V
Collector current: 0.5A
Type of transistor: NPN x2
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
Case: SC74
auf Bestellung 677 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
240+0.3 EUR
295+0.24 EUR
397+0.18 EUR
486+0.15 EUR
516+0.14 EUR
Mindestbestellmenge: 162
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BCX71KE6327 BCX71KE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2705 Stücke:
Lieferzeit 14-21 Tag (e)
977+0.073 EUR
1087+0.066 EUR
1232+0.058 EUR
1393+0.051 EUR
1471+0.049 EUR
Mindestbestellmenge: 977
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BSZ009NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSZ017NE2LS5IATMA1 INFINEON TECHNOLOGIES Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ031NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSZ0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSZ019N03LSATMA1 BSZ019N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF2B639A8A11C&compId=BSZ019N03LS-DTE.pdf?ci_sign=b52c6b23a22669ecf0dae412af6ec741297d374d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DEF45337FA11C&compId=BSZ018NE2LSI-DTE.pdf?ci_sign=acae32995b5cdedb2f43968670a8e2ecbaebfed6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF54612E1A811C&compId=BSZ036NE2LS-DTE.pdf?ci_sign=8d8eb52afd67cfbc94e617d39c7e69ebd12fdb56 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 37W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 37W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ065N03LSATMA1 BSZ065N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ068N06NSATMA1 BSZ068N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0902NSATMA1 BSZ0902NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF64ACBBD5E11C&compId=BSZ0902NS-DTE.pdf?ci_sign=e3f4d546ef7f5a8a7c5a699e1250a82958641a81 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0902NSIATMA1 BSZ0902NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF69D07F63811C&compId=BSZ0902NSI-DTE.PDF?ci_sign=0b340f540cb129b8c2140f98ebd831c45eb7e963 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ099N06LS5ATMA1 BSZ099N06LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D63D1CCEA8143&compId=BSZ099N06LS5.pdf?ci_sign=b11d7fa82b54145d44aecd821201c4ee5bf74603 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 6.9nC
Produkt ist nicht verfügbar
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BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ067N06LS3GATMA1 BSZ067N06LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1A9561A7011C&compId=BSZ067N06LS3G-DTE.pdf?ci_sign=0f04b9701f32def11c7d73775dd03f2c23e8ccdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0506NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0C9155E0211C&compId=BSZ0506NS-DTE.pdf?ci_sign=732a43a878218d794f7544f1ee6aa17909633f10 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ014NE2LS5IFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE506FFFB611C&compId=BSZ014NE2LS5IF-DTE.pdf?ci_sign=2eb03ffea6713708ea6c2abffa5148b9ce7c1547 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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BSZ035N03LSGATMA1 BSZ035N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E01A11A90811C&compId=BSZ035N03LSG-DTE.pdf?ci_sign=1ba0e64cdb87ea26d109828d06c283da8c193db1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ035N03MSGATMA1 BSZ035N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E03DB8287811C&compId=BSZ035N03MSG-DTE.pdf?ci_sign=b98e83f28ac710aa5ceb6da5acbd2868155cc714 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5F600351953D7&compId=IKW30N65WR5.pdf?ci_sign=fca82b64ffb71e83afcb941304821656608b4787 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 51ns
Turn-off time: 376ns
Pulsed collector current: 90A
Collector current: 30A
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
16+4.46 EUR
Mindestbestellmenge: 15
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IKP30N65H5XKSA1 IKP30N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDACF6933851BF&compId=IKP30N65H5-DTE.pdf?ci_sign=2782473722d787c91839e4ac87cde0214d604f30 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Pulsed collector current: 90A
Collector current: 36A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
Produkt ist nicht verfügbar
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IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC65625A78A73D7&compId=IHW30N65R5.pdf?ci_sign=7f03a628084c42f7eb5565be268fbe684ca2dcbe Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-off time: 228ns
Pulsed collector current: 90A
Collector current: 30A
Produkt ist nicht verfügbar
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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD73C566023820&compId=IKB30N65ES5.pdf?ci_sign=671f77607770fe9bac35150f66b692c60c114758 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6EBA99D05EA18&compId=ikw30n65h5.pdf?ci_sign=ef4af8313a33a24ffc5ddf2605e51512f85de775 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 31ns
Turn-off time: 209ns
Pulsed collector current: 90A
Collector current: 35A
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45F1EF19DB1CC&compId=IGP30N65F5-DTE.pdf?ci_sign=d5808c516fe5b312f9544fcad07701861f873cea Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 55A
Produkt ist nicht verfügbar
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
Produkt ist nicht verfügbar
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE50433F363820&compId=IKP30N65F5.pdf?ci_sign=fa3d1b47c8af8e134f5a323bdc4d3df0efadea7d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 22ns
Turn-off time: 189ns
Pulsed collector current: 90A
Collector current: 35A
Produkt ist nicht verfügbar
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FF450R12KT4 FF450R12KT4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS5210G BTS5210G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698792116A06469&compId=BTS5210G.pdf?ci_sign=34a674fb634ae891218c8c260ba20409e1b33986 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BTS52004EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5200-4EKA-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa3fee7cd1052 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
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2500+2 EUR
Mindestbestellmenge: 2500
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IPD50P03P4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Protection: undervoltage UVP
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IRFS7440TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756
IRFS7440TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP220N25NFDAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC92C2BCF2411C&compId=IPP220N25NFD-DTE.pdf?ci_sign=8473d47f003cb3d74123ea2cfe5e1878cb318853
IPP220N25NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD320N20N3GATMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.12 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSC037N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E0B3F440811C&compId=BSC037N08NS5-DTE.pdf?ci_sign=068004eaadd07b73cbe8cb48d01465db41fd351d
BSC037N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95
BSZ160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N10S5L110ATMA1 Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 88W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 24.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUS260N10S5N019TATMA1 Infineon-IAUS260N10S5N019T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e04616a61b8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 91A; Idm: 995A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 91A
Pulsed drain current: 995A
Power dissipation: 300W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 166nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT260N10S5N019ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA625C2D75F8BF&compId=IAUT260N10S5N019.pdf?ci_sign=1aa6b2f88c04f179f60d3021911e4032f4f93c2b
IAUT260N10S5N019ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60N10S4L12ATMA1 Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60N10S412ATMA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.9 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRF7815TRPBF pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b
IRF7815TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 5.1A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE88A39EAC5820&compId=IKW30N65ES5.pdf?ci_sign=3c20a4d6d2a4a6234dfd9d5cb8e68d9172ce375c
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.66 EUR
21+3.55 EUR
22+3.35 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65EL5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5FF825DFA73D7&compId=IKW30N65EL5.pdf?ci_sign=3e84e8081f403beff14a277f197238a0c9aed21a
IKW30N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IDFW40E65D1E pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BAB8A3156CF3D1&compId=IDFW40E65D1E.pdf?ci_sign=910f295e6f32641666b6b1f71d97f8f632622956
IDFW40E65D1E
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 35A; tube; Ifsm: 120A; TO247-3; 57W
Power dissipation: 57W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Max. off-state voltage: 650V
Load current: 35A
Semiconductor structure: single diode
Max. forward impulse current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4013SXI-411T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller
Type of integrated circuit: PSoC microcontroller
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFB260NPBF pVersion=0046&contRep=ZT&docId=E1C04E5921B69CF1A6F5005056AB5A8F&compId=irfb260n.pdf?ci_sign=78a2a1733f619070b086e75b575a83328dc7aeca
IRFB260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Power dissipation: 380W
Polarisation: unipolar
Case: TO220AB
Kind of package: tube
Mounting: THT
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±20V
Drain current: 56A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
37+1.94 EUR
40+1.83 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BCV27E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Kind of transistor: Darlington
auf Bestellung 2765 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
225+0.32 EUR
396+0.18 EUR
863+0.083 EUR
911+0.079 EUR
Mindestbestellmenge: 167
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BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
715+0.1 EUR
798+0.09 EUR
999+0.072 EUR
1058+0.068 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BCW67CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C52D8FFE996469&compId=BCW67B.pdf?ci_sign=bdbfe8f0672e4b7d88af7d57146c2b876a179314
BCW67CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
517+0.14 EUR
588+0.12 EUR
658+0.11 EUR
1085+0.066 EUR
1147+0.062 EUR
Mindestbestellmenge: 264
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BCR562E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54947CF9D8469&compId=BCR562.pdf?ci_sign=176f9a32ccc0b392519c73836ded721c287ee03c
BCR562E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
590+0.12 EUR
660+0.11 EUR
835+0.086 EUR
880+0.082 EUR
Mindestbestellmenge: 380
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BC817UE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff
BC817UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Frequency: 170MHz
Collector-emitter voltage: 45V
Collector current: 0.5A
Type of transistor: NPN x2
Power dissipation: 0.33W
Polarisation: bipolar
Mounting: SMD
Case: SC74
auf Bestellung 677 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
240+0.3 EUR
295+0.24 EUR
397+0.18 EUR
486+0.15 EUR
516+0.14 EUR
Mindestbestellmenge: 162
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BCX71KE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363
BCX71KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2705 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
977+0.073 EUR
1087+0.066 EUR
1232+0.058 EUR
1393+0.051 EUR
1471+0.049 EUR
Mindestbestellmenge: 977
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BSZ009NE2LS5ATMA1 Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ017NE2LS5IATMA1 Infineon-BSZ017NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f64dff4bf6a99
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ031NE2LS5ATMA1 Infineon-BSZ031NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f17a9bb6a75fa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0502NSIATMA1 Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ019N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF2B639A8A11C&compId=BSZ019N03LS-DTE.pdf?ci_sign=b52c6b23a22669ecf0dae412af6ec741297d374d
BSZ019N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DEF45337FA11C&compId=BSZ018NE2LSI-DTE.pdf?ci_sign=acae32995b5cdedb2f43968670a8e2ecbaebfed6
BSZ018NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ036NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF54612E1A811C&compId=BSZ036NE2LS-DTE.pdf?ci_sign=8d8eb52afd67cfbc94e617d39c7e69ebd12fdb56
BSZ036NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 37W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 37W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.1Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ065N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E18BF866E611C&compId=BSZ065N03LS-DTE.pdf?ci_sign=75cbba94d172cc4e8a4d3474d69165678811b870
BSZ065N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ068N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1C1ABF3B811C&compId=BSZ068N06NS-DTE.pdf?ci_sign=fa3ecd472cbb88f8d166e7c20f1c2f8d458bfbec
BSZ068N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0902NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF64ACBBD5E11C&compId=BSZ0902NS-DTE.pdf?ci_sign=e3f4d546ef7f5a8a7c5a699e1250a82958641a81
BSZ0902NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0902NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DF69D07F63811C&compId=BSZ0902NSI-DTE.PDF?ci_sign=0b340f540cb129b8c2140f98ebd831c45eb7e963
BSZ0902NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ099N06LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D63D1CCEA8143&compId=BSZ099N06LS5.pdf?ci_sign=b11d7fa82b54145d44aecd821201c4ee5bf74603
BSZ099N06LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 6.9nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ520N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c
BSZ520N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ067N06LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1A9561A7011C&compId=BSZ067N06LS3G-DTE.pdf?ci_sign=0f04b9701f32def11c7d73775dd03f2c23e8ccdf
BSZ067N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0506NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0C9155E0211C&compId=BSZ0506NS-DTE.pdf?ci_sign=732a43a878218d794f7544f1ee6aa17909633f10
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ014NE2LS5IFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE506FFFB611C&compId=BSZ014NE2LS5IF-DTE.pdf?ci_sign=2eb03ffea6713708ea6c2abffa5148b9ce7c1547
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ035N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E01A11A90811C&compId=BSZ035N03LSG-DTE.pdf?ci_sign=1ba0e64cdb87ea26d109828d06c283da8c193db1
BSZ035N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ035N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E03DB8287811C&compId=BSZ035N03MSG-DTE.pdf?ci_sign=b98e83f28ac710aa5ceb6da5acbd2868155cc714
BSZ035N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA87948325611C&compId=IPB020N10N5-dte.pdf?ci_sign=0e271e4747a3359c20c2048905fcf7fe0c97f30a
IPB020N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB020N10N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A2F8657C14D10749&compId=IPB020N10N5LF.pdf?ci_sign=d2dde93c8ab6b6de09ca42907929750b1d27bba8
IPB020N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5F600351953D7&compId=IKW30N65WR5.pdf?ci_sign=fca82b64ffb71e83afcb941304821656608b4787
IKW30N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 51ns
Turn-off time: 376ns
Pulsed collector current: 90A
Collector current: 30A
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.46 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDACF6933851BF&compId=IKP30N65H5-DTE.pdf?ci_sign=2782473722d787c91839e4ac87cde0214d604f30
IKP30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Pulsed collector current: 90A
Collector current: 36A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Pulsed collector current: 120A
Collector current: 62A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC65625A78A73D7&compId=IHW30N65R5.pdf?ci_sign=7f03a628084c42f7eb5565be268fbe684ca2dcbe
IHW30N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-off time: 228ns
Pulsed collector current: 90A
Collector current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65ES5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD73C566023820&compId=IKB30N65ES5.pdf?ci_sign=671f77607770fe9bac35150f66b692c60c114758
IKB30N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 29ns
Turn-off time: 154ns
Pulsed collector current: 120A
Collector current: 39.5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6EBA99D05EA18&compId=ikw30n65h5.pdf?ci_sign=ef4af8313a33a24ffc5ddf2605e51512f85de775
IKW30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 31ns
Turn-off time: 209ns
Pulsed collector current: 90A
Collector current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45F1EF19DB1CC&compId=IGP30N65F5-DTE.pdf?ci_sign=d5808c516fe5b312f9544fcad07701861f873cea
IGP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 55A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac
IKB30N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE50433F363820&compId=IKP30N65F5.pdf?ci_sign=fa3d1b47c8af8e134f5a323bdc4d3df0efadea7d
IKP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 22ns
Turn-off time: 189ns
Pulsed collector current: 90A
Collector current: 35A
Produkt ist nicht verfügbar
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FF450R12KT4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
FF450R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BTS5210G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698792116A06469&compId=BTS5210G.pdf?ci_sign=34a674fb634ae891218c8c260ba20409e1b33986
BTS5210G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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BTS52004EKAXUMA1 Infineon-BTS5200-4EKA-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa3fee7cd1052
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-11
Gate-source voltage: -5...16V
On-state resistance: 10.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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IPB107N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC09BF31FC11C&compId=IPB107N20N3G-DTE.pdf?ci_sign=3aa81fd74f1452936f06da3031e959bc85802488
IPB107N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 200V
Drain current: 88A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1EDI60N12AFXUMA1 Infineon-1EDI60N12AF-DS-v02_00-EN.pdf?fileId=db3a3043427ac3e201428e5da08f372a
1EDI60N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Protection: undervoltage UVP
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
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1EDI40I12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD371C3FDD938BF&compId=1EDIxxI12AF.pdf?ci_sign=471f8bfde103508bd8c42273b85d6b83f9faec20
1EDI40I12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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