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BSP50H6327XTSA1 BSP50H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586991C042987A469&compId=BSP50H6327XTSA1.pdf?ci_sign=542758f57bfb5844573fe09b784a03254dfb5c91 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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PVG612S-TPBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 750 Stücke:
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750+6.96 EUR
Mindestbestellmenge: 750
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BSP603S2L BSP603S2L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5949351EA6CD16469&compId=BSP603S2L.pdf?ci_sign=f8f722eb04392bc5053d8ee981b89e1032944b05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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BTS3050EJ BTS3050EJ INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB99598EF12749&compId=BTS3050EJ.pdf?ci_sign=89d5832899019faccad3ed7558afa1e764f18f05 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
49+1.47 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 44
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB541665492749&compId=BTS3035EJ.pdf?ci_sign=eb8aa60fb56b1ae50c345cbfb20b45b1de9f9ace Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.86 EUR
43+1.67 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 39
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AC27C82481C749&compId=BTS3035TF.pdf?ci_sign=b9e50ab739c8031922b9b9606b4a7ab5f5a679d1 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
39+1.86 EUR
41+1.74 EUR
62+1.16 EUR
66+1.09 EUR
1000+1.04 EUR
Mindestbestellmenge: 36
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
auf Bestellung 58 Stücke:
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18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
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DDB6U85N16LHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC287EE23F00D5&compId=DDB6U85N16LHOSA1.pdf?ci_sign=f2ace1df17ef1379975033d894477bb0156101e4 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 85A; Ifsm: 550A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.55kA
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. forward voltage: 1.44V
Load current: 85A
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DDB6U215N16LHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC1DE5F519E0D5&compId=DDB6U215N16LHOSA1.pdf?ci_sign=65908a27e9b4250566259e6669050f7b6a6dd511 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 215A; Ifsm: 1.95kA
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1.95kA
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M6 screws
Max. forward voltage: 1.61V
Load current: 215A
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DDB6U145N16LHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC10F1220FA0D5&compId=DDB6U145N16LHOSA1.pdf?ci_sign=b35af81a88c0199de10debefc62b61337cfd06cf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 145A; Ifsm: 1kA
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1kA
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. forward voltage: 1.43V
Load current: 145A
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BC847PNH6433XTMA1 BC847PNH6433XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: complementary pair
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BSS131H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD637F5D40575EA&compId=BSS131.pdf?ci_sign=3fa845932928938a385fc3c5d60733bac622727b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
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T640N12TOFXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBF8492F5415620C7&compId=T640Nxx.pdf?ci_sign=4085f29dbf5a72c355637ece05131ec336f0c7c6 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.2kV
Max. load current: 1.25kA
Load current: 644A
Gate current: 250mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 9.4kA
Features of semiconductor devices: phase controlled thyristor (PCT)
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BSZ240N12NS3GATMA1 BSZ240N12NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4064592BE11C&compId=BSZ240N12NS3G-DTE.pdf?ci_sign=8bc4c4584b83edfdf3c81c1c22139f55c4acf4d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 37A
On-state resistance: 24mΩ
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDD5BE257718BF&compId=IAUS165N08S5N029.pdf?ci_sign=394e5f40f7fae10bc3b56c2d70e20a1e0fc48e70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA57E319ED78BF&compId=IAUT165N08S5N029.pdf?ci_sign=1f09f84ff53a379526d421e7b22fd84aaec4af51 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
14+12.63 EUR
42+11.37 EUR
Mindestbestellmenge: 14
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BCR10PNH6327 BCR10PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869757B66B1A6469&compId=BCR10PNH6327.pdf?ci_sign=b2c2746e16a6aca8015036aa14272b1c552f7db2 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Case: SOT363
Frequency: 130MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C301A0AA3A611C&compId=BSC052N08NS5-DTE.pdf?ci_sign=79e01560211bef173b7b8e173045d7dfe6e4168d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IPA052N08NM5SXKSA1 IPA052N08NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 80V
Drain current: 46A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 256A
Mounting: THT
Produkt ist nicht verfügbar
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA7DB6BC51B820&compId=AIKQ120N60CT.pdf?ci_sign=b3d260d053566763d4d058bcc2c0c4e1c33ab1e5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
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BTS716GBXUMA1 BTS716GBXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF32CEFFBAB3D1&compId=BTS716GB.pdf?ci_sign=53be85562225c62950fcee8fa4c453731ad09b9a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
18+4.02 EUR
19+3.8 EUR
250+3.73 EUR
Mindestbestellmenge: 11
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IPD70N03S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.52 EUR
Mindestbestellmenge: 2500
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TLE4269GXUMA1 TLE4269GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADB0E59BA053D7&compId=TLE4269.pdf?ci_sign=ba658610b7eaf990cee200182c4a95c425cdf371 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
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IRFS4227TRLPBF IRFS4227TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C8327D1226F1A303005056AB0C4F&compId=irfs4227pbf.pdf?ci_sign=ba7e3a94bc4be1c6dca7d3cb57bd4f88452d247b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS4410TRLPBF IRFS4410TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C8C46B5B22F1A303005056AB0C4F&compId=irfs4410pbf.pdf?ci_sign=ccc955e36a01f6495227bf94e93c384689de9ff9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP120N04S302AKSA1 IPP120N04S302AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA888DB63FA143&compId=IPP120N04S302.pdf?ci_sign=121255400b0b3da3e0c94e4be5980b7bba7b7b21 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ T
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IPI120N04S402AKSA1 IPI120N04S402AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA595BDCC7A6143&compId=IPI120N04S402.pdf?ci_sign=775495591aaddac68fbafdad717a249f72a379b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IAUC120N04S6L005ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6L008ATMA1 IAUC120N04S6L008ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDA13A543838BF&compId=IAUC120N04S6L008.pdf?ci_sign=bdab0025d6d4f979e10d9a77ea4ed33ea87d6919 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IAUC120N04S6L009ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6N009ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD9EC30B7078BF&compId=IAUC120N04S6N009.pdf?ci_sign=a6dd2747ae99ac90ee67d33d57d4be89710a86dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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DD340N22SHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Type of semiconductor module: diode
Case: BG-PB50SB-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.31V
Load current: 330A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY8C29666-24LTXI INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Infineon Technologies microcontrollers
Description: IC: PIC microcontroller
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CY8C29666-24PVXIT INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Unclassified
Description: CY8C29666-24PVXIT
auf Bestellung 2000 Stücke:
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1000+14.83 EUR
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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5000+1.44 EUR
Mindestbestellmenge: 5000
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IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160C6XKSA1 IPA60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BE848BB6B1BF&compId=IPA60R160C6-DTE.pdf?ci_sign=cd4ab842ed2aa4816396ca230e9b369a01d43a25 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP92PH6327XTSA1 BSP92PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921DA8D59F31CC&compId=BSP92PH6327XTSA1-dte.pdf?ci_sign=c52b4a4e1e6278ec456dce8cdc96bdd2dbc992e9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.26A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
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99+0.73 EUR
129+0.56 EUR
153+0.47 EUR
175+0.41 EUR
277+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 99
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG7PH44K10D-EPBF IRG7PH44K10D-EPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFB6C5931F75EA&compId=IRG7PH44K10D-EPBF.pdf?ci_sign=0be09883d41e44c5ba5fa10572f388cbdd705251 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPD60R170CFD7 IPD60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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7+11.33 EUR
10+7.42 EUR
Mindestbestellmenge: 7
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
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6+12.51 EUR
7+11.84 EUR
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IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCA67145851BF&compId=IPW65R420CFD-DTE.pdf?ci_sign=0d183952d44e9096ba03d9cc41c07ddb26aec1c1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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2+35.75 EUR
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPW65R080CFDFKSA1 IPW65R080CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R045C7FKSA1 IPW65R045C7FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAFD47D4B11BF&compId=IPW65R045C7-DTE.pdf?ci_sign=8d648a3816212f060a23a19c0413946ef1df3829 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59547CA850A91BF&compId=IPW60R041P6-DTE.pdf?ci_sign=91a46ec4514d9fb6d80b53b249ca522f48eca87b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E04B6D6851BF&compId=IPW60R165CP-DTE.pdf?ci_sign=87e4656475c1ecd10952d47f3a3d223a71b93867 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R019C7FKSA1 IPW65R019C7FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAAD717D771BF&compId=IPW65R019C7-DTE.pdf?ci_sign=715ed5a1b31fe8938352d25ce1874b5c4aaf05bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-3
Produkt ist nicht verfügbar
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IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R065C7XKSA1 IPW65R065C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB141E3B7D1BF&compId=IPW65R065C7-DTE.pdf?ci_sign=b697dc6a7d602251722a4e5644a03c8ef601f8a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP50H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586991C042987A469&compId=BSP50H6327XTSA1.pdf?ci_sign=542758f57bfb5844573fe09b784a03254dfb5c91
BSP50H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Produkt ist nicht verfügbar
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PVG612S-TPBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+6.96 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
BSP603S2L pVersion=0046&contRep=ZT&docId=005056AB752F1EE5949351EA6CD16469&compId=BSP603S2L.pdf?ci_sign=f8f722eb04392bc5053d8ee981b89e1032944b05
BSP603S2L
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3050EJ pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB99598EF12749&compId=BTS3050EJ.pdf?ci_sign=89d5832899019faccad3ed7558afa1e764f18f05
BTS3050EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
49+1.47 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 44
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BTS3035EJ pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AB541665492749&compId=BTS3035EJ.pdf?ci_sign=eb8aa60fb56b1ae50c345cbfb20b45b1de9f9ace
BTS3035EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
43+1.67 EUR
75+0.96 EUR
79+0.92 EUR
Mindestbestellmenge: 39
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BTS3035TF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3AC27C82481C749&compId=BTS3035TF.pdf?ci_sign=b9e50ab739c8031922b9b9606b4a7ab5f5a679d1
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Turn-off time: 210µs
Turn-on time: 115µs
Technology: HITFET®
Kind of integrated circuit: low-side
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
39+1.86 EUR
41+1.74 EUR
62+1.16 EUR
66+1.09 EUR
1000+1.04 EUR
Mindestbestellmenge: 36
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IRF100B201 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
Mindestbestellmenge: 18
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DDB6U85N16LHOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC287EE23F00D5&compId=DDB6U85N16LHOSA1.pdf?ci_sign=f2ace1df17ef1379975033d894477bb0156101e4
Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 85A; Ifsm: 550A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 0.55kA
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. forward voltage: 1.44V
Load current: 85A
Produkt ist nicht verfügbar
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DDB6U215N16LHOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC1DE5F519E0D5&compId=DDB6U215N16LHOSA1.pdf?ci_sign=65908a27e9b4250566259e6669050f7b6a6dd511
Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 215A; Ifsm: 1.95kA
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1.95kA
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M6 screws
Max. forward voltage: 1.61V
Load current: 215A
Produkt ist nicht verfügbar
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DDB6U145N16LHOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CC10F1220FA0D5&compId=DDB6U145N16LHOSA1.pdf?ci_sign=b35af81a88c0199de10debefc62b61337cfd06cf
Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 145A; Ifsm: 1kA
Max. off-state voltage: 1.6kV
Max. forward impulse current: 1kA
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. forward voltage: 1.43V
Load current: 145A
Produkt ist nicht verfügbar
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BC847PNH6433XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c
BC847PNH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN / PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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BSS131H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD637F5D40575EA&compId=BSS131.pdf?ci_sign=3fa845932928938a385fc3c5d60733bac622727b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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T640N12TOFXPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBF8492F5415620C7&compId=T640Nxx.pdf?ci_sign=4085f29dbf5a72c355637ece05131ec336f0c7c6
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.2kV
Max. load current: 1.25kA
Load current: 644A
Gate current: 250mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 9.4kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar
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BSZ240N12NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC4064592BE11C&compId=BSZ240N12NS3G-DTE.pdf?ci_sign=8bc4c4584b83edfdf3c81c1c22139f55c4acf4d1
BSZ240N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 120V
Drain current: 37A
On-state resistance: 24mΩ
Produkt ist nicht verfügbar
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IAUS165N08S5N029ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDD5BE257718BF&compId=IAUS165N08S5N029.pdf?ci_sign=394e5f40f7fae10bc3b56c2d70e20a1e0fc48e70
IAUS165N08S5N029ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA57E319ED78BF&compId=IAUT165N08S5N029.pdf?ci_sign=1f09f84ff53a379526d421e7b22fd84aaec4af51
IAUT165N08S5N029ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+12.63 EUR
42+11.37 EUR
Mindestbestellmenge: 14
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BCR10PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869757B66B1A6469&compId=BCR10PNH6327.pdf?ci_sign=b2c2746e16a6aca8015036aa14272b1c552f7db2
BCR10PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Case: SOT363
Frequency: 130MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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BSC052N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C301A0AA3A611C&compId=BSC052N08NS5-DTE.pdf?ci_sign=79e01560211bef173b7b8e173045d7dfe6e4168d
BSC052N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 95A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA052N08NM5SXKSA1 Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a
IPA052N08NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 80V
Drain current: 46A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 256A
Mounting: THT
Produkt ist nicht verfügbar
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AIKQ120N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA7DB6BC51B820&compId=AIKQ120N60CT.pdf?ci_sign=b3d260d053566763d4d058bcc2c0c4e1c33ab1e5
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
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BTS716GBXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF32CEFFBAB3D1&compId=BTS716GB.pdf?ci_sign=53be85562225c62950fcee8fa4c453731ad09b9a
BTS716GBXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.14 EUR
18+4.02 EUR
19+3.8 EUR
250+3.73 EUR
Mindestbestellmenge: 11
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IPD70N03S4L04ATMA1 Infineon-IPD70N03S4L_04-DS-v02_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4271cfb3b9f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.52 EUR
Mindestbestellmenge: 2500
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TLE4269GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADB0E59BA053D7&compId=TLE4269.pdf?ci_sign=ba658610b7eaf990cee200182c4a95c425cdf371
TLE4269GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IRFS4227TRLPBF pVersion=0046&contRep=ZT&docId=E221C8327D1226F1A303005056AB0C4F&compId=irfs4227pbf.pdf?ci_sign=ba7e3a94bc4be1c6dca7d3cb57bd4f88452d247b
IRFS4227TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4410TRLPBF pVersion=0046&contRep=ZT&docId=E221C8C46B5B22F1A303005056AB0C4F&compId=irfs4410pbf.pdf?ci_sign=ccc955e36a01f6495227bf94e93c384689de9ff9
IRFS4410TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR9120NTRLPBF pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2
IRFR9120NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP120N04S302AKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA888DB63FA143&compId=IPP120N04S302.pdf?ci_sign=121255400b0b3da3e0c94e4be5980b7bba7b7b21
IPP120N04S302AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ T
Produkt ist nicht verfügbar
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IPI120N04S402AKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA595BDCC7A6143&compId=IPI120N04S402.pdf?ci_sign=775495591aaddac68fbafdad717a249f72a379b2
IPI120N04S402AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6L008ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDA13A543838BF&compId=IAUC120N04S6L008.pdf?ci_sign=bdab0025d6d4f979e10d9a77ea4ed33ea87d6919
IAUC120N04S6L008ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IAUC120N04S6L009ATMA1 Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6N009ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD9EC30B7078BF&compId=IAUC120N04S6N009.pdf?ci_sign=a6dd2747ae99ac90ee67d33d57d4be89710a86dc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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DD340N22SHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9DE5F0EB1BF3D1&compId=DD340N22S.pdf?ci_sign=e5eda1c795ac4dba183156bb0a2d75f5dfcbb752
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Type of semiconductor module: diode
Case: BG-PB50SB-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.31V
Load current: 330A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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CY8C29666-24LTXI Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PIC microcontroller
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+19.2 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
CY8C29666-24PVXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C29666-24PVXIT
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+14.83 EUR
Mindestbestellmenge: 1000
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IRF7759L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692
IRF7759L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Power dissipation: 125W
Case: DirectFET
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 200nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.44 EUR
Mindestbestellmenge: 5000
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IPT004N03LATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786
IPT004N03LATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BE848BB6B1BF&compId=IPA60R160C6-DTE.pdf?ci_sign=cd4ab842ed2aa4816396ca230e9b369a01d43a25
IPA60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP92PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921DA8D59F31CC&compId=BSP92PH6327XTSA1-dte.pdf?ci_sign=c52b4a4e1e6278ec456dce8cdc96bdd2dbc992e9
BSP92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.26A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
129+0.56 EUR
153+0.47 EUR
175+0.41 EUR
277+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 99
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IRFR4620TRLPBF pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG7PH44K10D-EPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFB6C5931F75EA&compId=IRG7PH44K10D-EPBF.pdf?ci_sign=0be09883d41e44c5ba5fa10572f388cbdd705251
IRG7PH44K10D-EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPD60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7255599D874A&compId=IPD60R170CFD7.pdf?ci_sign=87050184a9d4b4583b02a8c4dcb529f39bd56eee
IPD60R170CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
10+7.42 EUR
Mindestbestellmenge: 7
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IPW60R031CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.51 EUR
7+11.84 EUR
Mindestbestellmenge: 6
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IPW65R420CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCA67145851BF&compId=IPW65R420CFD-DTE.pdf?ci_sign=0d183952d44e9096ba03d9cc41c07ddb26aec1c1
IPW65R420CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IPW60R037P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPW65R080CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80
IPW65R080CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R041C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59527FBD16DF1BF&compId=IPW60R041C6-DTE.pdf?ci_sign=6837f4b5c1cab04482cc6edd814da7b3dad60443
IPW60R041C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R190P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R045C7FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAFD47D4B11BF&compId=IPW65R045C7-DTE.pdf?ci_sign=8d648a3816212f060a23a19c0413946ef1df3829
IPW65R045C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R041P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59547CA850A91BF&compId=IPW60R041P6-DTE.pdf?ci_sign=91a46ec4514d9fb6d80b53b249ca522f48eca87b
IPW60R041P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R165CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E04B6D6851BF&compId=IPW60R165CP-DTE.pdf?ci_sign=87e4656475c1ecd10952d47f3a3d223a71b93867
IPW60R165CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R019C7FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAAD717D771BF&compId=IPW65R019C7-DTE.pdf?ci_sign=715ed5a1b31fe8938352d25ce1874b5c4aaf05bb
IPW65R019C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d
IPW60R075CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-3
Produkt ist nicht verfügbar
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IPW60R160C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6
IPW60R160C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R065C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB141E3B7D1BF&compId=IPW65R065C7-DTE.pdf?ci_sign=b697dc6a7d602251722a4e5644a03c8ef601f8a2
IPW65R065C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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