Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152099) > Seite 2503 nach 2535
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BTS50080-1TMB | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT Case: PG-TO220-7-12 Supply voltage: 5.5...38V DC On-state resistance: 7mΩ Output current: 9.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Mounting: THT |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR182WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 12V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Collector current: 35mA |
auf Bestellung 1262 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5616H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX53H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 125MHz |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX5610H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
auf Bestellung 1745 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX56H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF5802TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 0.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1771 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSL207SPH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6 Case: PG-TSOP-6 Mounting: SMD Gate-source voltage: ±12V Kind of channel: enhancement Technology: OptiMOS™ P Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -6A Drain-source voltage: -20V On-state resistance: 41mΩ Power dissipation: 2W |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2132JPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Power: 2W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 675ns Turn-off time: 475ns |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2135JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Power: 2W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 0.6/1.2kV Turn-on time: 750ns Turn-off time: 700ns |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2233JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: SMD Case: PLCC44 Operating temperature: -40...125°C Kind of package: tube Output current: -420...200mA Turn-off time: 700ns Turn-on time: 750ns Power: 2W Number of channels: 6 Supply voltage: 10...20V DC Voltage class: 1.2kV Type of integrated circuit: driver Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL4310TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFB7434PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 317A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 216nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2181SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: undervoltage UVP |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW20N60S5 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: logic level Gate charge: 16.7nC |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 21A Pulsed drain current: 110A Power dissipation: 68W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFP3006PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3415PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3703PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Case: SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: 240V Drain current: 50mA On-state resistance: 6.5Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: depletion |
auf Bestellung 1543 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2304SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 185ns Turn-on time: 220ns Power: 625mW |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Leakage current: 0.2µA Load current: 20mA Capacitance: 0.45...7.2pF Type of diode: varicap Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Max. off-state voltage: 30V Case: SC79 |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 55A Power dissipation: 66W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Mounting: SMD On-state resistance: 16mΩ Drain current: 42A Gate-source voltage: ±20V Power dissipation: 60W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8 Mounting: SMD On-state resistance: 19mΩ Drain current: 50A Gate-source voltage: ±20V Power dissipation: 125W Drain-source voltage: 150V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TSDSON-8 |
auf Bestellung 1739 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Features of semiconductor devices: PIN; RF Case: SC79 Type of diode: switching Semiconductor structure: single diode Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Kind of package: reel; tape |
auf Bestellung 2280 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V |
auf Bestellung 4115 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF250P225 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W Mounting: THT Kind of channel: enhancement Technology: StrongIRFET™ Type of transistor: N-MOSFET Case: TO247AC Kind of package: tube Polarisation: unipolar Drain-source voltage: 250V Drain current: 49A Gate charge: 96nC On-state resistance: 22mΩ Power dissipation: 313W Gate-source voltage: ±20V |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhancement |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI1310NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4229PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 19A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFI4321PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 34A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4410ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 9.3mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI530NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 29.3nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1744 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Gate charge: 62.7nC On-state resistance: 52mΩ Power dissipation: 42W Gate-source voltage: ±20V Kind of package: tube Case: TO220FP Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB033N10N5LF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 108A Power dissipation: 179W Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPD031N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD075N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD135N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 31W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8736TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Frequency: 30kHz...1MHz Case: PG-DSO-20 Mounting: SMD Operating temperature: -25...125°C Topology: push-pull Application: SMPS Operating voltage: 11...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR2112PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.6W |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2112SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.25W |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2112STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 145ns Turn-on time: 205ns Power: 1.25W |
auf Bestellung 886 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR4105TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 25A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR4105ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR2121PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2...1A Power: 1W Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 5V Turn-on time: 150ns Turn-off time: 105ns |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED020I12-FI | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A Type of integrated circuit: driver Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: IGBT half-bridge Case: PG-DSO-18 Kind of package: reel; tape Mounting: SMD Protection: undervoltage UVP Output current: -2...1A Supply voltage: 0...5V; 14...18V Number of channels: 2 Voltage class: 1.2kV Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3 Type of transistor: IGBT Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.37µC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 256W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKQ75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: PG-TO247-3-46 Mounting: THT Kind of package: tube Gate charge: 530nC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 440W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.37µC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 237W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IKY75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3 Type of transistor: IGBT Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Case: TO247PLUS-4 Mounting: THT Kind of package: tube Turn-on time: 70ns Gate charge: 0.37µC Turn-off time: 335ns Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 256W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247PLUS-4 Mounting: THT Kind of package: tube Gate charge: 530nC Collector current: 75A Gate-emitter voltage: ±20V Power dissipation: 440W Pulsed collector current: 300A Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS4140N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 1Ω Supply voltage: 4.9...60V DC Technology: Classic PROFET |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3006PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50080-1TMB |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.89 EUR |
13+ | 5.66 EUR |
14+ | 5.35 EUR |
BFR182WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 35mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 35mA
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
676+ | 0.11 EUR |
782+ | 0.092 EUR |
863+ | 0.083 EUR |
910+ | 0.079 EUR |
BCP5616H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
245+ | 0.29 EUR |
320+ | 0.23 EUR |
335+ | 0.21 EUR |
BCX53H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
248+ | 0.29 EUR |
285+ | 0.25 EUR |
363+ | 0.2 EUR |
384+ | 0.19 EUR |
BCX5610H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
220+ | 0.33 EUR |
250+ | 0.29 EUR |
325+ | 0.22 EUR |
345+ | 0.21 EUR |
BCX56H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF5802TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
167+ | 0.43 EUR |
195+ | 0.37 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
IRLMS2002TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSL207SPH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6A
Drain-source voltage: -20V
On-state resistance: 41mΩ
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6A
Drain-source voltage: -20V
On-state resistance: 41mΩ
Power dissipation: 2W
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
119+ | 0.6 EUR |
217+ | 0.33 EUR |
230+ | 0.31 EUR |
1000+ | 0.3 EUR |
IR2132JPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.74 EUR |
12+ | 6.09 EUR |
13+ | 5.76 EUR |
IR2135JPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.22 EUR |
7+ | 10.75 EUR |
IR2233JPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Kind of package: tube
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Type of integrated circuit: driver
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Kind of package: tube
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Type of integrated circuit: driver
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.22 EUR |
8+ | 9.67 EUR |
IRFL4310TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB7434PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.4 EUR |
25+ | 2.97 EUR |
45+ | 1.62 EUR |
47+ | 1.53 EUR |
100+ | 1.47 EUR |
IR2181SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.75 EUR |
22+ | 3.4 EUR |
23+ | 3.22 EUR |
SPW20N60S5 | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.85 EUR |
18+ | 4.03 EUR |
19+ | 3.8 EUR |
IRLZ34NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
IRLZ34NSTRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP3006PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.83 EUR |
IRFP3415PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
IRFP3703PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
BSP129H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: 240V
Drain current: 50mA
On-state resistance: 6.5Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: depletion
auf Bestellung 1543 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
116+ | 0.62 EUR |
147+ | 0.49 EUR |
155+ | 0.46 EUR |
200+ | 0.44 EUR |
IRS2304SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
35+ | 2.1 EUR |
45+ | 1.62 EUR |
46+ | 1.56 EUR |
BB85702VH7902XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 0.45...7.2pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SC79
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 0.45...7.2pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SC79
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
172+ | 0.42 EUR |
186+ | 0.38 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
BAR6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
271+ | 0.26 EUR |
339+ | 0.21 EUR |
543+ | 0.13 EUR |
1011+ | 0.071 EUR |
1069+ | 0.067 EUR |
BSC123N08NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 66W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 66W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC160N10NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC190N15NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
auf Bestellung 1739 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 1.99 EUR |
BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
auf Bestellung 2280 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
275+ | 0.26 EUR |
455+ | 0.16 EUR |
500+ | 0.14 EUR |
635+ | 0.11 EUR |
BAR6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
auf Bestellung 4115 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
291+ | 0.25 EUR |
315+ | 0.23 EUR |
353+ | 0.2 EUR |
368+ | 0.19 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
IRF250P225 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Mounting: THT
Kind of channel: enhancement
Technology: StrongIRFET™
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Gate charge: 96nC
On-state resistance: 22mΩ
Power dissipation: 313W
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Mounting: THT
Kind of channel: enhancement
Technology: StrongIRFET™
Type of transistor: N-MOSFET
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Gate charge: 96nC
On-state resistance: 22mΩ
Power dissipation: 313W
Gate-source voltage: ±20V
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.74 EUR |
12+ | 6.13 EUR |
13+ | 5.81 EUR |
IRFZ46NLPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.57 EUR |
50+ | 1.44 EUR |
60+ | 1.2 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
IRFZ46NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
101+ | 0.71 EUR |
146+ | 0.49 EUR |
155+ | 0.46 EUR |
IRFI1310NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.42 EUR |
36+ | 2.03 EUR |
41+ | 1.76 EUR |
46+ | 1.57 EUR |
47+ | 1.53 EUR |
IRFI4229PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFI4321PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.22 EUR |
IRFI4410ZPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.59 EUR |
32+ | 2.27 EUR |
33+ | 2.2 EUR |
34+ | 2.16 EUR |
50+ | 2.07 EUR |
IRFI530NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.25 EUR |
65+ | 1.11 EUR |
83+ | 0.87 EUR |
88+ | 0.82 EUR |
1000+ | 0.79 EUR |
IRFI540NPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Power dissipation: 42W
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Power dissipation: 42W
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
48+ | 1.5 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
IPB033N10N5LF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD031N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
75+ | 0.96 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
1000+ | 0.68 EUR |
2500+ | 0.66 EUR |
IPD034N06N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.82 EUR |
33+ | 2.23 EUR |
38+ | 1.89 EUR |
51+ | 1.42 EUR |
54+ | 1.33 EUR |
56+ | 1.29 EUR |
IPD075N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
153+ | 0.47 EUR |
164+ | 0.44 EUR |
178+ | 0.4 EUR |
191+ | 0.38 EUR |
196+ | 0.37 EUR |
IPD135N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
139+ | 0.52 EUR |
146+ | 0.49 EUR |
159+ | 0.45 EUR |
169+ | 0.42 EUR |
IRF8736TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE2HS01GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2112PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.88 EUR |
23+ | 3.15 EUR |
25+ | 2.97 EUR |
IR2112SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
IR2112STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.25W
auf Bestellung 886 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
50+ | 2.04 EUR |
IRFR4105TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR4105ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2121PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.26 EUR |
24+ | 2.99 EUR |
26+ | 2.83 EUR |
28+ | 2.57 EUR |
2ED020I12-FI |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: IGBT half-bridge
Case: PG-DSO-18
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -2...1A
Supply voltage: 0...5V; 14...18V
Number of channels: 2
Voltage class: 1.2kV
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: IGBT half-bridge
Case: PG-DSO-18
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -2...1A
Supply voltage: 0...5V; 14...18V
Number of channels: 2
Voltage class: 1.2kV
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.28 EUR |
29+ | 2.53 EUR |
30+ | 2.4 EUR |
500+ | 2.32 EUR |
IKQ75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.44 EUR |
11+ | 6.58 EUR |
IKQ75N120CT2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 237W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 237W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 256W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS4140N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
49+ | 1.47 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
500+ | 1.09 EUR |
1000+ | 1.06 EUR |
IRFB3006PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.2 EUR |
24+ | 3.05 EUR |
25+ | 2.87 EUR |