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BSC12DN20NS3GATMA1 BSC12DN20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
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BSC16DN25NS3GATMA1 BSC16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
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BSC196N10NSGATMA1 BSC196N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
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FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Technology: High Current PROFET
Output voltage: 39V
auf Bestellung 1655 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.98 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 15
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BTS500251TEAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -0.29A
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
168+0.43 EUR
207+0.35 EUR
261+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 125
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
46+1.57 EUR
73+0.99 EUR
77+0.93 EUR
100+0.92 EUR
Mindestbestellmenge: 35
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
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ITS5215L ITS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Output current: 3.7A
Number of channels: 2
Supply voltage: 5.5...40V DC
auf Bestellung 749 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
27+2.73 EUR
32+2.26 EUR
34+2.13 EUR
35+2.06 EUR
Mindestbestellmenge: 24
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
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TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2BB0A8349AA14&compId=TLE7258D.pdf?ci_sign=5a9629aac6deb0bd4bee617b0a5ad7dd08881e4f Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 17 Stücke:
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7+10.62 EUR
8+10.02 EUR
14+9.84 EUR
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IRFH8307TRPBF IRFH8307TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC60B0A41D5EA&compId=IRFH8307TRPBF.pdf?ci_sign=876a001fc2583e04d2a0984eaf54ef3fec7518d8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFH8303TRPBF IRFH8303TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC4A9449955EA&compId=IRFH8303TRPBF.pdf?ci_sign=c05fd83e2320fd73815a9bd83f945615e1e10f47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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BAS3010A03WE6327HTSA1 BAS3010A03WE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 2995 Stücke:
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179+0.4 EUR
243+0.29 EUR
309+0.23 EUR
343+0.21 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 179
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IRFS4310ZTRLPBF IRFS4310ZTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IR2128SPBF IR2128SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
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26+2.77 EUR
31+2.3 EUR
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IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C30289CA55F1A303005056AB0C4F&compId=irfr3607pbf.pdf?ci_sign=c768d620ee5343d069fa0755a84c6ac97a7b6a80 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 40A
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 8.2µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 153A
Semiconductor structure: single diode
Power dissipation: 112W
Produkt ist nicht verfügbar
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CY7C2245KV18-450BZXI INFINEON TECHNOLOGIES Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
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IPA65R280E6XKSA1 IPA65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CF829F5191BF&compId=IPA65R280E6-DTE.pdf?ci_sign=df6262bcf2b5994d7d93a609776b6cb28dae31ed Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI65R280E6XKSA1 IPI65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB906C5082651BF&compId=IPI65R280E6-DTE.pdf?ci_sign=ab4d2af273f515dc14f003738d2594d1c4a055b3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9516FC6EB1BF&compId=IPP65R280E6-DTE.pdf?ci_sign=ab13db9f0175355a47c6d021969fb1b2df7d6eb9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R280E6ATMA1 IPB65R280E6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF300D338DF71BF&compId=IPB65R280E6-DTE.pdf?ci_sign=ae6c5b190a138856306f08169543d89672c5eac5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI65R280C6XKSA1 IPI65R280C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9055E1BFE71BF&compId=IPI65R280C6-DTE.pdf?ci_sign=bc972129de1b10df604776009be2c84a81d985a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR602XTSA1 BCR602XTSA1 INFINEON TECHNOLOGIES Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020 Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 10mA
Case: PG-SOT23-6
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 8...60V DC
Protection: overheating OTP
auf Bestellung 1566 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
110+0.65 EUR
146+0.49 EUR
154+0.46 EUR
250+0.45 EUR
Mindestbestellmenge: 91
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BSP78 BSP78 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869760D127D74469&compId=BSP78.pdf?ci_sign=a617bc4d5560c9afc8f0038f14af5aa2e51746cb Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2569 Stücke:
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21+3.47 EUR
32+2.27 EUR
53+1.37 EUR
55+1.3 EUR
1000+1.27 EUR
2000+1.26 EUR
Mindestbestellmenge: 21
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BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Power dissipation: 300W
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...175°C
Number of channels: 1
Output current: 36A
Output voltage: 49V
auf Bestellung 51 Stücke:
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12+6.21 EUR
13+5.88 EUR
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BTS5120-2EKA BTS5120-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987523C94E0469&compId=BTS5120-2EKA.pdf?ci_sign=2145b2d43fa43b21b36e2e06df885e96ad29b848 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
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21+3.46 EUR
32+2.26 EUR
52+1.39 EUR
55+1.32 EUR
1000+1.27 EUR
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BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Power dissipation: 300W
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...175°C
Number of channels: 1
Output current: 36A
Output voltage: 49V
auf Bestellung 81 Stücke:
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8+9.11 EUR
13+5.59 EUR
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IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Case: TO247AC
Drain-source voltage: 75V
Drain current: 350A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 380nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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9+8.32 EUR
15+4.82 EUR
16+4.55 EUR
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IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDFE7C04F673D1&compId=IPN80R1K2P7.pdf?ci_sign=016ba9a1e5be19df356a574b4dc7ffc00988a06e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
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DD100N16S DD100N16S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C84516482EE469&compId=DD100N16S.pdf?ci_sign=cddd1f5c7b5b531472b3ec26888b82e1ca2304e1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
Case: BG-SB20-1
auf Bestellung 7 Stücke:
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3+29.74 EUR
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BC857BE6327 BC857BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRF7351TRPBF IRF7351TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3544 Stücke:
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41+1.74 EUR
55+1.32 EUR
58+1.24 EUR
87+0.83 EUR
92+0.79 EUR
2000+0.76 EUR
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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDCEC83A08A7E27&compId=IRS2982S-DTE.pdf?ci_sign=5a1aaaa5e1d0c0d792620fbba830a4b9369ab7e8 Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78 Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 2638 Stücke:
Lieferzeit 14-21 Tag (e)
562+0.13 EUR
642+0.11 EUR
736+0.097 EUR
782+0.092 EUR
Mindestbestellmenge: 562
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BSC12DN20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060
BSC12DN20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSC16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b
BSC16DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355
BSC190N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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BSC196N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3
BSC196N10NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 2
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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TLS115B0LDXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48
TLS115B0LDXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IRF6648TRPBF pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410
IRF6648TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTS50080-1TEA pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Technology: High Current PROFET
Output voltage: 39V
auf Bestellung 1655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.98 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 15
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e
BSR316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -0.29A
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
168+0.43 EUR
207+0.35 EUR
261+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 125
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IDP15E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
46+1.57 EUR
73+0.99 EUR
77+0.93 EUR
100+0.92 EUR
Mindestbestellmenge: 35
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IDP15E65D1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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ITS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Output current: 3.7A
Number of channels: 2
Supply voltage: 5.5...40V DC
auf Bestellung 749 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
27+2.73 EUR
32+2.26 EUR
34+2.13 EUR
35+2.06 EUR
Mindestbestellmenge: 24
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IR2011PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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IRF7420TRPBF pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5
IRF7420TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ123N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452
BSZ123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa
TLE7250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72
TLE7251VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
TLE7268SKXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75
TLE7250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a
TLE7250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7258DXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2BB0A8349AA14&compId=TLE7258D.pdf?ci_sign=5a9629aac6deb0bd4bee617b0a5ad7dd08881e4f
TLE7258DXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7268LCXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3910TRLPBF pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5
IRFR3910TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM15H60GAXKMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.62 EUR
8+10.02 EUR
14+9.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8307TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC60B0A41D5EA&compId=IRFH8307TRPBF.pdf?ci_sign=876a001fc2583e04d2a0984eaf54ef3fec7518d8
IRFH8307TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8303TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCC4A9449955EA&compId=IRFH8303TRPBF.pdf?ci_sign=c05fd83e2320fd73815a9bd83f945615e1e10f47
IRFH8303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3010A03WE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF4AFAA84D4469&compId=BAS3010A03WE6327HT.pdf?ci_sign=4f99da10d7fca7b937a3b709418a4250a6e2bdef
BAS3010A03WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 1A
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
243+0.29 EUR
309+0.23 EUR
343+0.21 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4310ZTRLPBF pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d
IRFS4310ZTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2128SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD883EAC75EF5EA&compId=IR21271SPBF.pdf?ci_sign=0b961bfea082ea9ac0361090db99f96308795fe3
IR2128SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
31+2.3 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3607TRPBF pVersion=0046&contRep=ZT&docId=E221C30289CA55F1A303005056AB0C4F&compId=irfr3607pbf.pdf?ci_sign=c768d620ee5343d069fa0755a84c6ac97a7b6a80
IRFR3607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Case: PG-TO247-3
Load current: 40A
Max. forward voltage: 1.8V
Max. off-state voltage: 650V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Leakage current: 8.2µA
Technology: CoolSiC™ 5G; SiC
Max. forward impulse current: 153A
Semiconductor structure: single diode
Power dissipation: 112W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2CF829F5191BF&compId=IPA65R280E6-DTE.pdf?ci_sign=df6262bcf2b5994d7d93a609776b6cb28dae31ed
IPA65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB906C5082651BF&compId=IPI65R280E6-DTE.pdf?ci_sign=ab4d2af273f515dc14f003738d2594d1c4a055b3
IPI65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9516FC6EB1BF&compId=IPP65R280E6-DTE.pdf?ci_sign=ab13db9f0175355a47c6d021969fb1b2df7d6eb9
IPP65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R280E6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF300D338DF71BF&compId=IPB65R280E6-DTE.pdf?ci_sign=ae6c5b190a138856306f08169543d89672c5eac5
IPB65R280E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R280C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9055E1BFE71BF&compId=IPI65R280C6-DTE.pdf?ci_sign=bc972129de1b10df604776009be2c84a81d985a0
IPI65R280C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR602XTSA1 Infineon-BCR602-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855acb7e80020
BCR602XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PG-SOT23-6; 10mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Output current: 10mA
Case: PG-SOT23-6
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 8...60V DC
Protection: overheating OTP
auf Bestellung 1566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
110+0.65 EUR
146+0.49 EUR
154+0.46 EUR
250+0.45 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BSP78 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869760D127D74469&compId=BSP78.pdf?ci_sign=a617bc4d5560c9afc8f0038f14af5aa2e51746cb
BSP78
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2569 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
32+2.27 EUR
53+1.37 EUR
55+1.3 EUR
1000+1.27 EUR
2000+1.26 EUR
Mindestbestellmenge: 21
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BTS282ZE3230AKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062
BTS282ZE3230AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Power dissipation: 300W
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Mounting: THT
Kind of package: tube
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...175°C
Number of channels: 1
Output current: 36A
Output voltage: 49V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.02 EUR
12+6.21 EUR
13+5.88 EUR
Mindestbestellmenge: 8
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BTS5120-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586987523C94E0469&compId=BTS5120-2EKA.pdf?ci_sign=2145b2d43fa43b21b36e2e06df885e96ad29b848
BTS5120-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.22Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
auf Bestellung 1846 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
32+2.26 EUR
52+1.39 EUR
55+1.32 EUR
1000+1.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BTS282ZE3180AATMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BDBC4CB4FAEB3D7&compId=BTS282Z.pdf?ci_sign=79ed465bde4ec9f1be59da5cdcf7bae313c59062
BTS282ZE3180AATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Power dissipation: 300W
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...175°C
Number of channels: 1
Output current: 36A
Output voltage: 49V
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.11 EUR
13+5.59 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Case: TO247AC
Drain-source voltage: 75V
Drain current: 350A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 380nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.32 EUR
15+4.82 EUR
16+4.55 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDFE7C04F673D1&compId=IPN80R1K2P7.pdf?ci_sign=016ba9a1e5be19df356a574b4dc7ffc00988a06e
IPN80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Produkt ist nicht verfügbar
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DD100N16S pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C84516482EE469&compId=DD100N16S.pdf?ci_sign=cddd1f5c7b5b531472b3ec26888b82e1ca2304e1
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
Case: BG-SB20-1
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.74 EUR
Mindestbestellmenge: 3
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BC857BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a
BC857BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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IRF7351TRPBF pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897
IRF7351TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3544 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
55+1.32 EUR
58+1.24 EUR
87+0.83 EUR
92+0.79 EUR
2000+0.76 EUR
Mindestbestellmenge: 41
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BSC016N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586
BSC016N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2982STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDCEC83A08A7E27&compId=IRS2982S-DTE.pdf?ci_sign=5a1aaaa5e1d0c0d792620fbba830a4b9369ab7e8
IRS2982STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78
XMC4800 RELAX ETHERCAT KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Kit contents: development board with XMCmicrocontroller; expansion board
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4800
Components: XMC4800-F144
Number of add-on connectors: 2
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
auf Bestellung 2638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
562+0.13 EUR
642+0.11 EUR
736+0.097 EUR
782+0.092 EUR
Mindestbestellmenge: 562
Im Einkaufswagen  Stück im Wert von  UAH
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