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IPA032N06N3GXKSA1 IPA032N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99C743C5DE11C&compId=IPA032N06N3G-DTE.pdf?ci_sign=b6736c10eb5920ad8ce93c1b17bc3994112976c6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 IM69D120V01XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF4CFB1ADEB3D1&compId=IM69D120.pdf?ci_sign=7d5b6d5b6672ed91108f10e47edb50eaf5d9a8d2 Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130V01XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF5DF43158B3D1&compId=IM69D130.pdf?ci_sign=77c431dd75d1a04351a27800a6ef8a7d5fe39a18 Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Produkt ist nicht verfügbar
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IRLU120NPBF IRLU120NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.49 EUR
Mindestbestellmenge: 48
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IRLU3110ZPBF IRLU3110ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 29
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IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLU8743PBF IRLU8743PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E95506C3BF1A6F5005056AB5A8F&compId=irlr8743pbf.pdf?ci_sign=ec1c3384cca0d2986348f4dc5fc8865732992d42 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.57 EUR
54+1.33 EUR
59+1.23 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 28
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IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A61F1A6F5005056AB5A8F&compId=irfs4410.pdf?ci_sign=7c5f492f325e1029f7935d9e50a854b0b56bff5f description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Drain current: 96A
Drain-source voltage: 100V
Power dissipation: 250W
auf Bestellung 147 Stücke:
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25+2.86 EUR
38+1.89 EUR
62+1.16 EUR
66+1.09 EUR
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A68F1A6F5005056AB5A8F&compId=irfb4410zpbf.pdf?ci_sign=a2eb2dffb8f0130fe236daaa55b1a2a68f3cccae description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
34+2.13 EUR
46+1.59 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 31
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD055E8472B5EA&compId=IRFR3710ZTRPBF.pdf?ci_sign=7d07f7aee92f768313c1b0b456a26a45cfb77b9d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
57+1.27 EUR
65+1.12 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 44
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SPA15N60C3XKSA1 SPA15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
24+3.02 EUR
25+2.92 EUR
26+2.85 EUR
50+2.83 EUR
Mindestbestellmenge: 19
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AIHD15N60RATMA1 AIHD15N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA62BF3FDC1820&compId=AIHD15N60R.pdf?ci_sign=1030122affd7dc3ad569ab50afc6205a19c2f6a1 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1 AIHD15N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA66FDB7EC1820&compId=AIHD15N60RF.pdf?ci_sign=ca42b879f16dea63ab2fd70290170f430052ad65 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IRF2204PBF IRF2204PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.23 EUR
Mindestbestellmenge: 32
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DZ1070N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7480F1A6F5005056AB5A8F&compId=auirf7640s2.pdf?ci_sign=d080479f8227fc8010aaf755fcbe73634e14b94a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE4360D764D3D1&compId=IPN80R1K4P7.pdf?ci_sign=78fb10d99a14536f832bfbd20390774725556ad0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
75+0.96 EUR
140+0.51 EUR
148+0.48 EUR
1000+0.47 EUR
Mindestbestellmenge: 58
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BTS4142N BTS4142N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E84A11A0A469&compId=BTS4142N.pdf?ci_sign=3244447680817f5f79474ea635215c847d786be5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.4A
Supply voltage: 12...45V DC
Technology: Classic PROFET
Case: SOT223-3
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
39+1.87 EUR
41+1.77 EUR
500+1.73 EUR
Mindestbestellmenge: 19
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 322 Stücke:
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21+3.42 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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BGS14MPA9E6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC3E00A48B598BF&compId=BGS14MPA9E6327.pdf?ci_sign=c88d71efadde560d8c82b717917bce5aae918cc5 Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
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BSP762T BSP762T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697AB1C4CDAC469&compId=BSP762T.pdf?ci_sign=3e6d8828cac9092b5936c4f21f2326965e7952af Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 2439 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
41+1.77 EUR
43+1.67 EUR
1000+1.63 EUR
Mindestbestellmenge: 18
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BSP76E6433 BSP76E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975D357543C469&compId=BSP76E6433.pdf?ci_sign=ee41e26ebfd9d7f22ffc4ce630ef54f3ab400fc4 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
auf Bestellung 2201 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
50+1.43 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 37
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IPB027N10N3GATMA1 IPB027N10N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAA980C7A9211C&compId=IPB027N10N3G-DTE.pdf?ci_sign=65d103be878610d0403d27ac03d097367864db37 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAD6EAF5D211C&compId=IPB027N10N5-dte.pdf?ci_sign=46af40089252f374dc025d2954c3bc66941cc2cd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLR3636TRPBF IRLR3636TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11D881CECD5EA&compId=IRLR3636TRPBF.pdf?ci_sign=b6220a740730b6ab7b23975b33855f69170c505b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1541 Stücke:
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45+1.6 EUR
95+0.75 EUR
101+0.71 EUR
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BTS6163D BTS6163D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE5FC44976A0FA8&compId=BTS6163D-DTE.pdf?ci_sign=9d33c8266458148b300f88bc2036db936d9aeb6f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1944 Stücke:
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18+4.08 EUR
19+3.86 EUR
500+3.7 EUR
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BTS441RG BTS441RG INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C19A98E98469&compId=BTS441RG.pdf?ci_sign=e61366597abf2906cf65152ad268807663a7c035 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 975 Stücke:
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18+4 EUR
19+3.79 EUR
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BTS716GXUMA1 BTS716GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF308CE2FAF3D1&compId=BTS716G.pdf?ci_sign=b81448f0354de497b5d1a10935734c50374a9d3c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Technology: Classic PROFET
Power dissipation: 3.6W
Kind of output: N-Channel
Turn-off time: 0.25ms
auf Bestellung 890 Stücke:
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15+5.09 EUR
22+3.4 EUR
23+3.22 EUR
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EA36E40F0469&compId=BTS4175SGA.pdf?ci_sign=b4727641779625566a455f41863bca8a403915c1 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IRFR5410TRPBF IRFR5410TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1576 Stücke:
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44+1.66 EUR
62+1.15 EUR
71+1.01 EUR
141+0.51 EUR
150+0.48 EUR
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BSP742R BSP742R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869764CDAC0A6469&compId=BSP742R.pdf?ci_sign=d73026d39c5d188555036d786d3243364a24976c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1739 Stücke:
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33+2.22 EUR
54+1.33 EUR
57+1.26 EUR
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BSP742RIXUMA1 BSP742RIXUMA1 INFINEON TECHNOLOGIES Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Produkt ist nicht verfügbar
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IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783C8468413D2A259&compId=IKW75N60T.pdf?ci_sign=315235c5e21e2cdac3828b7fd0114f31bfa659fe Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
auf Bestellung 24 Stücke:
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8+9.08 EUR
10+7.35 EUR
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IRFS7730TRLPBF IRFS7730TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BC569945AE469&compId=IRFS7730PBF.pdf?ci_sign=e70874db5bf86843f0fde3878b11edd0ab11038e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 407nC
auf Bestellung 928 Stücke:
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18+3.98 EUR
20+3.73 EUR
38+1.89 EUR
40+1.79 EUR
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IRFR3910TRPBF IRFR3910TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 52W
auf Bestellung 1696 Stücke:
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73+0.99 EUR
79+0.91 EUR
84+0.86 EUR
120+0.6 EUR
127+0.57 EUR
500+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 73
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IRFR120ZTRPBF IRFR120ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C05ABFC02CF1A303005056AB0C4F&compId=irfr120zpbf.pdf?ci_sign=6db91d95a0791cfe8a3ae22805dafb5a07efec97 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS123NH6433XTMA1 BSS123NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Pulsed drain current: 0.77A
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™
auf Bestellung 1663 Stücke:
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209+0.34 EUR
275+0.26 EUR
323+0.22 EUR
505+0.14 EUR
610+0.12 EUR
1254+0.057 EUR
1327+0.054 EUR
Mindestbestellmenge: 209
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IRF5803TRPBF IRF5803TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F660770F4C8F1A303005056AB0C4F&compId=irf5803pbf.pdf?ci_sign=ea8fe42d8b837d27729d01f05b970f352b209186 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3689 Stücke:
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132+0.54 EUR
166+0.43 EUR
187+0.38 EUR
244+0.29 EUR
414+0.17 EUR
435+0.16 EUR
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
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31+2.33 EUR
33+2.17 EUR
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PVDZ172NPBF PVDZ172NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED681A961E89D5611BF&compId=pvdz172.pdf?ci_sign=57f8b5c83e175231261dae25c5b87c62d89bb814 description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
Max. operating current: 1.5A
Relay variant: MOSFET
Manufacturer series: PVDZ172NPbF
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: 0...60V DC
auf Bestellung 35 Stücke:
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5+17.12 EUR
9+8.29 EUR
10+7.85 EUR
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IRS21867STRPBF IRS21867STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7858F252E3D398745&compId=IRS21867SPBF.pdf?ci_sign=88dd69e07b9fd8b786cd4a2ea3106a4516073218 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1683 Stücke:
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32+2.3 EUR
33+2.19 EUR
34+2.16 EUR
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IRFB5615PBF IRFB5615PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A92F1A6F5005056AB5A8F&compId=irfb5615pbf.pdf?ci_sign=80600ca67fd3aa93379833fd484c2b89c0c90b93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 384 Stücke:
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38+1.93 EUR
49+1.49 EUR
58+1.24 EUR
69+1.04 EUR
73+0.99 EUR
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2EDL05N06PFXUMA1 2EDL05N06PFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
auf Bestellung 1261 Stücke:
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37+1.94 EUR
42+1.73 EUR
48+1.5 EUR
49+1.49 EUR
51+1.42 EUR
500+1.36 EUR
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2EDN7524FXTMA1 2EDN7524FXTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89FD3A06247BE27&compId=2EDN752x-DTE.pdf?ci_sign=73ce39ec47775568bc52b8a7a41d3188f5d88d83 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -5...5A
Mounting: SMD
Topology: MOSFET half-bridge
Number of channels: 2
Supply voltage: 4.5...20V
Kind of integrated circuit: gate driver; low-side
Voltage class: 20V
Type of integrated circuit: driver
auf Bestellung 1473 Stücke:
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59+1.22 EUR
85+0.85 EUR
90+0.8 EUR
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IRLR7833TRPBF IRLR7833TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222808C201668F1A303005056AB0C4F&compId=irlr7833pbf.pdf?ci_sign=2863666ec9e1fdcf6394e4e87da7650719bba319 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T BTS462T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2117 Stücke:
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21+3.43 EUR
33+2.19 EUR
35+2.07 EUR
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IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
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39+1.83 EUR
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Application: Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
auf Bestellung 6 Stücke:
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1+278.85 EUR
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 114 Stücke:
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29+2.49 EUR
33+2.19 EUR
43+1.67 EUR
46+1.59 EUR
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Power dissipation: 0.1W
Load current: 0.11A
Max. off-state voltage: 4V
Semiconductor structure: double series
auf Bestellung 1966 Stücke:
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122+0.59 EUR
149+0.48 EUR
168+0.43 EUR
194+0.37 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 122
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6 description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.57 EUR
16+4.68 EUR
17+4.42 EUR
1000+4.26 EUR
Mindestbestellmenge: 9
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IRF300P226 IRF300P226 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169 Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 191nC
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 300V
Power dissipation: 313W
Produkt ist nicht verfügbar
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 300V
Power dissipation: 313W
Produkt ist nicht verfügbar
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IRF3315STRLPBF IRF3315STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A1ADDD9CAD0E4A50&compId=irf3315spbf.pdf?ci_sign=0e1d63ccd450cb40e9a6b5e6f02a87536ad5f2e8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3703PBF IRF3703PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
164+0.43 EUR
Mindestbestellmenge: 164
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7986F2E9A110B&compId=BSS123NH6327XTSA1.pdf?ci_sign=9a7693d8bcaa2b783851a85885fc7097b4b467a7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 23198 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
521+0.14 EUR
575+0.12 EUR
822+0.087 EUR
1197+0.06 EUR
1266+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 417
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BSZ110N06NS3GATMA1 INFINEON TECHNOLOGIES BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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IPA032N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99C743C5DE11C&compId=IPA032N06N3G-DTE.pdf?ci_sign=b6736c10eb5920ad8ce93c1b17bc3994112976c6
IPA032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IM69D120V01XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF4CFB1ADEB3D1&compId=IM69D120.pdf?ci_sign=7d5b6d5b6672ed91108f10e47edb50eaf5d9a8d2
IM69D120V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFF5DF43158B3D1&compId=IM69D130.pdf?ci_sign=77c431dd75d1a04351a27800a6ef8a7d5fe39a18
IM69D130V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Produkt ist nicht verfügbar
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IRLU120NPBF description pVersion=0046&contRep=ZT&docId=E2227DC6E36566F1A303005056AB0C4F&compId=irlr120npbf.pdf?ci_sign=86901e93310b5239412647addcb5f48867ee4e34
IRLU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
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IRLU3110ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E95506BE0F1A6F5005056AB5A8F&compId=irlr3110zpbf.pdf?ci_sign=345190505f871965a8ce7cc3f8e02af74e6a3a8f
IRLU3110ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.47 EUR
52+1.39 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 29
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IRLU3410PBF pVersion=0046&contRep=ZT&docId=E2227F54094AD8F1A303005056AB0C4F&compId=irlr3410pbf.pdf?ci_sign=799d9cc7f112882e2790faffd45c9b81f115902a
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLU8743PBF description pVersion=0046&contRep=ZT&docId=E1C04E95506C3BF1A6F5005056AB5A8F&compId=irlr8743pbf.pdf?ci_sign=ec1c3384cca0d2986348f4dc5fc8865732992d42
IRLU8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
54+1.33 EUR
59+1.23 EUR
81+0.89 EUR
87+0.83 EUR
Mindestbestellmenge: 28
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IRFB4410PBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A61F1A6F5005056AB5A8F&compId=irfs4410.pdf?ci_sign=7c5f492f325e1029f7935d9e50a854b0b56bff5f
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Drain current: 96A
Drain-source voltage: 100V
Power dissipation: 250W
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
38+1.89 EUR
62+1.16 EUR
66+1.09 EUR
Mindestbestellmenge: 25
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IRFB4410ZPBF description pVersion=0046&contRep=ZT&docId=E1C04E5F284A68F1A6F5005056AB5A8F&compId=irfb4410zpbf.pdf?ci_sign=a2eb2dffb8f0130fe236daaa55b1a2a68f3cccae
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
34+2.13 EUR
46+1.59 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 31
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IRFR3710ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDD055E8472B5EA&compId=IRFR3710ZTRPBF.pdf?ci_sign=7d07f7aee92f768313c1b0b456a26a45cfb77b9d
IRFR3710ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
57+1.27 EUR
65+1.12 EUR
118+0.61 EUR
125+0.58 EUR
Mindestbestellmenge: 44
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SPA15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPA15N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
24+3.02 EUR
25+2.92 EUR
26+2.85 EUR
50+2.83 EUR
Mindestbestellmenge: 19
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AIHD15N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA62BF3FDC1820&compId=AIHD15N60R.pdf?ci_sign=1030122affd7dc3ad569ab50afc6205a19c2f6a1
AIHD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA66FDB7EC1820&compId=AIHD15N60RF.pdf?ci_sign=ca42b879f16dea63ab2fd70290170f430052ad65
AIHD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IRF2204PBF description pVersion=0046&contRep=ZT&docId=E21F5F1455BF3EF1A303005056AB0C4F&compId=irf2204pbf.pdf?ci_sign=9507b4eec742854faae9ef3d2df5d9f06c7206bc
IRF2204PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
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DZ1070N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N26K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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DZ1070N28K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9E046A6456469&compId=DZ1070N28K.pdf?ci_sign=ba4f97de0e0c3b62145bfd0da4b5a5576d7a686e
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
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AUIRF7640S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D7480F1A6F5005056AB5A8F&compId=auirf7640s2.pdf?ci_sign=d080479f8227fc8010aaf755fcbe73634e14b94a
AUIRF7640S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN80R1K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE4360D764D3D1&compId=IPN80R1K4P7.pdf?ci_sign=78fb10d99a14536f832bfbd20390774725556ad0
IPN80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
75+0.96 EUR
140+0.51 EUR
148+0.48 EUR
1000+0.47 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
BTS4142N pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E84A11A0A469&compId=BTS4142N.pdf?ci_sign=3244447680817f5f79474ea635215c847d786be5
BTS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.4A
Supply voltage: 12...45V DC
Technology: Classic PROFET
Case: SOT223-3
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
39+1.87 EUR
41+1.77 EUR
500+1.73 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N135R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FA3259EB0638BF&compId=IHW30N135R5.pdf?ci_sign=39630b0ae55cb15d14870d0c776223ecce32001c
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 21
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BGS14MPA9E6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC3E00A48B598BF&compId=BGS14MPA9E6327.pdf?ci_sign=c88d71efadde560d8c82b717917bce5aae918cc5
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP762T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697AB1C4CDAC469&compId=BSP762T.pdf?ci_sign=3e6d8828cac9092b5936c4f21f2326965e7952af
BSP762T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 2439 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
41+1.77 EUR
43+1.67 EUR
1000+1.63 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSP76E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975D357543C469&compId=BSP76E6433.pdf?ci_sign=ee41e26ebfd9d7f22ffc4ce630ef54f3ab400fc4
BSP76E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
auf Bestellung 2201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
50+1.43 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IPB027N10N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAA980C7A9211C&compId=IPB027N10N3G-DTE.pdf?ci_sign=65d103be878610d0403d27ac03d097367864db37
IPB027N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB027N10N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAAD6EAF5D211C&compId=IPB027N10N5-dte.pdf?ci_sign=46af40089252f374dc025d2954c3bc66941cc2cd
IPB027N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF11D881CECD5EA&compId=IRLR3636TRPBF.pdf?ci_sign=b6220a740730b6ab7b23975b33855f69170c505b
IRLR3636TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1541 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
45+1.6 EUR
95+0.75 EUR
101+0.71 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BTS6163D pVersion=0046&contRep=ZT&docId=005056AB752F1EE69EE5FC44976A0FA8&compId=BTS6163D-DTE.pdf?ci_sign=9d33c8266458148b300f88bc2036db936d9aeb6f
BTS6163D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1944 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.46 EUR
18+4.08 EUR
19+3.86 EUR
500+3.7 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BTS441RG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697C19A98E98469&compId=BTS441RG.pdf?ci_sign=e61366597abf2906cf65152ad268807663a7c035
BTS441RG
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
18+4 EUR
19+3.79 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BTS716GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889EF308CE2FAF3D1&compId=BTS716G.pdf?ci_sign=b81448f0354de497b5d1a10935734c50374a9d3c
BTS716GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Technology: Classic PROFET
Power dissipation: 3.6W
Kind of output: N-Channel
Turn-off time: 0.25ms
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.09 EUR
22+3.4 EUR
23+3.22 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BTS4175SGA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697EA36E40F0469&compId=BTS4175SGA.pdf?ci_sign=b4727641779625566a455f41863bca8a403915c1
BTS4175SGA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5410TRPBF description pVersion=0046&contRep=ZT&docId=E221C4D45D2323F1A303005056AB0C4F&compId=irfr5410pbf.pdf?ci_sign=35e831315d487b5d5818b7c8c15b727500ec9831
IRFR5410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
62+1.15 EUR
71+1.01 EUR
141+0.51 EUR
150+0.48 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BSP742R pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869764CDAC0A6469&compId=BSP742R.pdf?ci_sign=d73026d39c5d188555036d786d3243364a24976c
BSP742R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
33+2.22 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BSP742RIXUMA1 Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t
BSP742RIXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783C8468413D2A259&compId=IKW75N60T.pdf?ci_sign=315235c5e21e2cdac3828b7fd0114f31bfa659fe
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.08 EUR
10+7.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7730TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8BC569945AE469&compId=IRFS7730PBF.pdf?ci_sign=e70874db5bf86843f0fde3878b11edd0ab11038e
IRFS7730TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 407nC
auf Bestellung 928 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
20+3.73 EUR
38+1.89 EUR
40+1.79 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3910TRPBF pVersion=0046&contRep=ZT&docId=E221C4451FC688F1A303005056AB0C4F&compId=irfr3910pbf.pdf?ci_sign=fc030bc5c689d70170e8b659f1ec026a659ed3e5
IRFR3910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 52W
auf Bestellung 1696 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
79+0.91 EUR
84+0.86 EUR
120+0.6 EUR
127+0.57 EUR
500+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
IRFR120ZTRPBF pVersion=0046&contRep=ZT&docId=E221C05ABFC02CF1A303005056AB0C4F&compId=irfr120zpbf.pdf?ci_sign=6db91d95a0791cfe8a3ae22805dafb5a07efec97
IRFR120ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Pulsed drain current: 0.77A
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT23
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™
auf Bestellung 1663 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
275+0.26 EUR
323+0.22 EUR
505+0.14 EUR
610+0.12 EUR
1254+0.057 EUR
1327+0.054 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IRF5803TRPBF pVersion=0046&contRep=ZT&docId=E21F660770F4C8F1A303005056AB0C4F&compId=irf5803pbf.pdf?ci_sign=ea8fe42d8b837d27729d01f05b970f352b209186
IRF5803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3689 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
166+0.43 EUR
187+0.38 EUR
244+0.29 EUR
414+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C967A58C71BF&compId=IPA60R190P6-DTE.pdf?ci_sign=103642d66197600c23afd64a60a16e360317670a
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
33+2.17 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
PVDZ172NPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED681A961E89D5611BF&compId=pvdz172.pdf?ci_sign=57f8b5c83e175231261dae25c5b87c62d89bb814
PVDZ172NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
Max. operating current: 1.5A
Relay variant: MOSFET
Manufacturer series: PVDZ172NPbF
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: 0...60V DC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.12 EUR
9+8.29 EUR
10+7.85 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRS21867STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7858F252E3D398745&compId=IRS21867SPBF.pdf?ci_sign=88dd69e07b9fd8b786cd4a2ea3106a4516073218
IRS21867STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
auf Bestellung 1683 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
33+2.19 EUR
34+2.16 EUR
Mindestbestellmenge: 32
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IRFB5615PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A92F1A6F5005056AB5A8F&compId=irfb5615pbf.pdf?ci_sign=80600ca67fd3aa93379833fd484c2b89c0c90b93
IRFB5615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
49+1.49 EUR
58+1.24 EUR
69+1.04 EUR
73+0.99 EUR
Mindestbestellmenge: 38
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2EDL05N06PFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD805EAF74858BF&compId=2EDL05x06xx.pdf?ci_sign=7999722de50faf3fdb5dc2fbea2cef9b3aedf4c1
2EDL05N06PFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
42+1.73 EUR
48+1.5 EUR
49+1.49 EUR
51+1.42 EUR
500+1.36 EUR
Mindestbestellmenge: 37
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2EDN7524FXTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89FD3A06247BE27&compId=2EDN752x-DTE.pdf?ci_sign=73ce39ec47775568bc52b8a7a41d3188f5d88d83
2EDN7524FXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -5...5A
Mounting: SMD
Topology: MOSFET half-bridge
Number of channels: 2
Supply voltage: 4.5...20V
Kind of integrated circuit: gate driver; low-side
Voltage class: 20V
Type of integrated circuit: driver
auf Bestellung 1473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 59
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IRLR7833TRPBF pVersion=0046&contRep=ZT&docId=E222808C201668F1A303005056AB0C4F&compId=irlr7833pbf.pdf?ci_sign=2863666ec9e1fdcf6394e4e87da7650719bba319
IRLR7833TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS462T pVersion=0046&contRep=ZT&docId=E1C0475774F791F1A6F5005056AB5A8F&compId=BTS462T.pdf?ci_sign=1d5964edb3095262449921568cec353326577b95
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
33+2.19 EUR
35+2.07 EUR
Mindestbestellmenge: 21
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IRF1104PBF pVersion=0046&contRep=ZT&docId=E1C04E34F57A87F1A6F5005056AB5A8F&compId=irf1104.pdf?ci_sign=a8b80656af041888259f2e24ae234f5b866c90ce
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.83 EUR
Mindestbestellmenge: 39
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FP75R12KT4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A3979250FD616749&compId=FP75R12KT4.pdf?ci_sign=0a787b86b74eb0847aa8fc8fe9a9278194481dfb
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Application: Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+278.85 EUR
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IRFB4229PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B744F1A6F5005056AB5A8F&compId=irfb4229pbf.pdf?ci_sign=099d45bd879f089864a70a24e11bc96a170d58a6
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
33+2.19 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 29
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BAT1504WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFE1F57EAAE469&compId=BAT1503WE6327HTSA1.pdf?ci_sign=92ad46a24666fc88bcb2108d1b3c891a264bbdbd
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT323
Power dissipation: 0.1W
Load current: 0.11A
Max. off-state voltage: 4V
Semiconductor structure: double series
auf Bestellung 1966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
149+0.48 EUR
168+0.43 EUR
194+0.37 EUR
260+0.28 EUR
275+0.26 EUR
Mindestbestellmenge: 122
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BTS711L1 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B422D9468CA469&compId=BTS711L1.pdf?ci_sign=445bcc63dc051b22c43e87a03d39e4f9fd6897c6
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Mounting: SMD
Number of channels: 4
Case: DSO20
Supply voltage: 5...34V DC
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.57 EUR
16+4.68 EUR
17+4.42 EUR
1000+4.26 EUR
Mindestbestellmenge: 9
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IRF300P226 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5F4C3ED4E4A18&compId=IRF300P226.pdf?ci_sign=523cfb4517b457f02217f0b7903329d12f595169
IRF300P226
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 191nC
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 300V
Power dissipation: 313W
Produkt ist nicht verfügbar
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IRF300P227 pVersion=0046&contRep=ZT&docId=005056AB752F1ED887AB2225E6692A18&compId=IRF300P227.pdf?ci_sign=5c942898fab40cc8874ca0703a86883c323b92ab
IRF300P227
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 300V
Power dissipation: 313W
Produkt ist nicht verfügbar
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IRF3315STRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A1ADDD9CAD0E4A50&compId=irf3315spbf.pdf?ci_sign=0e1d63ccd450cb40e9a6b5e6f02a87536ad5f2e8
IRF3315STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3703PBF pVersion=0046&contRep=ZT&docId=E21F60B7C9FAF0F1A303005056AB0C4F&compId=irf3703pbf.pdf?ci_sign=09e7d33b780a65393a9f6976e90f8401411e90b8
IRF3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
164+0.43 EUR
Mindestbestellmenge: 164
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BSS123NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7986F2E9A110B&compId=BSS123NH6327XTSA1.pdf?ci_sign=9a7693d8bcaa2b783851a85885fc7097b4b467a7
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 23198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
521+0.14 EUR
575+0.12 EUR
822+0.087 EUR
1197+0.06 EUR
1266+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 417
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BSZ110N06NS3GATMA1 BSZ110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb15d4e8001a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
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