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IPW65R190CFDFKSA1 IPW65R190CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC3CBE2E551BF&compId=IPW65R190CFD-DTE.pdf?ci_sign=60664da403736c52558797a28919c148db632515 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8190E8C9A74A&compId=IPW60R170CFD7.pdf?ci_sign=32600af48a7fd72f2eedb26926faa7eb3392797a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R199CPFKSA1 IPW60R199CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DE899C65D1BF&compId=IPW60R199CP-DTE.pdf?ci_sign=8633e0ce83a8feedd0e7cc8d4606163b0f64beb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R299CPFKSA1 IPW60R299CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.79 EUR
14+5.21 EUR
15+5.02 EUR
16+4.75 EUR
50+4.56 EUR
Mindestbestellmenge: 13
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IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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9+7.99 EUR
16+4.62 EUR
17+4.38 EUR
Mindestbestellmenge: 9
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IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
16+4.72 EUR
19+3.92 EUR
20+3.72 EUR
Mindestbestellmenge: 15
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IPP65R045C7XKSA1 IPP65R045C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93B1544DB51BF&compId=IPP65R045C7-DTE.pdf?ci_sign=9a69c5defdebe05376b0727807904645fe24291c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R040C7XKSA1 IPP60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A9491AA591BF&compId=IPP60R040C7-DTE.pdf?ci_sign=c417b0959efb0186cff5427e8e587a59f63375d8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R380C6XKSA1 IPP60R380C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944278B8EFD1BF&compId=IPP60R380C6-DTE.pdf?ci_sign=feb2bbac4dafe8cc7a7757c9ffa2197f7917bd82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9424047AE91BF&compId=IPP65R095C7-DTE.pdf?ci_sign=f8ae09ca77c7b8a29e1ed1b178a9ae42b093d995 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R250CPXKSA1 IPP60R250CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R330P6XKSA1 IPP60R330P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949EBC6C5371BF&compId=IPP60R330P6-DTE.pdf?ci_sign=835db5ec47fa2437bf293263ec6006b6202591e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R520C6XKSA1 IPP60R520C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945E47B46B31BF&compId=IPP60R520C6-DTE.pdf?ci_sign=2631e395f3c3a1fbc28072667d6e48d6233109a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB90D7372A51BF&compId=IPP65R225C7-DTE.pdf?ci_sign=377275d8e623ac997e45525f6a965f7f2792db38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9625353B71BF&compId=IPP65R310CFD-DTE.pdf?ci_sign=e939a0d4ccdfde273e5b46a65ead8a2997f171df Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R420CFDXKSA1 IPP65R420CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9C936F5631BF&compId=IPP65R420CFD-DTE.pdf?ci_sign=ec1102f97d877cc4e6b9cdb8edb0b54fd9d7f4af Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R037C6FKSA1 IPW65R037C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAC6AC68FD1BF&compId=IPW65R037C6-DTE.pdf?ci_sign=f5c1bf79ad12e8c39d7b44b727cdf6d83cedefa8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R041CFDFKSA1 IPW65R041CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R070C6FKSA1 IPW65R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB2904349D1BF&compId=IPW65R070C6-DTE.pdf?ci_sign=96122680c69aef64fea226adc12d211f04bd9e24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R080CFDA IPW65R080CFDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R310CFDFKSA1 IPW65R310CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC95B371731BF&compId=IPW65R310CFD-DTE.pdf?ci_sign=fd54e2f6131f8472cd466427d66d47a1c1b2bd82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R660CFDFKSA1 IPW65R660CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCC2E3AB391BF&compId=IPW65R660CFD-DTE.pdf?ci_sign=51c33f24ae5199d9dcd374c039b7fc6d37c17cac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R041CFDFKSA2 INFINEON TECHNOLOGIES Infineon-IPW65R041CFD-DS-v02_00-en.pdf?fileId=db3a3043337a914d01338408155d60f9 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
30+12.08 EUR
Mindestbestellmenge: 30
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IPP60R520E6XKSA1 IPP60R520E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594626B85C671BF&compId=IPP60R520E6-DTE.pdf?ci_sign=451d5751e8f7a2f7efbbaa3ba6cdfd08d5699d0e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R600C6XKSA1 IPP60R600C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59443AC2F7E91BF&compId=IPP60R600C6-DTE.pdf?ci_sign=06c0f65cde006f41fea7237a7b1903f70b4f1120 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R600E6XKSA1 IPP60R600E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946109BF1D31BF&compId=IPP60R600E6-DTE.pdf?ci_sign=62239819e512eba0538b87b221df5f997083e9a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R950C6XKSA1 IPP60R950C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59440EFF63591BF&compId=IPP60R950C6-DTE.pdf?ci_sign=9b9b27af4c328200826a77dc19e26ae57dc4a757 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099CPAFKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
30+7.62 EUR
Mindestbestellmenge: 30
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IPW60R125CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
30+3.63 EUR
150+3.26 EUR
Mindestbestellmenge: 30
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CY8C4245LQQ-483 INFINEON TECHNOLOGIES Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
490+5.21 EUR
Mindestbestellmenge: 490
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CY7C4022KV13-933FCXI INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4042KV13-933FCXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4122KV13-933FCXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4142KV13-933FCXC INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4142KV13-933FCXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CYUSB3302-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1280 Stücke:
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260+5.73 EUR
Mindestbestellmenge: 260
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CYUSB3304-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
260+7.05 EUR
Mindestbestellmenge: 260
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CYUSB3314-88LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1815 Stücke:
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168+7.49 EUR
Mindestbestellmenge: 168
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BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4A23BA301E28&compId=BGT24MTR12.pdf?ci_sign=f624d640ac2e865a0dc9b9642ef785ba696a0b44 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
auf Bestellung 475 Stücke:
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7+10.67 EUR
Mindestbestellmenge: 7
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 9nC
Technology: CoolMOS™ P7
auf Bestellung 1476 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
88+0.82 EUR
104+0.69 EUR
107+0.67 EUR
110+0.65 EUR
115+0.63 EUR
Mindestbestellmenge: 51
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IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD30G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d57e7f5492 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
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BC857SH6327XTSA1 INFINEON TECHNOLOGIES bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Category: PNP SMD transistors
Description: Transistor: PNP x2
Type of transistor: PNP x2
auf Bestellung 12000 Stücke:
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3000+0.08 EUR
Mindestbestellmenge: 3000
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IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 730 Stücke:
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30+5.99 EUR
90+5.39 EUR
Mindestbestellmenge: 30
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2EDF7275FXUMA1 2EDF7275FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Output current: -8...4A
Mounting: SMD
Type of integrated circuit: driver
Supply voltage: 3...3.5V; 4.5...20V
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Case: PG-DSO-16
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Number of channels: 2
Voltage class: 650V
Produkt ist nicht verfügbar
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2EDF7175FXUMA1 2EDF7175FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Produkt ist nicht verfügbar
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2EDF7275FXUMA2 INFINEON TECHNOLOGIES Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.19 EUR
Mindestbestellmenge: 2500
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 68A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Polarisation: unipolar
Gate charge: 77nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R190CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC3CBE2E551BF&compId=IPW65R190CFD-DTE.pdf?ci_sign=60664da403736c52558797a28919c148db632515
IPW65R190CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037CSFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59549836BA8F1BF&compId=IPW60R040C7-DTE.pdf?ci_sign=fe636652d7245e19873032756aa4eb8485fd9ced
IPW60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524
IPW60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R160P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595325472C251BF&compId=IPW60R160P6-DTE.pdf?ci_sign=47ac9163035aeb74dc0348932449acacc7cc8b4b
IPW60R160P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R170CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8190E8C9A74A&compId=IPW60R170CFD7.pdf?ci_sign=32600af48a7fd72f2eedb26926faa7eb3392797a
IPW60R170CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R199CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DE899C65D1BF&compId=IPW60R199CP-DTE.pdf?ci_sign=8633e0ce83a8feedd0e7cc8d4606163b0f64beb2
IPW60R199CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R299CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DC1E9E42B1BF&compId=IPW60R299CP-DTE.pdf?ci_sign=8119d6d1da96d49cea4c2f247bd22ecf791abcfd
IPW60R299CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3
IPP60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895
IPP60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
14+5.21 EUR
15+5.02 EUR
16+4.75 EUR
50+4.56 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea
IPP60R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.99 EUR
16+4.62 EUR
17+4.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R165CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a
IPP60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.72 EUR
19+3.92 EUR
20+3.72 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R045C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93B1544DB51BF&compId=IPP65R045C7-DTE.pdf?ci_sign=9a69c5defdebe05376b0727807904645fe24291c
IPP65R045C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546
IPP60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A9491AA591BF&compId=IPP60R040C7-DTE.pdf?ci_sign=c417b0959efb0186cff5427e8e587a59f63375d8
IPP60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R380C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944278B8EFD1BF&compId=IPP60R380C6-DTE.pdf?ci_sign=feb2bbac4dafe8cc7a7757c9ffa2197f7917bd82
IPP60R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f
IPP65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2
IPP65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R095C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9424047AE91BF&compId=IPP65R095C7-DTE.pdf?ci_sign=f8ae09ca77c7b8a29e1ed1b178a9ae42b093d995
IPP65R095C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82
IPP60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R250CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594521AEF3011BF&compId=IPP60R250CP-DTE.pdf?ci_sign=079b2c37446f3fa596ccde728948be63713015c0
IPP60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R330P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949EBC6C5371BF&compId=IPP60R330P6-DTE.pdf?ci_sign=835db5ec47fa2437bf293263ec6006b6202591e4
IPP60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 93W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 93W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R520C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945E47B46B31BF&compId=IPP60R520C6-DTE.pdf?ci_sign=2631e395f3c3a1fbc28072667d6e48d6233109a7
IPP60R520C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R065C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243
IPP65R065C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R225C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB90D7372A51BF&compId=IPP65R225C7-DTE.pdf?ci_sign=377275d8e623ac997e45525f6a965f7f2792db38
IPP65R225C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R310CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9625353B71BF&compId=IPP65R310CFD-DTE.pdf?ci_sign=e939a0d4ccdfde273e5b46a65ead8a2997f171df
IPP65R310CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R420CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9C936F5631BF&compId=IPP65R420CFD-DTE.pdf?ci_sign=ec1102f97d877cc4e6b9cdb8edb0b54fd9d7f4af
IPP65R420CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R037C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAC6AC68FD1BF&compId=IPW65R037C6-DTE.pdf?ci_sign=f5c1bf79ad12e8c39d7b44b727cdf6d83cedefa8
IPW65R037C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R041CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95
IPW65R041CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB2904349D1BF&compId=IPW65R070C6-DTE.pdf?ci_sign=96122680c69aef64fea226adc12d211f04bd9e24
IPW65R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R080CFDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8
IPW65R080CFDA
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R310CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBC95B371731BF&compId=IPW65R310CFD-DTE.pdf?ci_sign=fd54e2f6131f8472cd466427d66d47a1c1b2bd82
IPW65R310CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R660CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCC2E3AB391BF&compId=IPW65R660CFD-DTE.pdf?ci_sign=51c33f24ae5199d9dcd374c039b7fc6d37c17cac
IPW65R660CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R041CFDFKSA2 Infineon-IPW65R041CFD-DS-v02_00-en.pdf?fileId=db3a3043337a914d01338408155d60f9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+12.08 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R520E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594626B85C671BF&compId=IPP60R520E6-DTE.pdf?ci_sign=451d5751e8f7a2f7efbbaa3ba6cdfd08d5699d0e
IPP60R520E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R600C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59443AC2F7E91BF&compId=IPP60R600C6-DTE.pdf?ci_sign=06c0f65cde006f41fea7237a7b1903f70b4f1120
IPP60R600C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R600E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946109BF1D31BF&compId=IPP60R600E6-DTE.pdf?ci_sign=62239819e512eba0538b87b221df5f997083e9a9
IPP60R600E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R950C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59440EFF63591BF&compId=IPP60R950C6-DTE.pdf?ci_sign=9b9b27af4c328200826a77dc19e26ae57dc4a757
IPP60R950C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+7.62 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+3.63 EUR
150+3.26 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245LQQ-483 Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+5.21 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
CY7C4022KV13-933FCXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C4042KV13-933FCXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4122KV13-933FCXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4142KV13-933FCXC
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
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CY7C4142KV13-933FCXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 933MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3302-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+5.73 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3304-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+7.05 EUR
Mindestbestellmenge: 260
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CYUSB3314-88LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
168+7.49 EUR
Mindestbestellmenge: 168
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BGT24MTR12E6327XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4A23BA301E28&compId=BGT24MTR12.pdf?ci_sign=f624d640ac2e865a0dc9b9642ef785ba696a0b44
BGT24MTR12E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.67 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R2K0P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1
IPD80R2K0P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Gate charge: 9nC
Technology: CoolMOS™ P7
auf Bestellung 1476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
88+0.82 EUR
104+0.69 EUR
107+0.67 EUR
110+0.65 EUR
115+0.63 EUR
Mindestbestellmenge: 51
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IDWD30G120C5XKSA1 Infineon-IDWD30G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d57e7f5492
IDWD30G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
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BC857SH6327XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2
Type of transistor: PNP x2
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+5.99 EUR
90+5.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7275FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDF7275FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Output current: -8...4A
Mounting: SMD
Type of integrated circuit: driver
Supply voltage: 3...3.5V; 4.5...20V
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Case: PG-DSO-16
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Number of channels: 2
Voltage class: 650V
Produkt ist nicht verfügbar
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2EDF7175FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDF7175FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Produkt ist nicht verfügbar
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2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.19 EUR
Mindestbestellmenge: 2500
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IRF100B202 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 68A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 221W
Polarisation: unipolar
Gate charge: 77nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
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