Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151636) > Seite 2509 nach 2528
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SPW16N50C3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL1404STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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AUIRL1404ZSTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Pulsed drain current: 790A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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CY14E101J2-SXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Kind of interface: serial Memory: 1Mb SRAM Case: SOIC8 Supply voltage: 4.5...5.5V DC Frequency: 3.4MHz Type of integrated circuit: SRAM memory Kind of memory: NV SRAM Memory organisation: 128kx8bit |
Produkt ist nicht verfügbar |
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Case: PG-TSDSON-8 Drain-source voltage: 25V Drain current: 40A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Mounting: SMD Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 4971 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2304STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK10G120C5XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W Semiconductor structure: single diode Max. off-state voltage: 1.2kV Case: PG-TO263-2 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 22µA Max. forward voltage: 2V Load current: 10A Max. forward impulse current: 84A Power dissipation: 165W Technology: CoolSiC™ 5G; SiC |
Produkt ist nicht verfügbar |
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IDK10G65C5 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W Semiconductor structure: single diode Max. off-state voltage: 650V Case: PG-TO263-2 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 2µA Max. forward voltage: 1.8V Load current: 10A Max. forward impulse current: 71A Power dissipation: 89W Technology: CoolSiC™ 5G; SiC |
Produkt ist nicht verfügbar |
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BSC112N06LDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: BSC112N06LDATMA1 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 175W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
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ISP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Industrial PROFET |
auf Bestellung 2679 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.15Ω Output voltage: 52V Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Mounting: SMD |
Produkt ist nicht verfügbar |
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BAT6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW Max. off-state voltage: 3V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.1W Type of diode: Schottky rectifying Mounting: SMD Case: SC79 |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ73A | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.8A Case: TO220 On-state resistance: 0.5Ω Mounting: THT Power: 40W |
Produkt ist nicht verfügbar |
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ISP13DP06NMSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR7440TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 125A Pulsed drain current: 760A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIR3240STR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Output current: 0.3A Number of channels: 1 Supply voltage: 4...36V DC Mounting: SMD Kind of package: reel; tape Voltage class: 40V |
Produkt ist nicht verfügbar |
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AUIR3242SXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Output current: 0.2A Number of channels: 1 Supply voltage: 3...36V DC Mounting: SMD Voltage class: 40V |
Produkt ist nicht verfügbar |
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BCW66KFE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz |
Produkt ist nicht verfügbar |
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BCW66KGE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 114000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R080P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPW60R080P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB60R080P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPZA60R080P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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IPP60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPB60R120P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 36nC |
Produkt ist nicht verfügbar |
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IPP60R125P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPW60R125P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Version: ESD Gate charge: 36nC |
Produkt ist nicht verfügbar |
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IPAN60R125PFD7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
Produkt ist nicht verfügbar |
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -190mA Power dissipation: 1W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TLS715B0NAV50XTSA1 | INFINEON TECHNOLOGIES |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 0.15A Case: PG-TSNP-7 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 4...40V |
Produkt ist nicht verfügbar |
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IPW60R125CPFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R125CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R125C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPP60R125C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPI60R125CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFS7430TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 426A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BSP772T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 1673 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP77E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V |
auf Bestellung 3057 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 428 Stücke: Lieferzeit 14-21 Tag (e) |
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PVT322ASPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 25mA; 170mA; SMT; SMD8 Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 0.17A Mounting: SMT Case: SMD8 Operating temperature: -40...85°C Insulation voltage: 4kV Control current max.: 25mA Body dimensions: 9.39x6.47x3.42mm Leads: for PCB |
auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3077PBFXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BSL296SNH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD Mounting: SMD Case: TSOP6 Drain current: 1.4A Version: ESD Type of transistor: N-MOSFET Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Polarisation: unipolar On-state resistance: 0.56Ω Drain-source voltage: 100V Power dissipation: 2W |
Produkt ist nicht verfügbar |
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IRFB3306PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 160A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP80R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 335 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K2P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD80R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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1EDC60I12AHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Output current: -6...6A Mounting: SMD Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V Case: PG-DSO-8 |
auf Bestellung 646 Stücke: Lieferzeit 14-21 Tag (e) |
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1EDC20H12AHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Output current: -2...2A Mounting: SMD Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1EDC60H12AHXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Output current: -6...6A Mounting: SMD Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V Case: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB320N20N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Drain-source voltage: 200V Drain current: 34A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS5030-2EKA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14 On-state resistance: 60mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Power dissipation: 2.1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS5016-2EKA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 28mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BTS50451EJAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP Operating temperature: -40...150°C Case: PG-DSO-8-EP Supply voltage: 5...28V DC On-state resistance: 45mΩ Output current: 4A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Power dissipation: 1.6W Technology: PROFET™+ 12V Kind of integrated circuit: high-side Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BTS50452EKAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS500101TADATMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50121EKBXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50201EKAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch Type of integrated circuit: power switch |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPI180N10N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 71W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW16N50C3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 2.02 EUR |
IRL1404STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRL1404ZSTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY14E101J2-SXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of interface: serial
Memory: 1Mb SRAM
Case: SOIC8
Supply voltage: 4.5...5.5V DC
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC8; -40÷85°C; serial; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Kind of interface: serial
Memory: 1Mb SRAM
Case: SOIC8
Supply voltage: 4.5...5.5V DC
Frequency: 3.4MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSZ018NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
77+ | 0.93 EUR |
80+ | 0.9 EUR |
81+ | 0.89 EUR |
100+ | 0.86 EUR |
IRS2304STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.82 EUR |
IDK10G120C5XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 22µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 84A
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 22µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 84A
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IDK10G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A
Max. forward impulse current: 71A
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A
Max. forward impulse current: 71A
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC112N06LDATMA1 |
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auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.64 EUR |
FP50R06W2E3B11BOMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Case: AG-EASY2B-2
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 2B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
auf Bestellung 2679 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
37+ | 1.96 EUR |
39+ | 1.84 EUR |
40+ | 1.82 EUR |
41+ | 1.74 EUR |
250+ | 1.7 EUR |
500+ | 1.69 EUR |
BSP752T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SC79
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SC79
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
131+ | 0.55 EUR |
166+ | 0.43 EUR |
233+ | 0.31 EUR |
271+ | 0.26 EUR |
421+ | 0.17 EUR |
BUZ73A |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISP13DP06NMSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
IRFR7440TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIR3240STR |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.3A
Number of channels: 1
Supply voltage: 4...36V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 40V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.3A
Number of channels: 1
Supply voltage: 4...36V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIR3242SXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW66KFE6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW66KGE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.055 EUR |
IPP60R080P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R080P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R080P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZA60R080P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R120P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R120P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R125P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R125P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.52 EUR |
13+ | 5.78 EUR |
14+ | 5.46 EUR |
IPL60R125P7AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPAN60R125PFD7SXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS192PH6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLS715B0NAV50XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R125CPFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.48 EUR |
28+ | 2.56 EUR |
IPP60R125CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.21 EUR |
10+ | 7.32 EUR |
IPW60R125C6FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R125C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPI60R125CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFS7430TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP772T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.53 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
500+ | 2.04 EUR |
BSP77E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 3057 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
35+ | 2.09 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
2000+ | 1.06 EUR |
BSP89H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
143+ | 0.5 EUR |
168+ | 0.43 EUR |
196+ | 0.37 EUR |
207+ | 0.35 EUR |
PVT322ASPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 25mA; 170mA; SMT; SMD8
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Insulation voltage: 4kV
Control current max.: 25mA
Body dimensions: 9.39x6.47x3.42mm
Leads: for PCB
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 25mA; 170mA; SMT; SMD8
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Insulation voltage: 4kV
Control current max.: 25mA
Body dimensions: 9.39x6.47x3.42mm
Leads: for PCB
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 13.99 EUR |
IRFB3077PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSL296SNH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFB3306PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.36 EUR |
33+ | 2.19 EUR |
80+ | 0.9 EUR |
84+ | 0.86 EUR |
IPP80R1K2P7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.94 EUR |
45+ | 1.62 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
150+ | 1.33 EUR |
200+ | 1.32 EUR |
IPU80R1K2P7AKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
101+ | 0.71 EUR |
114+ | 0.63 EUR |
115+ | 0.62 EUR |
125+ | 0.57 EUR |
IPD80R1K2P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1EDC60I12AHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.52 EUR |
23+ | 3.12 EUR |
24+ | 3.02 EUR |
25+ | 2.9 EUR |
1EDC20H12AHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1EDC60H12AHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB320N20N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS5030-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS5016-2EKA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS50451EJAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Operating temperature: -40...150°C
Case: PG-DSO-8-EP
Supply voltage: 5...28V DC
On-state resistance: 45mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.6W
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Operating temperature: -40...150°C
Case: PG-DSO-8-EP
Supply voltage: 5...28V DC
On-state resistance: 45mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.6W
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS50452EKAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.49 EUR |
BTS500101TADATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 5.36 EUR |
BTS50121EKBXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.86 EUR |
BTS50201EKAXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.52 EUR |
IPI180N10N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
52+ | 1.39 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |