Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (152100) > Seite 2509 nach 2535
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S29AL008J55BFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 55ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J55BFIR22 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 55ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J55TFIR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 55ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J55TFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 55ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J55TFNR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 55ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J55TFNR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 55ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BAN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFI022 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFM023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 70ns Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70BFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70TFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70TFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 70ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70TFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
S29AL008J70TFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Access time: 70ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SPD30P06PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3 Polarisation: unipolar Kind of channel: enhancement Case: PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -60V Drain current: -30A On-state resistance: 75mΩ Gate-source voltage: ±20V Power dissipation: 125W |
auf Bestellung 1075 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW Case: SOT143 Mounting: SMD Type of diode: Schottky switching Load current: 70mA Max. forward impulse current: 0.1A Power dissipation: 0.25W Max. off-state voltage: 70V Semiconductor structure: double independent |
auf Bestellung 2570 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR3410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±16V On-state resistance: 0.105Ω Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
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FF300R12KS4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 1.95kW Mechanical mounting: screw |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Mounting: SMD On-state resistance: 12mΩ Drain current: 33A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 30V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSC120N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8 Mounting: SMD On-state resistance: 12mΩ Drain current: 36A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 30V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCX41E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IPB80N06S405ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 320A Power dissipation: 107W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CY7C1520KV18-333BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 333MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRS21531DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality |
auf Bestellung 2087 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR400WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller Case: SOT343 Mounting: SMD Power: 0.33W Supply voltage: 1.6...18V DC Integrated circuit features: active bias controller Type of integrated circuit: driver Kind of package: reel; tape |
auf Bestellung 2877 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP034NE7N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1W Case: PG-SOT89 Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 On-state resistance: 90mΩ Drain current: 3.2A Drain-source voltage: 60V Gate-source voltage: ±20V |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 375W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Pulsed drain current: 1kA Power dissipation: 380W Case: D2PAK-7 Gate-source voltage: ±16V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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1EDF5673FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Mounting: SMD Case: PG-DSO-16 Number of channels: 1 Kind of integrated circuit: gate driver; high-side Supply voltage: 3...3.5V; 6.5...20V Integrated circuit features: galvanically isolated Technology: EiceDRIVER™; GaN Voltage class: 650V Topology: single transistor Type of integrated circuit: driver Kind of package: reel; tape Output current: -8...4A |
Produkt ist nicht verfügbar |
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IRFH7110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement |
auf Bestellung 4985 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFTS8342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement |
auf Bestellung 2938 Stücke: Lieferzeit 14-21 Tag (e) |
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2EDS8165HXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-16 Output current: -2...1A Number of channels: 2 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3...3.5V; 4.5...20V Voltage class: 650V |
Produkt ist nicht verfügbar |
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IPB180N06S4H1ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Pulsed drain current: 720A Power dissipation: 250W Case: PG-TO263-7-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T2 |
Produkt ist nicht verfügbar |
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IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.9A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.6kW Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |
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IRS21844STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 290ns Turn-on time: 720ns Power: 1W |
auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89 Type of transistor: NPN Case: SOT89 Mounting: SMD Power dissipation: 2W Collector current: 1A Collector-emitter voltage: 60V Frequency: 100MHz Polarisation: bipolar |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 500B SRAM; 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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AUIR3241STR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Power: 625mW Number of channels: 1 Supply voltage: 3...36V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Kind of package: reel Polarisation: unipolar Power dissipation: 4.5W Drain current: 12A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ITS4142N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.2Ω Kind of package: reel; tape Supply voltage: 12...45V DC Technology: Industrial PROFET Operating temperature: -30...85°C Power dissipation: 1.4W Turn-on time: 150µs Turn-off time: 0.1ms |
auf Bestellung 3313 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBTA92E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 50MHz |
auf Bestellung 1299 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7451TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 3.6A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF250P224 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 68A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of channel: enhancement Gate charge: 203nC Kind of package: tube Technology: StrongIRFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP60R190P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 28W Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP023N10N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCX42E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz |
auf Bestellung 1378 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR505E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 3282 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR503E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 7593 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5012SDA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 12mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET Kind of integrated circuit: high-side |
auf Bestellung 1014 Stücke: Lieferzeit 14-21 Tag (e) |
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S29AL008J55BFIR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55BFIR22 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFIR10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFIR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFNR10 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 55ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 55ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J55TFNR20 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 55ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 55ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BAN020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI022 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFM023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: reel; tape
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70BFN020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70TFI013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70TFI023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 70ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70TFN010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29AL008J70TFN020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Access time: 70ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SPD30P06PGBTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Polarisation: unipolar
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Polarisation: unipolar
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
auf Bestellung 1075 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.1 EUR |
45+ | 1.6 EUR |
51+ | 1.42 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
100+ | 0.99 EUR |
BAS7007E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
262+ | 0.27 EUR |
391+ | 0.18 EUR |
633+ | 0.11 EUR |
IRLR3410TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF300R12KS4 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 262.12 EUR |
BSC120N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSC120N03MSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCX41E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB80N06S405ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1520KV18-333BZXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS21531DSTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
auf Bestellung 2087 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
73+ | 0.99 EUR |
75+ | 0.96 EUR |
77+ | 0.93 EUR |
79+ | 0.92 EUR |
81+ | 0.89 EUR |
100+ | 0.87 EUR |
BCR400WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
334+ | 0.21 EUR |
374+ | 0.19 EUR |
428+ | 0.17 EUR |
468+ | 0.15 EUR |
500+ | 0.14 EUR |
556+ | 0.13 EUR |
582+ | 0.12 EUR |
IPP034NE7N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
22+ | 3.4 EUR |
24+ | 2.97 EUR |
BSS606NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: PG-SOT89
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 90mΩ
Drain current: 3.2A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1W
Case: PG-SOT89
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 90mΩ
Drain current: 3.2A
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
139+ | 0.51 EUR |
180+ | 0.4 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
IPB017N10N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLS3036TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.53 EUR |
23+ | 3.12 EUR |
25+ | 2.89 EUR |
1EDF5673FXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Mounting: SMD
Case: PG-DSO-16
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™; GaN
Voltage class: 650V
Topology: single transistor
Type of integrated circuit: driver
Kind of package: reel; tape
Output current: -8...4A
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Mounting: SMD
Case: PG-DSO-16
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™; GaN
Voltage class: 650V
Topology: single transistor
Type of integrated circuit: driver
Kind of package: reel; tape
Output current: -8...4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFH7110TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFTS9342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 4985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
249+ | 0.29 EUR |
269+ | 0.27 EUR |
285+ | 0.25 EUR |
424+ | 0.17 EUR |
447+ | 0.16 EUR |
IRFTS8342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
auf Bestellung 2938 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
207+ | 0.35 EUR |
414+ | 0.17 EUR |
439+ | 0.16 EUR |
2EDS8165HXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB180N06S4H1ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLTS2242TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2486 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
157+ | 0.46 EUR |
221+ | 0.32 EUR |
256+ | 0.28 EUR |
486+ | 0.15 EUR |
511+ | 0.14 EUR |
BCP55H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FF300R12KT4HOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRS21844STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
BCX55H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
XC822MT1FRIAAFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
52+ | 1.4 EUR |
70+ | 1.03 EUR |
74+ | 0.97 EUR |
IRFH5110TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIR3241STR |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Power: 625mW
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 40V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Power: 625mW
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLHS6276TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ITS4142N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-on time: 150µs
Turn-off time: 0.1ms
auf Bestellung 3313 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.68 EUR |
30+ | 2.4 EUR |
48+ | 1.5 EUR |
51+ | 1.42 EUR |
1000+ | 1.4 EUR |
2000+ | 1.36 EUR |
SMBTA92E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
auf Bestellung 1299 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
219+ | 0.33 EUR |
365+ | 0.2 EUR |
848+ | 0.084 EUR |
910+ | 0.079 EUR |
IRF7451TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF250P224 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R190P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.65 EUR |
33+ | 2.2 EUR |
34+ | 2.12 EUR |
35+ | 2.06 EUR |
IPA60R120P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP023N10N5AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCX42E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
auf Bestellung 1378 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
302+ | 0.24 EUR |
391+ | 0.18 EUR |
439+ | 0.16 EUR |
633+ | 0.11 EUR |
BCR505E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 3282 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
439+ | 0.16 EUR |
671+ | 0.11 EUR |
973+ | 0.074 EUR |
1029+ | 0.069 EUR |
BCR503E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 7593 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
232+ | 0.31 EUR |
265+ | 0.27 EUR |
391+ | 0.18 EUR |
468+ | 0.15 EUR |
893+ | 0.08 EUR |
944+ | 0.076 EUR |
BTS5012SDA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
auf Bestellung 1014 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.8 EUR |
30+ | 2.4 EUR |
33+ | 2.17 EUR |