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FS200R12KT4RB11BOSA1 INFINEON TECHNOLOGIES Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Produkt ist nicht verfügbar
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FS100R12KE3BOSA1 INFINEON TECHNOLOGIES INFNS28508-1.pdf?t.download=true&u=5oefqw Infineon-FS100R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4310be95324 Category: IGBT modules
Description: Module: IGBT; single diode; Ic: 140A; screw; 480W
Type of semiconductor module: IGBT
Semiconductor structure: single diode
Collector current: 140A
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 480W
auf Bestellung 86 Stücke:
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10+170.34 EUR
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IRS2004STRPBF INFINEON TECHNOLOGIES irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 5000 Stücke:
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2500+0.92 EUR
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BC817K40E6327HTSA1 INFINEON TECHNOLOGIES 4a-BC-817-40-E6433.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.047 EUR
Mindestbestellmenge: 3000
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BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 18000 Stücke:
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3000+0.056 EUR
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BCP5316H6327XTSA1 INFINEON TECHNOLOGIES bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: TO261-4
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 125MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.17 EUR
Mindestbestellmenge: 1000
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BC850CWH6327XTSA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.049 EUR
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IRFB4227PBFXKMA1 IRFB4227PBFXKMA1 INFINEON TECHNOLOGIES irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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20+3.58 EUR
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SPP15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 665 Stücke:
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50+1.74 EUR
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IPD65R380C6BTMA1 IPD65R380C6BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D433586DF1BF&compId=IPD65R380C6-DTE.pdf?ci_sign=9ea3afa8d9727bf8ea2124d28c7373c14a7dee27 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
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IPD65R380E6ATMA1 IPD65R380E6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6BTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA50R380CEXKSA2 IPA50R380CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE3A21EC971CC&compId=IPA50R380CE-DTE.pdf?ci_sign=ae539e39bc820f04d252019de81e3c5f64c466e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
64+1.12 EUR
70+1.04 EUR
85+0.85 EUR
90+0.8 EUR
250+0.77 EUR
Mindestbestellmenge: 46
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IRFP4468PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 290A
Drain-source voltage: 100V
Case: TO247AC
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS436L2GATMA1 INFINEON TECHNOLOGIES Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V
Technology: SIPMOS™
Power dissipation: 75W
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.73 EUR
Mindestbestellmenge: 1000
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PVG612APBF INFINEON TECHNOLOGIES pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 338 Stücke:
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50+12.64 EUR
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IRFP4668PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfp4668-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA030N10NF2SXKSA1 IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Gate charge: 154nC
On-state resistance: 3mΩ
Gate-source voltage: 20V
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 504 Stücke:
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50+2.53 EUR
200+2.27 EUR
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CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 3890 Stücke:
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490+1.59 EUR
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FP40R12KE3 FP40R12KE3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698978B6E7E2469&compId=FP40R12KE3.pdf?ci_sign=49b6b959139c32616d6c0ffbe2a4d7fbce40eaeb description Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Power dissipation: 200W
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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FP40R12KE3BPSA1 INFINEON TECHNOLOGIES Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189 Category: IGBT modules
Description: Module: IGBT
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
15+118.25 EUR
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IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IKCM10H60GAXKMA1 IKCM10H60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
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IRF7311TRPBF IRF7311TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D564C0834F1A303005056AB0C4F&compId=irf7311pbf.pdf?ci_sign=8996b5e8514953b18fbf8dc54ac6b3c8a3a84fbb Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7341GTRPBF IRF7341GTRPBF INFINEON TECHNOLOGIES irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3177 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
39+1.84 EUR
70+1.03 EUR
74+0.97 EUR
1000+0.96 EUR
2000+0.94 EUR
Mindestbestellmenge: 29
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IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3730 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
75+0.96 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 49
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AUIRFN8405TR INFINEON TECHNOLOGIES auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+1.82 EUR
Mindestbestellmenge: 4000
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IRF3007STRLPBF INFINEON TECHNOLOGIES irf3007spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 62A
Drain-source voltage: 75V
Produkt ist nicht verfügbar
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IRFR6215TRLPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Unclassified
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
490+2.23 EUR
Mindestbestellmenge: 490
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IPB034N06N3GATMA2 INFINEON TECHNOLOGIES Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
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1000+0.78 EUR
Mindestbestellmenge: 1000
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IRF7465TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7324TRPBF IRF7324TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F09AAF424F1A303005056AB0C4F&compId=irf7324pbf.pdf?ci_sign=7f4dd42a2e4cfa06767174805d80f49497471ba7 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD08N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Category: Transistors - Unclassified
Description: SPD08N50C3ATMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.79 EUR
Mindestbestellmenge: 2500
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PVT422S-TPBF INFINEON TECHNOLOGIES pvt422.pdf?fileId=5546d462533600a401535684473f2973 Category: One Phase Solid State Relays
Description: Relay: solid state; 25mA; SMT; SMD8; -40÷85°C; Leads: Gull Wing; 4kV
Type of relay: solid state
Control current max.: 25mA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
750+8.74 EUR
Mindestbestellmenge: 750
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IR2181STRPBF INFINEON TECHNOLOGIES ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.89 EUR
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SPA11N80C3XKSA2 INFINEON TECHNOLOGIES SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Electrical mounting: SMT
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.84 EUR
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.55 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 16
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IPP60R180C7XKSA1 IPP60R180C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A594EE1111BF&compId=IPP60R180C7-DTE.pdf?ci_sign=44faf0fccfdedd2c114610049948296d029df2e1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 22
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IPW60R180C7XKSA1 IPW60R180C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954AD1DDD011BF&compId=IPW60R180C7-DTE.pdf?ci_sign=0df0715cc8fabb1c958cc792a364ed24eb6bf983 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R180P7XKSA1 IPW60R180P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBE97122B28143&compId=IPW60R180P7.pdf?ci_sign=8c6446c121bdf566d55c0a9926608d4dd0617f73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPP60R180P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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IPAN60R180P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R180P7S-DS-v02_00-EN.pdf?fileId=5546d46269e1c0190169e2cd6eaa00a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.1 EUR
Mindestbestellmenge: 100
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BAR6302LE6327XTMA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: Unclassified
Description: BAR6302LE6327XTMA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.086 EUR
Mindestbestellmenge: 15000
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BAR6305WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.094 EUR
Mindestbestellmenge: 3000
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BAR6306WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.094 EUR
Mindestbestellmenge: 3000
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BAR6404WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW
Semiconductor structure: single diode
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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BAR6406E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common anode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.067 EUR
Mindestbestellmenge: 3000
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ICE3AR10080JZXKLA1 INFINEON TECHNOLOGIES Infineon-ICE3AR10080JZ-DS-v02_02-en.pdf?fileId=db3a3043324cae8c01326fade0414605 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 800V
Supply voltage: 10.5...27V
auf Bestellung 1920 Stücke:
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50+1.59 EUR
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CY8C6144LQI-S4F82 INFINEON TECHNOLOGIES Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906 Category: Integrated circuits - Unclassified
Description: CY8C6144LQI-S4F82
auf Bestellung 1560 Stücke:
Lieferzeit 14-21 Tag (e)
260+5.66 EUR
Mindestbestellmenge: 260
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IRFP3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF150P221AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Drain current: 186A
Drain-source voltage: 150V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IR2183STRPBF INFINEON TECHNOLOGIES ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.89 EUR
Mindestbestellmenge: 2500
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IRS2113STRPBF INFINEON TECHNOLOGIES irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC16; 2.5A; Ch: 2; MOSFET
Operating temperature: -40...125°C
Output current: 2.5A
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC16
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.17 EUR
Mindestbestellmenge: 1000
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFB03D87438E8A15&compId=FP15R12W1T4B3.pdf?ci_sign=87de13b40d54fef0761dd0ea90a3bd47bf610608 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.62 EUR
Mindestbestellmenge: 2
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IPB160N04S4H1ATMA1 INFINEON TECHNOLOGIES Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 160A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
Application: automotive industry
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.54 EUR
Mindestbestellmenge: 1000
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CY91F467DAPFVS-GS-UJE2 INFINEON TECHNOLOGIES Category: Unclassified
Description: CY91F467DAPFVS-GS-UJE2
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
24+96.18 EUR
Mindestbestellmenge: 24
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IRF150P220AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Produkt ist nicht verfügbar
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FS100R12KE3BOSA1 INFNS28508-1.pdf?t.download=true&u=5oefqw Infineon-FS100R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4310be95324
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single diode; Ic: 140A; screw; 480W
Type of semiconductor module: IGBT
Semiconductor structure: single diode
Collector current: 140A
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 480W
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+170.34 EUR
Mindestbestellmenge: 10
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
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BC817K40E6327HTSA1 4a-BC-817-40-E6433.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.047 EUR
Mindestbestellmenge: 3000
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BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
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BCP5316H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; TO261-4; automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: TO261-4
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 125MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.049 EUR
Mindestbestellmenge: 3000
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IRFB4227PBFXKMA1 irfb4227pbf.pdf?fileId=5546d462533600a401535615eb531e1f
IRFB4227PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SPP15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 15A; 156W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.74 EUR
Mindestbestellmenge: 50
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IPD65R380C6BTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8D433586DF1BF&compId=IPD65R380C6-DTE.pdf?ci_sign=9ea3afa8d9727bf8ea2124d28c7373c14a7dee27
IPD65R380C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R380E6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e
IPD65R380E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R380E6BTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8DE9D0B1231BF&compId=IPD65R380E6-DTE.pdf?ci_sign=60a21f457a80f66563697855df0e43ade7b4693e
IPD65R380E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R380CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABDEE3A21EC971CC&compId=IPA50R380CE-DTE.pdf?ci_sign=ae539e39bc820f04d252019de81e3c5f64c466e6
IPA50R380CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
64+1.12 EUR
70+1.04 EUR
85+0.85 EUR
90+0.8 EUR
250+0.77 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 290A
Drain-source voltage: 100V
Case: TO247AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS436L2GATMA1 Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V
Technology: SIPMOS™
Power dissipation: 75W
Active logical level: high
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.73 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+12.64 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
IPA030N10NF2SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Gate charge: 154nC
On-state resistance: 3mΩ
Gate-source voltage: 20V
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.53 EUR
200+2.27 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+1.59 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KE3 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698978B6E7E2469&compId=FP40R12KE3.pdf?ci_sign=49b6b959139c32616d6c0ffbe2a4d7fbce40eaeb
FP40R12KE3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Type of semiconductor module: IGBT
Application: Inverter
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 80A
Power dissipation: 200W
Case: AG-ECONO2-5
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FP40R12KE3BPSA1 Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+118.25 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKCM10H60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACDC852B5593D7&compId=IKCM10H60GA.pdf?ci_sign=4b5a98fd60881639d3b88e907a50e2961c030923
IKCM10H60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IRF7311TRPBF pVersion=0046&contRep=ZT&docId=E2219D564C0834F1A303005056AB0C4F&compId=irf7311pbf.pdf?ci_sign=8996b5e8514953b18fbf8dc54ac6b3c8a3a84fbb
IRF7311TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
39+1.84 EUR
70+1.03 EUR
74+0.97 EUR
1000+0.96 EUR
2000+0.94 EUR
Mindestbestellmenge: 29
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IRF7341TRPBFXTMA1 infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
75+0.96 EUR
206+0.35 EUR
218+0.33 EUR
Mindestbestellmenge: 49
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AUIRFN8405TR auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+1.82 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IRF3007STRLPBF irf3007spbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 62A
Drain-source voltage: 75V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8CMBR3106S-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+2.23 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
IPB034N06N3GATMA2 Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 100A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.78 EUR
Mindestbestellmenge: 1000
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IRF7465TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7324TRPBF pVersion=0046&contRep=ZT&docId=E2219F09AAF424F1A303005056AB0C4F&compId=irf7324pbf.pdf?ci_sign=7f4dd42a2e4cfa06767174805d80f49497471ba7
IRF7324TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: SPD08N50C3ATMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PVT422S-TPBF pvt422.pdf?fileId=5546d462533600a401535684473f2973
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; 25mA; SMT; SMD8; -40÷85°C; Leads: Gull Wing; 4kV
Type of relay: solid state
Control current max.: 25mA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+8.74 EUR
Mindestbestellmenge: 750
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IR2181STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.8A; Ch: 2; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.89 EUR
Mindestbestellmenge: 2500
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SPA11N80C3XKSA2 SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 800V; 11A; 34W; TO220-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Electrical mounting: SMT
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.84 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.55 EUR
37+1.97 EUR
39+1.86 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R180C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A594EE1111BF&compId=IPP60R180C7-DTE.pdf?ci_sign=44faf0fccfdedd2c114610049948296d029df2e1
IPP60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
23+3.17 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R180C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954AD1DDD011BF&compId=IPW60R180C7-DTE.pdf?ci_sign=0df0715cc8fabb1c958cc792a364ed24eb6bf983
IPW60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R180P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBE97122B28143&compId=IPW60R180P7.pdf?ci_sign=8c6446c121bdf566d55c0a9926608d4dd0617f73
IPW60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
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IPAN60R180P7SXKSA1 Infineon-IPAN60R180P7S-DS-v02_00-EN.pdf?fileId=5546d46269e1c0190169e2cd6eaa00a6
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.1 EUR
Mindestbestellmenge: 100
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BAR6302LE6327XTMA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BAR6302LE6327XTMA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.086 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.094 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 100mA; SOT323; Ufmax: 1.2V; 250mW
Semiconductor structure: common cathode
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 50V
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.094 EUR
Mindestbestellmenge: 3000
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BAR6404WH6327XTSA1 Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC70,SOT323; Ufmax: 1.1V; 250mW
Semiconductor structure: single diode
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAR6406E6327HTSA1 Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 100mA; SC59; 250mW
Semiconductor structure: common anode
Case: SC59
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 100mA
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ICE3AR10080JZXKLA1 Infineon-ICE3AR10080JZ-DS-v02_02-en.pdf?fileId=db3a3043324cae8c01326fade0414605
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 100kHz; DIP8; flyback; 85÷265VAC; Ubr: 800V; Usup: 10.5÷27V
Type of integrated circuit: PMIC
Frequency: 0.1MHz
Case: DIP8
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 800V
Supply voltage: 10.5...27V
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.59 EUR
Mindestbestellmenge: 50
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CY8C6144LQI-S4F82 Infineon-PSoC_6_MCU_CY8C61X4-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0276175906
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C6144LQI-S4F82
auf Bestellung 1560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+5.66 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 186A; TO247-3
Drain current: 186A
Drain-source voltage: 150V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E418FECF9E11C&compId=BSZ100N06NS-DTE.pdf?ci_sign=2c2fadeec5f1af9aa66da941965b2afe221347ae
BSZ100N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2183STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.89 EUR
Mindestbestellmenge: 2500
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IRS2113STRPBF irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC16; 2.5A; Ch: 2; MOSFET
Operating temperature: -40...125°C
Output current: 2.5A
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Mounting: SMD
Case: SOIC16
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.17 EUR
Mindestbestellmenge: 1000
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FP15R12W1T4_B3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFB03D87438E8A15&compId=FP15R12W1T4B3.pdf?ci_sign=87de13b40d54fef0761dd0ea90a3bd47bf610608
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.62 EUR
Mindestbestellmenge: 2
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IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 160A; 167W; TO263-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
Application: automotive industry
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.54 EUR
Mindestbestellmenge: 1000
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CY91F467DAPFVS-GS-UJE2
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY91F467DAPFVS-GS-UJE2
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+96.18 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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