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IRF7490TRPBF INFINEON TECHNOLOGIES irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 5.4A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IR2156STRPBF INFINEON TECHNOLOGIES ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Supply voltage: 10.5...16.5V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.62 EUR
Mindestbestellmenge: 2500
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IRLHS2242TRPBF IRLHS2242TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222778BA9DA1CF1A303005056AB0C4F&compId=irlhs2242pbf.pdf?ci_sign=e79e607340793a5ffa60bd3a338e088ab204535f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Power dissipation: 2.1W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
171+0.42 EUR
195+0.37 EUR
274+0.26 EUR
329+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 139
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IRF7313TRPBFXTMA1 INFINEON TECHNOLOGIES irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFI4212H-117PXKMA1 INFINEON TECHNOLOGIES irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Features of semiconductor devices: Half-Bridge Power MOSFET
Produkt ist nicht verfügbar
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IPW60R060P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
30+4.96 EUR
120+4.46 EUR
Mindestbestellmenge: 30
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IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC912B6685611C&compId=IPP120N20NFD-DTE.pdf?ci_sign=5d8d5dc96917148dec9e37cbde86228c5d8b765b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 12mΩ
Drain current: 84A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Kind of package: tube
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.55 EUR
15+4.9 EUR
16+4.63 EUR
Mindestbestellmenge: 10
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6500 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
2275+0.031 EUR
2405+0.03 EUR
Mindestbestellmenge: 600
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IPA040N06NXKSA1 IPA040N06NXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A76E68AEC11C&compId=IPA040N06N-DTE.pdf?ci_sign=1c3cfe6adaab2643d43a54e61f8a24ea06fa857c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
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IPP040N06NAKSA1 IPP040N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99844487E211C&compId=IPP040N06NAKSA1-DTE.pdf?ci_sign=67b0feee2a82cae98c5fb9bd1e9ad1a2ae08adee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
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IPA040N06NM5SXKSA1 IPA040N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Pulsed drain current: 288A
Produkt ist nicht verfügbar
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IAUZ40N06S5L050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 241A
Produkt ist nicht verfügbar
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IAUZ40N06S5N105ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 120A
Produkt ist nicht verfügbar
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IPD640N06LGBTMA1 INFINEON TECHNOLOGIES IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Technology: OptiMOS®
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 72A
Drain current: 12A
On-state resistance: 64mΩ
Power dissipation: 47W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.53 EUR
Mindestbestellmenge: 1000
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IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.3 EUR
Mindestbestellmenge: 2500
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TDA21472AUMA1 INFINEON TECHNOLOGIES Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PQFN; 70A; Ch: 1; MOSFET; 4.25÷16V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: PQFN
Output current: 70A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.25...16V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+4.29 EUR
Mindestbestellmenge: 5000
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IPF016N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 274A; 300W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+3.35 EUR
Mindestbestellmenge: 800
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IRFR540ZTRLPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IRF8734TRPBF IRF8734TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE68DFF128F1A303005056AB0C4F&compId=irf8734pbf.pdf?ci_sign=d66a79d1ccd4cf24541e0d32ca4477ec60165a7c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
79+0.91 EUR
150+0.48 EUR
158+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 55
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IRFS4620TRLPBF INFINEON TECHNOLOGIES irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS7004E6327HTSA1 BAS7004E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1457 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
376+0.19 EUR
687+0.1 EUR
1058+0.068 EUR
1119+0.064 EUR
Mindestbestellmenge: 200
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BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 170mA; 360mW; SOT23; SMT
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Electrical mounting: SMT
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Gate-source voltage: 20V
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000
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TC299TX128F300NBCKXUMA1 INFINEON TECHNOLOGIES TC290_97_98_99.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
500+86.97 EUR
Mindestbestellmenge: 500
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BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 1.5us; SOT23; Ufmax: 1.25V; Ir: 5nA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Max. load current: 0.2A
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.05 EUR
Mindestbestellmenge: 10000
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IRS2153DSTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Produkt ist nicht verfügbar
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IRS2109STRPBF INFINEON TECHNOLOGIES IRSDS11365-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.79 EUR
Mindestbestellmenge: 2500
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IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.76 EUR
Mindestbestellmenge: 2500
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IPB19DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; D2PAK,TO263
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 100V
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.84 EUR
Mindestbestellmenge: 1000
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IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.07 EUR
Mindestbestellmenge: 50
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BSC100N10NSFGATMA1 INFINEON TECHNOLOGIES BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.16 EUR
Mindestbestellmenge: 5000
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5A09C3C68469&compId=IRFB7730PBF.pdf?ci_sign=f1135565e8d5008d31f5ebd82a3d3e627ae7a3bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.27 EUR
24+3.09 EUR
Mindestbestellmenge: 20
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IRFS7730TRL7PP INFINEON TECHNOLOGIES infineon-irfs7730-7p-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Produkt ist nicht verfügbar
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IR2304STRPBF INFINEON TECHNOLOGIES ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Output current: 130mA
auf Bestellung 117500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRF7379TRPBF IRF7379TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Produkt ist nicht verfügbar
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IRFB4310ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA BTS5180-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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BSS139IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 250V; 100mA; 360mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 7.8Ω
Mounting: SMD
Gate charge: 2.3nC
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.079 EUR
Mindestbestellmenge: 3000
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IRF3805STRLPBF INFINEON TECHNOLOGIES irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF INFINEON TECHNOLOGIES irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 87A; 79W; D2PAK; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 17nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1 EUR
Mindestbestellmenge: 800
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IR2010STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.3 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 22
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IR2010SPBF IR2010SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IPP60R360P7XKSA1 IPP60R360P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA94E7C0F02143&compId=IPP60R360P7.pdf?ci_sign=0b12d4d4fd5f2cf02bb1bb741529ca54afdbe158 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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KP236-PS2GO-KIT KP236-PS2GO-KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1100; prototype board
Application: for pressure sensors
Kind of connector: pin strips; USB micro
Kit contents: prototype board
Family: XMC1100
Components: XMC1100; XMC4200
Number of add-on connectors: 1
Type of development kit: ARM Infineon
Kind of architecture: Cortex M0
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+37.12 EUR
Mindestbestellmenge: 2
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD1B7D4D39B8BF&compId=IPDD60R125G7.pdf?ci_sign=7ebc21da93799da986dcb0eebb06c33188e05b45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 120W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-HDSOP-10-1
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 0.125Ω
Drain current: 20A
Gate-source voltage: ±20V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
18+4.16 EUR
19+3.93 EUR
Mindestbestellmenge: 16
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CY8C5888FNI-LP214T INFINEON TECHNOLOGIES Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Category: Unclassified
Description: CY8C5888FNI-LP214T
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+32.05 EUR
Mindestbestellmenge: 2000
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IRFR2905ZTRPBF IRFR2905ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4FF090C2C8DD820&compId=IRFx2905ZPBF.pdf?ci_sign=3b07f6054abebbd0a9725d152405263260ab9c43 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2130STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 500mA; Ch: 6; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.5A
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.46 EUR
Mindestbestellmenge: 1000
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IR2132JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Output current: 0.2A
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
500+5.92 EUR
Mindestbestellmenge: 500
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IRS2001STRPBF INFINEON TECHNOLOGIES irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.92 EUR
Mindestbestellmenge: 2500
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BSZ086P03NS3EGATMA BSZ086P03NS3EGATMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9292ADCD3BB1CC&compId=BSZ086P03NS3EGATMA-DTE.pdf?ci_sign=69c493c9f9525a42e6ae68c562c52c19e9d62410 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 69W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 BSZ088N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E28059699C11C&compId=BSZ088N03MSG-DTE.pdf?ci_sign=11629a90dffdab400bce748e67528423bd3ce995 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
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BSZ084N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1FC933E9011C&compId=BSZ084N08NS5-DTE.pdf?ci_sign=3fec2ef640d7d5459287142b23f75e308e399b08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 63W
Polarisation: unipolar
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9293DA246CB1CC&compId=BSZ086P03NS3GATMA1-dte.pdf?ci_sign=d98c1dc5ac6383467a461262b29e3d9e0acd7ad7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
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BSZ088N03LSGATMA1 BSZ088N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E269AB1C6011C&compId=BSZ088N03LSG-DTE.pdf?ci_sign=3b3d13f98dd8170a53c03e2f4d12325b92340d2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
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XMC1202Q024X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Interface: GPIO; USIC x2
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
Memory: 16kB SRAM; 32kB FLASH
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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TLE6225GXUMA1 INFINEON TECHNOLOGIES TLE6225G.pdf Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.29 EUR
Mindestbestellmenge: 1000
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IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 5.4A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IR2156STRPBF ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Supply voltage: 10.5...16.5V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.62 EUR
Mindestbestellmenge: 2500
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IRLHS2242TRPBF pVersion=0046&contRep=ZT&docId=E222778BA9DA1CF1A303005056AB0C4F&compId=irlhs2242pbf.pdf?ci_sign=e79e607340793a5ffa60bd3a338e088ab204535f
IRLHS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.2A
Power dissipation: 2.1W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
171+0.42 EUR
195+0.37 EUR
274+0.26 EUR
329+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 139
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IRF7313TRPBFXTMA1 irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4212H-117PXKMA1 irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Features of semiconductor devices: Half-Bridge Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.96 EUR
120+4.46 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPP120N20NFDAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC912B6685611C&compId=IPP120N20NFD-DTE.pdf?ci_sign=5d8d5dc96917148dec9e37cbde86228c5d8b765b
IPP120N20NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 12mΩ
Drain current: 84A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Kind of package: tube
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.55 EUR
15+4.9 EUR
16+4.63 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BCX71HE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
2275+0.031 EUR
2405+0.03 EUR
Mindestbestellmenge: 600
Im Einkaufswagen  Stück im Wert von  UAH
IPA040N06NXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A76E68AEC11C&compId=IPA040N06N-DTE.pdf?ci_sign=1c3cfe6adaab2643d43a54e61f8a24ea06fa857c
IPA040N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP040N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99844487E211C&compId=IPP040N06NAKSA1-DTE.pdf?ci_sign=67b0feee2a82cae98c5fb9bd1e9ad1a2ae08adee
IPP040N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA040N06NM5SXKSA1 Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa
IPA040N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Drain-source voltage: 60V
Drain current: 51A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
Pulsed drain current: 288A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N06S5L050ATMA1 Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 241A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD640N06LGBTMA1 IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Technology: OptiMOS®
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 72A
Drain current: 12A
On-state resistance: 64mΩ
Power dissipation: 47W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.53 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.3 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TDA21472AUMA1 Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PQFN; 70A; Ch: 1; MOSFET; 4.25÷16V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: PQFN
Output current: 70A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.25...16V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+4.29 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 274A; 300W; D2PAK-7; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: 20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+3.35 EUR
Mindestbestellmenge: 800
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IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF8734TRPBF pVersion=0046&contRep=ZT&docId=E221AE68DFF128F1A303005056AB0C4F&compId=irf8734pbf.pdf?ci_sign=d66a79d1ccd4cf24541e0d32ca4477ec60165a7c
IRF8734TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
79+0.91 EUR
150+0.48 EUR
158+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7004E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
376+0.19 EUR
687+0.1 EUR
1058+0.068 EUR
1119+0.064 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 170mA; 360mW; SOT23; SMT
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Electrical mounting: SMT
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Gate-source voltage: 20V
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC299TX128F300NBCKXUMA1 TC290_97_98_99.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+86.97 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 1.5us; SOT23; Ufmax: 1.25V; Ir: 5nA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Max. load current: 0.2A
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.05 EUR
Mindestbestellmenge: 10000
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IRS2153DSTRPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Power: 625mW
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2109STRPBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
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IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.76 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPB19DP10NMATMA1 Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; D2PAK,TO263
Type of transistor: P-MOSFET
Technology: MOSFET
Drain-source voltage: 100V
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.84 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.07 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BSC100N10NSFGATMA1 BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7730PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5A09C3C68469&compId=IRFB7730PBF.pdf?ci_sign=f1135565e8d5008d31f5ebd82a3d3e627ae7a3bd
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.27 EUR
24+3.09 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7730TRL7PP infineon-irfs7730-7p-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4200F64F256ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4200F64F256ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-64
Produkt ist nicht verfügbar
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IR2304STRPBF ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Supply voltage: 10...20V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Output current: 130mA
auf Bestellung 117500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRF7379TRPBF pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8
IRF7379TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Produkt ist nicht verfügbar
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IRFB4310ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a
BTS5180-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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BSS139IXTSA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 250V; 100mA; 360mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 7.8Ω
Mounting: SMD
Gate charge: 2.3nC
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.079 EUR
Mindestbestellmenge: 3000
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IRF3805STRLPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 87A; 79W; D2PAK; SMT
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: N
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Gate charge: 17nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1 EUR
Mindestbestellmenge: 800
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IR2010STRPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 22
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IR2010SPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA93E4F97CE2DB20C4&compId=IR2010SPBF.pdf?ci_sign=7f2358c95a7abe46aba0e75f703e0870e922928f
IR2010SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IPP60R360P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA94E7C0F02143&compId=IPP60R360P7.pdf?ci_sign=0b12d4d4fd5f2cf02bb1bb741529ca54afdbe158
IPP60R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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KP236-PS2GO-KIT
KP236-PS2GO-KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1100; prototype board
Application: for pressure sensors
Kind of connector: pin strips; USB micro
Kit contents: prototype board
Family: XMC1100
Components: XMC1100; XMC4200
Number of add-on connectors: 1
Type of development kit: ARM Infineon
Kind of architecture: Cortex M0
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+37.12 EUR
Mindestbestellmenge: 2
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IPDD60R125G7XTMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD1B7D4D39B8BF&compId=IPDD60R125G7.pdf?ci_sign=7ebc21da93799da986dcb0eebb06c33188e05b45
IPDD60R125G7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 120W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-HDSOP-10-1
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 0.125Ω
Drain current: 20A
Gate-source voltage: ±20V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
18+4.16 EUR
19+3.93 EUR
Mindestbestellmenge: 16
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CY8C5888FNI-LP214T Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C5888FNI-LP214T
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+32.05 EUR
Mindestbestellmenge: 2000
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IRFR2905ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4FF090C2C8DD820&compId=IRFx2905ZPBF.pdf?ci_sign=3b07f6054abebbd0a9725d152405263260ab9c43
IRFR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2130STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC28; 500mA; Ch: 6; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC28
Output current: 0.5A
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.46 EUR
Mindestbestellmenge: 1000
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IR2132JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Output current: 0.2A
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+5.92 EUR
Mindestbestellmenge: 500
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IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 130mA
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
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BSZ086P03NS3EGATMA pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9292ADCD3BB1CC&compId=BSZ086P03NS3EGATMA-DTE.pdf?ci_sign=69c493c9f9525a42e6ae68c562c52c19e9d62410
BSZ086P03NS3EGATMA
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 69W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
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BSZ088N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E28059699C11C&compId=BSZ088N03MSG-DTE.pdf?ci_sign=11629a90dffdab400bce748e67528423bd3ce995
BSZ088N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
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BSZ084N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E1FC933E9011C&compId=BSZ084N08NS5-DTE.pdf?ci_sign=3fec2ef640d7d5459287142b23f75e308e399b08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 63W
Polarisation: unipolar
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Produkt ist nicht verfügbar
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BSZ086P03NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9293DA246CB1CC&compId=BSZ086P03NS3GATMA1-dte.pdf?ci_sign=d98c1dc5ac6383467a461262b29e3d9e0acd7ad7
BSZ086P03NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: -40A
Power dissipation: 52W
Polarisation: unipolar
Drain-source voltage: -30V
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Produkt ist nicht verfügbar
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BSZ088N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E269AB1C6011C&compId=BSZ088N03LSG-DTE.pdf?ci_sign=3b3d13f98dd8170a53c03e2f4d12325b92340d2a
BSZ088N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain current: 40A
Power dissipation: 35W
Polarisation: unipolar
Drain-source voltage: 30V
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Produkt ist nicht verfügbar
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XMC1202Q024X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Interface: GPIO; USIC x2
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 8
Number of inputs/outputs: 22
Memory: 16kB SRAM; 32kB FLASH
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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TLE6225GXUMA1 TLE6225G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.29 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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