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IRF7351TRPBF IRF7351TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3542 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
55+1.32 EUR
58+1.24 EUR
87+0.83 EUR
92+0.79 EUR
2000+0.76 EUR
Mindestbestellmenge: 41
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BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDCEC83A08A7E27&compId=IRS2982S-DTE.pdf?ci_sign=5a1aaaa5e1d0c0d792620fbba830a4b9369ab7e8 Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Case: PG-DSO-8
Topology: flyback
Mounting: SMD
Integrated circuit features: PWM
Output current: 200...400mA
Number of channels: 1
Operating voltage: 12.8...18V DC
Kind of integrated circuit: LED driver; SMPS controller
Produkt ist nicht verfügbar
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78 Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Components: XMC4800-F144
Family: XMC4800
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Kit contents: development board with XMCmicrocontroller; expansion board
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2638 Stücke:
Lieferzeit 14-21 Tag (e)
562+0.13 EUR
642+0.11 EUR
747+0.096 EUR
782+0.092 EUR
Mindestbestellmenge: 562
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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ISP752T ISP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Type of integrated circuit: power switch
Technology: Industrial PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.02 EUR
43+1.69 EUR
45+1.6 EUR
100+1.54 EUR
Mindestbestellmenge: 24
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TD122N22KOF TD122N22KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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BSZ025N04LSATMA1 BSZ025N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ028N04LSATMA1 BSZ028N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSS316NH6327XTSA1 BSS316NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Power dissipation: 0.5W
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4873 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
603+0.12 EUR
826+0.087 EUR
937+0.076 EUR
1092+0.065 EUR
1475+0.048 EUR
1558+0.046 EUR
Mindestbestellmenge: 455
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CE7C0F3D91BF&compId=IPA60R280P6-DTE.pdf?ci_sign=08d1d6408669e5a7e598c7bb06f1d1dca39becfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
29+2.52 EUR
36+2 EUR
44+1.66 EUR
46+1.56 EUR
Mindestbestellmenge: 26
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IPA60R199CPXKSA1 IPA60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280P7 IPA60R280P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2BEE6A4BB2749&compId=IPA60R280P7.pdf?ci_sign=c5d76bff142e564d760e07121e703fc630eade93 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280E6XKSA1 IPA60R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C3FCF1A931BF&compId=IPA60R280E6-DTE.pdf?ci_sign=ff2c74d461761c5dd4f594410d6756d5d454b154 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
40+1.83 EUR
44+1.66 EUR
46+1.59 EUR
48+1.5 EUR
Mindestbestellmenge: 35
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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10+7.88 EUR
11+6.78 EUR
16+4.72 EUR
17+4.46 EUR
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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13+5.76 EUR
Mindestbestellmenge: 13
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R080P7 IPA60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1CDA5B1716749&compId=IPA60R080P7.pdf?ci_sign=b19a92ace49bddc420c6fddfebd6f5304ce10d00 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Kind of channel: enhancement
Case: PG-SOT89
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Power dissipation: 1W
Gate-source voltage: ±20V
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
133+0.54 EUR
176+0.41 EUR
296+0.24 EUR
315+0.23 EUR
Mindestbestellmenge: 103
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.21 EUR
23+3.15 EUR
25+2.97 EUR
Mindestbestellmenge: 12
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6695 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
468+0.15 EUR
554+0.13 EUR
625+0.11 EUR
703+0.1 EUR
946+0.076 EUR
1000+0.072 EUR
3000+0.069 EUR
Mindestbestellmenge: 313
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BSP296L6327 BSP296L6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
205+0.35 EUR
224+0.32 EUR
240+0.3 EUR
252+0.28 EUR
266+0.27 EUR
271+0.26 EUR
Mindestbestellmenge: 179
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FP20R06W1E3B11BOMA1 FP20R06W1E3B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Output current: -10...10A
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Case: PG-MDIP24
Kind of package: tube
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 26.1W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.03 EUR
8+9.02 EUR
9+8.54 EUR
14+8.49 EUR
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F4150R12KS4BOSA1 F4150R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 76A
Pulsed drain current: 400A
Power dissipation: 120W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Active logical level: low
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V
Integrated circuit features: thermal protection
Application: automotive industry
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
800+6.64 EUR
Mindestbestellmenge: 800
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IRF1010ZSTRLPBF INFINEON TECHNOLOGIES irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.68 EUR
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IPD040N03LF2SATMA1 INFINEON TECHNOLOGIES IPD040N03LF2SATMA1.pdf Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
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2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 40A; 37W; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
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5000+0.3 EUR
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BSP125H6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 120mA; 1.8W; SOT223; SMT
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Electrical mounting: SMT
Drain-source voltage: 600V
Drain current: 0.12A
Gate charge: 4.4nC
On-state resistance: 25Ω
Power dissipation: 1.8W
Gate-source voltage: 20V
Application: automotive industry
Polarisation: N
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.34 EUR
Mindestbestellmenge: 4000
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ESD130B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
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15000+0.037 EUR
Mindestbestellmenge: 15000
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ESD131B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26W; 6V; 3.5A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Type of diode: TVS
Leakage current: 0.1µA
Number of channels: 1
Max. forward impulse current: 3.5A
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Peak pulse power dissipation: 26W
Case: 0201; 0603
Semiconductor structure: bidirectional
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15000+0.046 EUR
Mindestbestellmenge: 15000
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CY8C5287AXI-LP095 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
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90+13.71 EUR
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PVT412APBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Manufacturer series: PV
auf Bestellung 167 Stücke:
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50+8.82 EUR
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; -40÷85°C; 4kV
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 1304 Stücke:
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50+8.82 EUR
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PVT412PBF INFINEON TECHNOLOGIES pvt412.pdf?fileId=5546d462533600a401535684376e296b description Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.43 EUR
100+4.9 EUR
Mindestbestellmenge: 50
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BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Electrical mounting: SMT
Gate charge: 1nC
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: 20V
Drain-source voltage: 60V
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 30A; 100W; DPAK; automotive industry
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
On-state resistance: 15.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1432500 Stücke:
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2500+0.65 EUR
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IPD30N06S4L23ATMA2 INFINEON TECHNOLOGIES Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 30A; 36W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.51 EUR
Mindestbestellmenge: 2500
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
26+2.85 EUR
27+2.69 EUR
100+2.59 EUR
Mindestbestellmenge: 14
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.26A
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.17 EUR
Mindestbestellmenge: 2500
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BAS2103WE6433HTMA1 INFINEON TECHNOLOGIES bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 50ns; SOD323; Ufmax: 1.25V; 100nA
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 1.25V
Max. off-state voltage: 200V
Application: automotive industry
Mounting: SMD
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRLR3636TRLPBF INFINEON TECHNOLOGIES IRSDS10828-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.43 EUR
Mindestbestellmenge: 2500
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IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.58 EUR
Mindestbestellmenge: 200
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PVT312PBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 IRSD-S-A0001048699-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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BTS118D BTS118D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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IKCM15F60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
14+13.17 EUR
42+11.85 EUR
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BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Application: automotive industry
Gate charge: 1nC
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.048 EUR
Mindestbestellmenge: 10000
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FP50R12KT3BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7E5DA4B53C0C4&compId=FP50R12KT3BOSA1.pdf?ci_sign=e5bfa2ac21af8ba4412256f70bb668388033ff0a Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F475R12KS4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B427F7AA228469&compId=F4-75R12KS4.pdf?ci_sign=8a7c38558ac90818b8a03233c57e0f409e79df4d Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS150R12KT4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
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IRF7351TRPBF pVersion=0046&contRep=ZT&docId=E221A0DE506CD3F1A303005056AB0C4F&compId=irf7351pbf.pdf?ci_sign=4edfec3e68a3b8645ed0cd18f9eb510a94e2a897
IRF7351TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
55+1.32 EUR
58+1.24 EUR
87+0.83 EUR
92+0.79 EUR
2000+0.76 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C26917EEFD011C&compId=BSC016N06NS-DTE.pdf?ci_sign=f270d603e1689ebd89b70b26697c16daf5a93586
BSC016N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS2982STRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDCEC83A08A7E27&compId=IRS2982S-DTE.pdf?ci_sign=5a1aaaa5e1d0c0d792620fbba830a4b9369ab7e8
IRS2982STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Case: PG-DSO-8
Topology: flyback
Mounting: SMD
Integrated circuit features: PWM
Output current: 200...400mA
Number of channels: 1
Operating voltage: 12.8...18V DC
Kind of integrated circuit: LED driver; SMPS controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783FA69A7DB8B0259&compId=IKD04N60RF.pdf?ci_sign=a5c7bbdc7a42672854858807ced6a63c83269dd0
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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XMC4800 RELAX ETHERCAT KIT pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AA70FC05948749&compId=xmc4700_4800.pdf?ci_sign=35a67d5ce72214e4df01e9ba14465e384383fc78
XMC4800 RELAX ETHERCAT KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Kind of connector: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Components: XMC4800-F144
Family: XMC4800
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Kit contents: development board with XMCmicrocontroller; expansion board
Produkt ist nicht verfügbar
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IPW60R070C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E708A74B71BF&compId=IPW60R070C6-DTE.pdf?ci_sign=a76dc45b803a2fd0375610b9d1330af0e3b06965
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR108SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SOT363
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2638 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
562+0.13 EUR
642+0.11 EUR
747+0.096 EUR
782+0.092 EUR
Mindestbestellmenge: 562
Im Einkaufswagen  Stück im Wert von  UAH
BCR129E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5A30C55F6E469&compId=BCR129.pdf?ci_sign=9d2fde11dd5e1f6f9d964f9ce96dfdb605cdc8bf
BCR129E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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ISP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698A4A77C194469&compId=ISP752T.pdf?ci_sign=32c403eb98204275a7023500201c5de23626c9ff
ISP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Type of integrated circuit: power switch
Technology: Industrial PROFET
Case: SO8
Kind of output: N-Channel
Kind of integrated circuit: high-side
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
43+1.69 EUR
45+1.6 EUR
100+1.54 EUR
Mindestbestellmenge: 24
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TD122N22KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E80995079E469&compId=TD122N22KOF.pdf?ci_sign=9c41f21baa72cbf2c5dd63103eb17375e3837443
TD122N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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BSZ025N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF4E393A0611C&compId=BSZ025N04LS-DTE.pdf?ci_sign=c7e189cc621b48c52fd66a8f0c37be3c84d10bf3
BSZ025N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ028N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DF8A4764E611C&compId=BSZ028N04LS-DTE.pdf?ci_sign=b47980fc1bac52431ab9bce3c8240b67030a1471
BSZ028N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSS316NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E99C6B1FB10B&compId=BSS316NH6327XTSA1.pdf?ci_sign=7c35a3609d9f80ea9f399ecf296e3a2809057254
BSS316NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Power dissipation: 0.5W
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
603+0.12 EUR
826+0.087 EUR
937+0.076 EUR
1092+0.065 EUR
1475+0.048 EUR
1558+0.046 EUR
Mindestbestellmenge: 455
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FP06R12W1T4B3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8B20C73D5053D7&compId=FP06R12W1T4B3.pdf?ci_sign=b0d07d5c11c3511c198ac0969a13834d175d08d9
FP06R12W1T4B3BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Collector current: 6A
Pulsed collector current: 12A
Power dissipation: 94W
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IKCM10L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE25CCB96B3D7&compId=IKCM10L60GA.pdf?ci_sign=9cbc71647cd20c3c843610d6c4b7ffd632abf6e7
IKCM10L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Produkt ist nicht verfügbar
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IPA60R280P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594CE7C0F3D91BF&compId=IPA60R280P6-DTE.pdf?ci_sign=08d1d6408669e5a7e598c7bb06f1d1dca39becfb
IPA60R280P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
29+2.52 EUR
36+2 EUR
44+1.66 EUR
46+1.56 EUR
Mindestbestellmenge: 26
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IPA60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B4891FF1D1BF&compId=IPA60R199CP-DTE.pdf?ci_sign=308ea5579321e81455d0dbd6fd33a8b7f65b595d
IPA60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2BEE6A4BB2749&compId=IPA60R280P7.pdf?ci_sign=c5d76bff142e564d760e07121e703fc630eade93
IPA60R280P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C3FCF1A931BF&compId=IPA60R280E6-DTE.pdf?ci_sign=ff2c74d461761c5dd4f594410d6756d5d454b154
IPA60R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.83 EUR
44+1.66 EUR
46+1.59 EUR
48+1.5 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B6BA600A71BF&compId=IPA60R125CP-DTE.pdf?ci_sign=56ee650e05b7d6255b4dfadc36d35067290454a6
IPA60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.88 EUR
11+6.78 EUR
16+4.72 EUR
17+4.46 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594B83B2F8B51BF&compId=IPA60R125C6-DTE.pdf?ci_sign=595dee37e8707623102b3824db3424cc58000d4f
IPA60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.76 EUR
Mindestbestellmenge: 13
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IPA60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594D3ADBD8771BF&compId=IPA60R125P6-DTE.pdf?ci_sign=509a3cf4af1c085ef703fbfb7483c4f16578c9d6
IPA60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1CDA5B1716749&compId=IPA60R080P7.pdf?ci_sign=b19a92ace49bddc420c6fddfebd6f5304ce10d00
IPA60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA927B55CB5EB1CC&compId=BSS192PH6327FTSA1-dte.pdf?ci_sign=15b0307eacafb5f99389df84c9a392d42ed54513
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Kind of channel: enhancement
Case: PG-SOT89
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Power dissipation: 1W
Gate-source voltage: ±20V
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
133+0.54 EUR
176+0.41 EUR
296+0.24 EUR
315+0.23 EUR
Mindestbestellmenge: 103
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IPB60R060P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89680FE3A9654F3D6&compId=IPB60R060P7.pdf?ci_sign=ce2fbf2f237547b81b51c17c17d79d3436fb6d82
IPB60R060P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595451D559B31BF&compId=IPW60R099P6-DTE.pdf?ci_sign=64f61ef499400e8d208bb826aca30234098f363e
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
23+3.15 EUR
25+2.97 EUR
Mindestbestellmenge: 12
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BSS131H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7A747833B910B&compId=BSS131H6327XTSA1.pdf?ci_sign=1a0db14b486c9c03a4ac7e87d14adcf0bc42587e
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 6695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
468+0.15 EUR
554+0.13 EUR
625+0.11 EUR
703+0.1 EUR
946+0.076 EUR
1000+0.072 EUR
3000+0.069 EUR
Mindestbestellmenge: 313
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BSP296L6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6320436FF95EA&compId=BSP296.pdf?ci_sign=f8eb2a9eb8bf8b297e995d348fb8d11f95f840e1
BSP296L6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP296NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A71BCC5D0C110B&compId=BSP296NH6327XTSA1.pdf?ci_sign=62688a05fa70037902c602082913e2323a4fa340
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
205+0.35 EUR
224+0.32 EUR
240+0.3 EUR
252+0.28 EUR
266+0.27 EUR
271+0.26 EUR
Mindestbestellmenge: 179
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FP20R06W1E3B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E55D7107CA0469&compId=FP20R06W1E3B11.pdf?ci_sign=69ad90c278e3c2bf446e00a2bb3a887e5cb3f63e
FP20R06W1E3B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 20A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Application: Inverter
Power dissipation: 94W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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IGCM10F60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACD242DE1053D7&compId=IGCM10F60GA.pdf?ci_sign=9207b0278c6301d0b90264565cf2b7801ddfeb31
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Output current: -10...10A
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Case: PG-MDIP24
Kind of package: tube
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 26.1W
Voltage class: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.03 EUR
8+9.02 EUR
9+8.54 EUR
14+8.49 EUR
Mindestbestellmenge: 6
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F4150R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA585AEB73C81A0C4&compId=F4150R12KS4BOSA1.pdf?ci_sign=bcef10772012161925ebe1847340da5b430f4f81
F4150R12KS4BOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Pulsed collector current: 300A
Power dissipation: 960W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 76A
Pulsed drain current: 400A
Power dissipation: 120W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Active logical level: low
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V
Integrated circuit features: thermal protection
Application: automotive industry
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+6.64 EUR
Mindestbestellmenge: 800
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IRF1010ZSTRLPBF irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.68 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD040N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.44 EUR
Mindestbestellmenge: 2000
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 40A; 37W; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Gate-source voltage: 20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
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BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 120mA; 1.8W; SOT223; SMT
Type of transistor: N-MOSFET
Case: SOT223
Technology: SIPMOS™
Mounting: SMD
Electrical mounting: SMT
Drain-source voltage: 600V
Drain current: 0.12A
Gate charge: 4.4nC
On-state resistance: 25Ω
Power dissipation: 1.8W
Gate-source voltage: 20V
Application: automotive industry
Polarisation: N
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
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ESD130B1W0201E6327XTSA1 Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.037 EUR
Mindestbestellmenge: 15000
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ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26W; 6V; 3.5A; bidirectional; 0201,0603; Ch: 1; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Type of diode: TVS
Leakage current: 0.1µA
Number of channels: 1
Max. forward impulse current: 3.5A
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Peak pulse power dissipation: 26W
Case: 0201; 0603
Semiconductor structure: bidirectional
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.046 EUR
Mindestbestellmenge: 15000
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CY8C5287AXI-LP095 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+13.71 EUR
Mindestbestellmenge: 90
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PV; THT; DIP6; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Manufacturer series: PV
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.82 EUR
Mindestbestellmenge: 50
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PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; SMT; DIP6; -40÷85°C; 4kV
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 1304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.82 EUR
Mindestbestellmenge: 50
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PVT412PBF description pvt412.pdf?fileId=5546d462533600a401535684376e296b
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.43 EUR
100+4.9 EUR
Mindestbestellmenge: 50
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Electrical mounting: SMT
Gate charge: 1nC
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: 20V
Drain-source voltage: 60V
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
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IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 55V; 30A; 100W; DPAK; automotive industry
Polarisation: N
Type of transistor: N-MOSFET
Electrical mounting: SMT
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
On-state resistance: 15.9mΩ
Gate-source voltage: 20V
Power dissipation: 100W
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1432500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
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IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 30A; 36W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: 16V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
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IRL40SC228 Infineon-IRL40SC228-DS-v01_00-EN.pdf?fileId=5546d462566bd0c701567ece08d03664
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
26+2.85 EUR
27+2.69 EUR
100+2.59 EUR
Mindestbestellmenge: 14
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IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.26A
Number of channels: 2
Input voltage: 10...15.6V
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
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BAS2103WE6433HTMA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 50ns; SOD323; Ufmax: 1.25V; 100nA
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Max. load current: 0.25A
Max. forward voltage: 1.25V
Max. off-state voltage: 200V
Application: automotive industry
Mounting: SMD
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.057 EUR
Mindestbestellmenge: 10000
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 50A; 56W; DPAK; automotive industry; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.43 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.58 EUR
Mindestbestellmenge: 200
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PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 IRSD-S-A0001048699-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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BTS118D pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff
BTS118D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A; 14.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Supply voltage: 14.5...18.5V
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+13.17 EUR
42+11.85 EUR
Mindestbestellmenge: 14
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BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Application: automotive industry
Gate charge: 1nC
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.048 EUR
Mindestbestellmenge: 10000
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FP50R12KT3BOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA90E7E5DA4B53C0C4&compId=FP50R12KT3BOSA1.pdf?ci_sign=e5bfa2ac21af8ba4412256f70bb668388033ff0a
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Pulsed collector current: 100A
Application: Inverter
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-ECONO3-3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Produkt ist nicht verfügbar
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F475R12KS4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B427F7AA228469&compId=F4-75R12KS4.pdf?ci_sign=8a7c38558ac90818b8a03233c57e0f409e79df4d
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 2
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO2-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
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FS150R12KT4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8C87F547E493D7&compId=FS150R12KT4.pdf?ci_sign=b9e2fda300a75c51352ce08e24e35235e6476809
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Power dissipation: 750W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Produkt ist nicht verfügbar
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