Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (150739) > Seite 2513 nach 2513

Wählen Sie Seite:   [  << Vorherige Seite ]  1 251 502 753 1004 1255 1506 1757 2008 2259 2508 2509 2510 2511 2512 2513
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB09C2A6E7411C&compId=IPP030N10N3G-DTE.pdf?ci_sign=63c7641476ffce0c4aa2c4b5d4a1581de0c6277a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.19 EUR
18+4.16 EUR
19+3.93 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW60BE6327 BCW60BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
Lieferzeit 14-21 Tag (e)
1311+0.054 EUR
Mindestbestellmenge: 1311
Im Einkaufswagen  Stück im Wert von  UAH
IPA028N04NM3SXKSA1 IPA028N04NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA028N08N3GXKSA1 IPA028N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DBBEC73D34143&compId=IPA028N08N3G.pdf?ci_sign=0e611bcbce53c07838c65e230b9d700045a9ae45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Drain-source voltage: 80V
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: tube
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
auf Bestellung 268000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
CY62162G18-55BGXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB055809EC11C&compId=BSB280N15NZ3G-DTE.pdf?ci_sign=9edfd8e4d09931dafcfcdb3961b4bb1c7e9b77ff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68FE6327 BCW68FE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
385+0.19 EUR
581+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GE6327HTSA1 INFINEON TECHNOLOGIES bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.062 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4745AZI-S413 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
250+6.41 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.79 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
ITS4140N ITS4140N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.73 EUR
41+1.77 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.17A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
Supply voltage: 11.5...20V DC
Turn-on time: 655ns
Turn-off time: 580ns
Output current: -0.35...0.2A
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2336DMTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: MLPQ34
Power: 2W
Supply voltage: 10...20V DC
Turn-on time: 655ns
Turn-off time: 580ns
Output current: -0.35...0.2A
Number of channels: 6
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2336DSTRPBF INFINEON TECHNOLOGIES Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.97 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBF IRF9952TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB09C2A6E7411C&compId=IPP030N10N3G-DTE.pdf?ci_sign=63c7641476ffce0c4aa2c4b5d4a1581de0c6277a
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.19 EUR
18+4.16 EUR
19+3.93 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IPI030N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAEAD4954FC11C&compId=IPI030N10N3G-DTE.pdf?ci_sign=5d8688e08bb3c486249e6a18fad4ec33e798e3b4
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW60BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49
BCW60BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1311+0.054 EUR
Mindestbestellmenge: 1311
Im Einkaufswagen  Stück im Wert von  UAH
IPA028N04NM3SXKSA1 Infineon-IPA028N04NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cc70b8d6dd6
IPA028N04NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 63A; Idm: 356A; 38W; TO220FP
Drain-source voltage: 40V
Drain current: 63A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 356A
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA028N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DBBEC73D34143&compId=IPA028N08N3G.pdf?ci_sign=0e611bcbce53c07838c65e230b9d700045a9ae45
IPA028N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Drain-source voltage: 80V
Drain current: 62A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: tube
Gate charge: 155nC
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341TRPBFXTMA1 irf7341pbf.pdf?fileId=5546d462533600a4015355f64f031b63
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
auf Bestellung 268000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
CY62162G18-55BGXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 55ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 55ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSB280N15NZ3GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBB055809EC11C&compId=BSB280N15NZ3G-DTE.pdf?ci_sign=9edfd8e4d09931dafcfcdb3961b4bb1c7e9b77ff
BSB280N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCW68FE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBAF9D236352469&compId=BCW68FE6327.pdf?ci_sign=26327f24428971b88b9fb92a44fa0833d65a9381
BCW68FE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
385+0.19 EUR
581+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BCW68GE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4745AZI-S413 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+6.41 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.79 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
ITS4140N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB94E69C404469&compId=ITS4140N.pdf?ci_sign=acda9a4625f19354e009b9e1b34db3fb185be71e
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.73 EUR
41+1.77 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD636A07D1395EA&compId=BSS84P.pdf?ci_sign=4872a4e661c9d1e5d5d410492037d03658d4e911
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.17A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS23364DJPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: PLCC44
Power: 2W
Supply voltage: 11.5...20V DC
Turn-on time: 655ns
Turn-off time: 580ns
Output current: -0.35...0.2A
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2336DMTRPBF pVersion=0046&contRep=ZT&docId=E1C04EAD8E7EB7F1A6F5005056AB5A8F&compId=irs2336.pdf?ci_sign=a7c68c8725da23729927481591bcfa4a9c870086
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Case: MLPQ34
Power: 2W
Supply voltage: 10...20V DC
Turn-on time: 655ns
Turn-off time: 580ns
Output current: -0.35...0.2A
Number of channels: 6
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2336DSTRPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.97 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRF9952TRPBF pVersion=0046&contRep=ZT&docId=E221B1D8E6A7C1F1A303005056AB0C4F&compId=irf9952pbf.pdf?ci_sign=7b8000ddc0fc92d5659fca7da6e6c1d909d075b5
IRF9952TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
Drain-source voltage: 30/-30V
Drain current: 3.5/-2.3A
On-state resistance: 0.1/0.25Ω
Type of transistor: N/P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 251 502 753 1004 1255 1506 1757 2008 2259 2508 2509 2510 2511 2512 2513