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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
auf Bestellung 58 Stücke:
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18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
Mindestbestellmenge: 18
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BSS131H6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD637F5D40575EA&compId=BSS131.pdf?ci_sign=3fa845932928938a385fc3c5d60733bac622727b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDD5BE257718BF&compId=IAUS165N08S5N029.pdf?ci_sign=394e5f40f7fae10bc3b56c2d70e20a1e0fc48e70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA57E319ED78BF&compId=IAUT165N08S5N029.pdf?ci_sign=1f09f84ff53a379526d421e7b22fd84aaec4af51 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 280 Stücke:
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14+12.58 EUR
42+11.33 EUR
Mindestbestellmenge: 14
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BCR10PNH6327 BCR10PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869757B66B1A6469&compId=BCR10PNH6327.pdf?ci_sign=b2c2746e16a6aca8015036aa14272b1c552f7db2 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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IPA052N08NM5SXKSA1 IPA052N08NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 80V
Drain current: 46A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 256A
Mounting: THT
Produkt ist nicht verfügbar
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA7DB6BC51B820&compId=AIKQ120N60CT.pdf?ci_sign=b3d260d053566763d4d058bcc2c0c4e1c33ab1e5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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IRFS4227TRLPBF IRFS4227TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C8327D1226F1A303005056AB0C4F&compId=irfs4227pbf.pdf?ci_sign=ba7e3a94bc4be1c6dca7d3cb57bd4f88452d247b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS4410TRLPBF IRFS4410TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C8C46B5B22F1A303005056AB0C4F&compId=irfs4410pbf.pdf?ci_sign=ccc955e36a01f6495227bf94e93c384689de9ff9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR9120NTRLPBF IRFR9120NTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP120N04S302AKSA1 IPP120N04S302AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA888DB63FA143&compId=IPP120N04S302.pdf?ci_sign=121255400b0b3da3e0c94e4be5980b7bba7b7b21 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 160nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
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IAUC120N04S6L005ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™ 6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 177nC
On-state resistance: 0.8mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 187W
Pulsed drain current: 1550A
Produkt ist nicht verfügbar
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Power dissipation: 125W
Gate charge: 200nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 56A; 96W; PG-TDSON-8; SMT
Mounting: SMD
Gate charge: 19nC
On-state resistance: 16mΩ
Drain current: 56A
Gate-source voltage: 20V
Power dissipation: 96W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: N
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Electrical mounting: SMT
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.43 EUR
Mindestbestellmenge: 5000
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IPT004N03LATMA1 IPT004N03LATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160C6XKSA1 IPA60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BE848BB6B1BF&compId=IPA60R160C6-DTE.pdf?ci_sign=cd4ab842ed2aa4816396ca230e9b369a01d43a25 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP92PH6327XTSA1 BSP92PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921DA8D59F31CC&compId=BSP92PH6327XTSA1-dte.pdf?ci_sign=c52b4a4e1e6278ec456dce8cdc96bdd2dbc992e9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Drain-source voltage: -250V
Drain current: -0.26A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
auf Bestellung 2907 Stücke:
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87+0.83 EUR
129+0.55 EUR
168+0.43 EUR
275+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 87
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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7+11.33 EUR
10+7.42 EUR
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.51 EUR
7+11.84 EUR
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IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCA67145851BF&compId=IPW65R420CFD-DTE.pdf?ci_sign=0d183952d44e9096ba03d9cc41c07ddb26aec1c1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
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2+35.75 EUR
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 39 Stücke:
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8+9.44 EUR
10+7.25 EUR
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IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R045C7FKSA1 IPW65R045C7FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAFD47D4B11BF&compId=IPW65R045C7-DTE.pdf?ci_sign=8d648a3816212f060a23a19c0413946ef1df3829 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-3
Produkt ist nicht verfügbar
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IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.79 EUR
14+5.21 EUR
15+5.02 EUR
16+4.75 EUR
50+4.56 EUR
Mindestbestellmenge: 13
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IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Power dissipation: 192W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 21A
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
18+4.16 EUR
19+3.96 EUR
20+3.68 EUR
25+3.59 EUR
Mindestbestellmenge: 17
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IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R041CFDFKSA1 IPW65R041CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R041CFDFKSA2 INFINEON TECHNOLOGIES Infineon-IPW65R041CFD-DS-v02_00-en.pdf?fileId=db3a3043337a914d01338408155d60f9 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
30+12.05 EUR
Mindestbestellmenge: 30
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IPW60R099CPAFKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
30+7.62 EUR
Mindestbestellmenge: 30
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IPW60R125CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
30+3.63 EUR
150+3.26 EUR
Mindestbestellmenge: 30
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CYUSB3302-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
260+5.19 EUR
Mindestbestellmenge: 260
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CYUSB3314-88LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
168+7.55 EUR
Mindestbestellmenge: 168
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BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4A23BA301E28&compId=BGT24MTR12.pdf?ci_sign=f624d640ac2e865a0dc9b9642ef785ba696a0b44 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Interface: SPI
Kind of package: reel; tape
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Number of receivers: 2
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
DC supply current: 210mA
Supply voltage: 3.135...3.465V DC
Frequency: 24...24.25GHz
Open-loop gain: 26dB
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.72 EUR
Mindestbestellmenge: 7
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IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD30G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d57e7f5492 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
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IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
30+5.99 EUR
90+5.39 EUR
Mindestbestellmenge: 30
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2EDF7275FXUMA1 2EDF7275FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -8...4A
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
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2EDF7175FXUMA1 2EDF7175FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Produkt ist nicht verfügbar
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2EDF7275FXUMA2 INFINEON TECHNOLOGIES Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.99 EUR
Mindestbestellmenge: 2500
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
52+1.39 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 32
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IR2011SPBF IR2011SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Voltage class: 200V
Turn-off time: 60ns
Turn-on time: 80ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
18+4.02 EUR
24+3.07 EUR
25+2.9 EUR
Mindestbestellmenge: 17
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IRFS7440TRLPBF IRFS7440TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC92C2BCF2411C&compId=IPP220N25NFD-DTE.pdf?ci_sign=8473d47f003cb3d74123ea2cfe5e1878cb318853 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD320N20N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.12 EUR
Mindestbestellmenge: 2500
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BSC037N08NS5ATMA1 BSC037N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E0B3F440811C&compId=BSC037N08NS5-DTE.pdf?ci_sign=068004eaadd07b73cbe8cb48d01465db41fd351d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ160N10NS3GATMA1 BSZ160N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N10S5L110ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 15.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 88W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24.1nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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IRF100B201 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE90CFB8F0CDC860D5&compId=IRF100x201.pdf?ci_sign=06ba51b9318616c3f07bc1af27d7d1e387b87aee
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Kind of package: tube
Case: TO220AB
Drain-source voltage: 100V
Drain current: 136A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 441W
Polarisation: unipolar
Gate charge: 255nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 690A
Mounting: THT
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.18 EUR
32+2.29 EUR
34+2.16 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BSS131H6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD637F5D40575EA&compId=BSS131.pdf?ci_sign=3fa845932928938a385fc3c5d60733bac622727b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUS165N08S5N029ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDD5BE257718BF&compId=IAUS165N08S5N029.pdf?ci_sign=394e5f40f7fae10bc3b56c2d70e20a1e0fc48e70
IAUS165N08S5N029ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA57E319ED78BF&compId=IAUT165N08S5N029.pdf?ci_sign=1f09f84ff53a379526d421e7b22fd84aaec4af51
IAUT165N08S5N029ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+12.58 EUR
42+11.33 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BCR10PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869757B66B1A6469&compId=BCR10PNH6327.pdf?ci_sign=b2c2746e16a6aca8015036aa14272b1c552f7db2
BCR10PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 130MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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IPA052N08NM5SXKSA1 Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a
IPA052N08NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 46A; Idm: 256A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 80V
Drain current: 46A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 256A
Mounting: THT
Produkt ist nicht verfügbar
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AIKQ120N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA7DB6BC51B820&compId=AIKQ120N60CT.pdf?ci_sign=b3d260d053566763d4d058bcc2c0c4e1c33ab1e5
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 480A
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS4227TRLPBF pVersion=0046&contRep=ZT&docId=E221C8327D1226F1A303005056AB0C4F&compId=irfs4227pbf.pdf?ci_sign=ba7e3a94bc4be1c6dca7d3cb57bd4f88452d247b
IRFS4227TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS4410TRLPBF pVersion=0046&contRep=ZT&docId=E221C8C46B5B22F1A303005056AB0C4F&compId=irfs4410pbf.pdf?ci_sign=ccc955e36a01f6495227bf94e93c384689de9ff9
IRFS4410TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR9120NTRLPBF pVersion=0046&contRep=ZT&docId=E221C58A9DBDE8F1A303005056AB0C4F&compId=irfr9120npbf.pdf?ci_sign=97754911db563eff748ba770e7a42e35041cc7f2
IRFR9120NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPP120N04S302AKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA888DB63FA143&compId=IPP120N04S302.pdf?ci_sign=121255400b0b3da3e0c94e4be5980b7bba7b7b21
IPP120N04S302AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 160nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Produkt ist nicht verfügbar
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IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™ 6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 177nC
On-state resistance: 0.8mΩ
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 187W
Pulsed drain current: 1550A
Produkt ist nicht verfügbar
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IRF7759L2TRPBF pVersion=0046&contRep=ZT&docId=E221AA377C7252F1A303005056AB0C4F&compId=irf7759l2pbf.pdf?ci_sign=d4e941edcf85e33880fdc73e03ad22892cf18692
IRF7759L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Power dissipation: 125W
Gate charge: 200nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSC160N15NS5ATMA1 Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 150V; 56A; 96W; PG-TDSON-8; SMT
Mounting: SMD
Gate charge: 19nC
On-state resistance: 16mΩ
Drain current: 56A
Gate-source voltage: 20V
Power dissipation: 96W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: N
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Electrical mounting: SMT
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.43 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPT004N03LATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D60454DEB0411C&compId=IPT004N03L-DTE.pdf?ci_sign=ef66a83d0f89948fa0e0107be067086fb28ef786
IPT004N03LATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594BE848BB6B1BF&compId=IPA60R160C6-DTE.pdf?ci_sign=cd4ab842ed2aa4816396ca230e9b369a01d43a25
IPA60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP92PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921DA8D59F31CC&compId=BSP92PH6327XTSA1-dte.pdf?ci_sign=c52b4a4e1e6278ec456dce8cdc96bdd2dbc992e9
BSP92PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Drain-source voltage: -250V
Drain current: -0.26A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
129+0.55 EUR
168+0.43 EUR
275+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 87
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IRFR4620TRLPBF pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF89F811F98A4020D6&compId=IPW60R099CP.pdf?ci_sign=fa5ac79b9c1d4d8e8023ad58506c7e9aba5240a7
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
10+7.42 EUR
Mindestbestellmenge: 7
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IPW60R031CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7D78568F074A&compId=IPW60R031CFD7.pdf?ci_sign=c11ed890a1b18706da62222855c2df1e6b231937
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.51 EUR
7+11.84 EUR
Mindestbestellmenge: 6
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IPW65R420CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBCA67145851BF&compId=IPW65R420CFD-DTE.pdf?ci_sign=0d183952d44e9096ba03d9cc41c07ddb26aec1c1
IPW65R420CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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IPW60R037P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBD7BE2A1DA143&compId=IPW60R037P7.pdf?ci_sign=a0965196f457b612a877e2bb887906e08fdd6397
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.44 EUR
10+7.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595309EB6B3D1BF&compId=IPW60R190P6-DTE.pdf?ci_sign=e714726303f0dd874f335ad607e36d2dccd82619
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R045C7FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAFD47D4B11BF&compId=IPW65R045C7-DTE.pdf?ci_sign=8d648a3816212f060a23a19c0413946ef1df3829
IPW65R045C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R075CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E405349C71BF&compId=IPW60R075CP-DTE.pdf?ci_sign=5a09d9d26b7f0748255f3671620f7de31ad8b18d
IPW60R075CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Mounting: THT
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R160C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B595261245E051BF&compId=IPW60R160C6-DTE.pdf?ci_sign=6425d46596dbaab233c87914e1115ce6b5b52ea6
IPW60R160C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R037CSFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD91F1B02D00C4&compId=IPW60R037CSFDXKSA1.pdf?ci_sign=a5b2caf017057246ce187909fdc13399273536ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5954C50104B51BF&compId=IPW60R099C7-DTE.pdf?ci_sign=12bc2fec5987eb013d3c3d8715002e0884a2c524
IPW60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5944516ACCA91BF&compId=IPP60R190C6-DTE.pdf?ci_sign=656d49e416ee0ee069a2849faaa19764993ed0e3
IPP60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895
IPP60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
14+5.21 EUR
15+5.02 EUR
16+4.75 EUR
50+4.56 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R165CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a
IPP60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Power dissipation: 192W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 21A
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
18+4.16 EUR
19+3.96 EUR
20+3.68 EUR
25+3.59 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A79FD13B11BF&compId=IPP60R099C7-DTE.pdf?ci_sign=a94abcc1c797aaf690d8a6def9357586264bf546
IPP60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59467B878FD31BF&compId=IPP60R190E6-DTE.pdf?ci_sign=e6d37a5db910c45a9b2ab0cc867290efd25d278b
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f
IPP65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2
IPP65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5946051F67B31BF&compId=IPP60R160C6-DTE.pdf?ci_sign=a1565c957472824309f6f4e61bbf6fb9fb379f82
IPP60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59446BB076691BF&compId=IPP60R385CP-DTE.pdf?ci_sign=a5f75e28615451443f19cb06bfd1b89dd5501469
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R041CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBAD2A3F2ED1BF&compId=IPW65R041CFD-DTE.pdf?ci_sign=a8617e30d987107d126992e6736cae96b434da95
IPW65R041CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R041CFDFKSA2 Infineon-IPW65R041CFD-DS-v02_00-en.pdf?fileId=db3a3043337a914d01338408155d60f9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+12.05 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+7.62 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+3.63 EUR
150+3.26 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3302-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
260+5.19 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3314-88LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
168+7.55 EUR
Mindestbestellmenge: 168
Im Einkaufswagen  Stück im Wert von  UAH
BGT24MTR12E6327XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4A23BA301E28&compId=BGT24MTR12.pdf?ci_sign=f624d640ac2e865a0dc9b9642ef785ba696a0b44
BGT24MTR12E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Interface: SPI
Kind of package: reel; tape
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Number of receivers: 2
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
DC supply current: 210mA
Supply voltage: 3.135...3.465V DC
Frequency: 24...24.25GHz
Open-loop gain: 26dB
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.72 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IDWD30G120C5XKSA1 Infineon-IDWD30G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d57e7f5492
IDWD30G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
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IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+5.99 EUR
90+5.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7275FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDF7275FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Output current: -8...4A
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7175FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDF7175FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Supply voltage: 3...3.5V; 4.5...20V
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRF100B202 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
52+1.39 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 32
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IR2011SPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b
IR2011SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Power: 625mW
Voltage class: 200V
Turn-off time: 60ns
Turn-on time: 80ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
18+4.02 EUR
24+3.07 EUR
25+2.9 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7440TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF886A236055EA&compId=IRFS7440TRLPBF.pdf?ci_sign=f111aa57786a0567dac9690912c94d214b916756
IRFS7440TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
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IPT020N10N3ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBAED93866211C&compId=IPT020N10N3-DTE.pdf?ci_sign=7aae739c986093ff957dd2e9d4df66937580f02f
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP220N25NFDAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC92C2BCF2411C&compId=IPP220N25NFD-DTE.pdf?ci_sign=8473d47f003cb3d74123ea2cfe5e1878cb318853
IPP220N25NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD320N20N3GATMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.12 EUR
Mindestbestellmenge: 2500
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BSC037N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E0B3F440811C&compId=BSC037N08NS5-DTE.pdf?ci_sign=068004eaadd07b73cbe8cb48d01465db41fd351d
BSC037N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ160N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4C62B0C9011C&compId=BSZ160N10NS3G-DTE.pdf?ci_sign=2e6ee9257ae56d215ef4850cabfc0283f7a1cc95
BSZ160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N10S5L110ATMA1 Infineon-IAUC60N10S5L110-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795b9370c4677
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 15.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 88W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24.1nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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