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BCV62CE6327 BCV62CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6012 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
248+0.29 EUR
368+0.19 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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CY7C64225-28PVXC INFINEON TECHNOLOGIES CY7C64225.PDF Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
47+3.95 EUR
141+3.55 EUR
Mindestbestellmenge: 47
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BCR116E6433HTMA1 INFINEON TECHNOLOGIES bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.049 EUR
Mindestbestellmenge: 10000
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IMZA65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Case: TO247-4
Produkt ist nicht verfügbar
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IR2233SPBF IR2233SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.6W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233PBF IR2233PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29 description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.5W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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BAT1504RE6152HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
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IRF7807ZTRPBF IRF7807ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AB4E5872EEF1A303005056AB0C4F&compId=irf7807zpbf.pdf?ci_sign=c1df805b56b2417932bb256a741c2f70a29cea6c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7807VTRPBF IRF7807VTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AB2C875C09F1A303005056AB0C4F&compId=irf7807vpbf.pdf?ci_sign=78f9e59fb9aca18cea2e3a1094d175afcb9560cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP135H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; 1.8W; PG-SOT223; SMT
Type of transistor: N-MOSFET
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Electrical mounting: SMT
Drain-source voltage: 600V
Drain current: 0.12A
Gate charge: 4.9nC
On-state resistance: 30Ω
Power dissipation: 1.8W
Gate-source voltage: 20V
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.99 EUR
Mindestbestellmenge: 1000
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IR21271STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.5A
Number of channels: 1
Supply voltage: 9...20V
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.74 EUR
Mindestbestellmenge: 2500
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IR2127STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.74 EUR
Mindestbestellmenge: 2500
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IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 IPP030N10N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB0C13A75AE11C&compId=IPP030N10N5-DTE.pdf?ci_sign=1be40706d804a7fcb61d5a9915cdd86de2f44469 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Kind of channel: enhancement
Power dissipation: 250W
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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TLS850D0TAV50ATMA1 TLS850D0TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F0TAV33ATMA1 TLS850F0TAV33ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4960E4EE04259&compId=TLS850F0TAV33.pdf?ci_sign=52cec9691fbcab9bf084b17e499b61cb26c0d750 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F2TAV50ATMA1 INFINEON TECHNOLOGIES Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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BAR6304WH6327XTSA1 INFINEON TECHNOLOGIES INFNS15694-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
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IPI90R800C3XKSA1 IPI90R800C3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC57FDD6B9C4FA8&compId=IPI90R800C3XKSA1-DTE.pdf?ci_sign=c85ceeb339f596a4d154c0a214d80d7732e29408 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
84+0.86 EUR
87+0.83 EUR
Mindestbestellmenge: 81
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IRFB38N20DPBF IRFB38N20DPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6FEF1A6F5005056AB5A8F&compId=irfs38n20d.pdf?ci_sign=a752f3e218a24d3692bd94fdedaf56a8b12869c7 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
22+3.3 EUR
24+3.02 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 21
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2ED21824S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
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SPW16N50C3FKSA1 INFINEON TECHNOLOGIES SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 560V; 16A; 160W; TO247; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
60+2.02 EUR
Mindestbestellmenge: 60
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IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF10F3898E335EA&compId=IRL1404STRLPBF.pdf?ci_sign=137c8190ab8097193a9e1d5f90a854db4b816f64 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRL1404ZSTRL AUIRL1404ZSTRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0459A727E85F1A6F5005056AB5A8F&compId=auirl1404s.pdf?ci_sign=b327d0b23e37d769d8b62015833a0041e3f77431 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE9C65B11E11C&compId=BSZ018NE2LS-DTE.pdf?ci_sign=54744ff0f6629e3500246fd292657e4cc93101aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
77+0.93 EUR
80+0.9 EUR
81+0.89 EUR
100+0.86 EUR
Mindestbestellmenge: 76
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IRS2304STRPBF INFINEON TECHNOLOGIES irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500
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IDK10G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 22µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 84A
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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IDK10G65C5 INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A
Max. forward impulse current: 71A
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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BSC112N06LDATMA1 INFINEON TECHNOLOGIES Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.64 EUR
Mindestbestellmenge: 5000
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ISP752R ISP752R INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989DA0A7454469&compId=ISP752R.pdf?ci_sign=40895db3097c4c71d8cf3d4483eafe92946131df Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
auf Bestellung 2676 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
37+1.96 EUR
39+1.84 EUR
40+1.82 EUR
41+1.74 EUR
250+1.7 EUR
500+1.69 EUR
Mindestbestellmenge: 33
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
124+0.58 EUR
141+0.51 EUR
241+0.3 EUR
421+0.17 EUR
Mindestbestellmenge: 105
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BUZ73A BUZ73A INFINEON TECHNOLOGIES INFNS13891-1.pdf?t.download=true&u=5oefqw BUZ73A.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Produkt ist nicht verfügbar
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ISP13DP06NMSATMA1 INFINEON TECHNOLOGIES Infineon-ISP13DP06NMS-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016ae951b44b1ccc Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.29 EUR
Mindestbestellmenge: 3000
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AUIR3240STR AUIR3240STR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3AAF61BAF8BF&compId=AUIR3240S.pdf?ci_sign=7576fdee7207b3be02f35991f19453ba01efc0d4 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Output current: 0.3A
Case: SO8
Mounting: SMD
Number of channels: 1
Supply voltage: 4...36V DC
Voltage class: 40V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AUIR3242SXUMA1 AUIR3242SXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3D7C4CCD58BF&compId=AUIR3242S.pdf?ci_sign=d75be44e9e78f376970f436c3ecddc58d6354d5a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
Produkt ist nicht verfügbar
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BCW66KFE6327 BCW66KFE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C53096142FA469&compId=BCW66K.pdf?ci_sign=dd3529218f8fb7c2f762685f8b56d2932dc1c672 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 INFINEON TECHNOLOGIES bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.055 EUR
Mindestbestellmenge: 3000
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IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TLS715B0NAV50XTSA1 INFINEON TECHNOLOGIES Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
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IPI60R125CPXKSA1 IPI60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5942DFCD9EE71BF&compId=IPI60R125CP-DTE.pdf?ci_sign=a6ea8e60abe31ce0efe03800b0779adda6010d85 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP772T BSP772T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 3057 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.1 EUR
2000+1.06 EUR
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
152+0.47 EUR
174+0.41 EUR
210+0.34 EUR
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PVT322ASPBF INFINEON TECHNOLOGIES IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 25mA; 170mA; SMT; SMD8
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Insulation voltage: 4kV
Control current max.: 25mA
Body dimensions: 9.39x6.47x3.42mm
Leads: for PCB
auf Bestellung 1760 Stücke:
Lieferzeit 14-21 Tag (e)
50+14.01 EUR
Mindestbestellmenge: 50
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6CDF1A6F5005056AB5A8F&compId=irfs3306pbf.pdf?ci_sign=3eff737cd65f7676704d1e680efaba849ec13fe8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
33+2.19 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 31
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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
115+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 91
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
23+3.12 EUR
24+3.02 EUR
25+2.9 EUR
Mindestbestellmenge: 21
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1EDC20H12AHXUMA1 1EDC20H12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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1EDC60H12AHXUMA1 1EDC60H12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BTS50451EJAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5172C044FE259&compId=BTS5045-1EJA.pdf?ci_sign=9030c87778744422a27802869fa8150b02464e74 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Operating temperature: -40...150°C
Case: PG-DSO-8-EP
Supply voltage: 5...28V DC
On-state resistance: 45mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.6W
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
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BTS50201EKAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.52 EUR
Mindestbestellmenge: 2500
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IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF649593FC11C&compId=IPI180N10N3G-DTE.pdf?ci_sign=bdd5ad7ac5aa3556edd4940f3d6af7743d74344f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
52+1.39 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 45
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IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA9C0C681411C&compId=IPP180N10N3G-dte.pdf?ci_sign=701544aaf512046aa829ae971b208ce0aa5ac872 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.11 EUR
Mindestbestellmenge: 14
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TLE9254LCXUMA1 INFINEON TECHNOLOGIES Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-TSON-14; -40÷150°C
Operating temperature: -40...150°C
Case: PG-TSON-14
DC supply current: 48mA
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
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BCV62CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24
BCV62CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
248+0.29 EUR
368+0.19 EUR
596+0.12 EUR
633+0.11 EUR
Mindestbestellmenge: 186
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IKCM15L60GDXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEA79D16AF3D7&compId=IKCM15L60GD.pdf?ci_sign=398345fa98c1b63f7ad382e4628995eafd40f542
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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CY7C64225-28PVXC CY7C64225.PDF
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY7C64225-28PVXC
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+3.95 EUR
141+3.55 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
BCR116E6433HTMA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.049 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Drain-source voltage: 650V
Drain current: 41A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 189W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -5...23V
Pulsed drain current: 184A
Case: TO247-4
Produkt ist nicht verfügbar
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IR2233SPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.6W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
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IR2233PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC1F15FD0B15EA&compId=IR2133JPBF.pdf?ci_sign=16765b07bef0b845644718364f02f14030fe2b29
IR2233PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP28-W
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Voltage class: 1.2kV
Power: 1.5W
Turn-on time: 750ns
Turn-off time: 700ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807ZTRPBF pVersion=0046&contRep=ZT&docId=E221AB4E5872EEF1A303005056AB0C4F&compId=irf7807zpbf.pdf?ci_sign=c1df805b56b2417932bb256a741c2f70a29cea6c
IRF7807ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7807VTRPBF pVersion=0046&contRep=ZT&docId=E221AB2C875C09F1A303005056AB0C4F&compId=irf7807vpbf.pdf?ci_sign=78f9e59fb9aca18cea2e3a1094d175afcb9560cf
IRF7807VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP135H6906XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 120mA; 1.8W; PG-SOT223; SMT
Type of transistor: N-MOSFET
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Electrical mounting: SMT
Drain-source voltage: 600V
Drain current: 0.12A
Gate charge: 4.9nC
On-state resistance: 30Ω
Power dissipation: 1.8W
Gate-source voltage: 20V
Application: automotive industry
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.99 EUR
Mindestbestellmenge: 1000
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IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.5A
Number of channels: 1
Supply voltage: 9...20V
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
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IR2127STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
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IRFP4310ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB0C13A75AE11C&compId=IPP030N10N5-DTE.pdf?ci_sign=1be40706d804a7fcb61d5a9915cdd86de2f44469
IPP030N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 120A
Kind of channel: enhancement
Power dissipation: 250W
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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TLS850D0TAV50ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV50ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 70mV
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLS850F0TAV33ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4960E4EE04259&compId=TLS850F0TAV33.pdf?ci_sign=52cec9691fbcab9bf084b17e499b61cb26c0d750
TLS850F0TAV33ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; PG-TO263-7
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 3.3V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
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TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PG-TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.425V
Output voltage: 5V
Output current: 0.5A
Case: PG-TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 3...40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPI90R800C3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68CC57FDD6B9C4FA8&compId=IPI90R800C3XKSA1-DTE.pdf?ci_sign=c85ceeb339f596a4d154c0a214d80d7732e29408
IPI90R800C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 104W
Technology: CoolMOS™
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
84+0.86 EUR
87+0.83 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
IRFB38N20DPBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B6FEF1A6F5005056AB5A8F&compId=irfs38n20d.pdf?ci_sign=a752f3e218a24d3692bd94fdedaf56a8b12869c7
IRFB38N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
22+3.3 EUR
24+3.02 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 21
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2ED21824S06JXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Supply voltage: 10...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-14
Produkt ist nicht verfügbar
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SPW16N50C3FKSA1 SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 560V; 16A; 160W; TO247; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+2.02 EUR
Mindestbestellmenge: 60
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IRL1404STRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF10F3898E335EA&compId=IRL1404STRLPBF.pdf?ci_sign=137c8190ab8097193a9e1d5f90a854db4b816f64
IRL1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRL1404ZSTRL pVersion=0046&contRep=ZT&docId=E1C0459A727E85F1A6F5005056AB5A8F&compId=auirl1404s.pdf?ci_sign=b327d0b23e37d769d8b62015833a0041e3f77431
AUIRL1404ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 790A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 790A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ018NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DE9C65B11E11C&compId=BSZ018NE2LS-DTE.pdf?ci_sign=54744ff0f6629e3500246fd292657e4cc93101aa
BSZ018NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Case: PG-TSDSON-8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
77+0.93 EUR
80+0.9 EUR
81+0.89 EUR
100+0.86 EUR
Mindestbestellmenge: 76
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IRS2304STRPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G120C5XTMA1 Infineon-IDK10G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0e5de0f41
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 10A; 165W
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 22µA
Max. forward voltage: 2V
Load current: 10A
Max. forward impulse current: 84A
Power dissipation: 165W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 650V; 10A; 89W
Semiconductor structure: single diode
Max. off-state voltage: 650V
Case: PG-TO263-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 2µA
Max. forward voltage: 1.8V
Load current: 10A
Max. forward impulse current: 71A
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Produkt ist nicht verfügbar
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.64 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
ISP752R pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989DA0A7454469&compId=ISP752R.pdf?ci_sign=40895db3097c4c71d8cf3d4483eafe92946131df
ISP752R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.15Ω
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Kind of integrated circuit: high-side
auf Bestellung 2676 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
37+1.96 EUR
39+1.84 EUR
40+1.82 EUR
41+1.74 EUR
250+1.7 EUR
500+1.69 EUR
Mindestbestellmenge: 33
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BAT6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645
BAT6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
124+0.58 EUR
141+0.51 EUR
241+0.3 EUR
421+0.17 EUR
Mindestbestellmenge: 105
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BUZ73A INFNS13891-1.pdf?t.download=true&u=5oefqw BUZ73A.pdf
BUZ73A
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Produkt ist nicht verfügbar
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ISP13DP06NMSATMA1 Infineon-ISP13DP06NMS-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c019016ae951b44b1ccc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AUIR3240STR pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3AAF61BAF8BF&compId=AUIR3240S.pdf?ci_sign=7576fdee7207b3be02f35991f19453ba01efc0d4
AUIR3240STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Output current: 0.3A
Case: SO8
Mounting: SMD
Number of channels: 1
Supply voltage: 4...36V DC
Voltage class: 40V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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AUIR3242SXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3D7C4CCD58BF&compId=AUIR3242S.pdf?ci_sign=d75be44e9e78f376970f436c3ecddc58d6354d5a
AUIR3242SXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
Produkt ist nicht verfügbar
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BCW66KFE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C53096142FA469&compId=BCW66K.pdf?ci_sign=dd3529218f8fb7c2f762685f8b56d2932dc1c672
BCW66KFE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.055 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462
IPW60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TLS715B0NAV50XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
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IPI60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5942DFCD9EE71BF&compId=IPI60R125CP-DTE.pdf?ci_sign=a6ea8e60abe31ce0efe03800b0779adda6010d85
IPI60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP772T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
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BSP77E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 3057 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.1 EUR
2000+1.06 EUR
Mindestbestellmenge: 23
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BSP89H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
152+0.47 EUR
174+0.41 EUR
210+0.34 EUR
Mindestbestellmenge: 122
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PVT322ASPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 25mA; 170mA; SMT; SMD8
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.17A
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Insulation voltage: 4kV
Control current max.: 25mA
Body dimensions: 9.39x6.47x3.42mm
Leads: for PCB
auf Bestellung 1760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+14.01 EUR
Mindestbestellmenge: 50
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IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3306PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6CDF1A6F5005056AB5A8F&compId=irfs3306pbf.pdf?ci_sign=3eff737cd65f7676704d1e680efaba849ec13fe8
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
33+2.19 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 31
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IPP80R1K2P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
115+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 91
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IPD80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
auf Bestellung 646 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
23+3.12 EUR
24+3.02 EUR
25+2.9 EUR
Mindestbestellmenge: 21
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1EDC20H12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC20H12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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1EDC60H12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60H12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8
IPB320N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BTS50451EJAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5172C044FE259&compId=BTS5045-1EJA.pdf?ci_sign=9030c87778744422a27802869fa8150b02464e74
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Operating temperature: -40...150°C
Case: PG-DSO-8-EP
Supply voltage: 5...28V DC
On-state resistance: 45mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.6W
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
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BTS50201EKAXUMA1 Infineon-BTS5020-1EKA-DS-v02_02-EN.pdf?fileId=5546d46259d9a4bf015a84fd1c7575cc
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.52 EUR
Mindestbestellmenge: 2500
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IPI180N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF649593FC11C&compId=IPI180N10N3G-DTE.pdf?ci_sign=bdd5ad7ac5aa3556edd4940f3d6af7743d74344f
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
52+1.39 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 45
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IPP180N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA9C0C681411C&compId=IPP180N10N3G-dte.pdf?ci_sign=701544aaf512046aa829ae971b208ce0aa5ac872
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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TLE9254LCXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-TSON-14; -40÷150°C
Operating temperature: -40...150°C
Case: PG-TSON-14
DC supply current: 48mA
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
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