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XMC1100T016X0032ABXUMA1 XMC1100T016X0032ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 XMC1100T016X0064ABXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3110N BTS3110N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB927E883E4469&compId=BTS3110N.pdf?ci_sign=d007588d32954c0a1e0c330620de85b0f1dd61ef Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Case: PG-SOT223-4
On-state resistance: 0.2Ω
Mounting: SMD
Turn-on time: 45µs
Turn-off time: 60µs
Output voltage: 42V
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®; SIPMOS™
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
auf Bestellung 2174 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.96 EUR
38+1.9 EUR
59+1.22 EUR
63+1.14 EUR
500+1.12 EUR
Mindestbestellmenge: 25
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA912F8CFA5C11CC&compId=BSD223PH6327XTSA1-DTE.pdf?ci_sign=7da60d03f8b4e52d7093e7914fc63ed040d189c3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
404+0.18 EUR
477+0.15 EUR
511+0.14 EUR
667+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 179
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BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913A60E70031CC&compId=BSL307SPH6327XTSA1-DTE.pdf?ci_sign=2d3b12b41a36cdb437bb34b01f41939f35a02b37 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
auf Bestellung 1767 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
136+0.53 EUR
178+0.4 EUR
327+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 93
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
158+0.45 EUR
169+0.42 EUR
180+0.4 EUR
186+0.38 EUR
Mindestbestellmenge: 95
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BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D01CD314510B&compId=BSD214SNH6327XTSA1.pdf?ci_sign=e140dc0bc8f7dd5d6a5e9b2c21760d382e9e0564 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Kind of channel: enhancement
Case: SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PVDZ172NSPBF INFINEON TECHNOLOGIES pvdz172.pdf?fileId=5546d462533600a401535683ba592934 description Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
50+9.14 EUR
Mindestbestellmenge: 50
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PVA2352NPBF INFINEON TECHNOLOGIES IRSDS10619-1.pdf?t.download=true&u=5oefqw description Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 4812 Stücke:
Lieferzeit 14-21 Tag (e)
50+6.96 EUR
Mindestbestellmenge: 50
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
87+0.83 EUR
Mindestbestellmenge: 39
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC97987B2DB3D1&compId=IPAN70R360P7S.pdf?ci_sign=446f33d5ce1d514e84e92d4725288808af0d1e4f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
40+1.83 EUR
48+1.52 EUR
70+1.03 EUR
74+0.97 EUR
100+0.93 EUR
Mindestbestellmenge: 36
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA4AC57BCA0143&compId=IPN70R360P7S.pdf?ci_sign=5821d17ce2d7c8fad36de387f6604f90da9e4af3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB41888EDB0143&compId=IPS70R360P7S.pdf?ci_sign=7e11cc65c221ebcf878ecdb01d4217297052c125 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 264A
Mounting: THT
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4A106E0F411C&compId=BSZ150N10LS3G-DTE.pdf?ci_sign=2fde45fc4d6ab9a87f8206295ac3e685a3111857 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5433F95CF8BF&compId=IAUT150N10S5N035.pdf?ci_sign=6a528e190c175351cabbebf2a2a8afeaca2b9413 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.62 EUR
Mindestbestellmenge: 1000
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IPP050N10NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.56 EUR
Mindestbestellmenge: 50
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SAK-TC1797-384F150E INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44B48D9EF6469&compId=SAK-TC1797-384F150E.pdf?ci_sign=23a456cb26f03936757134008688725281715175 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Mounting: SMD
Type of integrated circuit: microcontroller
Interface: I2C; SPI; UART
Memory: 3MB FLASH
Case: BGA416
Supply voltage: 3.5...5V DC
Produkt ist nicht verfügbar
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S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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BSP171PL6327 BSP171PL6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0474584F02CF1A6F5005056AB5A8F&compId=BSP171PL6327-Infineon.pdf?ci_sign=6587f20be49b313554fe5477ac1761805f46a096 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC857BWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.046 EUR
Mindestbestellmenge: 3000
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IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB146D4A8B411C&compId=IPP037N08N3G-DTE.pdf?ci_sign=64c6c32f058f82ac6d07d999c4f316e79c242e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
27+2.69 EUR
52+1.4 EUR
55+1.32 EUR
Mindestbestellmenge: 22
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99F8F72510A631820&compId=BFR360F.pdf?ci_sign=955a698304c55f02743f69b465e23cb5e9380402 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Case: TSFP-3
Frequency: 14GHz
Collector-emitter voltage: 6V
Current gain: 90...160
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
275+0.26 EUR
397+0.18 EUR
463+0.15 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 167
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BGT24MTR11E6327XUMA1 BGT24MTR11E6327XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4556AB1BDE28&compId=BGT24MTR11.pdf?ci_sign=2900f01eb0e229bf469f90085a5e772ee396b392 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
Produkt ist nicht verfügbar
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACD8DA556CD271BF&compId=BSS215PH6327-DTE.pdf?ci_sign=ee721eee10c54738076db65e8af27589a70a24dd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: PG-SOT23
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
242+0.3 EUR
348+0.21 EUR
432+0.17 EUR
511+0.14 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 173
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
auf Bestellung 5227 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
264+0.27 EUR
429+0.17 EUR
484+0.15 EUR
832+0.086 EUR
881+0.081 EUR
Mindestbestellmenge: 173
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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Frequency: 22GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SIEGET™
Mounting: SMD
Case: SOT343
Collector current: 70mA
Power dissipation: 0.23W
Collector-emitter voltage: 4.5V
Current gain: 90...160
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
253+0.28 EUR
285+0.25 EUR
329+0.22 EUR
363+0.2 EUR
394+0.18 EUR
443+0.16 EUR
468+0.15 EUR
Mindestbestellmenge: 200
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BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A64F3AE83B110B&compId=BSL606SNH6327XTSA1.pdf?ci_sign=ff3e05d9020426993f44e3de18cad12bcdd9a49e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSOP-6
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
115+0.63 EUR
132+0.54 EUR
178+0.4 EUR
247+0.29 EUR
261+0.27 EUR
3000+0.26 EUR
Mindestbestellmenge: 74
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BBY6602VH6327XTSA1 INFINEON TECHNOLOGIES bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400 Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Load current: 50mA
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 12V
Case: SC79
Produkt ist nicht verfügbar
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN x2
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
544+0.13 EUR
715+0.1 EUR
804+0.089 EUR
852+0.084 EUR
937+0.076 EUR
Mindestbestellmenge: 313
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IRS21271STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDB7506BDC0DA0DC&compId=IRS212XXSTRPBf.pdf?ci_sign=e616bf26360d656e90e728b62df1e0f3df09dc73 Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
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2500+1.46 EUR
Mindestbestellmenge: 2500
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CY7C1381KV33-100BZXI INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC846SH6327XTSA1 BC846SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E8A42A64A469&compId=BC846UE6327.pdf?ci_sign=ea630812afe3a68be987098d6de4ca9d0884f66b Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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BC846SH6433XTMA1 INFINEON TECHNOLOGIES bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.074 EUR
Mindestbestellmenge: 10000
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AUIRF4104S AUIRF4104S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC70N08S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ070N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.68 EUR
Mindestbestellmenge: 5000
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BCR135SH6327 BCR135SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
589+0.12 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 385
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BCR35PNH6327 BCR35PNH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6B81F686DE469&compId=BCR35PNH6327.pdf?ci_sign=d3b4d6d323b746cd2a87e679255d63f2a25347e6 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
auf Bestellung 460 Stücke:
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185+0.39 EUR
460+0.16 EUR
Mindestbestellmenge: 185
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BCR135WH6327 BCR135WH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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BCR35PNH6433XTMA1 INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DF4896A411CC&compId=SPP15P10PLHXKSA1-DTE.pdf?ci_sign=ead7ae3ae2309c3e298e1a2cdb1971d8711f9449 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Kind of channel: enhancement
auf Bestellung 11 Stücke:
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11+6.51 EUR
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IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3020 Stücke:
Lieferzeit 14-21 Tag (e)
300+0.31 EUR
Mindestbestellmenge: 300
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IPA60R060P7 IPA60R060P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1EDC125262749&compId=IPA60R060P7.pdf?ci_sign=cb246ca29be37a4051586f7d55d95def1bcf574f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZA60R060P7XKSA1 IPZA60R060P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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BCX70HE6327 BCX70HE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
920+0.078 EUR
1021+0.07 EUR
1155+0.062 EUR
1270+0.056 EUR
1345+0.053 EUR
Mindestbestellmenge: 920
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BCX70KE6327 BCX70KE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
521+0.14 EUR
819+0.087 EUR
1405+0.051 EUR
1484+0.048 EUR
Mindestbestellmenge: 358
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BCX70JE6327HTSA1 INFINEON TECHNOLOGIES BCW60%2C%20BCX70%20Rev2007.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.044 EUR
Mindestbestellmenge: 3000
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IKW08T120FKSA1 IKW08T120FKSA1 INFINEON TECHNOLOGIES IKW08T120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42893233e29 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 53nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IPI60R190C6XKSA1 IPI60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594260EF079B1BF&compId=IPI60R190C6-DTE.pdf?ci_sign=9f13d353281a0e64deef708e1dc2f0664d7e1f5f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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16+4.7 EUR
17+4.2 EUR
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IPA60R190C6XKSA1 IPA60R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594AE76D73071BF&compId=IPA60R190C6-DTE.pdf?ci_sign=adbe15ba42c81380a51302cc5c2c3d6eae0070c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R190E6XKSA1 IPA60R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C5A09F7391BF&compId=IPA60R190E6-DTE.pdf?ci_sign=27526d852919e0caaf2f039489eca0b9d8de32e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC1100T016X0032ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016X0032ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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XMC1100T016X0064ABXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AA8EBC06EBD0E0C1&compId=XMC1300-AB-EN.pdf?ci_sign=b6d8cbd0fcbb4ac49cd07eded1aea099645e3ea9
XMC1100T016X0064ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
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IRF2907ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5
IRF2907ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS3110N pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB927E883E4469&compId=BTS3110N.pdf?ci_sign=d007588d32954c0a1e0c330620de85b0f1dd61ef
BTS3110N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Case: PG-SOT223-4
On-state resistance: 0.2Ω
Mounting: SMD
Turn-on time: 45µs
Turn-off time: 60µs
Output voltage: 42V
Output current: 1.4A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®; SIPMOS™
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
auf Bestellung 2174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
38+1.9 EUR
59+1.22 EUR
63+1.14 EUR
500+1.12 EUR
Mindestbestellmenge: 25
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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BSD223PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA912F8CFA5C11CC&compId=BSD223PH6327XTSA1-DTE.pdf?ci_sign=7da60d03f8b4e52d7093e7914fc63ed040d189c3
BSD223PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Case: PG-SOT-363
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -0.39A
Drain-source voltage: -20V
On-state resistance: 1.2Ω
Power dissipation: 0.25W
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
404+0.18 EUR
477+0.15 EUR
511+0.14 EUR
667+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 179
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BSL307SPH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA913A60E70031CC&compId=BSL307SPH6327XTSA1-DTE.pdf?ci_sign=2d3b12b41a36cdb437bb34b01f41939f35a02b37
BSL307SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -5.5A
Drain-source voltage: -30V
On-state resistance: 43mΩ
Power dissipation: 2W
auf Bestellung 1767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
136+0.53 EUR
178+0.4 EUR
327+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 93
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IRFL4105TRPBF pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
158+0.45 EUR
169+0.42 EUR
180+0.4 EUR
186+0.38 EUR
Mindestbestellmenge: 95
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BSD214SNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A5D01CD314510B&compId=BSD214SNH6327XTSA1.pdf?ci_sign=e140dc0bc8f7dd5d6a5e9b2c21760d382e9e0564
BSD214SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Kind of channel: enhancement
Case: SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PVDZ172NSPBF description pvdz172.pdf?fileId=5546d462533600a401535683ba592934
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+9.14 EUR
Mindestbestellmenge: 50
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PVA2352NPBF description IRSDS10619-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 4812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.96 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Kind of package: tube
Pulsed drain current: 34A
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
87+0.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R360P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC97987B2DB3D1&compId=IPAN70R360P7S.pdf?ci_sign=446f33d5ce1d514e84e92d4725288808af0d1e4f
IPAN70R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Kind of package: tube
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
40+1.83 EUR
48+1.52 EUR
70+1.03 EUR
74+0.97 EUR
100+0.93 EUR
Mindestbestellmenge: 36
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IPN70R360P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA4AC57BCA0143&compId=IPN70R360P7S.pdf?ci_sign=5821d17ce2d7c8fad36de387f6604f90da9e4af3
IPN70R360P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPS70R360P7SAKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB41888EDB0143&compId=IPS70R360P7S.pdf?ci_sign=7e11cc65c221ebcf878ecdb01d4217297052c125
IPS70R360P7SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 264A
Mounting: THT
Produkt ist nicht verfügbar
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BSZ150N10LS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E4A106E0F411C&compId=BSZ150N10LS3G-DTE.pdf?ci_sign=2fde45fc4d6ab9a87f8206295ac3e685a3111857
BSZ150N10LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUT150N10S5N035ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBA5433F95CF8BF&compId=IAUT150N10S5N035.pdf?ci_sign=6a528e190c175351cabbebf2a2a8afeaca2b9413
IAUT150N10S5N035ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.62 EUR
Mindestbestellmenge: 1000
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IPP050N10NF2SAKMA1 Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.56 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
SAK-TC1797-384F150E pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B44B48D9EF6469&compId=SAK-TC1797-384F150E.pdf?ci_sign=23a456cb26f03936757134008688725281715175
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Mounting: SMD
Type of integrated circuit: microcontroller
Interface: I2C; SPI; UART
Memory: 3MB FLASH
Case: BGA416
Supply voltage: 3.5...5V DC
Produkt ist nicht verfügbar
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S25HS02GTDPBHB053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
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S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP171PL6327 pVersion=0046&contRep=ZT&docId=E1C0474584F02CF1A6F5005056AB5A8F&compId=BSP171PL6327-Infineon.pdf?ci_sign=6587f20be49b313554fe5477ac1761805f46a096
BSP171PL6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC857BWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.046 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPP037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB146D4A8B411C&compId=IPP037N08N3G-DTE.pdf?ci_sign=64c6c32f058f82ac6d07d999c4f316e79c242e05
IPP037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
27+2.69 EUR
52+1.4 EUR
55+1.32 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
BFR360FH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99F8F72510A631820&compId=BFR360F.pdf?ci_sign=955a698304c55f02743f69b465e23cb5e9380402
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Case: TSFP-3
Frequency: 14GHz
Collector-emitter voltage: 6V
Current gain: 90...160
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
275+0.26 EUR
397+0.18 EUR
463+0.15 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 167
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BGT24MTR11E6327XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4556AB1BDE28&compId=BGT24MTR11.pdf?ci_sign=2900f01eb0e229bf469f90085a5e772ee396b392
BGT24MTR11E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
Produkt ist nicht verfügbar
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BSS215PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACD8DA556CD271BF&compId=BSS215PH6327-DTE.pdf?ci_sign=ee721eee10c54738076db65e8af27589a70a24dd
BSS215PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: PG-SOT23
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
auf Bestellung 1628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
242+0.3 EUR
348+0.21 EUR
432+0.17 EUR
511+0.14 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 173
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BSS214NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
auf Bestellung 5227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
264+0.27 EUR
429+0.17 EUR
484+0.15 EUR
832+0.086 EUR
881+0.081 EUR
Mindestbestellmenge: 173
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BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Frequency: 22GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Technology: SIEGET™
Mounting: SMD
Case: SOT343
Collector current: 70mA
Power dissipation: 0.23W
Collector-emitter voltage: 4.5V
Current gain: 90...160
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
285+0.25 EUR
329+0.22 EUR
363+0.2 EUR
394+0.18 EUR
443+0.16 EUR
468+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BSL606SNH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A64F3AE83B110B&compId=BSL606SNH6327XTSA1.pdf?ci_sign=ff3e05d9020426993f44e3de18cad12bcdd9a49e
BSL606SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; 2W; PG-TSOP-6
Drain-source voltage: 60V
Drain current: 4.5A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSOP-6
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
115+0.63 EUR
132+0.54 EUR
178+0.4 EUR
247+0.29 EUR
261+0.27 EUR
3000+0.26 EUR
Mindestbestellmenge: 74
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BBY6602VH6327XTSA1 bby66series.pdf?folderId=db3a304313d846880113ddc160d402c0&fileId=db3a304313d846880113deb52d8e0400
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 12V; 50mA; SC79; single diode; reel,tape
Load current: 50mA
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 12V
Case: SC79
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBF pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449
BC847SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Frequency: 250MHz
Collector-emitter voltage: 45V
Collector current: 0.1A
Type of transistor: NPN x2
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
544+0.13 EUR
715+0.1 EUR
804+0.089 EUR
852+0.084 EUR
937+0.076 EUR
Mindestbestellmenge: 313
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IRS21271STRPBF pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDB7506BDC0DA0DC&compId=IRS212XXSTRPBf.pdf?ci_sign=e616bf26360d656e90e728b62df1e0f3df09dc73
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.46 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1381KV33-100BZXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E8A42A64A469&compId=BC846UE6327.pdf?ci_sign=ea630812afe3a68be987098d6de4ca9d0884f66b
BC846SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC846SH6433XTMA1 bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2
Type of transistor: NPN x2
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.074 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104S pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156
AUIRF4104S
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 280A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BCR135SH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
589+0.12 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BCR35PNH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6B81F686DE469&compId=BCR35PNH6327.pdf?ci_sign=d3b4d6d323b746cd2a87e679255d63f2a25347e6
BCR35PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
185+0.39 EUR
460+0.16 EUR
Mindestbestellmenge: 185
Im Einkaufswagen  Stück im Wert von  UAH
BCR135WH6327 pVersion=0046&contRep=ZT&docId=E23AC7DD19DD45F1A303005056AB0C4F&compId=bcr135.pdf?ci_sign=f190940651e503aa918cf5d2d095221b489a28f9
BCR135WH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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BCR35PNH6433XTMA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SPP15P10PLHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DF4896A411CC&compId=SPP15P10PLHXKSA1-DTE.pdf?ci_sign=ead7ae3ae2309c3e298e1a2cdb1971d8711f9449
SPP15P10PLHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
300+0.31 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R060P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1EDC125262749&compId=IPA60R060P7.pdf?ci_sign=cb246ca29be37a4051586f7d55d95def1bcf574f
IPA60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R060P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFEC74B032C33D1&compId=IPZA60R060P7.pdf?ci_sign=310e8ddc118afb51589bfc4506d4483444c7a207
IPZA60R060P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX70HE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0
BCX70HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
920+0.078 EUR
1021+0.07 EUR
1155+0.062 EUR
1270+0.056 EUR
1345+0.053 EUR
Mindestbestellmenge: 920
Im Einkaufswagen  Stück im Wert von  UAH
BCX70KE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0
BCX70KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1799 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
521+0.14 EUR
819+0.087 EUR
1405+0.051 EUR
1484+0.048 EUR
Mindestbestellmenge: 358
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BCX70JE6327HTSA1 BCW60%2C%20BCX70%20Rev2007.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.044 EUR
Mindestbestellmenge: 3000
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IKW08T120FKSA1 IKW08T120_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42893233e29
IKW08T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
Collector current: 8A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 53nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 63ns
Turn-off time: 520ns
Type of transistor: IGBT
Power dissipation: 70W
Kind of package: tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594260EF079B1BF&compId=IPI60R190C6-DTE.pdf?ci_sign=9f13d353281a0e64deef708e1dc2f0664d7e1f5f
IPI60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.7 EUR
17+4.2 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594AE76D73071BF&compId=IPA60R190C6-DTE.pdf?ci_sign=adbe15ba42c81380a51302cc5c2c3d6eae0070c3
IPA60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594C5A09F7391BF&compId=IPA60R190E6-DTE.pdf?ci_sign=27526d852919e0caaf2f039489eca0b9d8de32e3
IPA60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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