Produkte > IQE

Module DC-DC 24VIN 1-OUT 5V 24A 120W 8-Pin Quarter-Brick

Produkt ist nicht verfügbar

IQE-480-17A-120V/001-R

Module DC-DC 48VIN 1-OUT 12V 17A 204W 8-Pin Quarter-Brick

Produkt ist nicht verfügbar

IQE004NE1LM7ATMA1

Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.16 EUR
10+	5.12 EUR
100+	4.07 EUR
500+	3.45 EUR
1000+	2.92 EUR
2000+	2.78 EUR

Mindestbestellmenge: 5

IQE004NE1LM7ATMA1

MOSFET TRENCH <= 40V

auf Bestellung 4908 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.06 EUR
11+	5.02 EUR
100+	3.98 EUR
250+	3.67 EUR
500+	3.33 EUR
1000+	2.86 EUR
2500+	2.7 EUR

Mindestbestellmenge: 9

IQE004NE1LM7ATMA1

Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.67 EUR

Mindestbestellmenge: 5000

IQE004NE1LM7ATMA1

TRENCH <= 40V

Produkt ist nicht verfügbar

IQE004NE1LM7CGATMA1

TRENCH <= 40V

Produkt ist nicht verfügbar

IQE004NE1LM7CGATMA1

Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

auf Bestellung 9980 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.01 EUR
10+	4.99 EUR
100+	3.97 EUR
500+	3.36 EUR
1000+	2.85 EUR
2000+	2.71 EUR

Mindestbestellmenge: 5

IQE004NE1LM7CGATMA1

Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.61 EUR

Mindestbestellmenge: 5000

IQE004NE1LM7CGATMA1

MOSFET TRENCH <= 40V

auf Bestellung 4879 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.06 EUR
11+	5.02 EUR
100+	3.98 EUR
250+	3.67 EUR
500+	3.33 EUR
1000+	2.86 EUR
2500+	2.7 EUR

Mindestbestellmenge: 9

IQE004NE1LM7CGSCATMA1

Opti MOST M7 Power-Transistor, 15V

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

33+	4.76 EUR
36+	4.23 EUR
37+	3.99 EUR
50+	3.72 EUR
100+	3.14 EUR
250+	2.96 EUR
500+	2.44 EUR

Mindestbestellmenge: 33

IQE004NE1LM7CGSCATMA1

Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

Produkt ist nicht verfügbar

IQE004NE1LM7CGSCATMA1

MOSFET TRENCH <= 40V

auf Bestellung 4348 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.53 EUR
10+	5.41 EUR
100+	4.32 EUR
250+	3.98 EUR
500+	3.61 EUR
1000+	3.09 EUR
2500+	2.94 EUR

Mindestbestellmenge: 8

IQE004NE1LM7CGSCATMA1

Opti MOST M7 Power-Transistor, 15V

auf Bestellung 500 Stücke:

Lieferzeit 14-21 Tag (e)

33+	4.76 EUR
36+	4.23 EUR
37+	3.99 EUR
50+	3.72 EUR
100+	3.14 EUR
250+	2.96 EUR
500+	2.44 EUR

Mindestbestellmenge: 33

IQE004NE1LM7CGSCATMA1

TRENCH <= 40V

Produkt ist nicht verfügbar

IQE004NE1LM7CGSCATMA1

Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

Produkt ist nicht verfügbar

IQE004NE1LM7SCATMA1

Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

Produkt ist nicht verfügbar

IQE004NE1LM7SCATMA1

MOSFET TRENCH <= 40V

auf Bestellung 4500 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.53 EUR
10+	5.41 EUR
100+	4.32 EUR
250+	3.98 EUR
500+	3.61 EUR
1000+	3.09 EUR
2500+	2.94 EUR

Mindestbestellmenge: 8

IQE004NE1LM7SCATMA1

TRENCH <= 40V

Produkt ist nicht verfügbar

IQE004NE1LM7SCATMA1

Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V

Produkt ist nicht verfügbar

IQE006NE2LM5ATMA1

Description: INFINEON - IQE006NE2LM5ATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 298 A, 0.0005 ohm, TSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 298A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 89W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0005ohm

auf Bestellung 9004 Stücke:

Lieferzeit 14-21 Tag (e)

IQE006NE2LM5ATMA1

Trans MOSFET N-CH 25V 41A T/R

Produkt ist nicht verfügbar

IQE006NE2LM5ATMA1

Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

Produkt ist nicht verfügbar

IQE006NE2LM5ATMA1

auf Bestellung 9004 Stücke:

Lieferzeit 14-21 Tag (e)

IQE006NE2LM5ATMA1

MOSFET TRENCH <= 40V

auf Bestellung 2105 Stücke:

Lieferzeit 14-28 Tag (e)

13+	4.26 EUR
14+	3.74 EUR
100+	3.28 EUR
250+	3.25 EUR
500+	2.94 EUR
1000+	2.65 EUR
5000+	2.59 EUR

Mindestbestellmenge: 13

IQE006NE2LM5ATMA1

Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

auf Bestellung 3904 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.9 EUR
10+	4.9 EUR
100+	3.9 EUR
500+	3.3 EUR
1000+	2.8 EUR
2000+	2.66 EUR

Mindestbestellmenge: 5

IQE006NE2LM5CGATMA1

Description: MOSFET N-CH 25V 41A/298A IPAK
Packaging: Cut Tape (CT)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

auf Bestellung 9875 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.85 EUR
10+	4.85 EUR
100+	3.86 EUR
500+	3.26 EUR
1000+	2.77 EUR
2000+	2.63 EUR

Mindestbestellmenge: 5

IQE006NE2LM5CGATMA1

Description: INFINEON - IQE006NE2LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 298 A, 0.0005 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 298A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 89W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0005ohm

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

IQE006NE2LM5CGATMA1

MOSFET TRENCH <= 40V

auf Bestellung 4924 Stücke:

Lieferzeit 14-28 Tag (e)

9+	5.93 EUR
12+	4.65 EUR
100+	3.93 EUR
250+	3.61 EUR
500+	3.28 EUR
1000+	2.68 EUR
2500+	2.65 EUR

Mindestbestellmenge: 9

IQE006NE2LM5CGATMA1

Description: MOSFET N-CH 25V 41A/298A IPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.53 EUR

Mindestbestellmenge: 5000

IQE006NE2LM5CGATMA1

Description: INFINEON - IQE006NE2LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 298 A, 0.0005 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 298A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 89W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 89W
Bauform - Transistor: TTFN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 500µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0005ohm

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

IQE006NE2LM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

auf Bestellung 4468 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.47 EUR
10+	5.39 EUR
100+	4.29 EUR
500+	3.63 EUR
1000+	3.08 EUR
2000+	2.92 EUR

Mindestbestellmenge: 5

IQE006NE2LM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

Produkt ist nicht verfügbar

IQE006NE2LM5CGSCATMA1

MOSFET TRENCH <= 40V

auf Bestellung 458 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.53 EUR
10+	5.43 EUR
100+	4.32 EUR
250+	3.98 EUR
500+	3.64 EUR
1000+	3.12 EUR
2500+	2.94 EUR

Mindestbestellmenge: 8

IQE006NE2LM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

auf Bestellung 5946 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.42 EUR
10+	5.34 EUR
100+	4.25 EUR
500+	3.59 EUR
1000+	3.05 EUR
2000+	2.9 EUR

Mindestbestellmenge: 5

IQE006NE2LM5SCATMA1

MOSFET TRENCH <= 40V

auf Bestellung 4839 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.53 EUR
10+	5.43 EUR
100+	4.32 EUR
250+	3.98 EUR
500+	3.64 EUR
1000+	3.12 EUR
2500+	2.94 EUR

Mindestbestellmenge: 8

IQE006NE2LM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V

Produkt ist nicht verfügbar

IQE008N03LM5ATMA1

Description: TRENCH <= 40V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V

Produkt ist nicht verfügbar

IQE008N03LM5ATMA1

MOSFET TRENCH <= 40V

auf Bestellung 518 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.24 EUR
10+	5.2 EUR
100+	4.13 EUR
250+	3.98 EUR
500+	3.48 EUR
1000+	2.83 EUR
5000+	2.73 EUR

Mindestbestellmenge: 9

IQE008N03LM5ATMA1

N Channel Power Mosfet

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

IQE008N03LM5ATMA1

Description: TRENCH <= 40V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V

auf Bestellung 1931 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.19 EUR
10+	5.14 EUR
100+	4.09 EUR
500+	3.46 EUR
1000+	2.94 EUR

Mindestbestellmenge: 5

IQE008N03LM5CGATMA1

N Channel Power Mosfet

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

IQE008N03LM5CGATMA1

Description: TRENCH <= 40V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V

Produkt ist nicht verfügbar

IQE008N03LM5CGATMA1

Description: INFINEON - IQE008N03LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 253 A, 650 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 253A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 89W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 89W
Bauform - Transistor: TTFN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 650µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 650µohm

auf Bestellung 4748 Stücke:

Lieferzeit 14-21 Tag (e)

IQE008N03LM5CGATMA1

MOSFET TRENCH <= 40V

auf Bestellung 5536 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.24 EUR
10+	5.2 EUR
100+	4.13 EUR
250+	3.82 EUR
500+	3.46 EUR
1000+	3.02 EUR
5000+	2.73 EUR

Mindestbestellmenge: 9

IQE008N03LM5CGATMA1

Description: TRENCH <= 40V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V

auf Bestellung 162 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.19 EUR
10+	5.14 EUR
100+	4.09 EUR

Mindestbestellmenge: 5

IQE008N03LM5CGATMA1

Description: INFINEON - IQE008N03LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 253 A, 650 µohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 253A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 89W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 650µohm

auf Bestellung 4748 Stücke:

Lieferzeit 14-21 Tag (e)

IQE008N03LM5CGSCATMA1

Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHTFN-9

Produkt ist nicht verfügbar

IQE008N03LM5CGSCATMA1

MOSFET

Produkt ist nicht verfügbar

IQE008N03LM5CGSCATMA1

Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHTFN-9

Produkt ist nicht verfügbar

IQE008N03LM5SCATMA1

Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHSON-8

Produkt ist nicht verfügbar

IQE008N03LM5SCATMA1

Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PG-WHSON-8

Produkt ist nicht verfügbar

IQE008N03LM5SCATMA1

MOSFET

Produkt ist nicht verfügbar

IQE013N04LM6ATMA1

Description: INFINEON - IQE013N04LM6ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0011 ohm, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 205A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 107W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TSON
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0011ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm

auf Bestellung 9812 Stücke:

Lieferzeit 14-21 Tag (e)

IQE013N04LM6ATMA1

Description: MOSFET N-CH 40V 31A/205A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V

auf Bestellung 12359 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.5 EUR
10+	5.4 EUR
100+	4.3 EUR
500+	3.64 EUR
1000+	3.09 EUR
2000+	2.93 EUR

Mindestbestellmenge: 4

IQE013N04LM6ATMA1

MOSFET TRENCH <= 40V

auf Bestellung 2878 Stücke:

Lieferzeit 14-28 Tag (e)

10+	5.51 EUR
12+	4.65 EUR
100+	3.98 EUR
250+	3.9 EUR
500+	3.41 EUR
1000+	2.94 EUR
2500+	2.91 EUR

Mindestbestellmenge: 10

IQE013N04LM6ATMA1

Description: INFINEON - IQE013N04LM6ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0011 ohm, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 205A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm

auf Bestellung 9812 Stücke:

Lieferzeit 14-21 Tag (e)

IQE013N04LM6ATMA1

Trans MOSFET N-CH 40V 31A T/R

Produkt ist nicht verfügbar

IQE013N04LM6ATMA1

Description: MOSFET N-CH 40V 31A/205A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.82 EUR

Mindestbestellmenge: 5000

IQE013N04LM6CGATMA1

Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V

Produkt ist nicht verfügbar

IQE013N04LM6CGATMA1

MOSFET TRENCH <= 40V

auf Bestellung 824 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.21 EUR
10+	5.2 EUR
100+	4.21 EUR
250+	4 EUR
500+	3.56 EUR
1000+	2.96 EUR
5000+	2.86 EUR

Mindestbestellmenge: 9

IQE013N04LM6CGATMA1

Trans MOSFET N-CH 40V 31A 9-Pin TTFN EP T/R

Produkt ist nicht verfügbar

IQE013N04LM6CGATMA1

Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V

auf Bestellung 4919 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.5 EUR
10+	5.4 EUR
100+	4.3 EUR
500+	3.64 EUR
1000+	3.09 EUR
2000+	2.93 EUR

Mindestbestellmenge: 4

IQE013N04LM6CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V

Produkt ist nicht verfügbar

IQE013N04LM6CGSCATMA1

Description: INFINEON - IQE013N04LM6CGSCATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0011 ohm, TFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
Dauer-Drainstrom Id: 205A
hazardous: true
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 5868 Stücke:

Lieferzeit 14-21 Tag (e)

IQE013N04LM6CGSCATMA1

MOSFET TRENCH <= 40V

auf Bestellung 907 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.2 EUR
10+	6.01 EUR
100+	4.76 EUR
250+	4.39 EUR
500+	3.98 EUR
1000+	3.43 EUR
2500+	3.28 EUR

Mindestbestellmenge: 8

IQE013N04LM6CGSCATMA1

Description: INFINEON - IQE013N04LM6CGSCATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0011 ohm, TFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 205A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 5868 Stücke:

Lieferzeit 14-21 Tag (e)

IQE013N04LM6CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V

auf Bestellung 3165 Stücke:

Lieferzeit 21-28 Tag (e)

4+	7.15 EUR
10+	5.94 EUR
100+	4.73 EUR
500+	4 EUR
1000+	3.39 EUR
2000+	3.22 EUR

Mindestbestellmenge: 4

IQE013N04LM6SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V

Produkt ist nicht verfügbar

IQE013N04LM6SCATMA1

MOSFET TRENCH <= 40V

auf Bestellung 315 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.2 EUR
10+	6.01 EUR
100+	4.76 EUR
250+	4.39 EUR
500+	3.98 EUR
1000+	3.43 EUR
2500+	3.28 EUR

Mindestbestellmenge: 8

IQE013N04LM6SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V

Produkt ist nicht verfügbar

IQE013N04LM6SCATMA1

Description: INFINEON - IQE013N04LM6SCATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0011 ohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
Dauer-Drainstrom Id: 205A
hazardous: true
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 5798 Stücke:

Lieferzeit 14-21 Tag (e)

IQE013N04LM6SCATMA1

Description: INFINEON - IQE013N04LM6SCATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 0.0011 ohm, SON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 205A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: SON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 6 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0011ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 5798 Stücke:

Lieferzeit 14-21 Tag (e)

IQE022N06LM5ATMA1

Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

auf Bestellung 4970 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.98 EUR
10+	4.96 EUR
100+	3.95 EUR
500+	3.34 EUR
1000+	2.83 EUR
2000+	2.69 EUR

Mindestbestellmenge: 5

IQE022N06LM5ATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

Produkt ist nicht verfügbar

IQE022N06LM5ATMA1

MOSFET

auf Bestellung 5000 Stücke:

Lieferzeit 475-489 Tag (e)

9+	6.03 EUR
11+	5.02 EUR
100+	3.98 EUR
250+	3.67 EUR
500+	3.33 EUR
1000+	2.89 EUR
2500+	2.73 EUR

Mindestbestellmenge: 9

IQE022N06LM5ATMA1

Trans MOSFET N-CH 60V 24A 8-Pin TSON EP T/R

Produkt ist nicht verfügbar

IQE022N06LM5CGATMA1

Description: INFINEON - IQE022N06LM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 151 A, 0.0019 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 151A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0019ohm
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 4262 Stücke:

Lieferzeit 14-21 Tag (e)

IQE022N06LM5CGATMA1

Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

auf Bestellung 3575 Stücke:

Lieferzeit 21-28 Tag (e)

5+	5.98 EUR
10+	4.96 EUR
100+	3.95 EUR
500+	3.34 EUR
1000+	2.83 EUR
2000+	2.69 EUR

Mindestbestellmenge: 5

IQE022N06LM5CGATMA1

MOSFET

auf Bestellung 21 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.03 EUR
11+	5.02 EUR
100+	3.98 EUR
250+	3.67 EUR
500+	3.33 EUR
1000+	2.91 EUR
5000+	2.63 EUR

Mindestbestellmenge: 9

IQE022N06LM5CGATMA1

Trans MOSFET N-CH 60V 24A 9-Pin TTFN EP T/R

Produkt ist nicht verfügbar

IQE022N06LM5CGATMA1

auf Bestellung 4262 Stücke:

Lieferzeit 14-21 Tag (e)

IQE022N06LM5CGATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

Produkt ist nicht verfügbar

IQE022N06LM5CGSCATMA1

MOSFET

auf Bestellung 6000 Stücke:

Lieferzeit 183-197 Tag (e)

8+	6.63 EUR
10+	5.51 EUR
100+	4.37 EUR
250+	4.06 EUR
500+	3.67 EUR
1000+	3.15 EUR
2500+	2.99 EUR

Mindestbestellmenge: 8

IQE022N06LM5CGSCATMA1

Trans MOSFET N-CH 60V 24A 9-Pin WHTFN EP T/R

Produkt ist nicht verfügbar

IQE022N06LM5CGSCATMA1

Description: INFINEON - IQE022N06LM5CGSCATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 151 A, 0.0019 ohm, WHTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 151A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: WHTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0019ohm

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

IQE022N06LM5CGSCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

auf Bestellung 5926 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.58 EUR
10+	5.46 EUR
100+	4.34 EUR
500+	3.68 EUR
1000+	3.12 EUR
2000+	2.96 EUR

Mindestbestellmenge: 4

IQE022N06LM5CGSCATMA1

auf Bestellung 6000 Stücke:

Lieferzeit 14-21 Tag (e)

IQE022N06LM5CGSCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

Produkt ist nicht verfügbar

IQE022N06LM5SCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

Produkt ist nicht verfügbar

IQE022N06LM5SCATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 260 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.6 EUR
10+	5.49 EUR
100+	4.34 EUR
250+	4.03 EUR
500+	3.64 EUR
1000+	3.12 EUR
2500+	2.96 EUR

Mindestbestellmenge: 8

IQE022N06LM5SCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V

auf Bestellung 5995 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.58 EUR
10+	5.46 EUR
100+	4.34 EUR
500+	3.68 EUR
1000+	3.12 EUR
2000+	2.96 EUR

Mindestbestellmenge: 4

IQE022N06LM5SCATMA1

Trans MOSFET N-CH 60V 24A 8-Pin WHSON EP T/R

Produkt ist nicht verfügbar

IQE030N06NM5ATMA1

Description: INFINEON - IQE030N06NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 0.0022 ohm, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 137A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 107W
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TSON
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0022ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0022ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 9992 Stücke:

Lieferzeit 14-21 Tag (e)

IQE030N06NM5ATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 6843 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.86 EUR
10+	5.72 EUR
100+	4.55 EUR
250+	4.34 EUR
500+	3.85 EUR
1000+	3.12 EUR
5000+	2.99 EUR

Mindestbestellmenge: 8

IQE030N06NM5ATMA1

Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	2.96 EUR

Mindestbestellmenge: 5000

IQE030N06NM5ATMA1

SP005399424

Produkt ist nicht verfügbar

IQE030N06NM5ATMA1

auf Bestellung 9992 Stücke:

Lieferzeit 14-21 Tag (e)

IQE030N06NM5ATMA1

Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

auf Bestellung 7358 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.81 EUR
10+	5.67 EUR
100+	4.51 EUR
500+	3.82 EUR
1000+	3.24 EUR
2000+	3.08 EUR

Mindestbestellmenge: 4

IQE030N06NM5CGATMA1

Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

auf Bestellung 4960 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.81 EUR
10+	5.67 EUR
100+	4.51 EUR
500+	3.82 EUR
1000+	3.24 EUR
2000+	3.08 EUR

Mindestbestellmenge: 4

IQE030N06NM5CGATMA1

Description: INFINEON - IQE030N06NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 0.0022 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 137A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0022ohm

auf Bestellung 4670 Stücke:

Lieferzeit 14-21 Tag (e)

IQE030N06NM5CGATMA1

Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

Produkt ist nicht verfügbar

IQE030N06NM5CGATMA1

Description: INFINEON - IQE030N06NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 0.0022 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 137A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 107W
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TTFN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0022ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0022ohm

auf Bestellung 4670 Stücke:

Lieferzeit 14-21 Tag (e)

IQE030N06NM5CGATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 4906 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.86 EUR
10+	5.72 EUR
100+	4.55 EUR
250+	4.34 EUR
500+	3.85 EUR
1000+	3.12 EUR
5000+	2.99 EUR

Mindestbestellmenge: 8

IQE030N06NM5CGATMA1

SP005399428

Produkt ist nicht verfügbar

IQE030N06NM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

Produkt ist nicht verfügbar

IQE030N06NM5CGSCATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 5820 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.79 EUR
10+	5.69 EUR
25+	5.38 EUR
100+	4.63 EUR
250+	4.37 EUR
500+	4.11 EUR
1000+	3.54 EUR

Mindestbestellmenge: 8

IQE030N06NM5CGSCATMA1

Trans MOSFET N-CH 60V 21A 9-Pin WHTFN EP T/R

Produkt ist nicht verfügbar

IQE030N06NM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

Produkt ist nicht verfügbar

IQE030N06NM5SCATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 3620 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.79 EUR
10+	5.69 EUR
25+	5.38 EUR
100+	4.63 EUR
250+	4.37 EUR
500+	4.11 EUR
1000+	3.54 EUR

Mindestbestellmenge: 8

IQE030N06NM5SCATMA1

Trans MOSFET N-CH 60V 21A

Produkt ist nicht verfügbar

IQE030N06NM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

Produkt ist nicht verfügbar

IQE030N06NM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V

Produkt ist nicht verfügbar

IQE036N08NM6ATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE036N08NM6ATMA1

MOSFET

Produkt ist nicht verfügbar

IQE036N08NM6ATMA1

TRENCH 40<-<100V

Produkt ist nicht verfügbar

IQE036N08NM6CGATMA1

MOSFET

Produkt ist nicht verfügbar

IQE036N08NM6CGATMA1

TRENCH 40<-<100V

Produkt ist nicht verfügbar

IQE036N08NM6CGATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE036N08NM6CGSCATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE036N08NM6CGSCATMA1

MOSFET

Produkt ist nicht verfügbar

IQE036N08NM6CGSCATMA1

TRENCH 40<-<100V

Produkt ist nicht verfügbar

IQE036N08NM6SCATMA1

MOSFET

Produkt ist nicht verfügbar

IQE036N08NM6SCATMA1

TRENCH 40<-<100V

Produkt ist nicht verfügbar

IQE036N08NM6SCATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE046N08LM5ATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 2629 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.32 EUR
10+	5.28 EUR
100+	4.19 EUR
250+	3.87 EUR
500+	3.51 EUR
1000+	3.04 EUR
5000+	2.76 EUR

Mindestbestellmenge: 9

IQE046N08LM5ATMA1

Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

auf Bestellung 4185 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.27 EUR
10+	5.21 EUR
100+	4.15 EUR
500+	3.51 EUR
1000+	2.98 EUR
2000+	2.83 EUR

Mindestbestellmenge: 5

IQE046N08LM5ATMA1

Trans MOSFET N-CH 80V 15.6A

Produkt ist nicht verfügbar

IQE046N08LM5ATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

Produkt ist nicht verfügbar

IQE046N08LM5CGATMA1

Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-TTFN-9-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

auf Bestellung 4290 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.27 EUR
10+	5.21 EUR
100+	4.15 EUR
500+	3.51 EUR
1000+	2.98 EUR
2000+	2.83 EUR

Mindestbestellmenge: 5

IQE046N08LM5CGATMA1

MOSFET

auf Bestellung 86 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.32 EUR
10+	5.28 EUR
100+	4.19 EUR
250+	3.87 EUR
500+	3.51 EUR
1000+	3.04 EUR
5000+	2.76 EUR

Mindestbestellmenge: 9

IQE046N08LM5CGATMA1

Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-TTFN-9-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

Produkt ist nicht verfügbar

IQE046N08LM5CGATMA1

Trans MOSFET N-CH 80V 15.6A 9-Pin TTFN EP T/R

Produkt ist nicht verfügbar

IQE046N08LM5CGSCATMA1

MOSFET

auf Bestellung 19 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.94 EUR
10+	5.77 EUR
100+	4.6 EUR
250+	4.26 EUR
500+	3.87 EUR
1000+	3.3 EUR
2500+	3.15 EUR

Mindestbestellmenge: 8

IQE046N08LM5CGSCATMA1

TRENCH 40<-<100V

Produkt ist nicht verfügbar

IQE046N08LM5CGSCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

auf Bestellung 4955 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.89 EUR
10+	5.73 EUR
100+	4.56 EUR
500+	3.86 EUR
1000+	3.27 EUR
2000+	3.11 EUR

Mindestbestellmenge: 4

IQE046N08LM5CGSCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

Produkt ist nicht verfügbar

IQE046N08LM5SCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-WHSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

6000+	2.99 EUR

Mindestbestellmenge: 6000

IQE046N08LM5SCATMA1

Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Supplier Device Package: PG-WHSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V

auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.89 EUR
10+	5.73 EUR
100+	4.56 EUR
500+	3.86 EUR
1000+	3.27 EUR
2000+	3.11 EUR

Mindestbestellmenge: 4

IQE046N08LM5SCATMA1

MOSFET

auf Bestellung 6000 Stücke:

Lieferzeit 295-309 Tag (e)

8+	6.94 EUR
10+	5.77 EUR
100+	4.6 EUR
250+	4.26 EUR
500+	3.87 EUR
1000+	3.3 EUR
2500+	3.15 EUR

Mindestbestellmenge: 8

IQE046N08LM5SCATMA1

Trans MOSFET N-CH 80V 15.6A 8-Pin WHSON EP T/R

Produkt ist nicht verfügbar

IQE050N08NM5ATMA1

Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	3 EUR

Mindestbestellmenge: 5000

IQE050N08NM5ATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 4545 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.47 EUR
10+	5.46 EUR
25+	5.3 EUR
100+	4.42 EUR
250+	4.29 EUR
500+	3.93 EUR
1000+	3.17 EUR

Mindestbestellmenge: 9

IQE050N08NM5ATMA1

SP005583102

Produkt ist nicht verfügbar

IQE050N08NM5ATMA1

Description: INFINEON - IQE050N08NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 101 A, 0.0043 ohm, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 101A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0043ohm

auf Bestellung 8825 Stücke:

Lieferzeit 14-21 Tag (e)

IQE050N08NM5ATMA1

Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

auf Bestellung 9410 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.42 EUR
10+	5.39 EUR
100+	4.36 EUR
500+	3.88 EUR
1000+	3.32 EUR
2000+	3.13 EUR

Mindestbestellmenge: 5

IQE050N08NM5ATMA1

Description: INFINEON - IQE050N08NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 101 A, 0.0043 ohm, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 101A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 100W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TSON
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0043ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0043ohm

auf Bestellung 8825 Stücke:

Lieferzeit 14-21 Tag (e)

IQE050N08NM5CGATMA1

Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

auf Bestellung 9770 Stücke:

Lieferzeit 21-28 Tag (e)

5+	6.42 EUR
10+	5.41 EUR
100+	4.37 EUR
500+	3.89 EUR
1000+	3.33 EUR
2000+	3.13 EUR

Mindestbestellmenge: 5

IQE050N08NM5CGATMA1

SP005583114

Produkt ist nicht verfügbar

IQE050N08NM5CGATMA1

Description: INFINEON - IQE050N08NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 101 A, 0.0043 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 101A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 100W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TTFN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0043ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0043ohm

auf Bestellung 8835 Stücke:

Lieferzeit 14-21 Tag (e)

IQE050N08NM5CGATMA1

Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	3.01 EUR

Mindestbestellmenge: 5000

IQE050N08NM5CGATMA1

Description: INFINEON - IQE050N08NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 101 A, 0.0043 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 101A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0043ohm

auf Bestellung 8835 Stücke:

Lieferzeit 14-21 Tag (e)

IQE050N08NM5CGATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 437 Stücke:

Lieferzeit 14-28 Tag (e)

9+	6.47 EUR
10+	5.46 EUR
25+	5.3 EUR
100+	4.42 EUR
250+	4.29 EUR
500+	3.93 EUR
1000+	3.17 EUR

Mindestbestellmenge: 9

IQE050N08NM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

Produkt ist nicht verfügbar

IQE050N08NM5CGSCATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 1532 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.1 EUR
10+	5.98 EUR
25+	5.64 EUR
100+	4.84 EUR
250+	4.58 EUR
500+	4.32 EUR
1000+	3.67 EUR

Mindestbestellmenge: 8

IQE050N08NM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

Produkt ist nicht verfügbar

IQE050N08NM5CGSCATMA1

Trans MOSFET N-CH 80V 16A

Produkt ist nicht verfügbar

IQE050N08NM5SCATMA1

MOSFET TRENCH 40<-<100V

auf Bestellung 5180 Stücke:

Lieferzeit 14-28 Tag (e)

8+	7.12 EUR
10+	6.01 EUR
25+	5.67 EUR
100+	4.86 EUR
250+	4.6 EUR
500+	4.32 EUR
1000+	3.69 EUR

Mindestbestellmenge: 8

IQE050N08NM5SCATMA1

Trans MOSFET N-CH 80V 16A

Produkt ist nicht verfügbar

IQE050N08NM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

Produkt ist nicht verfügbar

IQE050N08NM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V

Produkt ist nicht verfügbar

IQE057N10NM6ATMA1

MOSFET

Produkt ist nicht verfügbar

IQE057N10NM6ATMA1

IQE057N10NM6ATMA1

Produkt ist nicht verfügbar

IQE057N10NM6ATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE057N10NM6CGATMA1

MOSFET

Produkt ist nicht verfügbar

IQE057N10NM6CGATMA1

IQE057N10NM6CGATMA1

Produkt ist nicht verfügbar

IQE057N10NM6CGATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE057N10NM6CGSCATMA1

IQE057N10NM6CGSCATMA1

Produkt ist nicht verfügbar

IQE057N10NM6CGSCATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE057N10NM6CGSCATMA1

MOSFET

Produkt ist nicht verfügbar

IQE057N10NM6SCATMA1

MOSFET

Produkt ist nicht verfügbar

IQE057N10NM6SCATMA1

IQE057N10NM6SCATMA1

Produkt ist nicht verfügbar

IQE057N10NM6SCATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

IQE065N10NM5ATMA1

MOSFET TRENCH >=100V

auf Bestellung 4770 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.81 EUR
10+	5.72 EUR
25+	5.56 EUR
100+	4.65 EUR
250+	4.5 EUR
500+	4.13 EUR
1000+	3.33 EUR

Mindestbestellmenge: 8

IQE065N10NM5ATMA1

SP005399446

Produkt ist nicht verfügbar

IQE065N10NM5ATMA1

Description: TRENCH >=100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

auf Bestellung 25000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	3.16 EUR

Mindestbestellmenge: 5000

IQE065N10NM5ATMA1

Description: TRENCH >=100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

auf Bestellung 28330 Stücke:

Lieferzeit 21-28 Tag (e)

6+	4.76 EUR
10+	3.99 EUR
100+	3.23 EUR
500+	3.16 EUR

Mindestbestellmenge: 6

IQE065N10NM5CGATMA1

Description: TRENCH >=100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

auf Bestellung 9930 Stücke:

Lieferzeit 21-28 Tag (e)

4+	6.71 EUR
10+	5.63 EUR
100+	4.55 EUR
500+	4.04 EUR
1000+	3.46 EUR
2000+	3.26 EUR

Mindestbestellmenge: 4

IQE065N10NM5CGATMA1

Description: INFINEON - IQE065N10NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 85 A, 0.0057 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 85A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TTFN
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0057ohm

auf Bestellung 4675 Stücke:

Lieferzeit 14-21 Tag (e)

IQE065N10NM5CGATMA1

Description: TRENCH >=100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)

5000+	3.13 EUR

Mindestbestellmenge: 5000

IQE065N10NM5CGATMA1

MOSFET TRENCH >=100V

auf Bestellung 5126 Stücke:

Lieferzeit 14-28 Tag (e)

8+	6.81 EUR
10+	5.72 EUR
25+	5.56 EUR
100+	4.65 EUR
250+	4.5 EUR
500+	4.13 EUR
1000+	3.33 EUR

Mindestbestellmenge: 8

IQE065N10NM5CGATMA1

SP005399451

Produkt ist nicht verfügbar

IQE065N10NM5CGATMA1

Description: INFINEON - IQE065N10NM5CGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 85 A, 0.0057 ohm, TTFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 85A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 100W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TTFN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 9Pin(s)
Produktpalette: OptiMOS 5 Series
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0057ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0057ohm

auf Bestellung 4675 Stücke:

Lieferzeit 14-21 Tag (e)

IQE065N10NM5CGSCATMA1

MOSFET

auf Bestellung 5817 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.49 EUR
10+	6.32 EUR
25+	5.95 EUR
100+	5.1 EUR
250+	4.81 EUR
500+	4.55 EUR
1000+	3.9 EUR

Mindestbestellmenge: 7

IQE065N10NM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

Produkt ist nicht verfügbar

IQE065N10NM5CGSCATMA1

Trans MOSFET N-CH 100V 13A 9-Pin WHTFN EP T/R

Produkt ist nicht verfügbar

IQE065N10NM5CGSCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

Produkt ist nicht verfügbar

IQE065N10NM5SCATMA1

Trans MOSFET N-CH 100V 13A 8-Pin WHSON EP T/R

Produkt ist nicht verfügbar

IQE065N10NM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

Produkt ist nicht verfügbar

IQE065N10NM5SCATMA1

MOSFET

auf Bestellung 4471 Stücke:

Lieferzeit 14-28 Tag (e)

7+	7.49 EUR
10+	6.32 EUR
25+	5.95 EUR
100+	5.1 EUR
250+	4.81 EUR
500+	4.55 EUR
1000+	3.9 EUR

Mindestbestellmenge: 7

IQE065N10NM5SCATMA1

Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V

Produkt ist nicht verfügbar

IQE220N15NM5ATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Supplier Device Package: PG-TSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V

Produkt ist nicht verfügbar

IQE220N15NM5ATMA1

MOSFET TRENCH >=100V

auf Bestellung 5000 Stücke:

Lieferzeit 196-210 Tag (e)

8+	7.15 EUR
10+	6.03 EUR
25+	5.69 EUR
100+	4.86 EUR
250+	4.6 EUR
500+	4.32 EUR
1000+	3.69 EUR

Mindestbestellmenge: 8

IQE220N15NM5ATMA1

Trans MOSFET N-CH 150V 7A 8-Pin TSON EP T/R

Produkt ist nicht verfügbar

IQE220N15NM5ATMA1

Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V

Produkt ist nicht verfügbar

IQE220N15NM5CGATMA1

MOSFET TRENCH >=100V

auf Bestellung 5000 Stücke:

Lieferzeit 196-210 Tag (e)

8+	7.15 EUR
10+	6.03 EUR
25+	5.69 EUR
100+	4.86 EUR
250+	4.6 EUR
500+	4.32 EUR
1000+	3.69 EUR

Mindestbestellmenge: 8

IQE220N15NM5CGATMA1

Trans MOSFET N-CH 150V 7A 9-Pin TTFN EP T/R

Produkt ist nicht verfügbar

IQE220N15NM5CGATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V

Produkt ist nicht verfügbar

IQE220N15NM5CGATMA1

Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V

Produkt ist nicht verfügbar

IQE220N15NM5CGSCATMA1

Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Supplier Device Package: PG-WHTFN-9

Produkt ist nicht verfügbar

IQE220N15NM5CGSCATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Supplier Device Package: PG-WHTFN-9

Produkt ist nicht verfügbar

IQE220N15NM5CGSCATMA1

MOSFET TRENCH >=100V

auf Bestellung 6000 Stücke:

Lieferzeit 196-210 Tag (e)

7+	7.85 EUR
10+	6.6 EUR
25+	6.21 EUR
100+	5.33 EUR
250+	5.02 EUR
500+	4.73 EUR
1000+	4.06 EUR

Mindestbestellmenge: 7

IQE220N15NM5CGSCATMA1

TRENCH >=100V

Produkt ist nicht verfügbar

IQE220N15NM5SCATMA1

Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Supplier Device Package: PG-WHSON-8

Produkt ist nicht verfügbar

IQE220N15NM5SCATMA1

MOSFET TRENCH >=100V

auf Bestellung 6000 Stücke:

Lieferzeit 196-210 Tag (e)

7+	7.85 EUR
10+	6.6 EUR
25+	6.21 EUR
100+	5.33 EUR
250+	5.02 EUR
500+	4.73 EUR
1000+	4.06 EUR

Mindestbestellmenge: 7

IQE220N15NM5SCATMA1

TRENCH >=100V

Produkt ist nicht verfügbar

IQE220N15NM5SCATMA1

Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Supplier Device Package: PG-WHSON-8

Produkt ist nicht verfügbar

iQE24009A120V-001-R

Description: DC DC CONVERTER 12V

auf Bestellung 16 Stücke:

Lieferzeit 21-28 Tag (e)

IQE24009A120V-001-R

Module DC-DC 24VIN 1-OUT 12V 9A 108W 8-Pin Quarter-Brick

Produkt ist nicht verfügbar

IQE24009A120V-007-R

Description: DC DC CONVERTER 12V 108W

Produkt ist nicht verfügbar

iQE24012A080V-001-R

Description: DC DC CONVERTER 8V 96W

Produkt ist nicht verfügbar

IQE24015A033V-031-R

Description: DC DC CONVERTER 3.3V 50W
Packaging: Tray
Features: Remote On/Off, OCP, OVP, SCP
Package / Case: Quarter Brick
Size / Dimension: 2.28" L x 1.45" W x 0.41" H (57.9mm x 36.8mm x 10.4mm)
Mounting Type: Through Hole
Type: Isolated Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 40V
Efficiency: 90%
Current - Output (Max): 15A
Supplier Device Package: Quarter Brick
Voltage - Input (Min): 16V
Voltage - Output 1: 3.3V
Part Status: Obsolete
Power (Watts): 50 W
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

Produkt ist nicht verfügbar

IQE24015A033V-031-R

Isolated DC/DC Converters - Through Hole 16-40VDC

Produkt ist nicht verfügbar

IQE24015A050V-031-R

Description: DC DC CONVERTER 5V 75W
Packaging: Tray
Features: Remote On/Off, OCP, OVP, SCP
Package / Case: Quarter Brick
Size / Dimension: 2.28" L x 1.45" W x 0.41" H (57.9mm x 36.8mm x 10.4mm)
Mounting Type: Through Hole
Type: Isolated Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 36V
Efficiency: 90%
Current - Output (Max): 15A
Voltage - Input (Min): 18V
Voltage - Output 1: 5V
Control Features: Enable, Active Low
Part Status: Obsolete
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

Produkt ist nicht verfügbar

iQE24024A050V-001-R

Isolated DC/DC Converters 18-36Vin 5V 24A 120W NegPlrty 1/4brick TH

auf Bestellung 68 Stücke:

Lieferzeit 14-28 Tag (e)

IQE24024A050V-001-R

Module DC-DC 24VIN 1-OUT 5V 24A 120W 8-Pin Quarter-Brick

Produkt ist nicht verfügbar

iQE24024A050V-001-R

Description: DC DC CONVERTER 5V 120W
Packaging: Bulk
Features: Remote On/Off, OCP, OVP
Package / Case: 8-DIP Module
Size / Dimension: 2.28" L x 1.45" W x 0.39" H (57.9mm x 36.8mm x 9.9mm)
Mounting Type: Through Hole
Type: Intermediate Bus Converter
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 36V
Efficiency: 90%
Current - Output (Max): 24A
Voltage - Input (Min): 18V
Voltage - Output 1: 5V
Control Features: Enable, Active Low
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

auf Bestellung 39 Stücke:

Lieferzeit 21-28 Tag (e)

1+	161.41 EUR

IQE24024A050V-007-R

Description: DC DC CONVERTER 5V 120W
Features: Remote On/Off, OCP, OVP, SCP
Packaging: Tray
Package / Case: Quarter Brick
Size / Dimension: 2.28" L x 1.45" W x 0.41" H (57.9mm x 36.8mm x 10.4mm)
Mounting Type: Through Hole
Type: Isolated Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 36V
Efficiency: 90%
Current - Output (Max): 24A
Supplier Device Package: Quarter Brick
Voltage - Input (Min): 18V
Voltage - Output 1: 5V
Power (Watts): 120 W
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

Produkt ist nicht verfügbar

IQE24030A033V-007-R

Isolated DC/DC Converters 18-36VDC

Produkt ist nicht verfügbar

iQE48010A150V-007-R

Isolated DC/DC Converters 48Vin15Vout 10A 150W PCB Mount 1/4 Brick

Produkt ist nicht verfügbar

IQE48017A120V-000-R

Isolated DC/DC Converters - Through Hole 36-75VDC

Produkt ist nicht verfügbar

iQE48017A120V-001-R

Description: DC DC CONVERTER 12V
Packaging: Tray
Features: Remote On/Off, OCP, OVP
Package / Case: 8-DIP Module, 1/4 Brick
Size / Dimension: 2.28" L x 1.45" W x 0.39" H (57.9mm x 36.8mm x 9.9mm)
Mounting Type: Through Hole
Type: Isolated Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 75V
Efficiency: 90%
Current - Output (Max): 17A
Voltage - Input (Min): 36V
Voltage - Output 1: 12V
Control Features: Enable, Active Low
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

auf Bestellung 30 Stücke:

Lieferzeit 21-28 Tag (e)

1+	207.38 EUR
5+	205.75 EUR
10+	204.14 EUR
25+	197.66 EUR

iQE48017A120V-001-R

Isolated DC/DC Converters - Through Hole 48Vin12Vout 17A 204W PCB Mount 1/4 Brick

auf Bestellung 72 Stücke:

Lieferzeit 175-189 Tag (e)

1+	193.26 EUR
10+	191.75 EUR
25+	176.51 EUR
50+	176.46 EUR
72+	164.35 EUR

IQE48017A120V-007-R

Isolated DC/DC Converters - Through Hole 36-75VDC

Produkt ist nicht verfügbar

IQE48030A050V-001-R

Isolated DC/DC Converters - Through Hole 36-75Vin 5V 30A 150W NegPlrty 1/4brick TH

Produkt ist nicht verfügbar

IQE48030A050V-001-R

TDK-Lambda Americas Inc.

Description: CONVRTR DC-DC 5V 30A 150W PCB

auf Bestellung 27 Stücke:

Lieferzeit 21-28 Tag (e)

iQE48040A033V-001-R

Isolated DC/DC Converters - Through Hole 48Vin3.3Vout40A 132W PCB Mount 1/4 Brick

Produkt ist nicht verfügbar

IQE4W011A120V-001-R

Module DC-DC 1-OUT 12V 11A 132W 8-Pin Quarter-Brick

Produkt ist nicht verfügbar

IQE4W011A120V-001-R

Description: DC DC CONVERTER 12V 132W
Packaging: Bulk
Features: Remote On/Off, OCP, OVP
Package / Case: 8-DIP Module
Size / Dimension: 2.28" L x 1.45" W x 0.39" H (57.9mm x 36.8mm x 9.9mm)
Mounting Type: Through Hole
Type: Intermediate Bus Converter
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 60V
Efficiency: 90%
Current - Output (Max): 11A
Voltage - Input (Min): 18V
Voltage - Output 1: 12V
Control Features: Enable, Active Low
Number of Outputs: 1
Voltage - Isolation: 1.5 kV

auf Bestellung 72 Stücke:

Lieferzeit 21-28 Tag (e)

1+	209.38 EUR
5+	207.72 EUR
10+	206.07 EUR
25+	192.77 EUR
50+	186.12 EUR

IQE4W011A120V-001-R

Isolated DC/DC Converters - Through Hole 18-60V 12Vout11A132W NegPlrty 1/4brick T

Produkt ist nicht verfügbar

IQE4W011A120V-001-R