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PJD-62DL1OCTEKCONN05+
auf Bestellung 815 Stücke:
Lieferzeit 21-28 Tag (e)
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PJD100N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Qualification: AEC-Q101
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PJD100N04-AU_L2_000A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJD100N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJD100N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Produkt ist nicht verfügbar
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PJD100N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5214 pF @ 25 V
Produkt ist nicht verfügbar
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PJD100N04_L2_00001PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJD100N06SA-AU_L2_006A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJD100N06SA-AU_L2_006A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.09 EUR
10+3.96 EUR
100+2.76 EUR
500+2.37 EUR
Mindestbestellmenge: 4 Stücke
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PJD100N06SA-AU_L2_006A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD100N06SA-AU_L2_006A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.94 EUR
Mindestbestellmenge: 3000 Stücke
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PJD100P03-L2-00001PanjitMOSFETs
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PJD100P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD100P03_L2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
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PJD100P03_L2_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD10N10-L2-00001PanjitMOSFET
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PJD10N10_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
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PJD10N10_L2_00001PanjitMOSFET 100V N-Channel MOSFET
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PJD10N10_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
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PJD10P10A-L2-00001PanjitMOSFETs
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PJD10P10A_L2_00001PanjitMOSFETs 100V P-Channel MOSFET
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PJD10P10A_L2_00001Panjit International Inc.Description: 100V P-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD10P10A_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD11N06A-AU-L2PanjitMOSFETs TO252 N CHAN 60V
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PJD11N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJD11N06A-AU_L2_000A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 1444 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.44 EUR
10+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
3000+0.35 EUR
6000+0.31 EUR
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PJD11N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2952 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
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PJD11N06A-L2-00001PanjitMOSFETs
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PJD11N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Produkt ist nicht verfügbar
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PJD11N06A_L2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.32 EUR
10+1.19 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.52 EUR
3000+0.3 EUR
6000+0.27 EUR
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PJD12N08-L2-00001PanjitMOSFETs
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PJD12P06-AU_L2_000A1PanjitMOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASD9/PJx12P06-ASE9/TO252-AS02
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PJD12P06-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD12P06_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Produkt ist nicht verfügbar
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PJD12P06_L2_00001PanjitMOSFET PJ/D12P06/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-60SMP//PJ/TO252-ASC8/PJx12P06-ASE9/TO252-AS02
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJD12P06_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
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PJD13N10A-L2-00001PanjitMOSFET TO-252AA/MOS/TO/NFET-100SMN
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PJD13N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
auf Bestellung 1779 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.4 EUR
25+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
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PJD13N10A_L2_00001PanjitMOSFETs 100V N-Channel MOSFET
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PJD13N10A_L2_00001Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
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PJD13N10A_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD14P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8336 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.03 EUR
17+1.26 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.57 EUR
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PJD14P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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PJD14P06A-AU_L2_000A1PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 1341 Stücke:
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3+1.4 EUR
10+0.88 EUR
100+0.57 EUR
500+0.43 EUR
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PJD14P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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PJD14P06A_L2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD14P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2865 Stücke:
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12+1.78 EUR
19+1.12 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.5 EUR
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PJD14P10A_L2_00001Panjit International Inc.Description: 100V P-CHANNEL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2298 pF @ 30 V
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PJD14P10A_L2_00001Panjit International Inc.Description: 100V P-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2298 pF @ 30 V
auf Bestellung 3279 Stücke:
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10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
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PJD15P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6306 Stücke:
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13+1.62 EUR
21+1 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
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PJD15P06A-AU_L2_000A1PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2595 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.58 EUR
10+0.99 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
3000+0.4 EUR
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PJD15P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.38 EUR
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PJD15P06A-AU_L2_000A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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PJD15P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8228 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.59 EUR
22+0.99 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
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PJD15P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.38 EUR
6000+0.35 EUR
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PJD15P06A_L2_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 1081 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.89 EUR
10+1.27 EUR
100+0.81 EUR
500+0.57 EUR
1000+0.5 EUR
3000+0.36 EUR
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PJD15P06A_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Produkt ist nicht verfügbar
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PJD16N06A-AU-L2PanjitMOSFETs
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PJD16N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD16N06A-AU_L2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD16N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD16N06A-AU_L2_000A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJD16N06A-L2-00001PanjitMOSFETs
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PJD16N06A_L2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJD16N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD16N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD16N06A_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD16N08A-L2-00001PanjitMOSFET
Produkt ist nicht verfügbar
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PJD16P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
6000+0.38 EUR
9000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
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PJD16P06A-AU_L2_000A1PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.83 EUR
10+1.14 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
3000+0.46 EUR
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PJD16P06A-AU_L2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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PJD16P06A-L2-00001PanjitMOSFET
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PJD16P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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PJD16P06A_L2_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
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10+1.2 EUR
100+0.79 EUR
500+0.62 EUR
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PJD16P06A_L2_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
On-state resistance: 65mΩ
Power dissipation: 2W
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PJD16P06A_L2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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PJD18N20-L2-00001PanjitMOSFETs TO252 200V 18A N-CH
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PJD18N20_L2_00001Panjit International Inc.Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
auf Bestellung 6669 Stücke:
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PJD18N20_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
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PJD18N20_L2_00001Panjit International Inc.Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
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PJD18N20_L2_00001PanjitMOSFETs 200V N-Channel Enhancement Mode MOSFET
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10+1.56 EUR
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PJD1NA50_L2_00001PanjitMOSFET 500V N-Channel MOSFET
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PJD1NA60B_L2_00001PanjitMOSFET PJ/D1NA60B/TRL/13"/HF/3K/TO-252AA/MOS/TO/NFET-600SMN//PJ/TO252-ASA2/PJx1NA60B-AS29/TO252-AS02
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PJD1NA60_L2_00001PanjitESD Suppressors / TVS Diodes TVS ESD SOD-123S 60V 96.8V
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PJD25N03-L2-00001PanjitMOSFET TO-252AA/MOS/TO/NFET-30SMN
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PJD25N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
auf Bestellung 14584 Stücke:
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PJD25N03_L2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
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PJD25N03_L2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
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9000+0.24 EUR
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PJD25N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
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PJD25N04-AU_L2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
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PJD25N04-L2-00001PanjitMOSFET
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PJD25N04V-AU_L2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJD25N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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PJD25N04_L2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
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PJD25N04_L2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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PJD25N06A-AU_L2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD25N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.5 EUR
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PJD25N06A-AU_L2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2.4W (Ta), 48.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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17+1.26 EUR
100+0.82 EUR
500+0.64 EUR
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PJD25N06A_L2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 2171 Stücke:
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PJD25N06A_L2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
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