Suchergebnisse für "nm60" : > 60

Wählen Sie Seite:   1 2  Nächste Seite >> ]
Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
LED 3mm gelb 590nm 60° (L-934LYD-Kingbright) LED 3mm gelb 590nm 60° (L-934LYD-Kingbright)
Produktcode: 43043
zu Favoriten hinzufügen Lieblingsprodukt

Kingbright 3004.pdf LEDs > LEDs sichtbare Spektrum Ausführungs-
Farbe (Wellenlänge): gelb (590nm)
Gehäuse: 3mm
Linse, Typ: Diffusiongelb
Spannungsfall, V: 2,1
Lichtstärke / Lichtstrom: 1,5 mcd
Lichtwinkel: 60°
Analogon: Кругла
ZCODE: 590 nm
auf Bestellung 52 Stück:
Lieferzeit 21-28 Tag (e)
1+0.07 EUR
10+0.07 EUR
100+0.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NM6002-CS NEWAVE 1999 SOP
auf Bestellung 619 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NM6038F
auf Bestellung 35871 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STB11NM60T4 STB11NM60T4 STMicroelectronics en.CD00005066.pdf Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.33 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB11NM60T4 STB11NM60T4 STMicroelectronics stp11nm60-1851412.pdf MOSFETs N-Ch 600 Volt 11 Amp
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.11 EUR
10+5.23 EUR
25+4.84 EUR
100+3.87 EUR
500+3.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB11NM60T4 STB11NM60T4 STMicroelectronics en.CD00005066.pdf Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1512 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.89 EUR
10+5.93 EUR
100+4.24 EUR
500+3.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB13NM60N STB13NM60N STMicroelectronics en.DM00073069.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.00 EUR
10+6.69 EUR
100+4.82 EUR
500+4.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB20NM60T4 STB20NM60T4 STMicroelectronics stb20nm60-1850276.pdf MOSFETs N-Ch 600 Volt 20 Amp
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.54 EUR
10+8.52 EUR
500+8.38 EUR
1000+3.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB22NM60N STB22NM60N STMicroelectronics cd00237949-1797000.pdf MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB24NM60N STB24NM60N STMicroelectronics stb24nm60n-1850225.pdf MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II
auf Bestellung 533 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.21 EUR
10+7.20 EUR
100+5.42 EUR
500+5.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.97 EUR
10+8.09 EUR
100+5.89 EUR
500+4.96 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB26NM60N STB26NM60N STMicroelectronics en.CD00232934.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 2049 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.71 EUR
10+9.32 EUR
100+6.85 EUR
500+5.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB26NM60N STB26NM60N STMicroelectronics stb26nm60n-1850226.pdf MOSFETs POWER MOSFET N-CH 600V
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.48 EUR
10+9.17 EUR
100+6.78 EUR
500+6.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB28NM60ND STB28NM60ND STMicroelectronics ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.72 EUR
10+10.78 EUR
100+7.99 EUR
500+7.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB28NM60ND STB28NM60ND STMicroelectronics ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+7.09 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60N STB34NM60N STMicroelectronics stb34nm60n-1850141.pdf MOSFETs N-Ch 600V 0.092Ohm 29A MDMesh II MOS
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.10 EUR
10+11.56 EUR
100+9.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60N STB34NM60N STMicroelectronics en.CD00279556.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.59 EUR
10+12.86 EUR
100+9.63 EUR
500+8.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60ND STB34NM60ND STMicroelectronics sgsts50105_1-2282691.pdf MOSFETs N-Ch Power Mosfet 600V 0.097 Ohm 29A
auf Bestellung 1745 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.12 EUR
10+12.32 EUR
25+12.30 EUR
100+9.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60ND STB34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+9.52 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60ND STB34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.68 EUR
10+13.66 EUR
100+10.27 EUR
500+9.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB7ANM60N STB7ANM60N STMicroelectronics en.DM00058125.pdf Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STB7ANM60N STB7ANM60N STMicroelectronics en.DM00058125.pdf Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.27 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB8NM60T4 STB8NM60T4 STMicroelectronics en.CD00002085.pdf MOSFETs N-Ch 650 Volt 5 Amp
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N STMicroelectronics STD10NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2221 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
58+1.24 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N STMicroelectronics STD10NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2221 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.25 EUR
58+1.24 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 3782 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.44 EUR
10+4.21 EUR
100+2.95 EUR
500+2.41 EUR
1000+2.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf MOSFETs N-channel 600 V Mdmesh 10A
auf Bestellung 4457 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.07 EUR
10+3.08 EUR
100+2.52 EUR
500+2.25 EUR
1000+2.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60ND STD10NM60ND STMicroelectronics std10nm60nd.pdf Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.82 EUR
10+3.14 EUR
100+2.16 EUR
500+1.75 EUR
1000+1.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60ND STD10NM60ND STMicroelectronics std10nm60nd.pdf MOSFETs N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.79 EUR
10+3.12 EUR
100+2.16 EUR
500+1.74 EUR
1000+1.58 EUR
2500+1.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD11NM60ND STD11NM60ND STMicroelectronics STX11NM60ND.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.87 EUR
10+5.20 EUR
100+3.69 EUR
500+3.05 EUR
1000+2.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STD13NM60N STMicroelectronics STB13NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1448 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
32+2.25 EUR
60+1.20 EUR
64+1.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STD13NM60N STMicroelectronics STB13NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1448 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.25 EUR
32+2.25 EUR
60+1.20 EUR
64+1.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STD13NM60N STMicroelectronics stb13nm60n-1850342.pdf MOSFETs N-Ch 600 Volt 11 Amp Power MDmesh
auf Bestellung 9696 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.75 EUR
10+3.38 EUR
100+2.76 EUR
500+2.29 EUR
1000+2.13 EUR
2500+2.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STD13NM60N STMicroelectronics en.DM00073069.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STD13NM60N STMicroelectronics en.DM00073069.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.14 EUR
10+4.02 EUR
100+2.81 EUR
500+2.29 EUR
1000+2.13 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9424 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.42 EUR
10+4.90 EUR
100+3.92 EUR
500+3.46 EUR
1000+3.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf MOSFETs N-CH 600V 0.32Ohm 11A MDmesh II Plus
auf Bestellung 4778 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.88 EUR
10+4.56 EUR
100+3.80 EUR
500+3.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.29 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD3NM60N STD3NM60N STMicroelectronics std3nm60n-1850403.pdf MOSFETs N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.95 EUR
10+1.53 EUR
100+1.13 EUR
500+0.91 EUR
1000+0.84 EUR
2500+0.81 EUR
5000+0.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60-1 STMicroelectronics en.CD00002085.pdf STD5NM60-1 THT N channel transistors
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)
48+1.50 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60-1 STD5NM60-1 STMicroelectronics en.CD00002085.pdf MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 2064 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.91 EUR
10+2.48 EUR
100+2.13 EUR
250+2.11 EUR
500+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 ST en.CD00002085.pdf Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 5A; 96W; -55°C ~ 150°C; STD5NM60T4 TSTD5NM60t4
Anzahl je Verpackung: 10 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.08 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 2085 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.24 EUR
10+2.34 EUR
100+1.90 EUR
500+1.71 EUR
1000+1.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 8045 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.07 EUR
10+3.30 EUR
100+2.28 EUR
500+1.84 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 STMicroelectronics en.CD00002085.pdf N-канальний ПТ; Udss, В = 600; Id = 5 А; Ciss, пФ @ Uds, В = 400 @ 25; Qg, нКл = 18 @ 10 В; Rds = 1 Ом @ 2,5 А, 10 В; Ugs(th) = 5 В @ 250 мкА; Р, Вт = 96; Тексп, °C = -55...+150; Тип монт. = smd; DPAK-3
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
4+1.79 EUR
10+1.55 EUR
100+1.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD7ANM60N STD7ANM60N STMicroelectronics en.DM00058125.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5270 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.41 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.20 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STD7ANM60N STD7ANM60N STMicroelectronics en.DM00058125.pdf MOSFETs N-CH 600V 5A 0.84Ohm MDmesh II
auf Bestellung 1246 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.12 EUR
10+2.11 EUR
100+1.59 EUR
500+1.30 EUR
1000+1.17 EUR
2500+1.08 EUR
5000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N ST en.CD00252114.pdf Transistor N-Channel MOSFET; 600V; 25V; 900mOhm; 5A; 45W; -55°C ~ 150°C; STD7NM60N TSTD7NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.91 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N STD7NM60N STMicroelectronics std7nm60n-1850531.pdf MOSFETs N-channel 600 V5 A 0.84 Ohm DPAK
auf Bestellung 3387 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.24 EUR
10+2.97 EUR
100+2.08 EUR
500+1.69 EUR
1000+1.56 EUR
2500+1.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N STD7NM60N STMicroelectronics en.CD00252114.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 11162 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.91 EUR
10+3.18 EUR
100+2.19 EUR
500+1.77 EUR
1000+1.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N STD7NM60N STMicroelectronics en.CD00252114.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.49 EUR
5000+1.48 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD9NM60N STD9NM60N STMicroelectronics en.CD00286931.pdf Description: MOSFET N-CH 600V 6.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.67 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD9NM60N STD9NM60N STMicroelectronics en.CD00286931.pdf Description: MOSFET N-CH 600V 6.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.37 EUR
10+3.48 EUR
100+2.41 EUR
500+1.96 EUR
1000+1.81 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD9NM60N STD9NM60N STMicroelectronics std9nm60n-1850534.pdf MOSFETs N-Ch 600V 0.63 6.5A MDmesh II Power MO
auf Bestellung 2419 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.04 EUR
10+2.24 EUR
100+1.78 EUR
500+1.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STE70NM60 STE70NM60 STMicroelectronics ste70nm60-1850560.pdf description MOSFETs N-Ch 600 Volt 70 Amp
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
1+84.99 EUR
10+66.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
56+1.29 EUR
73+0.98 EUR
78+0.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
56+1.29 EUR
73+0.98 EUR
78+0.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
STF10NM60N STF10NM60N STMicroelectronics stf10nm60n-2489164.pdf MOSFETs N-channel 600 V Mdmesh 8A
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.90 EUR
10+6.69 EUR
25+3.56 EUR
100+3.22 EUR
500+2.71 EUR
1000+2.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
LED 3mm gelb 590nm 60° (L-934LYD-Kingbright)
Produktcode: 43043
zu Favoriten hinzufügen Lieblingsprodukt

3004.pdf
LED 3mm gelb 590nm 60° (L-934LYD-Kingbright)
Hersteller: Kingbright
LEDs > LEDs sichtbare Spektrum Ausführungs-
Farbe (Wellenlänge): gelb (590nm)
Gehäuse: 3mm
Linse, Typ: Diffusiongelb
Spannungsfall, V: 2,1
Lichtstärke / Lichtstrom: 1,5 mcd
Lichtwinkel: 60°
Analogon: Кругла
ZCODE: 590 nm
auf Bestellung 52 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+0.07 EUR
10+0.07 EUR
100+0.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NM6002-CS
Hersteller: NEWAVE
1999 SOP
auf Bestellung 619 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NM6038F
auf Bestellung 35871 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STB11NM60T4 en.CD00005066.pdf
STB11NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.33 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB11NM60T4 stp11nm60-1851412.pdf
STB11NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 11 Amp
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.11 EUR
10+5.23 EUR
25+4.84 EUR
100+3.87 EUR
500+3.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB11NM60T4 en.CD00005066.pdf
STB11NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.89 EUR
10+5.93 EUR
100+4.24 EUR
500+3.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB13NM60N en.DM00073069.pdf
STB13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.00 EUR
10+6.69 EUR
100+4.82 EUR
500+4.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB20NM60T4 stb20nm60-1850276.pdf
STB20NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 20 Amp
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.54 EUR
10+8.52 EUR
500+8.38 EUR
1000+3.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB22NM60N cd00237949-1797000.pdf
STB22NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB24NM60N stb24nm60n-1850225.pdf
STB24NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II
auf Bestellung 533 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.21 EUR
10+7.20 EUR
100+5.42 EUR
500+5.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB24NM60N en.DM00022852.pdf
STB24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.97 EUR
10+8.09 EUR
100+5.89 EUR
500+4.96 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB26NM60N en.CD00232934.pdf
STB26NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 2049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.71 EUR
10+9.32 EUR
100+6.85 EUR
500+5.90 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB26NM60N stb26nm60n-1850226.pdf
STB26NM60N
Hersteller: STMicroelectronics
MOSFETs POWER MOSFET N-CH 600V
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.48 EUR
10+9.17 EUR
100+6.78 EUR
500+6.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB28NM60ND ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf
STB28NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.72 EUR
10+10.78 EUR
100+7.99 EUR
500+7.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STB28NM60ND ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf
STB28NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+7.09 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60N stb34nm60n-1850141.pdf
STB34NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.092Ohm 29A MDMesh II MOS
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.10 EUR
10+11.56 EUR
100+9.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60N en.CD00279556.pdf
STB34NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.59 EUR
10+12.86 EUR
100+9.63 EUR
500+8.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60ND sgsts50105_1-2282691.pdf
STB34NM60ND
Hersteller: STMicroelectronics
MOSFETs N-Ch Power Mosfet 600V 0.097 Ohm 29A
auf Bestellung 1745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.12 EUR
10+12.32 EUR
25+12.30 EUR
100+9.89 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60ND STx34NM60ND_DS.pdf
STB34NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+9.52 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB34NM60ND STx34NM60ND_DS.pdf
STB34NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.68 EUR
10+13.66 EUR
100+10.27 EUR
500+9.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB7ANM60N en.DM00058125.pdf
STB7ANM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STB7ANM60N en.DM00058125.pdf
STB7ANM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.27 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
STB8NM60T4 en.CD00002085.pdf
STB8NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 5 Amp
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N.pdf
STD10NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
58+1.24 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N STD10NM60N.pdf
STD10NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2221 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.25 EUR
58+1.24 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N std10nm60n.pdf
STD10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 3782 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
10+4.21 EUR
100+2.95 EUR
500+2.41 EUR
1000+2.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N std10nm60n.pdf
STD10NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V Mdmesh 10A
auf Bestellung 4457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.07 EUR
10+3.08 EUR
100+2.52 EUR
500+2.25 EUR
1000+2.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60N std10nm60n.pdf
STD10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60ND std10nm60nd.pdf
STD10NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.82 EUR
10+3.14 EUR
100+2.16 EUR
500+1.75 EUR
1000+1.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD10NM60ND std10nm60nd.pdf
STD10NM60ND
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.79 EUR
10+3.12 EUR
100+2.16 EUR
500+1.74 EUR
1000+1.58 EUR
2500+1.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD11NM60ND STX11NM60ND.pdf
STD11NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.87 EUR
10+5.20 EUR
100+3.69 EUR
500+3.05 EUR
1000+2.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STB13NM60N.pdf
STD13NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
32+2.25 EUR
60+1.20 EUR
64+1.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N STB13NM60N.pdf
STD13NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1448 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.25 EUR
32+2.25 EUR
60+1.20 EUR
64+1.13 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N stb13nm60n-1850342.pdf
STD13NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 11 Amp Power MDmesh
auf Bestellung 9696 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.75 EUR
10+3.38 EUR
100+2.76 EUR
500+2.29 EUR
1000+2.13 EUR
2500+2.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N en.DM00073069.pdf
STD13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60N en.DM00073069.pdf
STD13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+4.02 EUR
100+2.81 EUR
500+2.29 EUR
1000+2.13 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.42 EUR
10+4.90 EUR
100+3.92 EUR
500+3.46 EUR
1000+3.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.32Ohm 11A MDmesh II Plus
auf Bestellung 4778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.88 EUR
10+4.56 EUR
100+3.80 EUR
500+3.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.29 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD3NM60N std3nm60n-1850403.pdf
STD3NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.95 EUR
10+1.53 EUR
100+1.13 EUR
500+0.91 EUR
1000+0.84 EUR
2500+0.81 EUR
5000+0.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60-1 en.CD00002085.pdf
Hersteller: STMicroelectronics
STD5NM60-1 THT N channel transistors
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
48+1.50 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60-1 en.CD00002085.pdf
STD5NM60-1
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 2064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.91 EUR
10+2.48 EUR
100+2.13 EUR
250+2.11 EUR
500+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 en.CD00002085.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 5A; 96W; -55°C ~ 150°C; STD5NM60T4 TSTD5NM60t4
Anzahl je Verpackung: 10 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.08 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 2085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.24 EUR
10+2.34 EUR
100+1.90 EUR
500+1.71 EUR
1000+1.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 8045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.07 EUR
10+3.30 EUR
100+2.28 EUR
500+1.84 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD5NM60T4 en.CD00002085.pdf
Hersteller: STMicroelectronics
N-канальний ПТ; Udss, В = 600; Id = 5 А; Ciss, пФ @ Uds, В = 400 @ 25; Qg, нКл = 18 @ 10 В; Rds = 1 Ом @ 2,5 А, 10 В; Ugs(th) = 5 В @ 250 мкА; Р, Вт = 96; Тексп, °C = -55...+150; Тип монт. = smd; DPAK-3
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+1.79 EUR
10+1.55 EUR
100+1.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD7ANM60N en.DM00058125.pdf
STD7ANM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.41 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.20 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STD7ANM60N en.DM00058125.pdf
STD7ANM60N
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 5A 0.84Ohm MDmesh II
auf Bestellung 1246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.12 EUR
10+2.11 EUR
100+1.59 EUR
500+1.30 EUR
1000+1.17 EUR
2500+1.08 EUR
5000+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N en.CD00252114.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 25V; 900mOhm; 5A; 45W; -55°C ~ 150°C; STD7NM60N TSTD7NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.91 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N std7nm60n-1850531.pdf
STD7NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V5 A 0.84 Ohm DPAK
auf Bestellung 3387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.24 EUR
10+2.97 EUR
100+2.08 EUR
500+1.69 EUR
1000+1.56 EUR
2500+1.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N en.CD00252114.pdf
STD7NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 11162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.91 EUR
10+3.18 EUR
100+2.19 EUR
500+1.77 EUR
1000+1.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM60N en.CD00252114.pdf
STD7NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.49 EUR
5000+1.48 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD9NM60N en.CD00286931.pdf
STD9NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.67 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD9NM60N en.CD00286931.pdf
STD9NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+3.48 EUR
100+2.41 EUR
500+1.96 EUR
1000+1.81 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STD9NM60N std9nm60n-1850534.pdf
STD9NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.63 6.5A MDmesh II Power MO
auf Bestellung 2419 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.04 EUR
10+2.24 EUR
100+1.78 EUR
500+1.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STE70NM60 description ste70nm60-1850560.pdf
STE70NM60
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 70 Amp
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+84.99 EUR
10+66.30 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
56+1.29 EUR
73+0.98 EUR
78+0.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
56+1.29 EUR
73+0.98 EUR
78+0.93 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
STF10NM60N stf10nm60n-2489164.pdf
STF10NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V Mdmesh 8A
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.90 EUR
10+6.69 EUR
25+3.56 EUR
100+3.22 EUR
500+2.71 EUR
1000+2.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   1 2  Nächste Seite >> ]