Suchergebnisse für "nm60" : > 60

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LED 3mm gelb 590nm 60 ° (L-934LYD-Kingbright) LED 3mm gelb 590nm 60 ° (L-934LYD-Kingbright)
Produktcode: 43043
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Kingbright 3004.pdf LEDs > LEDs sichtbare Spektrum Ausführungs-
Farbe (Wellenlänge): gelb
Gehäuse / Abmessungen: 3 mm
Linse, Typ: diffus gelb
Spannungsfall, V: 2,1 V
Lichtstärke / Lichtstrom: 1,5 mcd
Abstrahlwinkel: 60°
Form: Rund
Wellenlänge / Farbtemperatur: 590 нм
auf Bestellung: 2 St.
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1+0.13 EUR
100+0.12 EUR
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NM6002-CS NEWAVE 1999 SOP
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NM6038F
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4DHDMI-101-1920-1200-CT-NM-600 4DHDMI-101-1920-1200-CT-NM-600 4D Systems 4DHDMI_Datasheet_R_1_0.pdf TFT Displays & Accessories 12.1'' 1280 x 800 500cd/m2 Capacitive Touch Display Module
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4DLCD-50-800-480-NT-NM-600-R 4D LCD Pty Ltd Description: GRAPHIC DISPLAY TFT RGB 5"
Packaging: Box
Display Type: TFT - Color, IPS (In-Plane Switching)
Display Mode: Transmissive
Backlight: LED
Interface: Parallel, 24-Bit (RGB)
Viewing Area: 108.00mm W x 64.80mm H
Dot Pixels: 800 x 480
Diagonal Screen Size: 5" (127.00mm)
Graphics Color: Red, Green, Blue (RGB)
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STB11NM60T4 STB11NM60T4 STMicroelectronics en.CD00005066.pdf MOSFETs N-Ch 600 Volt 11 Amp
auf Bestellung 1088 Stücke:
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STB11NM60T4 STB11NM60T4 STMicroelectronics en.CD00005066.pdf Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1444 Stücke:
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STB11NM60T4 STB11NM60T4 STMicroelectronics en.CD00005066.pdf Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1000 Stücke:
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STB13NM60N STB13NM60N STMicroelectronics en.DM00073069.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 592 Stücke:
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STB20NM60T4 STB20NM60T4 STMicroelectronics en.CD00002505.pdf MOSFETs N-Ch 600 Volt 20 Amp
auf Bestellung 191 Stücke:
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STB22NM60N STB22NM60N STMicroelectronics en.CD00237949.pdf MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
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STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II
auf Bestellung 223 Stücke:
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STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 685 Stücke:
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10+9.48 EUR
100+6.9 EUR
500+6.63 EUR
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STB26NM60N STB26NM60N STMicroelectronics en.CD00232934.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 1777 Stücke:
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STB26NM60N STB26NM60N STMicroelectronics en.CD00232934.pdf MOSFETs POWER MOSFET N-CH 600V
auf Bestellung 680 Stücke:
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STB26NM60N STB26NM60N STMicroelectronics en.CD00232934.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 1000 Stücke:
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1000+6.13 EUR
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STB28NM60ND STB28NM60ND STMicroelectronics ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
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2+13.72 EUR
10+9.26 EUR
100+6.74 EUR
500+6.43 EUR
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STB28NM60ND STB28NM60ND STMicroelectronics ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+5.32 EUR
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STB34NM60N STB34NM60N STMicroelectronics en.CD00279556.pdf MOSFETs N-Ch 600V 0.092Ohm 29A MDMesh II MOS
auf Bestellung 560 Stücke:
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STB34NM60N STB34NM60N STMicroelectronics en.CD00279556.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
auf Bestellung 381 Stücke:
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STB7ANM60N STB7ANM60N STMicroelectronics en.DM00058125.pdf Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 716 Stücke:
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STB8NM60T4 STB8NM60T4 STMicroelectronics en.CD00002085.pdf MOSFETs N-Ch 650 Volt 5 Amp
auf Bestellung 919 Stücke:
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STD10NM60N STD10NM60N STMicroelectronics STD10NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2021 Stücke:
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25+3.45 EUR
37+2.31 EUR
100+1.9 EUR
500+1.78 EUR
1000+1.69 EUR
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STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 3079 Stücke:
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STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf MOSFETs N-channel 600 V Mdmesh 10A
auf Bestellung 3643 Stücke:
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STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2500 Stücke:
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2500+2.36 EUR
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STD10NM60ND STD10NM60ND STMicroelectronics std10nm60nd.pdf Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
auf Bestellung 1380 Stücke:
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STD13NM60N STD13NM60N STMicroelectronics STB13NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
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21+4.16 EUR
25+3.42 EUR
28+3.06 EUR
50+2.33 EUR
100+2.11 EUR
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STD13NM60N STD13NM60N STMicroelectronics en.DM00073069.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2500 Stücke:
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2500+2.43 EUR
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STD13NM60N STD13NM60N STMicroelectronics en.DM00073069.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 3402 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.58 EUR
10+4.97 EUR
100+3.49 EUR
500+2.9 EUR
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9407 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.22 EUR
10+6.79 EUR
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500+4.33 EUR
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf MOSFETs N-CH 600V 0.32Ohm 11A MDmesh II Plus
auf Bestellung 4041 Stücke:
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10+4.76 EUR
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STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf MOSFETs N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
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1+3.42 EUR
10+1.86 EUR
100+1.33 EUR
500+1.14 EUR
1000+1.02 EUR
2500+0.92 EUR
5000+0.89 EUR
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STD5NM60-1 STD5NM60-1 STMicroelectronics std5nm60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 18nC
auf Bestellung 123 Stücke:
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47+1.82 EUR
75+1.51 EUR
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STD5NM60-1 STD5NM60-1 STMicroelectronics en.CD00002085.pdf MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 1997 Stücke:
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1+6.58 EUR
10+3.12 EUR
100+2.98 EUR
500+2.51 EUR
1000+2.26 EUR
3000+2.05 EUR
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STD5NM60T4 ST en.CD00002085.pdf Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 5A; 96W; -55°C ~ 150°C; STD5NM60T4 TSTD5NM60t4
Anzahl je Verpackung: 10 Stücke
auf Bestellung 85 Stücke:
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20+2.2 EUR
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STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf MOSFETs N-Ch 600 Volt 5 Amp
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1+5.74 EUR
10+2.92 EUR
100+2.15 EUR
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STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 5000 Stücke:
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2500+1.81 EUR
5000+1.7 EUR
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STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6652 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.9 EUR
10+3.83 EUR
100+2.65 EUR
500+2.14 EUR
1000+2.07 EUR
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STD7NM60N ST en.CD00252114.pdf Transistor N-Channel MOSFET; 600V; 25V; 900mOhm; 5A; 45W; -55°C ~ 150°C; STD7NM60N TSTD7NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 14 Stücke:
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20+2.94 EUR
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STD7NM60N ST en.CD00252114.pdf Transistor N-Channel MOSFET; 600V; 25V; 900mOhm; 5A; 45W; -55°C ~ 150°C; STD7NM60N TSTD7NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
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20+2.94 EUR
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STD7NM60N STD7NM60N STMicroelectronics en.CD00252114.pdf MOSFETs N-channel 600 V5 A 0.84 Ohm DPAK
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.59 EUR
10+2.98 EUR
100+2.2 EUR
500+1.86 EUR
1000+1.8 EUR
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STD7NM60N STD7NM60N STMicroelectronics en.CD00252114.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.74 EUR
5000+1.63 EUR
7500+1.61 EUR
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STD7NM60N STD7NM60N STMicroelectronics en.CD00252114.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 10866 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.71 EUR
10+3.7 EUR
100+2.55 EUR
500+2.06 EUR
1000+1.98 EUR
Mindestbestellmenge: 4 Stücke
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STD9NM60N STD9NM60N STMicroelectronics en.CD00286931.pdf Description: MOSFET N-CH 600V 6.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
auf Bestellung 2312 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.28 EUR
10+4.08 EUR
100+2.83 EUR
500+2.3 EUR
1000+2.24 EUR
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STD9NM60N STD9NM60N STMicroelectronics en.CD00286931.pdf MOSFETs N-Ch 600V 0.63 6.5A MDmesh II Power MO
auf Bestellung 2141 Stücke:
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1+5.34 EUR
10+3.09 EUR
100+2.31 EUR
500+2.03 EUR
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STE70NM60 STE70NM60 STMicroelectronics ste70nm60.pdf description Category: Transistor modules
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 70A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 55mΩ
Pulsed drain current: 44A
Power dissipation: 600W
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
2+60.38 EUR
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STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.8 EUR
25+3.47 EUR
31+2.8 EUR
41+2.09 EUR
50+1.78 EUR
100+1.63 EUR
Mindestbestellmenge: 18 Stücke
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STF10NM60N ST std10nm60n.pdf N-MOSFET 10A 600V 25W 0.55Ω STF10NM60N TSTF10NM60n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
50+2.89 EUR
Mindestbestellmenge: 50 Stücke
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STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf MOSFETs N-channel 600 V Mdmesh 8A
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.28 EUR
10+3.8 EUR
100+3.56 EUR
500+3.03 EUR
1000+2.76 EUR
2000+2.53 EUR
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STF10NM60N STF10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.16 EUR
50+4.18 EUR
100+3.8 EUR
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STF10NM60ND STF10NM60ND STMicroelectronics std10nm60nd.pdf MOSFETs N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
auf Bestellung 946 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.74 EUR
10+2.39 EUR
100+2.14 EUR
1000+2.12 EUR
2000+1.98 EUR
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STF11NM60ND STF11NM60ND STMicroelectronics STX11NM60ND.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 30nC
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.62 EUR
23+3.87 EUR
25+3.61 EUR
50+3.44 EUR
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STF11NM60ND STF11NM60ND STMicroelectronics STX11NM60ND.pdf MOSFETs N-Ch, 600V-0.37ohms FDMesh 10A
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.22 EUR
10+5.34 EUR
100+4.61 EUR
500+4.05 EUR
1000+3.81 EUR
2000+3.75 EUR
5000+3.69 EUR
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STF13NM60N STF13NM60N STMicroelectronics STB13NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.65 EUR
26+3.3 EUR
50+2.46 EUR
100+2.34 EUR
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STF13NM60N ST en.CD00226101.pdf Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP STF13NM60N TSTF13NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.81 EUR
Mindestbestellmenge: 10 Stücke
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STF13NM60N STF13NM60N STMicroelectronics en.CD00226101.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 753 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.47 EUR
50+5.46 EUR
100+4.97 EUR
500+4.13 EUR
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STF13NM60N STF13NM60N STMicroelectronics en.CD00226101.pdf MOSFETs N-CH 600V 11A MDMESH Power MDmesh
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.81 EUR
10+7.08 EUR
100+5.21 EUR
500+4.63 EUR
1000+4.11 EUR
2000+4.08 EUR
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STF13NM60ND STF13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.57 EUR
25+3.42 EUR
50+3.17 EUR
100+3.05 EUR
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LED 3mm gelb 590nm 60 ° (L-934LYD-Kingbright)
Produktcode: 43043
zu Favoriten hinzufügen Lieblingsprodukt
3004.pdf
LED 3mm gelb 590nm 60 ° (L-934LYD-Kingbright)
Hersteller: Kingbright
LEDs > LEDs sichtbare Spektrum Ausführungs-
Farbe (Wellenlänge): gelb
Gehäuse / Abmessungen: 3 mm
Linse, Typ: diffus gelb
Spannungsfall, V: 2,1 V
Lichtstärke / Lichtstrom: 1,5 mcd
Abstrahlwinkel: 60°
Form: Rund
Wellenlänge / Farbtemperatur: 590 нм
auf Bestellung: 2 St.
  • 2 St. - Lieferzeit 21-28 Tag (e)
AnzahlPrivatkunde
1+0.13 EUR
100+0.12 EUR
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NM6002-CS
Hersteller: NEWAVE
1999 SOP
auf Bestellung 619 Stücke:
Lieferzeit 21-28 Tag (e)
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NM6038F
auf Bestellung 35871 Stücke:
Lieferzeit 21-28 Tag (e)
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4DHDMI-101-1920-1200-CT-NM-600 4DHDMI_Datasheet_R_1_0.pdf
4DHDMI-101-1920-1200-CT-NM-600
Hersteller: 4D Systems
TFT Displays & Accessories 12.1'' 1280 x 800 500cd/m2 Capacitive Touch Display Module
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+351.15 EUR
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4DLCD-50-800-480-NT-NM-600-R
Hersteller: 4D LCD Pty Ltd
Description: GRAPHIC DISPLAY TFT RGB 5"
Packaging: Box
Display Type: TFT - Color, IPS (In-Plane Switching)
Display Mode: Transmissive
Backlight: LED
Interface: Parallel, 24-Bit (RGB)
Viewing Area: 108.00mm W x 64.80mm H
Dot Pixels: 800 x 480
Diagonal Screen Size: 5" (127.00mm)
Graphics Color: Red, Green, Blue (RGB)
auf Bestellung 46 Stücke:
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1+117.45 EUR
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STB11NM60T4 en.CD00005066.pdf
STB11NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 11 Amp
auf Bestellung 1088 Stücke:
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1+10.2 EUR
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100+4.86 EUR
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STB11NM60T4 en.CD00005066.pdf
STB11NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1444 Stücke:
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3+10.39 EUR
10+6.91 EUR
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STB11NM60T4 en.CD00005066.pdf
STB11NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+3.83 EUR
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STB13NM60N en.DM00073069.pdf
STB13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 592 Stücke:
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2+11.66 EUR
10+7.81 EUR
100+5.62 EUR
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STB20NM60T4 en.CD00002505.pdf
STB20NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 20 Amp
auf Bestellung 191 Stücke:
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1+10.64 EUR
10+6.97 EUR
100+5.21 EUR
500+4.36 EUR
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2000+3.81 EUR
5000+3.77 EUR
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STB22NM60N en.CD00237949.pdf
STB22NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
auf Bestellung 1019 Stücke:
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1+9.26 EUR
10+7 EUR
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STB24NM60N en.DM00022852.pdf
STB24NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.168 Ohm 17A Mdmesh II
auf Bestellung 223 Stücke:
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1+13.76 EUR
10+9.32 EUR
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STB24NM60N en.DM00022852.pdf
STB24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 685 Stücke:
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2+14.03 EUR
10+9.48 EUR
100+6.9 EUR
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STB26NM60N en.CD00232934.pdf
STB26NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 1777 Stücke:
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2+15.4 EUR
10+10.46 EUR
100+7.66 EUR
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STB26NM60N en.CD00232934.pdf
STB26NM60N
Hersteller: STMicroelectronics
MOSFETs POWER MOSFET N-CH 600V
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+15.1 EUR
10+10.26 EUR
100+7.52 EUR
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STB26NM60N en.CD00232934.pdf
STB26NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+6.13 EUR
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STB28NM60ND ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf
STB28NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.72 EUR
10+9.26 EUR
100+6.74 EUR
500+6.43 EUR
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STB28NM60ND ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf
STB28NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+5.32 EUR
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STB34NM60N en.CD00279556.pdf
STB34NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.092Ohm 29A MDMesh II MOS
auf Bestellung 560 Stücke:
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1+20.55 EUR
10+14.2 EUR
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STB34NM60N en.CD00279556.pdf
STB34NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
auf Bestellung 381 Stücke:
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1+20.94 EUR
10+14.46 EUR
100+11.25 EUR
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STB7ANM60N en.DM00058125.pdf
STB7ANM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 716 Stücke:
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AnzahlPrivatkunde
5+4.41 EUR
10+2.83 EUR
100+1.93 EUR
500+1.54 EUR
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STB8NM60T4 en.CD00002085.pdf
STB8NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 5 Amp
auf Bestellung 919 Stücke:
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AnzahlPrivatkunde
1+8.27 EUR
10+3.8 EUR
100+3.12 EUR
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STD10NM60N STD10NM60N.pdf
STD10NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2021 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.45 EUR
37+2.31 EUR
100+1.9 EUR
500+1.78 EUR
1000+1.69 EUR
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STD10NM60N std10nm60n.pdf
STD10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 3079 Stücke:
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AnzahlPrivatkunde
3+7.38 EUR
10+4.83 EUR
100+3.39 EUR
500+2.8 EUR
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STD10NM60N std10nm60n.pdf
STD10NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V Mdmesh 10A
auf Bestellung 3643 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.38 EUR
10+3.37 EUR
100+2.64 EUR
500+2.34 EUR
1000+2.32 EUR
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STD10NM60N std10nm60n.pdf
STD10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.36 EUR
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STD10NM60ND std10nm60nd.pdf
STD10NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.28 EUR
10+3.42 EUR
100+2.36 EUR
500+1.95 EUR
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STD13NM60N STB13NM60N.pdf
STD13NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.16 EUR
25+3.42 EUR
28+3.06 EUR
50+2.33 EUR
100+2.11 EUR
250+1.86 EUR
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STD13NM60N en.DM00073069.pdf
STD13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.43 EUR
Mindestbestellmenge: 2500 Stücke
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STD13NM60N en.DM00073069.pdf
STD13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 3402 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.58 EUR
10+4.97 EUR
100+3.49 EUR
500+2.9 EUR
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STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 9407 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.22 EUR
10+6.79 EUR
100+4.86 EUR
500+4.33 EUR
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STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.55 EUR
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STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 0.32Ohm 11A MDmesh II Plus
auf Bestellung 4041 Stücke:
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1+9.47 EUR
10+4.76 EUR
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
auf Bestellung 2098 Stücke:
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AnzahlPrivatkunde
1+3.42 EUR
10+1.86 EUR
100+1.33 EUR
500+1.14 EUR
1000+1.02 EUR
2500+0.92 EUR
5000+0.89 EUR
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STD5NM60-1 std5nm60.pdf
STD5NM60-1
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 18nC
auf Bestellung 123 Stücke:
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AnzahlPrivatkunde
47+1.82 EUR
75+1.51 EUR
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STD5NM60-1 en.CD00002085.pdf
STD5NM60-1
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.58 EUR
10+3.12 EUR
100+2.98 EUR
500+2.51 EUR
1000+2.26 EUR
3000+2.05 EUR
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STD5NM60T4 en.CD00002085.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 5A; 96W; -55°C ~ 150°C; STD5NM60T4 TSTD5NM60t4
Anzahl je Verpackung: 10 Stücke
auf Bestellung 85 Stücke:
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AnzahlPrivatkunde
20+2.2 EUR
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STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 5 Amp
auf Bestellung 1304 Stücke:
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AnzahlPrivatkunde
1+5.74 EUR
10+2.92 EUR
100+2.15 EUR
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STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.81 EUR
5000+1.7 EUR
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STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6652 Stücke:
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AnzahlPrivatkunde
4+5.9 EUR
10+3.83 EUR
100+2.65 EUR
500+2.14 EUR
1000+2.07 EUR
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STD7NM60N en.CD00252114.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 25V; 900mOhm; 5A; 45W; -55°C ~ 150°C; STD7NM60N TSTD7NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+2.94 EUR
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STD7NM60N en.CD00252114.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 600V; 25V; 900mOhm; 5A; 45W; -55°C ~ 150°C; STD7NM60N TSTD7NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+2.94 EUR
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STD7NM60N en.CD00252114.pdf
STD7NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V5 A 0.84 Ohm DPAK
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.59 EUR
10+2.98 EUR
100+2.2 EUR
500+1.86 EUR
1000+1.8 EUR
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STD7NM60N en.CD00252114.pdf
STD7NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.74 EUR
5000+1.63 EUR
7500+1.61 EUR
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STD7NM60N en.CD00252114.pdf
STD7NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
auf Bestellung 10866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
10+3.7 EUR
100+2.55 EUR
500+2.06 EUR
1000+1.98 EUR
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STD9NM60N en.CD00286931.pdf
STD9NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
auf Bestellung 2312 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.28 EUR
10+4.08 EUR
100+2.83 EUR
500+2.3 EUR
1000+2.24 EUR
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STD9NM60N en.CD00286931.pdf
STD9NM60N
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.63 6.5A MDmesh II Power MO
auf Bestellung 2141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.34 EUR
10+3.09 EUR
100+2.31 EUR
500+2.03 EUR
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STE70NM60 description ste70nm60.pdf
STE70NM60
Hersteller: STMicroelectronics
Category: Transistor modules
Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 44A; 600W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 70A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 55mΩ
Pulsed drain current: 44A
Power dissipation: 600W
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Kind of package: tube
Mechanical mounting: screw
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+60.38 EUR
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STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.8 EUR
25+3.47 EUR
31+2.8 EUR
41+2.09 EUR
50+1.78 EUR
100+1.63 EUR
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STF10NM60N std10nm60n.pdf
Hersteller: ST
N-MOSFET 10A 600V 25W 0.55Ω STF10NM60N TSTF10NM60n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
50+2.89 EUR
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STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V Mdmesh 8A
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.28 EUR
10+3.8 EUR
100+3.56 EUR
500+3.03 EUR
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2000+2.53 EUR
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STF10NM60N std10nm60n.pdf
STF10NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.16 EUR
50+4.18 EUR
100+3.8 EUR
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STF10NM60ND std10nm60nd.pdf
STF10NM60ND
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
auf Bestellung 946 Stücke:
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AnzahlPrivatkunde
1+4.74 EUR
10+2.39 EUR
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STF11NM60ND STX11NM60ND.pdf
STF11NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 30nC
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.62 EUR
23+3.87 EUR
25+3.61 EUR
50+3.44 EUR
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STF11NM60ND STX11NM60ND.pdf
STF11NM60ND
Hersteller: STMicroelectronics
MOSFETs N-Ch, 600V-0.37ohms FDMesh 10A
auf Bestellung 99 Stücke:
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AnzahlPrivatkunde
1+10.22 EUR
10+5.34 EUR
100+4.61 EUR
500+4.05 EUR
1000+3.81 EUR
2000+3.75 EUR
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STF13NM60N STB13NM60N.pdf
STF13NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 6.93A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ ||
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.65 EUR
26+3.3 EUR
50+2.46 EUR
100+2.34 EUR
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STF13NM60N en.CD00226101.pdf
Hersteller: ST
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP STF13NM60N TSTF13NM60N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+4.81 EUR
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STF13NM60N en.CD00226101.pdf
STF13NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 753 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.47 EUR
50+5.46 EUR
100+4.97 EUR
500+4.13 EUR
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STF13NM60N en.CD00226101.pdf
STF13NM60N
Hersteller: STMicroelectronics
MOSFETs N-CH 600V 11A MDMESH Power MDmesh
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+10.81 EUR
10+7.08 EUR
100+5.21 EUR
500+4.63 EUR
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2000+4.08 EUR
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STF13NM60ND STx13NM60ND_DS.pdf
STF13NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.57 EUR
25+3.42 EUR
50+3.17 EUR
100+3.05 EUR
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