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CY7C1612KV18-360BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
Produkt ist nicht verfügbar
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ITS428L2ATMA1 ITS428L2ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.8A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Supply voltage: 4.75...43V DC
Kind of output: N-Channel
On-state resistance: 50mΩ
auf Bestellung 2445 Stücke:
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26+2.82 EUR
40+1.82 EUR
42+1.72 EUR
100+1.7 EUR
250+1.64 EUR
Mindestbestellmenge: 26
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BTS5014SDAAUMA1 BTS5014SDAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
On-state resistance: 14mΩ
Produkt ist nicht verfügbar
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BTF50060-1TEA BTF50060-1TEA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697B223EDCF6469&compId=BTF50060-1TEA.pdf?ci_sign=e1be472a26e3d85aaa2541f4c3aea49b3d1f49e9 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 16.5A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: HITFET®
Supply voltage: 6...19V DC
Kind of output: P-Channel
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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BTS5016SDA BTS5016SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.5A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Kind of output: N-Channel
On-state resistance: 16mΩ
Produkt ist nicht verfügbar
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BSZ042N06NSATMA1 BSZ042N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0AE54F44E11C&compId=BSZ042N06NS-DTE.pdf?ci_sign=46fb1ddaeace9d8dd0dc0d9a46dce1c20cd41622 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69969DC48CDC11C&compId=IPI032N06N3G-DTE.pdf?ci_sign=0ed6764248a27474389bf554d52fca3a99220ba2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Polarisation: unipolar
On-state resistance: 3.2mΩ
Power dissipation: 188W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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2ED300C17SROHSBPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0 Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Operating temperature: -25...85°C
Supply voltage: 14...16V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Frequency: 60kHz
Case: AG-EICE
Technology: EiceDRIVER™; SiC
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Type of semiconductor module: gate driver board
Kind of output: IGBT driver
Produkt ist nicht verfügbar
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2265 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
199+0.36 EUR
285+0.25 EUR
334+0.21 EUR
807+0.089 EUR
863+0.083 EUR
Mindestbestellmenge: 143
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SMBD914E6327HTSA1 SMBD914E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8368E20BE8469&compId=SMBD914E6327HTSA1.pdf?ci_sign=d7e375d887a04009b6541d4fc1a0393c8d2ccbbc Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Power dissipation: 0.37W
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2+35.75 EUR
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BGX50AE6327 BGX50AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Type of diode: switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Power dissipation: 0.21W
auf Bestellung 2561 Stücke:
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414+0.17 EUR
468+0.15 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 414
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IDW30G65C5XKSA1 IDW30G65C5XKSA1 INFINEON TECHNOLOGIES IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; PG-TO247-3; 150W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 139A
Leakage current: 6.1µA
Power dissipation: 150W
Kind of package: tube
Produkt ist nicht verfügbar
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IRGIB7B60KDPBF IRGIB7B60KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2226D33A230BEF1A303005056AB0C4F&compId=irgib7b60kdpbf.pdf?ci_sign=aced0bb6bcd7e99bedf03e7efae534501b577fb6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 12A; 39W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 12A
Power dissipation: 39W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEDFAB46113D7&compId=IKCM20L60GA.pdf?ci_sign=dd653c89070a6b043f926e264dac78d345231d50 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29.2W
Voltage class: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
Frequency: 20kHz
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -20...20A
Produkt ist nicht verfügbar
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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB9CAFC0364143&compId=IPU80R1K4P7.pdf?ci_sign=6ace7a65f867c52cbfecf47f0c7e7e4b71b3378b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1173 Stücke:
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52+1.4 EUR
93+0.78 EUR
132+0.54 EUR
139+0.52 EUR
525+0.5 EUR
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IPA80R1K4P7XKSA1 IPA80R1K4P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 8.9A
Produkt ist nicht verfügbar
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IPD80R1K4CEATMA1 IPD80R1K4CEATMA1 INFINEON TECHNOLOGIES Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA80R1K4CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 3.9A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 1.22Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
auf Bestellung 1500 Stücke:
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100+1.07 EUR
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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 329 Stücke:
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37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
115+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 91
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PVG612PBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 3710 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.76 EUR
Mindestbestellmenge: 50
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IRF7465TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY7C1062GE30-10BGXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1062G30-10BGXI INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1062G30-10BGXIT INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1062GE30-10BGXI INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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S25FL256SAGBHMC03 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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BSP296NH6433XTMA1 INFINEON TECHNOLOGIES BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 1.2A; 1.8W; SOT223; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: 20V
On-state resistance: 329mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 4000 Stücke:
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4000+0.34 EUR
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BSP315PL6327 BSP315PL6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD634664BCD95EA&compId=BSP315P.pdf?ci_sign=43cc5485f025ab5946966845bf8e18aa30e3ad13 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
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BSP315PH6327XTSA1 BSP315PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92148C01BBD1CC&compId=BSP315PH6327XTSA1-dte.pdf?ci_sign=d16382970b6d0f196c8c2dc24b5aae9857640e5b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1180 Stücke:
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103+0.7 EUR
145+0.5 EUR
182+0.39 EUR
280+0.26 EUR
296+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 103
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IRF6775MTRPBF IRF6775MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Power dissipation: 89W
Drain-source voltage: 150V
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TLE7469GV53AUMA1 INFINEON TECHNOLOGIES Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04 Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+3.76 EUR
Mindestbestellmenge: 1000
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IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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PVT312LSPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: SMT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Max. operating current: 0.17A
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
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50+5.92 EUR
100+5.33 EUR
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PVT312PBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Max. operating current: 320mA
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
auf Bestellung 1768 Stücke:
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50+5.92 EUR
100+5.33 EUR
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PVT312SPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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TLE4675GATMA1 TLE4675GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC6EDB89A6FEA15&compId=TLE4675.pdf?ci_sign=8117f73a824aa33199d9aa395c2e5683aad09f84 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: PG-TO263-5
Operating temperature: -40...150°C
Voltage drop: 0.25V
Output current: 0.4A
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.29 EUR
25+2.97 EUR
33+2.17 EUR
35+2.04 EUR
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IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: OptiMOS™ 3
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IPD050N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.56 EUR
Mindestbestellmenge: 2500
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BSC050N10NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.16 EUR
Mindestbestellmenge: 5000
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IPB050N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.89 EUR
Mindestbestellmenge: 800
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IPP050N10NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 150W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 51nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 968 Stücke:
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100+1.33 EUR
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IRFU220NPBF IRFU220NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E77534B81F1A6F5005056AB5A8F&compId=irfr220n.pdf?ci_sign=9d90063032c51c3cdaede40f8de04e9fb81e953d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
On-state resistance: 0.6Ω
Mounting: THT
Case: IPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Gate charge: 15nC
Power dissipation: 43W
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 148 Stücke:
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55+1.32 EUR
70+1.03 EUR
130+0.55 EUR
143+0.5 EUR
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IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
On-state resistance: 46mΩ
Mounting: THT
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Gate charge: 72nC
Power dissipation: 310W
Gate-source voltage: ±30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 68 Stücke:
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21+3.53 EUR
22+3.39 EUR
23+3.2 EUR
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IRFB4228PBF IRFB4228PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B73DF1A6F5005056AB5A8F&compId=irfb4228pbf.pdf?ci_sign=c76c55ba351c4f18b4679077e4b312a62afa7c33 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
On-state resistance: 12mΩ
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Gate-source voltage: ±30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 106 Stücke:
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18+4.2 EUR
26+2.76 EUR
28+2.6 EUR
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
46+1.57 EUR
73+0.99 EUR
77+0.93 EUR
100+0.92 EUR
250+0.9 EUR
Mindestbestellmenge: 35
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
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BFP183E7764HTSA1 INFINEON TECHNOLOGIES Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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SGW50N60HS SGW50N60HS INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B455D9BC6EC469&compId=SGW50N60HS.pdf?ci_sign=718c15903ce0d6a5268dc9a1e82eba2162229ae3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI10I12MFXUMA1 1EDI10I12MFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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IPAN60R280PFD7SXKSA1 IPAN60R280PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 24W
Pulsed drain current: 31A
Drain-source voltage: 650V
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 549mΩ
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Mounting: SMD
Case: TO252
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 51W
Pulsed drain current: 31A
Drain-source voltage: 600V
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 549mΩ
Produkt ist nicht verfügbar
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PVA3054NPBF INFINEON TECHNOLOGIES pva30n.pdf?fileId=5546d462533600a4015356839c762923 Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PVA; THT; DIP8; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Insulation voltage: 4kV
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
50+7.44 EUR
Mindestbestellmenge: 50
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PVA3054NSPBF INFINEON TECHNOLOGIES pva30n.pdf?fileId=5546d462533600a4015356839c762923 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.27 EUR
Mindestbestellmenge: 50
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BSP742T BSP742T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869766A91DFD2469&compId=BSP742T.pdf?ci_sign=e6e8ebf8ffc3284c7138eee105ccea59d6a3f9de Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1567 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
35+2.09 EUR
50+1.44 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 23
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CY7C1612KV18-360BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
Produkt ist nicht verfügbar
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ITS428L2ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb
ITS428L2ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.8A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Supply voltage: 4.75...43V DC
Kind of output: N-Channel
On-state resistance: 50mΩ
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
40+1.82 EUR
42+1.72 EUR
100+1.7 EUR
250+1.64 EUR
Mindestbestellmenge: 26
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BTS5014SDAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986790EA776469&compId=BTS5014SDA.pdf?ci_sign=2df677d362e5c63f61f5d0e01a54278934d5371d
BTS5014SDAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
On-state resistance: 14mΩ
Produkt ist nicht verfügbar
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BTF50060-1TEA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697B223EDCF6469&compId=BTF50060-1TEA.pdf?ci_sign=e1be472a26e3d85aaa2541f4c3aea49b3d1f49e9
BTF50060-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 16.5A; Ch: 1; P-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 16.5A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: HITFET®
Supply voltage: 6...19V DC
Kind of output: P-Channel
On-state resistance: 6.8mΩ
Produkt ist nicht verfügbar
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BTS5016SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986F30BF6F6469&compId=BTS5016SDA.pdf?ci_sign=8fd750d125e24136a23686b117b43d3f31b35a35
BTS5016SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 5.5A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Kind of output: N-Channel
On-state resistance: 16mΩ
Produkt ist nicht verfügbar
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BSZ042N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E0AE54F44E11C&compId=BSZ042N06NS-DTE.pdf?ci_sign=46fb1ddaeace9d8dd0dc0d9a46dce1c20cd41622
BSZ042N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69969DC48CDC11C&compId=IPI032N06N3G-DTE.pdf?ci_sign=0ed6764248a27474389bf554d52fca3a99220ba2
IPI032N06N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Polarisation: unipolar
On-state resistance: 3.2mΩ
Power dissipation: 188W
Drain current: 120A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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2ED300C17SROHSBPSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8EF15375D3CBE0C7&compId=2ED300C17S.pdf?ci_sign=de48bb685dd09aaef7868c9babf206260b9f5ee0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Operating temperature: -25...85°C
Supply voltage: 14...16V DC
Output current: 30A
Voltage class: 1.7kV
Application: for medium and high power application
Frequency: 60kHz
Case: AG-EICE
Technology: EiceDRIVER™; SiC
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Type of semiconductor module: gate driver board
Kind of output: IGBT driver
Produkt ist nicht verfügbar
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BSS308PEH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928895033F11CC&compId=BSS308PEH6327XTSA1-DTE.pdf?ci_sign=2bf63919c5470e9e78796983318a7cd255dfb425
BSS308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
199+0.36 EUR
285+0.25 EUR
334+0.21 EUR
807+0.089 EUR
863+0.083 EUR
Mindestbestellmenge: 143
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SMBD914E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB8368E20BE8469&compId=SMBD914E6327HTSA1.pdf?ci_sign=d7e375d887a04009b6541d4fc1a0393c8d2ccbbc
SMBD914E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Power dissipation: 0.37W
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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BGX50AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EB833A719C42469&compId=BGX50AE6327.pdf?ci_sign=31c8574b03909b1c4b15ea8d7da7173be948042b
BGX50AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Type of diode: switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Power dissipation: 0.21W
auf Bestellung 2561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
414+0.17 EUR
468+0.15 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 414
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IDW30G65C5XKSA1 IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca
IDW30G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; PG-TO247-3; 150W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 139A
Leakage current: 6.1µA
Power dissipation: 150W
Kind of package: tube
Produkt ist nicht verfügbar
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IRGIB7B60KDPBF pVersion=0046&contRep=ZT&docId=E2226D33A230BEF1A303005056AB0C4F&compId=irgib7b60kdpbf.pdf?ci_sign=aced0bb6bcd7e99bedf03e7efae534501b577fb6
IRGIB7B60KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 12A; 39W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 12A
Power dissipation: 39W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACEDFAB46113D7&compId=IKCM20L60GA.pdf?ci_sign=dd653c89070a6b043f926e264dac78d345231d50
IKCM20L60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Case: PG-MDIP24
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29.2W
Voltage class: 600V
Kind of integrated circuit: 3-phase motor controller; IPM
Frequency: 20kHz
Technology: ClPOS™ Mini; TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -20...20A
Produkt ist nicht verfügbar
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IPU80R1K4P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB9CAFC0364143&compId=IPU80R1K4P7.pdf?ci_sign=6ace7a65f867c52cbfecf47f0c7e7e4b71b3378b
IPU80R1K4P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
93+0.78 EUR
132+0.54 EUR
139+0.52 EUR
525+0.5 EUR
Mindestbestellmenge: 52
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IPA80R1K4P7XKSA1 Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c
IPA80R1K4P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 8.9A
Produkt ist nicht verfügbar
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IPD80R1K4CEATMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPD80R1K4CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA80R1K4CEXKSA2 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 3.9A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 1.22Ω
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.07 EUR
Mindestbestellmenge: 100
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IPP80R1K2P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBAEBA74EE80143&compId=IPP80R1K2P7.pdf?ci_sign=1b0708e76114029cb0c9c403ab9149266548bc6e
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 329 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBB8B84A4D56143&compId=IPU80R1K2P7.pdf?ci_sign=d3eea91f58a62d4babd0dbac4aad2c4ad81ff66c
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
101+0.71 EUR
114+0.63 EUR
115+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 91
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IPD80R1K2P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA4F04963CD2143&compId=IPD80R1K2P7.pdf?ci_sign=53abc1d247d444f69459d15f762c386837b73d91
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 3710 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.76 EUR
Mindestbestellmenge: 50
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IRF7465TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBF pVersion=0046&contRep=ZT&docId=E221A48740D119F1A303005056AB0C4F&compId=irf7465pbf.pdf?ci_sign=cc3ec770d5137fb965e0fe69e49e73454b16f1b1
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY7C1062GE30-10BGXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1062G30-10BGXI Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1062G30-10BGXIT Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1062GE30-10BGXI Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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S25FL256SAGBHMC03 download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 1.2A; 1.8W; SOT223; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: 20V
On-state resistance: 329mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
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BSP315PL6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD634664BCD95EA&compId=BSP315P.pdf?ci_sign=43cc5485f025ab5946966845bf8e18aa30e3ad13
BSP315PL6327
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP315PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92148C01BBD1CC&compId=BSP315PH6327XTSA1-dte.pdf?ci_sign=d16382970b6d0f196c8c2dc24b5aae9857640e5b
BSP315PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
145+0.5 EUR
182+0.39 EUR
280+0.26 EUR
296+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 103
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IRF6775MTRPBF pVersion=0046&contRep=ZT&docId=E21F71FD58A9D5F1A303005056AB0C4F&compId=irf6775mpbf.pdf?ci_sign=c0ef2e83ee833978b3a3af32dcf3e110c8b2ac83
IRF6775MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; 89W; DirectFET
Kind of package: reel
Case: DirectFET
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 28A
Power dissipation: 89W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
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TLE7469GV53AUMA1 Infineon-TLE7469-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f9e958903f04
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+3.76 EUR
Mindestbestellmenge: 1000
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IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Produkt ist nicht verfügbar
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PVT312LSPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: SMT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Max. operating current: 0.17A
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
Leads: for PCB
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; PV
Type of relay: solid state
Manufacturer series: PV
Mounting: THT
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Max. operating current: 320mA
Control voltage: 1.2V DC
Case: DIP6
Insulation voltage: 4kV
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+5.92 EUR
100+5.33 EUR
Mindestbestellmenge: 50
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TLE4675GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AFC6EDB89A6FEA15&compId=TLE4675.pdf?ci_sign=8117f73a824aa33199d9aa395c2e5683aad09f84
TLE4675GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: PG-TO263-5
Operating temperature: -40...150°C
Voltage drop: 0.25V
Output current: 0.4A
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
25+2.97 EUR
33+2.17 EUR
35+2.04 EUR
Mindestbestellmenge: 22
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IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD050N10N5ATMA1 Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.56 EUR
Mindestbestellmenge: 2500
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
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IPB050N10NF2SATMA1 Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.89 EUR
Mindestbestellmenge: 800
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IPP050N10NF2SAKMA1 Infineon-IPP050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276fa42a30176fa66f3a90008
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 150W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 51nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+1.33 EUR
Mindestbestellmenge: 100
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IRFU220NPBF pVersion=0046&contRep=ZT&docId=E1C04E77534B81F1A6F5005056AB5A8F&compId=irfr220n.pdf?ci_sign=9d90063032c51c3cdaede40f8de04e9fb81e953d
IRFU220NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
On-state resistance: 0.6Ω
Mounting: THT
Case: IPAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Gate charge: 15nC
Power dissipation: 43W
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
70+1.03 EUR
130+0.55 EUR
143+0.5 EUR
Mindestbestellmenge: 55
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IRFP4229PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACB21F1A6F5005056AB5A8F&compId=irfp4229pbf.pdf?ci_sign=a0fd40e9d046581bf815839d866323c8a4e0c1fe
IRFP4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
On-state resistance: 46mΩ
Mounting: THT
Case: TO247AC
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Gate charge: 72nC
Power dissipation: 310W
Gate-source voltage: ±30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
22+3.39 EUR
23+3.2 EUR
Mindestbestellmenge: 21
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IRFB4228PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B73DF1A6F5005056AB5A8F&compId=irfb4228pbf.pdf?ci_sign=c76c55ba351c4f18b4679077e4b312a62afa7c33
IRFB4228PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
On-state resistance: 12mΩ
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Gate-source voltage: ±30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
26+2.76 EUR
28+2.6 EUR
Mindestbestellmenge: 18
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IDP15E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
46+1.57 EUR
73+0.99 EUR
77+0.93 EUR
100+0.92 EUR
250+0.9 EUR
Mindestbestellmenge: 35
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IDP15E65D1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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SGW50N60HS pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B455D9BC6EC469&compId=SGW50N60HS.pdf?ci_sign=718c15903ce0d6a5268dc9a1e82eba2162229ae3
SGW50N60HS
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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1EDI30I12MFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c
1EDI30I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI10I12MFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c
1EDI10I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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1EDI20I12MFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DE0A51A198BF&compId=1EDIxxI12MF.pdf?ci_sign=145fb7d90f013347b7813f67d148905823549b4c
1EDI20I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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IPAN60R280PFD7SXKSA1 Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926
IPAN60R280PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 24W
Pulsed drain current: 31A
Drain-source voltage: 650V
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 549mΩ
Produkt ist nicht verfügbar
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IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Mounting: SMD
Case: TO252
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 51W
Pulsed drain current: 31A
Drain-source voltage: 600V
Technology: CoolMOS™ PFD7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 549mΩ
Produkt ist nicht verfügbar
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PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; Ucntrl: 1.2VDC; 25mA; PVA; THT; DIP8; -40÷85°C
Type of relay: solid state
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Insulation voltage: 4kV
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.44 EUR
Mindestbestellmenge: 50
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PVA3054NSPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Operating temperature: -40...85°C
Body dimensions: 9.4x6.5x3.9mm
Leads: Gull Wing
Insulation voltage: 4kV
auf Bestellung 956 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.27 EUR
Mindestbestellmenge: 50
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BSP742T pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869766A91DFD2469&compId=BSP742T.pdf?ci_sign=e6e8ebf8ffc3284c7138eee105ccea59d6a3f9de
BSP742T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
35+2.09 EUR
50+1.44 EUR
53+1.36 EUR
500+1.3 EUR
Mindestbestellmenge: 23
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