Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126343) > Seite 2093 nach 2106
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IRFB4410PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 951 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4020PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IHW40N135R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 40A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 305nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Turn-off time: 0.5µs |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
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ITS42008SBDAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 8; N-Channel; SMD; PG-DSO-36 Case: PG-DSO-36 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: power switch Kind of output: N-Channel Power dissipation: 3.3W Operating temperature: -40...125°C Technology: Industrial PROFET Turn-on time: 150µs Turn-off time: 0.1ms Kind of integrated circuit: high-side Number of channels: 8 On-state resistance: 0.2Ω Supply voltage: 11...45V DC Output current: 0.7A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ITS4200SSJDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8 Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: power switch Kind of output: N-Channel Operating temperature: -40...125°C Technology: Industrial PROFET Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Output current: 1.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BTS71202EPGXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLE7233EMXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TLE7233GXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2ED300C17SROHSBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV Topology: IGBT half-bridge Mounting: PCB Supply voltage: 14...16V DC Output current: 30A Kind of output: IGBT driver Type of semiconductor module: gate driver board Operating temperature: -25...85°C Integrated circuit features: galvanically isolated; integrated DC/DC converter Technology: EiceDRIVER™; SiC Application: for medium and high power application Voltage class: 1.7kV Case: AG-EICE Frequency: 60kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2ED300C17STROHSBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV Topology: IGBT half-bridge Mounting: PCB Supply voltage: 14...16V DC Output current: 30A Kind of output: IGBT driver Type of semiconductor module: gate driver board Operating temperature: -40...85°C Integrated circuit features: galvanically isolated; integrated DC/DC converter Technology: EiceDRIVER™ Application: for medium and high power application Voltage class: 1.7kV Case: AG-EICE Frequency: 60kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCV61BE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCV61BE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FM24CL04B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4b FRAM Interface: I2C Memory organisation: 512x8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM24CL16B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1620 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM24CL16B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: I2C Memory organisation: 2kx8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SPP11N60CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4B11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO2B; Inverter; 280W Type of semiconductor module: IGBT Collector current: 50A Topology: NTC thermistor Power dissipation: 280W Technology: Field Stop; Trench Application: Inverter Case: AG-ECONO2B Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4B16BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; Inverter; 280W; Field Stop,Trench Type of semiconductor module: IGBT Power dissipation: 280W Technology: Field Stop; Trench Application: Inverter Topology: NTC thermistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO2B; Inverter; 280W Type of semiconductor module: IGBT Collector current: 50A Topology: NTC thermistor Power dissipation: 280W Technology: Field Stop; Trench Application: Inverter Case: AG-ECONO2B Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4GB15BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO3-3; Inverter; 280W Type of semiconductor module: IGBT Collector current: 50A Topology: NTC thermistor Power dissipation: 280W Technology: Field Stop; Trench Application: Inverter Case: AG-ECONO3-3 Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4GBOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO3-3; Inverter; 280W Type of semiconductor module: IGBT Collector current: 50A Topology: NTC thermistor Power dissipation: 280W Technology: Field Stop; Trench Application: Inverter Case: AG-ECONO3-3 Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4PB11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; EconoPIM™ 2 Type of semiconductor module: IGBT Technology: EconoPIM™ 2 Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FP50R12KT4PBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSC009NE2LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TLD1211SJFUMA1 | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IR2233PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: THT Supply voltage: 10...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 1.2kV Turn-on time: 750ns Power: 1.5W Kind of package: tube Case: DIP28-W Turn-off time: 700ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR2233SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Supply voltage: 10...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 1.2kV Turn-on time: 750ns Power: 1.6W Kind of package: tube Case: SO28-W Turn-off time: 700ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IR2233JTRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IR2233STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRGP4066DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 75A; 454W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 454W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGP4066D1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 90A Power dissipation: 227W Case: TO247AC Mounting: THT Kind of package: tube Gate charge: 225nC Technology: Trench Pulsed collector current: 225A Turn-on time: 115ns Turn-off time: 320ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BSP76E6433HUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP76E6433 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Type of integrated circuit: power switch Mounting: SMD Output current: 1.4A Kind of output: N-Channel Technology: HITFET® Output voltage: 42V Case: PG-SOT223-4 Kind of integrated circuit: low-side Number of channels: 1 |
auf Bestellung 2962 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCX5616H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCX5310H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCX5316H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCX5316H6433XTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRSM836-035MB | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| D6001N50TXPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Diode: hockey-puck rectifying Type of diode: hockey-puck rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPI21N50C3XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPP21N50C3XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CY8C24223A-24PVXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; SSOP20; 250BSRAM,4kBFLASH Interface: GPIO; I2C; SPI; UART Clock frequency: 24MHz Kind of core: 8-bit Memory: 250B SRAM; 4kB FLASH Case: SSOP20 Mounting: SMD Number of inputs/outputs: 16 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1650 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4146LQI-S422 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; QFN32; 8kBSRAM,64kBFLASH Type of integrated circuit: PSoC microcontroller Case: QFN32 Memory: 8kB SRAM; 64kB FLASH Mounting: SMD Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Number of inputs/outputs: 27 Supply voltage: 1.71...5.5V DC Integrated circuit features: CapSense Kind of core: 32-bit Clock frequency: 48MHz Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 490 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRL2910STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BCX42E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPW17N80C3FKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPA17N80C3XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPB17N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPP17N80C3XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPP60R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 139W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| BFR92PE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IGLT65R035D2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IGLT65R045D2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IGLT65R055D2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRF7807VTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BAT6404E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 40V; 0.25A; 5ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Max. forward voltage: 0.75V Max. forward impulse current: 0.8A Reverse recovery time: 5ns Application: automotive industry Leakage current: 2µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IPP60R125P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R125CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R180C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 441 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R120P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFB4410PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 951 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.51 EUR |
| 44+ | 1.98 EUR |
| 47+ | 1.83 EUR |
| 51+ | 1.69 EUR |
| 100+ | 1.57 EUR |
| 200+ | 1.46 EUR |
| 500+ | 1.31 EUR |
| IRFB4020PBFXKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHW40N135R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 0.5µs
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 0.5µs
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.82 EUR |
| 16+ | 5.47 EUR |
| 20+ | 4.39 EUR |
| 22+ | 3.89 EUR |
| 30+ | 3.61 EUR |
| 60+ | 3.59 EUR |
| ITS42008SBDAUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 8; N-Channel; SMD; PG-DSO-36
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 3.3W
Operating temperature: -40...125°C
Technology: Industrial PROFET
Turn-on time: 150µs
Turn-off time: 0.1ms
Kind of integrated circuit: high-side
Number of channels: 8
On-state resistance: 0.2Ω
Supply voltage: 11...45V DC
Output current: 0.7A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 8; N-Channel; SMD; PG-DSO-36
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 3.3W
Operating temperature: -40...125°C
Technology: Industrial PROFET
Turn-on time: 150µs
Turn-off time: 0.1ms
Kind of integrated circuit: high-side
Number of channels: 8
On-state resistance: 0.2Ω
Supply voltage: 11...45V DC
Output current: 0.7A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ITS4200SSJDXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Output current: 1.2A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...125°C
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Output current: 1.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS71202EPGXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7233EMXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLE7233GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2ED300C17SROHSBPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Supply voltage: 14...16V DC
Output current: 30A
Kind of output: IGBT driver
Type of semiconductor module: gate driver board
Operating temperature: -25...85°C
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™; SiC
Application: for medium and high power application
Voltage class: 1.7kV
Case: AG-EICE
Frequency: 60kHz
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Supply voltage: 14...16V DC
Output current: 30A
Kind of output: IGBT driver
Type of semiconductor module: gate driver board
Operating temperature: -25...85°C
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™; SiC
Application: for medium and high power application
Voltage class: 1.7kV
Case: AG-EICE
Frequency: 60kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2ED300C17STROHSBPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Supply voltage: 14...16V DC
Output current: 30A
Kind of output: IGBT driver
Type of semiconductor module: gate driver board
Operating temperature: -40...85°C
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™
Application: for medium and high power application
Voltage class: 1.7kV
Case: AG-EICE
Frequency: 60kHz
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Topology: IGBT half-bridge
Mounting: PCB
Supply voltage: 14...16V DC
Output current: 30A
Kind of output: IGBT driver
Type of semiconductor module: gate driver board
Operating temperature: -40...85°C
Integrated circuit features: galvanically isolated; integrated DC/DC converter
Technology: EiceDRIVER™
Application: for medium and high power application
Voltage class: 1.7kV
Case: AG-EICE
Frequency: 60kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCV61BE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCV61BE6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM24CL04B-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM24CL16B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1620 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM24CL16B-DGTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPP11N60CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4B11BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO2B; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO2B
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO2B; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO2B
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4B16BOSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Inverter; 280W; Field Stop,Trench
Type of semiconductor module: IGBT
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Inverter; 280W; Field Stop,Trench
Type of semiconductor module: IGBT
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Topology: NTC thermistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO2B; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO2B
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO2B; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO2B
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4GB15BOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO3-3; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO3-3; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4GBOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO3-3; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; Ic: 50A; AG-ECONO3-3; Inverter; 280W
Type of semiconductor module: IGBT
Collector current: 50A
Topology: NTC thermistor
Power dissipation: 280W
Technology: Field Stop; Trench
Application: Inverter
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4PB11BPSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; EconoPIM™ 2
Type of semiconductor module: IGBT
Technology: EconoPIM™ 2
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; EconoPIM™ 2
Type of semiconductor module: IGBT
Technology: EconoPIM™ 2
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FP50R12KT4PBPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC009NE2LS5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLD1211SJFUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2233PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: THT
Supply voltage: 10...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 1.2kV
Turn-on time: 750ns
Power: 1.5W
Kind of package: tube
Case: DIP28-W
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: THT
Supply voltage: 10...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 1.2kV
Turn-on time: 750ns
Power: 1.5W
Kind of package: tube
Case: DIP28-W
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2233SPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 1.2kV
Turn-on time: 750ns
Power: 1.6W
Kind of package: tube
Case: SO28-W
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 1.2kV
Turn-on time: 750ns
Power: 1.6W
Kind of package: tube
Case: SO28-W
Turn-off time: 700ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2233JTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| IR2233STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IRGP4066DPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 454W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 454W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AUIRGP4066D1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Mounting: THT
Kind of package: tube
Gate charge: 225nC
Technology: Trench
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 90A
Power dissipation: 227W
Case: TO247AC
Mounting: THT
Kind of package: tube
Gate charge: 225nC
Technology: Trench
Pulsed collector current: 225A
Turn-on time: 115ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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| BSP76E6433HUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| BSP76E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Mounting: SMD
Output current: 1.4A
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Case: PG-SOT223-4
Kind of integrated circuit: low-side
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Type of integrated circuit: power switch
Mounting: SMD
Output current: 1.4A
Kind of output: N-Channel
Technology: HITFET®
Output voltage: 42V
Case: PG-SOT223-4
Kind of integrated circuit: low-side
Number of channels: 1
auf Bestellung 2962 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.77 EUR |
| 66+ | 1.3 EUR |
| 73+ | 1.18 EUR |
| 76+ | 1.12 EUR |
| BCX5616H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BCX5310H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCX5316H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCX5316H6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRSM836-035MB |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
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| D6001N50TXPSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Category: Diode modules
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPI21N50C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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| SPP21N50C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C24223A-24PVXI |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP20; 250BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 250B SRAM; 4kB FLASH
Case: SSOP20
Mounting: SMD
Number of inputs/outputs: 16
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP20; 250BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 250B SRAM; 4kB FLASH
Case: SSOP20
Mounting: SMD
Number of inputs/outputs: 16
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1650 Stücke
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| CY8C4146LQI-S422 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN32; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: QFN32
Memory: 8kB SRAM; 64kB FLASH
Mounting: SMD
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Number of inputs/outputs: 27
Supply voltage: 1.71...5.5V DC
Integrated circuit features: CapSense
Kind of core: 32-bit
Clock frequency: 48MHz
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN32; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: QFN32
Memory: 8kB SRAM; 64kB FLASH
Mounting: SMD
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Number of inputs/outputs: 27
Supply voltage: 1.71...5.5V DC
Integrated circuit features: CapSense
Kind of core: 32-bit
Clock frequency: 48MHz
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 490 Stücke
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| IRL2910STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCX42E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| SPW17N80C3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPA17N80C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPB17N80C3ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPP17N80C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R199CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.37 EUR |
| BFR92PE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGLT65R035D2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGLT65R045D2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGLT65R055D2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7807VTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT6404E6433HTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.25A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Application: automotive industry
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.25A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Reverse recovery time: 5ns
Application: automotive industry
Leakage current: 2µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R125P6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.78 EUR |
| 25+ | 3.45 EUR |
| 28+ | 3.13 EUR |
| 50+ | 2.92 EUR |
| IPP60R125CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.35 EUR |
| IPP60R180C7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 441 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.44 EUR |
| 23+ | 3.72 EUR |
| IPP60R120P7 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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