Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129128) > Seite 2092 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| CY62146EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: VFBGA48 Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62146EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: TSOP44 II Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62147EV18LL-55BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Supply voltage: 1.65...2.25V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62147EV30LL-45B2XIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: VFBGA48 Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62147EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: VFBGA48 Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62147EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: TSOP44 II Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 256kx16bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IKQ50N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BGSA14GN10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz Type of integrated circuit: RF switch Output configuration: SP4T Number of channels: 4 Case: TSNP10 Supply voltage: 1.8...3.6V DC Mounting: SMD Bandwidth: 0.1...5GHz Application: telecommunication |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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S25FL256LAGNFV010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
auf Bestellung 1505 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S25FL127SABNFI101 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Part status: Not recommended for new designs |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS28E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double independent Features of semiconductor devices: ultrafast switching Case: SOT143 Max. forward voltage: 1.25V Power dissipation: 0.33W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPW55N80C3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 850V Drain current: 34.7A Pulsed drain current: 150A Power dissipation: 500W Case: PG-TO247 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BAT60BE6359HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPW60R099P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R099CPFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP60R099CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO220-3-1 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP60R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP60R099P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R099CPAFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: TO247-3 On-state resistance: 90mΩ Mounting: THT Kind of channel: enhancement Gate charge: 80nC Application: automotive industry |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R099C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB60R099P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 45nC Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 110W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 110W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP60R099P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPZA60R099P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Gate charge: 45nC Features of semiconductor devices: Kelvin terminal Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPA040N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 69A Power dissipation: 36W Case: TO220FP On-state resistance: 4mΩ Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ Gate-source voltage: ±20V Kind of package: tube |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R070CFD7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 156W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.129Ω Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPW60R070P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53.5A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSZ100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM25VN10-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 485 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM25V20A-DGQTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: DFN8 Interface: SPI |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM25V20A-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Mounting: SMD Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Clock frequency: 40MHz Memory: 2Mb FRAM Kind of interface: serial Memory organisation: 256kx8bit Case: DFN8 Interface: SPI |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPT010N08NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 425A Power dissipation: 375W Case: HSOF-8 On-state resistance: 1.05mΩ Mounting: SMD Gate charge: 178nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPW60R041C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 77.5A Power dissipation: 481W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPC90N04S5-3R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 63W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPC90N04S5L-3R3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB90N04S402ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 150W Case: D2PAK; TO263AB Mounting: SMD Gate charge: 118nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD90N04S304ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 4428 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 34V Drain current: 44A Power dissipation: 27W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 4580 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC030P03NS3GAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 4773 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC035N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TDSON-8 On-state resistance: 3.5mΩ Power dissipation: 156W |
auf Bestellung 3466 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC028N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1283 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC093N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 3081 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC0502NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: PG-TDSON-8 Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ISZ065N03L5SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Case: PG-TDSON-8 FL On-state resistance: 8.6mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 10nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ISZ019N03L5SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Case: PG-TDSON-8 On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 44nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ065N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 46W Case: PG-TDSON-8 On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 13nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ040N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 69W Case: PG-TDSON-8 On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 6.6nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ033NE2LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 18A Power dissipation: 30W Case: PG-TDSON-8 On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 18.3nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ070N08LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8 Mounting: SMD Drain current: 40A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Case: PG-TDSON-8 On-state resistance: 7.4mΩ Power dissipation: 69W Gate charge: 14.1nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ISC230N10NM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 48W Case: PG-TDSON-8 On-state resistance: 23mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 7.4nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC065N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 On-state resistance: 5.3mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 13nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ISC011N06LM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 288A Power dissipation: 188W Case: PG-TDSON-8 On-state resistance: 1.15mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 63nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ISC0805NLSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 71A Power dissipation: 74W Case: PG-TDSON-8 On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC034N10LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 46nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPG20N06S4L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 33W Case: PG-TDSON-8 On-state resistance: 26mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 20nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC050N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 136W Case: PG-TDSON-8 On-state resistance: 5mΩ Mounting: SMD Gate charge: 61nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ISC011N03L5SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ISC017N04NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 193A Power dissipation: 115W Case: PG-TDSON-8 FL On-state resistance: 1.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 51nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY62146EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62146EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62147EV18LL-55BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62147EV30LL-45B2XIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62147EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62147EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKQ50N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BGSA14GN10E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Mounting: SMD
Bandwidth: 0.1...5GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Mounting: SMD
Bandwidth: 0.1...5GHz
Application: telecommunication
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL256LAGNFV010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
auf Bestellung 1505 Stücke:
Lieferzeit 14-21 Tag (e)
| S25FL127SABNFI101 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Part status: Not recommended for new designs
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS28E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPW55N80C3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT60BE6359HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R099P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
| IPW60R099CPFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP60R099CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP60R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP60R099P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| IPW60R099CPAFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 80nC
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 80nC
Application: automotive industry
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| IPW60R099C6FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB60R099P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R099C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R099C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R099P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPZA60R099P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA040N06NXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
| IPW60R070CFD7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R070P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ100N06LS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25VN10-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 485 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-DGQTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-DGTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Clock frequency: 40MHz
Memory: 2Mb FRAM
Kind of interface: serial
Memory organisation: 256kx8bit
Case: DFN8
Interface: SPI
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPT010N08NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPW60R041C6FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| IPC90N04S5-3R6 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32.6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPC90N04S5L-3R3 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB90N04S402ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: D2PAK; TO263AB
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: D2PAK; TO263AB
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD90N04S304ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC0902NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4428 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC0909NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4580 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC030P03NS3GAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4773 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC035N10NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Power dissipation: 156W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Power dissipation: 156W
auf Bestellung 3466 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC028N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1283 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC093N04LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3081 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC0502NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISZ065N03L5SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8 FL
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8 FL
On-state resistance: 8.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISZ019N03L5SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 44nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ065N06LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ040N06LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 6.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 6.6nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ033NE2LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18.3nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ070N08LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Mounting: SMD
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Power dissipation: 69W
Gate charge: 14.1nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Mounting: SMD
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Power dissipation: 69W
Gate charge: 14.1nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC230N10NM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 7.4nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC065N06LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC011N06LM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC0805NLSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC034N10LS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 46nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 46nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPG20N06S4L26ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC050N10NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC011N03L5SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISC017N04NM5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH